CN103135356B - Reflection-type photoetching projection objective - Google Patents
Reflection-type photoetching projection objective Download PDFInfo
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- CN103135356B CN103135356B CN201110374750.1A CN201110374750A CN103135356B CN 103135356 B CN103135356 B CN 103135356B CN 201110374750 A CN201110374750 A CN 201110374750A CN 103135356 B CN103135356 B CN 103135356B
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- spherical reflector
- projection objective
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Abstract
The invention provides a reflection-type photoetching projection objective, which orderly comprises, in a light propagation direction: a first planar reflector, a first spherical reflector with a positive focal power, a second spherical reflector with a negative focal power, a third spherical reflector with a positive focal power, and a second planar reflector; the light propagation direction orderly passes through the first planar reflector, the first spherical reflector with a positive focal power, the second spherical reflector with a negative focal power, the third spherical reflector with a positive focal power, and the second planar reflector. The reflection-type photoetching projection objective of the invention has the following advantages: the exposure field of view is large, which is 500 mm in a non-scanning direction; multi-wavelength exposure is adopted, which increases the exposure illumination, and improves the yield of the photoetching machine; a 3-face reflector pure reflection structure is adopted, which provides the objective with extremely high transmittance, obtains excellent image quality with the proviso that the focal power of each reflector is reasonably distributed, and ensures important premises such as objective manufacture, cost, weight, and the like.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly, relate to a kind of reflective type photomask projection objective being applied to optical semiconductor engraving device.
Background technology
Jap.P. JP4182304 discloses a kind of photoetching projection objective lens of visual field of exposing completely, and as shown in Figure 1, adopts the version of classical ofner catoptron correction up aberration eyeglass.For traditional offner structure, its shortcoming is obviously easily shown in, the curvature of field and astigmatism are all difficult to correct, if add heavy caliber lenses which correct aberration can obtain good effect, but all can go wrong in manufacture feasibility and cost.Employ the glass mirror of four diameters more than 600mm in this embodiment.According to the data that this patent provides, this lithographic objective also exists following shortcoming:
1. exposure field is smaller, and non-scan direction is about 444mm;
2., in order to ensure aberration, use monochromatic light exposure, exposure efficiency is on the low side;
3. in order to improve aberration, employing 2 to 4 pieces of bigbore glass material eyeglasses, object lens manufacture difficulty is strengthened, cost increases, and weight is heavier.
Summary of the invention
In order to overcome defect of the prior art, the present invention proposes a kind of reflective type photomask projection objective, comprise successively along light transmition direction: the first plane mirror, there is the first spherical reflector of positive light coke, there is the second spherical reflector of negative power, there is the 3rd spherical reflector of positive light coke, the second plane mirror; Light transmition direction, successively through the first plane mirror, has the first spherical reflector of positive light coke, has the second spherical reflector of negative power, there is the 3rd spherical reflector of positive light coke, second spherical reflector, the 3rd spherical reflector, the second plane mirror.
More preferably, also comprise a diaphragm, be arranged on described 3rd spherical reflector.
Wherein, the relative optical axis of described first, second, and third spherical reflector is arranged axisymmetricly.
Wherein, described optical axis is the optical axis of the first spherical reflector.
More preferably, focal power Ф 1, the Ф 2 of described first, second, and third spherical reflector, Ф 3 meet following condition:
2*Ф1+2*Ф2+2*Ф3<1*e-6
-0.8<Ф1/Ф2<-0.4
-1.7<Ф2/Ф3<-1.2。
Wherein, projection objective has the non-scan direction visual field of 500mm, g(435.83nm) h(404.65nm) i(365.01nm) the broadband exposure wavelength of three wavelength.The true field of described photoetching projection objective lens is circular arc.
Reflective type photomask projection objective of the present invention has the following advantages:
1. to expose completely visual field, non-scan direction 500mm;
2. use multi-wavelength exposure, add exposure illumination, improve the productive rate of litho machine;
3. adopt 3 pure reflective structures of catoptron, make object lens have high transmitance, under the prerequisite of each catoptron focal power of reasonable distribution, obtain excellent picture element, ensure that the important prerequisites such as the manufacture of object lens, cost, weight simultaneously.
Accompanying drawing explanation
Can be further understood by following detailed Description Of The Invention and institute's accompanying drawings about the advantages and spirit of the present invention.
Fig. 1 is prior art projection objective optical structure chart;
Fig. 2 is projection objective lens optical system structural drawing of the present invention;
Fig. 3 is shape and the size of projection objective exposure field of the present invention;
Fig. 4 is the wave aberration value of projection objective exposure field each point of the present invention.
Embodiment
Specific embodiments of the invention are described in detail below in conjunction with accompanying drawing.
As shown in Figure 2, after mask plane 1 accepts illumination, the light through mask incides spherical reflector 3 to projection objective lens optical system structure of the present invention after plane mirror 2 reflects, and plane mirror 2 makes the chief ray of each object point with 90 degree of reflections.Recessed spherical reflector 3 has positive light coke, makes light thereon to reflect away by partial convergence.The light reflected from spherical reflector 3 enters into spherical reflector 4, and spherical reflector 4 has negative power, makes the light reflected can incide spherical reflector 5 with the form of dispersing.The light of each object point, after above-mentioned optical component, spherical reflector 5 forms pupil plane.Spherical reflector 5 has positive light coke, is reflected away by the incident ray dispersed with convergence form.From the reflected light that spherical reflector 5 reflects, again enter into spherical reflector 4.The divergent rays that the spherical reflector 4 with negative power reflects, after spherical reflector 3 reflects, incide on plane mirror 6 with the form assembled, plane mirror 6 makes the chief ray of each object point be reflected in image planes 7 with 90 degree and forms picture point.
In fact, objective lens arrangement provided by the invention is coaxial catoptric lens structure, and removing plane mirror 2 and plane mirror 6, spherical reflector 3, spherical reflector 4, spherical reflector 5 are all about optical axis 8 Rotational Symmetry.If along mask plane light transmition direction trace to image planes, this objective lens arrangement form has about the symmetrical feature of pupil plane (spherical reflector 5), and this is just for object lens provide without advantages such as the little distortion of coma.
The photoetching projection objective lens of this thrihedral reflector structure that the present invention proposes, its key point solving existing issue is, introduce a slice catoptron more, make light reflection number of times more twice than traditional offner structure, make the focal power of optical system distribute in essence and there is multiple possibility, the each catoptron focal power of reasonable distribution, makes each catoptron focal power weaken, and is easy to correct the curvature of field and astigmatism.
The focal power of spherical reflector 3 is Ф 1, and the focal power of spherical reflector 4 is Ф 2, and the focal power of spherical reflector 3 is Ф 5, should meet following condition between them, could obtain reasonable picture element:
2*Ф1+2*Ф2+2*Ф3<1*e-6
-0.8<Ф1/Ф2<-0.4
-1.7<Ф2/Ф3<-1.2
The distance L1 of mask plane 1 apart from catoptron 2 and the distance L2 sum of catoptron distance spherical reflector 3, i.e. object distance L, the picture element of the more large more favourable object lens of its numerical value, but spherical reflector 3 bore can be made to increase simultaneously.
Object lens of the present invention adopt broadband exposure, by g(435.83nm) h(404.65nm) i(365.01nm) broadband of line combination all can quote the pattern of good picture element.Object-side numerical aperture NA is 0.08.
Object lens true field of the present invention is circular arc, and as shown in Figure 3, non-scan direction field of view length 500mm, sagittal heights 134mm, the wide 4mm of arc, imaging enlargement ratio is positive 1 times.
The structured data of the present embodiment is as following table:
| surface | radius | thickness | glass | semi-aperture |
| object | infinity | 884.31387 | ||
| 1 | infinity | 800 | mirror | 546.2946 |
| 2 | -1696.77 | -555.508 | mirror | 432.6765 |
| 3 | -1126.94 | 574.47152 | mirror | 192.5238 |
| STO | -1676.11 | -574.4715 | mirror | 138.4456 |
| 5 | -1126.94 | 555.50805 | mirror | 192.5675 |
| 6 | -1696.77 | -800 | mirror | 432.737 |
| 7 | infinity | -884.3139 | mirror | 373.0039 |
| image | infinity |
Wave aberration RMS value of the present invention as shown in Figure 4, is 0.0477 λ to the maximum, and λ gets h line wavelength (404.65nm).
Just preferred embodiment of the present invention described in this instructions, above embodiment is only in order to illustrate technical scheme of the present invention but not limitation of the present invention.All those skilled in the art, all should be within the scope of the present invention under this invention's idea by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (7)
1. a reflective type photomask projection objective, it is characterized in that comprising successively along light transmition direction: the first plane mirror, there is the first spherical reflector of positive light coke, there is the second spherical reflector of negative power, there is the 3rd spherical reflector of positive light coke, the second plane mirror; Light transmition direction, successively through the first plane mirror, has the first spherical reflector of positive light coke, has the second spherical reflector of negative power, there is the 3rd spherical reflector of positive light coke, second spherical reflector, the first spherical reflector, the second plane mirror.
2. reflective type photomask projection objective as claimed in claim 1, characterized by further comprising a diaphragm, is arranged on described 3rd spherical reflector.
3. reflective type photomask projection objective as claimed in claim 1, is characterized in that the relative optical axis of described first, second, and third spherical reflector is arranged axisymmetricly.
4. reflective type photomask projection objective as claimed in claim 3, is characterized in that described optical axis is the optical axis of the first spherical reflector.
5. reflective type photomask projection objective as claimed in claim 1, is characterized in that the focal power Ф 1 of described first, second, and third spherical reflector, Ф 2, Ф 3 meet following condition:
2*Ф1+2*Ф2+2*Ф3<1*e
-6
-0.8<Ф1/Ф2<-0.4
-1.7<Ф2/Ф3<-1.2。
6. reflective type photomask projection objective as claimed in claim 1, it is characterized in that, projection objective has the non-scan direction visual field of 500mm, the broadband exposure wavelength of g line, h line, i line three wavelength, and wherein g line refers to that 435.83nm, h line refers to that 404.65nm, i line refers to 365.01nm.
7. reflective type photomask projection objective as claimed in claim 1, is characterized in that the true field of described photoetching projection objective lens is circular arc.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110374750.1A CN103135356B (en) | 2011-11-23 | 2011-11-23 | Reflection-type photoetching projection objective |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110374750.1A CN103135356B (en) | 2011-11-23 | 2011-11-23 | Reflection-type photoetching projection objective |
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| Publication Number | Publication Date |
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| CN103135356A CN103135356A (en) | 2013-06-05 |
| CN103135356B true CN103135356B (en) | 2015-04-15 |
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| CN201110374750.1A Active CN103135356B (en) | 2011-11-23 | 2011-11-23 | Reflection-type photoetching projection objective |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6635904B2 (en) * | 2016-10-14 | 2020-01-29 | キヤノン株式会社 | Projection optical system, exposure apparatus and article manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5170284A (en) * | 1991-08-16 | 1992-12-08 | Hughes Aircraft Company | Wide field of view focal three-mirror anastigmat |
| CN1851526A (en) * | 2006-06-02 | 2006-10-25 | 上海微电子装备有限公司 | Projection objective lens optical system |
| CN101523294A (en) * | 2006-08-14 | 2009-09-02 | 卡尔蔡司Smt股份公司 | Catadioptric projection objective with pupil mirror. projection exposure apparatus and method |
| CN101794016A (en) * | 2010-01-27 | 2010-08-04 | 中国科学院上海技术物理研究所 | Multi-aperture multi-view-field long-focus one-barrier total reflection optical system |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4182304B2 (en) * | 1998-05-18 | 2008-11-19 | 株式会社ニコン | Scanning projection exposure apparatus and projection optical system suitable for the exposure apparatus |
| US7130020B2 (en) * | 2003-04-30 | 2006-10-31 | Whitney Theodore R | Roll printer with decomposed raster scan and X-Y distortion correction |
| JP2008170519A (en) * | 2007-01-09 | 2008-07-24 | Olympus Corp | Catoptric system |
-
2011
- 2011-11-23 CN CN201110374750.1A patent/CN103135356B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5170284A (en) * | 1991-08-16 | 1992-12-08 | Hughes Aircraft Company | Wide field of view focal three-mirror anastigmat |
| CN1851526A (en) * | 2006-06-02 | 2006-10-25 | 上海微电子装备有限公司 | Projection objective lens optical system |
| CN101523294A (en) * | 2006-08-14 | 2009-09-02 | 卡尔蔡司Smt股份公司 | Catadioptric projection objective with pupil mirror. projection exposure apparatus and method |
| CN101794016A (en) * | 2010-01-27 | 2010-08-04 | 中国科学院上海技术物理研究所 | Multi-aperture multi-view-field long-focus one-barrier total reflection optical system |
Non-Patent Citations (1)
| Title |
|---|
| 空间相机共轴三反红外光学系统设计;袁涛 等;《光电技术应用》;20110430;第26卷(第2期);第21-26页 * |
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Address after: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Patentee after: Shanghai microelectronics equipment (Group) Limited by Share Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Zhang Road No. 1525 Patentee before: Shanghai Micro Electronics Equipment Co., Ltd. |
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