CN103123937A - Solar cell with passivation structure on back and manufacture method thereof - Google Patents
Solar cell with passivation structure on back and manufacture method thereof Download PDFInfo
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- CN103123937A CN103123937A CN2011103672469A CN201110367246A CN103123937A CN 103123937 A CN103123937 A CN 103123937A CN 2011103672469 A CN2011103672469 A CN 2011103672469A CN 201110367246 A CN201110367246 A CN 201110367246A CN 103123937 A CN103123937 A CN 103123937A
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- solar cell
- passivation layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a solar cell with a passivation structure on the back and a manufacture method thereof. The solar cell with the passivation structure on the back comprises a substrate, a passivation layer, a first metal electrode and a second metal electrode. The passivation layer is formed on a backlight side of the substrate, and the first metal electrode and the second metal electrode are formed on a first area and a second area of the passivation layer respectively. A procedure of process of etching the passivation layer is reduced for the solar cell, and photoelectric conversion efficiency can be improved.
Description
Technical field
The present invention relates to a kind of solar cell and manufacture method thereof, particularly a kind of solar cell and manufacture method thereof with passivating back structure.
Background technology
Peter out because the enhancing of environmental consciousness adds other fossil energy, the new forms of energy of exploitation safety just become the most urgent work at present.The new forms of energy that can be used for exploitation need to possess two important documents simultaneously: new forms of energy are contained abundant, are difficult for exhausted; And new forms of energy are safety, clean, can not threaten the mankind and welding.Yet, just in time meet aforementioned important document such as the reproducibility energy of solar energy, wind-force, waterpower etc.In addition, Taiwan lacks energy resources, and the energy more than 90 percent must be dependent on external import, yet, the Taiwan located in subtropical zone, sunny, sunshine amount is large, be fit to very much research and development solar energy, and utilize solar power generation more to have concurrently energy-conservation and advantage environmental protection.
The most direct mode that converts solar energy to the energy is used solar cell (solar cells) exactly, is called again photovoltaic module (photovoltaic devices).Its structure of solar cell in being widely used now utilizes P type and N type semiconductor to be combined into basically, and produces electron stream when battery absorbs luminous energy.Common common battery design two sides before and after it form respectively electrode.Then, these solar cells are electrically connected to each other to increase voltage with series system again.
For example, U.S. Patent application (2011/0120552A1) discloses a kind of solar cell, sees also Figure 1A to Fig. 1 C, and Figure 1A to Fig. 1 C is the making flow chart that illustrates according to a kind of solar cell of prior art.Existing solar cell is mainly to form passivation layer 210 on the shady face of substrate 200, then the mode by laser ablation, plasma etching or etching paste etches groove 220 on passivation layer 210, make the elargol 230 of follow-up coating can touch the shady face of substrate 200, the electric current that thus substrate 200 is produced is derived.Then, form aluminium glue 240 on passivation layer 210, and form solar cell by the mode of sintering.
Yet, in aforesaid U.S. Patent application (2011/0120552A1), when elargol 230 contacts with the shady face of substrate 200, because of under the temperature limiting of solar cell sintering process, silver can't form good alloy structure between the two with the silicon of substrate, makes interface character herein can cause the recombination-rate surface (SRV:Surface Recombination velocity) of solar cell to rise.In other words, because the association rate in the electronics that produces in the opto-electronic conversion effect and hole rises, and then cause the decline of photoelectric conversion efficiency.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of solar cell and manufacture method thereof with passivating back structure, with the decline problem of the photoelectric conversion efficiency that solves solar cell.
Therefore, for achieving the above object, according to the solar cell with passivating back structure of the present invention, comprise substrate, passivation layer, the first metal electrode and the second metal electrode.Wherein, substrate has shady face, and the material of substrate can be monocrystalline silicon or polysilicon.And the sensitive surface of substrate can be provided with p-n junction and anti-reflecting layer.
In addition, passivation layer is formed on the shady face of substrate, and passivation layer has first area and second area.The material of passivation layer can comprise silica, silicon nitride, aluminium oxide or alundum (Al2O3).Wherein, can for example utilize chemical vapour deposition (CVD) (CVD) technique, wet oxidation (Wet Oxide) technique, dry type oxidation (Dry Oxide) technique or plasma enhanced chemical vapor deposition (PECVD) technique to form passivation layer on the shady face of substrate.
Continuous speech, the surface of passivation layer has at least one through hole, and the surface of through hole self-passivation layer connects the shady face to substrate.The purpose of making through hole is to make the second follow-up metal electrode to touch substrate by through hole, therefore just can form the path that electric current is derived.Wherein, through hole can be made by dry etch process or wet etch process.
In addition, in the solar cell with passivating back structure of the present invention, the first metal electrode is formed on the first area of passivation layer.The first metal electrode for example is made of elargol.Here to should be mentioned that especially, selected elargol need to belong to can not or seldom with the kind of passivation layer reaction.Particularly, selected elargol comprises silver-colored particle, organic vehicle and antimony oxide.
In addition, aforesaid the second metal electrode is formed on the second area of passivation layer, and the second metal electrode filling is in through hole.Wherein, the second metal electrode can for example be made by aluminium glue.
In other words, the characteristics of the solar cell of tool passivating back structure of the present invention are, etch on passivation layer the technique of groove together except having lacked, tool of the present invention by the photoelectric conversion efficiency of the solar cell of passivating back structure higher than United States Patent (USP) before the disclosed solar cell of case (2011/0120552A1).
In addition, the present invention also proposes a kind of manufacture method with solar cell of passivating back structure.At first, provide the substrate with shady face.Wherein, the material of substrate can be monocrystalline silicon or polysilicon.And the sensitive surface of substrate can be provided with p-n junction and anti-reflecting layer.
Then, form passivation layer on shady face, and passivation layer have first area and second area.The material of passivation layer can be for example silica or silicon nitride.Wherein, can for example utilize chemical vapour deposition (CVD) (CVD) technique, wet oxidation (Wet Oxide) technique, dry type oxidation (Dry Oxide) technique or plasma enhanced chemical vapor deposition (PECVD) technique to form passivation layer on the shady face of substrate.
Continuous speech, the surface of passivation layer has at least one through hole, and the surface of through hole self-passivation layer connects the shady face to substrate.The purpose of making through hole is to make the second follow-up metal electrode to touch substrate by through hole, therefore just can form the path that electric current is derived.Wherein, through hole can be made by dry etch process or wet etch process.
Form passivation layer on shady face after, then form again the first metal electrode on the first area of passivation layer.Wherein, the first metal electrode for example is made of elargol.Here to should be mentioned that especially, selected elargol need to belong to can not or seldom with the kind of passivation layer reaction.Particularly, selected elargol comprises silver-colored particle, organic vehicle and antimony oxide.
Then, form the second metal electrode on the second area of passivation layer, and the second metal electrode filling is in through hole.Wherein, the second metal electrode can for example be made of aluminium glue.
In sum, according to solar cell and the manufacture method thereof with passivating back structure of the present invention, can have a following advantage:
1. the solar cell with passivating back structure of the present invention, reduce by one etch process compared with United States Patent (USP) (2011/0120552A1).
2. the solar cell with passivating back structure of the present invention has photoelectric conversion efficiency preferably.
Description of drawings
Figure 1A to Fig. 1 C is the making flow chart that illustrates according to a kind of solar cell of prior art.
Fig. 2 A to Fig. 2 D illustrates according to a kind of making flow chart with solar cell of passivating back structure of the present invention.
Fig. 3 A to Fig. 3 D is the longitudinal sectional drawing that illustrates according to the making flow process of a kind of solar cell with passivating back structure of the present invention.
Figure 4A to Fig. 4 D is the transverse cross-sectional view that illustrates according to the making flow process of a kind of solar cell with passivating back structure of the present invention.
Fig. 5 A to Fig. 5 E illustrates the data comparison diagram that is respectively Voc, Isc, Eff, Rs and FF according to the experimental group of first group and control group.
Fig. 6 A to Fig. 6 E illustrates the data comparison diagram that is respectively Voc, Isc, Eff, Rs and FF according to the experimental group of second group and control group.
Fig. 7 is the block diagram that illustrates according to the manufacture method of the solar cell of a kind of tool passivating back structure of the present invention.
[primary clustering symbol description]
200: substrate
210: passivation layer
220: groove
230: elargol
240: aluminium glue
300: substrate
301: shady face
302: sensitive surface
310: passivation layer
311: the first area
312: second area
313: through hole
330: the first metal electrodes
340: the second metal electrodes
400,410,420,430: step
Embodiment
Hereinafter with reference to relevant drawings, the solar cell and the manufacture method thereof that have the passivating back structure according to of the present invention are described, for the ease of understanding, represent same components in following embodiment with identical drawing reference numeral.
At first, Fig. 2 A to Fig. 2 D illustrates according to a kind of making flow chart with solar cell of passivating back structure of the present invention.Fig. 3 A to Fig. 3 D is the longitudinal sectional drawing that illustrates according to the making flow process of a kind of solar cell with passivating back structure of the present invention.Figure 4A to Fig. 4 D is the transverse cross-sectional view that illustrates according to the making flow process of a kind of solar cell with passivating back structure of the present invention.Fig. 7 is the block diagram that illustrates according to the manufacture method of a kind of solar cell with passivating back structure of the present invention.As Fig. 2 A to Fig. 4 D and shown in Figure 7, the solar cell with passivating back structure of the present invention comprises substrate 300, passivation layer 310, the first metal electrode 330 and the second metal electrode 340.In the making flow process of a kind of solar cell with passivating back structure of the present invention, at first provide substrate (step 400).Generally speaking, substrate 300 usually can according to whether irradiation be divided into two kinds of surfaces, and wherein, a kind of surface is called as sensitive surface 302, and another kind of surface is called as shady face 301.Wherein, sensitive surface 302 represents the surface that substrate 300 can be exposed to sunlight, the surface that shady face 301 representatives can directly not exposed to sunlight.Basic, sensitive surface 302 can be provided with p-n junction (not shown), the coarse structure (not shown) that increases light incident and anti-reflecting layer (not shown) etc.Wherein, p-n junction represents the zone that the opto-electronic conversion effect produces.In brief, when the energy of the photon of sunlight is enough to make the external electrical of the p-n junction in substrate to break away from, will generation current.And the effect of anti-reflecting layer is, when avoiding the sensitive surface when the solar light irradiation solar cell, too much reflection is arranged, and makes photoelectric conversion efficiency descend.
Continuous speech, as step 410, form passivation layer 310 on the shady face 301 of substrate 300, and according on passivation layer 310 the material that forms difference, and divide into first area 311 and second area 312.The material of passivation layer 310 can be such as being the materials such as silica, silicon nitride, aluminium oxide or alundum (Al2O3).In addition, different generation types can be arranged according to the needs of technique.For instance, passivation layer 310 can for example utilize chemical vapour deposition (CVD) (CVD) technique, wet oxidation (Wet Oxide) technique, dry type oxidation (Dry Oxide) technique or plasma enhanced chemical vapor deposition (PECVD) technique and be formed on the shady face 301 of substrate 300.
In addition, the surface of passivation layer 310 has at least one through hole 313, and here, described through hole 313 is through to the shady face 301 of substrate 300 from the surface of passivation layer 310.In detail, this is due to current generated in substrate 300 or need to export to and outside just can further use.In other words, through hole 313 is used for making the second outside metal electrode 340 can be connected to the shady face 301 of substrate 300, thus electric current is exported to the outside.Wherein, through hole 313 can for example be made by the mode of dry etch process, wet etch process or laser ablation, plasma etching or etching paste.
In addition, as step 420, form the first metal electrode 330 on the first area 311 of passivation layer 310.The first metal electrode 330 for example is made of elargol, and is also silver-colored for the back of the body that is commonly called as, and the first metal electrode 330 can be formed on passivation layer 310 by for example mode with coating technique, silk screen printing or yellow light lithography.What pay special attention to is, elargol as used herein can not react with passivation layer 310, or can be only seldom or seldom or hardly can aitiogenic kind.Specifically, selected elargol can comprise silver-colored particle, organic vehicle and antimony oxide.If the reaction that elargol itself can be very large with 310 of passivation layers may be penetrated into this shady face 301 and destroys the passivation effect of this passivation layer 310 itself, thereby causes the reduction of photoelectric conversion efficiency, therefore to avoid as far as possible this reaction.
Then, as step 430, form the second metal electrode 340 (being commonly called as back of the body aluminium) on the second area 312 of passivation layer 310.Wherein, the second metal electrode 340 can be filled in the through hole 313 of passivation layer 310.Must be filled in due to the second metal electrode 340 in the through hole 313 of passivation layer 310, to set forth in the principle that reaches the shady face 301 that is electrically connected to substrate 300 and reason paragraph in front, so repeat no more.In addition, the second metal electrode 340 can for example be made of aluminium glue, therefore is commonly called as again back of the body aluminium.The second metal electrode 340 can be formed on passivation layer 310 by for example mode with coating technique, silk screen printing or yellow light lithography.
In addition, the below will be in detail with reference to experimental data.According to the experimental data that the applicant provides, the solar cell that provable photoelectric conversion efficiency with solar cell of passivating back structure of the present invention compares to prior art is high.In addition, of the present invention have advantages of that the solar cell of passivating back structure also reduces the technique of one etch passivation layer than prior art.
At first explanation is, the applicant compares with the solar cell (experimental group) of tool passivating back structure of the present invention and the solar cell (control group) of prior art.Wherein, both differences are, in the solar cell with passivating back structure of the present invention, the first metal electrode is namely carried on the back the shady face (as shown in Fig. 4 D) that silver can not touch substrate, the solar cell of prior art is by etching groove in the back of the body silver-colored position on passivation layer, and makes the shady face (as shown in 1C figure) that the first metal electrode can contact substrate.Each measured data are as shown in table one and Fig. 5 A to Fig. 6 E, and wherein, Fig. 5 A to Fig. 5 E illustrates the data comparison diagram that is respectively Voc, Isc, Eff, Rs and FF according to the experimental group of first group and control group.Fig. 6 A to Fig. 6 E illustrates the data comparison diagram that is respectively Voc, Isc, Eff, Rs and FF according to the experimental group of second group and control group.
Table one is of the present invention has the solar cell (experimental group) of passivating back structure and the data comparison sheet of the solar cell (control group) of prior art.
Wherein, Voc represents that open circuit voltage, FF represent that fill factor, curve factor, Isc represent that short circuit current and EFF represent photoelectric conversion efficiency.
Furthermore, the applicant proves with two groups of experimental datas, the effect with solar cell of passivating back structure of the present invention.Wherein, each group each of the present inventionly have the solar cell of passivating back structure and its mean value calculation is measured respectively and got to the solar cell of 10 prior aries with 10.According to data result, no matter be first group or second group experimental result as can be known, the photoelectric conversion efficiency of the solar cell with passivating back structure of the present invention is all higher than the solar cell of prior art.Wherein, what pay particular attention to is because the relation that decimal point rounds up, so the open circuit voltage of second group relatively in, the data of being read by table one are 0.619.In fact, by Fig. 5 A to Fig. 6 E as can be known, in the solar cell with passivating back structure of the present invention, all the solar cell than prior art is high with Isc for Voc.
Continuous speech, generally when measuring photoelectric conversion efficiency, can with reference to three numerical value, be respectively: fill factor, curve factor (FF), open circuit voltage (Voc), short circuit current (Isc), wherein, this three numerical value and photoelectric conversion efficiency positive correlation.Further, the product of fill factor, curve factor, open circuit voltage and short-circuit current density is photoelectric conversion efficiency.Therefore, the photoelectric conversion efficiency of the solar cell with passivating back structure of the present invention nature is higher than the solar cell of prior art.
Generally speaking, the advantage with solar cell of passivating back structure of the present invention is, etches on passivation layer 310 technique of groove except having lacked together, also has the photoelectric conversion efficiency higher than existing solar cell.
Although described the present invention in conjunction with being considered at present practical exemplary embodiment, but should be clear, the present invention is not limited to disclosed embodiment, but in contrast, the invention is intended to cover interior various modifications and the equivalent arrangements of spirit and scope of appended claims.
Claims (10)
1. solar cell with passivating back structure, described solar cell with passivating back structure comprises:
Substrate, described have a shady face;
Passivation layer, described passivation layer is formed on described shady face, and described passivation layer has first area and second area, wherein, the second area surface of described passivation layer has at least one through hole, and described through hole connects the described shady face to described substrate from the surface of described passivation layer;
The first metal electrode, described the first metal electrode are formed on the described first area of described passivation layer; And
The second metal electrode, described the second metal electrode is formed on the described second area of described passivation layer, and described the second metal electrode filling is connected in described through hole and with the described shady face of described substrate.
2. the solar cell with passivating back structure as claimed in claim 1, wherein, the material of described the first metal electrode comprises elargol.
3. the solar cell with passivating back structure as claimed in claim 2, wherein, described elargol comprises a plurality of silver-colored particles, organic vehicle and antimony oxide.
4. the solar cell with passivating back structure as claimed in claim 1, wherein, the material of described the second metal electrode comprises aluminium glue.
5. the solar cell with passivating back structure as claimed in claim 1, wherein, the material of described passivation layer comprises silica, silicon nitride, aluminium oxide or alundum (Al2O3).
6. manufacture method with solar cell of passivating back structure, described method comprises:
Substrate is provided, and described substrate has shady face;
Form passivation layer on described shady face, and described passivation layer has first area and second area, wherein, the described second area surface of described passivation layer has at least one through hole, and described through hole connects the described shady face to described substrate from the surface of described passivation layer;
Form the first metal electrode on the described first area of described passivation layer; And
Form the second metal electrode on the described second area of passivation layer, and described the second metal electrode filling is connected in described through hole and with the described shady face of described substrate.
7. the manufacture method with solar cell of passivating back structure as claimed in claim 6, wherein, the material of described the first metal electrode comprises elargol.
8. the manufacture method with solar cell of passivating back structure as claimed in claim 7, wherein, described elargol comprises silver-colored particle, organic vehicle and antimony oxide.
9. the manufacture method with solar cell of passivating back structure as claimed in claim 6, wherein, the material of described the second metal electrode comprises aluminium glue.
10. the manufacture method with solar cell of passivating back structure as claimed in claim 6, wherein, the material of described passivation layer comprises silica, silicon nitride, aluminium oxide or alundum (Al2O3).
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| CN201110367246.9A CN103123937B (en) | 2011-11-18 | 2011-11-18 | There is solar cell and the manufacture method thereof of passivation structure on back |
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| CN201110367246.9A CN103123937B (en) | 2011-11-18 | 2011-11-18 | There is solar cell and the manufacture method thereof of passivation structure on back |
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| CN103123937B CN103123937B (en) | 2015-09-16 |
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Cited By (2)
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| CN104518051A (en) * | 2013-10-08 | 2015-04-15 | 台湾茂矽电子股份有限公司 | Solar cell production method |
| CN111066155A (en) * | 2017-08-29 | 2020-04-24 | 京瓷株式会社 | Solar cell element and solar cell module |
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| US20110048531A1 (en) * | 2009-08-27 | 2011-03-03 | Lg Electronics Inc. | Solar cell and fabricating method thereof |
| TW201135754A (en) * | 2010-01-25 | 2011-10-16 | Hitachi Chemical Co Ltd | Paste composition for electrode and photovoltaic cell |
| TW201135959A (en) * | 2009-12-18 | 2011-10-16 | Toray Industries | Semiconductor device manufacturing method and back junction type solar cell |
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| US20110048531A1 (en) * | 2009-08-27 | 2011-03-03 | Lg Electronics Inc. | Solar cell and fabricating method thereof |
| CN101728459A (en) * | 2009-11-18 | 2010-06-09 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of crystal silicon solar cell |
| TW201135959A (en) * | 2009-12-18 | 2011-10-16 | Toray Industries | Semiconductor device manufacturing method and back junction type solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104518051A (en) * | 2013-10-08 | 2015-04-15 | 台湾茂矽电子股份有限公司 | Solar cell production method |
| CN111066155A (en) * | 2017-08-29 | 2020-04-24 | 京瓷株式会社 | Solar cell element and solar cell module |
| CN111066155B (en) * | 2017-08-29 | 2023-06-23 | 京瓷株式会社 | Solar cell element and solar cell module |
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