CN103116057B - Garnet type photoelectric type current sensor device and preparation method - Google Patents
Garnet type photoelectric type current sensor device and preparation method Download PDFInfo
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- CN103116057B CN103116057B CN201310018161.9A CN201310018161A CN103116057B CN 103116057 B CN103116057 B CN 103116057B CN 201310018161 A CN201310018161 A CN 201310018161A CN 103116057 B CN103116057 B CN 103116057B
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Abstract
The present invention relates to a kind of garnet type photoelectric type current sensor device and preparation method, light source, input optical fibre, input optical fibre collimating apparatus, garnet module, output optical fibre collimating apparatus, output optical fibre, detector is comprised successively along light path, described garnet module is take garnet as the stratiform module of core, comprise protective seam, permanent magnetic thin film, cushion and garnet, garnet module two ends outermost layer is the protective seam preventing permanent magnetic thin film oxidized; Be inwardly the permanent magnetic thin film for providing externally-applied magnetic field to middle layer garnet; Be inwardly cushion again; Centre is permanent magnetic thin film.Light path element is few, system is easy, reliability is high.Adopt the initial zero of permanent magnetic thin film fixed current sensor, permanent magnetic thin film has had the effect of inclined analyzing, and the magnetic field intensity that light path is passed through is large, and the depth of parallelism is good, and the rotation angle of polarized light is large, and precision is high.For extra-high voltage electric power system monitoring electric current provides technical support.
Description
Technical field
The present invention relates to a kind of sensor, particularly a kind of garnet type photoelectric type current sensor device and preparation method.
Background technology
Opto-electronic current transducer (Optical Current Sensor) is based on Magnet-Optic Faraday Effect, directly or indirectly to the device that electric current is tested.Opto-electronic current transducer has the following advantages relative to conventional electromagnetic current transformer: good insulation preformance, without leakage of oil explosion danger, magnetic saturation and ferromagnetic resonance, bandwidth can not be produced, dynamic range is large, compact conformation is lightweight, be applicable to the advantage such as relay protection and harmonic detecting.
Opto-electronic current transducer is divided into active type, passive, full fiber type and carbuncle type according to Principles and methods.The linearization of current sensor test result, error, zero crossings accuracy are very important parameters.Chinese patent 200610060605.5,200910056802.3, US Patent No. 20020145414A1, US20010008456A1, US005691837A, US005451864A, US006404190B1, US5075546, US20030146748A1 mention the change adopting small size magneto-optical crystal combining optical element to come probe current or magnetic field, but do not provide concrete solution for the non-linearization of test result and Zero drift in main amplifier.In previous patent of invention, a kind of magneto-optic current transducer and manufacture method (see patent of invention: application number 200910183929.1) thereof and magneto-optic current transducer and manufacture method thereof are (see patent of invention, application number: the noise caused shaken by solution and the modularized processing solution optical fiber of 201010168763.9) mentioning solution zero point drift, this system has considerable advantage, but the impacts of factor on system such as extraneous vibration, device shake are larger, there is following deficiency in addition, have much room for improvement:
1, optical element quantity is many, and system light path adjustment is complicated, then increases the probability introducing error;
2, before garnet, polaroid increases volume and the cost of whole device, is unfavorable for the highly integrated of system.
Summary of the invention
The present invention be directed to opto-electronic current transducer Problems existing, propose a kind of garnet type photoelectric type current sensor device and preparation method, while improving the measuring accuracy of sensor, enlarge measurement range, solution Zero drift in main amplifier, the linearization improving sensor measurement is gone forward side by side one-step optimization device architecture.
Technical scheme of the present invention is: a kind of garnet type photoelectric type current sensor device, comprise light source, input optical fibre, input optical fibre collimating apparatus, garnet module, output optical fibre collimating apparatus, output optical fibre, detector successively, described garnet module is take garnet as the stratiform module of core, comprise protective seam, permanent magnetic thin film, cushion and garnet, garnet module two ends outermost layer is the protective seam preventing permanent magnetic thin film oxidized; Be inwardly the permanent magnetic thin film for providing externally-applied magnetic field to middle layer garnet; Be inwardly cushion again.
Described permanent magnetic thin film is spine and groove interval strip distributed architecture.
A kind of garnet type photoelectric type current sensor device preparation method, set gradually light source, input optical fibre, input optical fibre collimating apparatus, garnet module, output optical fibre collimating apparatus, output optical fibre, detector along light path, described garnet module preparation process is as follows:
1) garnet is positioned in ultrasonic cleaner and cleans and dry;
2) adopt two panels stainless steel mask to overlay respectively in garnet surface, between two masks, angle is fixed, angular range: 0 °≤θ≤90 °;
3) garnet and mask are positioned over film growth system (magnetic control sputtering device or electron beam evaporation system), vacuumize; System background vacuum excellent 1.0 × 10
-4during Pa, heating garnet to 350 ~ 500 DEG C, operating air pressure is 0.2 ~ 5Pa; Grown buffer layer, permanent magnetic thin film, be incubated 1 hour respectively; Then be warming up to 550 DEG C ~ 800 DEG C and carry out double tempering; Growth protecting layer SiN or SiO when being cooled to room temperature
2film;
4) product takes out from film growth system, and magnetizes, and garnet material both side surface forms the permanent magnetic thin film of striped stride distribution, obtains garnet module.
A kind of garnet type photoelectric type current sensor device preparation method, set gradually light source, input optical fibre, input optical fibre collimating apparatus, garnet module, output optical fibre collimating apparatus, output optical fibre, detector along light path, described garnet module preparation process is as follows:
I) garnet is positioned in ultrasonic cleaner and cleans and dry;
II) garnet is positioned over film growth system (magnetic control sputtering device or electron beam evaporation system), vacuumizes; The excellent 1.0*10 of system background vacuum
-4during Pa, heating garnet to 350 ~ 500 DEG C, operating air pressure is 0.2 ~ 5Pa; Before and after garnet, difference grown buffer layer, permanent magnetic thin film, is incubated 1 hour; Then be warming up to 550 DEG C ~ 800 DEG C and carry out double tempering; Growth protecting layer SiN or SiO when being cooled to room temperature
2film;
III) product takes out from film growth system, adopts laser straight lithography to etch the permanent magnetic thin film on garnet, the permanent magnetic thin film that formation spine and groove distribute alternately; The permanent magnetic thin film cycle is less than laser wavelength of incidence, and wherein the ratio in spine's width and cycle is 0.25 ~ 0.75; Permanent magnetic thin film angular range 0 °≤θ≤90 ° of garnet both sides; Permanent magnetic thin film is magnetized, forms garnet module.
Beneficial effect of the present invention is: garnet type photoelectric type current sensor device of the present invention and preparation method, and light path element is few, system is easy, reliability is high.Adopt the initial zero of permanent magnetic thin film fixed current sensor, permanent magnetic thin film has had the effect of inclined analyzing, and the magnetic field intensity that light path is passed through is large, and the depth of parallelism is good, and the rotation angle of polarized light is large, and precision is high.For extra-high voltage electric power system monitoring electric current provides technical support.
Accompanying drawing explanation
Fig. 1 is garnet type photoelectric type current sensor device structural representation of the present invention;
Fig. 2 is the input end permanent magnetic thin film structural representation of garnet crystal module in garnet type photoelectric type current sensor device of the present invention;
Fig. 3 is the output terminal permanent magnetic thin film structural representation of garnet crystal module in garnet type photoelectric type current sensor device of the present invention.
Embodiment
Garnet type photoelectric type current sensor device structural representation as shown in Figure 1, adopts high Integrated design, comprises light source 1, input optical fibre 2, input optical fibre collimating apparatus 3, garnet module 4, output optical fibre collimating apparatus 5, output optical fibre 6, detector 7 successively.
Garnet module 4 two ends outermost layer be protective seam 401,407 for preventing permanent magnetic thin film oxidized, keep the magnetic of permanent magnetic thin film; Inwardly for permanent magnetic thin film 402,406 is for providing externally-applied magnetic field to middle layer garnet 404, produce the direction of magnetization of garnet 404; Be inwardly cushion 403,405 again.
Light source 1 is for providing a little or area source; Enter the protective seam 401 of garnet module 4 successively, permanent magnetic thin film 402, cushion 403 acting in conjunction convert the light that light source 1 produces to linearly polarized light, made in garnet 404 after polarized light rotation by permanent magnetic thin film, then exported after carrying out the effect of analyzer by cushion 405, permanent magnetic thin film 406, protective seam 407 successively; Finally by the change of detector 7 detecting polarization light Faraday rotation angle.
In garnet type photoelectric type current sensor device, protective seam 401,407 is Ta, Cr, SiO
2middle one or more than one, thickness 5nm ~ 1 μm; Described permanent magnetic thin film 402,406 is one or more in neodymium iron boron, SmCo, aluminium nickel cobalt, and thickness is 10nm ~ 50 μm; Described cushion 403,405 be in Cr, Ta, Ag, Al one or more, thickness is 5nm ~ 10 μm.
Garnet type photoelectric type current sensor device, light source 1 provides a little or area source for sensor, input optical fibre 2, output optical fibre signal transmission, and input optical fibre collimating apparatus 3, output optical fibre collimating apparatus 3 optimize optical signal quality; Garnet module 4 input end permanent magnetic thin film 402 surface forms the permanent magnetic thin film grating of strip distribution, spine and the groove of permanent magnetic thin film 402 are spaced apart, permanent magnetic thin film 402 cycle is less than optical maser wavelength, light source can be converted into linearly polarized light by permanent magnetic thin film 402, and there is the effect of polarizer, as shown in Figure 2.Linearly polarized light, through garnet 404, arrives the permanent magnetic thin film 406 with analyzing effect, and linearly polarized light arrives detector afterwards, and permanent magnetic thin film 406 structure of analyzing effect as shown in Figure 3.
The preparation method of core component garnet module 4 in garnet type photoelectric type current sensor device: I, garnet is positioned in ultrasonic cleaner and cleans and dry; II, adopt two panels stainless steel mask to overlay respectively in garnet surface, between two masks, angle is fixed, angular range: 0 °≤θ≤90 °; III, garnet and mask are positioned over film growth system (magnetic control sputtering device or electron beam evaporation system), vacuumize; System background vacuum excellent 1.0 × 10
-4during Pa, heating garnet (404) is to 350 ~ 500 DEG C, and operating air pressure is 0.2 ~ 5Pa; Grown buffer layer, permanent magnetic thin film, be incubated 1 hour respectively; Then be warming up to 550 DEG C ~ 800 DEG C and carry out double tempering; Growth protecting layer SiN or SiO when being cooled to room temperature
2film; IV, product takes out from film growth system, and magnetizes, and obtains garnet module.
In garnet type photoelectric type current sensor device, core component garnet module 4 also can take following methods to obtain, and I, garnet is positioned in ultrasonic cleaner and cleans and dry; II, garnet is positioned over film growth system (magnetic control sputtering device or electron beam evaporation system), vacuumizes; The excellent 1.0*10 of system background vacuum
-4during Pa, heating garnet (404) is to 350 ~ 500 DEG C, and operating air pressure is 0.2 ~ 5Pa; Before and after garnet, difference grown buffer layer, permanent magnetic thin film, is incubated 1 hour; Then be warming up to 550 DEG C ~ 800 DEG C and carry out double tempering; Growth protecting layer SiN or SiO when being cooled to room temperature
2film; III, product takes out from film growth system, adopts laser straight lithography to etch the permanent magnetic thin film on garnet, the permanent magnetic thin film that formation spine and groove distribute alternately; The permanent magnetic thin film cycle is less than laser wavelength of incidence, and wherein the ratio in spine's width and cycle is 0.25 ~ 0.75; Permanent magnetic thin film angular range 0 °≤θ≤90 ° of garnet both sides; Permanent magnetic thin film is magnetized, namely forms garnet module.
Garnet module 4 after magnetizing is positioned over the optical system of building in advance, adopts orthogonal light extinction method to measure faraday's rotation angle, calculate the intensity in extraneous electric current or magnetic field according to Ampère law.
In sum, garnet type photoelectric type current sensor device, design is unique and ingenious, and structure is simple, and easy to use, optical element is few, system is easy, reliability high precision is high, can be used as the ideal chose of optical current sensor.In addition, this technology is in fields such as optical magnetic field sensors, zero potential monitor, magnetization grating, optoisolators, and application prospect is expected equally.
Claims (2)
1. a garnet type photoelectric type current sensor device, it is characterized in that, comprise light source (1), input optical fibre (2), input optical fibre collimating apparatus (3), garnet module (4), output optical fibre collimating apparatus (5), output optical fibre (6), detector (7) successively, described garnet module (4) is take garnet as the stratiform module of core, comprise protective seam, permanent magnetic thin film, cushion and garnet, garnet module (4) two ends outermost layer is the protective seam (401,407) preventing permanent magnetic thin film oxidized; It is inwardly the permanent magnetic thin film (402,406) for providing externally-applied magnetic field to middle layer garnet (404); Be inwardly cushion (403,405) again.
2. garnet type photoelectric type current sensor device according to claim 1, it is characterized in that, described permanent magnetic thin film is spine and groove interval strip distributed architecture.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103675408A (en) * | 2013-12-11 | 2014-03-26 | 上海理工大学 | Garnet type current sensing device and garnet type current sensing system |
| CN103837729B (en) * | 2014-03-21 | 2016-03-30 | 哈尔滨理工大学 | A kind of based on through type film-type optical current mutual inductor |
| CN104020337A (en) * | 2014-06-17 | 2014-09-03 | 上海理工大学 | Garnet voltage and current sensor |
| CN106707000A (en) * | 2016-12-12 | 2017-05-24 | 上海理工大学 | Graphene-garnet type photoelectric current sensor device |
| CN106546867B (en) * | 2017-01-10 | 2019-05-24 | 上海理工大学 | Based on garnet optics leakage current sensor |
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| CN101458403A (en) * | 2009-01-04 | 2009-06-17 | 上海舜宇海逸光电技术有限公司 | Magneto-optical crystal, method for making same and application apparatus of the magneto-optical crystal |
| CN101672870A (en) * | 2009-08-13 | 2010-03-17 | 苏州纳米技术与纳米仿生研究所 | Magneto-optic current transducer and manufacturing method thereof |
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| JP3424095B2 (en) * | 2000-08-02 | 2003-07-07 | ミネベア株式会社 | Magneto-optical body and optical isolator using this magneto-optical body |
| WO2002069029A1 (en) * | 2001-02-28 | 2002-09-06 | Board Of Control Of Michigan Technological University | Magneto-photonic crystal isolators |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4273609A (en) * | 1978-10-25 | 1981-06-16 | Sperry Corporation | Rinse melt for LPE crystals |
| CN101458403A (en) * | 2009-01-04 | 2009-06-17 | 上海舜宇海逸光电技术有限公司 | Magneto-optical crystal, method for making same and application apparatus of the magneto-optical crystal |
| CN101672870A (en) * | 2009-08-13 | 2010-03-17 | 苏州纳米技术与纳米仿生研究所 | Magneto-optic current transducer and manufacturing method thereof |
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