CN103114277A - Atomic layer deposition equipment - Google Patents
Atomic layer deposition equipment Download PDFInfo
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- CN103114277A CN103114277A CN2013100720671A CN201310072067A CN103114277A CN 103114277 A CN103114277 A CN 103114277A CN 2013100720671 A CN2013100720671 A CN 2013100720671A CN 201310072067 A CN201310072067 A CN 201310072067A CN 103114277 A CN103114277 A CN 103114277A
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Abstract
The invention discloses atomic layer deposition equipment which is an openable and closable closed cavity comprising a cover plate and a main cavity, wherein the inner surface of the cover plate is provided with an air path unit; the air path unit comprises a plurality of airflow channels; the plurality of airflow channels are spaced through spacing layers, and each airflow channel is communicated with a plurality of air holes arranged on the outer surface of the cover plate; the main cavity comprises a rotatable loading disc and a transmission system; the transmission system drives the rotatable loading disc to rotate; the rotatable loading disc is provided with a groove used for placing a wafer; the plurality of airflow channels at least include a first airflow channel and a second airflow channel; the first airflow channel is used for accessing a reaction source gas; and the second airflow channel is used for exhausting the unreacted reaction source gas. The atomic layer deposition equipment disclosed by the invention can increase the speed of atomic layer epitaxy, save the single process time and enhance the growth rate of the atomic layer epitaxy by increasing the rotation speed of the loading disc.
Description
Technical field
The present invention relates to microelectronic device and make the field, relate in particular to a kind of ald (ALD) equipment.
Background technology
Ald (Atomic layer deposition-ALD) is a kind ofly film successively can be deposited to the method for substrate surface with the monoatomic layer form.Ald and common electroless plating have similarity.But in atomic layer deposition process, the chemical reaction of new one deck atomic film is directly to be associated with one deck before, and this mode makes every secondary response only deposit one deck atom.
Ald (ALD) technology becomes the necessary technology that microelectronic device is made the field just gradually, such as stopping for the preparation of the high K medium in transistor gate stacking and electrical condenser and metallic film, copper/seed crystal film, etch stop layer, multiple clearance layer and film diffusion blocking layer, magnetic head and non-volatility memorizer etc.ALD compares the depositing technics such as traditional CVD and PVD and has inborn advantage.It takes full advantage of surperficial saturated reaction (surface saturation reactions), innately possesses the stability of gauge control and height, and is not too responsive to the variation of temperature and reaction source flow.The film that obtains so not only has high purity but also have high-density, and is not only smooth but also have model keeping character highly, even also can realize good stepcoverage for the vertical structure of wide ratio up to 100: 1.ALD also complies with industry member to the trend of the development of low heat budget more, and most techniques can carried out below 400 degrees centigrade, and traditional chemical vapor deposition method will be completed more than 500 degrees centigrade.The uniqueness of ALD technology has determined that its utilization prospect in semi-conductor industry is very extensive.The reducing of the dielectric film thickness that the dwindling of device size causes exceeded its physics and the electricity limit, and high vertical wide ratio is seen everywhere in device architecture simultaneously.Because traditional deposition technology is difficult to satisfy the demands, the ALD technology has fully shown its advantage, continues to dwindle for device size the space that provides wide.
In atomic layer deposition process, reaction source and oxygenant are alternately to pass into reaction chamber, and this is the difference with CVD technology maximum; The cycle of a deposition process generally is divided into four steps: 1, logical reaction source a; 2, emptying reaction source a; 3, logical oxygenant b; 4, emptying oxygenant b.In above-mentioned process, according to the different emptying needs time of 10～100 seconds of reaction chamber size, two atomic shells of can only growing at most each reaction time, very low of growth efficiency like this, even grow simultaneously by the multi-disc substrate, the process-cycle also can't shorten.
Summary of the invention
For addressing the above problem, shorten the cycle growth time of ALD, the present invention proposes a kind of atomic layer deposition apparatus, it is the sealing chamber to be opened/closed that is made of cover plate and main body chamber; Described cover inner surface is provided with the gas circuit unit, described gas circuit unit comprises the first gas channel and the second gas channel at least, and described the first gas channel and the second gas channel are by wall separately, and each described gas channel all has pore to be connected with the outside; Described main body chamber comprises rotatable carrier and transmission system, and described transmission system drives described rotatable carrier and is rotated, and is provided with the groove of placing wafer on described rotatable carrier.
Traditional ALD emptying time will take very large time cost, the technology that this patent is carried will not have evacuation procedure, but utilize the air-flow technology that the vapor reaction source is isolated in fixing reaction source zone, when wafer arrives this reaction source zone, to carry out the deposition reaction of atomic shell, when leaving the reaction source zone, will have inert gas that the unnecessary reaction source molecule of surface adsorption is drained, reach cleaning purpose, prepare for arriving next reaction source zone.Like this, each reaction source relative isolation of zone, can not form the stacking effect of CVD.
Description of drawings
Fig. 1 is the one-piece construction figure of sublayer, Central Plains of the present invention depositing device;
Fig. 2 is the one-piece construction lateral cross-sectional view of sublayer, Central Plains of the present invention depositing device;
Fig. 3 is the inboard gas circuit structure distribution plan of the cover plate of sublayer, Central Plains of the present invention depositing device;
Fig. 4 is the three-dimensional structure diagram of gas circuit unit on the cover plate of sublayer, Central Plains of the present invention depositing device;
Fig. 5 is the air-path interface distribution plan in the depositing device cover plate outside, sublayer, Central Plains of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, the present invention proposes a kind of atomic layer deposition apparatus, it is a sealing chamber to be opened/closed that is made of cover plate 1000 and main body chamber 2000; Wherein said cover plate 1000 internal surfaces are provided with gas circuit unit 1010; Described main body chamber has rotational system 2005, rotation carrier 2001 and sealing rubber ring 2003.
In one embodiment of the present invention, as Fig. 1 and shown in Figure 5, described cover plate 1000 has two groups of gas circuit unit 1010, these two groups of gas circuit unit are symmetrical with the cover plate geometric centre, every group of gas circuit unit has two gas channels, i.e. the first gas channel 1001 and the second gas channel 1003, described the first gas channel 1001 communicates with air inlet port on described cover plate, be used for passing into reaction source gas, and the second gas channel 1003 communicates with aspirating hole on described cover plate, is used for described reaction source gas is extracted out.And do not have the zone of gas circuit cell distribution and cover plate center to be connected with the pore 1006 at cover plate back on cover plate, be used for passing into rare gas element to consist of the 3rd gas channel 1005, the three gas channels, to stop described reaction source gas to external diffusion.
The concrete setting of each gas channel such as Fig. 2 and shown in Figure 4 in described gas circuit unit, every group of gas circuit modular construction is similar: the centre is the airflow space in a rectangle or rectangle long and narrow cross section, and this space is connected with the air inlet port 1009 that leads to the cover plate dorsal part, consists of the first gas channel 1001; And the first gas channel 1001 around be provided with the first annular spacer 1002, i.e. interval between the first gas channel and the second gas channel, its bed thickness is even; The first annular spacer 1002 peripheries are the uniform annular steam of a width space, its with lead to two aspirating holes 1007 of cover plate dorsal part, 1008 and be connected, consist of the second gas channel 1003; The second gas channel periphery is provided with the second annular spacer 1004, i.e. interval between the second gas channel and the 3rd gas channel, and its bed thickness is even.Wherein, the first annular spacer 1002 and the second annular spacer 1004 are outside outstanding with respect to cover inner surface, and the overhang of the first wall 1002 is not higher than the second wall 1004.
As depicted in figs. 1 and 2, main body chamber 2000 is a cylindrical structure: inlet mouth 2006 is arranged at the bottom, stepper-motor 2005 is arranged in the middle of the bottom, it is by the magnetic seal structure driven, drive and transmit bar 2004 rotations, thereby drive carrier 2001 rotations, carrier 2001 surface design have the groove 2002 of suitable shape, are used for placing wafer.
As shown in figures 1 and 3, when cover plate 1000 and main body chamber 2000 installed combination, sealed by the rubber ring 2003 contact cover plates 1000 on main body chamber 2000 tops and two planes of main body chamber.The key that combination wherein is installed is: when suitable pressure is arranged in chamber, each organizes gap little and that as far as possible equate of trying one's best of the second annular spacer 1004 and rotatable carrier 2001 maintenances of gas circuit unit, and connects first, second and third gas channel by these gaps.In addition, form connecting passage between the sidewall of described main body chamber 2000 and described rotatable carrier 2001, described main body chamber 2000 bottoms are provided with inlet mouth 2006, and described inlet mouth 2006 is connected with described the 3rd gas channel 1005 by described connecting passage.
The present invention proposes also to have proposed a kind of method of utilizing above-mentioned atomic layer deposition apparatus to carry out ald.At first, pass into the rare gas element of certain flow to inlet mouth 2006 and pore 1006, wherein, the pore 1006 of inlet mouth 2006 and cover plate center position all is connected with the 3rd gas channel; Secondly, bleed from the described pore 1007,1008 that is connected with the second gas channel of each gas circuit unit, and make by adjusting pumping speed the pressure that keeps relative stability in the chamber enclosed space, wherein said pore 1007,1008 is designed to aspirating hole; Then, and pass into reaction source gas a in pore 1009 that wherein the first gas channel of one group of gas circuit unit is connected, and with pore 1009 that the first gas channel of another group gas circuit unit is connected in pass into another kind of reaction source gas b.Utilize above-mentioned atomic layer deposition apparatus to carry out in atomic layer deposition process, by adjusting suitable various charge flow rate ratios, suitable pumping speed, the void space described reaction source gas a of distribution or b that can be between the first gas channel, the first wall 1002 and the rotatable carrier 2001 of each gas circuit unit, and indifferent gas in the 3rd gas channel is known from experience by the second wall of each gas circuit unit and the space between rotatable carrier 2001 and is taken away from the second gas channel; In addition, because the second wall and the space between rotatable carrier 2001 of each gas circuit unit are enough little, so rare gas element has during by above-mentioned gap enough flow velocitys to stop the reaction source a of the second gas channel inside or b to external diffusion, so just the space between and rotatable carrier 2001 inner at the second wall forms a stable a or b reaction source region.in addition, when rotatable carrier 2001 rotates, after each wafer on dish can first react the source region through a successively, through second, transcribed spacer between three gas channels purges, then after reacting the source region through b, again through second, transcribed spacer between three gas channels purges, make the reaction source gas that not to react purge to the second gas channel, and then extract out from the second gas channel, and can not cause reaction source gas outwards to flow out, the situation of mixing with other reaction source gas, so circulation is gone down, atomic shell can periodically be deposited on and form film on wafer.
When the equipment of stating in the use carries out ald, flow by regulating each inlet mouth and the control pressure of bleeding point, make under airflow function and respectively organize in the gas circuit unit gas in the first gas channel and discharge by the second gas channel fully, can not be diffused into the 3rd gas channel, thereby form stable reaction source region in each second gas channel.
Pass into different reaction source gas in the first gas channel of each gas circuit unit, when rotatable carrier rotation, on dish, any wafer will be exposed to successively the reaction source interval and carry out surface reaction, when moving to the second gas channel and the 3rd gas channel interval region, the unnecessary reaction source molecule of surface adsorption can be removed, will carry out the surface reaction of the second provenance near next group first gas channel and the second gas channel group the time.Can by on the cover board arranging as much as possible the gas circuit unit, can carry out the chemical reaction in multiple source.
By above method, saved the long purge of conventional atomic layer depositing operation, saved purge time, help very much to enhance productivity.
Art technology people personnel are easy to draw: in this structure, rely on different reaction sources and the reaction mechanism of substrate, regulate corresponding gas circuit unit the second gas channel inner width, adjust simultaneously the rotating speed of rotation carrier 2001, can guarantee that respective sources fully reacts on the surface.
In an alternative embodiment of the invention, above-mentioned the first gas channel also can be arranged to bleed-off passage, be used for extracting the reaction source gas that does not react out, and above-mentioned pore 1009 is arranged to aspirating hole; Described the second gas channel is arranged to induction trunk, is used for passing into reaction source gas, and described two pores 1007,1008 are arranged to air inlet port.
In another embodiment of the present invention, be furnished with the gas circuit unit more than two on cover plate 1000, the quantity of gas circuit unit can be identical with the number of reaction source gas, also can be the multiple of reaction source gas number, and the gas circuit unit that passes into same reaction source gas arranges separately, i.e. pass into different reaction source gas in the gas circuit unit of adjacent setting.This mode can not carried the growth cycle number that improves the unit time in high-revolving situation, thereby improves growth efficiency.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. atomic layer deposition apparatus, it is the sealing chamber to be opened/closed that is made of cover plate and main body chamber;
Described cover inner surface is provided with the gas circuit unit, described gas circuit unit comprises the first gas channel and the second gas channel at least, and described the first gas channel and the second gas channel are by wall separately, and each described gas channel all has pore to be connected with the outside;
Described main body chamber comprises rotatable carrier and transmission system, and described transmission system drives described rotatable carrier and is rotated, and is provided with the groove of placing wafer on described rotatable carrier.
2. equipment as claimed in claim 1, it is characterized in that, described gas circuit unit also comprises the 3rd gas channel, it is arranged on described the first gas channel and the second gas channel is peripheral, be used for passing into rare gas element, to stop the reaction source gas that passes into from one of described the first gas channel and second gas channel to external diffusion, another gas channel is used for described rare gas element and the complete reaction source gas of unreacted are extracted out.
3. equipment as claimed in claim 2, is characterized in that, described the first gas channel, the second gas channel and the 3rd gas channel are interconnected by the gap between wall and described rotatable carrier.
4. equipment as claimed in claim 1, is characterized in that, described wall comprises the first annular spacer and the second annular spacer; Described the first annular spacer is surrounded and is formed the airflow space that has long and narrow interface in the middle of, consists of the first gas channel; Described the second annular spacer is arranged on the periphery of described the first annular spacer, and middle formed annular steam space consists of the second gas channel; The airflow space of described the second annular spacer periphery consists of described the 3rd gas channel.
5. equipment as claimed in claim 1, is characterized in that, described wall comprises the first annular spacer and the second annular spacer; Described the first annular spacer is surrounded and is formed the airflow space that has long and narrow interface in the middle of, consists of the first gas channel; Described the second annular spacer is arranged on the periphery of described the first annular spacer, and middle formed annular steam space consists of the second gas channel; The airflow space of described the second annular spacer periphery consists of described the 3rd gas channel.
6. equipment as described in one of claim 2-4, is characterized in that, is provided with a plurality of described gas circuits unit on described cover plate, and the first gas channel of adjacent gas circuit unit passes into different reaction source gas.
7. equipment as claimed in claim 4, is characterized in that, described the first annular spacer and the second annular spacer are outwards outstanding with respect to cover inner surface, and described the first annular spacer is not higher than described the second annular spacer.
8. equipment as claimed in claim 6, is characterized in that, have certain interval between described the 3rd gas channel and rotatable carrier, and this spaced far is greater than the gap between described the first annular spacer and the second annular spacer and rotatable carrier.
9. equipment as claimed in claim 2, it is characterized in that, form connecting passage between the sidewall of described main body chamber and described rotatable carrier, described main body cavity bottom is provided with inlet mouth, and described inlet mouth is connected with described the 3rd gas channel by described connecting passage.
10. equipment as claimed in claim 6, is characterized in that, the number of described gas circuit unit is required reaction source gas number or its multiple.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100720671A CN103114277A (en) | 2013-03-07 | 2013-03-07 | Atomic layer deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100720671A CN103114277A (en) | 2013-03-07 | 2013-03-07 | Atomic layer deposition equipment |
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| CN103114277A true CN103114277A (en) | 2013-05-22 |
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| CN2013100720671A Pending CN103114277A (en) | 2013-03-07 | 2013-03-07 | Atomic layer deposition equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882410A (en) * | 2014-04-17 | 2014-06-25 | 中国科学院半导体研究所 | ALD (atomic layer deposition) equipment and reaction source diffusion distribution and control method applied to ALD equipment |
| CN108026640A (en) * | 2015-07-23 | 2018-05-11 | 梅耶博格（荷兰）有限公司 | The precipitation equipment that can be planned |
| CN110565072A (en) * | 2018-06-05 | 2019-12-13 | 长鑫存储技术有限公司 | Atomic layer deposition method |
| CN114375349A (en) * | 2019-06-28 | 2022-04-19 | Beneq有限公司 | Atomic layer deposition apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050160984A1 (en) * | 2002-07-03 | 2005-07-28 | Jacques Schmitt | Method and apparatus for ALD on a rotary susceptor |
| CN101826446A (en) * | 2009-03-04 | 2010-09-08 | 东京毅力科创株式会社 | Film deposition apparatus and film deposition method |
-
2013
- 2013-03-07 CN CN2013100720671A patent/CN103114277A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050160984A1 (en) * | 2002-07-03 | 2005-07-28 | Jacques Schmitt | Method and apparatus for ALD on a rotary susceptor |
| CN101826446A (en) * | 2009-03-04 | 2010-09-08 | 东京毅力科创株式会社 | Film deposition apparatus and film deposition method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882410A (en) * | 2014-04-17 | 2014-06-25 | 中国科学院半导体研究所 | ALD (atomic layer deposition) equipment and reaction source diffusion distribution and control method applied to ALD equipment |
| CN103882410B (en) * | 2014-04-17 | 2016-05-18 | 中国科学院半导体研究所 | ALD equipment and be applied to the reaction source diffusion profile Detection & Controling method of ALD equipment |
| CN108026640A (en) * | 2015-07-23 | 2018-05-11 | 梅耶博格（荷兰）有限公司 | The precipitation equipment that can be planned |
| CN108026640B (en) * | 2015-07-23 | 2021-02-09 | 巴斯夫涂料有限公司 | Programmable deposition apparatus |
| CN110565072A (en) * | 2018-06-05 | 2019-12-13 | 长鑫存储技术有限公司 | Atomic layer deposition method |
| CN110565072B (en) * | 2018-06-05 | 2023-06-09 | 长鑫存储技术有限公司 | Atomic layer deposition method |
| CN114375349A (en) * | 2019-06-28 | 2022-04-19 | Beneq有限公司 | Atomic layer deposition apparatus |
| CN114375349B (en) * | 2019-06-28 | 2023-12-19 | 青岛四方思锐智能技术有限公司 | Atomic layer deposition apparatus |
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Application publication date: 20130522 |