CN103109225B - Imaging optical system - Google Patents
Imaging optical system Download PDFInfo
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- CN103109225B CN103109225B CN201180044617.8A CN201180044617A CN103109225B CN 103109225 B CN103109225 B CN 103109225B CN 201180044617 A CN201180044617 A CN 201180044617A CN 103109225 B CN103109225 B CN 103109225B
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- 238000003384 imaging method Methods 0.000 title claims abstract description 90
- 230000003287 optical Effects 0.000 title claims abstract description 69
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 210000001747 Pupil Anatomy 0.000 claims description 50
- 238000006073 displacement reaction Methods 0.000 claims description 12
- 238000002314 autoradiolysis reaction Methods 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims 1
- 230000000875 corresponding Effects 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 210000002381 Plasma Anatomy 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000000149 penetrating Effects 0.000 description 3
- 230000004301 light adaptation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 230000002441 reversible Effects 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 230000001678 irradiating Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000644 propagated Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 230000001360 synchronised Effects 0.000 description 1
Abstract
A kind of imaging optical system (9) for projecting exposure system, it has at least one deformation imaging optic element (M1 to M6).This permission illuminates image field the most completely with the big object-side numerical aperture on first direction, without expanding the scope of reticle to be imaged, and does not reduce the production capacity of projection exposure system.
Description
Technical field
The present invention relates to the imaging optical system for projecting exposure system, for projecting the illumination optical system of exposure system
System and there is the optical system of the type imaging optical system.The invention still further relates to the projection exposure with the type optical system
System, for projecting the reticle of exposure system, the method manufacturing micro-structural assembly by means of this projection exposure system
With the assembly manufactured by the method.
Background technology
From DE102007062198A1, US7,414,781B2, US7,682,031B2, and from WO2010/091800A1
Would know that imaging optical system.Etching system is would know that from US2008/0036986A1.
Summary of the invention
It is an object of the invention to the imaging optical system being developed for projecting exposure system so that be modified to picture element further
Amount.
According to the present invention, it is appreciated that, along with the increase of object-side numerical aperture, thing side's main beam angle must increase, and this can
Cause the capture-effect caused by absorbent structure, and cause layer to transmit the problem of (layer transmission) aspect,
The strong apodization effect especially caused by reticle coating.According to the present invention, it is further appreciated that, can be by deformation
(anamorphically) imaging optical system, especially by being deformed into as projectoscope (lens) system, with predetermined imaging ratio
Example, by the reticle of preliminary dimension from thing field imaging to predetermined illuminated field, on the direction of the first imaging scale, illumination
Field is illuminated completely, simultaneously the production capacity (throughput) to projection exposure system of the reduction imaging scale in second direction
Not there is negative effect, but this reduction imaging scale can be compensated by suitable measure.
Therefore, distorting lens system allow illuminate image planes completely with big object-side numerical aperture in a first direction, without
Expand the scope of reticle to be imaged on this first direction, and the subtracting of production capacity of exposure system does not occur to project
Little, and also allow to minimize the loss of the image quality caused by the oblique incidence of illumination light.
By having the imaging scale that symbol is identical on the direction of two principal planes, avoid as upset.Optical system,
Especially on the direction of two principal planes, there is positive imaging scale.
Preferably, described at least one be deformed into as projectoscope system has at least two part mirror system, at least a part of which
One shifting ground imaging.The imaging optical system with at least two part mirror system (imaging of at least one of which shifting ground) is special
You Liyu not construct, and allow imaging verify each require particularly flexible adaptation.Especially, the first (i.e. thing side) portion
Divide the imaging of mirror system shifting ground.This can ensure that the radiation being incident on thing field and therefore reflecting is the most overlapping.Part II mirror system
Also it is deformation (anamorphic).It can also be non-deformed (non-anamorphic).
Preferably, projectoscope system has the emergent pupil of circle.Image-side numerical aperture therefore independent of direction.Which ensure that with
It is orientated unrelated resolution.Therefore, especially, mirror system has the entrance pupil of elliptical shape according to a modification of this invention.Therefore, ellipse
The semiaxis relation each other of circle is identical from different imaging scale or different object-side numerical aperture relation each other or phase
Instead.
Preferably, described at least one be deformed into as projectoscope system comprises at least one reflecting mirror, the most described instead
At least one penetrating mirror has free shape surface.Thus, it is deformed into as projectoscope system comprises at least one reflecting mirror.This
In, the reflecting mirror of lesser amt causes less loss (transmission loss).Large number of reflecting mirror allows
Correction that is more flexible to image error and that improve, and allow higher numerical aperture.According to the present invention, projectoscope system comprises
At least one, the most multiple, especially at least four, especially at least six, especially eight reflecting mirrors.Especially, instead
Penetrate mirror and can be configured to reflect the reflecting mirror of EUV-radiation.
The optical element with free shape surface allows the particularly flexible design to imaging character.Particularly in imaging
Optical system to determined number reflecting mirror in the case of, these give the further degree of freedom for correcting image error.
Preferably, the half as much again of the imaging scale that imaging scale in a first direction is at least in second direction is big.Especially
It is that the twice of its imaging scale being at least in second direction is big.Here and hereinafter, imaging scale is used for referring to by becoming
As size and dimension of object (that is, in the image field of projectoscope system the size of the structure of imaging with will imaging in thing field
The size of structure) the absolute value of imaging scale that is given of ratio.Thus it is ensured that scanning direction can be perpendicular to, at whole width
On degree, exposure has the illuminated field of preset width, and this illuminated field has predetermined mask mother matrix, especially has covering of preliminary dimension
Mould mother matrix.Otherwise, the less imaging scale on the direction vertical with the width of illuminated field can be compensated, the strongest minification,
Especially by the scanning speed increased, therefore this less imaging scale does not have disadvantageous effect.Especially, with scanning direction
The imaging scale of the vertical minimizing on direction is not resulted in the loss of production capacity.
Preferably, the different object-side numerical aperture of directional dependence allow the expedients of imaging optical system.Particularly,
The problem that thus can avoid transmitting about the capture-effect on mask and layer.Especially, the object-side numerical aperture on specific direction
(NAO) the object-side numerical aperture half as much again on the direction being at least perpendicularly to the direction, especially at least twice.
Preferably, illuminator has emergent pupil, and its shape design is corresponding with the entrance pupil of projectoscope system.According to this
Bright, it is thus provided that the illuminator with oval emergent pupil.
Especially, this is by oval pupil facet reflecting mirror or next by the oval layout of the pupil facet on pupil facet reflecting mirror
Realizing, this envelope being arranged as all pupil facet forms the layout of ellipse.
Especially, the semiaxis of the emergent pupil of the pupil facet reflecting mirror of elliptical configuration or illuminator relation each other with
The different imaging scale of projectoscope system or the semiaxis relation each other of its entrance pupil are identical.
There is big image-side numerical aperture, little main beam angle and the image optics system of big image space scanning seam (slot) width
System, it is allowed to the structure of reticle is projected in image field particularly well.
The present invention also provides for a kind of lamp optical system for projecting exposure system, and it is anti-that it comprises at least one pupil facet
Penetrating mirror (18), be characterised by oval emergent pupil, the half shaft length of this emergent pupil differs at least 10% each other.This has ellipse and goes out
The lamp optical system of pupil is particularly well-suited for being deformed into as projectoscope system.Utilize the elliptical configuration of pupil facet reflecting mirror,
Can be particularly easy to realize the oval emergent pupil of lamp optical system.
Optical system according to the present invention has the imaging optical system according to the present invention, and lamp optical system, its
Radiation transmission for autoradiolysis in future source is to thing field.Projection exposure system according to the present invention is according to the optical system of the present invention
System, and radiation source.Optical system according to the present invention and the advantage of the projection exposure system of the present invention corresponding to above in association with
Imaging optical system have been described above those.Preferably, have can displacement in a scanning direction for above-mentioned projection exposure system
Reticle keeper, to keep reticle, it is characterised in that imaging optical system imaging scale in a scanning direction is little
Imaging scale on the direction vertical with scanning direction.By this projection exposure system, wherein imaging optical system is in scanning
Imaging scale on direction, can be complete by higher scanning speed less than the imaging scale on the direction vertical with the direction
Production capacity loss on compensated scanning direction.Especially, imaging optical system 9 imaging scale in a scanning direction is up to
The half of the imaging scale on direction being perpendicularly to the direction.Imaging scale on scanning direction and the direction vertical with the direction
On ratio especially 1:2,1:3,1:4,1:5,1:6,1:8,1:10,2:3,2:5 or 3:4 of imaging scale.Radiation source can be
EUV (extreme ultraviolet) light source, such as LPP (laser-produced plasma) light source or GDP (plasma that gas discharge produces)
Light source.
Critical with on the direction being perpendicularly to the direction of critical dimension (critical dimension) on scanning direction
The reticle that size is different is particularly suitable for and is deformed into as projection optics system is used together.It is preferably according on scanning direction
And the different imaging scale on the direction vertical from the direction, construct the structure on reticle to be imaged on and overall size two thereof
Person.In order to consider bigger minification, correspondingly reticle is configured to bigger, the most in a scanning direction.
The present invention also provides for a kind of method of assembly for manufacturing micro-structural, and it has following methods step: provide
Reticle and the wafer with radiation-sensitive layer；By means of above-mentioned projection exposure system by the arrangement projects on reticle extremely
Radiation-sensitive layer on wafer.The present invention also provides for the assembly that said method manufactures.Manufacturing method according to the invention and according to
The advantage of the assembly of the present invention is corresponding to those having been described above above with reference to the projection exposure system according to the present invention.
Accompanying drawing explanation
By means of accompanying drawing, the further advantage of the present invention and details occur, wherein in the explanation of multiple embodiments:
Fig. 1 schematically illustrates the meridional section through the projection exposure system for EUV lithography；
Fig. 2 schematically illustrates the part figure of the projection exposure system according to Fig. 1, to be shown according to first embodiment
Light path in imaging optical system；
Fig. 3 shows the view in the plane vertical with the plane in Fig. 2 according to Fig. 2；
Figure 4 and 5 show the view of further embodiment according to Fig. 2 and 3；
Fig. 6 and 7 shows the corresponding views of the 3rd embodiment；And
Fig. 8 and 9 shows the corresponding views of the 4th embodiment.
Detailed description of the invention
Fig. 1 schematically illustrates the assembly of the projection exposure system 1 for micro-lithography with meridional section.Projection exposure system
The illuminator 2 of 1 comprises radiation source 3, and for exposing the lamp optical system 4 of the thing field 5 in object plane 6.It is arranged in thing
Only it being only partially shown in 5 and by reticle keeper 8() reticle 7 that keeps is exposed at this.
The projection optics system 9 shown schematically only illustrated in Fig. 1 for imaging in the image field 10 in image plane 11 by thing field 5
In.Therefore, projection optics system 9 also referred to as imaging optical system.Structure on reticle 7 is imaged in the photosensitive of wafer 12
On layer, wafer 12 is arranged in the region of the image field 10 in image plane 11, and by the wafer holders 13 being also schematically outlined
Keep.
Radiation source 3 is EUV radiation source, and it launches EUV-radiation 14.EUV radiation source 3 launch useful radiation wavelength from
In the range of 5nm to 30nm.Also possible for photoetching and other wavelength that can obtain from suitable light source.Radiation source 3 can
For plasma source, such as DPP source or LPP source.Radiation source based on synchrotron also is used as radiation source 3.This area skill
Art personnel can obtain the information of the type radiation source from such as US6859515B2.Condenser (collector) 15 is provided, with
Make EUV-radiation 14 bunchy from EUV radiation source 3.
EUV-radiation 14 also referred to as illumination light or imaging.
Lamp optical system 4 comprises a facet reflecting mirror 16, and it has substantial amounts of field facet (facet) 17.Field facet is anti-
Penetrate mirror 16 be arranged in lamp optical system 4 and in the plane of object plane 6 optical conjugate.EUV-radiation 14 is by field facet reflecting mirror
The 16 pupil facet reflecting mirrors 18 reflexing to lamp optical system 4.Pupil facet reflecting mirror 18 has substantial amounts of pupil facet 19.By means of
Pupil facet reflecting mirror 18, images in the field facet 17 of field facet reflecting mirror 16 in thing field 5.
For each facet 17 on field facet reflecting mirror 16, the most just on pupil facet reflecting mirror 18, there is one
The pupil facet 19 of association.Between facet 17 on the scene and pupil facet 19, it is configured with optical channel the most respectively.Facet reflecting mirror 16,18
The facet 17,19 of at least one is reversible (switchable).For this purpose, it is possible to provide MEMS (MEMS).
Especially, facet 17,19 can tiltably be arranged on facet reflecting mirror 16,18.Here it is possible to only by facet 17,19
A part, the most at most 30%, at most 50% or at most 70% are configured to tiltable.May be alternatively provided as all of facet 17,
19 is all tiltable.Especially, reversible facet 17,19 is a facet 17.By inclined field facet 17, it is to corresponding pupil
The structure of the distribution of facet 19 and therefore optical channel can be changed.In order to understand the facet with tiltable facet 17,19
The details of reflecting mirror 16,18 and the details of lamp optical system 4, with reference to DE102008009600A1.
Lamp optical system 4 also can comprise other reflecting mirror 20,21 and 22, and reflecting mirror 20,21 and 22 forms transmission light
System 23.Last reflecting mirror 22 of transmission optical system 23 is grazing incidence mirror.Pupil facet reflecting mirror 18 and transmission
Optical system 23 forms optical system subsequently, for illumination light 14 being transmitted to thing field 5.Especially, reflect when pupil facet
When mirror 18 is arranged in the entrance pupil of projection optics system 9, transmission optical system 23 can be omitted.
Lamp optical system 4 has emergent pupil, its shape adaptation in the shape of the entrance pupil of projection optics system 9, especially with
The latter is the most consistent.Especially, the emergent pupil of lamp optical system 4 is oval.This especially can be divided by the pupil of elliptical configuration
Face reflecting mirror 18 realizes.As its replacement, pupil facet 19 is also disposed on pupil reflecting mirror 18 so that pupil facet has ellipse
The envelope of circular structure.
Especially, the semiaxis of oval pupil facet reflecting mirror 18 has two different half shaft length, half bigger axial length
Extremely a little less five times of degree the especially first half shaft length, especially at least twice.Especially, half shaft length have 1:2,1:3,
The ratio of 1:4,1:5,1:6,1:8,1:10,2:3,2:5 or 3:4.
Therefore, the semiaxis of the emergent pupil of lamp optical system 4 has two different half shaft length, and bigger half shaft length is outstanding
Its with the first half shaft length to a little less five times, especially at least twice is the biggest.Especially, half shaft length have 1:2,1:
3, the ratio of 1:4,1:5,1:6,1:8,1:10,2:3,2:5 or 3:4.
In order to more simply describe position relationship, depict Descartes's xyz-coordinate system the most respectively.In Fig. 1
X-axle is perpendicular to the plane of accompanying drawing and extends inwardly.Y-axle is towards right extension.Z-axis downwardly extends.Object plane 6 and image plane 11 2
Person is parallel to xy-plane and extends.
Can displacement reticle keeper 8 in a controlled manner so that in projection exposure system, reticle 7 can
Direction of displacement top offset in object plane 6.It is thus possible in check mode displacement wafer holders 13 so that wafer 12 can
Direction of displacement top offset in image plane 11.As a result, it is possible on the one hand scanning reticle 7 is through thing field 5, and the most brilliant
Sheet 12 passes image field 10,.Direction of displacement in accompanying drawing is parallel to y-direction.Hereinafter, this is also referred to as scanning direction.Preferably,
Reticle 7 and wafer 12 displacement in a scanning direction are carried out about synchronized with each other.
Fig. 2 and 3 shows the optical design of the first structure of projection optics system 9.Show radiation 14 from center thing
The light path of the independent light beam that two homologue site of site and two relative edges from qualifier field 5 extend.According to Fig. 2 and 3
Projection optics system 9 there are six reflecting mirrors altogether, it starts by the most numbered M1 from thing field 5 on the direction of light path
To M6.Figure shows the reflecting surface of the reflecting mirror M1 to M6 calculated in the design of projection optics system 9.The face only illustrated
A part is actually partially used for radiating the reflection of 14, as seen from accompanying drawing.In other words, to that indicated in the drawings compare,
The actual configuration of reflecting mirror M1 to M6 may be less, the most only comprises a part for the reflecting surface of calculating shown in the drawings.
Pupil face 24 is between reflecting mirror M2 and reflecting mirror M3.Pupil face 24 is not necessary to as flat.It can be bending.This
Outward, intermediate image plane is between reflecting mirror M4 and reflecting mirror M5.Intermediate image plane 25 is not necessary to as flat.It can be bending.
Therefore, reflecting mirror M1 to M4 forms Part I mirror system 26.Reflecting mirror M5 and M6 forms Part II mirror system 27.
Part I mirror system 26 is distorting lens, i.e. its shifting ground imaging.Part II mirror system 27 is also distorting lens, i.e.
Its shifting ground imaging.It is however also possible that Part II mirror system 27 can be configured to non-deformed.
At least one in reflecting mirror M1 to M6 is configured to deform imaging optic element.Especially, projection optics system 9
Comprise at least one, the most multiple, especially at least two, especially at least three, especially at least four, the most extremely
Few five, especially at least six, especially at least seven, especially at least eight deformation imaging mirrors.
Therefore, projection optics system 9 has the first imaging scale in a first direction, and has difference in a second direction
The second imaging scale in the first imaging scale.Especially, the second imaging scale is extremely a little less five times of the first imaging scale,
Especially at least twice is big.
Especially, projection optics system 9 is constructed so that the amount of imaging scale in a scanning direction is less than and the direction
The vertical imaging scale on direction.Especially, the amount of imaging scale in a scanning direction is the direction vertical with the direction
On imaging scale at most 3/4ths, especially up to 2/3rds, especially up to half.
Projection optics system 9 has the object-side numerical aperture (NAO) of directional dependence, i.e. entrance pupil and round-shaped deviation.
Especially, at specific direction, i.e. the object-side numerical aperture (NAO) on big imaging scale direction, vertical with the direction
Extremely a little less five times of object-side numerical aperture on direction, especially at least twice.
Reflecting mirror M6 has the through hole 28 passed through for radiation 14.Is another pupil face between reflecting mirror M5 and M6
29.Pupil face 29 is not necessary to as flat.It can be bending.
Reflecting mirror M1 to M6 is configured to reflect EUV-radiation.Especially, they carry multiple reflecting layer, are used for optimizing it
For the reflection of EUV illumination light 14 irradiated.The irradiating angle of the independent light beam in mirror surface is closer to vertically entering
Penetrating, reflection can optimised obtain more preferably.
Reflecting mirror M1 to M5 has reflecting surface, and it is Guan Bi, does not i.e. have through hole.
Reflecting mirror M1, M4 and M6 have recessed reflecting surface.Reflecting mirror M2, M3 and M5 have convex reflecting surface.
The reflecting mirror M1 to M6 of projection optics system 9 is configured to the free shape table that can not be described by rotationally symmetrical function
Face.Other structures of projection optics system 9 are also possible, and wherein at least one of reflecting mirror M1 to M6 has oneself of the type
By shaped reflecting surface.The free shape surface of the type can be manufactured from the rotationally symmetrical plane of reference.From US2007-0058269A1
Know the free shape of the type of the reflecting surface of the reflecting mirror of the projection optics system of the projection exposure system for micro-lithography
Surface.
Mathematically by below equation free shape surface can be described:
Wherein apply:
Z is that free shape surface is at an x, the rise at y, wherein x2+y2=r2。
C is constant, and it corresponds to corresponding aspheric vertex curvature.K corresponds to corresponding aspheric conic constants.CjFor
Monomial xmynCoefficient.Typically, desired optical characteristics based on the reflecting mirror in projection optics system 9, determine c, k and
CjValue.NRadiusIt is coefficient CjNormalization factor.The exponent number m+n of monomial can change on demand.The monomial of higher-order number can
Cause the design with the projection optics system of more preferable image error correction, but calculate more complicated.M+n may select 3 with big
Value between 20.
Free shape surface mathematically can be described by zernike polynomial, such as at optical design procedureHandbook described in.Alternatively, by means of two-dimensional spline curved surface, free shape surface can be described.It shows
Example is Bezier or non-uniform rational B-spline (NURBS).Two-dimensional spline curved surface such as can be by the net of the point in x/y plane
The z value of network and association describes, or by these points and describes about these gradients put.Depend on each class of spline surface
Type, uses multinomial or the function such as about its seriality and differential with special nature, by interleaving at nexus
Value, it is thus achieved that complete surface.The example of function is analytical function.
Below, by summing up the optical design data of projection optics system 9 in table, by means of optical design procedureHave been obtained for described data.
With first optical surface for optical module of following table and sets forth summit song for aperture diaphragm
The reciprocal value (radius) of rate and thickness, this thickness corresponding to adjacent elements from image plane 11 light path (in other words, it is simply that
And light is in opposite direction) on z interval.Second table gives the free shape surface provided above with respect to reflecting mirror M1 to M6
In monomial xmynCoefficient Cj。
In another table, give also the amount in units of mm, each reflecting mirror starts bias from reflecting mirror Reference Design
(Y-is eccentric) and (X-rotation) this amount of rotation.This is corresponding to the translation in the method for designing of free shape surface and inclination.This
In, this displacement betides on y direction, and tilts about x-axis.Here, the anglec of rotation is in units of degree.
| Surface | Radius | Thickness | Mode of operation |
| Image plane | Infinitely great | 852.884 | |
| M6 | -889.919 | -802.884 | Reflection |
| M5 | -219.761 | 1800.787 | Reflection |
| M4 | -999.946 | -434.619 | Reflection |
| M3 | -1033.356 | 483.832 | Reflection |
| M2 | 2464.083 | -947.116 | Reflection |
| M1 | 1323.688 | 1047.116 | Reflection |
| Object plane | Infinitely great | 0.000 |
| Coefficient | M6 | M5 | M4 |
| K | 3.303831E-03 | 2.041437E-02 | -1.056546E-01 |
| Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2 | 1.106645E+00 | 4.620513E+00 | 1.065419E+00 |
| Y2 | 1.316656E+00 | 4.632819E+00 | 2.089523E+00 |
| X2Y | -6.987016E-02 | 6.244905E-02 | 2.322141E-01 |
| Y3 | -1.544816E-01 | -2.303227E-01 | -2.158981E-01 |
| X4 | 3.297744E-02 | 9.371547E-02 | 7.579352E-02 |
| X2Y2 | 6.476911E-02 | 1.671737E-01 | 8.744751E-02 |
| Y4 | 5.431530E-02 | 7.743085E-02 | 2.360575E-01 |
| X4Y | -7.040479E-04 | 4.607809E-03 | 3.961681E-03 |
| X2Y3 | -6.159827E-03 | -1.034287E-02 | 9.782459E-03 |
| Y5 | -4.061987E-03 | -3.840440E-03 | -1.297054E-01 |
| X6 | 1.398226E-03 | 3.085471E-03 | 6.847894E-03 |
| X4Y2 | 2.977799E-03 | 8.906352E-03 | 6.372742E-03 |
| X2Y4 | 4.433992E-03 | 8.678073E-03 | -2.569810E-02 |
| Y6 | 1.255594E-03 | 1.683572E-03 | 9.106731E-02 |
| X6Y | 2.969767E-04 | 1.881484E-04 | 1.342374E-03 |
| X4Y3 | -2.820109E-04 | -1.123168E-03 | -5.896992E-03 |
| X2Y5 | -3.654895E-04 | -5.949903E-04 | 1.660704E-03 |
| Y7 | 8.966891E-05 | -3.952323E-04 | -3.764049E-02 |
| NRadius | 2.899772E+02 | 6.300046E+01 | 2.064580E+02 |
| Coefficient | M3 | M2 | M1 |
| K | 5.744686E-01 | -3.325393E+02 | -1.583030E-02 |
| Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2 | 3.551408E-01 | 3.277030E-01 | -2.811984E-02 |
| Y2 | 2.123536E+00 | 1.609563E+00 | -4.135835E-01 |
| X2Y | 2.013521E-01 | -6.948142E-01 | -3.866470E-02 |
| Y3 | -1.210907E-02 | 3.694447E-01 | -1.853273E-02 |
| X4 | 5.478320E-02 | 1.369729E-01 | 1.349339E-03 |
| X2Y2 | 7.482002E-02 | 1.984843E-01 | 3.032808E-03 |
| Y4 | 8.327949E-02 | -1.227576E-01 | -2.824781E-03 |
| X4Y | -2.048831E-03 | -4.568931E-02 | -4.300195E-04 |
| X2Y3 | -4.029059E-03 | -1.713508E-02 | -6.501645E-04 |
| Y5 | -1.415756E-02 | 6.185385E-03 | 3.144628E-03 |
| X6 | 1.998416E-04 | -1.834856E-02 | 6.906841E-05 |
| X4Y2 | -1.979383E-03 | -3.309794E-02 | 5.274081E-05 |
| X2Y4 | -5.943296E-03 | -5.169942E-02 | -1.330272E-03 |
| Y6 | 1.246118E-03 | -1.603819E-01 | -1.363317E-02 |
| X6Y | 1.584327E-04 | 7.876367E-03 | -2.377257E-05 |
| X4Y3 | -3.187207E-04 | -1.244804E-02 | -2.251271E-04 |
| X2Y5 | -5.566691E-04 | -5.746055E-02 | -9.996573E-04 |
| Y7 | -1.399787E-03 | -3.870909E-02 | 4.001012E-03 |
| NRadius | 8.132829E+01 | 7.472082E+01 | 1.311311E+02 |
| Coefficient | M6 | M5 | M4 | M3 | M2 | M1 | Image plane |
| Y-is eccentric | -51.252 | -99.408 | 123.654 | 215.631 | 528.818 | 512.855 | 0.000 |
| X-rotates | 0.323 | 7.067 | -2.444 | 10.483 | 16.940 | 3.488 | 0.000 |
In y-direction, the most in a scanning direction, projection optics system 9 has covering in the imaging scale of 1:8, i.e. thing field 5
Mould mother matrix 7 is that the octuple of its picture in image field 10 is big in a scanning direction.In the x direction, i.e. it is being perpendicular to scanning direction
On direction, projection optics system 9 has the imaging scale of 1:4.Therefore, projection optics system 9 has and reduces effect.Projection optics
The image-side numerical aperture of system 9 is 0.5.The image-side numerical aperture of projection optics system 9 especially at least 0.4.Image field 10 has
The size of 2mmx26mm, wherein 2mm is in a scanning direction, and 26mm is in the direction perpendicular to the scan direction.Especially, sweeping
Retouching on direction, image field 10 also can be of different sizes.The size of image field 10 is at least 1mm x10mm.It is perpendicular to scanning direction,
Image field 10 especially has the width more than 13mm.Especially, image field 10 is rectangle.Especially, projection optics system 9 has at least
The image space scanning seam width of 13mm, especially greater than 13mm, especially at least 26mm.For field central point, projection optics system 9
There is thing side's main beam angle of 6 °.Especially, the thing side's main beam angle for field central point is at most 7 °.This projection optics
System has the optics total length of 2000mm.
Thing field 5 in this embodiment has the size of 16mmx104mm.In this case, 16mm in a scanning direction, and
104mm is in the direction perpendicular to the scan direction.
Reticle 7 also adapts to different imaging scale on scanning direction and perpendicular direction.It has this
The structure of sample, this structure in a scanning direction with there is on the direction vertical from the direction different minimum compact mechanisms.Special
Not, the structure on reticle 7 in a scanning direction with can have on the direction vertical with the direction be respectively these
The size of the integral multiple of little physical dimension.In a scanning direction with the minimum compact mechanism on the direction vertical with the direction
Ratio is just inversely proportional with the ratio of imaging scale in those directions.Especially, in a scanning direction and with the party
Minimum compact mechanism the most different at least 10% on vertical direction, especially at least 20%, especially at least 50%.
Reticle 7 has the width of at least 104mm on the direction vertical with scanning direction.Especially, reticle 7
There is length in a scanning direction that adapt to bigger minification.Especially, reticle 7 has width and the 264mm of 104mm
Length.Especially, the length of reticle is more than 132mm.Its especially at least 140mm, especially at least 165mm, especially
It is at least 198mm.
Figure 4 and 5 show and can be used for projecting another structure in exposure system 1, projection optics system 9.With join above
Examine the corresponding assembly of the assembly described by Fig. 2 and 3 and there is identical reference number, and be no longer discussed in detail.
Reflecting mirror M3 does not have through hole in optics uses region.But, the mechanical realization of optional reflecting mirror M3 so that
The light reflecting mirror perforate by the mirror body of the unibody construction of M3 of reflecting mirror M5 is propagated to from reflecting mirror M4.
Reflecting mirror M1, M3, M4 and M6 have recessed reflecting surface.Reflecting mirror M2 and M5 has convex reflecting surface.
In this embodiment, the light path between reflecting mirror M2 and M3 is intersected with the light path between reflecting mirror M4 and M5.
In this embodiment, in a scanning direction, relative to image field 10, reflecting mirror M5 is arranged in identical with thing field 5
On side.
With in following table, the optical design data of projection optics system 9 that will sum up successively according to Figure 4 and 5.Free shape
The mathematical description on surface corresponds to those having been described above above with reference to the structure according to Fig. 2 and 3.About according to Figure 4 and 5
The structure of the table of structure also corresponds to the structure of the table about the structure according to Fig. 2 and 3.
| Surface | Radius | Thickness | Mode of operation |
| Image plane | Infinitely great | 689.272 | |
| M6 | -731.552 | -639.272 | Reflection |
| M5 | -241.671 | 1420.179 | Reflection |
| M4 | -1500.000 | -580.907 | Reflection |
| M3 | 1422.356 | 1010.728 | Reflection |
| M2 | 661.083 | -1110.728 | Reflection |
| M1 | 1384.311 | 1210.728 | Reflection |
| Object plane | Infinitely great | 0.000 |
| Coefficient | M6 | M5 | M4 |
| K | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2 | 1.697113E+00 | 4.496118E+00 | 1.030719E+01 |
| Y2 | 1.683950E+00 | 4.083378E+00 | 1.147196E+01 |
| X2Y | 1.755515E-01 | -3.170399E-01 | -1.434807E+00 |
| Y3 | 2.279761E-02 | 9.028788E-02 | 1.085004E+00 |
| X4 | 5.443962E-02 | 4.335109E-02 | 2.308628E-01 |
| X2Y2 | 1.503579E-01 | 8.531612E-02 | 7.598943E-01 |
| Y4 | 5.203904E-02 | 6.130679E-02 | 2.980202E-01 |
| X4Y | 5.039890E-03 | -1.771794E-02 | -8.711086E-03 |
| X2Y3 | 8.907227E-03 | -1.404665E-02 | 8.302498E-04 |
| Y5 | 5.015844E-03 | 8.045746E-03 | 4.101109E-02 |
| NRadius | 2.899772E+02 | 6.300046E+01 | 2.064580E+02 |
| Coefficient | M3 | M2 | M1 |
| K | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2 | -4.645076E-01 | -5.243755E-01 | -3.303400E-01 |
| Y2 | -2.057326E-01 | -2.274245E-02 | -7.527525E-01 |
| X2Y | -3.583366E-02 | 1.523089E+00 | -2.593623E-03 |
| Y3 | 3.371920E-02 | -2.167244E+00 | -3.182409E-02 |
| X4 | 9.534050E-05 | 7.127442E-02 | -8.002659E-04 |
| X2Y2 | 4.301563E-03 | -3.064519E-01 | -5.376311E-03 |
| Y4 | -9.145920E-04 | 7.458445E-01 | -7.154305E-03 |
| X4Y | 9.453851E-05 | 1.770844E-01 | -2.938545E-04 |
| X2Y3 | -2.757417E-04 | 2.079536E-01 | 2.101675E-03 |
| Y5 | 4.683904E-05 | -1.544216E-01 | 6.098608E-04 |
| NRadius | 8.132829E+01 | 7.472082E+01 | 1.311311E+02 |
| Coefficient | M6 | M5 | M4 | M3 | M2 | M1 | Image plane |
| Y-is eccentric | 0.000 | 99.374 | -121.476 | -185.579 | 311.769 | 482.388 | 0.000 |
| X-rotates | -4.418 | -8.837 | -1.271 | 16.249 | 8.734 | -1.361 | 0.000 |
Fig. 6 and 7 shows the other design of projection optics system 9, and it can be used for projecting in exposure system 1.With above
The corresponding assembly of assembly having been described above with reference to Fig. 2 and 3 has identical reference number, and is no longer discussed in detail.
Projection optics system 9 according to Fig. 6 and 7 has six reflecting mirror M1 to M6 altogether, and it is in the light path from thing field 5
Direction on by the most numbered M1 to M6.Projection optics system 9 according to Fig. 6 and 7 has the optics total length of 1865mm.
Reflecting mirror M1, M4 and M6 have recessed reflecting surface.Reflecting mirror M5 has convex reflecting surface.Reflecting mirror M2 and M3 exists
It is convex on one direction, and about being recessed on the orthogonal direction of the direction, that is it has at the central point of reflecting mirror
The shape in saddle (saddle) face.
Additionally, in this embodiment, on the scanning direction about image field 10, the side identical with thing field 5 is arranged
Reflecting mirror M5.
With in following table, the optical design data of projection optics system 9 that will illustrate successively according to Fig. 6 and 7.Free shape table
The mathematical description in face corresponds to those having been described above above with reference to the structure according to Fig. 2 and 3.About the structure according to Fig. 6 and 7
The structure of the table made also corresponds to the structure of the table about the structure according to Fig. 2 and 3.
| Surface | Radius | Thickness | Mode of operation |
| Image plane | Infinitely great | 752.663 | |
| M6 | -770.716 | -702.663 | Reflection |
| M5 | -150.912 | 1382.613 | Reflection |
| M4 | -996.191 | -579.950 | Reflection |
| M3 | -3722.693 | 805.250 | Reflection |
| M2 | -19143.068 | -805.250 | Reflection |
| M1 | 1526.626 | 1011.848 | Reflection |
| Object plane | Infinitely great | 0.000 |
| Coefficient | M6 | M5 | M4 |
| K | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2 | 1.014388E+00 | 5.967807E+00 | 1.640439E+00 |
| Y2 | 9.176806E-01 | 5.297172E+00 | 1.185698E+01 |
| X2Y | 2.666213E-02 | -2.932506E-02 | -5.795084E-01 |
| Y3 | 1.276213E-02 | -1.747940E-01 | 2.665088E-01 |
| X4 | 3.194237E-02 | 1.741906E-01 | 4.142971E-02 |
| X2Y2 | 5.891573E-02 | 4.136465E-01 | -2.431409E-02 |
| Y4 | 2.892148E-02 | 1.408837E-01 | 8.604418E-01 |
| X4Y | 5.053354E-04 | 8.947414E-03 | 1.339774E-03 |
| X2Y3 | 3.013407E-03 | 4.414092E-02 | -2.210148E-02 |
| Y5 | 2.088577E-03 | 3.281648E-02 | -1.242199E+00 |
| NRadius | 2.899772E+02 | 6.300046E+01 | 2.064580E+02 |
| Coefficient | M3 | M2 | M1 |
| K | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2 | -3.018727E+00 | -4.089101E-01 | -1.333076E-01 |
| Y2 | 2.571222E+00 | 3.746969E+00 | 8.408741E-01 |
| X2Y | -2.111739E-01 | -1.877269E-01 | 3.355099E-02 |
| Y3 | -1.035192E-03 | -1.810657E-01 | -3.518765E-03 |
| X4 | -9.587021E-05 | -1.882449E-03 | 2.861048E-03 |
| X2Y2 | -2.154549E-02 | 8.492037E-02 | 3.127905E-02 |
| Y4 | 1.331548E-02 | -4.386749E-01 | 7.200871E-03 |
| X4Y | 3.718201E-03 | -6.344503E-03 | -2.655046E-04 |
| X2Y3 | 4.305507E-03 | -1.265202E-01 | -6.358900E-03 |
| Y5 | -5.587835E-03 | -6.311675E-01 | -1.276179E-02 |
| NRadius | 8.132829E+01 | 7.472082E+01 | 1.311311E+02 |
| Coefficient | M6 | M5 | M4 | M3 | M2 | M1 | Image plane |
| Y-is eccentric | -11.861 | 78.940 | -76.134 | 224.849 | 34.161 | 393.420 | 0.000 |
| X-rotates | -4.070 | -6.401 | -16.914 | -20.375 | -18.683 | -9.044 | 0.000 |
Fig. 8 and 9 shows another structure of projection optics system 9, and it can be used for projecting in exposure system 1.With join above
The corresponding assembly of assembly examining Fig. 2 and 3 and have been described above has identical reference number, and is no longer discussed in detail.
Projection optics system 9 according to Fig. 8 and 9 has eight reflecting mirror M1 to M8.Reflecting mirror M1 to M6 forms first
Divide mirror system 26.Reflecting mirror M7 and M8 forms Part II mirror system 27.Reflecting mirror M8 optics use in region have for
Irradiate the through hole 28 that light passes through.Reflecting mirror M1 to M7 has the reflecting surface of Guan Bi, that is does not has through hole in optics uses region.
Therefore, a reflecting mirror in optics uses region with through hole 28 is just comprised according to the projection optics system 9 of Fig. 8 and 9.
Significantly, it is possible to construct the projection optics system 9 with eight reflecting mirror M1 to M8, the most more than one reflecting mirror makes at optics
With region has through hole.
Pupil face 24 is located in the light path between reflecting mirror M3 and M5.Pupil face 29 is between reflecting mirror M7 and M8.According to
The projection optics system 9 of Fig. 8 and 9 also has two part mirror systems 26,27.Projection optics system 9 just produces a centre
Picture, it is geometrically positioned in the via regions of reflecting mirror M8.
Reflecting mirror M1, M2, M6 and M8 have recessed reflecting surface.Reflecting mirror M7 has convex reflecting surface.
Projection optics system according to Fig. 8 and 9 has the image-side numerical aperture of 0.65.As example above, below,
The optical design data of projection optics system 9 according to Fig. 8 and 9 are summed up in table.
| Surface | Radius | Thickness | Mode of operation |
| Image plane | Infinitely great | 845.498 | |
| M8 | -876.024 | -795.498 | Reflection |
| M7 | -180.463 | 1850.000 | Reflection |
| M6 | -1124.587 | -954.502 | Reflection |
| M5 | -488.461 | 539.347 | Reflection |
| M4 | -385.935 | -268.946 | Reflection |
| M3 | -899.608 | 563.864 | Reflection |
| M2 | -1862.135 | -962.532 | Reflection |
| M1 | -5181.887 | 1182.769 | Reflection |
| Object plane | Infinitely great | 0.000 |
| Coefficient | M8 | M7 | M6 | M5 |
| K | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2 | 3.488069E+00 | 1.173931E+01 | 2.308119E+01 | 1.973785E+01 |
| Y2 | 2.635738E+00 | 1.010579E+01 | 9.438034E+00 | 5.768532E+00 |
| X2Y | -3.059528E-01 | -2.733318E-01 | -2.266607E+00 | -2.615013E+00 |
| Y3 | 4.818868E-03 | 6.423471E-01 | 4.511519E-01 | 3.223897E+00 |
| X4 | 1.179868E-01 | 5.618198E-01 | 1.276169E+00 | 3.423570E-01 |
| X2Y2 | 3.744431E-01 | 9.722072E-01 | 1.994073E+00 | 1.253707E+00 |
| Y4 | 1.874806E-01 | 5.624878E-01 | 9.258956E-01 | 1.143661E+00 |
| X4Y | 4.142568E-03 | 7.747318E-03 | -2.207925E-01 | 2.696457E-02 |
| X2Y3 | -2.457062E-02 | 2.657340E-02 | -4.677376E-02 | 1.053608E-01 |
| Y5 | -1.021381E-02 | -2.031996E-02 | 3.450492E-01 | 1.716687E+00 |
| X6 | 1.995975E-02 | 5.531407E-02 | 1.199126E-01 | 1.472679E-02 |
| X4Y2 | 4.538384E-02 | 1.603998E-01 | 2.637967E-01 | 4.745154E-02 |
| X2Y4 | 5.093101E-02 | 1.653739E-01 | 3.269947E-01 | 4.959237E-01 |
| Y6 | 1.573648E-02 | 6.733509E-02 | -1.107783E-01 | -1.594589E+00 |
| X6Y | -4.813461E-03 | 1.089425E-03 | -8.010947E-02 | -1.168696E-04 |
| X4Y3 | -6.317680E-03 | -3.797390E-03 | -4.398398E-03 | 1.681727E-02 |
| X2Y5 | -4.665516E-03 | -6.378254E-03 | 1.634222E-02 | -8.741752E-01 |
| Y7 | -1.452902E-03 | 1.323361E-03 | -8.378471E-01 | -2.083305E-01 |
| X8 | 2.243101E-03 | 8.933777E-03 | -9.452801E-03 | 8.039655E-04 |
| X6Y2 | 1.043837E-02 | 3.095089E-02 | 9.332196E-02 | 5.834641E-03 |
| X4Y4 | 1.610588E-02 | 4.686597E-02 | 1.032458E-01 | -1.262475E-01 |
| X2Y6 | 1.112924E-02 | 3.372176E-02 | -1.634446E-01 | -2.791598E-01 |
| Y8 | 2.847098E-03 | 9.333073E-03 | -6.596064E-01 | 3.828685E-01 |
| X8Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X6Y3 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X4Y5 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2Y7 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y9 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X10 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X8Y2 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X6Y4 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X4Y6 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2Y8 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y10 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| NRadius | 4.270420E+02 | 8.460702E+01 | 3.587547E+02 | 1.359154E+02 |
| Coefficient | M4 | M3 | M2 | M1 |
| K | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2 | 7.762408E+00 | 0.000000E+00 | 0.000000E+00 | 2.415351E+01 |
| Y2 | 5.991623E+00 | 2.100665E+01 | 1.742497E+01 | 2.450758E+01 |
| X2Y | -9.407982E-01 | -1.845560E+01 | 0.000000E+00 | 2.857360E+00 |
| Y3 | 7.990315E-02 | 1.826735E+00 | 0.000000E+00 | -8.203766E-01 |
| X4 | 2.084759E-01 | 0.000000E+00 | 0.000000E+00 | -1.195250E-01 |
| X2Y2 | 2.343824E-01 | 0.000000E+00 | 0.000000E+00 | 9.400506E-02 |
| Y4 | 6.849174E-02 | 0.000000E+00 | 0.000000E+00 | 1.027239E-01 |
| X4Y | -3.590847E-02 | 0.000000E+00 | 0.000000E+00 | 5.178501E-02 |
| X2Y3 | -1.676285E-02 | 0.000000E+00 | 0.000000E+00 | 5.698284E-02 |
| Y5 | 1.244977E-03 | 0.000000E+00 | 0.000000E+00 | 2.110062E-01 |
| X6 | 7.609826E-04 | 0.000000E+00 | 0.000000E+00 | 1.852743E-03 |
| X4Y2 | 1.642005E-02 | 0.000000E+00 | 0.000000E+00 | -5.347458E-02 |
| X2Y4 | 6.253616E-03 | 0.000000E+00 | 0.000000E+00 | -2.587706E-01 |
| Y6 | 1.353703E-03 | 0.000000E+00 | 0.000000E+00 | 1.608009E-01 |
| X6Y | -2.568254E-03 | 0.000000E+00 | 0.000000E+00 | 5.587846E-04 |
| X4Y3 | -4.755388E-03 | 0.000000E+00 | 0.000000E+00 | 5.397733E-02 |
| X2Y5 | -6.793506E-04 | 0.000000E+00 | 0.000000E+00 | -2.400347E-01 |
| Y7 | -1.374859E-05 | 0.000000E+00 | 0.000000E+00 | 2.641466E-01 |
| X8 | 2.488086E-04 | 0.000000E+00 | 0.000000E+00 | 5.593305E-04 |
| X6Y2 | 1.255585E-03 | 0.000000E+00 | 0.000000E+00 | 6.244473E-03 |
| X4Y4 | 1.194473E-03 | 0.000000E+00 | 0.000000E+00 | 1.145315E-01 |
| X2Y6 | 3.001214E-04 | 0.000000E+00 | 0.000000E+00 | 8.712058E-02 |
| Y8 | 5.813757E-05 | 0.000000E+00 | 0.000000E+00 | 6.570255E-01 |
| X8Y | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X6Y3 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X4Y5 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2Y7 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y9 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X10 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X8Y2 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X6Y4 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X4Y6 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| X2Y8 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| Y10 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 | 0.000000E+00 |
| NRadius | 7.497396E+01 | 2.029987E+02 | 2.738127E+02 | 2.966746E+02 |
| Coefficient | M8 | M7 | M6 | M5 | M4 |
| Y-is eccentric | 0.000 | -116.456 | 154.238 | 192.354 | 412.808 |
| X-rotates | 4.164 | 8.327 | 3.019 | 9.973 | -2.768 |
| Coefficient | M3 | M2 | M1 | Image plane |
| Y-is eccentric | 554.416 | 783.491 | 867.803 | 0.000 |
| X-rotates | -2.829 | 8.552 | 0.503 | 0.000 |
Such as seen from the description of embodiment above, projection optics system 9 is configured such that it is put down two masters
Face (principal plane) has intermediary image.
Such as seen from description the preceding embodiment, projection optics system 9, especially two part mirror systems 26,
27 imaging scale on two principal plane directions are respectively provided with identical symbol.Especially, both of which has positive sign.Cause
This will not occur as upset.
In order to manufacture micro-structural or nano-structured assembly, projection exposure system 1 used as described below: first, it is provided that cover
Mould mother matrix 7 and wafer 12.Then, by means of projection exposure system 1, by the light of the arrangement projects on reticle 7 to wafer 12
In photosensitive layer.Then pass through development photosensitive layer, and on wafer 12, produce micro structure and nanostructured, and therefore manufacture micro-knot
Structure assembly, the such as semiconductor subassembly of high density integrated circuit having form.
During the exposure of the photosensitive layer on wafer 12, by means of wafer holders 13, displacement wafer in a scanning direction.
In this case, especially, about reticle 7 displacement in a scanning direction by reticle keeper 8, synchronously
Carry out the displacement of wafer.Projection optics system 9 imaging scale reduced in a scanning direction can be mended by higher scanning speed
Repay.
Claims (14)
1. the imaging optical system (9) being used for projecting exposure system (1), it has:
-at least one be deformed into as projectoscope system (26,27), it is arranged in the reticle plane of described projection exposure system
And in the physical space between wafer plane,
-wherein said at least one be deformed into as projectoscope system (26,27) there is symbol in the first direction and a second direction
Identical imaging scale,
Wherein said at least one be deformed into as projectoscope system (26,27) include at least four reflecting mirror, described image optics
The object-side numerical aperture (NAO) of system (9) is directional dependence.
Imaging optical system the most according to claim 1 (9), it is characterised in that described at least one be deformed into as projection
Mirror system has at least two part mirror system (26,27), at least one shifting ground in described at least two part mirror system
Imaging.
Imaging optical system the most according to claim 1 and 2 (9), it is characterised in that circular emergent pupil.
Imaging optical system the most according to claim 1 and 2 (9), it is characterised in that described at least four reflecting mirror is extremely
Few one has free shape surface.
Imaging optical system the most according to claim 1 and 2 (9), it is characterised in that the first imaging ratio on first direction
The second imaging scale in example and second direction, described second imaging scale is at least the half as much again of described first imaging scale
Greatly.
Imaging optical system the most according to claim 1 and 2 (9), it is characterised in that
The image-side numerical aperture of-at least 0.4,
Thing side's main beam angle of-central point is less than 7 °, and
-image field (10), it has the width more than 13mm on the direction vertical with scanning direction.
7. an optical system, has
-according to the imaging optical system (9) according to any one of claim 1,2,4 to 6, and
-lamp optical system (4), its radiation (14) for autoradiolysis source (3) in the future is transmitted to thing field (5).
Optical system the most according to claim 7, wherein said lamp optical system (4) comprises:
-at least one pupil facet reflecting mirror (18),
-it is characterized in that, oval emergent pupil, the half shaft length of this emergent pupil differs at least 10% each other.
Optical system the most according to claim 8, it is characterised in that described pupil facet reflecting mirror (18) is oval, and
And there is the half shaft length differing at least 10% each other.
10. projection exposure system (1), has
-optical system according to claim 9, and
-radiation source (3).
11. projection exposure systems (1) according to claim 10, having can the reticle of displacement in a scanning direction
Keeper, to keep reticle (7), it is characterised in that imaging optical system (9) imaging scale in a scanning direction is less than
Imaging scale direction on vertical with scanning direction.
12. 1 kinds of reticle (7), it is for according to the projection exposure system described in any one in claim 10 or 11,
There is the width of at least 104mm and the length more than 132mm.
13. 1 kinds are used for the method manufacturing the assembly of micro-structural, and it has steps of:
-reticle (7) is provided and there is the wafer (12) of radiation-sensitive layer,
-by means of according to the projection exposure system (1) described in claim 10 or 11, by the arrangement projects on reticle (7)
Radiation-sensitive layer to wafer (12).
14. assemblies manufactured by method according to claim 13.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611027506.7A CN106873135B (en) | 2010-09-15 | 2011-09-13 | Imaging optical system |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US38307910P | 2010-09-15 | 2010-09-15 | |
| DE102010040811.5 | 2010-09-15 | ||
| DE102010040811A DE102010040811A1 (en) | 2010-09-15 | 2010-09-15 | Imaging optics |
| US61/383,079 | 2010-09-15 | ||
| PCT/EP2011/065823 WO2012034995A2 (en) | 2010-09-15 | 2011-09-13 | Imaging optical system |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611027506.7A Division CN106873135B (en) | 2010-09-15 | 2011-09-13 | Imaging optical system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103109225A CN103109225A (en) | 2013-05-15 |
| CN103109225B true CN103109225B (en) | 2016-12-14 |
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