CN103095361B - Time division duplex tower mounted amplifier for base station receiving and sending table - Google Patents
Time division duplex tower mounted amplifier for base station receiving and sending table Download PDFInfo
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- CN103095361B CN103095361B CN201210360862.6A CN201210360862A CN103095361B CN 103095361 B CN103095361 B CN 103095361B CN 201210360862 A CN201210360862 A CN 201210360862A CN 103095361 B CN103095361 B CN 103095361B
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Abstract
A time division duplex tower mounted amplifier (TDD-TMA) used for a base station transceiver station comprises a TX line. The TX line comprises the following components: a first circulator which is connected with a PTS port, a second circulation which is connected with an antenna, and a TX switch which is provided between the first circulator and the second circulator. The TDD-TMA comprises a RX branch line which is connected with the TX line. The RX branch line comprises the following components: a switchable bypass line which is connected with a switchable gain line in parallel, and the gain line which comprises a low-noise amplifier (LNA). A RX branch line protection switch is equipped between the TX line and the RX line. When the amplifier is in the TX mode, the RX branch line protection switch protects the LNA. Supply of TX power to the RX branch line is stopped and the TX power dissipates at a resistor load. The RX branch line can be switched between a gain mode and a bypass mode.
Description
Technical field
This patent disclosure relates generally to it is used for the base transceiver station (BTS) of radio communication, and more particularly, to base station transceiver
Time division duplex (TDD) amplifier apparatus of platform.
Background technology
In cellular mobile telephone radio system, mobile station (MS), also referred herein to radio communication device or mobile device,
Due to the high power of the signal that base station sends, mobile base station can be correctly detected the sending signal of BTS.However, because moving
The limited transmission power of dynamic device, the signal of the mobile device received by BTS receivers is much lower.When mobile device away from
BTS towers or have object hinder communication when, this becomes more problematic.Except the low-level of the mobile device signal of reception, in BTS
The noise for increasing further is degrading the signal of mobile device.This is caused by the long cable between antenna and BTS cabinets.This enters
One step reduces the level of the signal of the mobile device for receiving, but if more unlike the noise that antenna is received, by BTS
The noise level for receiving is remained in that as former state.This cause signal to noise ratio (SNR) in BTS receivers than BTS antenna or it is whole on
It is worse in the strong noise coefficient of row of channels.Therefore, mobile communication passage is up limited.
The effective solution for improving uplink receiving is to increase a low-noise amplifier (LNA), commonly referred to as up
Tower amplifier (tower mounted amplifier, TMA) in passage, tower amplifier (masthead
Amplifier, MHA) or tower amplifier (tower topamplifier, TTA).The device should close antenna and be located at length
The front end of tower cable.By this way, due to caused by cable the loss of signal can be compensated.Additionally, the noise coefficient of system
It is to be determined by the noise coefficient of TMA, rather than determined by cable loss, the noise coefficient very low (being less than 2dB) of TMA.
By this way, the minimum signal level that BTS receivers are able to detect that reduces, and it is converted into the system sensitivity of raising, increases
The MS battery power consumptions of strong sound quality, the call drop of reduction and reduction.The sensitivity of raising increased communication coverage, as a result
Increase capacity.Further, it reduces the quantity of the BTS towers of designated area, and this is one for service provider
Big cost cutting.In addition, the reduction of MS power extends MS service time of batteries, the manufacturing cost of MS is reduced, reduced
The MS of adjacent cell is disturbed, and reduces worry of the user to the health problem of MS power consumptions.
In a wireless communication system, the mode of mobile device and BTS usage frequencies or time resource divides such system
For two classifications substantially：FDD (FDD) and time division duplex (TDD).In FDD system, MS and BTS signals are with difference
Frequency band sent.In a tdd system, MS and BTS are using identical frequency band but they send at various time intervals letter
Number.Existing various FDD-TMA on market, but TDD-TMA is a kind of new TMA.Applicant have observed that belonging to radio frequency system
One patent application (U.S. Patent application 2011/0032854, be hereby incorporated by reference) of system (RFS) discloses one kind
The design of TDD-TMA.
TDD-TMA is used to TDD system such as TDD-LTE or WiMax (TM) improve upstream performance.Fig. 1 shows
The block diagram of TDD-LTE TMA, because BTS antennas are paired, TDD-LTE TMA typically have two TMA in a bag.
In FDD-TMA, transmitter (TX) signal and receiver (RX) signal be over different frequency bands, but in TDD-TMA, TX letters
Number and RX signals be all same frequency band but in different time interval or time slot.In fact, in a tdd system, at certain
One moment, only TX or RX is activation.When TX is activation, TMA is in TX patterns, when RX is activation, at TMA
In RX patterns.In FDD-TMA, we separate TX signals and RX signals using wave filter.However, in TDD-LTE system,
We separate TX signals and RX signals using TX/RX switches and circulator.(circulator is a kind of passive three ports or four
The device of individual port, it receives microwave in a port, and by the Microwave emission of rotation to next port, that is, it can lead
Cause the plane of polarization of microwave from a port to next port can not reverse rotation).TMA is double TMA, by antennal interface standard group
Knit (AISG) agreement or arbitrary other this class standard controls for reaching the signal of the ports of BTS 1.All these ports all allusion quotations
Type ground has lightning protection circuit.The control section of TMA is different from FDD-TMA in TX/RX switching circuits, control and synchronization.
As shown in the example of figure 1, according to the demand of mask (spuriousmask), the bandpass filter (BPF) of antenna port is can
Selectively use.It is disclosed that the technology for improving and circuit of the TDD-TMA for improving base station performance.
The content of the invention
On the whole, the present invention provide in TDD-TMA protect LNA protect against TX power for TX/RX switch
A kind of circuit design and technology of innovation.
Therefore, an aspect of of the present present invention is the TDD-TMA for base transceiver station.The amplifier includes LNA and TX/RX
Switching circuit, the TX/RX switching circuits include：It is connected to the first circulator of BTS ports；It is connected to the second circulation device of antenna；
TX switches between first and second circulator；And the RX between the second circulation device and the LNA
Branch protection is switched, for protecting the LNA when the amplifier is in TX patterns.
Another aspect of the present invention is the TDD-TMA for BTS.The amplifier includes TX circuits, the TX circuits bag
Include be connected to BTS ports first circulator, be connected to antenna second circulation device and positioned at first and second circulator it
Between TX switch；The amplifier include RX branch roads, the RX branch roads and the TX lines in parallel, the RX branch roads include with can
The switchable by-pass line of the gain lines in parallel of switching, the gain circuit includes low-noise amplifier (LNA)；It is described to put
Big device is switched including RX branch protections, between the TX circuits and the RX branch roads, when the amplifier is in TX patterns
When, LNA described in the RX branch protections switch protection.
Another aspect of the present invention is a kind of BTS, and the BTS includes：Antenna；Connect the time division duplex tower top of the antenna
Amplifier (TDD-TMA)；And the BTS transceivers being connected with the TDD-TMA by the communications cable；The TDD-TMA includes：
TX circuits, including the first circulator for being connected to BTS ports, the second circulation device for being connected to antenna and positioned at described first and second
TX switches between circulator；RX branch roads, with the TX lines in parallel, the RX branch roads include the bypass with gain lines in parallel
Circuit, the gain circuit includes the gain circuit of low-noise amplifier (LNA)；And RX branch protections switch, positioned at described
Between TX circuits and the RX branch roads, when the amplifier is in TX patterns, described in the RX branch protections switch protection
LNA。
Another aspect of the present invention be it is a kind of for by TDD-TMA from RX pattern switchings to the method for TX patterns, the side
Method includes：The increase of TX power in TX circuits of the detection with first circulator and second circulation device；By connecting gain line
Road each end ground connection a pair of switches each, isolate with the gain circuit of the RX branch roads of the TX lines in parallel in
Low-noise amplifier (LNA)；Disconnect the RX branch protections switch for being grounded the second circulation device；And the disconnection TX lines
TX switches in road so that TX power from the first circulator by the second circulation device to the antenna, described in traversal
TX circuits.
Another aspect of the present invention be it is a kind of for by time division duplex tower amplifier from TX pattern switchings to RX patterns
Method, methods described includes：The reduction of TX power in TX circuits of the detection with first circulator and second circulation device；Connect institute
State the TX switches in TX circuits；Disconnect in a pair of switches of each end ground connection of the gain circuit comprising low-noise amplifier
Each；And connect the RX branch protections switch of second circulation device ground connection.
Description below is related to the other side of the invention of accompanying drawing.
Description of the drawings
Further characteristic of the invention and advantage will become bright in the detailed description below carrying out in conjunction with the following drawings
It is aobvious, wherein：
Fig. 1 is the TDD-LTE TMA block diagrams for realizing double TMA designs；
Fig. 2 a are comprising the improved TDD- for each in two new TX/RX switches and the circuit diagram of circulator
LTE TMA block diagrams；
Fig. 2 b are the simplification of the improved TDD-LTE TMA comprising the circuit diagram for new TX/RX switches and circulator
Block diagram；
Fig. 3 is the schematic diagram for illustrating the on off state of each of four switches when running in different modes；
Fig. 4 is the flow chart of the step of describing from RX pattern switchings to TX patterns；
Fig. 5 is the flow chart of the step of describing from TX pattern switchings to RX patterns；
Fig. 6 a are the circuit diagrams of the first example of a kind of new RF partial-topologies of the circuit for being merged into Fig. 2 a and 2b；
Fig. 6 b are the circuit diagrams of the second example of a kind of new RF partial-topologies of the circuit for being merged into Fig. 2 a and 2b；
Fig. 6 c are the circuit diagrams of the 3rd example of a kind of new RF partial-topologies of the circuit for being merged into Fig. 2 a and 2b；
Fig. 7 is the schematic diagram description of the base transceiver station comprising TDD TMA according to embodiments of the present invention；
Fig. 8 is the prior art for forbidding fl transmission path disclosed in US2011/0032854 in time interval is received
Circuit diagram.
It is noted that the feature being similar in whole accompanying drawing is marked with similar label.
Specific embodiment
Fig. 2 a show the block diagram of the simplification of TMA.There are two TMA units in a bag (package).Two TMA are
Control signal and direct current (DC) are received from the input of BTS1.However, DC and control signal can be in two ports arbitrarily
One or two port.There is lightning protection circuit (LPC) BTS and ANT ports.The control circuit of TMA10 and LNA12 similar to
FDD-TMA.New TX/RX handoff techniques are realized by increasing new control circuit.
In fig. 2 a, it is shown by way of example, the online RF power of directional coupler 30 and detector monitors.Based on detection
The power consumption for arriving, whether TMA10 is it will be appreciated that there is TX power online.If having carried out TX power, TMA10 closes SWTX, allow TX power to pass through
TMA.TMA is by opening SWRX1And SWRX2Switch, close SWRX3To protect LNA.If without online TX power, it is opened
SWTXAnd SWRX3But, close SWRX1And SWRX2.Switch SWRX3Can be single-pole double throw (SPDT) switch, on it connects
During load, it can be defined as what is disconnected.When it connects upper RX branch roads, it can be defined as what is connected.When it switches
When disconnecting, it protects RX branch roads.
In an embodiment of the present invention, TX/RX is for example switched over per 1 millisecond (ms).Switching complete soon (μ s of ＜ 2) it is non-
It is often important.Therefore, control signal is produced by processor, but is supplied directly to out using door and switch driver
Close.When TMA receives D/C power, SWBPSwitch is all connected, and when not having power supply, they all disconnect.
Fig. 3 shows the state of TMA patterns and each switch.As illustrated in the drawing, TMA may be at gain mode or
Bypass mode.Under gain mode, TMA may be at TX patterns or RX patterns.Similarly, in bypass mode, TMA can locate
In TX patterns or RX patterns.
Fig. 4 shows ought be from RX pattern switchings to TX patterns, the order of activate switch.Importantly, RX switches are opened in TX
Shut-off is disconnected before opening, with the high TX power for protecting LNA to exempt from.As shown in figure 4, from RX pattern switchings to the method for TX patterns
Including：Step 100, the increase of the TX power in TX circuits of the detection with first circulator and second circulation device, step 102,
By the way that every one end of connection gain circuit is opened and by disconnecting second circulation device to each in a pair of switches on ground
Low-noise amplifier (LNA) in the gain circuit of the RX branch roads of the RX branch protections switch of ground connection, isolation and TX lines in parallel,
Step 104, verifies the state of switch, and step 106, the TX disconnected in TX circuits is switched so that TX power can be from first circulation
Device travels through the TX circuits by the second circulation device to antenna.
Fig. 5 shows ought be from TX pattern switchings to RX patterns, the order of activate switch.Importantly, TX switches are opened in RX
Shut-off is switched on before opening, and high TX power is exempted to LNA to protect.As shown in figure 5, by time division duplex tower amplifier from TX moulds
Formula is switched to the method for RX patterns to be included：Step 110, the TX in TX circuits of the detection with first circulator and second circulation device
The decline of power, step 112, the TX switches connected in TX circuits, step 114 verifies the state of switch, and step 116, disconnection will
Gain circuit comprising low-noise amplifier each end ground connection one group of switch each, and connect second circulation device is connect
The RX branch protections switch on ground.
Embodiments in accordance with the present invention, there is provided the RF parts of TMA systems or the new design of circuit 10, in TX and RX
Switching and the LNA12 for protection used in TMA between pattern.Hereinafter, circuit 10 refers to TMA for letter.In Fig. 2 a and Fig. 2 b
In the square frame of new RF parts grey project.In Fig. 2 a and Fig. 2 b, an enforcement of this new RF parts is described
Example.However, the RF parts at least can be designed with Fig. 6 a, 6b with the three of 6c examples different modes.Fig. 6 a show with
The similar circuit design example of circuit design in Fig. 2 a with 2b.It is illustrated by way of example, the TX switches in Fig. 6 a use single PIN
Diode is realized.
Using the SPDT switch and its method for designing of matching
The SW at node L in Fig. 2RX3It is shown as being switched using single-pole double throw (SPDT).The switch is used to protect LNA to exempt from
By TX power.When TMA is in TX patterns, this is switched off (or PIN diode D6 is connected).In this case, any TX work(
Rate is prevented from through RX branch roads but dissipates in load.
Another new aspect of the design is the mode that RX branch roads are isolated from TX power.In order to isolate RX branch roads, two poles
Pipe D2 is connected with D3, D5 shut-offs.The length of each transmission line portions is quarter-wave (rectangle in Fig. 6 (a)).When two poles
Pipe D3 is connected, and it causes the terminal of transmission line to shorten.Therefore, the other end (node F) can open a way (open).Similarly, when two poles
Pipe D5 is turned off, and the other end (node F) can open a way, because it is 1/2nd wavelength (two quarter-wave portions between KF
Point).Similarly, SPDT switch uses at least two diodes.However, in the design, only one of which diode (D6) increases
To this circuit.A PIN diode is saved to reduce cost, in input because these diodes are high-power.It also will
Noise coefficient improves 0.3-0.5dB.Additionally, the diode D6 in RX branch roads is under reverse bias movable (active).
By providing high backward voltage, insertion loss is reduced, and noise coefficient is improved.In TMA can using diode D5,
D2, D3 and D4 are with the switching between gain mode and bypass mode.
Some new features of the present invention are described below with reference to Fig. 6 a, 6b and 6c.
Using D1 and isolator
As described in the citing in Fig. 6 a, single PIN diode (node B) is used to switch TX circuits.The switch is used for
Start TX branch roads in RX patterns.By increasing Feedback Loss, it is to avoid the vibration and ripple (ripple) in TMA RX responses.Adopt
It is advantageous in that with single PIN diode and realizes low insertion loss.Unfavorable is from RX pattern switchings to the mistake of TX patterns
Cheng Zhong, high power is there may be when the switch connection on the switch.Because diode causes short circuit current, most
Incident power is reflected.If not implementing protection, the power of reflection will go into LNA.Isolator (node M) resistance in Fig. 6 a
Stop the power and reach LNA.By this way, any reflection power will be dissipated in the resistance of isolator.(RF isolators are prevented
Reflection power returns to transmitter output end, also prevents other signals from traveling to transmitter output end.)
Using the BPF in RX branch roads
As described in the circuit diagram in Fig. 6 a, increase bandpass filter (BPF) with the ectoparasite radiation of cancellation band.In fact,
Circulator (the first and second circulators as shown in Figure 6 a) does not have out-of-band high isolation.Because low Feedback Loss, this leads
Cause vibration and spike in the response of TMA.By the loop insertion loss for increasing out of band signal, positioned at main band central authorities
BPF eliminate this with outer spike.
Gain/bypass configuration
Diode D2-D5 and seven (7) a quarter circuit packs realize gain/bypass changeover.When not biasing quilt
When being administered to TMA, TMA is considered as keeping work.In fact, even if RX signals are not exaggerated, TMA also should be believed by TX and RX
Number.When not biasing, all PIN diodes are all to disconnect.When D5 disconnects, node K open circuits, node I is short-circuit.Same feelings
Condition occurs in node G.When node I and G are short-circuit, node F and C open a way.In this manner, LNA parts are left from circuit.It is another
Aspect, because diode D2, D3 and D6 disconnect, RX signals will be by FEDC paths.When TMA has bias, occur contrary
Situation.In this case, diode D2 and D3 are to turn on.Therefore, circuit CDEF open circuits.Equally, because D4 and D5 are to connect
Logical, circuit IK and GI open circuit.Therefore, RX signals pass through LNA.
New TX switch designs
In figure 6b, another embodiment of new TX switch designs is shown.In the example design, the switch is by following
Ring device, PIN diode and load composition.In the specific embodiment of diagram, the 3rd circulator is arranged in circuit and is located at first
And the node B between second circulation device.Therefore, diode D1 is repositioned between the 3rd circulator at node B and load.
When diode D1 open circuits, TX power can pass through (through circulator).When diode D1 is short-circuit, TX signals can reach load.At this
Under the mode of kind, the TX power of the beginning and end of TX patterns will not be reflected but dissipated in the load.The design is in addition
One advantage is that PIN diode power demand is fewer than bypass diode a lot.If as can be seen that dissipated in by-pass switch
Power is P1, dissipation power is P in new switch2, P1/P2≈50/4Rd.For a resistance is the diode of 2 Ω, should
Ratio is just 6.25.This means that the PIN diode rated power of the design can be low to only the 16% of bypass diode.If
Using the switch, the configuration in Fig. 6 c can be used.As fig. 6 c, in a further embodiment, isolator can be removed.
As described in Fig. 7, base transceiver station (BTS) can be incorporated to the TDD-TMA.BTS is schematically shown as hand
Machine signal tower (cell tower) or radio mast, the cell tower (cell tower) or radio mast include antenna
The 11 time division duplex tower amplifiers (TDD-TNA) 10 being connected with the antenna, by the communications cable 55 TDD- is connected to
The BTS transceivers 52 of TMA10 and BTS ports 50.In other embodiments, multiple TMA are installed on single cell tower.Often
Individual TDD-TMA 10 includes TX circuits 14 and the RX branch road in parallel with TX circuits 14.The TX circuits 14 include being connected to BTS ports
First circulator 20, be connected to the second circulation device 22 of antenna, and the TX switches between the first and second circulators.Institute
Stating RX branch roads includes the by-pass line 16 in parallel with gain circuit 18, and the gain circuit includes the He of low-noise amplifier (LNA) 12
RX branch protections switch (D6 or SW between TX circuits and RX branch roadsRX3), for passing through when amplifier is in TX patterns
Disconnect switch (connecting diode D6) to isolate RX branch roads to protect LNA.For the purpose of this specification, RX branch roads include cutting
The by-pass line 16 (being defined as node FEDC) changed and switchable gain circuit 18 (being defined as node IHG).By such as Fig. 6 a-
Described by the example of 6c, TX circuits include the first circulator 20 of connection (or being connected to) BTS ports.First circulator can lead to
Cross directional coupler 30 and bias device for example shown in the embodiment of Fig. 2 a and be directly or indirectly connected to BTS ports.TX circuits
The 12 second circulation devices 22 that may include connection antenna as shown in Figure 2 a.TX circuits 12 may include the electricity that Fig. 6 a are illustrated by way of example
Hold C1 and C2.TX circuits may include branch's connection (node B) of the PIN diode D 1 of the ground connection shown in Fig. 6 a.Alternatively
Ground, as shown in figs. 6b and 6c, TX circuits 12 may include the 3rd circulator 40 being located between the first and second circulators.In Fig. 6 b
In 6c, the 3rd circulator connection PIN diode D 1, and be grounded by ohmic load 42.
As Fig. 6 a-6c are further described by example, RX branch circuit parallel connections are to TX branch roads.In the described embodiment,
A part of (BTS sides) includes isolator and electric capacity C3, and Part II (antenna side) include electric capacity C4, RX branch protection switch and
Electric capacity C4.As described in these examples, RX branch protections switch includes the ohmic load of PIN diode D6 and ground connection.
As Fig. 6 a-6c are illustrated by way of example, three quarter-wave line parts of switchable by-pass line are by each
From PIN diode D2 and D3 separate.As shown in these examples, by-pass line is by part in parallel to gain circuit, Mei Yisuo
Part is stated comprising quarter-wave line part 28 and electric capacity C4.As these examples are further demonstrated that, gain circuit includes
The bandpass filter BPF26 being connected with the output end of LNA (i.e. the BTS sides of LNA), selectable VA (variable attenuator) is located at
Between LNA and BPF26.What these the special embodiments such as the present invention were illustrated, the terminal of gain circuit (node G and I) connects
Another part is connect, PIN diode (D4, D5) of each described part comprising quarter-wave line part 28 and ground connection.
PIN diode D4 and D5 are connected, by electrically removing gain circuit 18 from circuit LNA12 is isolated.Diode D2 and D3 are disconnected, is made
Electric current flows through by-pass line 16.On the contrary, connecting D2 and D3 blocks the bypass.D4 and D5 is disconnected, therefore allows electric current to flow through
Gain circuit 18, so as to flow through LNA12.
Disclosed by way of example by description before and especially in Fig. 6 a-6c, TDD-TMA can be in TX patterns and RX moulds
Switch between formula.In one illustrative embodiment of the present invention, TDD-TMA can further gain mode and bypass mode it
Between switch.
In Fig. 6 a-6c, due to the change of LNA gain with temperature, can adopt in the gain circuit 18 after LNA12 variable
Attenuator (VA) is carrying out gain compensation.Processor senses LNA temperature, and by controlling its bias voltage adjustment VA decay.It is logical
Pad value is overregulated, whole TMA gains are adjusted in target zone.
Such as with TDD-TMA of the prior art, the TDD-TMA disclosed in US2011/0032854 compares, this new technology
Advantage and benefit can be further appreciated and evaluate.Fig. 8 of US2011/0032854 be replicated here in order to the present invention with
The comparison of the prior art.
Embodiments of the invention have the advantages that at least four is main relative to TDD-TMA prior arts：
I () adopts by-pass switch to LNA
As shown in figure 8, being designed with two diodes and a coupler shown in US2011/0032854.Conversely,
Using the design being distributed, the design of the distribution not only provides bypass to embodiments of the invention, and protects low-noise amplifier
(LNA) exempt from by transmitter power.
(ii) attenuator is adopted to be used to isolate in LNA
Be designed with two attenuators and four SPDT switches in US2011/0032854 are used between LNA and decay
Switching.This causes LNA from TX power.Conversely, embodiments of the invention are on the contrary using TX/RX switches and isolator.Should note
Anticipate and arrive, the switch designs for TX and RX are also new.
(iii) transform attenuator is switched as TX
The PIN diode for being designed with combining shown in US2011/0032854.The technology using high power combination, two
Individual high-power diode and two high-power resistors.Conversely, the embodiments of the invention described in Fig. 6 b and 6c are only with being used for
A circulator, a PIN diode and a high-power resistor that TX switches.
(iv) coupler
It is designed with coupler to monitor TX signals in US2011/0032854.The coupler be arranged on circulator it
Afterwards.Although embodiments of the invention are also adopted by coupler for monitoring TX signals, the coupler in new design is arranged on circulator
Before, as Fig. 2 a and 2b by way of example shown in.The advantage that coupler is arranged on the upstream of first circulator is that it is allowed more
Many times switch on and off switch.
The new technology is described in the way of specific embodiment and configuration, and the mode of the specific embodiment and configuration is only
It is intended in exemplary.In the case of the invention thought presented without departing from the application, those skilled in the art should be able to manage
Solution can make many obvious changes, improvement and modification.Therefore, the scope of the exclusive right sought by applicant is considered as
It is not limited except as by the appended claims.
Claims (21)
1. one kind is used for the time division duplex tower amplifier of base transceiver station (BTS), and the amplifier includes：
Low-noise amplifier (LNA)；
TX/RX switching circuits include：
It is connected to the first circulator of BTS ports；
It is connected to the second circulation device of antenna；
TX switches between first and second circulator；And
RX branch protections switch between the second circulation device and the input of the LNA, for when the amplifier
In TX patterns when protect the LNA, wherein, RX branch protections switch includes single PIN diode and the resistance being grounded
Load, the output end of the LNA is connected to the first circulator.
2. amplifier as claimed in claim 1, wherein, the TX switches include the single PIN diode of ground connection.
3. amplifier as claimed in claim 1, wherein, the TX switches include the 3rd circulator, be connected to the described 3rd follows
The single PIN diode of ring device and the ohmic load for being connected to the PIN diode, the carrying ground.
4. amplifier as claimed in claim 2, further includes:
RX branch roads, the RX branch roads include the by-pass line with gain lines in parallel, and the gain circuit includes the LNA；With
And
The isolator for being connected to the first circulator between the first circulator and the RX branch roads.
5. amplifier as claimed in claim 3, further includes：
RX branch roads, the RX branch roads include the by-pass line with gain lines in parallel, and the gain circuit includes the LNA；With
And
The isolator for being connected to the first circulator between the first circulator and the RX branch roads.
6. amplifier as claimed in claim 1, including：
Including the switchable gain circuit of LNA, for selectively with gain mode operation；And
With the switchable by-pass line of the gain lines in parallel, the by-pass line include quarter-wave transmission line road
Part and the diode of two ground connection, for selectively or when without dc source running in bypass mode.
7. amplifier as claimed in claim 1, further includes the band logical filter for connecting the LNA in the gain circuit in RX branch roads
Ripple device.
8. amplifier as claimed in claim 1, including the orientation being connected between the first circulator and the BTS ports
Coupler.
9. amplifier as claimed in claim 1, including four diodes for switching between gain and bypass mode, its
In, two in four diodes are connected in by-pass line, two other connection gain in four diodes
The terminal of circuit.
10. one kind is used for the time division duplex tower amplifier (TDD-TMA) of base transceiver station (BTS), and the amplifier includes：
TX circuits, including the first circulator for being connected to BTS ports, the second circulation device for being connected to antenna and positioned at first and
TX switches between second circulation device；
RX branch roads, with the TX lines in parallel, the RX branch roads include the switchable side with switchable gain lines in parallel
Route road, the gain circuit includes low-noise amplifier (LNA)；And
RX branch protections are switched, between the TX circuits and the RX branch roads, when the amplifier is in TX patterns, and institute
LNA described in RX branch protection switch protections is stated, wherein, the RX branch protections switch includes single PIN diode with ground connection
Ohmic load.
11. TDD-TMA as claimed in claim 10, wherein, TX switch includes the PIN diode of ground connection, and wherein,
The RX branch protections switch includes the PIN diode being grounded.
12. TDD-TMA as claimed in claim 10, wherein, the TX switches include circulator, PIN diode and ground connection
Ohmic load, and wherein, the RX branch protections switch includes the PIN diode being grounded by ohmic load.
13. TDD-TMA as claimed in claim 10, wherein, the gain circuit includes being connected to the output end of the LNA
Bandpass filter, and wherein, the by-pass line is included by detached three quarter-waves of PIN diode of two ground connection
Long transmission line road part.
14. TDD-TMA as claimed in claim 10, wherein：
The TX switches include the PIN diode being grounded；
The RX branch protections switch includes the PIN diode being grounded；
The gain circuit includes the bandpass filter of the output end for being connected to the LNA；
The by-pass line is included by the two PIN diodes detached three quarter-wave transmission line roads part being grounded；
The gain circuit is in parallel with the by-pass line by quarter-wave line part；And
Every one end of the gain circuit connects the quarter-wave transmission line road being connected with the PIN diode of ground connection.
A kind of 15. base transceiver stations (BTS) include：
Antenna；
It is connected to the time division duplex tower amplifier (TDD-TMA) of the antenna；And
The BTS transceivers being connected with the TDD-TMA by the communications cable；
Wherein described TDD-TMA includes：
TX circuits, including the first circulator for being connected to BTS ports, the second circulation device for being connected to antenna and positioned at first and
TX switches between second circulation device；
RX branch roads, with the TX lines in parallel, the RX branch roads include the by-pass line with gain lines in parallel, the gain line
Road includes the gain circuit of low-noise amplifier (LNA)；And
RX branch protections are switched, between the TX circuits and the RX branch roads, when the amplifier is in TX patterns, and institute
LNA described in RX branch protection switch protections is stated, wherein, the RX branch protections switch includes single PIN diode with ground connection
Ohmic load.
16. base transceiver stations as claimed in claim 15, wherein, the TX switches include circulator, PIN diode and resistance
Load.
17. base transceiver stations as claimed in claim 15, wherein, the TX switches include the PIN diode being grounded, Yi Jiqi
In, the TX circuits are connected to the RX by the isolator being connected between the first circulator and the by-pass line
Road.
18. base transceiver stations as claimed in claim 15, wherein, the by-pass line of the RX branch roads includes being connect by two
PIN diode detached three quarter-wave transmission line roads part on ground, and wherein, the gain circuit of the RX branch roads
Including the LNA and the bandpass filter of the output end of the connection LNA.
19. base transceiver stations as claimed in claim 18, wherein, the by-pass line passes through quarter-wave line part
With the gain lines in parallel, and wherein, every one end of the gain circuit and four be grounded by respective PIN diode
/ mono- circuit pack connects.
20. is a kind of for by time division duplex tower amplifier, from RX pattern switchings to the method for TX patterns, methods described to include：
The increase of TX power in TX circuits of the detection with first circulator and second circulation device；
Each for a pair of switches for being grounded at each end of gain circuit by connection, isolates the RX with the TX lines in parallel
Low-noise amplifier (LNA) in the gain circuit of branch road；
The RX branch protections switch for being grounded the second circulation device is disconnected, wherein, the RX branch protections switch includes single
PIN diode and the ohmic load of ground connection；And
Disconnect in the TX circuits TX switch so that TX power from the first circulator by the second circulation device to
Antenna, travels through the TX circuits.
21. is a kind of for by time division duplex tower amplifier, from TX pattern switchings to the method for RX patterns, methods described to include：
The reduction of TX power in TX circuits of the detection with first circulator and second circulation device；
The TX switches connected in the TX circuits；
Disconnect each in a pair of switches of each end ground connection of the gain circuit comprising low-noise amplifier；And
The RX branch protections switch for being grounded the second circulation device is connected, wherein, the RX branch protections switch includes single
PIN diode and the ohmic load of ground connection.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161537345P | 2011-09-21 | 2011-09-21 | |
| US61/537,345 | 2011-09-21 |
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| Publication Number | Publication Date |
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| CN103095361A CN103095361A (en) | 2013-05-08 |
| CN103095361B true CN103095361B (en) | 2017-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210360862.6A Expired - Fee Related CN103095361B (en) | 2011-09-21 | 2012-09-21 | Time division duplex tower mounted amplifier for base station receiving and sending table |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106411385B (en) | 2016-08-29 | 2020-01-10 | 西安华为技术有限公司 | Tower top amplifier |
| CN219227597U (en) * | 2020-04-01 | 2023-06-20 | 凯镭思公司 | Tower top amplifier |
| CN117294326A (en) * | 2023-11-13 | 2023-12-26 | 北京唯得科技有限公司 | Receiving link protection module and receiving link protection circuit for TDD system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101527956A (en) * | 2009-03-31 | 2009-09-09 | 华为技术有限公司 | Signal amplifying device and base station system |
| CN201562964U (en) * | 2009-11-27 | 2010-08-25 | 株洲普天中普防雷科技有限公司 | Lightning protection feed between tower amplifier and base |
| CN201726540U (en) * | 2010-06-28 | 2011-01-26 | 京信通信系统（中国）有限公司 | Time division duplex system and tower mounted amplifier based on same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8295212B2 (en) * | 2009-08-05 | 2012-10-23 | Alcatel Lucent | System and method for TDD/TMA with hybrid bypass switch of receiving amplifier |
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2012
- 2012-09-21 CN CN201210360862.6A patent/CN103095361B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101527956A (en) * | 2009-03-31 | 2009-09-09 | 华为技术有限公司 | Signal amplifying device and base station system |
| CN201562964U (en) * | 2009-11-27 | 2010-08-25 | 株洲普天中普防雷科技有限公司 | Lightning protection feed between tower amplifier and base |
| CN201726540U (en) * | 2010-06-28 | 2011-01-26 | 京信通信系统（中国）有限公司 | Time division duplex system and tower mounted amplifier based on same |
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| CN103095361A (en) | 2013-05-08 |
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