CN103095263B - Circuit arrangement including common source sensing FET - Google Patents
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- CN103095263B CN103095263B CN201110453448.5A CN201110453448A CN103095263B CN 103095263 B CN103095263 B CN 103095263B CN 201110453448 A CN201110453448 A CN 201110453448A CN 103095263 B CN103095263 B CN 103095263B
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Abstract
The present invention relates to include the circuit arrangement of common source sensing FET.Disclose a kind of current sensing circuit to arrange.This circuit arrangement includes load transistor, and it goes to be couple to the load current of the load of the drain electrode of load transistor for control.Sensing transistor is couple to load transistor.Sensing transistor has provides the drain electrode measuring electric current representing load current.Load transistor and sensing transistor are the field-effect transistors with common source electrode.Measuring circuit is configured to receive from sensing transistor to be measured electric current and generates output signal according to it, and this output signal represents load current.
Description
Technical field
The present invention relates to use the field of the current sense of the transistor load electric current of so-called sensing transistor.
Background technology
The current sensing circuit using so-called current sense transistor (or " sensing FET ") has been commonly used for many years.These current sensing technique are useful especially when measuring the load current of the power field effect transistor (power fet) being made up of multiple transistor units, as explanation in such as U.S. Patent Application Publication No. 2001/0020732 A1.These power field effect transistors have the common drain region of all transistor units for composition power crystal duct member.Common drain region is connected by the drain electrode being arranged on chip back surface, and source region contacts on front wafer surface with corresponding source electrode and is connected in parallel.The source electrode of one transistor unit (being referred to as " sensing unit ") can be isolatedly connected to extract the current signal that (tap) represents the load current of the multiple transistor units flowing through load transistor.Certainly, minority transistor unit can be connected in parallel to form sensing transistor.
In the circuit arrangement including load transistor/sensing transistor pair, the source current of sensing electric current is directly proportional to the source current of load transistor, thus scale factor derives from the ratio of the electric current conduction area of load transistor and the electric current conduction area of sensing transistor, the number of the transistor unit that its (the most generally) is equal in load transistor and the ratio of sensing transistor respectively.
Only when two transistors (load transistor and sensing transistor) operate in identical operating point, i.e. when two transistors are provided identical grid-source voltage and are exposed to identical dram-source voltage, meet aforementioned proportion condition.It is known as guaranteeing that two transistors operate and adaptable many circuit in identical operating point.It is only used as example, for common drain MOS technology, it is possible to use the source voltage of sensing transistor is set as that the source voltage with load transistor mates by operational amplifier.Due to common drain electrode, it is achieved that equal dram-source voltage.Additionally, sensing transistor is connected for the gate electrode of load transistor providing identical grid-source voltage to two transistors.
Although sensing transistor and load transistor operate in identical operating point due to suitable circuit, but the other undesirable side effect between the two transistor and the strict ratio between respective sources electrode current may be made alternately to deteriorate.Such as, will ensure that the uniform drain electric current density throughout (two transistors) transistor unit.Uneven drain current flows may cause inner transverse electric current, therefore makes the strict proportionate relationship between sensing transistor and the source current of load transistor distort.
Structure (the common drain on chip back surface due to transistor, the source contact of separation for sensing transistor unit), n-type transistor (such as, n-channel MOSFET) is necessarily used as high-side switch and p-type transistor (such as, p-channel MOSFET) must be used for low side switch.In both cases, source electrode is exposed to full voltage swing, it is therefore desirable to suitable protection circuit is so that protection is typically not designed to bear the gate oxide of high voltage differential.
Summary of the invention
In view of above, the current sensing circuit that there is a need to generally improve is arranged, its (at least in part) solves or alleviate the produced problem when using known sensing transistor circuit.
Disclose a kind of current sensing circuit to arrange.An example according to the present invention, this circuit arrangement includes load transistor, and it goes to be couple to the load current of the load of the drain electrode of load transistor for control.Sensing transistor is couple to load transistor.Sensing transistor has provides the drain electrode measuring electric current representing load current.Load transistor and sensing transistor are the field-effect transistors with common source electrode.Measuring circuit is configured to receive from sensing transistor to be measured electric current and generates output signal according to it, and this output signal represents load current.
According to another example of the present invention, a kind of circuit arrangement includes the first load transistor, and it is for controlling to go to be couple to the load current of the first load of the drain electrode of the first load transistor.Second load transistor controls to go to be couple to the load current of the second load of the drain electrode of the second load transistor.Sensing transistor is configured to be couple to the first or second load transistor according to switching signal.Sensing transistor has the drain electrode measuring electric current providing the load current representing the load transistor being coupled with it, and the first and second load transistors and sensing transistor are the field-effect transistors with common source electrode.Measuring circuit is configured to receive from sensing transistor to be measured electric current and generates output signal according to it, and this output signal represents the load current of the load transistor of the load transistor being couple to sensing transistor.
Accompanying drawing explanation
The present invention be may be better understood with reference to the following drawings and description.Parts in figure are not necessarily to scale, but focus on illustrating the principle of the present invention.Additionally, the part that the most identical reference instruction is corresponding.In the accompanying drawings:
Fig. 1 is the viewgraph of cross-section of the vertical common source power MOSFET components used in the various examples of the present invention；
Fig. 2 illustrates the schematic diagram of the transistor of Fig. 1；
Fig. 3 illustrates that the current sensing circuit of the first example as the present invention is arranged, it includes the sensing transistor/load transistor pair of the example according to Fig. 1；
Fig. 4 illustrates the circuit arrangement of the second example as the present invention, and it is similar to the example of Fig. 3；
Fig. 5 illustrates the circuit arrangement of the 3rd example as the present invention, and it is similar to the example of Fig. 3, and the example of comparison diagram 3 performs current sense at low side transistors；
Fig. 6 illustrates the circuit arrangement of another example as the present invention, they two high side load transistors including sharing a changeable sensing transistor；And
Fig. 7 illustrates the circuit arrangement of another example as the present invention, they two downside load transistors including sharing a changeable sensing transistor.
Detailed description of the invention
Enforcement and the use of presently preferred embodiment have been discussed in detail below.It should be appreciated, however, that the invention provides many applicable inventive concepts, it can be implemented under the most multiple concrete background.The specific embodiment discussed only illustrates for implementing and use the concrete mode of the present invention and and unrestricted the scope of the present invention.
Fig. 1 is to illustrate (at least in part) have common source electrode but the viewgraph of cross-section of field-effect transistor (FET) parts of two separation of the drain electrode with separation.Multiple transistor units are integrated in semiconductor body 100.From these transistor units, at least one transistor unit 101 forms sensing transistor and most of transistor unit 102 forms load transistor.The typical vertically power crystal duct member of contrast, is arranged in the top surface 103(of semiconductor body 100 i.e., the front of semiconductor body 100) on metal layer form the common source electrode 41 shared by several transistor components.
In this example, common source electrode 41 is shared with the transistor unit 102 forming load transistor by (one or more) transistor unit 101 forming sensing transistor.Transistor unit is limited by so-called groove 17, and this groove 17 starts to extend to semiconductor body 100 from the top surface 103 of semiconductor body 100.Gate electrode 15(is typically made up of polysilicon) be arranged in groove 17 in and semiconductor body 100 by means of sealing coat 16 with surrounding isolate, this sealing coat 16 is typically oxide skin(coating).
Semiconductor body 100 includes source region 111、112, body regions 121、122, drift region 131、132With drain region 141、142.Wherein footmark 1 indicates the region of correspondence to belong to load transistor 102, and footmark 2 indicates respective regions to belong to sensing transistor 101.According to the production technology used, it is possible to use the epitaxial growth of dopant material, ion implanting or diffusion produce source region, body regions, drift region and drain region.Source region 111、112Top surface 103 along semiconductor body 100 extends (and the most in parallel) and is directly contacted by common source electrode 41.Drain region 141、142Basal surface 104 along semiconductor body 100 extends and by the drain electrode 42 on the basal surface 104 being arranged in semiconductor body 1001、422Directly contact.In source region 111、112With drain region 141、142Between, body regions 121、122And drift region 131、132Extend parallel to top surface and the basal surface 103,104 of quasiconductor 100.
Body regions 121、122It is arranged to adjacent with groove 17.That is, groove extends to semiconductor body the deepest so that trench bottom reaches corresponding drift region 13 from the top surface 103 of semiconductor body 1001(or respectively 132).In active transistor, load current is respectively via corresponding body regions 121、212With drift region 131、132Respectively from source region 111、112Flow to drain region 141、142, thus under the influence of the electric field caused due to charged gate electrode 15, the raceway groove of electric charge carrier defines the long limit of the sidewall of groove 17.
The sealing coat 33 covering groove 17 makes the gate electrode 15 being arranged in groove 17 isolate with the common source electrode 41 on the top surface being arranged in semiconductor body 103.
Some deep trouths 17 ' extend downwardly into basal surface 104 from the top surface 103 of semiconductor body 100, in order to allow straight-through connection 21.For this purpose it is proposed, deep trouth 17 ' is normally filled with polysilicon, it forms the straight-through connection 21 of electricity.Similar to gate electrode 15, the polysilicon of the straight-through connection 21 of formation is isolated by means of the semiconductor body 100 of insulating barrier 22 with surrounding, and this insulating barrier 22 is typically silicon oxide layer.The gate electrode belonging to actual crystal duct member (such as, load transistor 102) is typically electrically interconnected to facilitate the electrical connection of the grid at the basal surface 104 of semiconductor body 100 with corresponding straight-through connection 21.For this reason, straight-through connection 21 is formed gate contact electrode 431With 432Basal surface 103 at respective metal layer cover.
If the gate electrode 43 of transistor component 101,1021With 432Should be connected in parallel, the most only need a deep trouth 17 ', it allows the common gate electrode that contact is arranged in groove 17.Electrical connection between the gate electrode 15 and the straight-through connection 21 being arranged in deep trouth that are arranged in groove can be realized by translot (not shown), and this translot extends in the plane parallel with the cross section shown in Fig. 1, therefore connects groove 17 and the deep trouth 17 ' of correspondence.
As can be from seen in fig. 1, deep trouth 17 ' makes two different transistor components (in this example i.e. sensing transistor 101 and load transistor 102) separate.The known vertical transistor of contrast, the most most of transistor units share common drain electrode (for example, see U.S. Patent Publication number 2001/0020732 A1), transistor unit shown in Fig. 1 shares common source electrode, has a drain electrode of separation and gate electrode that (alternatively) separates.Owing to deep trouth 17 ' provides two different bodies of transistor component 101,102 and being kept completely separate of drift region, in drift region, therefore achieve CURRENT DISTRIBUTION evenly.Additionally, by forbidding drift region 131、132In transmission electric current, it is suppressed that parasitic semiconductor device.These advantages make common source, separation drain transistor for current sense more appropriate much.
Fig. 2 schematically illustrates the transistor component 101,102 of Fig. 1 in circuit diagram, and transistor component 101 is denoted as P-MOS sensing transistor T2 and load transistor parts 102 are denoted as P-MOS load transistor T1 the most in fig. 2.The source terminal of two transistors must be connected in parallel, because the transistor unit forming transistor shares common source electrode (common source electrode 41 seeing in Fig. 1).
Fig. 3 illustrates the drain transistor application to (sensing transistor, load transistor) of common source as shown in Figure 2, separation.In the example of fig. 3, common source transistor T1、T2It is the p-channel MOSFET in high side configuration.That is, sensing transistor T2With load transistor T1Common source terminal S(and therefore common source electrode, see the reference 41 in Fig. 1) be connected to high side for electric potential VB.It is illustrated in Figure 5 the analogous circuit using the n-channel MOSFET in downside configuration.
In the example of fig. 3, load impedance ZLIt is connected to load transistor T1Drain terminal D1Between low side power current potential (being also known as reference potential, it can be ground).Load transistor controls to be supplied to (such as, outside) load impedance Z via lead-out terminal OUTLLoad current iL.According to being respectively supplied to load transistor T1With sensing transistor T2Gate terminal G1And G2(and therefore it is supplied to gate contact electrode, see the reference 43 in Fig. 11、432) signal SG, perform load current and control.
As two transistor T1And T2In identical operating point (being also known as bias point or static point) during operation, flow through the measurement electric current i of the source drain path of sensing transistorM(substantially) with the load current i of the source drain path flowing through load transistorLIt is directly proportional.For this purpose it is proposed, employing control circuit, it is configured to sensing transistor T2Drain voltage be adjusted to equal to load transistor T1Drain voltage.It is illustrated in Figure 3 an example of suitable control circuit.Control circuit includes operational amplifier OA accordingly1With another transistor T3To regulate sensing transistor T2Drain potential in case with load transistor T1Drain potential coupling.Measurement electric current i is determined subsequently by the ratio of the ratio between the area of respective transistor or the generally number of the active crystal pipe unit of respective transistorMWith load current iLBetween ratio iM/iL。
Another transistor T3Load paths (source-drain current path) be connected in series to sensing transistor T3Load paths.Another transistor T3Grid thus be couple to operational amplifier OA1Output and be driven by, this operational amplifier OA1Input be connected respectively to load transistor T1With sensing transistor T2Drain terminal D1And D2。
Further it is provided that measuring circuit, it is configurable to generate the output signal representing load current.In very simple configuration, measuring circuit includes resistor RM, itself and sensing transistor T2Be connected in series (and if there is another transistor T3Connection the most connected in series) to generate the leap resistor R that can serve as output signalMPressure drop VM=iM∙RM。
P-channel MOSFET is used to reduce for generating suitable signal V as high-side transistorGThe required complexity of gate drivers (not shown).Due to source potential be constant (be for electric potential V in this exampleB), it is therefore desirable to less effort protects gate insulator (seeing gate oxide level 16) from over-voltage breakdown.Additionally, due to transistor T1And T2It is kept completely separate and is therefore decoupled by deep trouth 17 ' (seeing Fig. 1), therefore drain current iMAnd iLBetween ratio significantly improve and the quality of therefore current sense significantly improves.Additionally, due to the grid-source voltage of sensing transistor and load transistor is always to maintain identical, therefore the separation protection of gate-source path is dispensable.On the contrary, this always problem when using n-channel high-side transistor.
Fig. 4 illustrates the example closely similar with the example of Fig. 3.The circuit of Fig. 3 is corresponding with the circuit of Fig. 4.But, in the circuit of Fig. 4, control circuit includes extra transistor T01, it is coupled in parallel to load transistor to allow load transistor T1Drain potential smaller current connect.As load transistor T1With sensing transistor T2When being actively driven into conducting state, extra transistor T01Also it is conducting, and by load transistor T1Drain potential be supplied to operational amplifier OA1.Reducing load transistor T1Place drain voltage in the case of (such as when drive transistor enter cut-off state time) extra transistor T01The input of protection operational amplifier, because transistor T01Drain-source path taken over pressure drop.Although extra transistor T01For extracting the drain potential of load transistor, but the function of the example of Fig. 3 and Fig. 4 is identical.
Fig. 5 illustrates another example, and it can be considered " reversion " version of example of Fig. 3.Accordingly, n-channel MOSFET is used as sensing transistor T2With load transistor T1.Sensing transistor T2With load transistor T1Be connected to low side transistors, i.e. their common source terminal S(and therefore their common source electrode, see the reference 41 of Fig. 1) and it being connected to low side power current potential, this low side power current potential is earth potential in this example.Similar to the example of Fig. 3, load impedance ZLIt is connected to load transistor T1Drain terminal D1With high side for electric potential VBBetween.By load transistor T1It is supplied to load impedance ZLLoad current be again denoted as iL.As in the example of Fig. 3, the grid of two transistors receives the identical gate drivers signal S provided by suitable gate driver circuit (not shown)G.Therefore, if sensing transistor T2Drain electrode (see the reference 43 in Fig. 12) current potential equal to load transistor T1Drain electrode (see the reference 43 in Fig. 11) current potential, then the drain current i of sensing transistorM(generally) with load current iLProportional.
In present exemplary, it is used for regulating sensing transistor T2The control circuit of drain potential can include operational amplifier OA1With another transistor T3, they are similarly connected to transistor T in the example of Fig. 31And T2.But, the example of comparison diagram 3, by sensing transistor T2The measurement electric current i providedMOnly available (accessible) measurement at the high side of circuit arrangement.In order to obtain the output signal about low side power current potential (that is, earth potential), can be connected to current mirror 20 measure electric current iMCurrent path in case provide second measurement electric current iM1, it is equal to measuring electric current iMOr be proportional to and therefore with load current iLProportional.Similar to the circuit of Fig. 3, " mirror image " electric current iM1Resistor R can be fed toMIn so as to provide represent load current iLOutput voltage signal VM=RM∙iM1。
The enhanced scheme of the example having illustrated Fig. 3 of Fig. 6.Accordingly, in the way of identical with Fig. 3, sensing transistor T is used2.But, sensing transistor T2SW can be switched by means of (such as, quasiconductor)1And SW2It is switchably connected to the first load transistor T1aOr the second load transistor T1b.It is once connected to concrete load transistor (load transistor T1aOr T1b), then about the load transistor connected, the operation of circuit arrangement is identical with the example of Fig. 3.Therefore, a sensing transistor T2May be used for many different load transistor T1a、T1bThe current measurement at place.For this purpose it is proposed, gate terminal G2According to controlling switch SW1On off state switching signal switchably (see switch SW1) it is connected to the first load transistor T1aOr the second load transistor T1bGrid.Additionally, operational amplifier OA1One input according to control switch SW2On off state switching signal switchably (see switch SW2) it is connected to the first load transistor T1aOr the second load transistor T1bDrain electrode.For switch SW1And SW2Both, switching signal can be identical.
The circuit of Fig. 7 by with the circuit of Fig. 5 with the circuit of Fig. 3 corresponding identical in the way of corresponding with the circuit of Fig. 6.The example of Fig. 7 includes the n-channel common source transistor being connected in downside configuration, and one of them sensing transistor is shared by least two load transistor in the way of similar with the example of Fig. 6.
When using traditional common drain power MOSFET as load and sensing transistor, sensing transistor T2It will be impossible for " being shared " by least two load transistor.Because the source potential of sensing transistor must follow the source potential of load transistor in omnibus circuit.This is necessary, because source electrode can not bear high voltage.But, when the use such as common source technology according to above-described embodiment, this problem does not exists.
While there has been disclosed that the various exemplary embodiments of the present invention, but for those skilled in the art it will be apparent that can make various changes and modifications in the case of without departing from the spirit and scope of the present invention, it will realize some advantages of the present invention.For this area rational technique personnel it will be apparent that, can the most alternative other perform identical functions parts.It should be mentioned that can combine with the feature of other figures (even in those figures the most specifically mentioned) with reference to the feature specifically scheming to be explained.Additionally, the method for the present invention can realize in all software implement scheme using suitable processor instruction or is utilizing hardware logic and combining in the mixing implementation to realize identical result of software logic to realize.These are intended to be covered by the appended claims for the amendment of inventive concept.
Claims (11)
1. a circuit, including:
First load transistor, is configured to control to go to be coupled to the load current of the first load of the drain electrode of described first load transistor；
Second load transistor, is configured to control to go to be coupled to the load current of the second load of the drain electrode of described second load transistor；
Sensing transistor, it is configured to be coupled to described first load transistor or described second load transistor according to switching signal, described sensing transistor has the drain electrode measuring electric current providing the load current representing coupled load transistor, and wherein said first load transistor and described second load transistor and described sensing transistor include the field-effect transistor with common source electrode；And
Measuring circuit, is configured to receive described measurement electric current from described sensing transistor and generate output signal according to it, and described output signal is shown coupled to the load current of the load transistor of described sensing transistor.
Circuit the most according to claim 1, farther includes:
First switch, is configured to make the gate contact electrode of described sensing transistor couple with the gate contact electrode of described first load transistor according to described switching signal or couple with the gate contact electrode of described second load transistor.
Circuit the most according to claim 1, wherein said first load transistor and described second load transistor and described sensing transistor include p-channel MOS transistor, and their common source electrode is coupled to high side for electric potential.
Circuit the most according to claim 1, wherein said first load transistor and described second load transistor and described sensing transistor include n-channel MOS, and their common source electrode is coupled to low side power current potential.
Circuit the most according to claim 1, wherein said measuring circuit includes control circuit, described control circuit to be configured to the drain potential of described sensing transistor being adjusted to the drain potential equal to the load transistor being coupled to described sensing transistor.
Circuit the most according to claim 5, wherein said measuring circuit farther includes output circuit, and described output circuit receives described measurement electric current and is configured to supply as output signal, the voltage signal that represents described measurement electric current.
Circuit the most according to claim 6, wherein said output circuit includes resistor, and the pressure drop crossing over described resistor is the voltage signal representing described measurement electric current.
Circuit the most according to claim 5, wherein said measuring circuit farther includes output circuit, described output circuit includes current mirror, and described current mirror receives described measurement electric current and is configured to supply the current signal as output signal and described measurement current in proportion.
Circuit the most according to claim 1, farther includes:
Semiconductor body；And
Multiple transistor units, are integrated in described semiconductor body, and at least one in described transistor unit forms described sensing transistor and multiple transistor unit forms load transistor.
Circuit the most according to claim 9,
The most each transistor unit includes grid, source region, body regions, drift region and drain region；
The grid and the drain region that wherein form the transistor unit of load transistor are connected in parallel；
The one or more drain regions of one or more transistor units wherein forming described sensing transistor isolate with the drain region of the transistor unit forming one or more load transistors；And
The source region of the most all the plurality of transistor units is electrical connection in parallel by the top metallization on the front of described semiconductor body.
11. circuit according to claim 9, wherein drain electrode and gate contact electrode are arranged on the back side of described semiconductor body, and the grid of the transistor unit wherein forming one or more load transistor extends to the straight-through connection at the back side via the front from described semiconductor body and is connected to the gate contact of correspondence.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/982641 | 2010-12-30 | ||
| US12/982,641 US8373449B2 (en) | 2010-12-30 | 2010-12-30 | Circuit arrangement including a common source sense-FET |
| US12/982,641 | 2010-12-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103095263A CN103095263A (en) | 2013-05-08 |
| CN103095263B true CN103095263B (en) | 2016-12-14 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101562444A (en) * | 2008-12-30 | 2009-10-21 | 天津南大强芯半导体芯片设计有限公司 | High-voltage switch drive circuit |
| US7644945B1 (en) * | 2007-04-26 | 2010-01-12 | Vasilios Kourkoumelis | Restraining device for child's two-wheeled bicycle training |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7644945B1 (en) * | 2007-04-26 | 2010-01-12 | Vasilios Kourkoumelis | Restraining device for child's two-wheeled bicycle training |
| CN101562444A (en) * | 2008-12-30 | 2009-10-21 | 天津南大强芯半导体芯片设计有限公司 | High-voltage switch drive circuit |
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