CN103094386B - Solar module and process for preparing same - Google Patents
Solar module and process for preparing same Download PDFInfo
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- CN103094386B CN103094386B CN201210445485.6A CN201210445485A CN103094386B CN 103094386 B CN103094386 B CN 103094386B CN 201210445485 A CN201210445485 A CN 201210445485A CN 103094386 B CN103094386 B CN 103094386B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 98
- 238000009736 wetting Methods 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims description 28
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- 239000000203 mixture Substances 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 9
- 238000005245 sintering Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 3
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
- B32B37/065—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method resulting in the laminate being partially bonded
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/02—Temperature
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/12—Pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a solar module (14). The solar module (14) has a front face and a back face and is characterized by comprising multiple semiconductor chip solar cells (10), front face packaging elements (15) forming the front face of the solar module, and polymer back face packaging structures composing the back face of the solar module. The multiple semiconductor chip solar cells (10) are electrically connected to form a solar cell strings which respectively have back faces having back surfaces, wherein each back surface is surface passivated through a dielectric passivation layer (17); a back face electrode structure (11) containing sintered metal particles is disposed on the passivation layer (17); the metallic back face electrode structure (11) is connected with semiconductor material electric contacts of the semiconductor chip (16) through multiple local contact areas; and the contact areas are configured to be openings of the passivation layer (11) and generally the contact areas are smaller than 5 percents of the back surface, preferably 2 percents. The back face packaging structure comprise buried polymer (12), wherein the buried polymer (12) is in contact with the metallic back face electrode structure of the semiconductor chip solar cells, and is characterized in that the buried polymer (12) wets the passivation layer (17) and thus wetting areas are formed; the buried polymer (12) is buried in the wetting areas to wet the passivation area (17), and the wetting areas accounts for a proportion larger than 20 percents, preferably larger than 35 percents, and especially preferably larger than 50 percents of the area composed by the wetting areas and a covering area. In the covering area, the passivation layer (17) is covered by the back face electrode structure (11). The invention further relates to a process of preparing the solar module.
Description
Technical field
The present invention relates to a kind of solar energy module and a kind of method for manufacturing this solar energy module.
In particular, the present invention relates to a kind of solar energy module, the solar energy module has front and back, the back side
With multiple semiconductor wafer solaodes.The plurality of semiconductor wafer solaode is electrically connected and is connected into solaode string
And respectively with the back side with backside surface.Backside surface is by the passivation layer of dielectric by surface passivation.Set over the passivation layer
Put the back electrode structure of the metallic particles comprising sintering.The contact area that the back electrode structure of the metal passes through multiple local
The semi-conducting material electric contact of domain and semiconductor wafer is connected, and the contact area is configured to the opening of passivation layer and generally
Electric contact area is less than the 5% of backside surface, preferably smaller than 2%.Additionally, the solar energy module has is constituting solar energy module just
The back side encapsulating structure of the polymer at the front potted element in face and the back side of composition solar energy module, the back side encapsulating structure
With embedment polymer, the embedment polymer connects with the back electrode structure of the metal of semiconductor wafer solaode
Touch.Generally front potted element, back side encapsulating structure and solaode string are laminated, to guarantee stable being combined is formed
Body.
Background technology
For the surface passivation with the back electrode structure for including being made up of the metallic particles for sintering, i.e. open-cell material
The solaode at the back side, be present such：I.e. when solar energy module is manufactured, after lamination, the lamination at the back side is answered
Fit adhesive force, i.e., the adhesive force between back side encapsulating structure and semiconductor wafer solaode is inadequate.For making
The mechanical stability for making the metal paste of the sintering of back electrode structure is insufficient to assure that and realizes semiconductor wafer solar-electricity
The complex of the long-time stable of the embedment polymer and back side potted element at pond and the back side.
The content of the invention
Thus the purpose of the present invention is to provide a kind of solar energy module, and the solar energy module has multiple semiconductor dies
Piece solaode, the semiconductor wafer solaode has the back side of surface passivation and back side encapsulating structure, the back of the body
Face and back side encapsulating structure suitably form the complex of abundant long-time stable.
The purpose by the solar energy module as described in claim 1 and as described in claim 10 for manufacture too
It is positive can module method realizing.
Advantageous embodiment is listed in the dependent claims.
According to the present invention, polymer moistening passivation layer by this way is imbedded so that constitute wetting zones, in these profits
Polymer moistening passivation layer is imbedded in wet zone, and wetting zones are relative to the region being made up of wetting zones and overlay area
Ratio be more than 20% preferably greater than 35%, and especially preferred more than 50%, in overlay area, passivation layer is by backplate
Structure is covered.
Within the scope of the invention, wetting zones are such regions, and in that region embedment polymer is on microcosmic
Observation moistening passivation layer.In this application, overlay area refers to such region, and in that region passivation layer is by backplate
Structure is covered, but there is no between metallic particles and passivation layer contact on microcosmic.That is, form of presentation " covering " is referred to,
Back electrode structure is not covered, does not have moistening or contact passivation layer, but is overleaf deposited between electrode structure and passivation layer
In at least one cavity.The cavity is consisted of the structure of back electrode structure perforating, and the cavity is not buried
Enter polymer to be impregnated with, so that embedment polymer moistening passivation layer.That is, in overlay area, observe on microcosmic, the back side
Electrode structure and embedment material all do not recline over the passivation layer, but passivation layer does not also expose, because the back side electricity of perforating
Pole structure setting is into cover it.
The moistening can be achieved like this, that is, imbed polymer be impregnated with foam type perforate back electrode structure, and/
Or be achieved in, i.e., overleaf electrode structure is not covered with passivation layer and thus imbeds polymer due to there is no back side electricity
Pole structure imbeds polymer moistening passivation layer without being impregnated with the free space of back electrode structure, to send out with passivation layer
Raw contact and thus moistening passivation layer.Therefore wetting zones can be constructed overleaf outside electrode structure in the sense of the present invention
Into common macroscopical free space, or the wetting zones that microcosmic overleaf can also be configured within electrode structure.
By sufficient moistening on portions of its surface, it can be ensured that overleaf encapsulating structure and semiconductor wafer solar energy
The module complex of Resisting fractre is realized between battery.Even if the intrinsic stability of the metallic particles of the sintering of back electrode structure is
It is insufficient, but by imbedding the contact between material and passivation layer, particularly by means of being impregnated with to back electrode structure,
The adhesive force at the solar energy module back side can be guaranteed by foregoing degree.
In one preferred embodiment, the back electrode structure of metal and the percentage ratio of backside surface be more than
80%.That is, the macro-regions without metallic particles of backside surface are less than 20%.It is preferred that the back electrode structure of metal with
The percentage ratio of backside surface is more than 90%.It is further preferable that the back electrode structure of metal is with the percentage ratio of backside surface
More than 95%.That is, back electrode structure nearly completely or completely covers backside surface.With embedment polymer to passivation layer
Therefore moistening is preferably by imbedding polymer penetrating realizing to back electrode structure.Require back electrode structure right for this
The paste for generally being applied by silk screen printing or injection is perforate after being sintered.Embedment material is in lamination process
The unlimited hole of infiltration back electrode structure simultaneously overleaf forms network in the unlimited hole of electrode structure.It is preferably embedded into poly-
Compound not only permeates backing electrode material, but also covers backing electrode material so that embedment polymer is also disposed at back side electricity
In the structure of pole, and imbed polymer and can constitute uniform attachment with back side potted element.
Back electrode structure had unlimited hole in foregoing embodiment before with embedment polymer contact
Gap.When lamination has the semiconductor wafer solaode of embedment polymer and back side potted element, embedment polymer penetrates into
In unlimited hole and it is filled with, so as to be formed by the network of unlimited hole in lamination polymer network is imbedded.Open wide
Hole be connected with each other in many ways so that back electrode structure has the wire netting or metal architecture of porous, the metal
Net or metal architecture are embedded in polymer penetration and are filled up completely with suitable condition.That is, semiconductor wafer solar energy
Battery has metalolic network and embedment polymer network as a layer, wherein can also have unlimited hole in this layer.It is excellent
The unlimited hole of choosing ratio in this layer is relatively low.A layer is obtained by this way, and this layer has the net of two poly- connection itself
Network, the two networks combine and realize the good attached of semiconductor wafer solaode/embedment polymer/back side potted element
And realize good electric conductivity, wherein according to area ratio imbed polymer fully moistening passivation layer ensure that it is excellent
The attachment of the long-time stable of change.
In one preferred embodiment, it is laminated by this way, with two foregoing networks
Layer be provided with embedment polymeric layer, so as to realize the attachment in whole face between embedment polymer and back side potted element.Institute
State solar energy module therefore also overleaf there is such sequence of layer in addition to possible other layers, back side potted element/can
Embedment polymer/the network being made up of embedment polymer of choosing and the network/passivation layer being made up of metal.
The resistivity of back electrode structure is preferably≤1010-7Ohmm, preferably≤710-7It is Ohmm, more excellent
Choosing≤510-7Ohm·m.Thus for efficiency desired by the battery ensure that electric conductivity good enough.
In one preferred embodiment, back electrode structure has the adhering zone that thickness changes, the attachment region
With less thickness compared with remaining region, the thickness is less than 30 μm, is preferably smaller than 25 μm, preferably smaller than 20 μm, more in domain
Preferably smaller than 15 μm.This less thickness of this adhering zone is caused in the adhering zone after lamination process,
Compared with remaining region of the back electrode structure with larger thickness, the metal structure and microcosmic of polymer penetration porous is imbedded
The probability that moistening is located at the passivation layer below metal structure is higher.Last adhering zone noted earlier provides such possibility
Property, i.e., by the anchorage zone between back electrode structure and passivation layer be referred to as wetting zones within the scope of the invention.Equally certainly
Wetting zones are also constituted by region because imbed in free space polymer can direct moistening passivation layer, without for this
The metallic matrix of penetration aperture.
Compared with embedment polymer does not have the area ratio in region of moistening passivation layer, polymer moistening passivation layer is imbedded
The area ratio of wetting zones declines as the thickness of back electrode structure increases.If back electrode structure has less
Thickness, then it can relatively easily be embedded in infiltration.If the thickness of back electrode structure is zero, there is free zone
Domain.
In a preferred embodiment, it is crosslinking to imbed polymer.By crosslinking, embedment polymer connects into three-dimensional
Network.The embedment polymer of cross-linking advantageously has the characteristic for preventing from being come off from passivation layer and back electrode structure.
The polymer of cross-linking for example has higher viscosity with uncrosslinked polymer phase ratio, less solubility and higher molten
Point.
Passivation layer preferable configuration straticulation is folded.The thin layer is folded and is applied directly on semi-conducting material with least one
Passivation layer.Alternatively, one or more other layers are set on the first layer.As preferred scheme, construct what straticulation was folded
Passivation layer has the superiors that add attached layer is folded as thin layer.Back metal electrode structure is set in the superiors or in lamination
When arrange embedment material.When add attached layer is imbedded material moistening and is thus in contact with it, particularly preferred attachment can be formed.Pass through
Embedment material contact with the superiors of passivation stacking, it is ensured that to be manufactured is encapsulated by solaode/embedment material/back side
The whole complex of element composition has enough tacks.Alternatively, thin layer is folded has conductive layer as the superiors.Further
Alternatively, thin layer is folded has dielectric layer, such as silicon nitride or silicon oxynitride layer as the superiors.
Such as ethylene vinyl acetate（EVA）, polyolefin, polyvinyl butyral resin（PVB）, thermoplastic polyurethane（TPU）、
Organosilicon is adapted as imbedding polymer.It is preferred that adopting EVA.Ethylene vinyl acetate has and passivation layer, such as silicon nitride or nitrogen
The good adhesion of silicon oxide and also with back side potted element（Such as glass or plastic foil）Good adhesion.
In one preferred embodiment, there is the backside surface of semiconductor wafer solaode area ratio to be less than
20%, preferably smaller than 10%, preferably smaller than 5% free space, in the free space, passivation layer is not tied by backplate
Structure is covered.That is embedment polymer to the moistening of passivation layer mainly by carrying out reality with embedment polymer penetration back electrode structure
It is existing.This is favourable, because almost can realize good conductive characteristic in the whole surface region of passivation layer here.
Subject of the present invention further relates to the method for manufacturing solar energy module, and the solar energy module has front and the back of the body
Face, methods described has steps of：Multiple semiconductor wafer solaodes, the plurality of semiconductor wafer solar energy are provided
Battery is electrically connected and is connected into solaode string and has the back side respectively, and the back side has backside surface, and the backside surface passes through
The passivation layer surface passivation of dielectric；The back electrode structure of the metallic particles for including sintering is set on the passivation layer；It is described
The back electrode structure of metal is described to connect by the contact area of multiple local and the semi-conducting material contacting of semiconductor wafer
Tactile regional structure into passivation layer opening and generally electrical-contact area accounts for the ratio of backside surface less than 5%, preferably smaller than
2%, and the back side encapsulating structure for constituting the polymer with embedment polymer at the back side of solar energy module is laminated to too
On the back side of positive energy battery, connect with the back electrode structure of the metal of semiconductor wafer solaode so as to imbed polymer
Touch.Methods described is characterised by, laminating parameters, such as pressure and time graph are by this way arranging so that embedment is poly-
The such moistening passivation layer of compound so that constitute wetting zones, in these wetting zones, imbeds polymer moistening passivation layer, profit
Wet zone is more than 20% preferably greater than 35% relative to the ratio in the region being made up of wetting zones and overlay area, especially excellent
Choosing is more than 50%, and in the overlay area, passivation layer is covered by back electrode structure.
Semiconductor wafer solaode is so provided in a preferred embodiment so that back electrode structure has
The thickness of change.This can be achieved like this, by silk screen printing by back electrode structure with the multiple fingers with smaller spacing
The form in shape portion is applied on passivation layer.After ensuing calcination, the fingers are no longer spaced apart, but in fingers
Between constitute with the thickness less than in backplate fingers structural region back electrode structure region.Using metal paste
, used as back electrode structure, preferably aluminum paste, such as Ferro CN53-200, it can be by manufacturer Ferro for thing（The U.S. gram
Coolie orchid city）Place is buied.All metal pastes that open type stephanoporate is formed after calcination are suitable for being tied as backplate
Structure.Alternatively, the thickness of change can also be formed for example by repeatedly printing.
Embedment polymer at least partially permeates back electrode structure, until passivation layer, and moistening passivation layer.This can be with
Such mode is imbedded polymer and is made and is for example applied on back electrode structure in the form of a film for solid realizing, that is, and
By the temperature change with the time.Embedment polymer is for example heated to the first temperature, and polymer is imbedded at a temperature of first at this
With the viscosity lower than the viscosity under room temperature.Due to viscosity relatively low at the first temperature, embedment polymer at least partially oozes
Saturating back electrode structure so that embedment polymer moistening passivation layer.Then, when embedment polymer is in the form of hot plastomer
When, embedment polymer is heated to second temperature, and now viscosity is improved so that hot plastomer loses it to be used to permeate backplate
The flowable of structure.In the presence of embedment polymer is for example as ethylene vinyl acetate, embedment polymer is being heated to tool
Have after the first temperature of relatively low viscosity and be heated to higher second temperature, polymer is imbedded at the second temperature due to sending out
It is raw be cross-linked to form than first at a temperature of high viscosity.
In one preferred embodiment, include being heated to the first temperature with the temperature change of time and be heated to second
Temperature, imbeds at the first temperature polymer and has the viscosity lower than the viscosity under room temperature, at the second temperature, imbeds polymer
With the high viscosity of the viscosity at a temperature of than first.
When embedment polymer should be penetrated in the open space of back electrode structure, being heated to the first temperature is preferably reducing
Pressure under carry out, be exactly using vacuum technique or vacuum pressure technology.Can be narrow for example in hole cervical region by this technology
Filling resistance is overcome when narrow.
There is at the first temperature the viscosity lower than the viscosity under room temperature due to imbedding polymer, it is lower than the viscosity under room temperature
Viscosity stretch in lamination in the open space of free space and/or back electrode structure and moistening passivation layer.It is being heated to
During second temperature, the viscosity for imbedding polymer is raised, and no longer can be flowed by free space and/or hole so as to imbed polymer
Go out.The preferred gel and/or crosslinking that embedment polymer occurs at the second temperature.The embedment polymer of gel or crosslinking has this
The viscosity of sample, that is, imbed polymer and no longer flowed out by free space and/or hole.By crosslinking, embedment polymer is connected into
Three-dimensional network.Cross-linking changes the characteristic of embedment polymer.The embedment polymer of crosslinking is polymerized with uncrosslinked embedment
Thing is compared with higher viscosity, relatively low solubility and higher fusing point.
Embedment polymer has at the first temperature the viscosity lower than the viscosity under room temperature, at the second temperature with than the
The high viscosity of viscosity at a temperature of one, an example of this embedment polymer is ethylene vinyl acetate.Ethylene vinyl acetate
Ester includes as the example of embedment polymerProduct, for exampleFC280P/UF, this product can be bySpecialized Technology Resources,Inc.（U.S. Enfield）Buy.Embedment polymer can be wrapped
Containing cross-linking agent, but otherwise it is applied on semiconductor wafer solaode as thin film as far as possible, to avoid rejected region（Example
Such as due to bubble or crackle caused by material evaporation）, and realize to the uniform coating of back electrode structure and infiltration.
It is preferably placed such that with the temperature change of time so that at the first temperature moistening passivation layer is more than embedment polymer
25%, preferably more than 30%, very particularly preferably more than 50%, and imbed polymer and be crosslinked at the second temperature.Due to imbedding polymer
There is at the first temperature the viscosity lower than the viscosity under room temperature, embedment polymer can at the first temperature permeate backplate
Structure and moistening passivation layer.The viscosity for imbedding polymer at the second temperature is raised so that embedment polymer no longer can reversely ooze
Saturating back electrode structure, but the infiltration to backing electrode material keeps stable, and this infiltration is kept in longer period.
In a preferred embodiment, the first temperature is at 70 to 115 °C, preferably 80 to 100 °C, preferably 90 to 100 °C
In the range of, second temperature at 130 to 230 °C, preferably 130 to 200 °C, in the range of preferably 140 to 170 °C.Particularly work as
When embedment polymer is ethylene vinyl acetate, imbeds polymer and there is at the first temperature lower than the viscosity under room temperature gluing
Degree, at the second temperature with the viscosity that the viscosity at a temperature of than first is high.
Alternatively, include being heated to the first temperature with the temperature change of time and be cooled to second temperature, imbed polymer
There is at the first temperature the viscosity lower than the viscosity under room temperature, it is high with the viscosity at a temperature of than first at the second temperature
Viscosity.For example when it is hot plastomer to imbed polymer, this temperature change with the time is suitable.For example it is polyolefin, poly-
Vinyl butyral（PVB）, thermoplastic polyurethane（TPU）It is thermoplastic with organosilicon.First temperature is according to burying for being used
The material behavior for entering polymer is selected, and second temperature selects to be room temperature.That is, embedment polymer is heated to into first warm
Degree, embedment polymer has at the first temperature the viscosity lower than the viscosity under room temperature and is deformable, so as to imbed polymerization
Thing can permeate back electrode structure and moistening passivation layer, then be cooled to or place be cooled to room temperature, so as to imbed polymerization
Thing is no longer able to deform and be no longer able to inverse osmosis back electrode structure.
Optionally, in addition, can so select to imbed polymer so that embedment polymer is when being applied on passivation layer
With enough viscosity to permeate back electrode structure and moistening passivation layer, and under air effect or by adding sclerosing agent
And harden.The example of this embedment polymer includes organosilicon, such as 2K components.
It is preferred that in lamination, pressure is arranged in the range of 50000Pa to 100000Pa.Produce under this configuration negative
Pressure, the negative pressure contributes to the hole of the opening for imbedding polymer penetration back electrode structure, because the negative pressure contributes to gram
Clothes filling resistance, such as narrow hole cervical region.Negative pressure is bigger, then can preferably overcome filling resistance.On the other hand, negative pressure is also
The crackle and/or rejected region of back electrode structure may be caused.Within the scope of the invention, the pressure by be laminated vacuum and
The difference formation of the pressure in pressure chamber.
Alternatively, in lamination, pressure is arranged in the range of 100000Pa to 300000Pa.Produce under this configuration
Overvoltage, the overvoltage is by the hole of the opening of embedment polymer press-in back electrode structure.Overvoltage rises to overcoming filling resistance
The effect of auxiliary, the filling resistance is produced by the structure of perforate.Here it is also suitable, overvoltage is higher, then can be better
Ground overcomes filling resistance.But overvoltage is likely to cause the crackle and/or rejected region in back electrode structure.Therefore it has been likely to
Profit, is laminated under ambient pressure or close ambient pressure.
Other advantages and characteristic of the solar energy module are illustrated according to preferred embodiment described below.
Description of the drawings
In the accompanying drawings：
Fig. 1 schematically shows sectional view of the back electrode structure in the plane interior orientation of semiconductor wafer solaode,
Wherein back electrode structure is completely by embedment polymer penetration；
Fig. 2 schematically shows the parts transversely sectional view of solar energy module of the invention；
Fig. 3 schematically shows the parts transversely sectional view of another solar energy module of the invention；
Fig. 4 schematically shows the parts transversely sectional view of another solar energy module of the invention；
Fig. 5 schematically shows the method for manufacturing solar energy module of the invention；
Fig. 6 schematically shows another method for manufacturing solar energy module of the invention；And
Fig. 7 schematically shows another method for manufacturing solar energy module of the invention.
Specific embodiment
Fig. 1 schematically shows the back electrode structure 11 of semiconductor wafer solaode in semiconductor wafer solar-electricity
The sectional view of the plane interior orientation in pond 10, wherein, back electrode structure 11 is permeated on the whole surface by embedment polymer 12.Half
Conductor chip solaode 10 is a part for solar energy module of the invention.Embedment polymer 12 guarantees semiconductor die
Piece solaode 10 and back side potted element（It is not shown in FIG）Between good attachment, the embedment polymer 12
The back electrode structure 11 that infiltration is made up of the sintered metal particle of perforate.The metallic particles of the sintering of back electrode structure 11 this
In schematically illustrated with black.Embedment polymer 12 is embedded in open hole, and embedment polymer 12 is illustrated here with white.
It is emphasized that here therefore modelling simultaneously illustrates dividing for the periodicity composition of metallic particles and open hole purely illustratively
Cloth.In the practical situation of microcosmic, the structure of this rule is there is usually no.
Embedment polymer 12 permeates the open space of back electrode structure 11 so that wetting zones are constituted, in the moistening
In region, the passivation layer of the moistening semiconductor wafer solaode 10 of polymer 12 is imbedded（Here it is not shown）.Moistening is referred to, buried
Enter the infiltration back electrode structure 11 of polymer 12, the passivation layer below back electrode structure 11 is penetrated into always, and pass through
The open space of back electrode structure 11 is observed on microcosmic and come in contact with passivation layer.Wetting zones relative to wetting zones and
The ratio of overlay area is that, more than 25%, in the overlay area, embedment polymer 12 is carried on the back without moistening passivation layer 17
Face electrode structure 11 does not contact but covers passivation layer 17.As shown in figure 1, in whole backside surface scope, both can be by the back of the body
Face electrode structure 11 realizes the structure of conduction, it is also possible to realized by embedment polymer 12 attached with what the conductive structure interweaved
The structure of the property.Because the structure of conductive structure and tack extends along backside surface jointly, semiconductor die can be both provided
Piece solaode 10 and back side potted element（Here it is not shown）Between stable complex, it is also possible to provide and there is good electricity
The semiconductor wafer solaode 10 of characteristic.
Fig. 2 schematically shows the parts transversely sectional view of a solar energy module of the invention 14.Solar energy module
14 include multiple semiconductor wafer solaodes 10, and one of semiconductor wafer solaode is partly illustrated here
10.Semiconductor wafer solaode 10 has semiconductor wafer 16, the passivation layer 17 being arranged on semiconductor wafer 16 and sets
Put the back electrode structure 11 on passivation layer 17（Here illustrated with black）.Back electrode structure 11 is connect by multiple local
Tactile region makes electrical contact with the semi-conducting material of semiconductor wafer 16, and wherein contact area is configured to the opening of passivation layer 17（Here
It is not shown）.Electrical-contact area is less than the 5% of backside surface.Back electrode structure 11 is completely by embedment polymer 12（Here with vain
Color is illustrated）Infiltration, so as to constitute wetting zones, in the wetting zones, imbeds the moistening passivation layer of polymer 12.Wetting zones
It is more than 25%, in overlay area, back electrode structure 11 relative to the ratio in the region being made up of wetting zones and overlay area
Cover passivation layer 17.Back side potted element 19 is set on the layer including back electrode structure 11 and embedment polymer 12, in the back of the body
Such region is usually formed between face electrode structure 11 and back side potted element 19, in such region, polymer is imbedded
12 do not permeate back electrode structure 11.Due to imbedding the moistening passivation layer 17 of polymer 12 and permeating back electrode structure 11 simultaneously
Contact back side potted element 19, it is ensured that form stable between semiconductor wafer solaode 10 and back side potted element 19
Complex.In addition solar energy module 14 has front encapsulating material 15, and the front encapsulating material 15 is arranged on semiconductor wafer
On 16.Front encapsulating material 15 for example includes a layer being made up of ethylene vinyl acetate and glass plate.
Fig. 3 schematically shows the parts transversely sectional view of another solar energy module of the invention 14.With in Fig. 2 one
Sample, partly illustrates here a semiconductor wafer solaode 10 in multiple semiconductor wafer solaodes 10, half
Conductor chip solaode 10 has semiconductor wafer 16, the passivation layer 17 being arranged on semiconductor wafer 16 and is arranged on blunt
Change the back electrode structure 11 on layer 17（Here illustrated with black）.The contact area that back electrode structure 11 passes through multiple local
Make electrical contact with the semi-conducting material of semiconductor wafer 16, wherein contact area is configured to the opening of passivation layer 17（Here do not show
Go out）, electrical-contact area less than backside surface 5%.Additionally, solar energy module 14 has front potted element 15, the front
Potted element 15 is arranged on semiconductor wafer 16.It is different from the solar energy module 14 shown in Fig. 2, the back of the body that figure 3 illustrates
Face electrode structure 11 is no to constitute coherent layer on passivation layer 17, but with the region 20 for being referred to as free space below.
Free space 20 constituted such region before contacting with semiconductor wafer solaode 10, in this region, passivation
Layer 17 exposes the part not covered by the back electrode structure 11 of perforate.Contacting with semiconductor wafer solaode 10
Afterwards, the one side of the passivation layer 17 is in free space 20, on the other hand by the back electrode structure 11 of penetration aperture by
Embedment polymer 12（Here illustrated with white）Moistening, so as to form wetting zones.Generally, wetting zones are relative to wetted area
The ratio of the combination of domain and overlay area is more than 25%, and in overlay area, back electrode structure 11 covers passivation layer 17.Embedment
Polymer 12 is so arranged on back electrode structure 11 or arranges together with back electrode structure 11 so that embedment polymer 12
Between back electrode structure 11 and back side potted element 19.
Fig. 4 schematically shows the parts transversely sectional view of another solar energy module of the invention 14.Above
As Fig. 2 and 3, solar energy module 14 has multiple semiconductor wafer solaodes 10, wherein partly illustrating here wherein
One semiconductor wafer solaode 10.Semiconductor wafer solaode 10 has semiconductor wafer 16, is arranged on and partly leads
Passivation layer 17 on body chip 16 and the back electrode structure 11 being arranged on passivation layer 17（Here illustrated with black）.Back side electricity
Pole structure 11 is made electrical contact with by the contact area of multiple local with the semi-conducting material of semiconductor wafer 16, wherein contact area structure
The opening of passivation layer 17, electrical-contact area is caused to be less than the 5% of backside surface.Additionally, solar energy module 14 is encapsulated with front
Element 15, the front potted element 15 is arranged on semiconductor wafer 16.With the solar energy module 14 shown in Fig. 2 and 3 not
Together, the solar energy module 14 that figure 4 illustrates has the back electrode structure 11 of the thickness with change, but with title below
For the region 20 of free space.Free space 20 constituted such area before contacting with semiconductor wafer solaode 10
Domain, in this region, passivation layer 17 exposes the part not covered by the back electrode structure 11 of perforate.With quasiconductor
After chip solaode 10 is contacted, on the other hand the one side of the passivation layer 17 is opened in free space 20 by infiltration
The back electrode structure 11 in hole is by embedment polymer 12（Here illustrated with white）Moistening, so as to form wetting zones.Generally,
Wetting zones are more than 25%, in overlay area, back electrode structure relative to the ratio of the combination of wetting zones and overlay area
11 cover passivation layer 17.Embedment polymer 12 is so arranged on back electrode structure 11 or sets together with back electrode structure
Put so that embedment polymer 12 is located between back electrode structure 11 and back side potted element 19.Can be with by the thickness for changing
Realize the permeabilities different to back electrode structure 11 to imbed polymer 12.In non-adhering zone 21, polymer 12 is imbedded
Without permeating or at least rarely permeating back electrode structure 11, so as to back electrode structure 11 covers or contact passivation layer, but
In the non-adhering zone 21, passivation layer 17 is without by the moistening of embedment polymer 12.In the non-adhering zone 21, back side electricity
The hole of pole structure 11 is filled being not embedded within polymer 12 with majority in the boundary region of passivation layer 17, and is formed in this micro-
The so-called overlay area observed in sight.This is so illustrated in the diagram, i.e. metallic particles is in non-adhering zone 21 with Lycoperdon polymorphum Vitt
Illustrate, rather than illustrated with the point of black.
In adhering zone 22, the embedment infiltration back electrode structure 11 of polymer 12, and passivation layer 17 is penetrated into always, and
And therefore on microcosmic observe can in wetting zones moistening passivation layer 17.The profit of the embedment moistening passivation layer 17 of polymer 12
Wet zone is reduced with the area ratio that wetting zones are compared with overlay area with the rising of thickness, in the overlay area
In, back electrode structure 11 covers passivation layer 17.Embedment polymer 12 can more quick and preferably permeate backplate knot
Structure 11 compared with other regions of back electrode structure 11 with the region that smaller layers are thick.Additionally, embedment polymer 12 goes back this
Sample is arranged on back electrode structure 11 so that embedment polymer 12 be located at back electrode structure 11 and back side potted element 19 it
Between, it is achieved thereby that overleaf on potted element 19 whole face attachment.
Fig. 5 schematically shows the method for manufacturing solar energy module of the invention.Methods described includes following step
Suddenly：Multiple semiconductor wafer solaodes 51 and lamination 52 are provided.Step 51 includes providing multiple semiconductor wafer solar energys
Battery, these semiconductor wafer solaodes are electrically connected and are connected into solaode string, and have the back side with backside surface respectively,
Wherein backside surface is passivated by the passivation layer surface of dielectric, and the back side electricity of the metallic particles for including sintering is arranged over the passivation layer
Pole structure, the back electrode structure of the metal is electric with the semi-conducting material of semiconductor wafer by the contact area of multiple local
Contacting, the contact area be configured to passivation layer opening and generally electrical-contact area account for backside surface ratio it is little
In 5%, preferably smaller than %2.Semiconductor wafer solaode also has front potted element, and the front potted element is arranged
On the semiconductor wafer.The front potted element can include embedment polymer and glass plate, glass or plastic foil, below
It is same in the step of explanation 52 that lamination process is performed to them.Step 52 include the back side by solar energy module is constituted with burying
The back side encapsulating structure for entering the polymer of polymer is laminated on the back side of solaode, so as to imbed polymer and quasiconductor
The back electrode structure of the metal of chip solaode contacts so that embedment polymer has wetted area after lamination 52
Domain, in these wetting zones, imbeds polymer moistening passivation layer so that wetting zones are relative to wetting zones and overlay area
Ratio be more than 25% preferably greater than 30%, especially preferred more than 50%, in the overlay area, back electrode structure cover
Passivation layer.Laminating parameters, such as pressure and the temperature change with the time are set if necessary, to reach wetness degree noted earlier.
Laminating parameters depend on the embedment polymer that back side encapsulating structure is used.If embedment polymer is, for example, organosilicon, layer
Pressure 52 can be carried out under room temperature and normal pressure.If necessary using the organosilicon for being added with sclerosing agent.Back side encapsulating structure
Embedment polymer can be identical or different with the embedment polymer of front encapsulating structure.These embedment polymer are preferably identical
's.
Fig. 6 schematically shows another method for manufacturing solar energy module of the invention.In the feelings of embodiment
Under condition, using EVA as embedment polymer.The method comprising the steps of：Multiple semiconductor wafer solaodes are provided
51, back side encapsulating structure 52a is set, it is heated to the first temperature 52b and is heated to second temperature 52c.Side in step 51 and Fig. 5
The step of method is identical.For the explanation of the step is therefore referring to the explanation to Fig. 5.In step 52a, back side encapsulating structure
It is arranged on the backside surface of multiple semiconductor wafer solaodes, so as to the back side encapsulating structure covers by entire surface these
Semiconductor wafer solaode.In step 52a（52b）In, multiple semiconductor wafer solaodes and back side encapsulating structure
It is heated to the first temperature.Particularly when it is ethylene vinyl acetate to imbed polymer, model of first temperature at 70 to 115 °C
In enclosing.Within the range, imbed polymer and there is the viscosity lower than at room temperature, it is possible to easily permeate backplate knot
Structure, and wetting zones are constituted with desired degree.Then execution step 52c, in this step, by multiple semiconductor wafer sun
Energy battery and back side encapsulating structure are heated to second temperature.Particularly when polymer is ethylene vinyl acetate, second temperature
In the range of 130 to 230 °C.In the temperature range, embedment polymer has the viscosity higher than at the first temperature, and
Thus harden so that can prevent from being flowed out from back electrode structure.Generally at solaode, embedment polymer and the back side
A kind of stable complex is realized between encapsulating structure.Step 52b and 52c are in laminating machine（laminator）In, for example
Caerus Systems, LLC company（U.S. Milford）Meier ICO-Laminator-28-18 in perform, wherein, remove
Pressure is also set up beyond temperature change.Pressure in the pressure chamber of laminating machine is, for example, 100000Pa to 300000Pa（Cross
Pressure）.But the pressure in the pressure chamber of laminating machine can also be such as 50000Pa（Relative to the negative pressure of environment）To 100000Pa
（Ambient pressure）.
Fig. 7 schematically shows another method for manufacturing solar energy module of the invention.In the embodiment
In the case of, using hot plastomer as embedment polymer.The method comprising the steps of：Multiple semiconductor wafer sun are provided
Energy battery 51, arranges back side encapsulating structure 52a, is heated to the first temperature 52b and is cooled to second temperature 52d.Step 51 and Fig. 5
In method the step it is identical.For the explanation of the step is therefore referring to the explanation to Fig. 5.In step 52a, by the back side
Encapsulating structure is arranged on the backside surface of multiple semiconductor wafer solaodes, so as to the back side encapsulating structure by entire surface
Cover these semiconductor wafer solaodes.In step 52a（52b）In, the plurality of semiconductor wafer solaode and
Back side encapsulating structure is heated to the first temperature.So select first temperature so that embedment polymer has than room temperature
Under low viscosity and deformable, can easily permeate back electrode structure and with desired degree structure so as to imbed polymer
Into wetting zones.Then execution step 52d, wherein by the plurality of semiconductor wafer solaode and back side encapsulating structure master
Move or be passively cooled to second temperature.So select second temperature so that embedment polymer is high at a temperature of having than first
Viscosity and no longer can deform.Ideally, second temperature is room temperature.By the temperature change, embedment polymer by
This hardening, that is, prevent from being flowed out from back electrode structure.Generally in solaode, embedment polymer and back side encapsulating structure
Between realize a kind of stable complex.Step 52b and 52d are performed in laminating machine, wherein, in addition to temperature change also
Pressure is set.Pressure in the pressure chamber of laminating machine is, for example, 100000Pa to 300000Pa（Overvoltage）.Step 52d can pass through
Solar energy module is taken out from laminating machine and is placed it in and realize under room temperature.
Other advantages and characteristic of the solar energy module are explained according to illustrated embodiments described below, but the example should not be limited
The system present invention.
Example
Multiple semiconductor wafer solaodes with front potted element and the back side of surface passivation are provided（With 3
6 " batteries of individual busbar）.The superiors of the side of passivation layer backside semiconductor wafer material are silicon nitride layers, the silicon nitride
The coefficient of refraction of layer is 2 ~ 2.1 in 633nm.Can be by Ferro（Cleveland city of the U.S.）Metal paste Ferro buied
CN53-200 is applied to thickness by silk screen print method<On 20 μm of silicon nitride layer.Particle size distribution passes through fineness instrument
（DIN53203 or DINEN21524 and ISO1524）It is determined that.Granularity is more than or equal to 12 μm（10th layer（Schliere, striped））Or
More than or equal to 20 μm（3rd layer）.Metal paste is applied on silicon nitride layer by silk screen printing.Silk screen（400 lines/inch；Directly
18 μm of footpath）With 45 ° of cone of coverage（Bespannungswinkel）Use.Thickness of the metal paste jelly above silk screen
For 15 μm.After metal paste is applied on silicon nitride layer, by semiconductor wafer solaode in 1.24 degree/hour
（Degree Celsius per hour）The calcination at a temperature of higher than 400 °C in incinerator.Perforate is set on silicon nitride layer after calcination
Back electrode structure.Semiconductor wafer solaode manufacture now is completed, and can be used.
The back side of semiconductor wafer solaode is coated with ethylene vinyl acetate thin film as embedment polymer
（Photocap FC280P/UF, can be bySpecialized Technology Resources,Inc.（The U.S.
Enfield）Buy）.The ethylene vinyl acetate thin film for being used has following characteristic：Fracture strength 18.5（2684）Mpa
（PSI）, bending moduluses that elongation is 700%, 10% be 14.8（2150）Mpa（PSI）, hardness be 80/22 Durometer A hardness/D,
It is 1.482, impact strength that transmittance is 93%, refractive index（Durchschlagfestigkeit）For 1400V/mil, volume resistance
Rate（spezifischen Durchgangswiderstand）For 5 × 1014Ohm/cm, UV limiting wave length is 360nm, Yi Ji
Tack on glass is 70-88N/10mm.Manufacturer Isovoltaic is set on ethylene vinyl acetate（Austria
Lebring）Icosolar AAA3554 as back side potted element.The semiconductor wafer solaode of this back coating
It is placed on Caerus Systems, LLC（U.S. Milford）In the Meier ICO-Laminator-28-18 of company.By the layer
Press takes 145 °C of temperature and twice vacuum pumping 4 minutes to.So that lamination machine cavity and lid vacuum pumping.Then will cover in 1 minute
It is vented to 80000Pa.The state keeps other 7 minutes.Then it is aerated to being laminated machine cavity and lid.Except uncapping, and by the sun
Energy module is taken out from lamination machine cavity and is placed at room temperature.
It is attached on the solaode of the lamination of solar energy module of the invention in order to test back side encapsulating structure
The property, carries out following tearing test in predetermined test strip.
In order to check adhesive strength, using Coesfeld（Dortmund, Germany）Measurer for pulling force Z10.At least one surveys
Strip is torn with about 180 ° of angle.The measurer for pulling force has arranged below：Speed：100mm/ minutes, shift motion：
300mm, and disruptive force recognition threshold：ΔF=20.Force threshold is set as 0.1N when record starts.Power extreme value（Terminate measurement）Adjust
It is whole to 95N.The solar energy module is so arranged and is tensioned in measurer for pulling force so that at least one test strip can be lucky
It is torn.The pulling force silk of measurer for pulling force is centrally located on the test strip just, and starts measurer for pulling force.When test strip fracture
And/or test strip exists<When being torn completely during 300nm, measurement terminates.After test of tearing, to described at least one test
Bar is taken pictures.
In solar energy module constructed in accordance, the such moistening passivation layer of embedment polymer, so as to constitute moistening
Region, imbeds polymer moistening passivation layer in wetting zones, and wetting zones are relative to by wetting zones and overlay area
The ratio in the region of composition is more than 25% preferably greater than 30%, and especially preferred more than 50%, in overlay area, passivation layer
Covered by back electrode structure, wherein it has been determined that the plane of disruption is not the inside of overleaf electrode structure, but positioned at quasiconductor
In wafer substrate.As solar energy module thus with the solaode in the back face metalization portion with silk screen printing
Characteristic shows, imbeds infiltration of the polymer to back face metalization portion and be achieved in that, i.e. guarantee the attachment of long-time stable.
Description of reference numerals
10 semiconductor wafer solaodes
11 back electrode structures
12 embedment polymer
14 solar energy modules
15 face potted elements
16 semiconductor wafers
17 passivation layers
19 back side potted elements
20 free spaces
21 non-adhering zones
22 adhering zones
51 provide multiple semiconductor wafer solaodes
52 laminations
52a arranges back side encapsulating structure
52b is heated to the first temperature
52c is heated to second temperature
52d is cooled to second temperature
Claims (34)
1. a kind of solar energy module (14), with front and back, the solar energy module (14) has the solar energy module (14)：
Multiple semiconductor wafer solaodes (10), the plurality of semiconductor wafer solaode (10) is electrically connected and is connected into the sun
Energy battery strings simultaneously have respectively the back side with backside surface, and the backside surface is blunt by surface by the passivation layer (17) of dielectric
Change, the back electrode structure (11) of the metallic particles comprising sintering, the back of the body of the metallic particles are set on the passivation layer (17)
Face electrode structure (11) is connected by the contact area of multiple local with the semi-conducting material electric contact of semiconductor wafer (16), institute
State contact area and be configured to the opening and generally electric contact area of the passivation layer (17) less than the backside surface
5%,
The positive front potted element (15) of solar energy module is constituted, and
The back side encapsulating structure (11) of the polymer at the back side of solar energy module is constituted, the back side encapsulating structure is poly- with embedment
Compound (12), the back electrode structure for imbedding polymer (12) and the metal of the semiconductor wafer solaode (10)
Contact,
Characterized in that,
It is described to imbed polymer (12) passivation layer (17) described in moistening in such a way：So that wetting zones are constituted, at this
Polymer (12) moistening passivation layer (17) is imbedded described in a little wetting zones, and the wetting zones are relative to by the moistening
The ratio in the region of region and overlay area composition is that, more than 20%, in the overlay area, the passivation layer (17) is by institute
State back electrode structure (11) covering.
2. solar energy module (14) according to claim 1, it is characterised in that the back electrode structure (11) of the metal
Percentage ratio compared with the backside surface is more than 80%.
3. solar energy module (14) according to claim 1 and 2, it is characterised in that the back electrode structure (11)
Resistivity≤1010-7Ohm·m。
4. solar energy module (14) according to claim 1 and 2, it is characterised in that back electrode structure (11) tool
There is the adhering zone (22) that thickness changes, the adhering zone (22), with less thickness, is somebody's turn to do compared with remaining region (21)
Thickness is less than 30 μm.
5. solar energy module (14) according to claim 4, it is characterised in that with embedment polymer (12) without moistening
The area ratio in the region of the wet passivation layer (17) is compared, the profit of passivation layer (17) described in embedment polymer (12) moistening
The area ratio of wet zone declines as the thickness of the back electrode structure (11) increases.
6. solar energy module (14) according to claim 1 and 2, it is characterised in that embedment polymer (12) is to hand over
Connection.
7. solar energy module (14) according to claim 1 and 2, it is characterised in that the passivation layer (17) is configured to thin
Stacking.
8. solar energy module (14) according to claim 7, it is characterised in that the thin layer is folded have add attached layer and/or
Conductive layer is used as the superiors.
9. solar energy module (14) according to claim 1 and 2, it is characterised in that the semiconductor wafer solar-electricity
The backside surface in pond (10) has free space (20) of the area ratio less than 20%, blunt described in the free space (20)
Change layer (17) not covered by the back electrode structure (11).
10. solar energy module (14) according to claim 1, it is characterised in that the contact area is configured to described blunt
Change the opening of layer (17) and generally electric contact area is less than the 2% of the backside surface.
11. solar energy modules (14) according to claim 1, it is characterised in that the wetting zones are relative to by described
The ratio in the region of wetting zones and overlay area composition is more than 35%.
12. solar energy modules (14) according to claim 11, it is characterised in that the wetting zones are relative to by described
The ratio in the region of wetting zones and overlay area composition is more than 50%.
13. solar energy modules (14) according to claim 2, it is characterised in that the back electrode structure of the metal
(11) percentage ratio compared with the backside surface is more than 90%.
14. solar energy modules (14) according to claim 13, it is characterised in that the back electrode structure of the metal
(11) percentage ratio compared with the backside surface is more than 95%.
15. solar energy modules (14) according to claim 3, it is characterised in that the electricity of the back electrode structure (11)
Resistance rate≤710-7Ohm·m。
16. solar energy modules (14) according to claim 15, it is characterised in that the electricity of the back electrode structure (11)
Resistance rate≤510-7Ohm·m。
17. solar energy modules (14) according to claim 4, it is characterised in that the thickness is less than 25 μm.
18. solar energy modules (14) according to claim 17, it is characterised in that the thickness is less than 20 μm.
19. solar energy modules (14) according to claim 17, it is characterised in that the thickness is less than 15 μm.
20. solar energy modules (14) according to claim 9, it is characterised in that the semiconductor wafer solaode
(10) backside surface has free space (20) of the area ratio less than 10%.
21. solar energy modules (14) according to claim 20, it is characterised in that the semiconductor wafer solaode
(10) backside surface has free space (20) of the area ratio less than 5%.
A kind of 22. methods for manufacturing solar energy module (14), the solar energy module (14) is described with front and back
Method has steps of：
Step (51) provides multiple semiconductor wafer solaodes (10), the plurality of semiconductor wafer solaode (10)
It is electrically connected and is connected into solaode string and there is respectively the back side, the back side has backside surface, and the backside surface passes through dielectric
Passivation layer (17) surface passivation, on the passivation layer (17) arrange include sintering metallic particles back electrode structure
(11), the back electrode structure (11) of the metallic particles is by the contact area of multiple local and the quasiconductor of semiconductor wafer (16)
Material electric contact is connected, and the contact area is configured to the opening of the passivation layer (17) and generally electrical-contact area accounts for the back of the body
The ratio on face surface is less than 5%；And
Step (52) will constitute the back side encapsulating structure of the polymer at the back side of solar energy module (14) together with embedment polymer
(12) be laminated on the back side of solaode (10), so as to described polymer (12) and the semiconductor wafer sun are imbedded
The back electrode structure (11) of the metal of energy battery (10) contacts,
Characterized in that, laminating parameters include with the temperature change and/or Laminator pressures of time in one way arranging, lead to
Cross so that it is described embedment polymer (12) moistening described in passivation layer (17), so as to constitute wetting zones, in the wetting zones,
Passivation layer (17) described in wherein described embedment polymer (12) moistening, the wetting zones relative to by the wetting zones and
The ratio in the region of overlay area composition be more than 20%, and wherein in the overlay area, the passivation layer (17) by
The back electrode structure (11) covers, wherein, the temperature change with the time is to be fixed in the embedment polymer
The variation pattern of temperature in lamination process on surface to be laminated, the Laminator pressures are the pressures of laminating machine in lamination process
Gas pressure in power chamber.
23. methods according to claim 22, it is characterised in that include being heated to the first temperature with the temperature change of time
(52a) and second temperature (52b) is heated to, at the first temperature, embedment polymer (12) is with than the viscosity under room temperature
Low viscosity, at the second temperature, embedment polymer (12) is with the high viscosity of the viscosity at a temperature of than described first.
24. methods according to claim 22 or 23, it is characterised in that so arrange with the temperature change of time：So that
Embedment polymer (12) at the first temperature passivation layer (17) described in moistening more than 25%, and the embedment polymer
(12) it is crosslinked at the second temperature.
25. methods according to claim 23, it is characterised in that the first temperature is in the range of 70 to 115 DEG C, and second is warm
Degree is in the range of 130 to 230 DEG C.
26. methods according to claim 22,23 and any one of 25 claim, it is characterised in that in lamination (52)
When, pressure is arranged in the range of 50000Pa to 100000Pa.
27. methods according to claim 22,23 and any one of 25 claim, it is characterised in that in lamination (52)
When, pressure is arranged in the range of 100000Pa to 300000Pa.
28. methods according to claim 22, it is characterised in that the contact area is configured to the passivation layer (17)
Opening and generally electrical-contact area account for the ratio of backside surface and are less than 2%.
29. methods according to claim 22, it is characterised in that the wetting zones relative to by the wetting zones and
The ratio in the region of overlay area composition is more than 35%.
30. methods according to claim 29, it is characterised in that the wetting zones relative to by the wetting zones and
The ratio in the region of overlay area composition is more than 50%.
31. methods according to claim 24, it is characterised in that described so that embedment polymer (12) is warm first
The lower passivation layer (17) described in moistening of degree is more than 30%.
32. methods according to claim 31, it is characterised in that described so that embedment polymer (12) is warm first
The lower passivation layer (17) described in moistening of degree is more than 50%.
33. methods according to claim 25, it is characterised in that first temperature in the range of 80 to 100 DEG C, institute
Second temperature is stated in the range of 130 to 200 DEG C.
34. methods according to claim 33, it is characterised in that first temperature in the range of 90 to 100 DEG C, institute
Second temperature is stated in the range of 140 to 170 DEG C.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011055148A DE102011055148A1 (en) | 2011-11-08 | 2011-11-08 | Solar module, has embedding polymer moistening passivation film such that set of wetting regions is formed, where portion of wetting regions is made of covering areas, in which passivation film is covered |
| DE102011055148.4 | 2011-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103094386A CN103094386A (en) | 2013-05-08 |
| CN103094386B true CN103094386B (en) | 2017-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210445485.6A Active CN103094386B (en) | 2011-11-08 | 2012-11-08 | Solar module and process for preparing same |
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| DE (1) | DE102011055148A1 (en) |
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| ES2790729T3 (en) * | 2017-04-14 | 2020-10-29 | Meyer Burger Switzerland Ag | Photovoltaic module, photovoltaic encapsulant and production method of a photovoltaic module |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2471732A (en) * | 2009-06-22 | 2011-01-12 | Rec Solar As | Back surface passivation solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4421589A (en) * | 1982-07-13 | 1983-12-20 | Spire Corporation | Laminator for encapsulating multilayer laminate assembly |
| JP3098003B2 (en) * | 1998-09-24 | 2000-10-10 | 日清紡績株式会社 | Laminating equipment for solar cells |
| US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US7554031B2 (en) * | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
| JP2008126407A (en) * | 2006-11-16 | 2008-06-05 | Npc Inc | Laminator |
| EP2239789A1 (en) * | 2009-04-08 | 2010-10-13 | SAPHIRE ApS | Laminating assembly |
| WO2011110231A1 (en) * | 2010-03-12 | 2011-09-15 | Q-Cells Se | Method and in-line production system for the production of solar cells |
-
2011
- 2011-11-08 DE DE102011055148A patent/DE102011055148A1/en not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2471732A (en) * | 2009-06-22 | 2011-01-12 | Rec Solar As | Back surface passivation solar cell |
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| DE102011055148A1 (en) | 2013-05-08 |
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