CN103094288B - The method of photo-sensitive cell and measurement incident light - Google Patents
The method of photo-sensitive cell and measurement incident light Download PDFInfo
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- CN103094288B CN103094288B CN201110343800.XA CN201110343800A CN103094288B CN 103094288 B CN103094288 B CN 103094288B CN 201110343800 A CN201110343800 A CN 201110343800A CN 103094288 B CN103094288 B CN 103094288B
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Abstract
The present invention relates to a kind of photo-sensitive cell, comprise the first well construction, light shield layer and the second well construction.First well construction is positioned at first substrate.Light shield layer is configured on first substrate.First well construction of light shield layer cover part also exposes the first well construction of other parts.Be blocked the contiguous periphery being blocked each the first well construction that layer exposes of the first well construction that layer covers.Be blocked described first well construction that layer exposes be suitable for by an incident light irradiates and produce the first photoelectric current.Second well construction is positioned at second substrate and is suitable for being subject to incident light and irradiates and produce the second photoelectric current, and wherein the second well construction surface area summation be exposed on second substrate equals in fact the first well construction exposure surface area summation on the first substrate that light shield layer exposes.The present invention also proposes a kind of method measuring incident light.
Description
Technical field
The present invention relates to a kind of photo-sensitive cell, particularly a kind of photo-sensitive cell of spectrum signal of sensing incident light, and measure the method for incident light.
Background technology
Due to silica-based optical diode (silicon photodiodes) or the cost of manufacture of photistor (phototransistor) comparatively cheap and be easy to use, therefore silica-based optical diode or photistor can be used in the object of sensing ambient light usually, that is general ambient light sensor.In addition, silica-based optical diode or photistor are also often used on general integrated circuit.
But, normally need to adopt optical filter (as: IRpass filter or IR filter) just preferably can sense image under varying environment respectively using silicon as the photoreceptor of base material.Specifically, the wave-length coverage that can be able to sense compared with human eye due to the wave-length coverage that can sense as the photoreceptor of base material using silicon is wide, therefore under general environment light source, it is except sensing except visible ray, also can will sense infrared light simultaneously, thus, using silicon as the photoreceptor of base material sense image noise just can increase.Similarly, under comparatively dim environment, if when directly sensing as the photoreceptor of base material using silicon, can receive the relation of visible ray because of photoreceptor, and make image have higher noise ratio.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, propose a kind of photo-sensitive cell, it can the spectrum signal of sensing incident light.
The present invention separately proposes a kind of method measuring incident light, and it can measure the spectrum signal of incident light.
Other object of the present invention and advantage can be further understood from technical characteristic disclosed in this invention.
For reaching one of above-mentioned or partly or entirely object or other object, one embodiment of the invention provide a kind of photo-sensitive cell, comprise multiple first well construction, a light shield layer and multiple second well construction.First well construction is positioned at a first substrate.Light shield layer is configured on first substrate, wherein light shield layer cover part the first well construction and expose the first well construction of other parts.In addition, be blocked the contiguous periphery being blocked each the first well construction that layer exposes of described first well construction that layer covers, be wherein blocked described first well construction that layer exposes and be suitable for by an incident light irradiates and produce one first photoelectric current.Second well construction is positioned at a second substrate and is suitable for being subject to incident light and irradiates and produce one second photoelectric current, and the wherein said second well construction surface area summation be exposed on second substrate equals in fact the first well construction exposure surface area summation on the first substrate that light shield layer exposes.
In an embodiment of the present invention, photo-sensitive cell is suitable for the one first spectrum signal and the one second spectrum signal that obtain incident light according to the first photoelectric current and the second photoelectric current respectively.In an embodiment of the present invention, photo-sensitive cell is suitable for the first spectrum signal and the second spectrum signal being carried out a calculation process to obtain one the 3rd spectrum signal of incident light.In an embodiment of the present invention, the 3rd spectrum signal comprises an infrared light spectrum signal.
In an embodiment of the present invention, photo-sensitive cell more comprises a signal processing circuit, in order to receive the first photoelectric current and the second photoelectric current, and carries out a calculation process to the first photoelectric current and the second photoelectric current, to know a spectrum signal of incident light.In an embodiment of the present invention, signal processing circuit comprises a multiplexer, a signal converter and a processing unit.Multiplexer at least has a first input end, one second input and an output, wherein be blocked the first well construction that layer exposes and be suitable for being electrically connected to the first input end of multiplexer to receive the first photoelectric current, and the second well construction is electrically connected to the second input of multiplexer to receive the second photoelectric current.Signal converter has an input and an output, and wherein the output of multiplexer is electrically connected to the input of signal converter.Processing unit has an input, and wherein the output of signal converter is electrically connected to the input of processing unit.
In an embodiment of the present invention, first substrate and second substrate are essentially same substrate.
In an embodiment of the present invention, the first well construction being blocked layer covering is suitable for being electrically connected to an earthing potential.
In an embodiment of the present invention, the shape of each opening of the first well construction that light shield layer exposes comprises a square aperture or a polygonal-shaped openings.
In an embodiment of the present invention, be blocked described first well construction that layer covers and be blocked described first well construction that layer exposes and be staggered.
In an embodiment of the present invention, described first well construction being blocked layer covering is located on the periphery being blocked each described first well construction that layer exposes.
Another embodiment of the present invention proposes a kind of method measuring incident light, and it is applicable to make a photo-sensitive cell measure an incident light.Photo-sensitive cell comprises multiple first well construction, a light shield layer and multiple second well construction.First well construction of light shield layer cover part also exposes the first well construction of other parts, and is blocked the contiguous periphery being blocked each the first well construction that layer exposes of the first well construction that layer covers.Specifically, the method measuring incident light at least comprises the following steps.First, described first well construction light shield layer being exposed produces one first photoelectric current by incident light irradiates.Come again, make described second well construction produce one second photoelectric current by incident light irradiates, the wherein said second well construction surface area summation be exposed on second substrate equal in fact light shield layer expose described first well construction and be exposed to surface area summation on first substrate.Then, according to the first photoelectric current and the second photoelectric current to obtain the spectrum signal of incident light.
In an embodiment of the present invention, can comprise the following steps with the method for the spectrum signal knowing incident light according to the first photoelectric current and the second photoelectric current.First, use a signal processing circuit to receive the first photoelectric current and the second photoelectric current.Then, recycling signal processing circuit process first photoelectric current and the second photoelectric current, to obtain one first spectrum signal and the one second spectrum signal of incident light respectively.
In an embodiment of the present invention, the method measuring incident light more comprises carries out a calculation process by the first spectrum signal and the second spectrum signal, to obtain an infrared light spectrum signal of incident light.In an alternative embodiment of the invention, measure the method for incident light more to comprise and the second spectrum signal is deducted the first spectrum signal, to obtain infrared light spectrum signal.In an embodiment of the present invention, the method measuring incident light more comprises is divided by the first spectrum signal and the second spectrum signal, to obtain infrared light spectrum signal.
In an embodiment of the present invention, the method measuring incident light more comprises the first well construction making to be blocked layer covering and is electrically connected to an earthing potential.
Yet another embodiment of the invention proposes a kind of photo-sensitive cell, and it comprises multiple first well construction, isolated well construction and multiple second well construction.First well construction is positioned at a first substrate.Isolated well construction to be doped in first substrate and to be positioned at the periphery of each first well construction, and to separate described first well construction, wherein the first well construction is suitable for by an incident light irradiates and produces one first photoelectric current.Second well construction is positioned at a second substrate and is suitable for being subject to incident light and irradiates and produce one second photoelectric current, and wherein the second well construction surface area summation be exposed on second substrate equals in fact the first well construction exposure surface area summation on the first substrate.
In an embodiment of the present invention, the well depth of isolated well construction is greater than in fact the well depth of the first well construction.
In an embodiment of the present invention, the wide well being less than or equal in fact the first well construction of the well of isolated well construction is wide.
In an embodiment of the present invention, the ion doping concentration of isolated well construction or doping type are different in essence in the ion doping concentration of the first well construction or doping type.
In an embodiment of the present invention, isolated well construction is suitable for being electrically connected to an earthing potential.
In an embodiment of the present invention, isolated well construction is located on the periphery of the first well construction described in each, to separate described first well construction.
Another embodiment of the present invention proposes a kind of method measuring incident light, and it at least comprises the following steps.First, make multiple first well construction produce one first photoelectric current by incident light irradiates, and described first well construction separate by the isolated well construction, wherein isolated well construction is doped in the periphery of each first well construction.Afterwards, make multiple second well construction produce one second photoelectric current by incident light irradiates, wherein said second well construction is equaled in fact by the surface area summation that incident light irradiates the surface area summation that described first well construction irradiated by incident light.Then, according to the first photoelectric current and the second photoelectric current to obtain the spectrum signal of incident light.
In an embodiment of the present invention, comprise the following steps with the method for the spectrum signal knowing incident light according to the first photoelectric current and the second photoelectric current.First, use a signal processing circuit to receive the first photoelectric current and the second photoelectric current.Afterwards, utilize signal processing circuit process first photoelectric current and the second photoelectric current, to obtain one first spectrum signal and the one second spectrum signal of incident light respectively.
In an embodiment of the present invention, the method measuring incident light more comprises carries out a calculation process by the first spectrum signal and the second spectrum signal, to obtain an infrared light spectrum signal of incident light.
In an embodiment of the present invention, measure the method for incident light more to comprise and the second spectrum signal is deducted the first spectrum signal, to obtain infrared light spectrum signal.
In an embodiment of the present invention, the method measuring incident light more comprises is divided by the first spectrum signal and the second spectrum signal, to obtain infrared light spectrum signal.
In an embodiment of the present invention, the method measuring incident light more comprises makes isolated well construction be electrically connected to an earthing potential.
Based on above-mentioned, embodiments of the invention at least have following characteristics.First, can utilize light shield layer or isolated well construction that the first well construction part is covered or separated between two, to make the impact not being vulnerable to the first adjacent well construction by the first well construction that incident light irradiates, be wherein suitable for generation first photoelectric current by the first well construction that incident light irradiates.Then, the second well construction is made to produce the second photoelectric current by incident light irradiates, wherein the second well construction by incident light irradiate surface area summation equal in fact light shield layer institute expose the first well construction by incident light irradiation surface area summation, by this, photo-sensitive cell just just can know the spectrum signal of incident light by processing the first photoelectric current and the second photoelectric current.The present embodiment also proposes a kind of method for measurement being applicable to above-mentioned photo-sensitive cell.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate institute's accompanying drawings to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the photo-sensitive cell of one embodiment of the invention;
The cut-away view that the AA ' line that Fig. 2 is Fig. 1 illustrates;
The cut-away view that the BB ' line that Fig. 3 is Fig. 1 illustrates;
Fig. 4 is the circuit diagram of Fig. 1;
Fig. 5 A is the first photoelectric current and the corresponding spectrogram produced of the second photoelectric current of Fig. 1;
Fig. 5 B and Fig. 5 C carry out the spectrogram produced corresponding to different calculation process respectively to the first spectrum signal of Fig. 5 A and the second spectrum signal;
Fig. 6 is the schematic diagram of the photo-sensitive cell of another embodiment of the present invention;
Fig. 7 is the schematic diagram of the photo-sensitive cell of further embodiment of this invention;
Fig. 8 is the schematic diagram of the present invention's more photo-sensitive cell of an embodiment;
The cut-away view that the CC ' line that Fig. 9 is Fig. 8 illustrates;
The cut-away view that the DD ' line that Figure 10 is Fig. 8 illustrates.
Symbol description in figure
100,100a, 100b photo-sensitive cell
110,210 first well constructions
110a is blocked the first well construction that layer covers
110b is blocked the first well construction that layer exposes
120,120 ' light shield layer
120a, 120b opening
130,230 second well constructions
140,240 first substrates
140a, 240a electronics electricity hole pair
150,250 second substrates
160 signal processing circuits
162 multiplexers
164 signal converters
166 processing units
162a first input end
162b second input
162c output
164a input
164b output
166a input
220 isolated well constructions
P1, P2, P3 the evolving path
A1 surface area
A2 surface area
H1, H2 well depth
I
1first photoelectric current
I
2second photoelectric current
W1, W2 well is wide
L1 incident light
S1 first spectrum signal
S2 second spectrum signal
S3 the 3rd spectrum signal
Embodiment
Aforementioned and other technology contents, feature and effect for the present invention, in the following detailed description coordinated with reference to a preferred embodiment of accompanying drawing, can clearly present.The direction term mentioned in following examples such as: upper and lower, left and right, front or rear etc., is only the direction with reference to annexed drawings.Therefore, the direction term of use is used to illustrate and is not used for limiting the present invention.
Fig. 1 is the schematic diagram of the photo-sensitive cell of one embodiment of the invention, the cut-away view that the AA ' line that Fig. 2 is Fig. 1 illustrates, and the cut-away view that the BB ' line that Fig. 3 is Fig. 1 illustrates.Please also refer to Fig. 1, Fig. 2 and Fig. 3, the photo-sensitive cell 100 of the present embodiment comprises multiple first well construction 110, light shield layer 120 and multiple second well construction 130.First well construction 110 is positioned at a first substrate 140.In the present embodiment, first substrate 140 can be a P type semiconductor substrate (as: P-type silicon substrate), and the first well construction 110 then can be N-type well layer (n-type wells), but the present invention is not limited to this.In other embodiment, first substrate 140 also can be a N type semiconductor substrate (as: N-type silicon substrate), first well construction 110 then may correspond to and is designed to p type wells layer (p-type wells), the demand of this partial visual user and design and determine.In the present embodiment, the mode that first well construction 110 is formed at first substrate 140 can be that N-type ion (n-type ions) is doped in first substrate 140 by the mode adopting ion cloth to plant, with formed as Fig. 1 and Fig. 2 the first well construction 110 of illustrating.In other embodiment, user also can adopt other processing procedure mode by N-type ion doping in first substrate 140 to form the first well construction 110, above-mentioned is only that a kind of manufacturing method thereof is described, but is not limited to this.It is worth mentioning that, first substrate 140 also can be essential silicon substrate (intrinsic silicon substrate).
In addition, light shield layer 120 is configured on first substrate 140, wherein light shield layer 120 cover part the first well construction 110 and expose the first well construction 110 of other parts, as shown in Figures 1 and 2.In the present embodiment, being blocked the described first well construction 110a that layer 120 covers is the contiguous periphery being blocked each the first well construction 110b that layer 120 exposes, and is blocked the described first well construction 110b that layer 120 exposes and is suitable for by an incident light L1 irradiates and produces one first photoelectric current I
1.Specifically, incident light L1 can be general marginal ray, and its wavelength can comprise visible light wave range, infrared band or ultraviolet light wave band.In addition, light shield layer 120 can be adopt metal material or other screening optical activity preferably material, to avoid light by light shield layer 120.
Specifically, when incident light L1 irradiates in photo-sensitive cell 100, because first substrate 140 is semiconductor substrate (as: silicon substrate), therefore the photon of incident light L1 just can absorb by first substrate 140 and the generation electronics of correspondence electricity hole to (hole-electro pair).For the wavelength (as: 400 ~ 700nm) of general visible ray, what its corresponding electronics electricity hole produced was right be approximately by absorption distance (absorption distance) 3.4 μm or be less than 3.4 μm, that is electronics electricity hole to transmission 3.4 μm or be less than 3.4 μm distance in just can be absorbed by first substrate 140 and compound (recombination) again.Relatively, what the electronics electricity hole generated corresponding to the light that wavelength is longer was right just can be longer by absorption distance (absorption distance).
For example, if with the wavelength illumination of 800nm when the first substrate 140, its corresponding electronics electricity hole produced to the distance that absorbs by first substrate 140 be approximately 8 μm; With the wavelength illumination of 900nm when the first substrate 140, its corresponding electronics electricity hole produced to the distance that absorbs by first substrate 140 be approximately 22 μm; With the wavelength illumination of 1000nm when the first substrate 140, its corresponding electronics electricity hole produced to the distance that absorbs by first substrate 140 be then approximately 93 μm.In other words, when the wavelength of incident light L1 is longer, electronics electricity hole just can be longer to the distance can transmitted in first substrate 140.
Based on above-mentioned mechanism, refer again to Fig. 2, when incident light L1 enters the first substrate 140 be not blocked under the first well construction 110b that layer 120 covers, the photon of incident light L1 just can absorb by first substrate 140 and in be not blocked layer 120 produce electronics electricity hole accordingly to 140a below the first well construction 110b of covering, as shown in Figure 2.Now, the described electronics electricity hole produced because incident light L1 irradiates just can be spread everywhere to 140a, the evolving path P1, P2, P3 as Figure 2 illustrates, and is passed to the first well construction 110, and then produces photoelectric current.It should be noted that, because the wave-length coverage of incident light L1 is not particularly limited, therefore it may include visible wavelength and infrared light wavelength simultaneously, thus, the corresponding electronics electricity hole produced of infrared light wavelength is belonged to being just passed to contiguous the first well construction 110a being blocked layer 120 and covering, the evolving path P2, P3 as Figure 2 illustrates in incident light L1.
In the present embodiment, be not blocked the first well construction 110b that layer 120 covers carry out being electrically connected (as: parallel connection) just exportable aforesaid first photoelectric current I by above-mentioned
1it should be noted that, the described first well construction 110a covered owing to being blocked layer 120 be contiguous be blocked each the first well construction 110b that layer 120 exposes periphery (as Fig. 1 illustrate be blocked layer 120 cover as described in the first well construction 110a be blocked layer 120 expose as described in the first well construction 110b staggered enforcement aspect between two), therefore be blocked the first well construction 110b that layer 120 exposes and just not easily collect the electronics electricity hole pair produced below the first contiguous well construction 110b, and be affected.In the present embodiment, preferably quality is sensed in order to photo-sensitive cell 100 can be made to have, the the first well construction 110a being blocked layer 120 covering can be electrically connected to an earthing potential, and then avoids the photoelectron collected by the first well construction 110a to affect the electrical performance of photo-sensitive cell 100.
In addition, the second well construction 130 is positioned at a second substrate 150 and is suitable for being subject to incident light L1 and irradiates and produce one second photoelectric current I
2, the wherein said second well construction 130 surface area A2 summation be exposed on second substrate 150 equals in fact the first well construction 110b that light shield layer 120 exposes and is exposed to surface area A1 summation on first substrate 140, as shown in Figures 1 and 3.In the present embodiment, the second well construction 130 optionally adopts the structure identical with aforesaid first well construction 110 and generation type, and with aforementioned comparatively unlike: the second well construction 130 and need not cover by aforesaid light shield layer 120, as shown in Figure 3.Thus, each second well construction is except collecting the electric hole of the electronics produced below itself to except 140a, also can collect electronics electricity hole that the second contiguous well construction 130 produces to 140a, its reason is: belong to the corresponding electronics electricity hole produced of infrared band in incident light L1 and can have 140a far away from absorption distance (as: the evolving path P2, P3).
Similarly, multiple second well constructions 130 second substrate 150 being subject to incident light L1 irradiation are carried out being electrically connected (as: parallel connection) just exportable aforesaid first photoelectric current I
2wherein the second well construction 130 surface area A2 summation be exposed on second substrate 150 can approximate greatly in fact the first well construction 110b that light shield layer 120 exposes and is exposed to surface area A1 summation on first substrate 140, alternatively the second well construction 130 accept surface area A2 summation that incident light L1 irradiates can approximate greatly in fact light shield layer 120 expose the first well construction 110b and accept the surface area A1 summation that incident light L1 irradiates.
In the present embodiment, photo-sensitive cell 100 can according to aforesaid first photoelectric current I
1with the second photoelectric current I
2and obtain one first spectrum signal S1 and the one second spectrum signal S2 of incident light respectively, as Fig. 5 A illustrate, wherein Fig. 5 A is the first photoelectric current I of Fig. 1
1with the second photoelectric current I
2the corresponding spectrogram produced.Now, first spectrum signal S1 and the second spectrum signal S2 can be carried out a calculation process to obtain one the 3rd spectrum signal S3 of incident light by photo-sensitive cell 100, wherein this calculation process can be that the second spectrum signal S2 is deducted the first spectrum signal S1, or by the first spectrum signal S1 divided by the second spectrum signal S2, as shown in Fig. 5 B or Fig. 5 C, wherein Fig. 5 B and Fig. 5 C are respectively and carry out to the first spectrum signal of Fig. 5 A and the second spectrum signal the spectrogram that produces corresponding to different calculation process, but aforesaid calculation process is not limited only to this, demand according to user also can be other with design may calculation process mode.In the present embodiment, the 3rd spectrum signal S3 by obtaining after carrying out signal process to the first spectrum signal S1 and the second spectrum signal S2 can be an infrared light spectrum signal.
Specifically, photo-sensitive cell 100 can comprise a signal processing circuit 160, in order to receive the first photoelectric current I
1with the second photoelectric current I
2, and to the first photoelectric current I
1with the second photoelectric current I
2carry out aforesaid calculation process, to know a spectrum signal (the 3rd spectrum signal S3 as the aforementioned) of incident light L1, as shown in Figure 4, wherein Fig. 4 is the circuit diagram of the photo-sensitive cell of Fig. 1.Specifically, signal processing circuit 160 can comprise multiplexer 162, signal converter 164 and a processing unit 166.In the present embodiment, multiplexer 162 at least has a first input end 162a, one second input 162b and an output 162c, wherein be blocked the first well construction 110b that layer 120 exposes to be suitable for being electrically connected with the first input end 162a of multiplexer 162, to receive aforesaid first photoelectric current I
1, and the second well construction 130 is suitable for being electrically connected with the second input 162b of multiplexer 162, to receive aforesaid second photoelectric current I
2.
In addition, signal converter 164 has an an input 164a and output 164b, and wherein the output 162c of multiplexer 162 is electrically connected to the input 164a of signal converter 164, as shown in Figure 4.In the present embodiment, signal converter 164 can be the transducer (A/D converter) of analog-to-digital, is suitable for the first photoelectric current I
1signal and the second photoelectric current I
2signal changes into digital signal.Please continue to refer to Fig. 4, processing unit 166 has an input 166a, and wherein the output 164b of signal converter 164 is electrically connected to the input 166a of processing unit 166.In the present embodiment, processing unit 166 can be a hardware (as: processor, personal computer) or a software (as: signal process software, signal analysis software).
Based on above-mentioned known, the photo-sensitive cell 100 of the present embodiment first can utilize the first well construction 110a of light shield layer 120 cover part and expose the first well construction 110b of remainder, wherein be blocked the contiguous periphery being blocked each the first well construction 110b that layer 120 exposes of the first well construction 110a that layer 120 covers, the first well construction 110b exposed to make to be blocked layer 120 produces the first photoelectric current I by incident light L1 irradiates
1.Due to the first well construction 110a contiguous (as Fig. 1 illustrate be staggered) the first well construction 110b, and be coated with light shield layer 110 above the first well construction 110a, therefore incident light L1 just can not expose to the below place of the first well construction 110a, so just can not produce in this place electronics electricity hole on and contiguous the first well construction 110b of impact.Simultaneously, photo-sensitive cell 100 also can make the second well construction 130 produce one second photoelectric current I by incident light L1 irradiates
2wherein the second well construction 130 by the surface area A2 summation that incident light L1 irradiates equal in fact light shield layer 120 expose the surface area A1 summation that the first well construction 110 irradiates by incident light L 1, and the second well construction 130 is adjacent between two, therefore, by processing the first photoelectric current I
1with the second photoelectric current I
2just the spectrum signal (the 3rd spectrum signal S3 as the aforementioned) of incident light can be known.
In addition, in above-mentioned photo-sensitive cell 100, first substrate 140 and second substrate 150 can belong in fact a same substrate or belong to different substrate, the demand of this partial visual user and determining.In the present embodiment, the shape of each opening 120a of the first well construction 110b that aforesaid light shield layer 120 exposes can be a square aperture, as shown in Figure 1, in other embodiment, it also may be the opening of other shape, as: circle, triangle, trapezoidal, pentagon or hexagon, this part can be determined according to the demand of user.
In addition, in order to the impact (such as: avoid collecting the electronics electricity hole that produces below the first contiguous well construction 110b to) that the first well construction 110b can be made more not to be vulnerable to adjacent first well construction 110b, be blocked the first well construction 110a configuration mode that also ring can be adopted to establish that layer 120 covers and be arranged at the periphery being blocked each first well construction 110b that layer 120 exposes, as Fig. 6 the aspect of the photo-sensitive cell 100a of another embodiment that illustrates.It should be noted that, the the first well construction 110b exposed owing to being blocked layer 120 is only the summation of the surface area A1 of four blocks, therefore, based on above-mentioned principle and mechanism, relatively, second well construction 130 can coordinate the summation of the surface area A2 being adjusted to four blocks, wherein surface area A1 and surface area A2 can essence identical, as shown in Figure 6.Thus, photo-sensitive cell 100a is also by the first photoelectric current I
1with the second photoelectric current I
2carry out calculation process and learn the spectrum signal of incident light L1.
Fig. 7 is the schematic diagram of the photo-sensitive cell of further embodiment of this invention.Please also refer to Fig. 1, Fig. 6 and Fig. 7, the photo-sensitive cell 100b of the present embodiment adopts the configuration and principle being same as photo-sensitive cell 100,100a, the two difference is: the opening 120b of light shield layer 120 ' adopts hexagonal enforcement aspect, as aforementioned, the opening 120b of light shield layer 120 ' can adjust the shape of opening 120b slightly according to the demand of user.
Similarly, be same as the configuration and principle of photo-sensitive cell 100,100a because photo-sensitive cell 100b adopts, therefore, photo-sensitive cell 100b is by the first photoelectric current I
1with the second photoelectric current I
2carry out calculation process and learn the spectrum signal of incident light L1.
Based on above-mentioned, the present embodiment also can propose a kind of method measuring incident light, and it is applicable to make aforesaid photo-sensitive cell 100,100a, 100b measure aforesaid incident light L1.First, the first well construction 110b that light shield layer 120,120 ' can be made to expose produces the first photoelectric current I by incident light L1 irradiates
1.Meanwhile, the second well construction 130 is made to produce the second photoelectric current I by incident light L1 irradiates
2, wherein the second well construction 130 surface area A2 summation be exposed on second substrate 150 approximates in fact greatly the first well construction 110b that light shield layer 120,120 ' exposes and is exposed to surface area A1 summation on first substrate 140.Then, can according to the first photoelectric current I
1with the second photoelectric current I
2to obtain the spectrum signal of incident light L1.
In aforesaid method, according to the first photoelectric current I
1with the second photoelectric current I
2to know that the method for the spectrum signal of incident light L1 can first use aforesaid signal processing circuit 160 to receive the first photoelectric current I
1with the second photoelectric current I
2.Afterwards, recycle signal processing circuit 160 and process the first photoelectric current I
1with the second photoelectric current I
2, to obtain the first spectrum signal S1 and the second spectrum signal S2 of incident light L1 respectively, as the description of previous embodiment.
In addition, the first photoelectric current I is processed
1with the second photoelectric current I
2method first the first spectrum signal S1 and the second spectrum signal S2 can be carried out a calculation process, to obtain an infrared light spectrum signal of incident light L1.In the present embodiment, the mode of calculation process can be adopt the second spectrum signal S2 to deduct the first spectrum signal S1, to obtain infrared light spectrum signal S3, as earlier figures 5B illustrate and illustrate; Or be the first spectrum signal S1 and the second spectrum signal S2 can be divided by and carry out normalization computing, to obtain infrared light spectrum signal S3, as earlier figures 5C illustrate and illustrate.
Fig. 8 is the schematic diagram of the present invention's more photo-sensitive cell of an embodiment, the cut-away view that the CC ' line that Fig. 9 is Fig. 8 illustrates, and the cut-away view that the DD ' line that Figure 10 is Fig. 8 illustrates.Please first simultaneously with reference to figure 8 and Fig. 9, the photo-sensitive cell 200 of the present embodiment comprises multiple first well construction 210, isolated well construction 220 and multiple second well construction 230.First well construction 210 is positioned at a first substrate 240.In the present embodiment, first substrate 240 can be a P type semiconductor substrate (as: P-type silicon substrate), first well construction 210 then can be N-type well layer (n-typewells), but the present invention is not limited to this, in other embodiment, first substrate 240 can be a N type semiconductor substrate (as: N-type silicon substrate), first well construction 210 then can be p type wells layer (p-type wells), the demand of this partial visual user and design and determine.
In the present embodiment, the mode that first well construction 210 is formed at first substrate 240 can be that N-type ion (n-type ions) is doped in first substrate 240 by the mode adopting ion cloth to plant, with formed as Fig. 8 and Fig. 9 the first well construction 210 of illustrating, in other embodiment, user also can adopt other processing procedure mode by N-type ion doping in first substrate 240 to form the first well construction 210, above-mentioned is only that a kind of manufacturing method thereof is described, but is not limited to this.
In addition, isolated well construction 220 to be doped in first substrate 240 and to be positioned at the periphery of each first well construction 210, to separate described first well construction 210, as shown in Fig. 8 and Fig. 9, the first well construction 210 that wherein isolated well construction 220 is separated is suitable for by an incident light L1 irradiates and produces one first photoelectric current I
1.Similarly, when incident light L1 irradiates in photo-sensitive cell 100, the first well construction 210 times convenience adjacent between two can produce electronics electricity hole to 240a, therefore in order to avoid or reduce the electronics electricity hole produced below the first well construction 210 and can be passed to the first adjacent well construction 210 to 240a, therefore the present embodiment uses isolated well construction 220 to separate the first adjacent between two well construction 210 especially, thus, just the electronics electricity hole produced below the first well construction 210 can be avoided or reduce and the first adjacent well construction 210 can be passed to 240a, and the first adjacent well construction 210 is impacted.In the present embodiment, the first well construction 210 that above-mentioned isolated well construction 220 is separated is carried out be electrically connected (as: parallel connection) just exportable aforesaid first photoelectric current I
1.
Specifically, in order to effectively avoid the electronics electricity hole produced below the first well construction 210 to be passed to the first adjacent well construction 210 to 240a, the well depth H2 of isolated well construction 220 can be greater than in fact the well depth H1 of the first well construction 210.In addition, in one optionally embodiment, the wide W2 of well of isolated well construction 220 can be less than or equal in fact the wide W1 of well of the first well construction 210, but is not limited thereto, the demand of this partial visual user and determining.Similarly, preferably sense quality in order to photo-sensitive cell 200 can be made to have, isolated well construction 220 is suitable for being electrically connected to an earthing potential, and then the photoelectron collected by it can be avoided to have influence on the electrical performance of photo-sensitive cell 200.
In addition, in order to isolated well construction can be made to have preferably isolated effect, the ion doping concentration of isolated well construction 220 or dopant species can be different from fact ion doping concentration or the dopant species of the first well construction 210.Specifically, the ion doping concentration of isolated well construction 220 can be greater than, be equal to or less than the ion doping concentration of the first well construction 210, or the ion doping kind of isolated well construction 220 may be the same or different the ion doping kind in the first well construction 210, this part can be determined according to the demand of user.In the present embodiment, the ion doping concentration of isolated well construction 220 is to be greater than the ion doping concentration of the first well construction 210 for illustrating.
In the present embodiment, in order to the electronics electricity hole produced below obstruct first well construction 210 effectively can be reached, the first adjacent well construction 210 is passed to 240a, the mode that isolated well construction 220 can adopt ring to establish is arranged at the periphery of the first well construction 210 described in each, to separate described first well construction 210, as shown in Fig. 8 and Fig. 9.It is worth mentioning that, the mode that isolated well construction 220 is formed at first substrate 240 can be that the mode adopting ion cloth to plant will be doped in first substrate 240, with formed as Fig. 8 and Fig. 9 the isolated well construction 220 that illustrates, the ionic type adulterated wherein completely cutting off well construction 220 can be N-type or P type.
In addition, the second well construction 230 is positioned at a second substrate 250 and is suitable for being subject to incident light L1 and irradiates and produce one second photoelectric current I
2, wherein the second well construction 230 surface area A2 summation be exposed on second substrate 250 equals in fact the first well construction 210 and is exposed to surface area A1 summation on first substrate 240, as shown in Fig. 8, Fig. 9 and Figure 10.In the present embodiment, the second well construction 230 can adopt identical structure and generation type with aforesaid first well construction 210, and with aforementioned comparatively unlike: the second well construction 230 need not separate by aforesaid isolated well construction 220, as shown in Figure 10.In Fig. 10, each second well construction 230 is except collecting the electric hole of the electronics produced below itself to except 240a, also may collect electronics electricity hole that the second contiguous well construction 230 produces to 240a, its reason is: belong to the corresponding electronics electricity hole produced of infrared band in incident light L1 and can have 240a far away from absorption distance (as: the evolving path P2, P3).
Similarly, multiple second well constructions 230 second substrate 250 being subject to incident light L1 irradiation are carried out being electrically connected (as: parallel connection) just exportable aforesaid first photoelectric current I
2.
Similar in appearance to principle and the mechanism of aforementioned photo-sensitive cell 100,100a, 100b, the photo-sensitive cell 200 of the present embodiment also can according to aforesaid first photoelectric current I
1with the second photoelectric current I
2and obtain the first spectrum signal S1 and the second spectrum signal S2 of incident light L1 respectively, and simultaneously by carrying out calculation process to the first spectrum signal S1 and the second spectrum signal S2 and the spectrum signal of incident light L1 can be obtained, this part with reference to the relevant discussion of figure 5A ~ Fig. 5 C, just can repeat no more at this.In other words, in order to can to the first photoelectric current I
1with the second photoelectric current I
2carry out calculation process, the present embodiment also can have a signal processing circuit 260, and wherein signal processing circuit 260 is identical with aforesaid signal processing circuit 160, and this part also can with reference to aforementioned, in this just no longer superfluous words.
Based on above-mentioned known, the photo-sensitive cell 200 of the present embodiment can utilize isolated well construction 220 to be separated between two by multiple first well construction 210, thus, just the electronics electricity hole produced below the first well construction 210 can be avoided or reduce and the first adjacent well construction 210 can be passed to 240a, and the first adjacent well construction 210 is impacted, the first well construction 210 that wherein isolated well construction 220 is separated is suitable for by incident light L1 irradiates and produces the first photoelectric current I
1.Simultaneously, the second well construction 230 can be made to produce the second photoelectric current I by incident light L1 irradiates
2wherein the second well construction 230 surface area A2 summation be exposed on second substrate 250 approximates in fact greatly the first well construction 210 and is exposed to surface area A1 summation on first substrate 240, and the second well construction 230 is adjacent between two, thus, by processing the first photoelectric current I
1with the second photoelectric current I
2signal can know the spectrum signal (the 3rd spectrum signal S3 as the aforementioned) of incident light.
Based on above-mentioned, the present embodiment also can provide a kind of method measuring incident light, and it is applicable to above-mentioned photo-sensitive cell 200.First, aforesaid first well construction 210 can be made to produce the first photoelectric current I by incident light L1 irradiates
1, and the first well construction 210 separate by aforesaid isolated well construction 220, wherein isolated well construction 220 is the peripheries being doped in each first well construction 210.Afterwards, aforesaid second well construction 210 is made to produce the second photoelectric current I by incident light L1 irradiates
2, wherein the second well construction 210 is amassed summation by the surface A 2 that incident light L1 irradiates and equals in fact the surface area A1 summation that the first well construction 210 irradiated by incident light L1.Then, according to the first photoelectric current I
1with the second photoelectric current I
2to obtain the spectrum signal of incident light L1.
Above-mentioned method for measurement more comprises can make isolated well construction 220 be electrically connected to an earthing potential, can arrive to avoid the photoelectron collected by isolated well construction 220 electrical performance affecting photo-sensitive cell 200.
In sum, the photo-sensitive cell of one embodiment of the invention and the method for measurement incident light at least have features.First, first can utilize the first well construction of light shield layer cover part and expose the first well construction of remainder, the first well construction exposed to make to be blocked layer produces the first photoelectric current by incident light irradiates, wherein due to contiguous first well construction of the first well construction, and be coated with light shield layer above the first well construction, therefore incident light just can not expose to the below place of the first well construction being blocked layer and covering, thus just can not produce electronics electricity hole on and contiguous the first well construction not being blocked layer and covering of impact.Simultaneously, the second well construction is made also to produce the second photoelectric current by incident light irradiates, wherein the second well construction equals in fact light shield layer institute by the surface area summation that incident light irradiates and exposes the surface area summation of the first well construction by incident light irradiation, and the second well construction is adjacent between two.Thus, photo-sensitive cell just can know the spectrum signal of incident light by the signal processing the first photoelectric current and the second photoelectric current.
In addition, photo-sensitive cell also can utilize isolated well construction to be separated between two by multiple first well construction, thus, just can avoid or reduce the electric hole of the electronics produced below the first well construction to being passed to the first adjacent well construction, and the first adjacent well construction is impacted, the first well construction that wherein isolated well construction is separated is suitable for by incident light irradiates and produces the first photoelectric current.Similarly, the second well construction is made also to produce the second photoelectric current by incident light irradiates, wherein the second well construction surface area summation be exposed on second substrate equals in fact the first well construction exposure surface area summation on the first substrate, and the second well construction is adjacent between two.Thus, photo-sensitive cell is just by processing the signal of the first photoelectric current and the second photoelectric current and knowing the spectrum signal of incident light.
The above, be only preferred embodiment of the present invention, and when not limiting scope of the invention process with this, the simple equivalence namely generally done according to claims of the present invention and invention description content changes and modifies, and all still remains within the scope of the patent.Any embodiment of the present invention or claim must not reach whole object disclosed by the present invention or advantage or feature in addition.In addition, summary part and title are only used to the use of auxiliary patent document search, are not used for limiting interest field of the present invention.
Claims (22)
1. a photo-sensitive cell, is characterized in that, comprising:
Multiple first well construction;
One light shield layer, first well construction described in this light shield layer cover part also exposes this first well construction at least one, and the described first well construction vicinity covered by this light shield layer the periphery of this first well construction that exposes by this light shield layer, wherein this first well construction of exposing by this light shield layer be suitable for by part one incident light irradiates and produce one first photoelectric current; And
At least one second well construction, be positioned at a second substrate and be suitable for being subject to this incident light of part and irradiate and produce one second photoelectric current, wherein this second well construction accepts surface area summation that this incident light irradiates and equals in fact this light shield layer institute and expose the surface area summation that this first well construction accepts the irradiation of this incident light;
Wherein, this light shield layer is made by the material avoiding light to pass through.
2. photo-sensitive cell as claimed in claim 1, wherein, this photo-sensitive cell is suitable for the one first spectrum signal and the one second spectrum signal that obtain this incident light according to this first photoelectric current and this second photoelectric current respectively.
3. photo-sensitive cell as claimed in claim 2, wherein, this photo-sensitive cell is suitable for this first spectrum signal and this second spectrum signal being carried out a calculation process to obtain one the 3rd spectrum signal of this incident light.
4. photo-sensitive cell as claimed in claim 3, wherein, the 3rd spectrum signal comprises an infrared light spectrum signal.
5. photo-sensitive cell as claimed in claim 1, wherein, also comprises a signal processing circuit, receives this first photoelectric current and this second photoelectric current, and carry out a calculation process to this first photoelectric current and this second photoelectric current, to know a spectrum signal of this incident light.
6. photo-sensitive cell as claimed in claim 5, wherein, this signal processing circuit comprises:
One multiplexer, at least there is a first input end, one second input and an output, wherein described first well construction that exposes by this light shield layer be suitable for being electrically connected this first input end of this multiplexer to receive this first photoelectric current, described second well construction is electrically connected this second input of this multiplexer to receive this second photoelectric current;
One signal converter, has an input and an output, and wherein this output of this multiplexer is electrically connected this input of this signal converter;
One processing unit, has an input, and wherein this output of this signal converter is electrically connected this input of this processing unit.
7. photo-sensitive cell as claimed in claim 1, wherein, described first well construction and this at least one second well construction are positioned at same substrate or different substrate.
8. photo-sensitive cell as claimed in claim 1, wherein, described first well construction and this at least one second well construction are identical polar well construction or opposed polarity well construction.
9. photo-sensitive cell as claimed in claim 1, wherein, is suitable for being electrically connected to an earthing potential by described first well construction that this light shield layer covers.
10. photo-sensitive cell as claimed in claim 1, wherein, the shape of the opening of described first well construction that this light shield layer exposes comprises a square aperture or a polygonal-shaped openings.
11. photo-sensitive cells as claimed in claim 1, wherein, described first well construction covered by this light shield layer with described first well construction that exposes by this light shield layer be staggered.
12. photo-sensitive cells as claimed in claim 1, wherein, by described first well construction that this light shield layer covers be located on the periphery of each described first well construction that exposes by this light shield layer.
13. 1 kinds of photo-sensitive cells, is characterized in that, comprising:
Multiple first well construction;
One isolated well construction, is positioned at the periphery of each described first well construction, and to separate described first well construction, wherein said first well construction is suitable for by part one incident light irradiates and produces one first photoelectric current; And
Multiple second well construction, be suitable for being subject to this incident light of part and irradiate and produce one second photoelectric current, the surface area summation that wherein said second well construction accepts the irradiation of this incident light equals in fact the surface area summation that described first well construction accepts the irradiation of this incident light;
Wherein, this isolated well construction is suitable for being electrically connected to an earthing potential.
14. photo-sensitive cells as claimed in claim 13, wherein, the well depth of this isolated well construction is greater than in fact the well depth of described first well construction.
15. photo-sensitive cells as claimed in claim 13, wherein, the well of this isolated well construction is wide, and to be less than or equal in fact the well of described first well construction wide.
16. photo-sensitive cells as claimed in claim 13, wherein, the ion doping concentration of this isolated well construction or dopant species are different in essence in the ion doping concentration of described first well construction or dopant species.
17. photo-sensitive cells as claimed in claim 13, wherein, this isolated well construction is located on the periphery of the first well construction described in each, to separate described first well construction.
18. 1 kinds of methods measuring incident light, is characterized in that, comprising:
Multiple first well construction is made to produce one first photoelectric current by this incident light irradiates;
At least one second well construction is made to produce one second photoelectric current by this incident light irradiates; And
According to this first photoelectric current and this second photoelectric current to obtain the spectrum signal of this incident light;
Wherein, one light shield layer, first well construction described in this light shield layer cover part also exposes this first well construction at least one, and the described first well construction vicinity covered by this light shield layer the periphery of this first well construction that exposes by this light shield layer, wherein this first well construction of exposing by this light shield layer be suitable for by part one incident light irradiates and produce one first photoelectric current, this light shield layer is made by the material avoiding light to pass through; Or
One isolated well construction, be suitable for being electrically connected to an earthing potential, this isolated well construction is positioned at the periphery of each described first well construction, and to separate described first well construction, wherein said first well construction is suitable for by this incident light of part irradiates and produces this first photoelectric current.
19. methods measuring incident light as claimed in claim 18, wherein, comprise with the method for the spectrum signal knowing this incident light according to this first photoelectric current and this second photoelectric current:
Use a signal processing circuit to receive this first photoelectric current and this second photoelectric current; And
Utilize this first photoelectric current of this signal processing circuit process and this second photoelectric current, to obtain one first spectrum signal and the one second spectrum signal of this incident light respectively.
20. methods measuring incident light as claimed in claim 19, wherein, also comprise:
This first spectrum signal and this second spectrum signal are carried out a calculation process, to obtain an infrared light spectrum signal of this incident light.
21. methods measuring incident light as claimed in claim 20, wherein, also comprise:
This second spectrum signal is deducted this first spectrum signal, to obtain this infrared light spectrum signal.
22. methods measuring incident light as claimed in claim 20, wherein, also comprise:
This first spectrum signal and this second spectrum signal are divided by, to obtain this infrared light spectrum signal.
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| CN107240614B (en) * | 2017-06-16 | 2019-03-22 | 苏州苏纳光电有限公司 | Infrared focus plane multicolour detector and preparation method thereof |
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| EP1432044A1 (en) * | 2002-12-20 | 2004-06-23 | EM Microelectronic-Marin SA | Photodiode with an integrated polysilicon filter |
| EP1703562A1 (en) * | 2005-03-17 | 2006-09-20 | ELMOS Semiconductor AG | Optical receiver having a spectral sensitivity close to the human eye |
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| EP1432044A1 (en) * | 2002-12-20 | 2004-06-23 | EM Microelectronic-Marin SA | Photodiode with an integrated polysilicon filter |
| CN1938856A (en) * | 2004-05-27 | 2007-03-28 | 佛文恩股份有限公司 | Vertical color filter sensor group and semiconductor integrated circuit fabrication method for fabricating same |
| EP1703562A1 (en) * | 2005-03-17 | 2006-09-20 | ELMOS Semiconductor AG | Optical receiver having a spectral sensitivity close to the human eye |
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