CN103094274B - Semiconductor light-emitting apparatus - Google Patents
Semiconductor light-emitting apparatus Download PDFInfo
- Publication number
- CN103094274B CN103094274B CN201110350684.4A CN201110350684A CN103094274B CN 103094274 B CN103094274 B CN 103094274B CN 201110350684 A CN201110350684 A CN 201110350684A CN 103094274 B CN103094274 B CN 103094274B
- Authority
- CN
- China
- Prior art keywords
- area
- electrode
- emitting apparatus
- conductive type
- multilayer body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Devices (AREA)
Abstract
The invention provides a kind of semiconductor light-emitting apparatus, this semiconductor light-emitting apparatus has semiconductor multilayer body, and semiconductor multilayer body comprises the first conductive type semiconductor layer providing the first major surfaces and the second conductive type semiconductor layer and the active layer that provide the second major surfaces.Semiconductor multilayer body is divided into first area and second area.At least one contact hole is formed as passing active layer from the second major surfaces of first area.First electrode is formed on the second major surfaces with the second conductive type semiconductor layer of the first conductive type semiconductor layer and second area that are connected to first area.With the first conductive type semiconductor layer of the second conductive type semiconductor layer and second area that are connected to first area on the second major surfaces that second electrode is formed in first area.
Description
Technical field
The present invention relates to a kind of light-emitting device, more particularly, relate to a kind of semiconductor light-emitting apparatus being integrated with the protection diode of the electric discharge suppressing such as electrostatic and so on.
Background technology
Export with regard to the height as light source, with regard to excellent luminous efficiency and reliability, semiconductor light-emitting apparatus is useful, thus, actively developed and the backlight that can replace in lighting device or display unit has been exported and the research of the semiconductor light-emitting apparatus of high efficiency light source as high.
Generally speaking, semiconductor light-emitting apparatus includes active layer and p-type semiconductor and n-type semiconductor, and active layer is between p-type semiconductor and n-type semiconductor and can by the recombination luminescence in electronics and hole.Can position residing for electrode or this semiconductor light-emitting apparatus is classified according to current path, the semiconductor light-emitting apparatus of even now is not by concrete restriction, but whether the classification of this semiconductor light-emitting apparatus can conduct electricity according to the substrate being mainly used in semiconductor light-emitting apparatus and determine.
Such as, when using the substrate of electric insulation, mesa etch can be needed formed the n-type electrode being connected to n-type semiconductor layer.That is, partly remove the part of p-type semiconductor layer and active layer with the part in exposing n-type semiconductor layer regions, and p-side electrode is formed on the top surface of p-type semiconductor layer, n-side electrode is formed on the top surface of the exposure of n-type semiconductor layer.
In above-mentioned electrode structure, in the process performing Mesa etching process, light-emitting zone can reduce, and light-emitting zone can be formed in the direction vertical with electric current, is difficult to improve the uniform CURRENT DISTRIBUTION running through whole region thus, and this can cause luminous efficiency to decline.
Meanwhile, when using conductive substrates, conductive substrates can be used as lateral electrode.In this semiconductor light-emitting apparatus structure, compared with structure above, the light loss in light-emitting zone is few, and can ensure uniform electric current wherein significantly, thus can improve luminous efficiency.
But, when light-emitting device is embodied as there is large area obtain high output, the electrode structure to refer to by providing such as electrode to light-emitting device and so on realizes uniform CURRENT DISTRIBUTION at whole light-emitting zone, but when using conductive substrates, owing to being arranged on electrode on light-emitting area or causing the restriction of extracting light because of the light absorption of electrode, make luminous efficiency deterioration thus.
In addition, when operating means, semiconductor light-emitting apparatus can be exposed to the transient high voltage of such as static discharge (ESD), so can damage the function of device.
Need the design avoiding damaging thus.Mainly, consider the scheme of adding special protection diode, but in this case, independent diode is wanted packed and will be arranged in single package space, has caused the difficulty of product miniaturization thus.
Summary of the invention
An aspect of of the present present invention provides a kind of semiconductor light-emitting apparatus with the structure being wherein integrated with esd protection diode.
According to an aspect of the present invention, provide a kind of semiconductor light-emitting apparatus, this semiconductor light-emitting apparatus comprises: semiconductor multilayer body, described semiconductor multilayer body comprises the first major surfaces respect to one another and the second major surfaces, the active layer first conductive type semiconductor layer of described first major surfaces being provided and the second conductive type semiconductor layer of described second major surfaces being provided and being formed between described first conductive type semiconductor layer and described second conductive type semiconductor layer, described semiconductor multilayer body is divided into first area and second area by separation trough, at least one contact hole, is formed as passing active layer from the second major surfaces of first area, thus is connected to a region of the first conductive type semiconductor layer, first electrode, is formed on the second major surfaces of semiconductor multilayer body, is connected to the first conductive type semiconductor layer of first area, and is connected to the second conductive type semiconductor layer of second area by least one contact hole described, second electrode, the second major surfaces being formed in first area is connected to the second conductive type semiconductor layer of first area, Electrode connection unit, by first conductive type semiconductor layer of described second Electrode connection to second area.
Semiconductor light-emitting apparatus also can comprise the support base with conductivity, and described support base is set to the second major surfaces of semiconductor multilayer body, to be connected to the first electrode.In this case, described support base is formed by plating technic.In addition, semiconductor light-emitting apparatus also can comprise the bonding welding pad be formed on the first conductive type semiconductor layer of described second area.
Semiconductor light-emitting apparatus also can comprise support base, and the second major surfaces that described support base is arranged on described semiconductor multilayer body has and is connected respectively to described first electrode and the second electrode to reach the first outside contact conductor unit and the second contact conductor unit.
Described second electrode can have the region being exposed to separation trough, and described Electrode connection unit can form the region of the exposure to be connected to described second electrode along the side surface of the second area of described semiconductor multilayer body.
In this case, semiconductor light-emitting apparatus also can comprise the passivation layer on the side surface of the second area being formed in described semiconductor multilayer body, thus by the second area electric isolution of Electrode connection unit and described semiconductor multilayer body.
Described semiconductor light-emitting apparatus also can comprise be formed in described semiconductor multilayer body the second major surfaces on and the dielectric isolation layer be formed as described first electrode and described second electrode separation.
In this case, dielectric isolation layer can extend between the part being filled in contact hole of the madial wall of contact hole and the first electrode.
Second electrode can comprise high reverse--bias ohmic contact layer.In this case, described high reverse--bias ohmic contact layer can comprise the material selected from the group be made up of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and their mixture.
The area being set to the first area of light-emitting zone of semiconductor multilayer body can be larger than the area being set to the second area of protection diode area of semiconductor multilayer body.In this case, the second area of semiconductor multilayer body can have the area of 20% of the gross area being less than or equal to semiconductor multilayer body.At least one contact hole described can be set to multiple.
According to a further aspect in the invention, provide a kind of semiconductor light-emitting apparatus, this semiconductor light-emitting apparatus comprises: semiconductor multilayer body, described semiconductor multilayer body comprises the first major surfaces respect to one another and the second major surfaces, the active layer first conductive type semiconductor layer of described first major surfaces being provided and the second conductive type semiconductor layer of described second major surfaces being provided and being formed between described first conductive type semiconductor layer and described second conductive type semiconductor layer, described semiconductor multilayer body is divided into first area and second area by separation trough, at least one first contact hole, is formed as passing active layer from the second major surfaces of first area, thus is connected to a region of the first conductive type semiconductor layer, at least one second contact hole, is formed as passing active layer from the second major surfaces of second area, thus is connected to a region of the first conductive type semiconductor layer, first electrode, is formed on the second major surfaces of semiconductor multilayer body, is connected to the first conductive type semiconductor layer of first area, and is connected to the second conductive type semiconductor layer of second area by least one first contact hole described, second electrode, is formed on the second major surfaces of semiconductor multilayer body, is connected to the first conductive type semiconductor layer of second area, and is connected to the second conductive type semiconductor layer of first area by least one second contact hole described.
Semiconductor light-emitting apparatus also can comprise the support base with conductivity, and described support base is set to the second major surfaces of semiconductor multilayer body, to be connected to the second electrode.In this case, described support base is formed by plating technic.In addition, semiconductor light-emitting apparatus also can comprise the bonding welding pad be formed on the first conductive type semiconductor layer of described second area and the Electrode connection unit the first electrode being electrically connected to bonding welding pad.
Described first electrode can have the region being exposed to separation trough, and described Electrode connection unit can form the region of the exposure to be connected to described first electrode along the side surface of the second area of described semiconductor multilayer body.
In this case, semiconductor light-emitting apparatus also can comprise the passivation layer of the side surface electric isolution of the second area of Electrode connection unit and described semiconductor multilayer body.
Described semiconductor light-emitting apparatus also can comprise be formed in semiconductor multilayer body the second major surfaces on and the dielectric isolation layer be formed as the first electrode and the second electrode separation.In this case, dielectric isolation layer can extend between the part being filled in the first contact hole and the second contact hole of the madial wall of the first contact hole and the second contact hole and the first electrode.
Accompanying drawing explanation
By the detailed description of carrying out below in conjunction with accompanying drawing, above and other aspect of the present invention, other advantages of characteristic sum will become and be easier to understand, in accompanying drawing:
Fig. 1 is the plane graph of semiconductor light-emitting apparatus according to a first embodiment of the present invention;
Fig. 2 is the side sectional view of the semiconductor light-emitting apparatus of line I-I ' intercepting along Fig. 1;
Fig. 3 is the side sectional view of the semiconductor light-emitting apparatus of line II-II ' intercepting along Fig. 1;
Fig. 4 is the side sectional view of the line III-III ' intercepting along Fig. 1;
Fig. 5 is the equivalent circuit diagram for the semiconductor light-emitting apparatus shown in key-drawing 1;
Fig. 6 is the plane graph of semiconductor light-emitting apparatus according to a second embodiment of the present invention;
Fig. 7 is the side sectional view of the semiconductor light-emitting apparatus of line I-I ' intercepting along Fig. 6;
Fig. 8 is the side sectional view of the semiconductor light-emitting apparatus of line II-II ' intercepting along Fig. 6;
Fig. 9 is the side sectional view of the semiconductor light-emitting apparatus of line III-III ' intercepting along Fig. 6;
Figure 10 is the side sectional view of semiconductor light-emitting apparatus according to another embodiment of the present invention.
Embodiment
Describe embodiments of the invention in detail now with reference to accompanying drawing, they easily can be put into practice by those skilled in the art in the invention.But, in the process describing the embodiment of the present invention, will the detailed description to known function or structure be omitted, thus not with the fuzzy description of this invention of non-essential details.
In addition, identical in accompanying drawing label represents identical element all the time.
Unless clearly provided contrary description, otherwise word " comprises " will be understood to that meaning comprises described element, and not get rid of other elements.
Hereinafter, with reference to the accompanying drawings embodiments of the invention are described.
Fig. 1 is the plane graph of semiconductor light-emitting apparatus according to a first embodiment of the present invention.Fig. 2 is the side sectional view of the semiconductor light-emitting apparatus along the line I-I ' intercepting shown in Fig. 1.
See figures.1.and.2, semiconductor light-emitting apparatus 10 according to a first embodiment of the present invention can comprise semiconductor multilayer body 15, the active layer 15b that semiconductor multilayer body 15 comprises the first conductive type semiconductor layer 15a, second conductive type semiconductor layer 15c and is arranged between the first conductive type semiconductor layer 15a and second conductive type semiconductor layer 15c.Semiconductor multilayer body 15 can have first major surfaces and the second major surfaces of locating toward each other, and the first major surfaces is provided by the first conductive type semiconductor layer 15a, and the second major surfaces is provided by second conductive type semiconductor layer 15c.
Semiconductor multilayer body 15 can be the III-VI compound semiconductor of such as nitride-based semiconductor, but is not limited to this.In the present example, semiconductor multilayer body 15 is provided after can grown independent growth substrate in the order according to formation first conductive type semiconductor layer 15a, active layer 15b and second conductive type semiconductor layer 15c, and semiconductor multilayer body 15 can be provided with the wire structures be formed on the first major surfaces of semiconductor multilayer body 15, and support base 11 can be adopted at this.
Here, the support base 11 adopted in the present example can be the substrate with conductivity, and easily can be provided by plating technic.Subsequently, growth substrate can be removed from semiconductor multilayer body 15, obtain the apparatus structure shown in Fig. 1 thus.Under normal conditions, the first conductive type semiconductor layer 15a and second conductive type semiconductor layer 15c can be n-type semiconductor layer and p-type semiconductor layer separately.
Semiconductor multilayer body 15 can be divided into first area A and second area B by separation trough g.First area A can be set to the light emitting diode driven together with light-emitting diode, and second area B can be esd protection diode.In the present example, second area B can be used as the bond area for wire bonding, to be connected to external circuit.
Two region A with B are connected by lead-in wire described below and all can be used as light emitting diode and esd protection diode operates.
According to embodiments of the invention, the second electrode 14 can be formed on the second major surfaces of semiconductor multilayer body 15, to be connected to the second conductive type semiconductor layer 15c of first area A.
Second electrode 14 can be high reverse--bias ohmic contact layer, thus the light reflection that active layer 15b is produced.Such as, high reverse--bias ohmic contact layer can be formed by the material selected from the group be made up of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and their mixture.
Second major surfaces of semiconductor multilayer body 15 can have the first electrode 12 be formed thereon, thus the first electrode 12 is connected to the first conductive type semiconductor layer 15a of first area A.As described in the present example, contact hole H can be used realize the connection between the first electrode 12 and the first conductive type semiconductor layer 15a of first area A.
As shown in Figure 2, in the first area A of semiconductor multilayer body 15, at least one contact hole H can be formed as extending from the second major surfaces of semiconductor multilayer body 15, simultaneously through second conductive type semiconductor layer 15c and active layer 15b, until the part in the region of the first conductive type semiconductor layer 15a is exposed.First conductive type semiconductor layer 15a can be exposed by contact hole H.
First electrode 12, namely from the electrode unit 12 ' that the first electrode 12 extends, can be connected with the exposed region of the first conductive type semiconductor layer 15a provided by contact hole H.Thus the first electrode 12 be positioned on the second major surfaces of semiconductor multilayer body 15 can be implemented as and is electrically connected to the first conductive type semiconductor layer 15a.
Contact hole H is formed before can forming wire structures after semiconductor multilayer body 15 is formed in growth substrate but thereon.According to embodiments of the invention, contact hole H is shown as has through-hole form, but contact hole H can be formed to have the various shapes of the part in the region that can expose the first conductive type semiconductor layer 15a.
As shown in Figure 1, in the present example, multiple contact hole H can be formed as being positioned on the A of first area, thus obtains uniform CURRENT DISTRIBUTION and semiconductor light-emitting apparatus for the large regions exported for high level is useful.
Dielectric isolation layer 13 can be formed as easily by the first electrode 12 of being arranged on the second major surfaces of semiconductor multilayer body 15 and the second electrode 14 electrically separated.Such dielectric isolation layer 13 can be formed as extending between the madial wall and the electrode unit 12 ' of the first electrode 12 of contact hole H.
First electrode 12 not only can be electrically connected to the first conductive type semiconductor layer 15a of first area A, and can be electrically connected to the second conductive type semiconductor layer 15c of second area B.Meanwhile, the second electrode 14 being connected to the second conductive type semiconductor layer 15c of first area A can be electrically connected to the first conductive type semiconductor layer 15a of second area B.
As shown in Figure 2, the second electrode 14 can have the exposed region T extending and be exposed to the outside of semiconductor multilayer body 15.As in the present example, exposed region T can be arranged in separation trough g, thus easily realizes exposed region T and the connection being positioned at the electrode pad 18 on second area B.
Second electrode 14 and electrode pad 18 are connected to each other by electrode connecting part 17.Electrode connecting part 17 can be formed along the side surface of the semiconductor multilayer body 15 of second area B, and can by the side surface electric isolution of passivation layer 16 with semiconductor multilayer body 15.
Such Electrode connection can be understood by the equivalent electric circuit shown in Fig. 5.First area A can be used as light emitting diode operation, and second area B can be used as esd protection diode operation.
When esd protection diode; because the reverse voltage applied when light emitting diode normal running makes esd protection diode not operate; when generation transient high voltage and when exceeding the electric current of puncture voltage; in the process; overcurrent is directed into esd protection diode, thus light emitting diode can be protected.
Support base 11 can be arranged on the second major surfaces of semiconductor multilayer body 15, to obtain the wire structures formed by the first electrode 12, second electrode 14 and the dielectric isolation layer 13 between the first electrode 12 and the second electrode 14.
Support base 11 according to present example employing can be the substrate with conductivity.Support base 11 can be connected to the first electrode 12 by dielectric isolation layer 13 as shown in Figure 2 and the second electrode 14 electric insulation, is set to the electrode structure for the first conductive type semiconductor layer 15a and the first electrode 12 thus.That is, the support base 11 with conductivity can be arranged on the external circuit in the mounting surface being arranged in semiconductor light-emitting apparatus 10, thus is connected to external circuit.
As mentioned above, the electrode pad 18 being connected to the second electrode 14 can be formed on the first conductive type semiconductor layer 15a of second area B.The bond area of light-emitting device 10 can be set to the upper surface of second area B, that is, the first relative with the second major surfaces major surfaces.
So, because the second electrode 14 on the bottom of separation trough g can be introduced to by electrode connecting part 17 electrode pad 18 be positioned on the second area B of semiconductor multilayer body 15, so wire bonding unit 19 can be formed on the horizontal plane that remains basically stable with the upper surface of light-emitting device 10.
With present example unlike, on the bottom that bond area is positioned at separation trough g, can occur to contact with the side surface of light-emitting zone is less desirable during bonding technology, or the second electrode and/or insulating barrier, passivation layer can be bonded thermal shock in technical process or mechanical impact damage and cause defect in connection simultaneously.According to present example, the generation of defect can be prevented by bonding syndeton.
Because the first area A of semiconductor multilayer body 15 can be set to light-emitting zone, so first area A can be set to have the area than being set to protect the area of the second area B of diode and bond area large.The second area B of semiconductor multilayer body 15 can have the area of 20% of the gross area being less than or equal to semiconductor multilayer body 15.
Light-emitting device 10 also can comprise the passivation layer 16 formed by insulating material on the side surface being at least formed in semiconductor multilayer body 15 as shown in Figure 2.
Fig. 3 shows the side sectional view of the semiconductor light-emitting apparatus 10 of the line II-II ' intercepting along Fig. 1, and Fig. 4 shows the side sectional view of the line III-III ' intercepting along Fig. 1.
With reference to Fig. 3, light-emitting device 10 is shown as in stacked state, and wherein, the first electrode 12, dielectric isolation layer 13, second electrode 14, semiconductor multilayer body 15 is formed in order has in the support base 11 of conductivity.
Meanwhile, with reference to Fig. 4, similar with Fig. 3, light-emitting device 10 can be stacked state, and wherein, the first electrode 12, dielectric isolation layer 13, second electrode 14, semiconductor multilayer body 15 are formed in the support base 11 except forming porose region in order.
But, according in the light-emitting device 10 of the embodiment of the present invention, current distribution characteristic can be improved by being formed with multiple contact hole H of fixed intervals layout, and the structure that wherein the first electrode 12 directly can contact with the first conductive type semiconductor layer 15a can be provided.
According in the light-emitting device of present example, the first electrode 12 and the second electrode 14 that are directly connected to the first conductive type semiconductor layer 15a and second conductive type semiconductor layer 15c separately can be arranged on a surface, namely, on the second major surfaces, but in final external circuit connects, the first contact structures being connected to the first conductive type semiconductor layer 15a of LED area A can be formed in the second major surfaces direction through support base 11.In addition, the second contact structures being connected to the second conductive type semiconductor layer 15c of LED area A can be formed in the first major surfaces direction relative with the second major surfaces.
In the second embodiment of the present invention, contrary with said circumstances, when final external circuit connects, the first contact structures being connected to first conductive type semiconductor layer of LED area A can be formed in the first major surfaces direction, and the second contact structures being connected to the second conductive type semiconductor layer of LED area A can be formed through the support base be positioned on the second major surfaces.
Fig. 6 is the plane graph of semiconductor light-emitting apparatus according to a second embodiment of the present invention.Fig. 7 is the side sectional view of the semiconductor light-emitting apparatus of line I-I ' intercepting along Fig. 6.
With reference to Fig. 6 and Fig. 7, semiconductor light-emitting apparatus 60 according to the second embodiment can comprise semiconductor multilayer body 65, the active layer 65b that semiconductor multilayer body 65 has the first conductive type semiconductor layer 65a, second conductive type semiconductor layer 65c and is formed between the first conductive type semiconductor layer 65a and second conductive type semiconductor layer 65c.Semiconductor multilayer body 65 can comprise the first major surfaces respect to one another and the second major surfaces, and the first major surfaces is provided by the first conductive type semiconductor layer 65a, and the second major surfaces is provided by second conductive type semiconductor layer 65c.
The support base 61 adopted in present example can be the substrate with conductivity, and can easily be provided by plating technic.Under normal conditions, the first conductive type semiconductor layer 65a and second conductive type semiconductor layer 65c can be respectively n-type semiconductor layer and p-type semiconductor layer.
Similar to above-mentioned first embodiment, semiconductor multilayer body 65 can be divided into first area A and second area B by separation trough g.First area A can be set to the light emitting diode driven together with light-emitting diode, and second area B can be esd protection diode.In the present example, second area B can be used as the bond area for wire bonding, to be connected to external circuit.
The semiconductor multilayer body 65 being divided into two region A and B connects to realize the connection between light emitting diode and esd protection diode by connecting different wirings from the wiring in the previous embodiment shown in the equivalent electric circuit of Fig. 5.
As shown in Figure 7, semiconductor light-emitting apparatus 60 can comprise and is respectively formed at the first contact hole H1 in first area A and second area B and the second contact hole H2.First contact hole H1 and the second contact hole H2 all can be formed as from the second major surfaces through active layer, thus they are connected to a region of the first conductive type semiconductor layer 65a.First contact hole H1 and the second contact hole H2 can be formed as multiple respectively.Such as, as in the present embodiment, the first contact hole H1 be formed in the A of first area can be formed as multiple, such as, 12 contact holes, to obtain uniform CURRENT DISTRIBUTION in relatively wide light-emitting zone, consider that region is relatively little, the second contact hole H2 only can be formed as a contact hole.
The second major surfaces that first electrode 62 can be formed in semiconductor multilayer body 65 is connected with the first conductive type semiconductor layer 65a of first area A and the second conductive type semiconductor layer 65c of second area B.As shown in Figure 7, the connection between the first electrode 62 and the first conductive type semiconductor layer 65a of first area A can be realized by contact hole H1.That is, the electrode unit 62 ' extended from the first electrode 62 can be attached to the exposed region of the first conductive type semiconductor layer 65a provided by contact hole H1, thus realizes the connection between the first electrode 62 and the first conductive type semiconductor layer 65a of first area A.
The second major surfaces that second electrode 64 can be formed in the second duplexer 65 is connected with the second conductive type semiconductor layer 65c of first area A and the first conductive type semiconductor layer 65a of second area B.As shown in Figure 7, contact hole H2 can be used realize the connection between the second electrode 64 and the first conductive type semiconductor layer 65a of second area B.That is, the electrode unit 64 ' extended from the second electrode 64 can be attached to the exposed region of the first conductive type semiconductor layer 65a provided by contact hole H2, thus realizes the connection between the second electrode 64 and the first conductive type semiconductor layer 65a of second area B.
Dielectric isolation layer 63 can be formed as easily by the first electrode 62 of being all arranged on same second major surfaces of semiconductor multilayer body 65 and the second electrode 64 electrically separated.Such dielectric isolation layer 63 can be formed to extend between the madial wall and the electrode unit 62 ' of the first electrode 62 of the first contact hole H1 and the second contact hole H2.
In addition, as shown in Figure 7, the first electrode 62 can have the exposed region T extending and be exposed to the outside of semiconductor multilayer body 65.In the case of the present embodiment, exposed region T can be positioned at separation trough g.
In the present example, similar with the form shown in Fig. 2, electrode pad 68 can be formed on second area B, but with the form shown in Fig. 2 unlike, prevent electrode pad 68 to be connected to the first conductive type semiconductor layer 65a of second area B by passivation layer 66.
By Electrode connection unit 67, the exposed region of the first electrode 62 and electrode pad 68 are connected to each other.Electrode connection unit 67 can along the side surface formation of the semiconductor multilayer body 65 of second area B and by passivation layer 66 electric isolution.
So, similar with the equivalent electric circuit of Fig. 5, realize the connection between LED area A and protection diode area by above-mentioned Electrode connection.
Support base 61 can be arranged on the second major surfaces of semiconductor multilayer body 65, to obtain the wire structures formed by the first electrode 62, second electrode 64 and the dielectric isolation layer 63 between the first electrode 62 and the second electrode 64.
Support base 61 according to present example employing can be the substrate with conductivity.Support base 61 can be connected to the second electrode 64 by dielectric isolation layer 63 and the first electrode 62 electric insulation as shown in Figure 7, is set to the electrode structure for second conductive type semiconductor layer 65c and the second electrode 64 thus.
That is, the support base 61 with conductivity can be arranged on the external circuit in the mounting surface being arranged in semiconductor light-emitting apparatus 60, thus is connected to external circuit.
As previously described, the electrode pad 68 being connected to the second electrode 64 can be formed on the first conductive type semiconductor layer 65a of second area B.In addition, the first conductive type semiconductor layer 65a insulate by passivation layer 66 and electrode pad 68.
Thus, the bond area of light-emitting device 60 can be set to the upper surface of second area B, that is, the first relative with the second major surfaces major surfaces.In addition, as mentioned above, because the first electrode 62 on the bottom of separation trough g is connected to by using Electrode connection unit 67 electrode pad 68 be positioned on the second area B of semiconductor multilayer body 65, so wire bonding unit 69 can be formed on the horizontal plane that remains basically stable with the upper surface of light-emitting device 60.
Fig. 8 is the side sectional view of the semiconductor light-emitting apparatus 60 of line II-II ' intercepting along Fig. 6.Fig. 9 is the side sectional view of the semiconductor light-emitting apparatus 60 of line III-III ' intercepting along Fig. 6.
With reference to Fig. 8, light-emitting device 60 can be stacked state, and wherein, the second electrode 64 and semiconductor multilayer body 65 are stacked in order to be had in the support base 61 of conductivity.The first electrode 62 shown in Fig. 8 can be have in the first contact hole zygosity (coupling) a part and can by dielectric isolation layer 63 around with the second electrode electric insulation.
Meanwhile, with reference to Fig. 9, light-emitting device 60 can be stacked state, wherein, the first electrode 62, second electrode 64 and semiconductor multilayer body 65 be formed in order support base 61 except being formed on porose region.First electrode 62 can have the part 62 ' extending through the first contact hole H1, and is connected to the first conductive type semiconductor layer 65a by part 62 '.Similar to the description with reference to Fig. 8, the first electrode 62 makes the second electrode 64 insulate with support base 61 by dielectric isolation layer 63.
So, according to present example, in final external circuit connects, the first contact structures being connected to the first conductive type semiconductor layer 65a of LED area A can be formed in (top of device) on the direction of the first major surfaces.In addition, the second contact structures being connected to the second conductive type semiconductor layer 65c of LED area A are formed by the support base 61 be positioned on the second major surfaces.
Figure 10 is the side sectional view of semiconductor light-emitting apparatus according to another embodiment of the present invention.
With reference to Figure 10, semiconductor light-emitting apparatus 100 according to present example can comprise semiconductor multilayer body 105, and semiconductor multilayer body 105 has the first conductive type semiconductor layer 105a, second conductive type semiconductor layer 105c and the active layer 105b between them.Semiconductor multilayer body 105 can have the first major surfaces respect to one another and the second major surfaces, and the first major surfaces is provided by the first conductive type semiconductor layer 105a, and the second major surfaces is provided by second conductive type semiconductor layer 105c.
Semiconductor multilayer body 105 can be divided into first area A and second area B by separation trough g.First area A can be set to the light emitting diode driven together with light-emitting diode, and second area B can be esd protection diode.In the present example, second area B can be used as the bond area for wire bonding, to be connected to external circuit.
In the present example, the second electrode 104 can be formed on the second major surfaces of semiconductor multilayer body 105, thus is connected to the second conductive type semiconductor layer 105c of first area A.The first electrode 102 being connected to the first conductive type semiconductor layer 105a of first area A can be arranged on the second major surfaces of semiconductor multilayer body 105.As in the present example, the first conductive type semiconductor layer 105a of the first electrode 102 by using contact hole H to be connected to first area A.
As shown in Figure 10, in the first area A of semiconductor multilayer body 105, at least one contact hole H can be formed as extending from second surface, simultaneously through second conductive type semiconductor layer 105c and active layer 105b, until the part in the first conductive type semiconductor layer 105a region is exposed.First conductive type semiconductor layer 105a can be exposed by contact hole H.
First electrode 102 is engaged with the exposed region of the first conductive type semiconductor layer 105a provided by contact hole H by the electrode unit 102 ' extended from the first electrode 102.Thus the first electrode 102 be positioned on the second major surfaces can be embodied as the electrical connection with the first conductive type semiconductor layer 105a.
Dielectric isolation layer 103 can be formed as easily by the first electrode 102 of being arranged on the second major surfaces of semiconductor multilayer body 105 and the second electrode 104 electrically separated.Dielectric isolation layer 103 can be formed as extending between the madial wall and the electrode unit 102 ' of the first electrode 102 of contact hole H.
So, the first electrode 102 not only can be electrically connected to the first conductive type semiconductor layer 105a of first area A, can also be electrically connected to the second conductive type semiconductor layer 105c of second area B.Meanwhile, the second electrode 104 being connected to the second conductive type semiconductor layer 105c of first area A also can be electrically connected to the first conductive type semiconductor layer 105a of second area B.
In addition, the second electrode 104 can have the exposed region T extending and be exposed to the outside of semiconductor multilayer body 105.As in the present example, exposed region T can be arranged in separation trough g, thus easily realizes the connection of the second electrode 104 and the first conductive type semiconductor layer 105a of second area B.
As shown in Figure 10, the second electrode 104 is connected to electrode pad 108 by Electrode connection unit 107.Electrode connection unit 107 can along the side surface formation of the semiconductor multilayer body 105 of second area B and by passivation layer 106 electric insulation.
Support base 101 can be arranged on the second major surfaces of semiconductor multilayer body 105, to obtain the wire structures formed by the first electrode 102, second electrode 104 and the dielectric isolation layer 103 between the first electrode 102 and the second electrode 104.
The support base 101 adopted in present example can be that dielectric base can comprising is connected respectively to the first electrode 102 and the second electrode 104 to reach the first outside contact conductor unit 112 and the second contact conductor unit 114.In the structure shown here, the contact structures of the corresponding first conductive type semiconductor layer 105a and the second conductive type semiconductor 105c that are attached to LED area A can have overall form of stretching out from support base 101 downwards.
As mentioned above, achieve in this support base by using the support base with the first contact conductor unit and the second contact conductor unit wherein Electrode connection to the form of external circuit, this form can by the form shown in composition graphs 6 and Fig. 7 and alternative electrode pad structure realize.
As mentioned above, according to embodiments of the invention, may be provided in novel semiconductor light-emitting structure and realize esd protection diode and the integrated scheme of light-emitting diode.Light-emitting diode can be implemented as with esd protection diode integrated.In addition, electrode is not formed in semiconductor layer surface (light-emitting area), but can form contact hole in the surface relative with semiconductor layer surface, thus the scheme improved can significantly improve luminous efficiency, and light-emitting area can be made to enlarge markedly.In addition, the multiple contact holes being distributed on appropriate location can be adopted, even thus stride across the relatively high efficiency that large region also promotes CURRENT DISTRIBUTION.
In certain embodiments, esd protection diode can be set to bond area, thus reduces defect, such as, when wire bonding by the defect of impacting short circuit that the damage that causes insulating barrier causes and so on.
Although multiple embodiments of part illustrate and describe the present invention in conjunction with the embodiments, it will be apparent to those skilled in the art, when not departing from the spirit and scope of the present invention be defined by the claims, can modify the present invention and change.
Claims (14)
1. a semiconductor light-emitting apparatus, described semiconductor light-emitting apparatus comprises:
Semiconductor multilayer body, the active layer that described semiconductor multilayer body comprises the first major surfaces respect to one another and the second major surfaces, provides the first conductive type semiconductor layer of described first major surfaces and provide the second conductive type semiconductor layer of described second major surfaces and be formed between described first conductive type semiconductor layer and described second conductive type semiconductor layer, described semiconductor multilayer body is divided into first area and second area by separation trough;
At least one contact hole, is formed as passing active layer from the second major surfaces of first area, thus is connected to a region of the first conductive type semiconductor layer;
First electrode, is formed on the second major surfaces of semiconductor multilayer body, is connected to the first conductive type semiconductor layer of first area, and is connected to the second conductive type semiconductor layer of second area by least one contact hole described;
Second electrode, the second major surfaces being formed in first area is connected to the second conductive type semiconductor layer of first area;
Electrode connection unit, by first conductive type semiconductor layer of described second Electrode connection to second area,
Wherein, the surface in the face of the second major surfaces of the first electrode has towards the bending part of the second major surfaces, thus the second conductive type semiconductor layer of contact second area.
2. semiconductor light-emitting apparatus as claimed in claim 1, described semiconductor light-emitting apparatus also comprises the support base with conductivity, and described support base is set to the second major surfaces of semiconductor multilayer body, to be connected to the first electrode.
3. semiconductor light-emitting apparatus as claimed in claim 2, wherein, described support base is formed by plating technic.
4. semiconductor light-emitting apparatus as claimed in claim 2, described semiconductor light-emitting apparatus also comprises the electrode pad be formed on the first conductive type semiconductor layer of described second area.
5. semiconductor light-emitting apparatus as claimed in claim 1, described semiconductor light-emitting apparatus also comprises support base, and the second major surfaces that described support base is arranged on described semiconductor multilayer body has and is connected respectively to described first electrode and the second electrode to reach the first outside contact conductor unit and the second contact conductor unit.
6. semiconductor light-emitting apparatus as claimed in claim 1, wherein, described second electrode has the region being exposed to described separation trough, and described Electrode connection unit forms the region of exposure to be connected to described second electrode along the side surface of the second area of described semiconductor multilayer body.
7. semiconductor light-emitting apparatus as claimed in claim 6, described semiconductor light-emitting apparatus also comprises the passivation layer on the side surface of the second area being formed in described semiconductor multilayer body, thus by the second area electric isolution of Electrode connection unit and described semiconductor multilayer body.
8. semiconductor light-emitting apparatus as claimed in claim 1, described semiconductor light-emitting apparatus also comprise be formed in described semiconductor multilayer body the second major surfaces on and the dielectric isolation layer be formed as described first electrode and described second electrode separation.
9. semiconductor light-emitting apparatus as claimed in claim 8, wherein, described dielectric isolation layer extends between the part being filled in contact hole of the madial wall of contact hole and the first electrode.
10. semiconductor light-emitting apparatus as claimed in claim 1, wherein, described second electrode comprises high reverse--bias ohmic contact layer.
11. semiconductor light-emitting apparatus as claimed in claim 10, wherein, described high reverse--bias ohmic contact layer comprises the material selected from the group be made up of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and their mixture.
12. semiconductor light-emitting apparatus as claimed in claim 1, wherein, at least one contact hole described is set to multiple.
13. semiconductor light-emitting apparatus as claimed in claim 1, wherein, described in the area ratio of the first area of described semiconductor multilayer body, the area of the second area of semiconductor multilayer body is large.
14. semiconductor light-emitting apparatus as claimed in claim 13, wherein, the second area of described semiconductor multilayer body has the area of 20% of the gross area being less than or equal to semiconductor multilayer body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110350684.4A CN103094274B (en) | 2011-11-01 | 2011-11-01 | Semiconductor light-emitting apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110350684.4A CN103094274B (en) | 2011-11-01 | 2011-11-01 | Semiconductor light-emitting apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103094274A CN103094274A (en) | 2013-05-08 |
| CN103094274B true CN103094274B (en) | 2016-02-10 |
Family
ID=48206662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110350684.4A Active CN103094274B (en) | 2011-11-01 | 2011-11-01 | Semiconductor light-emitting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103094274B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101476687B1 (en) * | 2013-10-24 | 2014-12-26 | 엘지전자 주식회사 | Display device using semiconductor light emitting device |
| DE102013112881A1 (en) | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
| KR20160037060A (en) * | 2014-09-26 | 2016-04-05 | 서울바이오시스 주식회사 | Light emitting device and method for fabricating the same |
| DE102014116512A1 (en) * | 2014-11-12 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and device with an optoelectronic semiconductor component |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102117821A (en) * | 2009-12-31 | 2011-07-06 | 首尔Opto仪器股份有限公司 | Light emitting device |
| CN102227807A (en) * | 2008-11-28 | 2011-10-26 | 欧司朗光电半导体有限公司 | Radiation-emitting semiconductor chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8008683B2 (en) * | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
-
2011
- 2011-11-01 CN CN201110350684.4A patent/CN103094274B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227807A (en) * | 2008-11-28 | 2011-10-26 | 欧司朗光电半导体有限公司 | Radiation-emitting semiconductor chip |
| CN102117821A (en) * | 2009-12-31 | 2011-07-06 | 首尔Opto仪器股份有限公司 | Light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103094274A (en) | 2013-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8723206B2 (en) | Semiconductor light emitting device with contact hole passing through active layer | |
| US20180233630A1 (en) | Optoelectronic device | |
| US9472742B2 (en) | Light emitting device and light unit having the same | |
| US8450762B2 (en) | Light emitting device | |
| US6861677B2 (en) | Package of lightemitting diode with protective element | |
| US6693306B2 (en) | Structure of a light emitting diode and method of making the same | |
| CN104241483B (en) | Luminescent device | |
| US8536591B2 (en) | Light emitting device and lighting system | |
| CN105280772A (en) | Light emitting diode and method of fabricating the same | |
| CN102891160A (en) | Semiconductor light emitting device and light emitting apparatus | |
| CN107210352A (en) | Light-emitting component | |
| CN103094274B (en) | Semiconductor light-emitting apparatus | |
| KR20080058724A (en) | A luminous element having numerous cells | |
| CN104241459A (en) | Light emitting diode device and package | |
| CN102214763B (en) | Luminescent device, light emitting device package and illuminator | |
| US20130168718A1 (en) | Semiconductor light emitting device and led module | |
| CN102237353A (en) | LED (light emitting diode) packaging structure and manufacturing method thereof | |
| JP2013069802A (en) | Semiconductor light-emitting device | |
| KR101711960B1 (en) | Semiconductor light emitting device | |
| KR20100133652A (en) | Semiconductor light emitting device | |
| KR20120107383A (en) | Light emitting diodes with vertical quantum well and its manufacture method | |
| KR20120006257A (en) | Electrode, light emitting device, light emitting device package, and lighting system | |
| CN101494260B (en) | LED element | |
| EP2573827B1 (en) | Semiconductor light emitting device | |
| TWI445209B (en) | Semiconductor light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |