CN103092447A - Graphical circuit structure, manufacturing method thereof and application thereof - Google Patents

Graphical circuit structure, manufacturing method thereof and application thereof Download PDF

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Publication number
CN103092447A
CN103092447A CN2013100231622A CN201310023162A CN103092447A CN 103092447 A CN103092447 A CN 103092447A CN 2013100231622 A CN2013100231622 A CN 2013100231622A CN 201310023162 A CN201310023162 A CN 201310023162A CN 103092447 A CN103092447 A CN 103092447A
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material layer
setting regions
graphical
transparent conductive
circuit structure
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CN2013100231622A
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CN103092447B (en
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陈新江
钱水蓉
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Hanano Material Science And Technology Co Ltdsuzhou
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Hanano Material Science And Technology Co Ltdsuzhou
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Abstract

The invention discloses a graphical circuit structure, a manufacturing method thereof and application thereof. The technical scheme is that an insulation material layer is arranged in a covered mode in a zone outside a visible zone which is used for arranging of a transparent conducting electrode, especially in a zone for forming of a circuit routing structure, the circuit routing structure is formed on the surface of the insulation material layer, and the problems that patterning of a transparent conducting material in the zone for forming the circuit routing structure is not complete or has residual so that internal short circuit fault of the circuit routing structure happens and the like are avoided. Technology is simple, cost is low, large-scale implementation is easy, product performance can be effectively improved, product yield can be improved, and the graphical circuit structure can be widely used in photoelectricity devices and electronic equipment.

Description

Graphical circuit structure, its preparation method and application
Technical field
The present invention be more particularly directed to a kind of graphical circuit structure, its preparation method and application.
Background technology
Along with popularizing of smart mobile phone, touch technology has become the important means that improves man-machine conversation efficient.In numerous touch technologies, capacitance touching control reaches than factors such as long lives because of better experience sense (only needing to touch gently), simplicity (need not to proofread and correct), has obtained application on a series of terminals such as smart mobile phone, notebook, palm PC.
With regard to the structure of capacitive touch screen, the patterned transparent conductive layer that is positioned at visible area reaches the core that has consisted of whole touch-control circuit in the connecting circuit of non-visible area.In the design of touch-screen, the border width of the space that connecting circuit is shared and touch-screen screen has direct relation, require touch-screen narrow limit design current, namely requiring needs to make thinner, more intensive circuit trace under the smaller the better prerequisite of the design of frame.Will certainly require like this circuit itself more and more thinner, the distance between circuit and circuit is also more and more less.Present touch-screen normally adopts the method for etching or printing to realize the patterning of visible area conductive layer, but not the circuit of visible area mainly adopts the techniques such as ald, serigraphy or laser-induced thermal etching to realize, wherein, laser-induced thermal etching is applied in the pattern etched of visible area and non-visible area circuit structure just more and more because of advantages such as more efficient, environmental protection.but for mainly by one-dimensional material, carbon nano-tube for example, the transparency conductive electrode of the formation such as metal and metal oxide nano-wire, often there is following defective in the laser-induced thermal etching method, namely, whole or large live width (more than 40 μ m) etching meeting are produced etching not thorough, the problems such as etch residue splashes, and then cause transparent conductive material to have residual in the zone of P.e.c. Wiring structure, in the situation that enough little these the residual meetings of adjacent two circuit spacings cause the connecting circuit short circuit, this will reduce product yield greatly, have a strong impact on production, can hinder simultaneously laser etching technology in the application in novel conductive film field.
Summary of the invention
For deficiency of the prior art, one of purpose of the present invention is to provide a kind of preparation method of graphical circuit structure, with the problems such as short circuit of stopping to cause because of residual transparent conductive material in the zone that is used to form the circuit trace structure.
For achieving the above object, the preparation method of the graphical circuit structure of the present invention's employing comprises:
(1) form transparent conductive material layer at least in the first setting regions of substrate surface;
(2) form insulation material layer in the second setting regions of substrate surface;
(3) at described insulation material layer circuit forming surface Wiring structure, and described circuit trace structure is electrically connected to transparent conductive material layer.
Further, described the second setting regions is around being arranged at around the first setting regions, and the inner edge portion of described at least insulation material layer engages with the outer edge of transparent conductive material layer.
As one of comparatively preferred embodiment, this preparation method also can comprise:
After step (1) is completed, along the direction vertical with substrate surface, the selection area between the first setting regions and the second setting regions is carried out rupturing operation, cutting off the degree of depth supports to substrate surface or gos deep in base material, thereby the transparent conductive material layer and the second setting regions that are formed in the first setting regions are cut off fully, carried out thereafter the operation of step (2).
As one of application scheme more specifically, this preparation method can comprise following concrete steps:
(1) form at least graphical transparency conductive electrode in the visible area of substrate surface;
(2) the non-visible area except visible area and the intersection between described visible area carry out etching operation at substrate surface, and etch depth supports to substrate surface or gos deep in base material, thereby transparency conductive electrode and non-visible area are cut off fully;
(3) cover insulating material in described non-visible area and form insulation material layer;
(4) the circuit trace structure that is connected with the transparency conductive electrode edge electric in insulation material layer surface formation.
Two of purpose of the present invention is to provide a kind of graphical circuit structure, comprising:
At least be distributed in the interior transparent conductive material layer of the first setting regions of substrate surface;
Be distributed in the interior circuit trace structure of the second setting regions of substrate surface, described circuit trace structure is electrically connected to transparent conductive material layer;
And, be formed at the insulation material layer in described the second setting regions, and described circuit trace structure is formed at described insulation material layer surface.
Further, described the second setting regions is around being arranged at around the first setting regions, and the inner edge portion of described at least insulation material layer engages with the outer edge of transparent conductive material layer.
Described transparent conductive material layer can adopt all kinds of transparent conductive materials that those skilled in the art know to form, and its material can comprise metal, non-metallic conducting material or its combination;
Described metal material can comprise any one or the two or more combinations in the thin metal layer (such as the coating of metal and/or its oxide such as ITO, ZnO, sedimentary deposit etc.) of metal nanometer line (such as the nano wire of any one or its alloy in gold, silver, copper etc.) or metal nanoparticle (such as nano particle or the cluster of any one or its alloy in gold, silver, copper etc.) and continuous distribution;
Described non-metallic conducting material can comprise any one or the two or more combinations in the nonmetal thin layer of nonmetal conducting nanowires or nano particle and continuous distribution.Wherein, described " nonmetal " can be inorganic material (as, carbon and silicon), organic material (as, conducting polymer composite) or its combination.For example, aforementioned nonmetal conducting nanowires can be carbon nano-tube, silicon nanowires, and the nonmetal thin layer of continuous distribution can be conducting polymer composite coating, grapheme material etc.
More specifically, described circuit trace structure is electrically connected to the edge part of transparent conductive material layer.
Another object of the present invention is to provide the former figures circuit structure or by the application of graphical circuit structure in photoelectric device and/or electronic equipment of preceding method preparation.
Another purpose of the present invention is to provide a kind of touch-screen, comprises graphical circuit structure as above or with the graphical circuit structure of the preparation of method as mentioned above.
A further object of the present invention is to provide a kind of touch control device, comprises graphical circuit structure as above or with graphical circuit structure or the touch-screen as above of the preparation of method as mentioned above.
compared with prior art, advantage of the present invention is at least: by the zone beyond the formation transparency conductive electrode, especially for covering insulation material layer in the zone that forms the circuit trace structure, and the circuit trace structure is formed at the insulation material layer surface, avoided transparency conductive electrode in manufacturing process because of patterning that whole or large live width (more than 40 μ m) etching are produced thoroughly or transparent conductive material have residual in the zone that is used to form the circuit trace structure, and then cause wire in the circuit trace structure because of the problem of residual transparent conductive material short circuit.Technique of the present invention is simple, and is with low cost, is easy to scale and implements, and can effectively improve properties of product, improves product yield.
Description of drawings
Fig. 1 is the local amplification plan view of graphical circuit structure in a preferred embodiment of the present invention;
Fig. 2 is the cross-sectional view of graphical circuit structure shown in Figure 1;
Description of reference numerals: 1-visible area, the non-visible area of 2-, 3-etching area, 11-transparent base, 12-pattern conductive coating area, 21-regions of conductive material, 22-insulation material layer, 23-circuit trace structural sheet.
Embodiment
Because the deficiencies in the prior art, the present invention aims to provide a kind of graphical circuit structure and preparation method thereof, below its technical scheme is elaborated.
As one aspect of the present invention, the preparation method of this graphical circuit structure comprises:
(1) form transparent conductive material layer at least in the first setting regions of substrate surface;
(2) form insulation material layer in the second setting regions of substrate surface;
(3) at described insulation material layer circuit forming surface Wiring structure, and the circuit trace structure is electrically connected to transparent conductive material layer, preferred, the circuit trace structure is electrically connected to the edge part of transparent conductive material layer.
In some concrete application scheme, described the second setting regions system is around being arranged at around the first setting regions, and the inner edge portion of described at least insulation material layer engages with the outer edge of transparent conductive material layer.
As one of comparatively preferred embodiment, this preparation method also can comprise:
Step (1X): after step (1) is completed, along the direction vertical with substrate surface, the selection area between the first setting regions and the second setting regions is carried out rupturing operation, cutting off the degree of depth supports to substrate surface or gos deep in base material, thereby the transparent conductive material layer and the second setting regions that are formed in the first setting regions are cut off fully, carried out thereafter the operation of step (2).
Aforementioned rupturing operation can be to utilize infrared laser or Ultra-Violet Laser to carry out etching to transparency conducting layer, also can utilize classical acid alkaline etching method to carry out the pattern etching to transparency conducting layer.
By the operation of abovementioned steps (1X), can further block the impact that transparent conductive material layer may cause the inner structure of circuit trace structure, the boost device yield.
Postscript, particularly, aforementioned transparent conductive material layer can comprise the graphical transparency conductive electrode that is mainly formed by monodimension nanometer material, described monodimension nanometer material can be selected carbon nano-tube and/or metal gold, silver and copper nano-wire and/or metal oxide (as zinc paste etc.) etc., but is not limited to this.
Attached reaching; consider in the preparation process of the device that comprises the elements such as graphical transparency conductive electrode; usually also need with water, ethanol, sherwood oil equal solvent, device to be carried out the operations such as cleaning treatment; so; the aforementioned dielectric material should adopt the material that these solvents are presented stability property and do not degrade; such as, can select the high molecular polymer materials such as organic siliconresin, epoxy resin, polyurethane or bimaleimide resin.
Reach, the aforementioned circuit Wiring structure can be that the patterned circuit that forms by techniques such as ald, serigraphys or full wafer zone are through the formed conducting wire of laser-induced thermal etching again.In general, the live width of the circuit that is formed by serigraphy is 100 μ m approximately, and the live width of the circuit that is formed by laser-induced thermal etching again by whole printed conductive layer can be down to that approximately 40 μ m are even less.
Summarize it, the present invention system is by before preparing the circuit trace structure that coordinates with graphical transparent conductive material layer, cover in the zone that is used for arranging the circuit trace structure problem that insulating material is stopped short circuit between the wire of the circuit trace structure that causes because of residual transparent conductive material, and then effectively improved the yields of product, reduced production cost.
Obviously, the present invention can be widely used in all kinds of equipment that comprise graphical transparent conductive material layer, such as, photovoltaic device, LED device or other electronic equipment.
Consult Fig. 1-Fig. 2, as a preferred embodiment of the present invention, it relates to a kind of preparation method who is applied to the graphical circuit structure of touch-screen, comprises following concrete steps:
(1) at least at transparent base 11(hereinafter to be referred as base material) surface the graphical transparency conductive electrode 12 of the interior formation of visible area 1;
(2) at substrate surface except visible area 1(dotted line left field) non-visible area 2(dotted line right side area) and described visible area between intersection 3(namely, etching area) carry out etching operation, etch depth supports to substrate surface or gos deep in base material, thereby make pattern conductive coating area 12(namely, transparency conductive electrode) with the residual conductive material of non-visible area zone 21(namely, the transparent conductive material residual layer) cut off fully;
(3) cover insulating material in described non-visible area, and form insulation material layer 22 by hot blast, the heat curing such as infrared and ultraviolet light polymerization mode;
(4) the graphical circuit trace structural sheet 23 that is connected with the transparency conductive electrode edge electric in insulation material layer surface formation.
Obviously, by aforementioned operation, can stop graphical transparency conductive electrode fully to the impact that each wire in the circuit trace structure may cause, prevent the defectives such as short circuit.
If select the high molecular polymer materials such as organic siliconresin or epoxy resin, polyurethane or bimaleimide resin as insulating material, aforementioned curing mode can adopt hot blast or infrared curing, and solidification temperature is 70-120 ℃.Also can adopt the ultraviolet light polymerization mode.
If the modes such as employing serigraphy silver slurry form former figures circuit trace structure, the mode of solidifying the silver slurry can be selected hot blast or infrared curing, and solidification temperature is 120-160 ℃.Also can adopt the ultraviolet light polymerization mode.
Below in conjunction with some more specifically embodiment, technical scheme of the present invention is further described in detail.
Embodiment 1
The present embodiment at first provide a kind of as transparency conductive electrode be covered on base material, with the carbon nano tube transparent conductive thin-film of the argyle designs of 4.3 inches.Carry out continuous etching operation around visible area, etch depth should support to substrate surface or go deep into base material inside, uses visible area transparency conductive electrode and non-visible area are cut off fully.By accurate location, the method that adopts flexographic printing argyle design frame (being visible area) outside, print in the zone (being non-visible area) of silver-colored line and print epoxy resin, through 80 ℃ of baking oven heated-air dryings, epoxy resin surface printed silver slurry by serigraphy after curing, make it form the circuit trace that is connected with the electrode material edge, namely get capacitive touch screen sensor through 130 ℃ of hot-air seasonings.
Embodiment 2
The present embodiment at first provide a kind of as transparency conductive electrode be covered on base material, with the nano silver wire transparent conductive film of the argyle designs of 4.3 inches.Carry out continuous etching operation around visible area, etch depth should support to substrate surface or go deep into base material inside, uses visible area transparency conductive electrode and non-visible area are cut off fully.By accurate location, the method that adopts flexographic printing argyle design frame (being visible area) outside, print in the zone (being non-visible area) of silver-colored line and print organic siliconresin, through 120 ℃ of baking oven heated-air dryings, surface of silicone resin printed silver slurry by serigraphy after curing, make it form the circuit trace that is connected with the electrode material edge, namely get capacitive touch screen sensor through 130 ℃ of hot-air seasonings.
Embodiment 3
At first the present embodiment provides a kind of and has been covered in transparent conductive film on base material, that form with the carbon nano-tube of the bar patens of 3.4 inches and nano silver wire codeposition as transparency conductive electrode.Carry out continuous etching operation around visible area, etch depth should support to substrate surface or go deep into base material inside, uses visible area transparency conductive electrode and non-visible area are cut off fully.By accurate location, the method that adopts flexographic printing bar paten frame (being visible area) outside, print in the zone (being non-visible area) of silver-colored line and print polyurethane, through 100 ℃ of baking oven heated-air dryings, polyurethane surface printing full wafer silver slurry by flexographic printing after curing, it is connected with the electrode material edge, through 130 ℃ of hot-air seasonings, then carve the circuit trace structure by laser-induced thermal etching and namely get capacitive touch screen sensor.
Need to prove, the above is only preferred embodiment of the present invention, is not limited to the present invention, all any modifications of doing within principle of the present invention and spirit, is equal to and replaces and improvement etc., within all just being included in protection scope of the present invention.

Claims (10)

1. graphical circuit structure comprises:
At least be distributed in the interior transparent conductive material layer of the first setting regions of substrate surface;
And, being distributed in the circuit trace structure in the second setting regions of substrate surface, described circuit trace structure is electrically connected to transparent conductive material layer;
It is characterized in that, it also comprises:
Be formed at the insulation material layer in described the second setting regions, it is surperficial that described circuit trace structure is located at described insulation material layer.
2. graphical circuit structure according to claim 1, is characterized in that, described the second setting regions is around being arranged at around the first setting regions, and the inner edge portion of described insulation material layer engages with the outer edge of transparent conductive material layer.
3. graphical circuit structure according to claim 1, is characterized in that, described circuit trace structure is electrically connected to the edge part of transparent conductive material layer.
4. the described graphical circuit structure of any one according to claim 1-3, is characterized in that, the material of described transparent conductive material layer comprises metal and/or non-metallic conducting material;
Described metal material comprises any one or the two or more combinations in the thin metal layer of metal nanometer line or metal nanoparticle and continuous distribution;
Described non-metallic conducting material comprises any one or the two or more combinations in the nonmetal thin layer of nonmetal conducting nanowires or nano particle and continuous distribution.
5. the preparation method of a graphical circuit structure, is characterized in that, comprising:
(1) form at least the transparent conductive material layer of homogeneous in the first setting regions of substrate surface;
(2) form insulation material layer in the second setting regions of substrate surface;
(3) at described insulation material layer circuit forming surface Wiring structure, and the interior transparent conductive material layer of described circuit trace structure and described the first setting regions is electrically connected to.
6. the preparation method of graphical circuit structure according to claim 5, is characterized in that, described the second setting regions is around being arranged at around the first setting regions, and the inner edge portion of described insulation material layer engages with the outer edge of transparent conductive material layer.
7. the preparation method of the described graphical circuit structure of any one according to claim 5-6, is characterized in that, it also comprises:
After step (1) is completed, along the direction vertical with substrate surface, the selection area between the first setting regions and the second setting regions is carried out rupturing operation, cutting off the degree of depth supports to substrate surface or gos deep in base material, thereby the transparent conductive material layer and the second setting regions that are formed in the first setting regions are cut off fully, carried out thereafter the operation of step (2).
8. the preparation method of a graphical circuit structure, is characterized in that, comprising:
(1) form at least graphical transparency conductive electrode in the visible area of substrate surface;
(2) the non-visible area except visible area and the intersection between described visible area carry out etching operation at substrate surface, and etch depth supports to substrate surface or gos deep in base material, thereby transparency conductive electrode and non-visible area are cut off fully;
(3) cover insulating material in described non-visible area and form insulation material layer;
(4) the circuit trace structure that is connected with the transparency conductive electrode edge electric in insulation material layer surface formation.
9. the described graphical circuit structure of any one or by the application of graphical circuit structure in photoelectric device and/or electronic equipment of the described method of any one in claim 5-8 preparation in claim 1-4.
10. a touch control device, is characterized in that, it comprises the described graphical circuit structure of any one in claim 1-4 or by the graphical circuit structure of the described method preparation of any one in claim 5-8.
CN201310023162.2A 2013-01-22 2013-01-22 Graphical circuit structure, its preparation method and application Active CN103092447B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105899042A (en) * 2016-04-15 2016-08-24 广东欧珀移动通信有限公司 Heat conduction member, production method thereof, and intelligent device provided with heat conduction member
CN108919999A (en) * 2018-06-30 2018-11-30 云谷(固安)科技有限公司 Touch panel and preparation method thereof, display device
CN111309192A (en) * 2019-11-06 2020-06-19 江西蓝沛泰和新材料有限公司 Touch screen, conductive film thereof and preparation method of conductive film
WO2023222100A1 (en) * 2022-05-18 2023-11-23 利多(香港)有限公司 Biosensor and preparation method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101950216A (en) * 2010-09-26 2011-01-19 友达光电股份有限公司 Making method of touch panel
CN202422065U (en) * 2011-12-31 2012-09-05 宸鸿科技(厦门)有限公司 Touch panel

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101950216A (en) * 2010-09-26 2011-01-19 友达光电股份有限公司 Making method of touch panel
CN202422065U (en) * 2011-12-31 2012-09-05 宸鸿科技(厦门)有限公司 Touch panel

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105899042A (en) * 2016-04-15 2016-08-24 广东欧珀移动通信有限公司 Heat conduction member, production method thereof, and intelligent device provided with heat conduction member
CN108919999A (en) * 2018-06-30 2018-11-30 云谷(固安)科技有限公司 Touch panel and preparation method thereof, display device
CN111309192A (en) * 2019-11-06 2020-06-19 江西蓝沛泰和新材料有限公司 Touch screen, conductive film thereof and preparation method of conductive film
WO2023222100A1 (en) * 2022-05-18 2023-11-23 利多(香港)有限公司 Biosensor and preparation method therefor

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Address after: 215000, 07, 102, Jinji Road, northwest Suzhou, Jinji Road, Suzhou Industrial Park, Jiangsu Province

Patentee after: Hanano Material Science and Technology Co., Ltd.Suzhou

Address before: Suzhou City, Jiangsu Province, Suzhou Industrial Park 215000 Xinghu Street No. 218 BioBAY A4-508

Patentee before: Hanano Material Science and Technology Co., Ltd.Suzhou