CN103091936B - Method for achieving all-optical logic and operation based on light absorption bleaching effect - Google Patents
Method for achieving all-optical logic and operation based on light absorption bleaching effect Download PDFInfo
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- CN103091936B CN103091936B CN201310024966.4A CN201310024966A CN103091936B CN 103091936 B CN103091936 B CN 103091936B CN 201310024966 A CN201310024966 A CN 201310024966A CN 103091936 B CN103091936 B CN 103091936B
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000000694 effects Effects 0.000 title claims abstract description 31
- 238000004061 bleaching Methods 0.000 title claims abstract description 24
- 230000031700 light absorption Effects 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000013078 crystal Substances 0.000 claims abstract description 31
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000005247 gettering Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 abstract description 5
- 230000007246 mechanism Effects 0.000 abstract description 4
- 230000009022 nonlinear effect Effects 0.000 abstract description 4
- 239000004038 photonic crystal Substances 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 2
- 239000013307 optical fiber Substances 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 241000446313 Lamella Species 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- -1 aluminium arsenic Chemical compound 0.000 description 1
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- 238000005388 cross polarization Methods 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a method for achieving all-optical logic and operation based on light absorption bleaching effect. The steps of the method comprise that an incidence light beam A and an incidence light beam B are respectively used as input signals of optical logic and operation to be lighted on a semi-conductor crystal, a receiver is arranged on the outgoing direction of the semi-conductor crystal, transmission light C is used as an output signal to be detected and acquired by the receiver, if only the light beam B exists, the light beam A does not exist, the bleaching effect is achieved, the transmission light C received by the receiver is smaller than a light intensity threshold value with the logic true, if and only if the light beam A and the light beam B irradiate on the same zone, based on the bleaching effect, the transmission light C received by the receiver is larger than the light intensity threshold value with the logic true. The method does not rely on resonance, polarization, interference, a photonic crystal or optical fiber nonlinear effect and other mechanisms, a system is simple, stability is good, and integration level is high.
Description
Technical field
The invention belongs to optical information processing and technical field of semiconductors, relate to a kind of method that bleaching effect based on light absorption realizes all-optical logic and computing.
Background technology
The world today develops rapidly along with computer technology, and the development of any one technology all can be subject to the restriction of self intrinsic physical characteristics, and robot calculator is no exception.The finite rate that electronics calculates, and day by day ripe along with VLSI (very large scale integrated circuit) technique, integrated level is close to saturated, so the potentiality of integrated circuit electronic computing machine have almost been dug to the greatest extent.
The light velocity three orders of magnitude larger than electronics saturation drift velocity, therefore full optical oomputing velocity ratio based on the computing of electron device fast more than 1000 times in theory, and the intersection of light beam can not affect the transmission of signal, so its transmission path can intersect, there is no the puzzlement that electronic circuit multilayer is integrated.The concurrent operation carrying out single-instruction multiple-data stream (SIMD) (Single Instruction MultipleData, SIMD) is good at by photonic computer, so can directly process the information such as image, voice efficiently.
The realization of all-optical logic gate is one of gordian technique of full optical computer.Be widely used in the all-optical logical AND gate of optical communication network at present, mainly adopt the effects such as semiconductor optical amplifier (SOA) Nonlinear optical loop mirror, cross polarization and four-wave mixing to realize.The problem of this scheme is that the random variation of polarization and phase place is comparatively large on Output rusults impact, complex structure is difficult to integrated.
Other published all-optical logic gate technique, because depending on the mechanism such as resonance, polarization, interference, photonic crystal or fiber nonlinear effect, so have that complex structure, response speed are slow, poor stability or the problem such as data parallel integrated level is low.
Summary of the invention
The object of this invention is to provide a kind of method that bleaching effect based on light absorption realizes all-optical logic and computing, solve that the system complex, the response speed that exist in prior art are slow, poor stability and the low problem of integrated level.
The technical solution adopted in the present invention is, a kind of bleaching effect based on light absorption realizes the method for all-optical logic and computing, it is characterized in that, the method is implemented according to following steps:
The light beam A of incidence and light beam B are irradiated to semiconductor crystal as the input signal of light logic and computing, using the transmitted light C that occurs at semiconductor crystal opposite side as output signal,
When light beam A that and if only and if light beam B are all radiated at the same position on semiconductor crystal, transmitted light C is greater than the Intensity threshold of Boolean logic, and the logical signal of output is "True";
When without any incident beam, or when only having a branch of incident beam, then transmitted light C is less than Intensity threshold, and the logical signal namely exported is "false", the all-optical logic in various situation and operation relation with reference to shown in following table 1,
Table 1 light beam A, logical relation table between light beam B and transmitted light C
| Light beam A | Light beam B | Transmitted light C |
| 0 (unglazed) | 0 (unglazed) | 0 (lower than Intensity threshold) |
| 0 (unglazed) | 1 (having light) | 0 (lower than Intensity threshold) |
| 1 (having light) | 0 (unglazed) | 0 (lower than Intensity threshold) |
| 1 (having light) | 1 (having light) | 1 (higher than Intensity threshold) |
The invention has the beneficial effects as follows: do not rely on the mechanism such as resonance, polarization, interference, photonic crystal or fiber nonlinear effect, system be simple, good stability and integrated level high.
Accompanying drawing explanation
Fig. 1 is the logic "and" operation principle schematic of the inventive method based on photobleaching effect;
Fig. 2 is the time series schematic diagram of the light pulse in the inventive method.
Embodiment
Bleaching effect based on light absorption of the present invention realizes the method for all-optical logic and computing, and the bleaching effect based on light absorption realizes all-optical logic and computing.So-called " bleaching " effect, also claiming coherent light " hole burning " effect, is a kind of nonlinear optical effect, when irradiating the direct band-gap semicondictor crystal such as gallium arsenide when femtosecond laser, can in the corresponding energy state instantaneously a large amount of valence-band electrons being energized into conduction band.Because the hot carrier energy state relaxation time is greatly about hundred femtosecond magnitudes, if so there is another bundle femtosecond laser to be also radiated at this place at this moment, the photoproduction thermoelectron produced due to front beam of laser has also had little time relaxation, still occupy the corresponding energy state in conduction band in a large number, hinder valence-band electrons and continue absorb photons upwards transition, therefore the second bundle laser is absorbed hardly, directly transmit from wafer, this phenomenon is referred to as to act on " bleaching " of light absorption, determined by Pauli exclusion principle.
The implementation process of the inventive method is, as shown in Figure 1, a semiconductor crystal plate is set before receiver, the light beam A of incidence and light beam B are irradiated on semiconductor crystal as the input signal of light logic and computing, using the transmitted light C that transmits at semiconductor crystal opposite side as output signal, its light intensity can be received device detection and receive
When light beam A that and if only and if light beam B are all radiated at the same area of semiconductor crystal plate, due to " bleaching " effect, in light beam B, most of photon can not be absorbed by semiconductor crystal, therefore transmitted light C be greater than Boolean logic Intensity threshold (namely artificial regulation logic " very ", light intensity separatrix between logic "false"), its effect is equivalent to 1 & 1=1, and the logical signal of output is "True";
When without any incident beam, or when only having a branch of incident beam, then transmitted light C is less than Intensity threshold, its effect is equivalent to 1 & 0=0 or 0 & 1=0 or 0 & 0=0, namely the logical signal exported is "false", in a word, the all-optical logic in various situation and operation relation (A & B=C) as shown in table 1 below
Table 1 light beam A, logical relation table between light beam B and transmitted light C
| Light beam A | Light beam B | Transmitted light C |
| 0 (unglazed) | 0 (unglazed) | 0 (lower than Intensity threshold) |
| 0 (unglazed) | 1 (having light) | 0 (lower than Intensity threshold) |
| 1 (having light) | 0 (unglazed) | 0 (lower than Intensity threshold) |
| 1 (having light) | 1 (having light) | 1 (higher than Intensity threshold) |
Technology essential factor in the inventive method also comprises:
1) launching spot of light beam B should be less than the launching spot of light beam A, and light beam B need through the delay process of 100 ~ 1000fs, to ensure that light beam A has caused bleaching effect at incident area, the sequential relationship of light beam A and light beam B as shown in Figure 2, in fig. 2, t
drepresent light beam B and should lag behind the time delay that light beam A incides semiconductor crystal, the response time needed for photoelectric effect, its numerical value is hundred femtosecond magnitudes, depends primarily on this time delay in the inventive method with the execution speed of logical operation.
2) incident light beam A is identical with the wavelength of light beam B, and the Intrinsic Gettering notch that wavelength should be less than semiconductor crystal is long, to ensure Intrinsic Gettering.
3) incident light beam A and the pulsewidth (full width at half maximum) of light beam B are femtosecond magnitude; Ensure that the angle between light beam A and light beam B is less than 20 ° to reduce reflection to greatest extent, ideally light beam A and light beam B vertical incidence semiconductor crystal simultaneously.
4) semiconductor crystalline material should select direct band-gap semicondictor crystal, and the short material of preferred carrier lifetime is to improve repeated work frequency, and the one of gallium arsenide, indium phosphide, indium gallium arsenic, gallium nitride, gallium aluminium arsenic specifically selected by the material of semiconductor crystal.
5) when only there being a branch of incident light, the operation result after "AND" logic should be logic "false", and the light intensity namely through semiconductor lamella must lower than the Intensity threshold of Boolean logic.Consider thickness D, the optical absorption depth d of semiconductor lamella, incident light light intensity I
0and pass is between transmitted light light intensity I: I=I
0exp (-D/d), namely the theoretical value of transmissivity is exp (-D/d), and therefore semiconductor film layer thickness D should be 2 ~ 4 times of optical absorption depth d, and the Intensity threshold of Boolean logic should be set as I
01.2 ~ 3 times of exp (-D/d).(" semiconductor lamella " is here " semiconductor crystal ")
6) direct band-gap semicondictor crystal generally has satellite energy valley (also claiming and the minor energy valley of main energy valley non-equivalence), if the energy level difference of itself and main energy valley is E
k, then the photon energy of incident laser (light beam A and light beam B) should be greater than semiconductor energy gap E
gbut be less than E
g+ E
k, to avoid due to " transferred electron effect ", thermoelectron is just shifted rapidly at the beginning of initial distribution to satellite energy valley.
7) to determine the wavelength of two-way input beam signal identical for the principle of work of the inventive method, therefore the inventive method has the possibility of direct cascade for door, consider that light intensity can be lost step by step, want the number improving direct cascade, light transmission when transmitted light C should be made to be logic "True" is large as much as possible, concrete methods of realizing is that working environment is set to cryogenic conditions, cryogenic temperature is less than 50K, effectively can reduce the phon scattering probability in semiconductor crystal, thus enhancing the present invention is applied to " bleaching " effect with light absorption in door.
8) receiver selects ultrafast PIN photodiode or other corresponding pick-up unit, also can select the posterior all-optical logic gates of cascade, and receiver can realize single-chip integration with above-mentioned AND gate structure.
9) method realizing logic sum gate based on above-mentioned light beam is: incident light beam A and the via hole of light beam B by etching on above-mentioned direct band-gap semicondictor crystal, direct irradiation on the receiver, can realize logical OR computing.Therefore, this OR-gate is easy to realize highly integrated with AND gate of the present invention.
Embodiment
Laser instrument employing wavelength is the Ti∶Sapphire laser femtosecond pulse laser of 800nm, pulse width 100fs, and beam divergence angle is less than 0.002rad, and pulse energy is about 500nJ, and repetition frequency is set as 20MHz, and the spot diameter at light-emitting window place is less than 3mm; Half-reflecting half mirror is adopted a light beam to be divided into two light beams, i.e. light beam A and light beam B; The optical path difference of light beam A and light beam B is set as 0.09 ~ 0.3mm, i.e. time delay 300 ~ 1000fs.
Semiconductor crystal adopts involuntary doping semi-insulation gallium arsenide, and dislocation desity (EPD) is less than 5 × 10
4cm
-2, crystal orientation is (100) ± 0.5 °, and carrier lifetime is less than 10ns.Consider that the absorption degree of depth d of gallium arsenide to 800nm wavelength laser is about 10 μm, so first carry out machinery, chemical reduction processing to gallium arsenide, then local etching gallium arsenide thickness D to 40 μm.
As D=4d and when only having incident beam A or beam B irradiates, transmissivity is 1.83% in theory, the Intensity threshold choosing Boolean logic is 5% of incident intensity.Receiver adopts THORLABS DET210 high speed PIN photodiode, and the transmitted light C utilizing inner photoeffect to receive, changes into visible electric impulse signal on digital storage oscilloscope.
When gallium arsenide working environment is low temperature 15K, photocurrent amplitude corresponding to transmitted light pulse is about 40% ~ 70% of incident light pulse photocurrent amplitude, much larger than the Intensity threshold of Boolean logic.
The photobleaching effect that method of the present invention produces when irradiating direct band-gap semicondictor by femtosecond laser realizes all-optical logic AND operation, its input signal is two bundle femto-second laser pulses (intensity signal represents 0 and 1 of Boolean calculation), after the bleaching effect modulation of direct band-gap semicondictor light absorption under low temperature environment, the light intensity of transmitted light is output signal.Owing to not relying on the mechanism such as resonance, polarization, interference, phase-modulation, photonic crystal or fiber nonlinear effect, so advantage of the present invention to be structure simple, system stability, be convenient to integrated, can on semiconductor crystal, adopt ic manufacturing process to realize.
Claims (8)
1. realize a method for all-optical logic and computing based on the bleaching effect of light absorption, it is characterized in that, the method is implemented according to following steps:
The light beam A of incidence and light beam B are irradiated to semiconductor crystal as the input signal of light logic and computing, using the transmitted light C that occurs at semiconductor crystal opposite side as output signal,
When light beam A that and if only and if light beam B are all radiated at the same area on semiconductor crystal, transmitted light C is greater than the Intensity threshold of Boolean logic, and the logical signal of output is "True";
When without any incident beam, or when only having a branch of incident beam, transmitted light C is less than Intensity threshold, and the logical signal namely exported is "false", the all-optical logic in various situation and operation relation with reference to shown in following table 1,
Table 1 light beam A, logical relation table between light beam B and transmitted light C
2. the bleaching effect based on light absorption according to claim 1 realizes the method for all-optical logic and computing, it is characterized in that: the launching spot of described light beam B should be less than the launching spot of light beam A, and light beam B need through the delay process of 100 ~ 1000fs.
3. the bleaching effect based on light absorption according to claim 1 realizes the method for all-optical logic and computing, it is characterized in that: described light beam A is identical with the wavelength of light beam B, and the Intrinsic Gettering notch that wavelength should be less than semiconductor crystal is long.
4. the bleaching effect based on light absorption according to claim 1 realizes the method for all-optical logic and computing, it is characterized in that: the pulsewidth of described light beam A and light beam B is femtosecond magnitude.
5. the bleaching effect based on light absorption according to claim 1 realizes the method for all-optical logic and computing, it is characterized in that: described semiconductor crystal is direct band-gap semicondictor crystal.
6. the bleaching effect based on light absorption according to claim 1 realizes the method for all-optical logic and computing, it is characterized in that: described working environment should be set to the cryogenic conditions being less than 50K.
7. the bleaching effect based on light absorption according to claim 1 realizes the method for all-optical logic and computing, it is characterized in that: when only there being a branch of incident light, operation result after "AND" logic should be logic "false", namely the light intensity through semiconductor crystal must lower than the Intensity threshold of Boolean logic, semiconductor die body thickness D should be 2 ~ 4 times of optical absorption depth d, and the Boolean logic Intensity threshold of all-optical logical AND gate should be set as 1.2exp (-D/d) times ~ 3exp (-D/d) of single bundle incident light light intensity doubly.
8. the bleaching effect based on light absorption according to claim 1 realizes the method for all-optical logic and computing, it is characterized in that: described semiconductor crystal has satellite energy valley, if the energy level difference of itself and main energy valley is E
k, then the photon energy of incident beam pulse should be greater than semiconductor energy gap E
gbut be less than E
g+ E
k.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4558923A (en) * | 1983-12-22 | 1985-12-17 | The United States Of America As Represented By The Secretary Of The Navy | Picosecond bistable optical switch using two-photon transitions |
| US4900134A (en) * | 1987-01-19 | 1990-02-13 | Hitachi, Ltd. | Optical device |
| US5151589A (en) * | 1989-12-15 | 1992-09-29 | Fujitsu Limited | Optical system using spin-dependent optical nonlinearity |
| CN101416107A (en) * | 2006-02-14 | 2009-04-22 | 科维特克有限公司 | All-optical logic gates using nonlinear elements |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4397567B2 (en) * | 2002-07-05 | 2010-01-13 | 富士通株式会社 | Optical AND gate and waveform shaping device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4558923A (en) * | 1983-12-22 | 1985-12-17 | The United States Of America As Represented By The Secretary Of The Navy | Picosecond bistable optical switch using two-photon transitions |
| US4900134A (en) * | 1987-01-19 | 1990-02-13 | Hitachi, Ltd. | Optical device |
| US5151589A (en) * | 1989-12-15 | 1992-09-29 | Fujitsu Limited | Optical system using spin-dependent optical nonlinearity |
| CN101416107A (en) * | 2006-02-14 | 2009-04-22 | 科维特克有限公司 | All-optical logic gates using nonlinear elements |
Non-Patent Citations (1)
| Title |
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| 飞秒激光诱发直接带隙半导体瞬态漂白效应建模;豆贤安等;《中国激光》;20120630;第39卷(第6期);06020071-6 * |
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