CN103091872B - Microwave and light-wave converter based on lithium niobate long-range surface plasma wave waveguide and microstrip antenna - Google Patents
Microwave and light-wave converter based on lithium niobate long-range surface plasma wave waveguide and microstrip antenna Download PDFInfo
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- CN103091872B CN103091872B CN201210575458.0A CN201210575458A CN103091872B CN 103091872 B CN103091872 B CN 103091872B CN 201210575458 A CN201210575458 A CN 201210575458A CN 103091872 B CN103091872 B CN 103091872B
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Abstract
The invention relates to a microwave and light-wave converter based on lithium niobate long-range surface plasma wave waveguide and microstrip antenna. The microwave and light-wave converter based on the lithium niobate long-range surface plasma wave waveguide and the microstrip antenna is composed of light-wave input polarization maintaining optical fiber, optical signal output polarization maintaining optical fiber, an electrical and optical coupling hub and a broadband micro-strip patch monopole antenna, wherein the electrical and optical coupling hub includes a silicon (Si) substrate; a silicon dioxide (SiO2) layer, aluminum (Al) thin layer, and long-range surface plasma (LRSPP)wave waveguide are bonded on the silicon (Si) substrate, the LRSPP wave waveguide which is formed by gold belts is defined by upper and lower z-cut lithium niobate ( LiNbO3) cladding, a T-shaped gold (Au) electrode is arranged on the top of the lithium niobate (LiNbO3) LRSPP wave waveguide, aluminum (Al) thin layer is grounded, a coupling electrode is formed by the T-shaped gold (Au) electrode and the aluminum (Al) thin layer, and the T-shaped gold (Au) electrode is connected directly with the broadband micro-strip patch monopole antenna. The microwave and light-wave converter based on the lithium niobate long-range surface plasma wave waveguide and the microstrip antenna can achieve light-wave converting of radio frequency/microwave signal with frequency up to 40 GHz when lambda0 is equal to 1550nm operating wavelength. The microwave and light-wave converter based on the lithium niobate long-range surface plasma wave waveguide and the microstrip antenna has the advantages of being wide in frequency band (40GHz), high in efficiency, compact in structure, convenient to integrate and the like.
Description
Technical field
The present invention relates to the microwave light wave converter of light-carried wireless (ROF) system, particularly a kind of microwave light wave converter based on lithium niobate long-range surface plasma wave waveguide and microstrip antenna.
Background technology
Light-carried wireless (ROF) system is very important for the realization of microwave photon communication network.This system needs to utilize photomodulator to realize by Wei Bo ∕ millimeter-wave signal to the conversion of light signal.
Using antenna integrated is a device getting a good chance of realizing wireless signal directly modulation light with electrical-optical (EO) microwave-light wave converter that is coupling electrode
[1].Continue Iezekiel, S.
[1]afterwards, the EO microwave-light wave converter of several use antenna-coupling electrode of bibliographical information is had
[2-3].2011, the Yusuf Nur Wijayantoet al of Osaka, Japan University Engineering science institute, proposed a kind of new microwave-photoconverter, namely realized by embedding narrow gap (as optical waveguide) in paster antenna.It directly can receive Wireless microwave signal that frequency of operation is 18GHz and convert it directly to light signal, has structure that is simple and plane, without the need to providing external power source
[4].Further, in 2012, Yusuf NurWijayanto et al., also been proposed the electrical-optical wireless millimeter wave lightwave signal converter adopting plane Yagi spark gap array antenna coupled resonance electrode
[5].
But above-mentioned research Problems existing is: (1) frequency band is narrower; (2) electrical-optical coupling efficiency is not high enough.
Below the relevant references that inventor retrieves:
[1]Iezekiel，S.:‘Microwave photonics:Devices and applications’（JohnWiley&Sons Ltd，Chichester，UK，2009）。
[2]F.T.Sheehy，W.B.Bridges，and J.H.Shaffner，“60GHz and 94GHzantenna-coupled LiNbO3 electrooptic modulaors，”IEEE Photon.Technol.Lett.，vol.5，no.3，pp.307-310（1993）。
[3]H.Murata，N.Suda，Y.Okamura，“Electro-Optic Microwave-LightwaveConverter Using Antenna-Coupled Electrodes and PolarizationreversedStructures”，Proceedings of the Conference on Laser and Electro-Optic 2008（CLEO2008），CMP1，San Jose USA（2008）。
[4]H.Murata，N.Suda，R.Miyanaka，and Y.Okamura，“Electro-OpticModulators Utilizing Patch-Antenna-Coupled Electrodes andPolarization-Reversed Structures”，Proceedings of the 2010 Asia-PacificMicrowave Photonics Conference（APMP2010），Hongkong（2010）。
[5]Yusuf Nur Wijayanto，et al.，Electro-Optic Microwave-LightwaveConverter Using Patch Antenna Embedded with a Narrow Gap for OpticalModulation，Lasers and Electro-Optics（CLEO），2011Conference on，1-6May2011。
[6]Y.N.Wijayanto，H.Murata，and Y.Okamura，Electro-Optic WirelessMillimeter-Wave-Lightwave Signal Converters Using Planar Yagi-Uda ArrayAntennas Coupled to Resonant Electrodes，2012 17th Opto-Electronics andCommunications Conference（OECC 2012）Technical Digest July 2012，Busan，Korea。
[7]H.Raether，Surface Plasmons on Smooth and Rough Surfaces and onGratings（Springer，Berlin，1988），Vol.111。
[8]W.L.Barnes，J.Opt.A，Pure Appl.Opt.8，S87（2006）。
[9]Y.Tomita，M.Sugimoto，and K.Eda，Appl.Phys.Lett.66，1484（1995）。
[10]S.McMeekin，R.M.De La Rue，and W.Johnstone，J.LightwaveTechnol.10，163（1992）。
[11]M.Levy，R.M.Osgood，Jr.，R.Liu，L.E.Cross，G.S.Cargill III，A.Kumar，and H.Bakhru，Appl.Phys.Lett.73，2293（1998）。
[12]T.A.Ramadan，M.Levy，and R.M.Osgood，Jr.，Appl.Phys.Lett.76，1407（2000）。
[13]P.Rabiei and P.Gunter，Appl.Phys.Lett.85，4603（2004）。
[14]P.Berini，Phys.Rev.B 61，10484（2000）。
[15]P.Berini，Phys.Rev.B 63，125417（2001）。
[16]P.Berini，G.Mattiussi，N.Lahoud，and R.Charbonneau，Appl.Phys.Lett.90，061108（2007）。
[17]G.Gagnon，N.Lahoud，G.Mattiussi，and P.Berini，J.LightwaveTechnol.24，4391（2006）。
[18]S.Park and S.H.Song，Electron.Lett.42，402（2006）。
[19]30P.Berini，G.Mattiussi，N.Lahoud，and R.Charbonneau，Proc.SPIE，6475，6475oU 2007）。
Summary of the invention
The defect existed for described prior art or deficiency, the object of the invention is to, and provides a kind of based on lithium niobate (LiNbO
3) the microwave light wave converter of long-range surface plasma (LRSPP) sonic wave guide (comprising coupling electrode) and microstrip antenna, have that bandwidth (can reach 40GHz), efficiency are high, a compact conformation and be convenient to the features such as integrated.
In order to realize above-mentioned task, the present invention takes following technical solution:
A kind of microwave-light wave converter based on lithium niobate long-range surface plasma wave waveguide and microstrip antenna, it is characterized in that, input polarization maintaining optical fibre by light wave, light signal exports polarization maintaining optical fibre, electrical-optical is coupled hinge and wideband microstrip paster unipole antenna forms, can at λ
0=1550nm operation wavelength realizes microwave-light wave conversion that frequency reaches as high as the less radio-frequency/microwave signal of 40GHz;
Described electrical-optical coupling hinge comprises silicon (Si) substrate, and silicon (Si) substrate is bonded with SiO
2layer, Al thin layer and cut lithium niobate (LiNbO by upper and lower z-
3) covering limit gold bar band composition long-range surface plasma (LRSPP) sonic wave guide, at lithium niobate (LiNbO
3) T-shaped Au electrode is arranged at the top of long-range surface plasma (LRSPP) sonic wave guide, wherein, Al thin layer ground connection, T-shaped Au electrode and Al thin layer form coupling electrode, and T-shaped Au electrode is directly connected with broadband microstrip patch antenna.
The structure of described wideband microstrip paster unipole antenna comprises the substrate (DIELECTRIC CONSTANT ε of substrate
r=3.38), substrate glazing is carved with gold (Au) disk paster and is attached thereto two gold (Au) microstrip lines connect.
Microwave-light wave converter based on lithium niobate long-range surface plasma wave waveguide and microstrip antenna of the present invention, has that bandwidth (40GHz), efficiency are high, a compact conformation and be convenient to the features such as integrated.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present invention; In Fig. 1, I, III is polarization maintaining optical fibre; II is electrical-optical coupling hinge.
Fig. 2 is the microwave-light wave converter structure schematic diagram (top shows) based on lithium niobate long-distance surface ripple plasma sonic wave guide and microstrip antenna of the present invention.
Fig. 3 a is LiNbO on Si substrate
3the cross-sectional view of base LRSPP sonic wave guide (i.e. electrical-optical coupling hinge, as shown in B in Fig. 2), Fig. 3 b represents the view of c-c section in Fig. 2;
Fig. 4 is the general structure figure of electrical-optical coupling hinge;
Fig. 5 is that electrical-optical coupling hinge is taked instead to claim structural drawing;
Fig. 6 is electrical-optical coupling hinge preparation flow figure;
Fig. 7 is that two kinds of methods embed Au electrode flow process, and wherein, Fig. 7 a based on the groove using identical photoresistance pattern to etch at lithium columbate crystal, and removes unnecessary gold; Fig. 7 b is depicted as and takes chemical polishing (CMP).
Fig. 8 is the reflection loss-frequency characteristic figure based on microstrip antenna in the microwave-light wave converter of lithium niobate long-range surface plasma wave waveguide and microstrip antenna of the present invention.
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Embodiment
It should be noted that, below in an example, the list of references that applicant provides will be employed.
See Fig. 2, the present embodiment provides a kind of based on lithium niobate (LiNbO
3) long-range surface plasma (LRSPP) sonic wave guide
[6-19]with the microwave-light wave converter of microstrip antenna, input polarization maintaining optical fibre A by light wave, light signal exports polarization maintaining optical fibre C, electrical-optical is coupled, and hinge B and wideband microstrip disk paster unipole antenna D forms, electrical-optical coupling hinge B comprises silicon (Si) substrate, and silicon (Si) substrate is bonded with SiO
2layer, Al thin layer and cut lithium niobate (LiNbO by upper and lower z-
3) covering limit gold bar band composition long-range surface plasma (LRSPP) sonic wave guide, at lithium niobate (LiNbO
3) T-shaped Au electrode is arranged at long-range surface plasma (LRSPP) sonic wave guide top.Coupling electrode is made up of the Al thin layer of above-mentioned T-shaped Au electrode and ground connection.Light wave excitation is realized by the mode adopting polarized wave to keep fiber alignment to be coupled to long-range surface plasma (LRSPP) sonic wave guide input end.
One, principle
Microwave-light wave converter based on lithium niobate long-range surface plasma wave waveguide and microstrip antenna of the present invention, its schematic diagram is see in Fig. 1, figure, and I, III is polarization maintaining optical fibre; II is electrical-optical coupling hinge, and light wave inputs from polarization maintaining optical fibre, and less radio-frequency/microwave inputs from electrical-optical coupling hinge II, and the light signal that electrical-optical coupling hinge II exports exports through polarization maintaining optical fibre III.
Fig. 3 a represents LiNbO on the Si substrate in Fig. 2 shown in B
3the cross-sectional view of long-range surface plasma (LRSPP) sonic wave guide (i.e. electrical-optical coupling hinge).Fig. 3 b represents the view of c-c section in Fig. 2.
Two, principle of work and technique
1. principle of work
Surface plasma wave (SPPs) is cross-polarization magnetic field surface wave, propagates, have again the high density free carrier fettered by medium along dielectric surface
[7,8].Lithium niobate (LiNbO
3) there is non-linear, electrical-optical harmony-light characteristic significantly.The method making coupling crystallization covering is Direct Bonding and thinning, and Direct Bonding can be implemented at low temperatures; Direct Bonding does not relate to adhesives, the material of bonding not need Lattice Matching.
Direct Bonding needs: (1) is less than the flatness of 5nm deviation; (2) by the surface active of suitable clean and process; A good Direct Bonding causes nothing to have the seamless material interface of gross imperfection.
Various material all by Direct Bonding, can comprise lithium niobate (LiNbO
3) with self and with other material.Further, lithium niobate (LiNbO
3) can polishing, to obtain thinner layer
[9,10]; Or separate thin layer with crystal ionic cutting from master wafer
[11,12].Crystal ionic cuts and also directly can engage with Direct Bonding, and another substrate produces lithium niobate (LiNbO
3) thin layer
[13].By this way
[9-13]thin lithium niobate (the LiNbO obtained
3) crystal layer, remain its bulk property.
In the present embodiment, the structure of electrical-optical coupling hinge as shown in Figure 4.Comprise silicon (Si) substrate, silicon (Si) substrate is bonded with SiO
2layer, ground connection aluminium (Al) thin layer and cut lithium niobate (LiNbO by upper and lower z-
3) long-range surface plasma (LRSPP) sonic wave guide of gold bar band composition that covering limits, and be positioned at top lithium niobate (LiNbO
3) T-shaped Au electrode on covering.Once impressed voltage is granted between the Au electrode of the top and Al ground-electrode, due to electrooptical effect, cause at LiNbO
3occur in crystal along gold bar band propagate
the modulation of guide-lighting mode.This is because, ducting
the main transverse electric field component orientation of mould is perpendicular to metal band
[14], namely along the z-axis of covering, by applying additional vertical electric field E(as shown in Figure 4), just can utilize lithium niobate (LiNbO
3) the most forceful electric power backscatter extinction logarithmic ratio of crystal.
main and the n of mould
e(i.e. LiNbO
3extraordinary refractive index) interact, n
emodulated by extra electric field E, according to
for LiNbO
3at λ
0=1550nm, n
e=2.1377 and r
33=29.9pm/V.
Top and bottom z-cuts LiNbO
3covering, both orientations can identical also can be contrary, as shown in Figure 4.If take top and the bottom LiNbO of oppositely alignment
3covering (as shown in Figure 5), the external electric field E applied makes the refractive index of a covering increase to Δ n, and makes the refractive index of another covering reduce identical amount, like this, has occurred that the refractive index comprising 2 Δ n is asymmetric in waveguiding structure.This instead claims crosscut
mould
[15], force it to be radiated the covering of high index of refraction
[16], as heat-photo structure
[17,18]so, cause broadband intensity modulated.The top of aliging in the same way if take and bottom LiNbO
3covering, then the increase that applied external electric field E makes the refractive index of two coverings equal or reduce Δ n, so give
mould phase-modulation.Based on optical analogy
[19], the thickness t=20nm – 22nm of the gold bar band imbedded; Width w=0.95 μ m – 2 μm; Waveguide is made to have rational low-loss (a few dB/mm) and accessible mould size like this.Finally, the thickness of required lithium niobate covering is 10 μ m – 15 μm.
Utilize this waveguiding structure, it is integrated that following likely optimized integration electron device and photoelectric device are justified on crystalline substance at same Si.
2, main technological steps flow process
As shown in Figure 6, successfully carry out justifying brilliant bonding to make lithium columbate crystal covering, gold bar band (Au) must be embedded into the surface of lithium niobate crystal chip and be flattened, to such an extent as to the surface obtained has enough smooth (deviation is less than about 5nm).After enforcement series of process flow process, at first LiNbO
3the smooth gold bar band of the brilliant upper implantation of circle, and be finally formed as upper clad layer.Once gold bar band is embedded into, this LiNbO
3wafer is reversed and Direct Bonding to the second LiNbO
3circular wafer, will be formed as lower clad like this.2nd LiNbO
3wafer need through grinding and polishing to reach the thickness d of applicable lower clad needs, then aluminium (Al) is deposited to the basal surface of this circular wafer to form ground connection aluminium (Al) electrode, this ground connection aluminium (Al) electrode again with SiO
2thin layer connects.The LiNbO of such formation
3storehouse is the SiO of Direct Bonding extremely on si circle crystalline substance again
2on thin layer.
Then, first LiNbO
3circular wafer is through the thickness d of grinding and be polished to needed for upper clad layer.Finally, optical waveguide top Au electrode takes photoetching process to realize by depositing 1 μm of thick Au, and the width of top Au electrode is 10 μm.The final long l=4mm of optical waveguide formed thus; Wide W
b=7mm(is see Fig. 2).
LiNbO
3with Si, there is different thermal expansivity, but all processing step is implemented all at low temperatures.At the initial stage of this technological process, top LiNbO
3layer is to bottom LiNbO
3layer Direct Bonding step is at room temperature carried out, and at 300 DEG C, implements annealing subsequently.All treatment steps subsequently all carry out at lower than the temperature of 150 DEG C.LiNbO
3/ Al/SiO
2storehouse is to SiO
2the direct combination of/Si is also at room temperature carried out, afterwards annealing in process under an experience low temperature.
At top and bottom LiNbO
3direct Bonding interface between covering should be seamless and do not have gross imperfection.
3, the flow process of gold bar band is embedded:
Fig. 7 shows two kinds of methods and embeds Au bands, and wherein, Fig. 7 a is based on the groove using identical photoresistance pattern etch at lithium columbate crystal and the unnecessary gold of removal.Fig. 7 b is depicted as and adopts chemical polishing (CMP).Because the chemical corrosion of lithium niobate is difficult, to such an extent as to the groove of ion beam grinding for etching, the Au entered wherein deposits subsequently.Because required institute easily realizes in steps, therefore in the present embodiment, adopt the method for Fig. 7 a.The width of Au band is 2 μm, thick 20nm.This Au band is embedded in above-mentioned long l=4mm, wide W
bthe center line of=7mm optical waveguide, and the width of top Au electrode is 10 μm.
4, antenna parameter and making:
The structure of wideband microstrip disk paster unipole antenna, as shown in D in Fig. 2, comprises substrate, gold (Au) disk paster (Au) that on substrate, favourable photoetching process realizes and be attached thereto two gold (Au) microstrip lines connect.
Design parameter is as follows:
The width W of substrate: 30mm
The length L:35mm of substrate
The width W of feeder line
f: 1.8mm
The length L of feeder line
f: 5mm
The width W of first paragraph microstrip line
1: 1.4mm
The length L of first paragraph microstrip line
1: 5mm
The width W of second segment microstrip line
2: 1mm
The length L of second segment microstrip line
2: 3mm
The radius R of gold (Au) disk paster: 7.5mm
DIELECTRIC CONSTANT ε
r: 3.38
The thickness H of substrate
sub: 0.83mm
Wideband microstrip disk paster unipole antenna adopts photoetching process to make.
Based on the microwave-light wave converter of lithium niobate long-distance surface ripple plasma sonic wave guide and microstrip antenna, the reflection loss-frequency characteristic of its receiving antenna (i.e. wideband microstrip disk paster unipole antenna) as shown in Figure 8.
Claims (2)
1. the microwave light wave converter based on lithium niobate long-range surface plasma wave waveguide and microstrip antenna, it is characterized in that, input polarization maintaining optical fibre by light wave, light signal exports polarization maintaining optical fibre, electrical-optical is coupled hinge and wideband microstrip paster unipole antenna forms, can at λ
0=1550nm operation wavelength realizes microwave-light wave conversion that frequency reaches as high as the less radio-frequency/microwave signal of 40GHz;
Described electrical-optical coupling hinge comprises silicon (Si) substrate, and silicon (Si) substrate is bonded with SiO
2layer, aluminium (Al) thin layer and cut lithium niobate (LiNbO by upper and lower z-
3) covering limit gold bar band composition long-range surface plasma (LRSPP) sonic wave guide, at lithium niobate (LiNbO
3) T-shaped gold (Au) electrode is arranged at the top of long-range surface plasma (LRSPP) sonic wave guide, wherein, Al electrode ground connection, T-shaped Au electrode and Al electrode form coupling electrode, and T-shaped Au electrode is directly connected with wideband microstrip paster unipole antenna.
2., as claimed in claim 1 based on the microwave light wave converter of lithium niobate long-distance surface ripple plasma sonic wave guide and microstrip antenna, it is characterized in that, the structure of described wideband microstrip paster unipole antenna comprises substrate, the DIELECTRIC CONSTANT ε of substrate
rbe 3.38, substrate glazing is carved with gold (Au) disk paster and is attached thereto and connects two gold (Au) microstrip lines.
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| CN103346372B (en) * | 2013-06-04 | 2016-03-16 | 东南大学 | A kind of device mutually changed for micro-band and surface plasmons |
| CN103346144B (en) * | 2013-07-05 | 2015-12-02 | 南开大学 | For groined type artificial magnetic conductor and the implementation method of 60 GHz on-chip antennas |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0575491A (en) * | 1991-09-17 | 1993-03-26 | Funai Denki Kenkyusho:Kk | Converter for receiving microwave and assembly mehtod of antenna system employing the same |
| CN101581814A (en) * | 2009-04-07 | 2009-11-18 | 清华大学 | Long-range surface plasma wave and medium guided wave coupling structure and application thereof |
| WO2011040328A1 (en) * | 2009-09-29 | 2011-04-07 | 東京エレクトロン株式会社 | Antenna for generating surface wave plasma, microwave introducing mechanism, and apparatus for processing surface wave plasma |
| CN202121062U (en) * | 2011-04-26 | 2012-01-18 | 肖丙刚 | Compact single pole ultra-wideband antenna base on radiation paster |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7583882B2 (en) * | 2006-11-10 | 2009-09-01 | University Of Alabama In Huntsville | Waveguides for ultra-long range surface plasmon-polariton propagation |
| US7920766B2 (en) * | 2009-02-10 | 2011-04-05 | Alcatel-Lucent Usa Inc. | Surface-plasmon-assisted optical frequency conversion |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0575491A (en) * | 1991-09-17 | 1993-03-26 | Funai Denki Kenkyusho:Kk | Converter for receiving microwave and assembly mehtod of antenna system employing the same |
| CN101581814A (en) * | 2009-04-07 | 2009-11-18 | 清华大学 | Long-range surface plasma wave and medium guided wave coupling structure and application thereof |
| WO2011040328A1 (en) * | 2009-09-29 | 2011-04-07 | 東京エレクトロン株式会社 | Antenna for generating surface wave plasma, microwave introducing mechanism, and apparatus for processing surface wave plasma |
| CN202121062U (en) * | 2011-04-26 | 2012-01-18 | 肖丙刚 | Compact single pole ultra-wideband antenna base on radiation paster |
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