CN103091744A - Novel multilayer film capable of improving extreme ultraviolet spectrum purity and thermal stability - Google Patents
Novel multilayer film capable of improving extreme ultraviolet spectrum purity and thermal stability Download PDFInfo
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- CN103091744A CN103091744A CN2013100372654A CN201310037265A CN103091744A CN 103091744 A CN103091744 A CN 103091744A CN 2013100372654 A CN2013100372654 A CN 2013100372654A CN 201310037265 A CN201310037265 A CN 201310037265A CN 103091744 A CN103091744 A CN 103091744A
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Abstract
The invention discloses a novel multilayer film capable of improving extreme ultraviolet spectrum purity and thermal stability and belongs to the filed of extreme ultraviolet lithography. The novel multilayer film is a periodic multilayer film, and substrate of the periodic multilayer film is plated with a silicon (Si) layer and a molybdenum (Mo) layer in sequence, wherein the Si layer and the Mo layer are alternant. The novel multilayer film further comprises a thermal stability layer which is manufactured on the periodic multilayer film, wherein the Si layer and the Mo layer are alternant on the periodic multilayer film. The novel multilayer film capable of improving the extreme ultraviolet spectrum purity and the thermal stability can guarantee that reflectivity losses of extreme ultraviolet wavebands can be ignored and restrains reflectivity of wavebands out of band effectively on the condition that appearances of films are not changed, optical elements are not increased, radial directions of light are not changed and processing steps are not added in addition through the periodic multilayer film with an alternant Si layer and a Mo layer being plated with a silicon nitride (Si3N4) thermal stability layer.
Description
Technical field
The invention belongs to the extreme ultraviolet photolithographic field, be specifically related to a kind of raising extreme ultraviolet spectral purity, have simultaneously the novel multi-layer film of good thermal stability.
Background technology
In the evolution of integrated circuit, except the integrated circuit (IC) design technology, its manufacturing technology is being brought into play more and more important effect, and what play decisive role in the development of integrated circuit is Micrometer-Nanometer Processing Technology.Photoetching technique is core and the key of integrated circuit manufacturing technology, the high integration that reduces to realize integrated circuit, high-performance and the low-loss of semiconductor devices live width.The resolution of etching system is determined by operation wavelength and numerical aperture, for improving the resolution of etching system, just must make operation wavelength to the extreme ultraviolet future development.
Along with the progress of film preparing technology, the multiplayer films in EUV technology has obtained development rapidly.At present, the multilayer film optical element has produced in the fields such as the fluorescence analysis of frequency-selecting, low atomic number material of higher hamonic wave and arrowband polarimetry at uranology, extreme ultraviolet photolithographic, micrology, material science, soft x-ray laser, synchrotron radiation application, plasma diagnostics, astrophysics, femtosecond laser and has been widely used.
Extreme ultraviolet photolithographic be generally utilize the extreme ultraviolet of the 13.5nm wavelength that sends from laser plasma light source through collimation, disappearing shines on mask plate after polluting, through optical projection system projection micro, method transferring on the gluing silicon chip the figure high resolution on mask plate with step-scan, through over etching, the processes such as cleaning are produced the silicon wafer with mask graph again.
In the ideal case, for stablizing the resolution of extreme ultraviolet etching system, the light that arrives exposure system should have single wavelength.But because the current light source that can be used as extreme ultraviolet photolithographic is broadband spectral, the sensitive range of photoresist is relatively wider and the luminance factor outer wave band (160nm-240nm) of multilayer film band is higher, causes photoresist also can expose by wave band outside band.Arrive the wider resolution that can reduce etching system of spectral width of exposure system in extreme ultraviolet photolithographic.
Simultaneously, the thermal stability of multiplayer films in EUV is also one of gordian technique of extreme ultraviolet photolithographic development, and in the extreme ultraviolet etching system, the surface oxidation of multiplayer films in EUV and surface carbon are polluted and will be caused reflectivity to reduce and the life-span minimizing.Surface carbon is polluted and can be removed by modes such as ozone clean, and surface oxidation problem relatively is difficult to resolve certainly.
At present, the multilayer film that preferably is coated with of extreme ultraviolet waveband is that periodicity is 40, periodic thickness is Mo, the Si multilayer film of 7nm.This multilayer film can reach 70% at the reflectivity at 13.5nm place, but its band outer wave band reflectivity very high (reaching as high as 60%); The outermost layer of multilayer film is Si, very easily forms SiO2 when contacting with air.Theoretical calculating show, when the carbon contaminated layer of Mo/Si multi-layer film surface or oxide on surface thickness reached 1.5nm, x-ray reflectivity sharply descended.
Summary of the invention
In order to solve problems of the prior art, the invention provides a kind of novel multi-layer film that improves extreme ultraviolet spectral purity and thermal stability, this multilayer film is guaranteeing under the insignificant prerequisite of 13.5nm place's reflectivity loss, the reflectivity of the outer wave band of band is effectively suppressed, can effectively improves the thermal stability of multiplayer films in EUV simultaneously.
The technical scheme that technical solution problem of the present invention adopts is as follows:
A kind of novel multi-layer film that improves extreme ultraviolet spectral purity and thermal stability, the periodicity multilayer film that this novel multi-layer film replaces for be coated with successively Si layer and Mo layer in substrate, also comprise thermostable layer, described thermostable layer is produced on the periodicity multilayer film that Si layer and Mo layer replace.
The invention has the beneficial effects as follows: the present invention is by being coated with Si on the periodicity multilayer film that replaces at Si layer and Mo layer
3N
4Thermostable layer can not change the profile of film system, not increase optical element, not change the radiation direction of light, also not increase under the prerequisite of extra procedure of processing, the reflectivity loss that had not only guaranteed extreme ultraviolet waveband can ignore but also make the reflectivity of the outer wave band of band to be effectively suppressed, and the thermal stability of multilayer film is improved.
Description of drawings
A kind of novel multi-layer membrane structure schematic diagram that improves extreme ultraviolet spectral purity and thermal stability of Fig. 1 the present invention.
Fig. 2 wavelength of the present invention is at the 13.5nm Si of place
3N
4Thickness is 8nm-12nm, Si
3N
4The schematic diagram of thickness and reflectivity Relations Among.
Fig. 3 wavelength of the present invention is at the 13.5nm Si of place
3N
4Thickness is 8nm-12nm, Si
3N
4Thickness and the schematic diagram of being with outer wave band reflectivity Relations Among.
Fig. 4 wavelength of the present invention is novel multi-layer film and Mo/Si multilayer film in 12.5nm-14.5nm, the schematic diagram of wavelength and reflectivity Relations Among.
Fig. 5 wavelength of the present invention is novel multi-layer film and Mo/Si multilayer film in 160nm-240nm, the schematic diagram of wavelength and reflectivity Relations Among.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further details.
As shown in Figure 1, a kind of novel multi-layer film that improves extreme ultraviolet spectral purity and thermal stability, the periodicity multilayer film that this novel multi-layer film replaces for be coated with successively Si layer 2 and Mo layer 3 in substrate 1, also comprise thermostable layer 4, described thermostable layer 4 is produced on the periodicity multilayer film that Si layer 2 and Mo layer 3 replace.
The preferred layer cycle of the periodicity multilayer film that Si layer 2 and Mo layer 3 replace is 40-60, corresponding Si layer of layer and the adjacent Mo layer of this Si layer, and wherein periodically the thickness of the inner Si layer of multilayer film and Mo layer is constant at this.Limited depth of interaction due to the radiation in this SPECTRAL REGION, affiliated layer only has slight effect to the reflection of this multilayer film to the further raising of quantity, can realize that by this periodic multilayer film the height in the narrow SPECTRAL REGION of a given wavelength X reflects.
In the present invention, preferably on the periodicity multilayer film that Si layer 2 and Mo layer 3 replace, a thermostable layer 4 is set, periodically the layer of multilayer film is different in order to lose under little prerequisite at the reflectivity that guarantees 13.5nm place from this on material and thickness for thermostable layer 4, the reflectivity of the outer wave band of band is effectively suppressed, the thermal stability of multilayer film is improved.
The material of thermostable layer 4 is mainly Si
3N
4, because this material is very high at the absorption coefficient of extreme ultraviolet waveband, so the thickness of thermostable layer 4 is generally 8nm-12nm.
Multilayer film according to the present invention is particularly suitable for being applied in in spectral purity and the exigent extreme ultraviolet etching system of Thermal Stability of Multilayer.Under the laser plasma light source radiation, be coated with the multilayer film reflection of thermostable layer 4 by the present invention after, the minimum reflectivity of the outer wave band of band can reach below 3%; The multi-layer film surface degree of oxidation is lower simultaneously, and its thermo oxidative stability is better; And because thermostable layer is thinner, its absorption to the 13.5nm place is relatively less.
The inhibition of the outer wave band reflectivity of the band of this novel multi-layer film can realize in the following manner: this novel multi-layer film is arranged in substrate 1, and the surfaceness of substrate 1 is less than 0.2nm.Be coated with periodicity multilayer film and thermostable layer 4 that Si layer 2 and Mo layer 3 replace in substrate 1, then with albedometer, its reflectivity characterized.
In the periodicity multilayer film that Si layer 2 and Mo layer 3 replace, corresponding Si layer 2 and corresponding Mo layer 3 consist of one-period.8 cycles only are shown in Fig. 1, and optimal period quantity is 40.The preferred thickness of thermostable layer 4 is the 10nm left and right, the existence of thermostable layer 4 can make the novel multi-layer film under the little prerequisite of 13.5nm place's reflectivity minimizing, to the outer wave band of its band, especially 160nm-240nm, reflectivity has an effective inhibiting effect, and the thermal stability of multiplayer films in EUV is improved.The novel multi-layer film is put on preferred magnetron sputtering in substrate 2, and what wherein Si layer 2 and Mo layer 3 were selected is magnetically controlled DC sputtering, the preferred rf magnetron sputtering of thermostable layer 4, and the working gas that uses is argon gas.
Fig. 2 represents that wavelength is at the 13.5nm Si of place
3N
4Thickness is 8nm-12nm, Si
3N
4The schematic diagram of thickness and reflectivity Relations Among.In example of the present invention, be provided with respectively different thermostable layer 4 thickness on the periodicity multilayer film that be 40 at periodicity, periodic thickness is about the Si layer 2 of 7nm and Mo layer 3 replaces, its scope is 8nm-12nm.
As shown in Figures 2 and 3, along with Si
3N
4The increase gradually of film thickness, multiplayer films in EUV reduces gradually at the reflectivity at 13.5nm place, but the inhibition degree of the outer wave band of its band strengthens gradually.So, need to get in the inhibition degree of the reflectivity at 13.5nm place and the outer wave band of band an equilibrium value make be with outside wave band maximum inhibition degree be in the different wave length place and adapt to different photoresists.
Fig. 4 represents the periodicity multilayer film (Mo/Si multilayer film) that wavelength novel multi-layer film and Si layer 2 and Mo layer 3 in 12.5nm-14.5nm replace, the schematic diagram of wavelength and reflectivity Relations Among.In example of the present invention, be provided with thermostable layer 4 on the periodicity multilayer film that be 40 at periodicity, periodic thickness is about the Si layer 2 of 7nm and Mo layer 3 replaces, the material of thermostable layer 4 and thickness thereof are the Si of 10nm
3N
4Layer.As shown in Figure 4, the periodicity multilayer film that Si layer 2 and Mo layer 3 replace is about 73% at the reflectivity at 13.5nm place, and after adding thermostable layer 4, due to the absorption of thermostable layer 4, reflectivity can decrease: thermostable layer 4 is the Si of 10nm
3N
4The time reflectivity be about 62%.Learnt by Fig. 4, be coated with the novel multi-layer film of thermostable layer 4 on the periodicity multilayer film that Si layer 2 and Mo layer 3 replace, do not have because being coated with thermostable layer 4 plays very large impact to reflectivity, the loss of reflectivity is within the acceptable scope.
The periodicity multilayer film that Fig. 5 wavelength novel multi-layer film and Si layer 2, Mo layer 3 in 160nm-240nm replace, the schematic diagram of wavelength and reflectivity Relations Among.The reflectivity of the periodicity multilayer film that Si layer 2, Mo layer 3 replace can reach 60% at the reflectivity of deep ultraviolet wave band.In novel multi-layer film of the present invention, the deep ultraviolet reflectivity all is no more than 30%, and the maximum inhibition degree of thermostable layer 4 its deep ultraviolet wave bands of different-thickness and inhibition zone are different.An example of the present invention is that thermostable layer 4 is the Si of 10nm
3N
4The time, the reflectivity at the 194nm place is only 3%.Above-mentioned example can effectively suppress for the exposure of extreme ultraviolet photolithographic glue wave band outside band, and makes multilayer film have good thermal stability.
Claims (5)
1. novel multi-layer film that improves extreme ultraviolet spectral purity and thermal stability, the periodicity multilayer film that this multilayer film replaces for be coated with successively Si layer (2) and Mo layer (3) in substrate (1) is characterized in that, also comprises thermostable layer (4); Described thermostable layer (4) is produced on the periodicity multilayer film that Si layer (2) and Mo layer (3) replace.
2. a kind of novel multi-layer film that improves extreme ultraviolet spectral purity and thermal stability according to claim 1, is characterized in that, the surfaceness of described substrate (1) is less than 0.2nm.
3. a kind of novel multi-layer film that improves extreme ultraviolet spectral purity and thermal stability according to claim 1, is characterized in that, the periodicity multilayer film periodicity that described Si layer (2) and Mo layer (3) replace is 40 ~ 60, and periodic thickness is 6.9 ~ 7.1nm.
4. a kind of novel multi-layer film that improves extreme ultraviolet spectral purity and thermal stability according to claim 1, is characterized in that, the thickness of described thermostable layer (4) is 9-11nm.
5. a kind of novel multi-layer film that improves extreme ultraviolet spectral purity and thermal stability according to claim 1, is characterized in that, the material of described thermostable layer (4) is Si
3N
4
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Cited By (6)
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| CN103323430A (en) * | 2013-05-31 | 2013-09-25 | 中国科学院长春光学精密机械与物理研究所 | Rotation mechanism for measuring reflectivity of soft X-ray-extreme ultraviolet multilayer-film elements |
| CN105445819A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing extreme ultraviolet waveband broadband Mo/Si multi-layer film |
| WO2016168954A1 (en) * | 2015-04-21 | 2016-10-27 | 中国科学院长春光学精密机械与物理研究所 | Multilayer film with extreme ultraviolet spectrum purity and thermal stability |
| CN111381307A (en) * | 2020-05-12 | 2020-07-07 | 苏州江泓电子科技有限公司 | Polarizing multilayer film for vacuum ultraviolet band of 70-100 nm and preparation method thereof |
| CN111399106A (en) * | 2020-05-12 | 2020-07-10 | 苏州江泓电子科技有限公司 | Polarizing multilayer film for vacuum ultraviolet band of 50-70 nm and preparation method thereof |
| CN111443418A (en) * | 2020-05-12 | 2020-07-24 | 苏州江泓电子科技有限公司 | Polarizing multilayer film for vacuum ultraviolet band of 70-100 nm and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103323430A (en) * | 2013-05-31 | 2013-09-25 | 中国科学院长春光学精密机械与物理研究所 | Rotation mechanism for measuring reflectivity of soft X-ray-extreme ultraviolet multilayer-film elements |
| WO2016168954A1 (en) * | 2015-04-21 | 2016-10-27 | 中国科学院长春光学精密机械与物理研究所 | Multilayer film with extreme ultraviolet spectrum purity and thermal stability |
| CN105445819A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Method for preparing extreme ultraviolet waveband broadband Mo/Si multi-layer film |
| CN105445819B (en) * | 2015-12-21 | 2017-06-23 | 中国科学院长春光学精密机械与物理研究所 | A kind of preparation method of extreme ultraviolet waveband broadband Mo/Si multilayer films |
| CN111381307A (en) * | 2020-05-12 | 2020-07-07 | 苏州江泓电子科技有限公司 | Polarizing multilayer film for vacuum ultraviolet band of 70-100 nm and preparation method thereof |
| CN111399106A (en) * | 2020-05-12 | 2020-07-10 | 苏州江泓电子科技有限公司 | Polarizing multilayer film for vacuum ultraviolet band of 50-70 nm and preparation method thereof |
| CN111443418A (en) * | 2020-05-12 | 2020-07-24 | 苏州江泓电子科技有限公司 | Polarizing multilayer film for vacuum ultraviolet band of 70-100 nm and preparation method thereof |
| CN111381307B (en) * | 2020-05-12 | 2022-02-22 | 苏州江泓电子科技有限公司 | Polarizing multilayer film for vacuum ultraviolet band of 70-100 nm and preparation method thereof |
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Application publication date: 20130508 |