CN103073305A - Sintering additive composition and dielectric ceramic composition, and applications thereof - Google Patents

Sintering additive composition and dielectric ceramic composition, and applications thereof Download PDF

Info

Publication number
CN103073305A
CN103073305A CN2011103303943A CN201110330394A CN103073305A CN 103073305 A CN103073305 A CN 103073305A CN 2011103303943 A CN2011103303943 A CN 2011103303943A CN 201110330394 A CN201110330394 A CN 201110330394A CN 103073305 A CN103073305 A CN 103073305A
Authority
CN
China
Prior art keywords
composition
dielectric ceramic
sintering
moles
mole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011103303943A
Other languages
Chinese (zh)
Other versions
CN103073305B (en
Inventor
蔡聪智
萧富昌
柯汉洲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongguan Huake Electronic Co Ltd
Original Assignee
Dongguan Huake Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongguan Huake Electronic Co Ltd filed Critical Dongguan Huake Electronic Co Ltd
Priority to CN201110330394.3A priority Critical patent/CN103073305B/en
Publication of CN103073305A publication Critical patent/CN103073305A/en
Application granted granted Critical
Publication of CN103073305B publication Critical patent/CN103073305B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention relates to a sintering additive composition comprising silica, boron trioxide, and at least two modification components selected from the group comprising tungsten trioxide, molybdenum trioxide and tin dioxide. Calculated according to a total amount of the sintering additive composition as 100mol, the content of silica is 60-85mol, the content of boron trioxide is 10-35mol, and the content of the at least two modification components is 0.1-5mol. Also, the invention relates to a dielectric ceramic composition comprising the sintering additive composition. The invention also relates to a laminated ceramic capacitor comprising the dielectric ceramic composition. The composition has an excellent low-temperature sintering property, such that the reliability of the capacitor can be improved.

Description

Sintering adds composition, dielectric ceramic composition, reaches their application
Technical field
The invention relates to the monolithic ceramic capacitor that a kind of sintering adds composition, dielectric ceramic composition and comprises said composition.
Background technology
Flourish along with electronic industry in recent years, monolithic ceramic capacitor rapidly toward laminated ceramic miniaturization, thin layer, with the future development of high capacity.In monolithic ceramic capacitor, be stacked inner electrode layer in dielectric ceramic composition, and make it make the mutual stacking ceramic sintered bodies of dielectric layer and inner electrode layer through sintering step.
Yet in the development of monolithic ceramic capacitor thin layer, inner electrode layer can reduce because high temperature sintering shrinks the size of active electrode, makes the reliability decrease of monolithic ceramic capacitor.Therefore, for the continuity that promotes inner electrode layer and the distribution scenario of microtexture, how developing a kind of dielectric ceramic composition that possesses excellent low-temperature sintering characteristic just becomes a very important problem.
In TaiWan, China patent announcement I326092 number, a kind of dielectric ceramic composition is proposed, said composition is take silicon-dioxide as main glass ingredient, with magnesium oxide, calcium oxide, strontium oxide or barium oxide as the first glass composition, and add the sintering aid that contains boron trioxide, aluminium sesquioxide, zinc oxide, reaches silicon-dioxide, to promote the low-temperature sintering characteristic of composition.
In addition, in TaiWan, China patent announcement I299727 number, then propose a kind of with (Ba, Ca) TiO 3Be the dielectric ceramic material of main component, the sintering aid that other adds the oxide compound of magnesium, manganese, rare earth metal and contains the silicon composition is to manage the future development of dielectric layer toward thin layer.
In addition, in TaiWan, China patent announcement I299328 number, then take barium titanate as main component, add the rare earth element of two kinds of different effective ionic radius, to form dielectric ceramic composition, make it have the accelerated aging of good reducing resistance, temperature characteristics of capacitance and insulation resistance.
The present invention is different from the dielectric ceramic composition of above-mentioned lifting low-temperature sintering characteristic, take barium titanate as main component, and comprise the upgrading composition of specific quantity, and make it possess good low-temperature sintering characteristic, use the insulation impedance, physical strength and the reliability that promote monolithic ceramic capacitor.
Summary of the invention
Main purpose of the present invention is the monolithic ceramic capacitor that is to provide a kind of sintering interpolation composition (composition), dielectric ceramic composition and comprises said composition, described sintering adds the low-temperature sintering characteristic that composition can effectively promote dielectric ceramic composition, in order to do the reliability of crystal boundary opposing, physical strength and the electrical condenser thereof that can promote monolithic ceramic capacitor, and then reach the purpose that makes laminated ceramic miniaturization, thin layerization and high capacity.
For reaching above-mentioned purpose, the invention provides a kind of sintering and add composition, comprising: silicon-dioxide (SiO 2); Boron trioxide (B 2O 3); And at least two upgrading compositions, described upgrading composition is selected from the following group that forms: tungstic oxide (WO 3), molybdic oxide (MoO 3) and tindioxide (SnO 2); Wherein add total composition as 100 moles take sintering, the content of silicon-dioxide is between 60 moles and 85 moles, and the content of boron trioxide is between 10 moles and 35 moles, and the content of this at least two upgradings composition is between 0.1 mole and 5 moles.
Add in the composition in sintering of the present invention, this sintering adds composition and is preferably formation SiO 2-B 2O 3-SnO 2-WO 3-MoO 3Composition.Wherein, silicon-dioxide and boron trioxide are all the main oxides that forms glass, determine that sintering adds fusing point, flowability and other additive (as: barium titanate) of composition and the solubleness of said composition.
The total amount of adding composition take sintering is as 100 moles, when the content of silicon-dioxide is lower than 60 moles, and with so that sintering adds composition that the solubleness of barium titanate in the dielectric ceramic composition is descended, and then the low-temperature sintering characteristic of deteriorated dielectric ceramic composition; Otherwise, when the content of silicon-dioxide is higher than 85 moles, can reduce the temperature flowing that sintering adds composition, cause the heterogeneous growth of material grains in the dielectric ceramic composition.Therefore, the total amount of adding composition take sintering is as 100 moles, and the content that is preferably silicon-dioxide is controlled between 60 moles and 85 moles.
Compared to silicon-dioxide, boron trioxide will reduce the fusing point of sintering interpolation composition more significantly.Add the high low-temperature fluidity of composition in order to improve sintering, the total amount of adding composition take sintering is as 100 moles, and the content of boron trioxide is better should to be higher than 10 moles.In addition, when the content of boron trioxide is higher than 35 moles, the crystallinity increase of sintered composition will reduce the low-temperature sintering characteristic of dielectric ceramic composition.Therefore, the total amount of adding composition take sintering is as 100 moles, and the content that is preferably boron trioxide is controlled between 10 moles and 35 moles.
Add in the composition in sintering of the present invention, be preferably and comprise two or more upgrading compositions, when it makes dielectric ceramic composition, can be in the process of sintering, produce nano particle and separate out in crystal boundary (grain boundary), using increases the insulation resistivity of making dielectric ceramic crystal boundary in the monolithic ceramic capacitor, and then promotes the reliability of monolithic ceramic capacitor; Simultaneously, the upgrading composition also can improve the physical strength of dielectric ceramic composition, suppresses to make the crackle of monolithic ceramic capacitor.In addition, because the upgrading composition also can be in conjunction with the sour plain oxonium ion of non-bridge formation in sintering adds composition, thereby can improve the stability that sintering adds composition, promote the low-temperature sintering characteristic of making dielectric ceramic composition.
In this, if the total content of upgrading composition is excessively low, can't effectively brings into play it and make an addition to the effect that sintering adds composition; Otherwise, then can't in sintering adds composition, dissolve fully if the total content of upgrading composition is too high, on the contrary the low-temperature sintering characteristic of deteriorated dielectric ceramic composition.Therefore, the total amount of adding composition take sintering is as 100 moles, and the content that is preferably the upgrading composition is controlled between 0.1 mole and 5 moles.
Accordingly, add in the composition in sintering of the present invention, each composition is preferably with above-mentioned ratio and evenly mixes, and after Overheating Treatment, makes the trickle spherical particle of about 50 nanometer to 100 nanometers of particle diameter with suitable lapping mode.
In addition, for reaching aforementioned purpose, the present invention also provides a kind of dielectric ceramic composition, and said composition comprises: barium titanate (BaTiO 3); Aforesaid sintering adds composition; And at least one less important composition, this submember is selected from the following group that forms: rare earth oxide, magnesium-containing compound, manganese oxide (MnO), and aluminium sesquioxide (Al 2O 3).Wherein, barium titanate is the main component of dielectric ceramic composition of the present invention, take the content of barium titanate as 100 moles, the content of described at least one less important composition is between 0.05 mole and 4.8 moles, and sintering adds the content of composition between 0.5 mole and 5 moles.
In this, when the content of magnesium-containing compound was lower than 0.5 mole, dielectric ceramic composition can be at sintering under the reducing atmosphere and oxidation, was difficult to control the crystal grain-growth of dielectric ceramic composition; Otherwise, when the content of magnesium-containing compound is higher than 3 moles, then can improve the sintering temperature of dielectric ceramic composition.Therefore, in dielectric ceramic composition, take barium titanate as 100 moles, the content that is preferably magnesium-containing compound is controlled between 0.5 mole and 3 moles.In this, magnesium-containing compound can be magnesium oxide or magnesiumcarbonate, but is not limited only to this.
In dielectric ceramic composition of the present invention, rare earth oxide can in order to promote the high temperature accelerated aging, make temperature coefficient of permittivity (Tcc) more stable.When the content of rare earth oxide is lower than 0.2 mole, can reduce the high temperature accelerated aging, temperature coefficient of permittivity can be more unstable along with temperature variation, causes the reliability of monolithic ceramic capacitor to reduce; Otherwise when the content of rare earth oxide is higher than 1 mole, the rising of sintering temperature will make specific inductivity descend.Therefore, in dielectric ceramic composition, take barium titanate as 100 moles, the content that is preferably rare earth oxide is controlled between 0.2 mole and 1 mole.In this, rare earth oxide can be Dysprosium trioxide (Dy 2O 3), yttrium oxide (Y 2O 3) or its combination, but be not limited only to this.
In dielectric ceramic composition of the present invention, manganese oxide can improve insulation resistance, and promotes the high temperature accelerated aging.When the content of manganese oxide is lower than 0.05 mole, can reduce the high temperature accelerated aging, cause the reliability of monolithic ceramic capacitor to reduce; Otherwise, when the content of manganese oxide is higher than 0.3 mole, again can deteriorated insulation resistance and dielectric capacity.Therefore, in dielectric ceramic composition, take barium titanate as 100 moles, the content that is preferably manganese oxide is controlled between 0.05 mole and 0.3 mole.
In dielectric ceramic composition of the present invention, take barium titanate as 100 moles, when the content of aluminium sesquioxide is lower than 0.05 mole, the sintering temperature of dielectric ceramic composition will be improved; Otherwise, when the content of aluminium sesquioxide is higher than 0.5 mole, will be difficult to control the crystal grain-growth of dielectric ceramic composition.Therefore, the content that is preferably aluminium sesquioxide is controlled between 0.05 mole to 0.5 mole.
In dielectric ceramic composition of the present invention, sintering adds composition and can be used as a kind of sintering adjustment auxiliary agent, in order to guarantee the low-temperature sintering characteristic of dielectric ceramic composition.Take barium titanate as 100 moles, when sintering interpolation composition is lower than 0.5 mole, can't effectively bring into play the effect that makes an addition to dielectric ceramic composition; Otherwise, when if sintering adds the too high levels of composition, understand the crystal boundary of the dielectric ceramic layer of the monolithic ceramic capacitor that forms at sintering and separate out, carry out sharp sintering, and the low-temperature sintering characteristic of reduction dielectric ceramic composition, and then the electrical capacity of monolithic ceramic capacitor is descended.Therefore, in dielectric ceramic composition, take barium titanate as 100 moles, be preferably the content that sintering is added composition and be controlled between 0.5 mole and 5 moles.
In dielectric ceramic composition of the present invention, more optionally comprise vanadous oxide (V 2O 3).Wherein, vanadous oxide can together promote with rare earth oxide the high temperature accelerated aging of said composition, makes temperature coefficient of permittivity more stable.When the content of vanadous oxide is lower than 0.025 mole, can reduce the high temperature accelerated aging; Otherwise, when the content of vanadous oxide is higher than 0.25 mole, will the product of insulation resistance and specific inductivity be reduced.Therefore, in dielectric ceramic composition, take barium titanate as 100 moles, the content that is preferably vanadous oxide is controlled between 0.025 mole and 0.25 mole.
Accordingly, dielectric ceramic composition of the present invention will be mixed with content according to above-mentioned composition, be made in the dielectric ceramic composition that carries out sintering below 1200 ℃, to be preferably and to carry out sintering in 800 ℃ to 1120 ℃ temperature range.Therefore, the present invention comprises the dielectric ceramic composition that sintering adds composition and can possess good low-temperature sintering characteristic.
Moreover for reaching aforementioned purpose, the present invention provides again a kind of monolithic ceramic capacitor, comprising: a dielectric ceramic body comprises: a plurality of dielectric ceramic layers, and it is to comprise above-mentioned dielectric ceramic composition institute sintering to form; A plurality of inner electrode layers, these inner electrode layers and dielectric ceramic layer are mutual overlapping being formed in the dielectric ceramic body; And two outer electrode layers, be arranged at respectively these external relative two sides of dielectric ceramic, and be connected with the inner electrode layer of dielectric ceramic body.
Wherein, dielectric ceramic composition comprises the fine particle of barium titanate, and the thickness of each dielectric ceramic layer can be about several microns, is preferably between 1.0 microns and 3.5 microns.
In monolithic ceramic capacitor of the present invention, inner electrode layer and outer electrode layer are preferably by an electro-conductive material made, and this electro-conductive material can be various metallic substance, as: the nickel metal, but be not limited only to this.In addition, can form electric capacity between inner electrode layer and the inner electrode layer, and outer electrode layer can interconnect with inner electrode layer, to make a monolithic ceramic capacitor.
Accordingly, when the present invention utilizes above-mentioned dielectric ceramic composition to make monolithic ceramic capacitor, can make electrical condenser possess excellent physical strength, and promote simultaneously crystal boundary resistivity and the reliability of the dielectric ceramic layer of basic unit's ceramic condenser.
In sum, sintering interpolation composition of the present invention and dielectric ceramic composition thereof are owing to added at least two kinds upgrading composition, make it possess excellent low-temperature sintering characteristic, make composition of the present invention can in lower sintering temperature and reducing atmosphere, carry out sintering, use the microscopic uniformity that promotes between monolithic ceramic capacitor dielectric ceramic layer and inner electrode layer, and then make it possess excellent reliability.
Description of drawings
Fig. 1 is the structural representation of monolithic ceramic capacitor of the present invention.
Fig. 2 is the microcosmic synoptic diagram of dielectric ceramic composition of the present invention.
Main nomenclature among the figure:
1 monolithic ceramic capacitor, 11 dielectric ceramic bodies, 111 dielectric ceramic layers
112 inner electrode layers, 12 outer electrode layers
21 crystal grain, 22 interior rice grains
Embodiment
Below, with the preparation method that specifically describes sintering interpolation composition, dielectric ceramic composition of the present invention and comprise the dielectric ceramic electrical condenser of above-mentioned composition, so that content of the present invention more at large to be described.
Embodiment
" the preparation sintering adds composition "
With silicon-dioxide (SiO 2), boron trioxide (B 2O 3) and tindioxide (SnO 2), tungstic oxide (WO 3) and molybdic oxide (MoO 3) for the upgrading homogeneous chemical composition be mixed into Powdered after, place hot environment to heat-treat, and pulverize with ball mill grinding, form the spherical particle of particle diameter about 50 to 100 interior rice, add composition as sintering of the present invention.Wherein, the composition and the content (mole) that add of each preparation example is as shown in table 1.
Table 1: sintering adds composition and the content of composition in each preparation example
Figure BDA0000102362790000051
In preparation example 1 to preparation example in 4, take integral sintered interpolation composition as 100 moles, the content of silicon-dioxide is all between 60 moles and 85 moles, and the content of boron trioxide is all between 10 moles and 35 moles, and the total content of upgrading composition is all between 0.1 mole and 5 moles.Yet preparation example 5 is added composition for the sintering that does not comprise any upgrading composition, and preparation example 6 only has a kind of upgrading composition, and its content surpasses the preferred range that the present invention defines.
Sintering of the present invention adds composition will further be made into the dielectric ceramic composition that is applied to monolithic ceramic capacitor through the following step.
" preparation dielectric ceramic composition "
With the sintering of aforementioned each preparation example add composition powder, barium titanate (main component of dielectric ceramic composition), at least one less important composition, and vanadous oxide evenly mix, to make the dielectric ceramic composition of different qualities.In this, submember comprises Dysprosium trioxide (Dy 2O 3), yttrium oxide (Y 2O 3), magnesium oxide (MgO), manganese oxide and aluminium sesquioxide.Each embodiment and comparative example form with the one-tenth branch of different content respectively, and its composition and content (mole) are as shown in table 2.
Table 2: composition and the content of each embodiment and comparative example dielectric ceramic composition
Figure BDA0000102362790000061
" preparation monolithic ceramic capacitor "
At first, with dielectric ceramic composition, organic binder and the solvent of above-mentioned each embodiment and comparative example, form slurry to form dielectric ceramic.
Afterwards, slurry is applied in about 5 microns living embryo strip (green sheets), and inner electrode layer is printed on the living embryo strip, make living embryo chip (green chip) after repeating overlapping 8 layers.
Then, in 250 to 350 ℃ of lower lasting living embryo chip are heat-treated reached more than 40 hours.In order to prevent from being occured in the process of sintering by the metal inner electrode layer of nickel the phenomenon of oxidation, be that life embryo chip is placed 1100 to 1200 ℃ and reducing atmosphere and oxygen pressure is 10 -6To 10 -10Carry out sintering in the sintering oven of atm.
After the dielectric ceramic body is finished sintering, be to smear copper metal layer in these external two sides of dielectric ceramic, and carry out the electrode sintering under in 850 to 920 ℃, to make the outer electrode layer of dielectric ceramic body.Afterwards, after the outer electrode layer that sintering is complete is electroplated, namely finish the production process of monolithic ceramic capacitor.
Accordingly, can make monolithic ceramic capacitor of the present invention by above-mentioned method.As shown in Figure 1, this monolithic ceramic capacitor 1 comprises: dielectric ceramic body 11 and two outer electrode layers 12, this outer electrode layer 12 are the relative two sides that are arranged at respectively outside the dielectric ceramic body 11.
The dielectric ceramic layer 111 and inner electrode layer 112 that in dielectric ceramic body 11, comprise a plurality of mutual overlapping formation.Outer electrode layer 12 is to be connected with the inner electrode layer 112 of dielectric ceramic body 11.In this, dielectric ceramic layer 111 is obtained by above-mentioned dielectric ceramic composition.
The monolithic ceramic capacitor that the dielectric ceramic composition of embodiment 1 to embodiment 5, comparative example 1 and comparative example 2 is made passes through identical test mode, be evaluated under the different sintering temperatures, the specific inductivity of each monolithic ceramic capacitor, loss factor, rate of change of capacitance and insulation resistivity, its assessment result is as shown in table 3.
Table 3: the assessment result of the monolithic ceramic capacitor of each embodiment and comparative example
Figure BDA0000102362790000071
As shown in table 3, monolithic ceramic capacitor by dielectric ceramic composition of the present invention (embodiment 1 to embodiment 5) made, even carry out sintering with the sintering temperature that is lower than 1200 ℃, also can possess excellent specific inductivity and lower loss factor and rate of change of capacitance.
In addition, in embodiment 1 to embodiment 5, because sintering additive all possesses an amount of upgrading composition (tungstic oxide, molybdic oxide and tindioxide), make it in the process of sintering, can generate a plurality of nano particles 22 (as shown in Figure 2) at the grain boundaries of barium titanate crystal grain 21.These nano particles 22 can promote the insulation opposing of dielectric ceramic composition, and then promote the reliability of monolithic ceramic capacitor.Test result by table 3 also shows that each embodiment that comprises an amount of upgrading composition can bring into play its effect, makes monolithic ceramic capacitor can possess higher insulation resistivity.
Yet, review the test result of comparative example 1 and comparative example 2, because this sintering adds the too high levels that composition does not add any upgrading composition or its upgrading composition, can't keep due specific inductivity and cause carrying out at low temperatures the prepared electrical condenser of sintering, improve simultaneously the loss factor of electrical condenser.Hence one can see that, and the dielectric ceramic composition of comparative example 1 and comparative example 2 can't possess good low-temperature sintering characteristic.
Accordingly, the invention provides a kind of low sintering sintering interpolation composition and dielectric ceramic composition thereof of being fit to, owing to added at least two kinds of upgrading compositions in the said composition, and each composition all is controlled in the suitable scope, makes said composition can possess excellent low-temperature sintering characteristic.When said composition when making monolithic ceramic capacitor because it can carry out sintering under lower temperature, can guarantee the microscopic uniformity between dielectric ceramic layer and inner electrode layer, use the physical strength and the reliability that promote simultaneously monolithic ceramic capacitor.

Claims (10)

1. a sintering adds composition, comprising:
Silicon-dioxide;
Boron trioxide; And
At least two upgrading compositions, these upgrading compositions are selected from the following group that forms: tungstic oxide, molybdic oxide and tindioxide;
Wherein add total composition as 100 moles take sintering, the content of silicon-dioxide is between 60 moles and 85 moles, and the content of boron trioxide is between 10 moles and 35 moles, and the content of this at least two upgradings composition is between 0.1 mole and 5 moles.
2. sintering as claimed in claim 1 adds composition, and it is to be spherical particle that this sintering adds composition, and its particle diameter is 50 nanometer to 100 nanometers.
3. dielectric ceramic composition comprises:
Barium titanate;
A kind of such as each described sintering interpolation composition in the claim 1 to 2; And
At least one less important composition, this submember are selected from the following group that forms: rare earth oxide, magnesium-containing compound, manganese oxide and aluminium sesquioxide;
Wherein take the content of barium titanate as 100 moles, described sintering adds the content of composition between 0.5 mole and 5 moles, and the content of described at least one less important composition is between 0.05 mole and 4.8 moles.
4. dielectric ceramic composition as claimed in claim 3, the content of its middle rare earth is between 0.2 mole and 1 mole, magnesium-containing compound is between 0.5 mole and 3 moles, and manganese oxide accounts between 0.05 mole and 0.3 mole, and aluminium sesquioxide accounts between 0.05 mole and 0.5 mole.
5. dielectric ceramic composition as claimed in claim 3, wherein said rare earth oxide is Dysprosium trioxide, yttrium oxide or its combination.
6. dielectric ceramic composition as claimed in claim 3, wherein said magnesium-containing compound is magnesium oxide or magnesiumcarbonate.
7. dielectric ceramic composition as claimed in claim 3, this dielectric ceramic composition also comprises vanadous oxide, take the content of barium titanate as 100 moles, the content of vanadous oxide is between 0.025 mole and 0.25 mole.
8. monolithic ceramic capacitor comprises:
One dielectric ceramic body comprises:
A plurality of dielectric ceramic layers, described dielectric ceramic layer are to comprise such as each described dielectric ceramic composition institute sintering in the claim 3 to 7 to form;
A plurality of inner electrode layers, these inner electrode layers and dielectric ceramic layer be overlapping being formed in the described dielectric ceramic body mutually; And
Two outer electrode layers be arranged at respectively these external relative two sides of described dielectric ceramic, and described outer electrode layer are connected with the inner electrode layer of dielectric ceramic body.
9. monolithic ceramic capacitor as claimed in claim 8, wherein the thickness of each dielectric ceramic layer is between 1.0 and 3.5 microns.
10. monolithic ceramic capacitor as claimed in claim 8, wherein, described inner electrode layer and outer electrode layer are made by an electro-conductive material.
CN201110330394.3A 2011-10-26 2011-10-26 Sintering adds composition, dielectric ceramic compositions and their application Active CN103073305B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110330394.3A CN103073305B (en) 2011-10-26 2011-10-26 Sintering adds composition, dielectric ceramic compositions and their application

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110330394.3A CN103073305B (en) 2011-10-26 2011-10-26 Sintering adds composition, dielectric ceramic compositions and their application

Publications (2)

Publication Number Publication Date
CN103073305A true CN103073305A (en) 2013-05-01
CN103073305B CN103073305B (en) 2016-03-02

Family

ID=48150029

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110330394.3A Active CN103073305B (en) 2011-10-26 2011-10-26 Sintering adds composition, dielectric ceramic compositions and their application

Country Status (1)

Country Link
CN (1) CN103073305B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952742A (en) * 2017-03-14 2017-07-14 苏州海凌达电子科技有限公司 A kind of preparation method of high-performance barium titanate based coextruded film super capacitor material
CN109671565A (en) * 2017-10-13 2019-04-23 三星电机株式会社 Multilayer ceramic capacitor
CN111180206A (en) * 2018-11-13 2020-05-19 三星电机株式会社 Multilayer ceramic electronic component

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080218935A1 (en) * 2007-03-05 2008-09-11 Ferro Corporation Ultra Low Temperature Fixed X7R And BX Dielectric Ceramic Composition And Method Of Making
CN101343177A (en) * 2008-08-14 2009-01-14 广东风华高新科技股份有限公司 BaNdSmPr)Ti5O14 microwave ceramic dielectric material and preparation thereof
CN101492293A (en) * 2009-03-09 2009-07-29 陕西科技大学 Barium titanate based Y5P ceramic dielectric material and method of producing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080218935A1 (en) * 2007-03-05 2008-09-11 Ferro Corporation Ultra Low Temperature Fixed X7R And BX Dielectric Ceramic Composition And Method Of Making
CN101343177A (en) * 2008-08-14 2009-01-14 广东风华高新科技股份有限公司 BaNdSmPr)Ti5O14 microwave ceramic dielectric material and preparation thereof
CN101492293A (en) * 2009-03-09 2009-07-29 陕西科技大学 Barium titanate based Y5P ceramic dielectric material and method of producing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952742A (en) * 2017-03-14 2017-07-14 苏州海凌达电子科技有限公司 A kind of preparation method of high-performance barium titanate based coextruded film super capacitor material
CN109671565A (en) * 2017-10-13 2019-04-23 三星电机株式会社 Multilayer ceramic capacitor
JP2019075530A (en) * 2017-10-13 2019-05-16 サムソン エレクトロ−メカニックス カンパニーリミテッド. Multilayer ceramic capacitor
CN109671565B (en) * 2017-10-13 2021-03-30 三星电机株式会社 Multilayer ceramic capacitor
JP7114850B2 (en) 2017-10-13 2022-08-09 サムソン エレクトロ-メカニックス カンパニーリミテッド. Multilayer ceramic capacitor
CN111180206A (en) * 2018-11-13 2020-05-19 三星电机株式会社 Multilayer ceramic electronic component

Also Published As

Publication number Publication date
CN103073305B (en) 2016-03-02

Similar Documents

Publication Publication Date Title
US9266781B2 (en) Nano complex oxide doped dielectric ceramic material, preparation method thereof and multilayer ceramic capacitors made from the same
KR100983046B1 (en) Borosilicate glass compositions for sintering agent, dielectric compositions and multilayer ceramic capacitor using the same
US9076578B2 (en) Dielectric composition and ceramic electronic component including the same
US10781132B2 (en) Glass ceramics sintered body and coil electronic component
KR20090033099A (en) Dielectric ceramic composition and electronic device
EP1792881A1 (en) Dielectric ceramic composition, electronic device, and multilayer ceramic capacitor
KR101994745B1 (en) Low temperature sintering dielectric composition and multilayer cderamic capacitor
KR101226283B1 (en) Dielectric compositions and multilayer ceramic capacitor having high capacitance using the same
US8654506B2 (en) Laminate type semiconductor ceramic capacitor with varistor function
CN106505144A (en) Multilayer electric card ceramic component and preparation method thereof
TW201628989A (en) Glass ceramic composition and coil electronic component
US9064638B2 (en) Dielectric ceramic, stack ceramic electronic component, and method of manufacturing these
KR20120048905A (en) Conductive paste composition and method for producing multilayer ceramic capacitor using the same
CN101183610A (en) Chemical coating prepared base metal internal electrode multi-layer ceramic chip capacitor dielectric material
CN1983478A (en) Electronic part, dielectric porcelain composition and producing method thereof
CN103073305A (en) Sintering additive composition and dielectric ceramic composition, and applications thereof
KR100790682B1 (en) Glass compositions for low temperature sintering, glass frit, dielectric compositions and multilayer ceramic capacitor using the same
US7138352B2 (en) Dielectric material and the method of preparing the same
CN114380591B (en) Ceramic capacitor made of dielectric ceramic composition and manufacturing method thereof
CN116023130B (en) Capacitor ceramic powder, preparation method thereof and MLCC
TWI461383B (en) Sintering aid composition, dielectric ceramic composition, and multilayer ceramic capacitor comprising the same
JP6504241B1 (en) Glass ceramic sintered body and coil electronic component

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant