CN103069493B - magnetic memory cell - Google Patents
magnetic memory cell Download PDFInfo
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- CN103069493B CN103069493B CN201080068817.2A CN201080068817A CN103069493B CN 103069493 B CN103069493 B CN 103069493B CN 201080068817 A CN201080068817 A CN 201080068817A CN 103069493 B CN103069493 B CN 103069493B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
Abstract
The disclosed subject matter relates to a non- volatile memory bit cell (500 or 600) for solid-state data storage, including, e.g., an elongated magnetic element (102) or "dot". For appropriate geometry and dimensions of the dot, a two-fold, energetically-degenerate micromagnetic configuration (100 or 200) can be stabilized. Such a stable configuration can consist of two magnetic vortices (1081, 1082) and a flower state region (110). Due to energy minimization, the flower state region can be off-center (relative to a minor axis (106)) and along the major axis (104) of the dot. An electrical current (302) flowing perpendicular to the plane at, or in proximity to, the dot center can, according to current polarity, switch the configuration or state of the dot between the two specular magnetically stable configurations (e.g., a write operation). Reading of the cell state can be accomplished by using the magnetoresistive effect.
Description
Technical field
Background technology
Almost each computer, electrical equipment（appliance）Or portable set mainly utilizes three kinds of different memorizer skills
Art is storing and retrieve（retrieve）Information：（1）Magnetic hard-disk（HD）,（2）Dynamic random access memory（DRAM）, and/
Or（3）Flash memory technology.Generally it is used in combination up to because needs overcome the various restrictions gone out by every kind of single Technological expression
Three kinds of different technologies.
For example, magnetic HD provides the packing density of maximum possible, but magnetic HD uses complicated frame for movement
（mechanics）To realize this high data density.The level of complexity of this frame for movement causes at least three kinds adverse consequencess.It is special
Be not, magnetic HD be at a slow speed, power consumption and it is frangible（quite delicate）, latter two defect is in portable set
In be largely unacceptable.It is widely used in flash disk（pen drive）It is also with the semiconductor flash memory in storage card
Non-volatile memory banks, but be not exposed to and magnetic HD identical fragility.Even if as a result, flash memory technology cannot be realized being similar to
Packing density, be also still considered as replace magnetic HD drive optimal candidate object.
In fact, can commercially be obtained today based on solid-state HD of flash memory technology.However, from initial commercialization
Several years are started only to have crossed afterwards, this solid-state HD seems the limit for having reached the density of data storage, despite the fact that being to deposit
The little an order of magnitude of amplitude of storage capacity still than standard magnetic HD in amplitude.In principle, the packing density of this flash memory technology
Restriction equally also limit the performance of the DRAM that is exceedingly fast.Particularly, in the case of the two, information is obtained by way of storage electric charge
To retain, but electric charge is always leaked, or when tunnel barrier is made into the speed with raising as thin as possible by raceway groove gesture
Build leakage（Such as in DRAM）Or, in bit cell（bit cell）Pass through when being made into the density with increase as little as possible
Potential barrier side wall（barrier sidewall）Leakage（Such as in current solid-state HD）.
The consideration of this respect seems to indicate that the memorizer in future still may use magnetic material, if this material does not meet with
If charge dissipation/leakage.For example, by using such material, just it is not necessary to depend on the electric charge of electronics.Mutually on the contrary can be with
Depend on magnetic moment.This is first by the Albert Fert that Nobel Prize was honoured with 2007（Baibich etc. writes, Physical
Review Letters, volume 61, the 2472-2475 page）With Peter Gr ü nberg（Binach etc. writes, Physical
Review B, volume 39, the 4828-4830 page）Another kind of scheme of the revolutionary concept after spintronics for introducing.
In view of the recent breakthrough of these and other, it has been proposed that substantial amounts of use magnetic bit unit but have it is frangible
The device of structure division.Such magnetic bit unit is commonly referred to as magnetic RAM（MRAM）, this is because
They are combined together the function of the non-volatile and random access memory of magnetic storage.In these devices, although
Reading is easily achieved by using any magnetoresistance or Hall effect, but information can pass through the magnetic of upset patterning
The whole direction of magnetization of property structure and be written into（For example, see, the US 2001/0035545 that Schuster-Woldan et al. writes
（Al））, or can be by displacement（displace）Neticdomain wall between stable position（It is typically denoted as geometric contraction）
（For example, see, the US 7102477 that Bland et al. writes（B2）With the US 6727537 of Wunderlich（B2））And be written into.Most
The nearly further possibility for proposing is the core or chirality for switching the vortex in magnetic dot（chirality）（See, for example,
The US 2006/0023492 that Min et al. writes（Al））.
However, in all these situations, when ablation process depends on the office by produced by the electric current flowed in address wire
During portion magnetic field（Nozaki et al. writes, Journal of Applied Physics, volume 93, the 7295-7297 page）, density quilt
Electromagnetic crosstalk effect is limited.Alternatively, write may rely on spin transfer torque effect（spin
transfer torque）（Slonczewski, Journal of Magnetism and Magnetic Materials, the
Volume 159, the L1-L7 page, the US 7106624 that Huai et al. writes（B2））, but up to the present, this needs big electric current density,
The restriction of the bit density for being as a result caused by Joule heat and causing.
Therefore, challenge is yet suffered from magnetic bit unit field, to find extendible magnetic texure, the magnetic junction
Structure can be while using little reset current in two stable magnetic configurations（magnetic configuration）Between
Switching.
The content of the invention
The summary of the simplification of subject is given below, to provide the basic reason of some schemes to disclosed theme
Solution.This is generally if it were not for the exhaustive overview of subject.It is intended to neither mark subject key element or weight
Element is wanted, nor describing the scope of subject in detail.Its unique purpose is as the more detailed description made after a while
Preamble and in the form of a kind of simplification propose subject some concepts.
Presently disclosed subject matter, in one or more scheme, including a framework, it includes at least two magnetic stable states
Magneticss or magnetic " point ".Magneticss can be ferromagnetic and electric conductivity, and with it is elongated allowed it is double
（two-fold）Energy degeneracy（energetically-degenerate）Magnetic configuration geometry（For example, it is oval
Shape）.
The purpose related to other accordingly, magneticss can include two kinds of vortexs and deviate from the short of magneticss
The flower-shaped state at axle center（flower state）Region, wherein described two vortexs and flower state region are set at two
On the magneticss of one of the stable position shape of magnetic.It is appreciated that because magneticss can be set in two kinds of stable position shapes
One of them（For example, flower vorticity）, therefore a kind of flower vortex（flower vortex state）State can be defined as shape
State " 0 ", and another kind can represent state " 1 ".Therefore, the magneticss can serve as the core body of bit memory cell
（core）.
It should be appreciated that being used for bit cell（All bit cells as described herein）Magneticss initial magnetic
Change state needs not to be one of two kinds of colored vortex position shapes, such as when magneticss are formed from the film patterning for being grown.It is in office
In the case of what, the structure can also be using the stable method of magneticss magnetic be made, and whether it is absolute energy according to flower vorticity
Minimum or relative energy it is minimum and in one of two modes by magneticss band to flower vortex position shape.For example, by outside applying face
, amplitude not less than film saturation magnetization field, magneticss can be brought into the minimum colored vorticity of relative energy.Can
Alternatively, only in the case where flower vorticity is absolute energy minimum, initialization can be by heating system to its Curie's temperature
Mode more than degree is obtaining.If more than one magneticss are aggregated is arranged in an array to form storage device,
All of magneticss all will be arranged to spend one of vorticity simultaneously.Such initialization program generally only needs to carry out one
It is secondary, and colored vorticity can be held permanently in afterwards, it is assumed that the bit cell battle array in course of normal operation as described herein
Row are suitably masked if magnetic field.
Additionally, magneticss can also match somebody with somebody the reading device of the current state for being ready for use on sensing magneticss, it can be used
Make read operation to judge that magneticss are in state " 0 " or in state " 1 ".Additionally, magneticss can match somebody with somebody is ready for use on maintenance
（assert）With the write device of any one consistent magnetic stable state in the magnetic configuration of degeneracy, it can serve as write operation to maintain shape
State " 0 " or state " 1 ".
Explained below and appended accompanying drawing illustrate in detail one or more non-limiting examples some are illustrative
Scheme.However, these schemes illustrate only a small part of the method for the various principles that can adopt claimed subject,
And theme required for protection is intended to include all these schemes and its equivalent.When being considered in conjunction with the accompanying, required guarantor
The further advantage and distinguishing characteristicss of the theme of shield will become clear from from the detailed description of following embodiment.
Description of the drawings
Fig. 1 shows the block diagram of the system with least two magnetic stable states, and the system is arranged in the first magnetic and stablizes
State.
Fig. 2 describes the block diagram of the system with least two magnetic stable states, and the system is arranged in the second magnetic and stablizes
State.
Fig. 3 A show that description can be used magneticss in two colored vorticities（Respectively by shown in Fig. 1 and Fig. 2
Example goes out）Between the diagram for schematically illustrating of physical principle that switches over.
Fig. 3 B are provided and can be applied to magneticss and be used for the graphic extension 310 of the current impulse of write operation.
Fig. 4 shows the graphic extension of the differentiation of magneticss position shape when write current is applied.
Fig. 5 provides the diagram of the figure description of the exemplary embodiment for showing the memory element write-enable.
Fig. 6 depicts the diagram of the figure description of such system, and the system representation has for write operation and read operation
The exemplary embodiment of the memory element of both integrated magnetic resistance contact site.
Fig. 7 shows the figure description of the view for providing magneticss, this view show that in magnetoresistive stack along magnetic unit
The change of the magnetic configuration detected with the magnetoresistive stack when short axle of part is shifted.
Fig. 8 depicts the block diagram of such system, and single bit storage locations are integrated into a crystal by the system description
The embodiment of one chip architecture of pipe.
Fig. 9 is the block diagram of such system, and the system description is integrated into single bit storage locations without transistor
The exemplary embodiment of chip architecture.
Figure 10 describes the exemplary process diagram of such process, and the process is defined for making magneticss magnetic stable
Method.
Figure 11 shows the exemplary process diagram of such process, and the process is defined for tieing up for suitable magneticss
The method for holding specific magnetic stable state.
Figure 12 shows the exemplary process diagram of such process, the process define for for suitable magneticss
The method for maintaining specific magnetic stable state relatively to provide additional features or scheme.
Specific embodiment
Referring now to one or more embodiments of Description of Drawings, wherein similar reference is similar for referring in the whole text
Element.In the following description, for purposes of explanation, many details are described, to provide to each embodiment
Thorough understanding.It will be apparent, however, that theme required for protection can be real in the case of without these details
Apply.In other instances, known structure and equipment illustrates in block diagram form, in order to describe various embodiments.
Invention disclosed herein relates generally to a kind of magnetic, the bit cell of electric conductivity or its component, by applying
Perpendicular to the small current of bit cell plane, the bit cell or its component can be in two stable mirror images（specular）
Magnetic configuration between switch.The unit can be made up of elongated magneticss or magnetic " point ", and its geometry is selected as
Can stablize and be vortexed by two and flower-shaped state（flower state）The magnetic configuration heterogeneous of region composition.This geometry
A kind of possible realization be the ellipse in predetermined thickness and aspect ratio.Such structure represents double（two-fold）
Degeneracy（degenerate）The minimum system of relative energy.
It will be appreciated that given steady statue is not necessarily absolute energy minimum, but it can be by applying generally not
Outside face less than film saturation magnetization（out-of-plane）And be easy to stable.Due to rotation（curling）Magnetic configuration,
It is magnetostatic between bit cell（magnetostatic）Reciprocal action is very little, and this allows High Density Integration.Additionally, by applying
Plus perpendicular to the electric current of unit plane, the unit can be switched between the two states.This electric current can be forced into little
In the region in a region, the region can be but must be not necessarily concentric with described region.
Therefore, based on the electric current, can produce according to current polarity to vortex be attract and to another whirlpool
Rotation is the magnetic potential repelled.By making the galvanic areas write current that can realize minimum concentric with the point.But, it means that make
With the second magnetic resistance contact site（contact）For digital independent.However, shifted relative to dot center by making galvanic areas, together
One contact site can be used for the reading of data and write both.
As used in this application, word " exemplary " be used to represent as an example, example or explanation.Retouched herein
State as " exemplary " any scheme or design be not necessarily to be construed as than other side or design it is more preferably or more beneficial.
On the contrary, the use tendency of word " exemplary " is presented concept in a concrete fashion.Just as used in this application, art
Language "or" refers to the "or" of inclusive rather than the "or" of exclusiveness.Therefore, unless otherwise stated, or from the context clearly may be used
Know, " X adopts A or B " is intended to mean that the displacement of any natural inclusive.If that is, X adopts A；X adopts B；Or X
Using both A and B, then meet under any aforesaid example " X adopts A or B ".Additionally, unless otherwise stated, or from upper and lower
It will be clear that intending referring to singulative, the article " one " or " " used in application and appended claims book is general in text
Should be interpreted that and mean " one or more ".
With reference now to accompanying drawing, at first with reference to Fig. 1, describe the system 100 with least two magnetic stable states.Generally, system
100 can be made up of elongated conductive magneticss 102, and the magneticss 102 have allows double energy degeneracy
The geometry of magnetic configuration.First example of the magnetic configuration of energy degeneracy is illustrated here, and the magnetic configuration of energy degeneracy
Second example be referred to Fig. 2 and be found, combinations thereof is intended to indicate that the two of the magnetic configuration of double energy degeneracy
The example of individual magnetic stable state.
Additionally, system 100 also describes both the major axis 104 and short axle 106 being associated with magneticss 102 with dotted line,
It is herein the purpose for description and/or reference using them, including those purposes for other figures.Additionally, working as magnetic
Property element 102 be generally envisaged as when being a kind of ferromagnetic material of electric conductivity, some diagrams（For example, Fig. 1, Fig. 2 and Fig. 7）It is logical
In the expression face of mistake（in-plane）Magnetized multiple arrows depict magneticss 102, this pass on subject some
Concept and function aspects are considered as more effective.
In one or more schemes, magneticss 102 can include the first vortex 1081With the second vortex 1082,
They may be collectively referred to herein as vortex 108.Additionally, magneticss 102 can include flower state region 110, it may be located at deviation
In the center of short axle 106.For example, in FIG, flower state region 110 is located at the left side of short axle 106, and spends state area in fig. 2
Domain 110 is located at the right side of short axle 106.However, in the case of the two, vortex 108 and flower state region 110 are arranged in
The stable position shape of magnetic.Fig. 1 shows the stable position shape of the first magnetic, and Fig. 2 to represent double, energy degeneracy magnetic configuration corresponding
The stable position shape of second magnetic.It is understood that the relative position of vortex 108 and flower state region 110 may rely on magnetic
The shape and/or geometry of element 102, this can be configured to ellipse in one or more schemes.
Under normal circumstances, as shown in figure 1, two vortexs 108 centered on major axis 104, and will will also be located in short axle
106 opposite side, but need not all be such case.Anyway, for the specific aspect ratio and thickness of magneticss 102
Degree, in magnetization rotation（curl）And it is the first vortex 108 to form example1With the second vortex 1082Two vortex situations
It is lower to there is stable magnetic configuration.Further, since positive energy exchange is minimum, thus two vortexs 108 can typically pass through contrary handss
Levying property is characterized, wherein, chirality is related to magnetized direction of rotation in the face of given vortex（For example, the clockwise or inverse time
Pin）.Thus, the first vortex 1081Chirality with the second vortex 1082The contrary direction of chirality rotate.
Because two vortexs 108 have contrary chirality, can be with（For example, in flower state region 110）It was observed that
The referred to herein as distribution of magnetization of " flower-shaped state ".For example, flower-shaped state is characterized as being perpendicularly oriented in major axis 106 and/or parallel
In the mean magnetizing of short axle 108, it can affect（effect）Or sign magnetic stable state or magnetic configuration.
In one or more schemes, magneticss 102 can be configured to（Hereafter will be described in further detail）Make
First vortex 1081, the second vortex 1082Position shape stable up to the second magnetic is displaced to flower state region 110 along major axis 106（Example
Such as, Fig. 2）, stably position shape energy is equal to first magnetic configuration to second magnetic（For example, Fig. 1）.For example, referring in particular to Fig. 2, tool
The closure for having the stray magnetic field 202 of least energy cost means to spend state region 110 to be shifted along long axis direction（Do not show
Go out, refer to the element 110 in Fig. 1）.It is appreciated that this displacement may be accompanied by shifting of two vortexs 108 along same axle
Position.In any case, final stable magnetic configuration by be shown in Fig. 1 and Fig. 2 two energy equivalent position shape wherein it
One.By convention, Fig. 1 represents the stable position shape of the first magnetic, and Fig. 2 represents the stable position shape of the second magnetic, its any one herein may be used
It is called " flower is vortexed " position shape or " flower is vortexed " state.
It should be appreciated that because magneticss 102 can be configured to enable（enable）Two states, and enter one
Both states of step ground are magnetic stable states, so magneticss 102 can serve as the core body of single bit storage locations.For example, two
One of flower vorticity can represent logical zero, and another flower vorticity can represent logical one.It is such in order to realize
Function, magneticss 102 can be extended to offer to be used to switch between specific flower-shaped state and/or remains specific flower-shaped
State（For example, it is functionally equivalent to write operation）, and provide current for sensing in the way of nondestructive or non-change
Flower-shaped state（For example, equivalent to the function of read operation）.The characteristics of reference picture 3A to Fig. 7 will be described with these and other.
Turning now to Fig. 3 A, Figure 30 0 shows and can be used for magneticss in two colored vorticities（By Fig. 1 and Fig. 2
Difference example）Between the physical principle that switches schematically illustrate.Specifically, the current state being associated with magneticss 102
Can pass through to apply bipolarity DC pulse as described below（For example, write current 302）And cut between two colored vorticities
Change.For example, electric current 302 can be perpendicular to the plane of magneticss 102 in the smaller region than magneticss 102
Flow in 304.As shown, region 304 can be circular, it is possible to be concentric with magneticss 102, but should
It need not be all such situation to be understood by.Conversely, in some schemes, region 304 need not be concentric with magneticss 102
And/or need not be with circular shape of cross section.
However, minimizing for write current 302 can be with by assuring that region 304 be that concentric mode is come with magneticss 102
Obtain.Anyway, write current 302 can generate circular oersted field（Oersted field）306, wherein, oersted field
306 field line can be parallel with the plane of magneticss 102, as shown.It is understood that the pole of write current 302
Property can determine that the direction of circular oersted field 306.For example, the polarity of write current 302 can occur on direction be it is clockwise or
Counterclockwise（And referred to herein as " oersted field chirality "）Oersted field 306.Additionally, Fig. 3 B provide electric current（For example,
Write current 302）The graphic extension 310 of pulse, the current impulse can be applied to magneticss 102 for write operation.For example,
By ImaxThe positive current pulses of sign can maintain " 1 " by producing related oersted field 306, and by-ImaxWhat is characterized is negative
Current impulse can be maintained " 0 " by producing the oersted field 306 of opposite chirality.
Therefore, if it is assumed that colored vorticity of the magneticss 102 in Fig. 1, then state region 110 is spent to be displaced to short
The left side of axle 106, can as usual be expressed as state " 0 ".In this case, flow along the direction for having gone out Fig. 1 pages
Write current 302（For example, positive current pulses）Can generate with the vortex 108 with left side1Identical chirality and have with
The vortex 108 on right side2The oersted field 306 of contrary chirality.This situation is it is meant that by produced by write current 302
Vortex of the magnetic potential to left side is to attract and be to repel to the vortex on right side.Therefore, if carried by the 302 of write current
The Zeeman energy of supply magnetic system 302（Zeeman energy）（The interactive energy being characterized as being between the magnetic field for magnetizing and applying
Amount）It is large enough to overcome the energy barrier between two colored vorticities, magneticss 102 to be switched to the stable position of the second magnetic
Shape.Therefore, when write current 302 is removed, end-state will be that state gone out by Fig. 2 examples（With on the right side of being displaced to
Colored state region 110, for example, state " 1 "）.
On the other hand, if the original state of magneticss 102 is that state that as shown in Figure 2 example goes out（With displacement
To the colored state region 110 on right side）, then system by temporarily from flower state balance remove, with provide（account for）Extra
Zeeman energy.Once however, write current 302 be removed, it is such cross energy-activation（over-energized）State can decorporate,
And therefore return to original state.Above-mentioned the characteristics of, is described in detail with reference to Fig. 4, and wherein Fig. 4 is provided and applied write current
When magneticss position shape differentiation graphic extension 400.Such as, the write current 302 for being configured to positive current pulses is produced as " 1 "
End-state（For example, the colored vorticity of Fig. 2）, but regardless of whether the first first flower vorticity of magneticss 102 is initially
" 0 " or " 1 ".
Equally, although be not explicitly illustrated, but it is also possible to be readily understood that, if system already at " 0 " shape
State, then the write current 302 for being configured to negative current pulse is invalid in terms of toggle bit shape, and if system is in " 1 "
State, the colored vorticity of magneticss 102 will switch.In either case, it will be appreciated that the amplitude of write current 302 should
It is high enough to overcome the energy barrier between two colored vorticities, but high will not arrives and reach the driving of magneticss 102
Single vorticity.It is referred to Fig. 5 and finds that the exemplary actual of single bit storage locations is implemented, wherein, the single-bit storage is single
Unit can realize the switching between two colored vorticities and/or maintain specific flower vorticity（For example, write operation）.
Referring now to Fig. 5, show that expression is write-enabled（enabled）Memory element exemplary embodiment system
500.Generally, system 500 can include magneticss 102, and the magneticss may be located at electrode（In this example, it is bottom
Electrode 502）Top on.Additionally, system 500 can also include the second element, be denoted here as contact site 504, it by
Can carrying current, nonmagnetic material composition.Contact site 504 may be located at the top of magneticss 102, it is possible to be configured to
Occupy the area less than magneticss 102.Additionally, system 500 can include top electrodes 506, the top electrodes can be with position
In the top of contact site 504.Top electrodes 506 can be isolated and and bottom electrode by insulator 508 with magneticss 102
502 isolation, insulator 508 can be made up of the material of magnetic insulation and/or electric insulation.It should be appreciated that beyond contact site
Outside 504 specific thickness, the impact of the electrode of the oersted field by produced by write current 302 306 pairs 502,506 can be suddenly
Slightly disregard.
As described above, it is easy to it is clear that the magneticss 102 of Fig. 1 and Fig. 2 can have leverage
（leverage）The bit memory cell switched between vorticity can be stably spent at two to provide, this can be characterized as using
In the write operation of bit memory cell.Especially, magneticss 102 may further include write operation component, and it can be matched somebody with somebody
Maintenance is set to about one of at least two magnetic stable states mentioned by Fig. 1 and Fig. 2.Write operation component can be gone out by the example of system 500,
And therefore referred to herein as write operation component 500.
Specifically, write operation component 500 may include the nonmagnetic conductive contact site for being configured to produce magnetic potential（Example
Such as, contact site 504）, the magnetic potential to described two vortexs 108 one of them chiralities be attract and while to described
Another vortex in two vortexs 108 is to repel.Additionally, write operation component 500 may further include and be couple to magnetic
The bottom electrode of property element 102（For example, bottom electrode 502）With the contact site for being coupled to nonmagnetic conduction（For example, contact site
504）Top electrodes（Such as top electrodes 506）.
In one or more schemes, write operation component 500 can be configured to based on applying one perpendicular to magneticss
The electric current of both 102 major axis 104 and short axle 106 flowing（For example, write current 302）To generate above-mentioned magnetic potential, wherein described
Electric current flows through the region less than the size of magneticss（For example, the region consistent with the contact site 504 of reduced size）.Should manage
Solution, although foregoing description has been directed towards write operation and carries out, but reads（For example, detection magnetic in a non-destructive way
The present bit shape of property element 102）Can be by can to sense via magnetoresistance that is any suitable known or being later discovered that
Can complete in the magnetic configuration in any region of magneticss 102.
For example, magneticss 102 may further include read operation component, and it includes being configured to sense magneticss
The magnetic resistance contact site of 102 magnetic configuration.Additionally, the read operation component may further include the bottom for being couple to magneticss 102
Portion's electrode and it is couple to the top electrodes of magnetic resistance contact site.It is appreciated that with regard to top and bottom electrode（For example, 502 and 506）
For, read operation component and write operation component 500 can be with substantially similar, but except for the difference that, contact site 504 can be connect with magnetic resistance
Contact portion replaces.Anyway, in one or more schemes, read operation component can be configured to based on for example detecting
Voltage between bottom electrode and top electrodes is distinguishing the stable position shape of the first magnetic（For example, Fig. 1）With the stable position shape of the second magnetic
（For example, Fig. 2）.Can be found that wherein Fig. 6 shows with reference to Fig. 6 with regard to the extra details of both read operation and write operation
Gone out is used for both write operation and read operation using single exemplary contact site.
Turning now to Fig. 6, there is provided the exemplary patterns of system 600 are described, it represents have for write operation and read behaviour
Make the exemplary embodiment of the memory element of the integrated magnetic resistance contact site of both.System 600 can be substantially similar to
System 500, wherein, described two systems include bottom electrode 502 and top electrodes 506 and structure around magneticss 102
Insulator 508.However, the difference between system 500 and system 600 is：The carrying current, non magnetic of system 500 connects
Contact portion 504 can be used for system 600 with the magnetoresistive stack 602 of similar size and position substituting.
Magnetoresistive stack 602 can be made up of nonmagnetic spacer layer 604 and polarization layer 606.Polarization layer 606 can have to be in
The single or multiple lift polarizer of the fixed magnetization of typical Spin Valve position shape.Therefore, the current state of magneticss 102 is non-broken
Bad property reads can be by injecting read current（The amplitude of typically its Amplitude Ratio write current 302 is little）And detect in the He of electrode 502
Corresponding voltage is completing between 506.If it is appreciated that contact site（It is in this example magnetoresistive stack 602 and/or composition
Part 604 and 606）It is concentric with magneticss 102, as shown, then between two stable colored vorticities
Average magnetic moment change and thus between change in voltage be zero.If however, short axle of the contact site along magneticss 102
106 displacements, the then change of the read voltage between two colored vorticities increases sharply, and this is further combined with Fig. 7 by specifically
It is bright.
Although referring now still to Fig. 6, turning now to Fig. 7, figure describes the view that 700 figures provide magneticss 102, and it shows
The change of the magnetic configuration detected with magnetoresistive stack 602 when magnetoresistive stack is shifted along the short axle of magneticss is gone out.Therefore, as above
Described, if magnetoresistive stack 602 is in the position concentric with magneticss 102, associated voltage readings possibly cannot be provided
A kind of effective manner is distinguishing two flower-shaped states.However, by making magnetoresistive stack 602 along short axle 106（It is in this example edge
Direction upwards or northwards）Displacement, the voltage difference between two colored vorticities can be observed.
For example, when magneticss 102 are configured in the first flower vorticity（For example, Fig. 1）When, then in magnetoresistive stack 602
Magnetizing pattern at position can be similar to by recalling（call-out）As describing in region 702, by convention its
It is defined as state " 0 ".On the other hand, when magneticss 102 are configured in the described second flower vorticity（For example, Fig. 2）When,
Then the magnetizing pattern in magnetoresistive stack 602 position can be similar to by recalling（call-out）Described in region 704 that
Sample, on the contrary by convention it is defined as state " 1 ".In the case of the two, injecting read current by magnetoresistive stack 602 will
Related voltage readings are produced, these voltage readings are differentiable with regard to two colored vorticities.
Therefore, offset along short axle 106（offset）Magnetoresistive stack 602 can provide more efficient way for read operation.
However, as earlier indicated, the minimum of write current 302 can be with by assuring that region 304 be concentric with magneticss 102 next
Obtain.Therefore, because magnetoresistive stack 602 can be convenient to read and both write operations, it is noted that by along short axle
106 skew magnetoresistive stacks 602, it may be necessary to be slightly increased write current 302 when write operation is performed（For example, relative to
The write current needed when magnetoresistive stack 602 is concentric with magneticss 102）.Additionally, in position shape as shown in Figure 7（For example,
Magnetoresistive stack 602 offsets along short axle 106）, spin transfer torque can play a role during given write operation.However,
It can be to ignore that driving is contemplated for this impact effect in the range of the electric current needed for the write operation of high density storage device
Disregard.
In accordance with the above, it should be appreciated that therefore magneticss 102 can be used all or part of read/write components
It is extended, can be read with building（For example, the non-damaged data of the current state of magneticss 102）And write（For example,
Maintain a specific state of magneticss 102）Single bit storage locations.Specifically, read/write components can include being coupled to
The non-magnetic spacer thing of magneticss 102（For example, nonmagnetic spacer layers 604）Be coupled to the non-magnetic spacer thing, tool
There are the monolayer polarizer or multilamellar polarizer of fixed magnetization（For example, polarization layer 606）.Additionally, read/write components can be wrapped further
Include the bottom electrode for being couple to magneticss 102（For example, bottom electrode 502）With the top electrodes for being couple to polarizer（For example,
Top electrodes 506）.
In one or more schemes, read/write components can be configured to based on the write current for being applied through read/write element
302 and produce magnetic potential, wherein the write current 302 be respectively perpendicular to magneticss 102 both major axis 104 and short axle 106 stream
It is dynamic（For example, the plane of into and out magneticss 102）.Additionally, write current 302 can be applied by than magneticss 302
The little region of size, to maintain one of described at least two magnetic stable state.Further, write current 302 can flow through magnetic
Element 102 deviates from the region of short axle 106, and the region can be based on the position of magnetoresistive stack 602 and set up.With regard to read operation,
Read/write components can be configured to according to the read/write unit detected when injecting read current between top electrodes and bottom electrode
Voltage on part distinguishing at least two magnetic stable state, wherein, the read current is typically smaller than write current 302, to avoid dimension
Hold specific state in magneticss 102.
Additionally, in one or more schemes, magneticss 102 are together with the related He of magnetoresistive stack 602（Optionally）Bottom
Portion's electrode 502 and top electrodes 506 may be constructed single-bit memory element, and the magneticss 102 can be with multiple extra magnetic
Property element and correlation component arrange together, be arranged to single bit storage locations array.Such memory cell array can be with
Store based on ferromagnetic unit described herein and related principle rather than based on usual electric charge such as in conventional memory,
To provide highdensity solid-state memory.Therefore, disclosed memorizer can be effectively combined the typical high number of magnetic hard-disk
According to density, but also have dynamic random access memory typical typically non-volatile with flash memory at high speed.With Fig. 8 and Fig. 9
Relatively, there is provided two example memory arrays.Specifically, Fig. 8 is related to 1TIC（One transistor, one unit）Framework,
And Fig. 9 is related to without transistor architecture.
Turning now to Fig. 8, system 800 shows the core that single bit storage locations are integrated into one unit of a transistor
Embodiment in piece framework.As described in above substantially, single bit storage locations can be with magneticss 102 and magnetoresistive stack
602 are characterized, and referred to hereafter as bit cell 802.Bit cell 802 may be located at the bottom electrode 804 of patterning
Top, it can be arranged line by line throughout whole array, and combination bottom electrode 502 that can be as described by basic is acting as
With.In turn, the bottom electrode 804 of patterning can be located at transistor 806（For example, that for each bit cell 802）
Top, wherein, the bottom electrode 804 of the patterning can be connected to ground connection 808 by the output port of transistor 806.
Additionally, wordline 810 can enable a row transistor 806, all bit cells 802 on the row are connected to into ground connection 808.This
Outward, bit line 812 can connect string bit cell 802, and can be used as public top electrodes（For example, such as with top
Electrode 506 is about that described）, for all of bit cell 802 in the row.However, on only selected bit line 812
The bit cell 802 for enabling will to be based on selected row addressed.
With reference now to Fig. 9, system 900 shows that single bit storage locations are integrated into the chip architecture without transistor by one
Exemplary embodiment.Obviously, system 900 may be largely analogous to the correlated characteristic of system 800, need not except system 900
Outside transistor 806.If conversely, using without transistor architecture, bit line 812 can serve as string bit cell 802
Public electrode, and wordline 810 can serve as the public electrode of a line bit cell 802, while bit cell 802 is sandwiched in
Intersection, therefore, can be based on unique column-row position separately addressed.
Figure 10-Figure 12 describes the various methods of one or more embodiments according to this paper.Although for the purpose of simplifying the description
Purpose, these methods are shown and described as a series of action, but it is understood that, these embodiments need not be limited
In the order of action, this is because some actions may occur in a different order and/or be illustrated and described herein other
Action occurs simultaneously.For example, one of ordinary skill in the art will understand and appreciate that a method is alternatively represented as all
Such as a series of related states or event in state diagram.Additionally, and the action shown in not all is existing according to various for implementing
The method of embodiment is required.Further, it should be appreciated that hereinafter the method in disclosed and whole this specification can be with
To be stored in a product, with perform suitable hardware necessary to the action and/or suitable equipment and just
In this kind of method is transmitted and computer is transferred to.
With reference now to Figure 10, there is provided for the illustrative methods 1000 for making magneticss magnetic stable.However, in the side of carrying out
Before the discussion of method 1000, it should be appreciated that can be used for bit cell（Than this bit cell as described herein）Magnetic
The initial magnetization state of property element is not necessarily colored vortex position shape.For example, it is contemplated that magneticss from the film patterning for being grown and
The situation of formation.In this case, magneticss magnetic state it could be likely that：Wherein, it is mean magnetizing easy along face
Magnetized axle is present, major axis of the axle corresponding to magneticss.Additionally, for the aspect ratio and/or thickness of some magneticss
Degree, flower vorticity is probably relative, is not the minimum system of absolute double degeneracy energy.
Under any circumstance, the field of the saturation magnetization of film is not less than by outside applying face, amplitude, magneticss can
To be brought into colored vortex position shape.Alternately, only in the case where flower vorticity is absolute energy minimum, initialization can lead to
Cross and be heated to mode more than its Curie temperature to obtain by system.If more than one magneticss are aggregated is arranged in one
To form storage device in array, then all of magneticss all will be arranged to spend one of vorticity simultaneously.It is such first
Beginning process generally only needs to carry out once, and assumes the array of bit cells quilt in course of normal operation as described herein
Suitably mask if magnetic field, can hereafter be held permanently in colored vorticity.
Accordingly, at reference 1002, the original state of elongated conductive magneticss, the magnetic can be checked
Element has the geometry for allowing double, energy degeneracy magnetic configuration.Based on this inspection, in reference 1004
Place, can decision making can.Specifically, the stable position shape that can determine that desired magneticss indicates whether that absolute energy is minimum
Or relative energy is minimum.If it is minimum that the stable position shape of desired magneticss is not offered as absolute energy（And/or, on the contrary
Ground represents that relative energy is minimum）, then the method 1000 advance at reference 1006.On the other hand, if desired magnetic
Property element stable position shape represent that absolute energy is minimum, then method 1000 is advanced at reference 1008.
At reference 1006, it has been determined that the stable position shape of desired magneticss does not represent absolute energy most
It is little and/or to represent relative energy minimum.Therefore, it can apply vertical magnetic field on the magneticss, to initialize magneticss.
On the other hand, at reference 1008, it has been determined that the stable position shape of desired magneticss represents absolute energy really
It is minimum.Therefore, in this case, in order to initialize magneticss, the magneticss can be heated to be more than or equal to and be somebody's turn to do
The temperature of the Curie temperature of magneticss.As used herein and well known in the prior art, Curie temperature is based on involved
And material（For example, ferromagnetic material）Composition and change, and it is reversible to be related to one（reversible）Temperature, higher than should
The material is changed into paramagnetism during irreversible temperature so that the material in paramagnetic state is only in the case where having the outside magnetic field for applying
It is only magnetic.
Regardless of the path advanced, no matter via reference 1006 or via reference marker 1008, magnetic unit
Part is at present also regarded as being initialized as so that two stable colored vorticities of magnetic are for magneticss are all possible.Cause
This, method 1000 just can terminate.
With reference to Figure 11, the illustrative methods 1100 for maintaining specific magnetic stable state for suitable magneticss are depicted.
Generally, at reference 1102, a magnetic potential can be produced, the magnetic potential is to attract to a vortex with the first chirality
And to the second chirality a vortex be repel, wherein first-hand the levying property is contrary with the second chirality.
Therefore, at reference 1104, the magnetic potential can be applied to elongated conductive magneticss, wherein the magnetic is first
Part has the contrary vortex of two chiralities and with the geometry of the magnetic configuration for allowing double energy degeneracy.
In accordance with the above, because magneticss can include two vortexs, each has different chiralities（Example
Such as, clockwise with counterclockwise）, at reference 1102 produce and be applied to magneticss at reference 1104
Magnetic potential can attract it is described one of be vortexed, and repel another vortex.Therefore, will be maintained based on the magnetic potential applied to magneticss
One of two stable position shapes.For example, if magneticss are not at the position shape being just maintained, position shape will be switched to the shape
State.But, if magneticss are already at the position shape being just maintained, even if remove magnetic potential also will not change.Therefore,
Maintain one of stable position shape of magnetic or the write operation of another bit cell that can serve as being associated with magneticss.
Turning now to Figure 12, illustrative methods 1200 are shown, remain specific with for suitable magneticss for providing
The relevant additional features of magnetic stable state or scheme.Generally, at reference 1202, can adopt one perpendicular to magneticss length
The electric current of both axle and short axle flowing（For example, write current）For producing the institute of reference 1102 and 1104 for combining accompanying drawing 11
The magnetic potential of detailed description.
Next will describe, at reference 1204, electric current can be applied little by the size than magneticss
Region, for producing magnetic potential.Additionally, at reference 1206, the electric current can be applied by magneticss along magnetic
Property element short axle skew position.The component drift that the short axle along magneticss transmits electric current is set to cause necessary slightly higher
Write current, and more effective read operation can be caused to be used.
The example including various embodiments being described above.Can not possibly describe of course for the purpose of description embodiment
The every kind of possible combination of component or method, but those skilled in the art will realize that it is many it is further combination and
Displacement is possible.Therefore, detailed description is intended to the institute in the spirit and scope of appending claims
There are these replacement, modification and modifications.
Particularly, for the various functions by performed by above-mentioned part, equipment, circuit, system etc., unless otherwise stated or
Can understand from context and learn, for describing the term of this component（Including the reference to " device "）It is intended to corresponding to execution
The specific function of described component（For example, it is functionally equivalent）Any component, even if being not equal in structure disclosed
Perform the structure of the exemplary arrangement shown function herein of these embodiments.In this respect, it will also be appreciated that, implement
Example includes system, while also including having for performing the various actions of method and/or the computer executable instructions of event
Computer-readable medium.
Although additionally, specific feature may already in connection with several embodiments in it is only a kind of and be disclosed, but this
The feature of sample can with to any given or specifically one in the possibly desired and favourable other embodiment of application
Or multiple further features are combined together.Further, it is used to describe in detail in term " including ", "comprising" and its modification
In the degree of book or claims, what these terms were intended to be expressed in the way of similar to term "comprising" is pardon.
Claims (23)
1. a kind of system with least two magnetic stable states, including：
The magneticss of elongated electric conductivity have the geometry of the magnetic configuration of the energy degeneracy for supporting double, the magnetic unit
The geometry of part is configured to ellipse, and the magneticss include：
First vortex；
Second vortex；
It is eccentric in the colored state region of the short axle of the magneticss；
Wherein, first vortex, second vortex and the colored state region are located in the stable position of the first magnetic
Shape；
Magnetic potential produced by write current of the system by applying perpendicular to magneticss place plane, described at least two
Switch between magnetic stable state.
2. system according to claim 1, wherein, first vortex and second vortex are located at the magnetic
A step is gone forward side by side on the major axis of element in the opposite side of the short axle.
3. system according to claim 1, wherein, the chirality of first vortex with second vortex
The contrary direction of chirality rotates, wherein, chirality is related to magnetized direction of rotation in the face of vortex.
4. system according to claim 1, wherein, the colored state region using it is average be perpendicularly oriented to it is stable in magnetic
Magnetize to characterize in the face of the major axis of the magneticss of position shape.
5. system according to claim 1, wherein, the magneticss are configured to make first vortex, described
Second vortex and the colored state region are displaced to energy along the major axis of the magneticss, and to be equal to first magnetic steady
The stable position shape of second magnetic of positioning shape.
6. system according to claim 1, also writes behaviour including be configured to maintain one of at least two magnetic stable state
Make component.
7. system according to claim 6, wherein, the write operation component includes：(1) nonmagnetic conductive contact
Portion, is configured to produce magnetic potential, chirality of the magnetic potential to one of first vortex and second vortex
Be attract and while to another the chirality in first vortex and second vortex be repel；(2)
Bottom electrode, is coupled to the magneticss；And (3) top electrodes, it is coupled to the nonmagnetic conductive contact site.
8. system according to claim 7, wherein, the write operation component is configured to based on the applying of such electric current
And magnetic potential is produced, the electric current is flow through than the magneticss perpendicular to the major axis of the magneticss and both short axle
The little region of size.
9. system according to claim 1, also including read operation component, the read operation component includes：(1) magnetic resistance contact
Portion, is configured to sense the magnetic configuration of the magneticss；(2) bottom electrode, is coupled to the magneticss；And (3) top
Portion's electrode, is coupled to the magnetic resistance contact site.
10. system according to claim 9, wherein, the read operation component is configured to based on being detected described
To distinguish, first magnetic stablizes position shape to voltage between bottom electrode and the top electrodes and the second magnetic stablizes position shape.
11. systems according to claim 1, also including read/write components, the read/write components include：(1) non magnetic
Parting, is coupled to the magneticss；(2) single or multiple lift has the polarizer of fixed magnetization, is coupled to described non magnetic
Parting；(3) bottom electrode, is coupled to the magneticss；(4) top electrodes, are coupled to the polarizer.
12. systems according to claim 11, wherein, the read/write components are configured to based in the read/write components
Write current applying and produce magnetic potential, to maintain one of described at least two magnetic stable state, wherein the write current perpendicular to
The major axis of the magneticss and the region less than the size of the magneticss is flow through both short axle.
13. systems according to claim 12, wherein, the read/write components are configured to be based in the bottom electrode
The voltage in the read/write components detected when the read current less than the write current is injected and the top electrodes between,
To distinguish at least two magnetic stable state.
14. systems according to claim 1, also including multiple extra magneticss, it is organized into depositing for single-bit
Storage unit array.
15. systems according to claim 14, wherein, the memory cell array of the single-bit also includes being configured to fortune
Carry each circuit of at least one of read current or write current.
16. systems according to claim 15, wherein, the memory cell array is according to one unit of a transistor
(1T1C) framework and be configured.
17. systems according to claim 15, wherein, the memory cell array is matched somebody with somebody according to the framework without transistor
Put.
18. are used to make the stable method of magneticss magnetic, the magneticss have the magnetic configuration of the energy degeneracy for supporting double
Geometry, the geometry is configured to ellipse, including the first vortex, the second vortex, is eccentric in the magneticss
Short axle colored state region, the method includes：
The original state of elongated conductive magneticss is checked, the magneticss have allows double energy degeneracy
The geometry of magnetic configuration；
Judge that given stable position shape indicates whether that absolute energy is minimum or relative energy is minimum；And
When given stable position shape represents that relative energy is minimum, apply vertical magnetic field to the magneticss, or if
Given stable position shape represents that absolute energy is minimum, then the magneticss are heated up to temperature more than or equal to the magnetic
The Curie temperature of element.
19. are used for the method to magneticss maintenance specific magnetic stable state, including：
Magnetic potential is produced using an electric current flowed perpendicular to both the major axis and short axle of the magneticss, the magnetic potential is to tool
The vortex for having the first chirality is to attract and the vortex to having second chirality contrary with first chirality
It is to repel；
The magnetic potential is applied to an elongated conductive magneticss, wherein the magneticss have two chiralities contrary
Vortex and the geometry with the magnetic configuration for allowing double energy degeneracy, the wherein geometry is configured to
Ellipse, every kind of magnetic configuration is magnetic stability and the colored state region with the short axle for being eccentric in the magneticss.
20. methods according to claim 19, also include：Apply the electric current by less than the size of the magneticss
Region, for producing the magnetic potential.
21. methods according to claim 20, also include：Apply the electric current inclined along short axle by the magneticss
The position of shifting.
A kind of 22. systems for providing nonvolatile memory based on magnetic configuration, including：
For coupling the device of elongated conductive magnet unit array, at least one of magnet unit array magnetic
Unit is arranged according to the geometry of the magnetic configuration for allowing double energy degeneracy, and the geometry is configured to ellipse
Circle, wherein every kind of shape is magnetic stability and with the flower of the short axle eccentric setting relative at least one magnet unit
State region；
Reading device, the current state of one or more magnet units being included in for sensing included in the array, with
And
Writing station, is be included in the array perpendicular to the electric current of magnet unit place plane for applying
Or multiple magnet units are maintained and any one consistent magnetic stable state in the magnetic configuration of double energy degeneracy.
23. systems according to claim 22, are also included for using the device of single magnetic resistance contact site, the single magnetic
Resistance contact site is used for both the reading device being associated with the single magnet unit being included in the array and writing station.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2010/001323 WO2012027861A1 (en) | 2010-08-31 | 2010-08-31 | Magnetic memory cell |
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| Publication Number | Publication Date |
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| CN103069493A CN103069493A (en) | 2013-04-24 |
| CN103069493B true CN103069493B (en) | 2017-04-12 |
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| US (1) | US9224941B2 (en) |
| CN (1) | CN103069493B (en) |
| WO (1) | WO2012027861A1 (en) |
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| US8854871B1 (en) * | 2012-11-19 | 2014-10-07 | U.S. Department Of Energy | Dynamic control of spin states in interacting magnetic elements |
| US9779770B1 (en) | 2015-06-04 | 2017-10-03 | Seagate Technology Llc | 3DMR media with multiple write field levels |
| US10739261B2 (en) * | 2018-04-30 | 2020-08-11 | Purdue Research Foundation | Surface-plasmon opto-magnetic field enhancement for all-optical magnetization switching |
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| US9224941B2 (en) | 2015-12-29 |
| CN103069493A (en) | 2013-04-24 |
| US20130121068A1 (en) | 2013-05-16 |
| WO2012027861A1 (en) | 2012-03-08 |
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