CN103064994A - Diode artificial circuit model - Google Patents

Diode artificial circuit model Download PDF

Info

Publication number
CN103064994A
CN103064994A CN2011103220423A CN201110322042A CN103064994A CN 103064994 A CN103064994 A CN 103064994A CN 2011103220423 A CN2011103220423 A CN 2011103220423A CN 201110322042 A CN201110322042 A CN 201110322042A CN 103064994 A CN103064994 A CN 103064994A
Authority
CN
China
Prior art keywords
diode
current
voltage
model
circuit model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011103220423A
Other languages
Chinese (zh)
Other versions
CN103064994B (en
Inventor
王正楠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huahong Grace Semiconductor Manufacturing Corp
Original Assignee
Shanghai Hua Hong NEC Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Hua Hong NEC Electronics Co Ltd filed Critical Shanghai Hua Hong NEC Electronics Co Ltd
Priority to CN201110322042.3A priority Critical patent/CN103064994B/en
Publication of CN103064994A publication Critical patent/CN103064994A/en
Application granted granted Critical
Publication of CN103064994B publication Critical patent/CN103064994B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

The invention discloses a diode artificial circuit model which comprises a forward direction diode model, and further comprises a voltage-controlled current supply and a parasitic resistor, wherein the voltage-controlled current supply and the parasitic resistor are connected between an end P and an end N of the diode model in series, reverse breakdown current of the forward direction diode model is zero, and the current valve of the voltage-controlled current supply is as follows. According to the diode artificial circuit model, model precision and flexibility of reverse characteristics of the diode are improved, both good registration accuracy of forward working current of the diode and good registration accuracy of backward breakdown current of the diode are achieved.

Description

The diode simulation circuit model
Technical field
The present invention relates to the semiconductor design technology, particularly a kind of diode simulation circuit model.
Background technology
The HSPICE emulator is acknowledged as " golden standard " in accurate circuit simulation field, and can provide the MOS device model that authenticated through foundries emulation by first-class emulation and analytical algorithm, is one of fastest, the circuit emulator of being trusted most.
In the HSPICE emulator of current semiconductor design owner stream, it is as follows that the electric current of conventional diode (diode) device simulation model is described formula:
Diode forward working current id is:
id = ISeff * ( e Vd N * Vt - 1 ) Formula 1;
Diode reverse breakdown current i d1 is:
id 1 = ISeff * ( e Vd N * Vt - 1 ) - ISeff * ( e - ( Vd + BVeff N * Vt ) - 1 ) Formula 2;
In formula 1 and the formula 2, ISeff is the watt current coefficient, and Vd is extraneous bias voltage, and N is the correction factor of current index item, and Vt is physical constant, and Bveff is the voltage breakdown of diode.
Can find out from formula 1 and formula 2, all adopt identical correction factor " N " when describing the exponential term of the forward current of diode and reverse breakdown current in the emulator, this is that a kind of model formation of more satisfactoryization is described.But in the actual conditions, Zener diode (zener diode) for example, the i-v curve that test obtains as shown in Figure 1, what the figure dotted line represented is the diode current voltage curve that actual measurement obtains, and the solid line representative is the i-v curve that model emulation obtains, wherein the x axle is diode two ends scanning voltages, and the y axle is measuring current, and scale is Log (A).Figure irises out in the left side part and is reverse breakdown current models fitting part, the right side is irised out part and is forward current models fitting part, can see the limitation owing to model formation in the emulator, model can't be aligned in both sides electric current slope under the logarithmic coordinate simultaneously, we can see that the left side breakdown current sharply rises with reverse voltage, the right side forward current increases with forward voltage, but about two slope of a curves be different, the slope of breakdown current more " precipitous " is a little.When models fitting, because the restriction of formula supposes that the Iseff value is fixing, model can only be adjusted by parameter " N " both slopes, and the result certainly will be for causing the sacrifice of some precision.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of diode simulation circuit model, has improved model accuracy and the dirigibility of diode reverse characteristic, can both obtain preferably alignment precision at forward working current and the reverse breakdown current of diode.
For solving the problems of the technologies described above, diode simulation circuit model of the present invention comprises a forward diode model, also comprises a Voltage-controlled Current Source, a dead resistance;
Described Voltage-controlled Current Source is serially connected between the P end and N end of described forward diode model with described dead resistance;
Described forward diode model, reverse breakdown current are zero;
Described Voltage-controlled Current Source, its current value is:
cur = jrev * exp ( - ( V A + Bvrev ) nrev * k * t / q )
Wherein, cur is the Voltage-controlled Current Source current value, and jrev is the reverse breakdown current coefficient, and Bvrev is the breakdown reverse voltage point, and nrev is the exponential term correction factor of reverse breakdown current, V AFor Voltage-controlled Current Source with dead resistance tie point voltage, t is environment temperature, k is Boltzmann constant, q is the electric charge constant.
Described forward diode model, the forward working current is:
id = ISeff * ( e Vd N * Vt - 1 )
Wherein, id is the forward working current, and ISeff is the watt current coefficient, and Vd is extraneous bias voltage, and N is the correction factor of current index item, and Vt is physical constant.
Diode simulation circuit model of the present invention, outside forward diode model dio1, add virtual device Voltage-controlled Current Source gdio and dead resistance Rx, Voltage-controlled Current Source gdio and dead resistance Rx are serially connected between the P end and N end of forward diode model dio1, forward diode model dio1 reverse breakdown current is zero, has guaranteed that forward diode model dio1 can not work to the emulation of the reverse breakdown current of diode; Described Voltage-controlled Current Source gdio, when carrying out the diode forward operation simulation, the current value cur of Voltage-controlled Current Source gdio is close to 0, forward working current emulation to diode can not work, and guaranteed that forward diode model dio1 normally plays a role to the forward working current emulation of diode.Diode simulation circuit model of the present invention, because the formula that diode forward working current and reverse breakdown current are simulated separates, exponential term correction factor in two formula also separates, and has changed the limitation of common diode simulation circuit model.Diode simulation circuit model of the present invention can by the match to measured data, obtain final accurate model, the model accuracy and the dirigibility that have improved the diode reverse characteristic.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment.
The comparison diagram of Fig. 1 diode current voltage curve that to be the i-v curve that obtains of existing diode simulation circuit model emulation obtain with actual measurement;
Fig. 2 is diode simulation circuit model one embodiment schematic diagram of the present invention;
The comparison diagram of Fig. 3 diode current voltage curve that to be the i-v curve that obtains of diode simulation circuit model of the present invention emulation obtain with actual measurement.
Embodiment
Diode simulation circuit model one embodiment of the present invention as shown in Figure 2, comprise the first forward diode model dio1, a Voltage-controlled Current Source gdio, a dead resistance Rx, described Voltage-controlled Current Source gdio is serially connected between the P end and N end of described forward diode model dio1 with described dead resistance Rx;
Described forward diode model dio1, reverse breakdown current are zero, and the forward working current is:
id = ISeff * ( e Vd N * Vt - 1 ) Formula 3;
Wherein, id is the forward working current, and ISeff is the watt current coefficient, and Vd is extraneous bias voltage, and N is the correction factor of current index item, and Vt is physical constant;
Described Voltage-controlled Current Source gdio, its current value is:
cur = jrev * exp ( - ( V A + Bvrev ) nrev * k * t / q ) Formula 4;
Wherein, cur is the Voltage-controlled Current Source current value, and jrev is the reverse breakdown current coefficient, and Bvrev is the breakdown reverse voltage point, and nrev is the exponential term correction factor of reverse breakdown current, V AFor Voltage-controlled Current Source gdio with dead resistance Rx tie point A voltage, t is environment temperature, k is Boltzmann constant, q is the electric charge constant.
One preferred embodiment, t is 25 ℃, and Rx is 40 ohm, and Bvrev is 5.45V, and jrev is 1E-14, nrev is 0.55.
Diode simulation circuit model of the present invention, outside forward diode model dio1, add virtual device Voltage-controlled Current Source gdio and dead resistance Rx, Voltage-controlled Current Source gdio and dead resistance Rx are serially connected between the P end and N end of forward diode model dio1, forward diode model dio1 reverse breakdown current is zero, has guaranteed that forward diode model dio1 can not work to the emulation of the reverse breakdown current of diode; Described Voltage-controlled Current Source gdio, when carrying out the diode forward operation simulation, the current value cur of Voltage-controlled Current Source gdio is close to 0, forward working current emulation to diode can not work, and guaranteed that forward diode model dio1 normally plays a role to the forward working current emulation of diode.Diode simulation circuit model of the present invention, because the formula that diode forward working current and reverse breakdown current are simulated separates, exponential term correction factor in two formula also separates, and has changed the limitation of common diode simulation circuit model.Diode simulation circuit model of the present invention can by the match to measured data, obtain final accurate model, the model accuracy and the dirigibility that have improved the diode reverse characteristic.
Described Voltage-controlled Current Source gdio, its current value cur is affected by the exponential term correction factor nrev of reverse breakdown current coefficient jrev, breakdown reverse voltage point Bvrev, reverse breakdown current, the exponential term correction factor nrev of reverse breakdown current coefficient jrev, breakdown reverse voltage point Bvrev, reverse breakdown current and dead resistance Rx are the adjustable parameters that can be used for match, make diode simulation circuit model and diode measured data carry out match by adjusting these parameters, can access the model that a cover can accurately be described diode characteristic.Adopt diode simulation circuit model of the present invention to device simulation with the comparison diagram of device actual measurement as shown in Figure 3, what the figure dotted line represented is the diode current voltage curve that actual measurement obtains, and solid line representative is the i-v curve that diode simulation circuit model of the present invention emulation obtains, and can see that diode simulation circuit model of the present invention can both obtain preferably alignment precision at forward working current and the reverse breakdown current of diode.In addition, diode simulation circuit model of the present invention is owing to having added the dead resistance correction term, and model has also obtained very large improvement in reverse breakdown current saturation region precision.

Claims (7)

1. a diode simulation circuit model is characterized in that, comprises a forward diode model, a Voltage-controlled Current Source, a dead resistance;
Described Voltage-controlled Current Source is serially connected between the P end and N end of described forward diode model with described dead resistance;
Described forward diode model, reverse breakdown current are zero;
Described Voltage-controlled Current Source, its current value is:
cur = jrev * exp ( - ( V A + Bvrev ) nrev * k * t / q ) ;
Wherein, cur is the Voltage-controlled Current Source current value, and jrev is the reverse breakdown current coefficient, and Bvrev is the breakdown reverse voltage point, and nrev is the exponential term correction factor of reverse breakdown current, V AFor Voltage-controlled Current Source with dead resistance tie point voltage, t is environment temperature, k is Boltzmann constant, q is the electric charge constant.
2. diode simulation circuit model according to claim 1 is characterized in that, described forward diode model, and the forward working current is:
id = ISeff * ( e Vd N * Vt - 1 ) ;
Wherein, id is the forward working current, and ISeff is the watt current coefficient, and Vd is extraneous bias voltage, and N is the correction factor of current index item, and Vt is physical constant.
3. diode simulation circuit model according to claim 1 is characterized in that, t is 25 ℃.
4. diode simulation circuit model according to claim 1 is characterized in that, Rx is 40 ohm.
5. diode simulation circuit model according to claim 1 is characterized in that, Bvrev is 5.45V.
6. diode simulation circuit model according to claim 1 is characterized in that, jrev is 1E-14.
7. diode simulation circuit model according to claim 1 is characterized in that, nrev is 0.55.
CN201110322042.3A 2011-10-21 2011-10-21 Diode artificial circuit model Active CN103064994B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110322042.3A CN103064994B (en) 2011-10-21 2011-10-21 Diode artificial circuit model

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110322042.3A CN103064994B (en) 2011-10-21 2011-10-21 Diode artificial circuit model

Publications (2)

Publication Number Publication Date
CN103064994A true CN103064994A (en) 2013-04-24
CN103064994B CN103064994B (en) 2016-04-13

Family

ID=48107624

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110322042.3A Active CN103064994B (en) 2011-10-21 2011-10-21 Diode artificial circuit model

Country Status (1)

Country Link
CN (1) CN103064994B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105389421A (en) * 2015-10-21 2016-03-09 国网智能电网研究院 Simulation model of silicon carbide Schottky diode C5D50065D
CN105512353A (en) * 2014-10-17 2016-04-20 中芯国际集成电路制造(上海)有限公司 Modelling method and model circuit for grid-control diode
CN105842599A (en) * 2015-01-12 2016-08-10 中芯国际集成电路制造(上海)有限公司 Modeling method and circuit for Zener diode
CN111090938A (en) * 2019-12-16 2020-05-01 南京九芯电子科技有限公司 OLED sub-circuit model

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101201851A (en) * 2006-12-13 2008-06-18 上海华虹Nec电子有限公司 Method for modeling diode multiple simulator format SPICE model

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101201851A (en) * 2006-12-13 2008-06-18 上海华虹Nec电子有限公司 Method for modeling diode multiple simulator format SPICE model

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105512353A (en) * 2014-10-17 2016-04-20 中芯国际集成电路制造(上海)有限公司 Modelling method and model circuit for grid-control diode
CN105842599A (en) * 2015-01-12 2016-08-10 中芯国际集成电路制造(上海)有限公司 Modeling method and circuit for Zener diode
CN105842599B (en) * 2015-01-12 2018-11-16 中芯国际集成电路制造(上海)有限公司 A kind of modeling method and precircuit for zener diode
CN105389421A (en) * 2015-10-21 2016-03-09 国网智能电网研究院 Simulation model of silicon carbide Schottky diode C5D50065D
CN105389421B (en) * 2015-10-21 2018-11-02 国网智能电网研究院 A kind of simulation model of SiC schottky diode C5D50065D
CN111090938A (en) * 2019-12-16 2020-05-01 南京九芯电子科技有限公司 OLED sub-circuit model

Also Published As

Publication number Publication date
CN103064994B (en) 2016-04-13

Similar Documents

Publication Publication Date Title
Liu et al. RF MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model
EP3215860B1 (en) Systems and methods of measuring and determining noise parameters
CN103064994B (en) Diode artificial circuit model
CN108062442A (en) A kind of AlGaN/GaN HEMT microwave power devices small-signal intrinsic parameters extracting method
CN104698276A (en) Resistor verifying system
CN104102836A (en) Method for quickly estimating robust state of power system
CN110750944A (en) Simulation method and device and readable storage medium
Cha et al. Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements
Avolio et al. Waveforms-only based nonlinear de-embedding in active devices
CN105302943A (en) Bias voltage dominant relevance mismatch model and extracting method
CN108153926A (en) The method for establishing analytic modell analytical model of semiconductor devices based on empirical equation
CN106951586B (en) Modeling method of radio frequency MOS device considering temperature effect
KR101363259B1 (en) Apparatus for extracting resistance, method for extracting resistance and computer-readable recording medium
WO2019146460A1 (en) Method for measuring current-voltage characteristic
CN103913713A (en) Fast calibration method of microwave high power passive distributor
Jarnda Genetic algorithm based extraction method for distributed small-signal model of GaN HEMTs
CN109933897A (en) The modeling method and model of the big signal PSPICE model of GaN MIS-HEMT
CN102799697A (en) Low-temperature CMOS (Complementary Metal-Oxide-Semiconductor Transistor) modeling method
WO2020209110A1 (en) Device parameter measurement method
CN101459093A (en) Method for verifying asymmetric high voltage field effect tube drifting region resistor
Dilli et al. An enhanced specialized SiC power MOSFET simulation system
CN102890736B (en) Measuring method for resistance of three-terminal resistors used for integrated circuits
JP2011204004A (en) Spice model parameter output apparatus and output method
Boglione A novel extraction procedure to determine the noise parameters of on-wafer devices
JP2009253218A (en) Circuit parameter extraction apparatus, and circuit parameter extraction method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING

Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI

Effective date: 20140108

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI

TA01 Transfer of patent application right

Effective date of registration: 20140108

Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399

Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Address before: 201206 No. 1188, Dongchuan Road, Shanghai, Pudong New Area

Applicant before: Shanghai Huahong NEC Electronics Co., Ltd.

C14 Grant of patent or utility model
GR01 Patent grant