CN103064759B - The method of data restore and device - Google Patents
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- CN103064759B CN103064759B CN201210551743.9A CN201210551743A CN103064759B CN 103064759 B CN103064759 B CN 103064759B CN 201210551743 A CN201210551743 A CN 201210551743A CN 103064759 B CN103064759 B CN 103064759B
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Abstract
The invention discloses a kind of method and device of data restore, belong to the communications field.Described method comprises: when the first memory node breaks down, set up temporary storage node, and the first newly-increased data produced for the first interval time write the second memory node and temporary storage node respectively; When the second memory node breaks down, by the first newly-increased data write the 3rd memory node stored in temporary storage node.The present invention is by when the first memory node breaks down, set up temporary storage node, and the second memory node that the first memory node is broken down to break down between the first newly-increased data write temporary storage node of producing the first interval time, with when the second memory node breaks down, make no matter whether to repair the second memory node, first newly-increased data write the 3rd memory node that all can will store in temporary storage node, thus improve the probability of data restore.
Description
Technical field
The present invention relates to the communications field, particularly a kind of method of data restore and device.
Background technology
Along with the development of the communication technology, the data such as increasing video, voice, text need to be stored.The storage mode of conventional distributed memory system is that data are divided into multiple data trnascription, be stored in different memory nodes dispersedly, thus when ensureing that wherein certain memory node breaks down, the upper-layer service of system can also obtain required data on other memory node.But, when multiple memory node all breaks down, will loss of data be caused thus affect carrying out of upper-layer service, therefore, needing to carry out data restore to ensure system worked well.
The method that prior art carries out data restore is: in the first memory node and the second memory node, store identical former data, when the first memory node breaks down, system needs a detection time just can be set up the 3rd memory node and carry out alternative first memory node, so the write within detection time first newly-increased data are only stored in the second memory node; If the second memory node breaks down or after setting up the 3rd memory node, the former data in the second memory node and the first newly-increased data is backuped to the second memory node in the process of the 3rd memory node and breaks down when also not setting up the 3rd memory node, then the second memory node is performed and repair operation, such as plug or reset etc.; If repair successfully, second memory node can reconnect to system, then the former data in the second memory node and the first newly-increased data are all backuped in the 3rd memory node, or, former data in second memory node and the first newly-increased data are continued to backup in the 3rd memory node from the place that backup is interrupted, thus realizes data restore.
Realizing in process of the present invention, inventor finds that prior art at least exists following problem:
In prior art, successful probability when reparation operates is performed to the second memory node lower, cause the successful probability of data restore lower, if reparation operation failure, then loss of data can be caused, now, the memory device of the first memory node and the second memory node can only be transported to specialized maintenance place and carry out data restore, data restore process is complicated, length consuming time.
Summary of the invention
In order to solve the problem of prior art, embodiments provide a kind of method and device of data restore.Described technical scheme is as follows:
First aspect, provides a kind of method of data restore, and described method comprises:
When the first memory node breaks down, set up temporary storage node, and the first newly-increased data produced for the first interval time write the second memory node and described temporary storage node respectively;
When described second memory node breaks down, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node;
Wherein, identical former data are stored in described second memory node and described first memory node, described first interval time be described first memory node break down described second memory node break down between time, described 3rd memory node is set up after the detection time that described first memory node has broken down, described detection time is after described temporary storage node is set up, and determines whether described first memory node can recover the waiting time of normal work automatically.
In the first possible implementation of first aspect, described when described second memory node breaks down, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node, comprising:
When described second memory node breaks down, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node; Or,
When described second memory node breaks down, repair described second memory node, when described second memory node reparation success, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described second memory node and described temporary storage node; When described second memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node.
In conjunction with the first possible implementation of first aspect, in the implementation that the second of first aspect is possible, described when described second memory node reparation success, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described second memory node and described temporary storage node, also comprise:
Produce within the second interval time second newly-increased data are write described second memory node, described 3rd memory node and described temporary storage node respectively; Or,
Produce within described second interval time second newly-increased data are write described second memory node and described 3rd memory node respectively, and after described 3rd memory node of the will store in described temporary storage node described first newly-increased data write, delete described temporary storage node;
Wherein, described second interval time is by the time of the described first newly-increased data write the 3rd memory node stored in the former data stored in described second memory node and described temporary storage node.
In conjunction with the first possible implementation of first aspect, in the third possible implementation of first aspect, described when described second memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node, comprising:
When described second memory node repairing failure, write direct the store in described temporary storage node described first newly-increased data the 3rd memory node; Or,
When described second memory node repairing failure, repair described first memory node, when described first memory node reparation success, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described first memory node and described temporary storage node; When described first memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node.
In conjunction with the third possible implementation of first aspect, in the 4th kind of possible implementation of first aspect, described when described first memory node reparation success, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described first memory node and described temporary storage node, also comprise:
Produce within the 3rd interval time the 3rd newly-increased data are write described first memory node, described 3rd memory node and described temporary storage node respectively; Or,
Produce within described 3rd interval time the 3rd newly-increased data are write described first memory node and described 3rd memory node respectively, and after the will store in described temporary storage node described first newly-increased data write the 3rd memory node, delete described temporary storage node;
Wherein, described 3rd interval time is by the time of the described first newly-increased data write the 3rd memory node stored in the former data stored in described first memory node and described temporary storage node.
In conjunction with implementation, the third possible implementation of first aspect and the 4th kind of possible implementation of first aspect that the second of the first possible implementation of first aspect, first aspect is possible, in the 5th kind of possible implementation of first aspect, the number of described second memory node is multiple, described second memory node of described reparation, comprising:
When multiple second memory node all breaks down, repair described multiple second memory node successively.
In conjunction with the third possible implementation of first aspect, in the 6th kind of possible implementation of first aspect, described first memory node of described reparation, comprising:
Described multiple second memory node all repairing failure time, repair described first memory node.
Second aspect, provides a kind of device of data restore, and described device comprises:
Set up module, for when the first memory node breaks down, set up temporary storage node;
First writing module, for being produced for the first interval time first newly-increased data write the second memory node and the described temporary storage node set up module and set up respectively;
Second writing module, for when described second memory node breaks down, sets up described the described first newly-increased data write the 3rd memory node stored in the temporary storage node of module foundation;
Wherein, identical former data are stored in described second memory node and described first memory node, described first interval time be described first memory node break down described second memory node break down between time, described 3rd memory node is set up after the detection time that described first memory node has broken down, described detection time is after described temporary storage node is set up, and determines whether described first memory node can recover the waiting time of normal work automatically.
In the first possible implementation of second aspect, described second writing module, comprising:
First r/w cell, for when described second memory node breaks down, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node; Or,
Repair unit, for when described second memory node breaks down, repair described second memory node;
Second r/w cell, for when described second memory node reparation is successful, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described second memory node and described temporary storage node;
3rd r/w cell, for when described second memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node.
In conjunction with the first possible implementation of second aspect, in the implementation that the second of second aspect is possible, described second r/w cell, also for the produce within the second interval time second newly-increased data are write described second memory node, described 3rd memory node and described temporary storage node respectively; Or,
Produce within described second interval time second newly-increased data are write described second memory node and described 3rd memory node respectively, and after described 3rd memory node of the will store in described temporary storage node described first newly-increased data write, delete described temporary storage node;
Wherein, described second interval time is by the time of the described first newly-increased data write the 3rd memory node stored in the former data stored in described second memory node and described temporary storage node.
In conjunction with the first possible implementation of second aspect, in the third possible implementation of second aspect, described 3rd r/w cell, comprising:
First writes subelement, and for when described second memory node repairing failure, write direct the store in described temporary storage node described first newly-increased data the 3rd memory node; Or,
Repair subelement, for when described second memory node repairing failure, repair described first memory node;
Second writes subelement, for when described first memory node reparation is successful, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described first memory node and described temporary storage node;
3rd writes subelement, for when described first memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node.
In conjunction with the third possible implementation of second aspect, in the 4th kind of possible implementation of second aspect, described second writes subelement, also for the produce within the 3rd interval time the 3rd newly-increased data are write described first memory node, described 3rd memory node and described temporary storage node respectively; Or,
Produce within described 3rd interval time the 3rd newly-increased data are write described first memory node and described 3rd memory node respectively, and after the will store in described temporary storage node described first newly-increased data write the 3rd memory node, delete described temporary storage node;
Wherein, described 3rd interval time is by the time of the described first newly-increased data write the 3rd memory node stored in the former data stored in described first memory node and described temporary storage node.
In conjunction with implementation, the third possible implementation of second aspect and the 4th kind of possible implementation of second aspect that the second of the first possible implementation of second aspect, second aspect is possible, in the 5th kind of possible implementation of second aspect, the number of described second memory node is multiple, described reparation unit, for when multiple second memory node all breaks down, repair described multiple second memory node successively.
In conjunction with the third possible implementation of second aspect, in the 6th kind of possible implementation of second aspect, described reparation subelement, for described multiple second memory node all repairing failure time, repair described first memory node.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
By when the first memory node breaks down, set up temporary storage node, and the second memory node that the first memory node is broken down to break down between the first newly-increased data write temporary storage node of producing the first interval time, with when the second memory node breaks down, make no matter whether to repair the second memory node, first newly-increased data write the 3rd memory node that all can will store in temporary storage node, thus improve the probability of data restore.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the method flow diagram of the data restore that the embodiment of the present invention one provides;
Fig. 2 is the method flow diagram of the data restore that the embodiment of the present invention two provides;
Fig. 3 is the schematic flow sheet of the data restore that the embodiment of the present invention two provides;
Fig. 4 is the apparatus structure schematic diagram of the first data restore that the embodiment of the present invention three provides;
Fig. 5 is the apparatus structure schematic diagram of the second data restore that the embodiment of the present invention three provides;
Fig. 6 is the apparatus structure schematic diagram of the third data restore that the embodiment of the present invention three provides.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Embodiment one
Embodiments provide a kind of method of data restore, the method is in distributed memory system, data have many parts of copies, and be dispersed in different memory nodes to ensure the situation of the high reliability of data, give the memory node storing data all to break down, cause the solution of loss of data.For convenience of explanation, the present embodiment is the first memory node and the second memory node to store the node of former data, is illustrated the method for data restore.See Fig. 1, the method flow that the present embodiment provides comprises:
101: when the first memory node breaks down, set up temporary storage node, and the first newly-increased data produced for the first interval time write the second memory node and temporary storage node respectively.
Wherein, in the second memory node and the first memory node, store identical former data, the first interval time be the first memory node break down the second memory node break down between time.
102: when the second memory node breaks down, by the first newly-increased data write the 3rd memory node stored in temporary storage node.
Wherein, the 3rd memory node is set up after the detection time that the first memory node has broken down.
In sum, the method that the embodiment of the present invention provides, by when the first memory node breaks down, set up temporary storage node, and the second memory node that the first memory node is broken down to break down between the first newly-increased data write temporary storage node of producing the first interval time, with when the second memory node breaks down, make no matter whether to repair the second memory node, first newly-increased data write the 3rd memory node that all can will store in temporary storage node, thus improve the probability of data restore.
Embodiment two
In order to solve the lower problem of the successful probability of data restore in prior art, embodiments provide a kind of method of data restore, the method is used for carrying out data restore when multiple memory nodes of storing data backup all break down to storage system.For convenience of explanation, the present embodiment with the first memory node for memory node that in storage system, first is broken down, second memory node is the node broken down subsequently is example, in conjunction with the content of above-described embodiment one, is illustrated the method that the present embodiment provides.See Fig. 2, the method flow that the present embodiment provides comprises:
201: when the first memory node breaks down, set up temporary storage node, and the first newly-increased data produced for the first interval time write the second memory node and temporary storage node respectively.
Wherein, in the second memory node and the first memory node, store identical former data, the first interval time be the first memory node break down the second memory node break down between time.The number of the second memory node can be one or more, and when the number of the second memory node is multiple time, the first interval time was that the first memory node breaks down the time that multiple second memory node all breaks down.The present embodiment does not limit the number of the second memory node, in embodiments of the present invention, is only one for the number of the second memory node and is described.
Particularly, the reason that the first memory node breaks down can be hardware fault, or software fault, in addition, can also have other reasons, such as, manually misplug and pull out.For the reason that the first memory node breaks down, the embodiment of the present invention does not specifically limit at this.
Further, when the first memory node breaks down, set up the concrete mode of temporary storage node for when the first memory node breaks down, system is to the write operation failure of the first memory node, and the first memory node returns failure response; After system acceptance to failure response, set up temporary storage node immediately.The concrete grammar that the first newly-increased data produced for the first interval time write the second memory node and temporary storage node respectively can be that the first newly-increased data produced for the first interval time write the second memory node and store in former data area, and the daily record of newly-increased data of backup a first separately in addition in the second memory node; By the first newly-increased data write temporary storage node, and by the first mark, the first newly-increased data are identified in temporary storage node.Thus in the data that can store at the second memory node, distinguish former data and the first newly-increased data, the newly-increased data of write temporary storage node in different interval times can also be distinguished.
For the ease of understanding, be illustrated for the flow process shown in Fig. 3 (1).In Fig. 3 (1), time initial, in system, there are two memory nodes: the first memory node A
1with the second memory node A
2, in two memory nodes, all store identical former data A.At the first memory node A
1when breaking down, set up temporary storage node B, and by the first memory node A
1break down the second memory node A
2produce the first interval time between breaking down first newly-increased data a
1write the second memory node A
2store the region of former data A, and at the second memory node A
2backup log in the other separately newly-increased data a of backup a first
1daily record, by the first newly-increased data a
1write temporary storage node B, and data a is increased by the first mark newly to first in temporary storage node B
1identify.
In addition, when the first memory node breaks down, also have other to be produced for the first interval time first newly-increased data write the mode of the second memory node and temporary storage node respectively, such as, store the region of former data and the temporary storage node etc. that writes direct in second memory node that first of generation the first interval time the newly-increased data write direct.Adopt which kind of mode for concrete, the embodiment of the present invention does not specifically limit at this.
It should be noted that, when the first memory node breaks down, after setting up temporary storage node, a detection time of system wait is to determine whether the first memory node can recover normal work automatically, wherein, detection time can be 5 minutes or 10 minutes etc., and the embodiment of the present invention does not limit the concrete size of detection time at this, specifically can select according to actual conditions.If the first memory node cannot recover within detection time, then set up the 3rd memory node.Wherein, the data backup that the 3rd memory node will be used in ensuing data restore process, the 3rd memory node and temporary storage node can be same memory node.Certainly, if the first memory node can recover automatically within detection time, then can not set up the 3rd memory node, the the first newly-increased data stored in the store in the backup log of the second memory node first newly-increased data or temporary storage node are only needed to write in the first memory node, just can ensureing that the data stored in the first memory node and the second memory node keep synchronous, also operating without the need to continuing the follow-up data reparation performed in the embodiment of the present invention.For the situation that the second memory node breaks down, if do not repaired the second memory node, then perform 202, if repaired the second memory node, then perform 203.
Wherein, the reason that the second memory node breaks down can be hard error, or software error, in addition, can also have other reasons, such as, manually misplug and pull out.The time that second memory node breaks down can be after the first memory node breaks down, in the detection time of system wait, or after a detection time, system establishes the 3rd memory node and the store in the former data stored in the second memory node and the second memory node or temporary storage node first newly-increased data is write in the process of the 3rd memory node.The reason broken down for the second memory node and the time of breaking down, the embodiment of the present invention does not specifically limit at this.
It should be noted that when the number of the second memory node is multiple, then when multiple second memory node all breaks down, just select whether to repair multiple second memory node, to determine follow-up execution 202 or to perform 203.
202: when the second memory node breaks down, by the first newly-increased data write the 3rd memory node stored in temporary storage node.
For this step, when the first memory node and the second memory node all break down, temporary storage node in system also stores the first newly-increased data of write in the first interval time, therefore, can select no longer to perform other and repair operation, and directly the store in temporary storage node first newly-increased data are write in the 3rd memory node, make to have backed up in the 3rd memory node the first newly-increased data that should write the first memory node and the second memory node.Certainly, this is a kind of optional data recovery method just, can be used in some and cannot perform the situation of repairing operation to the first memory node and the second memory node.
For example, as shown in Fig. 3 (2), at the first memory node A
1after breaking down, the second memory node A
2also there occurs fault, then direct the first newly-increased data a will stored in temporary storage node B
1write the 3rd memory node A
3.
It should be noted that, after executing this step, can also select to perform subsequent step, the present invention does not specifically limit the operation executed after this step at this.
203: when the second memory node breaks down, repair the second memory node, when the second memory node reparation success, perform 204, when the second memory node repairing failure, if do not repaired the first memory node, then select execution 205, if repaired the first memory node, then select execution 206.
Particularly, the method for repairing the second memory node, particular by artificially plug or reset, is repaired the second memory node, in addition, other can also be adopted to repair the method for the second memory node.For the concrete method which kind of adopts repair the second memory node, the embodiment of the present invention does not specifically limit at this.
It should be noted that, when the number of the second memory node is multiple, then repair multiple second memory node successively.Wherein, the order of repairing multiple second memory node successively can be selected arbitrarily, the sequencing that such as can break down according to multiple second memory node, repairs successively or repairs from the second memory node broken down at first from the second memory node finally broken down.In addition, can also repair Stochastic choice second memory node from multiple the second memory node broken down.The embodiment of the present invention does not specifically limit the order of repairing the second memory node successively at this.Preferably, the sequencing that can break down according to multiple second memory node, repairs successively from the second memory node finally broken down.In addition, when having a second memory node reparation success in the process of repairing the second memory node successively, step 204 is performed.Multiple second memory node all repairing failure time, if do not repaired the first memory node, then can select perform step 205, if repaired the first memory node, then perform step 206.
204: by the first newly-increased data write the 3rd memory node stored in the former data stored in the second memory node and temporary storage node.
For this step, because the former data stored in the second memory node add that the data total amount of the first newly-increased data stored in temporary storage node is larger, the time needed for process store in the former data stored in second memory node and temporary storage node first newly-increased data being write the 3rd memory node is longer, and system likely produces new data in this process.Therefore, the store in the former data stored in the second memory node and temporary storage node first newly-increased data are write in the process of the 3rd memory node, one of following two kinds of operations can also be included but not limited to:
The first: the produce within the second interval time second newly-increased data are write the second memory node, the 3rd memory node and temporary storage node respectively.
Wherein, the second interval time was by the time of the first newly-increased data write the 3rd memory node stored in the former data stored in the second memory node and temporary storage node.
Particularly, by the concrete grammar that the produce within the second interval time second newly-increased data write the second memory node, the 3rd memory node and temporary storage node be respectively: write direct the second newly-increased data the 3rd memory node; Second newly-increased data are write the second memory node store in former data area, and back up separately the daily record of a second newly-increased data in addition in the second memory node; By the second newly-increased data write temporary storage node, and by the second mark, the second newly-increased data are identified in temporary storage node.Thus in the data that can store at the second memory node, distinguish former data, the first newly-increased data and the second newly-increased data, the newly-increased data writing temporary storage node can also be distinguished in the different time periods in temporary storage node.
In this operation, except the produce in the second interval time second newly-increased data being write the second memory node and the 3rd memory node with except keeping the data syn-chronization in the second memory node and the 3rd memory node, also by the second newly-increased data write temporary storage node, to allow the first newly-increased data and the second newly-increased data have multiple backup in systems in which, improve the guarantee of data restore.
For example, as shown in Fig. 3 (3), at the second memory node A
2when repairing successfully, by the second memory node A
2store in the former data A of middle storage and temporary storage node first newly-increased data a
1write the 3rd memory node A
3, the second newly-increased data a also will produced within the second interval time
2write direct the 3rd memory node A
3, by the second newly-increased data a
2write the second memory node A
2store in former data area, and back up separately a second newly-increased data a in addition in the second memory node
2daily record, by the second newly-increased data a
2write temporary storage node B, and data a is increased by the second mark newly to second in temporary storage node B
2identify.
In addition, after the second interval time, if the store in the former data stored in the second memory node and temporary storage node first newly-increased data all successfully write the 3rd memory node, then delete temporary storage node, thus the storage space shared by temporary storage node can be discharged.
The second: the produce within the second interval time second newly-increased data are write the second memory node and the 3rd memory node respectively, and after the will store in temporary storage node first newly-increased data write the 3rd memory node, delete temporary storage node.
Wherein, the second interval time with above-mentioned the first operate in the second interval time identical.
Particularly, produce within the second interval time second newly-increased data are write respectively the concrete grammar of the second memory node and the 3rd memory node for the 3rd memory node that the second newly-increased data write direct, second newly-increased data are write the second memory node store in former data area, and back up separately the daily record of a second newly-increased data in addition in the second memory node.Thus in the data that can store at the second memory node, distinguish former data, the first newly-increased data and the second newly-increased data.
In this operation, delete temporary storage node, can system memory space be saved.
For example, as shown in Fig. 3 (4), at the second memory node A
2when repairing successfully, by the second memory node A
2store in the former data A of middle storage and temporary storage node B first newly-increased data a
1write the 3rd memory node A
3, the second newly-increased data a also will produced within the second interval time
2write direct the 3rd memory node A
3, by the second newly-increased data a
2write the second memory node A
2store in former data area, and at the second memory node A
2in the other separately newly-increased data a of backup a second
2daily record, and at the will store in temporary storage node B first newly-increased data a
1write the 3rd memory node A
3after, delete temporary storage node B.
It should be noted that, in application process, can be guarantees in order to improve data restore or in order to save any one that system memory space selects in above-mentioned two kinds of operations according to actual conditions, specifically select which kind of operation above-mentioned, the present embodiment do concrete restriction to this.
In addition, owing to storing former data and the first newly-increased data in the second memory node, therefore, when the second memory node reparation success, the former data in the second memory node and the first newly-increased data can also be selected all to write the 3rd memory node, and without using the newly-increased data of first in temporary storage node.Now, the second above-mentioned interval time is the time former data in the second memory node and the first newly-increased data all being write the 3rd memory node, in above-mentioned the second operation, after first of the second memory node the newly-increased data are write the 3rd memory node, temporary storage node can be deleted.
Further, after data restore, 3rd memory node instead of the first original memory node, in second memory node and the 3rd memory node, data all store complete former data, the first newly-increased data and second increase data newly, system can perform normal write operation, and data newly-increased are afterwards write the second memory node and the 3rd memory node all respectively.But because fault occurred the second memory node, the security storing data is no longer reliable.Therefore, preferably, complete former data, the first newly-increased data and the second newly-increased data can also be stored in the 3rd memory node after, re-establish the 4th memory node, total data in 3rd memory node is all backuped to the 4th memory node, and after completion of the back-up, reject the second memory node in systems in which.If there is multiple second memory node, then need to re-establish four memory node identical with the second memory node number, and the total data in the 3rd memory node is all backuped to each the 4th memory node, and after completion of the back-up, delete the plurality of second memory node in systems in which, thus still have in guarantee system to break down with the first memory node before the data backup of same number.
205: by the first newly-increased data write the 3rd memory node stored in temporary storage node.
For this step, when the second memory node repairing failure, the temporary storage node in system also stores the first newly-increased data of write in the first interval time.Therefore, can select no longer to perform other and repair operation, and directly the store in temporary storage node first newly-increased data are write in the 3rd memory node, make to have backed up in the 3rd memory node the first newly-increased data that should write the first memory node and the second memory node.Certainly, this is a kind of optional data recovery method just, can be used in some and cannot perform the situation of repairing operation to the first memory node.
For example, as shown in Fig. 3 (5), at the second memory node A
2during repairing failure, then direct the first newly-increased data a will stored in temporary storage node B
1write the 3rd memory node A
3.
It should be noted that, after executing this step, can also select to perform subsequent step, the present invention does not specifically limit the operation executed after this step at this.
206: repair the first memory node, when the first memory node reparation success, perform 207, when the first memory node repairing failure, perform 208.
Particularly, the method for repairing the first memory node, particular by artificially plug or reset, is repaired the first memory node, in addition, other can also be adopted to repair the method for the first memory node.For the concrete method which kind of adopts repair the first memory node, the embodiment of the present invention does not specifically limit at this.
207: by the first newly-increased data write the 3rd memory node stored in the former data stored in the first memory node and temporary storage node.
For this step, because the former data stored in the first memory node add that the data total amount of the first newly-increased data stored in temporary storage node is larger, the time needed for process store in the former data stored in first memory node and temporary storage node first newly-increased data being write the 3rd memory node is longer, and system likely produces new data in this process.Therefore, the store in the former data stored in the first memory node and temporary storage node first newly-increased data are write in the process of the 3rd memory node, one of following two kinds of operations can also be included but not limited to:
The first: the produce within the 3rd interval time the 3rd newly-increased data are write the first memory node, the 3rd memory node and temporary storage node respectively.
Wherein, the 3rd interval time was by the time of the first newly-increased data write the 3rd memory node stored in the former data stored in the first memory node and temporary storage node.
Particularly, by the concrete grammar that the produce within the 3rd interval time the 3rd newly-increased data write the second memory node, the 3rd memory node and temporary storage node be respectively: write direct the 3rd newly-increased data the 3rd memory node; 3rd newly-increased data are write the second memory node store in former data area, and back up separately the daily record of a 3rd newly-increased data in addition in the second memory node; By the 3rd newly-increased data write temporary storage node, and by the 3rd mark, the 3rd newly-increased data are identified in temporary storage node.Thus in the data that can store at the second memory node, distinguish former data, the first newly-increased data and the 3rd newly-increased data, the newly-increased data writing temporary storage node can also be distinguished in the different time periods in temporary storage node.
In this operation, except the produce in the 3rd interval time the 3rd newly-increased data being write the first memory node and the 3rd memory node with except keeping the data syn-chronization in the first memory node and the 3rd memory node, also by the 3rd newly-increased data write temporary storage node, to allow the first newly-increased data and the 3rd newly-increased data have multiple backup in systems in which, improve the guarantee of data restore.
For example, as shown in Fig. 3 (6), at the first memory node A
1when repairing successfully, by the first memory node A
1store in the former data A of middle storage and temporary storage node B first newly-increased data a
1write the 3rd memory node A
3, the 3rd newly-increased data a also will produced within the 3rd interval time
3write direct the 3rd memory node A
3, by the 3rd newly-increased data a
3write the first memory node A
1store in former data area, and at the first memory node A
1in the other separately newly-increased data a of backup a 3rd
3daily record, by the 3rd newly-increased data a
3write temporary storage node B, and data a is increased by the 3rd mark newly to the 3rd in temporary storage node B
3identify.
In addition, after the 3rd interval time, if the store in the former data stored in the first memory node and temporary storage node first newly-increased data all successfully writes the 3rd memory node, then delete temporary storage node, thus discharge the storage space that temporary storage node takies.
The second: the produce within the 3rd interval time the 3rd newly-increased data are write the first memory node and the 3rd memory node respectively, and after the will store in temporary storage node first newly-increased data write the 3rd memory node, delete temporary storage node.
Wherein, the 3rd interval time with above-mentioned the first operate in the 3rd interval time identical.
Particularly, produce within the 3rd interval time the 3rd newly-increased data are write respectively the concrete grammar of the second memory node and the 3rd memory node for the 3rd memory node that the 3rd newly-increased data write direct, 3rd newly-increased data are write the second memory node store in former data area, and back up separately the daily record of a 3rd newly-increased data in addition in the second memory node.Thus in the data that can store at the second memory node, distinguish former data, the first newly-increased data and the 3rd newly-increased data.
In this operation, delete temporary storage node, can system memory space be saved.
For example, as shown in Fig. 3 (7), at the first memory node A
1when repairing successfully, by the first memory node A
1store in the former data A of middle storage and temporary storage node B first newly-increased data a
1write the 3rd memory node A
3, the 3rd newly-increased data a also will produced within the 3rd interval time
3write direct the 3rd memory node A
3, by the 3rd newly-increased data a
3write the first memory node A
1store in former data area, and at the first memory node A
1in the other separately newly-increased data a of backup a 3rd
3daily record, and at the will store in temporary storage node B first newly-increased data a
1write the 3rd memory node A
3after, delete temporary storage node B.
It should be noted that, in application process, can be guarantees in order to improve data restore or in order to save any one that system memory space selects in above-mentioned two kinds of operations according to actual conditions, specifically select which kind of mode above-mentioned, the present embodiment do concrete restriction at this.
Further, after data restore, 3rd memory node instead of the second original memory node, in first memory node and the 3rd memory node, data all store complete former data, the first newly-increased data and the 3rd increase data newly, system can perform normal write operation, and data newly-increased are afterwards write the first memory node and the 3rd memory node all respectively.But because fault occurred the first memory node, the security of storage is no longer reliable.Therefore, preferably, complete former data, the first newly-increased data and the second newly-increased data can also be stored in the 3rd memory node after, re-establish the 4th memory node, total data in 3rd memory node is all backuped to the 4th memory node, and after completion of the back-up, reject the first memory node in systems in which.
In addition, if there is multiple second memory node, then also needs to re-establish the 5th memory node and carry out alternative original multiple second memory nodes.Because the 3rd memory node instead of one of them second memory node, then fewer than the number of original second memory node one of the number of the 5th memory node; Total data in 3rd memory node is all backuped to each the 5th memory node, and after completion of the back-up, delete the plurality of second memory node in systems in which, thus still have in guarantee system to break down with the first memory node before the data backup of same number.
208: by the first newly-increased data write the 3rd memory node stored in temporary storage node.
For this step, when the first memory node repairing failure, temporary storage node in system also stores the first newly-increased data of write in the first interval time, therefore, the store in temporary storage node first newly-increased data can be selected to write in the 3rd memory node, make to have backed up in the 3rd memory node the first newly-increased data that should write the first memory node and the second memory node.
For example, as shown in Fig. 3 (8), at the first memory node A
1during repairing failure, then direct the first newly-increased data a will stored in temporary storage node B
1write the 3rd memory node A
3.
In sum, the method that the embodiment of the present invention provides, by when the first memory node breaks down, set up temporary storage node, and the second memory node that the first memory node is broken down to break down between the first newly-increased data write temporary storage node of producing the first interval time, with when the second memory node breaks down, make no matter whether to repair the second memory node, first newly-increased data write the 3rd memory node that all can will store in temporary storage node, thus improve the probability of data restore; In addition, by first recovering the data of the second memory node, if recover unsuccessfully, the data of the first memory node can also be recovered, recovering data with the newly-increased data in conjunction with other nodes, thus reach quick and the object of large probability repair data.
Embodiment three
Embodiments provide a kind of device of data restore, the method for data restore of this device for performing above-described embodiment one or embodiment two and providing.See Fig. 4, this device comprises:
Set up module 401, for when the first memory node breaks down, set up temporary storage node;
First writing module 402, for being produced for the first interval time first newly-increased data write the second memory node respectively and set up the temporary storage node that module 401 sets up;
Second writing module 403, for when the second memory node breaks down, will set up the first newly-increased data write the 3rd memory node stored in temporary storage node that module 401 sets up;
Wherein, identical former data are stored in second memory node and the first memory node, first interval time be the first memory node break down the second memory node break down between time, the 3rd memory node is set up after the detection time that the first memory node has broken down.
Particularly, see Fig. 5, the second writing module 403, comprising:
First r/w cell 404, for when the second memory node breaks down, by the first newly-increased data write the 3rd memory node stored in temporary storage node; Or,
Repair unit 405, for when the second memory node breaks down, repair the second memory node;
Second r/w cell 406, for when the second memory node reparation is successful, by the first newly-increased data write the 3rd memory node stored in the former data stored in the second memory node and temporary storage node;
3rd r/w cell 407, for when the second memory node repairing failure, by the first newly-increased data write the 3rd memory node stored in temporary storage node.
Further, the second r/w cell 406, also for the produce within the second interval time second newly-increased data are write the second memory node, the 3rd memory node and temporary storage node respectively; Or,
Produce within the second interval time second newly-increased data are write the second memory node and the 3rd memory node respectively, and after the will store in temporary storage node first newly-increased data write the 3rd memory node, deletes temporary storage node;
Wherein, the second interval time was by the time of the first newly-increased data write the 3rd memory node stored in the former data stored in the second memory node and temporary storage node.
Particularly, see Fig. 6, the 3rd r/w cell 407, comprising:
First writes subelement 4071, and for when the second memory node repairing failure, write direct the store in temporary storage node first newly-increased data the 3rd memory node; Or,
Repair subelement 4072, for when the second memory node repairing failure, repair the first memory node;
Second writes subelement 4073, for when the first memory node reparation is successful, by the first newly-increased data write the 3rd memory node stored in the former data stored in the first memory node and temporary storage node;
3rd writes subelement 4074, for when the first memory node repairing failure, by the first newly-increased data write the 3rd memory node stored in temporary storage node.
Further, second writes subelement 4073, also for the produce within the 3rd interval time the 3rd newly-increased data are write the first memory node, the 3rd memory node and temporary storage node respectively; Or,
Produce within the 3rd interval time the 3rd newly-increased data are write the first memory node and the 3rd memory node respectively, and after the will store in temporary storage node first newly-increased data write the 3rd memory node, deletes temporary storage node;
Wherein, the 3rd interval time was by the time of the first newly-increased data write the 3rd memory node stored in the former data stored in the first memory node and temporary storage node.
Particularly, the number of the second memory node is multiple, repairs unit 405, for when multiple second memory node all breaks down, repairs multiple second memory node successively.
Correspondingly, repair subelement 4072, for multiple second memory node all repairing failure time, repair the first memory node.
In sum, the device that the embodiment of the present invention provides, by when the first memory node breaks down, set up temporary storage node, and the second memory node that the first memory node is broken down to break down between the first newly-increased data write temporary storage node of producing the first interval time, with when the second memory node breaks down, make no matter whether to repair the second memory node, first newly-increased data write the 3rd memory node that all can will store in temporary storage node, thus improve the probability of data restore; In addition, by first recovering the data of the second memory node, if recover unsuccessfully, the data of the first memory node can also be recovered, recovering data with the newly-increased data in conjunction with other nodes, thus reach quick and the object of large probability repair data.
Embodiment four
Present embodiments provide a kind of device of data restore, the device of this data restore comprises at least one processor, such as CPU (CentralProcessingUnit, CPU (central processing unit)) etc., processor is coupled with multiple memory node by bus, to perform the function of data restore.Wherein, memory node includes but not limited to the first memory node, the second memory node.
When the first memory node breaks down, processor, for setting up temporary storage node, and the first newly-increased data produced for the first interval time write the second memory node and temporary storage node respectively;
When the second memory node breaks down, processor, for storing in temporary storage node first newly-increased data write the 3rd memory node;
Wherein, identical former data are stored in second memory node and the first memory node, first interval time be the first memory node break down the second memory node break down between time, the 3rd memory node is set up after the detection time that the first memory node has broken down.
Particularly, when the second memory node breaks down, processor, for when the second memory node breaks down, by the first newly-increased data write the 3rd memory node stored in temporary storage node; Or,
When the second memory node breaks down, repair the second memory node, when the second memory node reparation success, by the first newly-increased data write the 3rd memory node stored in the former data stored in the second memory node and temporary storage node; When the second memory node repairing failure, by the first newly-increased data write the 3rd memory node stored in temporary storage node.
Further, when the second memory node reparation success, processor, for writing the second memory node, the 3rd memory node and temporary storage node respectively by the produce within the second interval time second newly-increased data; Or,
Produce within the second interval time second newly-increased data are write the second memory node and the 3rd memory node respectively, and after the will store in temporary storage node first newly-increased data write the 3rd memory node, deletes temporary storage node;
Wherein, the second interval time was by the time of the first newly-increased data write the 3rd memory node stored in the former data stored in the second memory node and temporary storage node.
Particularly, when the second memory node repairing failure, processor, for when the second memory node repairing failure, write direct the store in temporary storage node first newly-increased data the 3rd memory node; Or,
When the second memory node repairing failure, repair the first memory node, when the first memory node reparation success, by the first newly-increased data write the 3rd memory node stored in the former data stored in the first memory node and temporary storage node; When the first memory node repairing failure, by the first newly-increased data write the 3rd memory node stored in temporary storage node.
Further, when the first memory node reparation success, processor, for writing the first memory node, the 3rd memory node and temporary storage node respectively by the produce within the 3rd interval time the 3rd newly-increased data; Or,
Produce within the 3rd interval time the 3rd newly-increased data are write the first memory node and the 3rd memory node respectively, and after the will store in temporary storage node first newly-increased data write the 3rd memory node, deletes temporary storage node;
Wherein, the 3rd interval time was by the time of the first newly-increased data write the 3rd memory node stored in the former data stored in the first memory node and temporary storage node.
Particularly, the number of the second memory node is multiple, when the second memory node repaired by processor, for when multiple second memory node all breaks down, repairs multiple second memory node successively.
Correspondingly, when repairing the first memory node, processor, for multiple second memory node all repairing failure time, repair the first memory node.
In sum, the device that the embodiment of the present invention provides, by when the first memory node breaks down, temporary storage node is set up by processor, and the second memory node that the first memory node is broken down to break down between the first newly-increased data write temporary storage node of producing the first interval time, with when the second memory node breaks down, make no matter whether to repair the second memory node, first newly-increased data write the 3rd memory node that all can will store in temporary storage node, thus improve the probability of data restore; In addition, by first recovering the data of the second memory node, if recover unsuccessfully, the data of the first memory node can also be recovered, recovering data with the newly-increased data in conjunction with other nodes, thus reach quick and the object of large probability repair data.
It should be noted that: the device of the data restore that above-described embodiment provides is when data restore, only be illustrated with the division of above-mentioned each functional module, in practical application, can distribute as required and by above-mentioned functions and be completed by different functional modules, inner structure by the device of data restore is divided into different functional modules, to complete all or part of function described above.In addition, the device of the data restore that above-described embodiment provides and the embodiment of the method for data restore belong to same design, and its specific implementation process refers to embodiment of the method, repeats no more here.
The invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
One of ordinary skill in the art will appreciate that all or part of step realizing above-described embodiment can have been come by hardware, the hardware that also can carry out instruction relevant by program completes, described program can be stored in a kind of computer-readable recording medium, the above-mentioned storage medium mentioned can be ROM (read-only memory), disk or CD etc.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (12)
1. a method for data restore, is characterized in that, described method comprises:
When the first memory node breaks down, set up temporary storage node, and the first newly-increased data produced for the first interval time write the second memory node and described temporary storage node respectively;
When described second memory node breaks down, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node;
Wherein, identical former data are stored in described second memory node and described first memory node, described first interval time be described first memory node break down described second memory node break down between time, described 3rd memory node is set up after the detection time that described first memory node has broken down, described detection time is after described temporary storage node is set up, and determines whether described first memory node can recover the waiting time of normal work automatically.
2. method according to claim 1, is characterized in that, described when described second memory node breaks down, and by the described first newly-increased data write the 3rd memory node stored in described temporary storage node, comprising:
When described second memory node breaks down, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node; Or,
When described second memory node breaks down, repair described second memory node, when described second memory node reparation success, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described second memory node and described temporary storage node; When described second memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node.
3. method according to claim 2, it is characterized in that, described when described second memory node reparation success, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described second memory node and described temporary storage node, also comprise:
Produce within the second interval time second newly-increased data are write described second memory node, described 3rd memory node and described temporary storage node respectively; Or,
Produce within described second interval time second newly-increased data are write described second memory node and described 3rd memory node respectively, and after described 3rd memory node of the will store in described temporary storage node described first newly-increased data write, delete described temporary storage node;
Wherein, described second interval time is by the time of the described first newly-increased data write the 3rd memory node stored in the former data stored in described second memory node and described temporary storage node.
4. method according to claim 2, is characterized in that, described when described second memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node, comprising:
When described second memory node repairing failure, write direct the store in described temporary storage node described first newly-increased data the 3rd memory node; Or,
When described second memory node repairing failure, repair described first memory node, when described first memory node reparation success, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described first memory node and described temporary storage node; When described first memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node.
5. method according to claim 4, it is characterized in that, described when described first memory node reparation success, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described first memory node and described temporary storage node, also comprise:
Produce within the 3rd interval time the 3rd newly-increased data are write described first memory node, described 3rd memory node and described temporary storage node respectively; Or,
Produce within described 3rd interval time the 3rd newly-increased data are write described first memory node and described 3rd memory node respectively, and after the will store in described temporary storage node described first newly-increased data write the 3rd memory node, delete described temporary storage node;
Wherein, described 3rd interval time is by the time of the described first newly-increased data write the 3rd memory node stored in the former data stored in described first memory node and described temporary storage node.
6. the method according to claim arbitrary in claim 2-5, is characterized in that, the number of described second memory node is multiple, and described second memory node of described reparation, comprising:
When multiple second memory node all breaks down, repair described multiple second memory node successively.
7. a device for data restore, is characterized in that, described device comprises:
Set up module, for when the first memory node breaks down, set up temporary storage node;
First writing module, for being produced for the first interval time first newly-increased data write the second memory node and the described temporary storage node set up module and set up respectively;
Second writing module, for when described second memory node breaks down, sets up described the described first newly-increased data write the 3rd memory node stored in the temporary storage node of module foundation;
Wherein, identical former data are stored in described second memory node and described first memory node, described first interval time be described first memory node break down described second memory node break down between time, described 3rd memory node is set up after the detection time that described first memory node has broken down, described detection time is after described temporary storage node is set up, and determines whether described first memory node can recover the waiting time of normal work automatically.
8. device according to claim 7, is characterized in that, described second writing module, comprising:
First r/w cell, for when described second memory node breaks down, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node; Or,
Repair unit, for when described second memory node breaks down, repair described second memory node;
Second r/w cell, for when described second memory node reparation is successful, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described second memory node and described temporary storage node;
3rd r/w cell, for when described second memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node.
9. device according to claim 8, is characterized in that, described second r/w cell, also for the produce within the second interval time second newly-increased data are write described second memory node, described 3rd memory node and described temporary storage node respectively; Or,
Produce within described second interval time second newly-increased data are write described second memory node and described 3rd memory node respectively, and after described 3rd memory node of the will store in described temporary storage node described first newly-increased data write, delete described temporary storage node;
Wherein, described second interval time is by the time of the described first newly-increased data write the 3rd memory node stored in the former data stored in described second memory node and described temporary storage node.
10. device according to claim 8, is characterized in that, described 3rd r/w cell, comprising:
First writes subelement, and for when described second memory node repairing failure, write direct the store in described temporary storage node described first newly-increased data the 3rd memory node; Or,
Repair subelement, for when described second memory node repairing failure, repair described first memory node;
Second writes subelement, for when described first memory node reparation is successful, by the described first newly-increased data write the 3rd memory node stored in the described former data stored in described first memory node and described temporary storage node;
3rd writes subelement, for when described first memory node repairing failure, by the described first newly-increased data write the 3rd memory node stored in described temporary storage node.
11. devices according to claim 10, it is characterized in that, described second writes subelement, also for the produce within the 3rd interval time the 3rd newly-increased data are write described first memory node, described 3rd memory node and described temporary storage node respectively; Or,
Produce within described 3rd interval time the 3rd newly-increased data are write described first memory node and described 3rd memory node respectively, and after the will store in described temporary storage node described first newly-increased data write the 3rd memory node, delete described temporary storage node;
Wherein, described 3rd interval time is by the time of the described first newly-increased data write the 3rd memory node stored in the former data stored in described first memory node and described temporary storage node.
12. devices according to claim arbitrary in claim 9-11, it is characterized in that, the number of described second memory node is multiple, described reparation unit, for when multiple second memory node all breaks down, repair described multiple second memory node successively.
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