CN103063877B - 带有温度隔离结构的硅基石英加速度传感器 - Google Patents
带有温度隔离结构的硅基石英加速度传感器 Download PDFInfo
- Publication number
- CN103063877B CN103063877B CN201210568654.5A CN201210568654A CN103063877B CN 103063877 B CN103063877 B CN 103063877B CN 201210568654 A CN201210568654 A CN 201210568654A CN 103063877 B CN103063877 B CN 103063877B
- Authority
- CN
- China
- Prior art keywords
- isolation structure
- fork
- quartz tuning
- temperature isolation
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 239000010453 quartz Substances 0.000 title claims abstract description 48
- 238000002955 isolation Methods 0.000 title claims abstract description 38
- 230000001133 acceleration Effects 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 13
- 229910052710 silicon Inorganic materials 0.000 title abstract description 13
- 239000010703 silicon Substances 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 title abstract 7
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 238000005259 measurement Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000006073 displacement reaction Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008447 perception Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Gyroscopes (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210568654.5A CN103063877B (zh) | 2012-12-25 | 2012-12-25 | 带有温度隔离结构的硅基石英加速度传感器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210568654.5A CN103063877B (zh) | 2012-12-25 | 2012-12-25 | 带有温度隔离结构的硅基石英加速度传感器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103063877A CN103063877A (zh) | 2013-04-24 |
CN103063877B true CN103063877B (zh) | 2014-08-20 |
Family
ID=48106587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210568654.5A Active CN103063877B (zh) | 2012-12-25 | 2012-12-25 | 带有温度隔离结构的硅基石英加速度传感器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103063877B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105865666B (zh) * | 2016-05-03 | 2018-11-20 | 成都皆为科技有限公司 | 一种一体式双石英音叉谐振敏感元件及测力模块 |
CN109100535B (zh) * | 2018-06-22 | 2020-04-10 | 西安交通大学 | 基于soq的柔性杠杆放大振梁加速度计芯片及其加工工艺 |
CN108732382A (zh) * | 2018-06-22 | 2018-11-02 | 西安交通大学 | 带有柔性放大机构的基于soq石英振梁加速度计芯片 |
CN111965388B (zh) * | 2020-08-21 | 2022-08-05 | 西安交通大学 | 一种低温漂相对平面贴装差动型集成式谐振加速度计 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101738494A (zh) * | 2009-12-11 | 2010-06-16 | 西安交通大学 | 一种硅微加速度传感器芯片 |
CN102520012A (zh) * | 2011-12-06 | 2012-06-27 | 西安交通大学 | 一种基于mems技术的热扩散率传感器芯片及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07254716A (ja) * | 1994-03-16 | 1995-10-03 | Murata Mfg Co Ltd | 半導体容量式加速度センサおよびその製造方法 |
US7138694B2 (en) * | 2004-03-02 | 2006-11-21 | Analog Devices, Inc. | Single crystal silicon sensor with additional layer and method of producing the same |
-
2012
- 2012-12-25 CN CN201210568654.5A patent/CN103063877B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101738494A (zh) * | 2009-12-11 | 2010-06-16 | 西安交通大学 | 一种硅微加速度传感器芯片 |
CN102520012A (zh) * | 2011-12-06 | 2012-06-27 | 西安交通大学 | 一种基于mems技术的热扩散率传感器芯片及其制备方法 |
Non-Patent Citations (5)
Title |
---|
JP特开平7-254716A 1995.10.03 |
一种硅微多传感器集成研究;赵玉龙等;《传感技术学报》;20080331;第21卷(第3期);第404-407页 * |
特种压阻式加速度传感器的研制;赵立波等;《西安交通大学学报》;20060930;第40卷(第9期);第1049-1052页 * |
赵玉龙等.一种硅微多传感器集成研究.《传感技术学报》.2008,第21卷(第3期), |
赵立波等.特种压阻式加速度传感器的研制.《西安交通大学学报》.2006,第40卷(第9期), |
Also Published As
Publication number | Publication date |
---|---|
CN103063877A (zh) | 2013-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Wang et al. | A MEMS piezoelectric in-plane resonant accelerometer based on aluminum nitride with two-stage microleverage mechanism | |
CN107015025B (zh) | 一种差动式石墨烯谐振梁加速度传感器 | |
CN103063877B (zh) | 带有温度隔离结构的硅基石英加速度传感器 | |
CN103063875A (zh) | 一种硅基差动石英加速度传感器 | |
CN101303365B (zh) | 谐振式微加速度计 | |
WO2014169540A1 (zh) | 非等截面悬臂梁压电式加速度传感器 | |
CN102608355A (zh) | 谐振-力平衡隧道电流式三轴加速度传感器及制作方法 | |
CN106352862B (zh) | 一种数字式差动型微加速度计 | |
CN102590555A (zh) | 谐振-力平衡电容式三轴加速度传感器及制作方法 | |
CN108205118B (zh) | 一种谐振型磁传感器敏感单元及数字频率输出磁传感器 | |
Duwel et al. | Quality factors of MEMS gyros and the role of thermoelastic damping | |
CN107688103A (zh) | 一种基于石墨烯谐振特性的单轴加速度计 | |
CN101109635A (zh) | 基于隧道效应的微机械陀螺仪 | |
CN112325998B (zh) | 一种基于内共振的痕量物质传感器及方法 | |
CN101271124A (zh) | L形梁压阻式微加速度计及其制作方法 | |
Han et al. | A low cross-axis sensitivity piezoresistive accelerometer fabricated by masked-maskless wet etching | |
Li et al. | A micro-machined differential resonance accelerometer based on silicon on quartz method | |
Jia et al. | Novel high-performance piezoresistive shock accelerometer for ultra-high-g measurement utilizing self-support sensing beams | |
CN104819710A (zh) | 一种具有温度补偿结构的谐振式硅微机械陀螺 | |
CN107101629B (zh) | 一种硅微机械石墨烯梁谐振式陀螺仪 | |
Zhou et al. | Fabrication of a MEMS capacitive accelerometer with symmetrical double-sided serpentine beam-mass structure | |
CN109855791B (zh) | 基于多折叠支撑梁梳齿谐振器的真空检测器件 | |
CN113740560B (zh) | 一种弱耦合谐振式加速度传感器 | |
CN111812355B (zh) | 一种低应力敏感度硅微谐振式加速度计结构 | |
Shang et al. | Z-axis differential silicon-on-insulator resonant accelerometer with high sensitivity |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhao Jianhua Inventor before: Zhao Yulong Inventor before: Li Cun Inventor before: Rao Hao |
|
COR | Change of bibliographic data | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161109 Address after: 710075 Xi'an hi tech Zone, new industrial park, No. foreign exchange Road, No. 19 Patentee after: Shaanxi Lin Tak inertia Electric Co. Ltd. Address before: 710048 Xianning Road, Shaanxi, Xi'an, No. 28 Patentee before: Xi'an Jiaotong University |
|
C41 | Transfer of patent application or patent right or utility model | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhao Jianhua Inventor before: Zhao Yulong Inventor before: Li Cun Inventor before: Rao Hao |
|
COR | Change of bibliographic data | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161114 Address after: 710075 Xi'an hi tech Zone, new industrial park, No. foreign exchange Road, No. 19 Patentee after: Shaanxi Lin Tak inertia Electric Co. Ltd. Address before: 710048 Xianning Road, Shaanxi, Xi'an, No. 28 Patentee before: Xi'an Jiaotong University |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Silicon substrate quartz acceleration sensor with temperature isolation structure Effective date of registration: 20171114 Granted publication date: 20140820 Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd Pledgor: Shaanxi Lin Tak inertia Electric Co. Ltd. Registration number: 2017610000147 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20181212 Granted publication date: 20140820 Pledgee: Shaanxi Changan financing guarantee Limited by Share Ltd Pledgor: Shaanxi Lin Tak inertia Electric Co. Ltd. Registration number: 2017610000147 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Silicon based quartz accelerometer with temperature isolation structure Effective date of registration: 20210622 Granted publication date: 20140820 Pledgee: Pudong Development Bank of Shanghai Limited by Share Ltd. Xi'an branch Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd. Registration number: Y2021610000156 |