CN103058192A - Preparation method of silicon carbide micro-powder used in silicon carbide crystal growth - Google Patents
Preparation method of silicon carbide micro-powder used in silicon carbide crystal growth Download PDFInfo
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- CN103058192A CN103058192A CN2013100039740A CN201310003974A CN103058192A CN 103058192 A CN103058192 A CN 103058192A CN 2013100039740 A CN2013100039740 A CN 2013100039740A CN 201310003974 A CN201310003974 A CN 201310003974A CN 103058192 A CN103058192 A CN 103058192A
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- silicon carbide
- heating chamber
- powder
- preparation
- carbide micro
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 239000000843 powder Substances 0.000 title claims abstract description 19
- 239000013078 crystal Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 235000013312 flour Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 239000000428 dust Substances 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 4
- 239000012467 final product Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 9
- 230000002194 synthesizing effect Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 239000011863 silicon-based powder Substances 0.000 abstract 1
- 239000003595 mist Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 240000003936 Plumbago auriculata Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
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CN201310003974.0A CN103058192B (en) | 2013-01-06 | 2013-01-06 | A kind of preparation method of the silicon carbide micro-powder for growing silicon carbice crystals |
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CN201310003974.0A CN103058192B (en) | 2013-01-06 | 2013-01-06 | A kind of preparation method of the silicon carbide micro-powder for growing silicon carbice crystals |
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CN103058192A true CN103058192A (en) | 2013-04-24 |
CN103058192B CN103058192B (en) | 2016-05-25 |
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CN201310003974.0A Active CN103058192B (en) | 2013-01-06 | 2013-01-06 | A kind of preparation method of the silicon carbide micro-powder for growing silicon carbice crystals |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106882806A (en) * | 2015-12-12 | 2017-06-23 | 天津榛发科技有限责任公司 | A kind of preparation method of silicon carbide micro-powder |
CN107128924A (en) * | 2017-06-13 | 2017-09-05 | 宁夏大学 | A kind of method that utilization microwave sintering prepares β SiC |
CN107974712A (en) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method of Semi-insulating silicon carbide mono-crystal |
CN108946735A (en) * | 2017-05-19 | 2018-12-07 | 新疆天科合达蓝光半导体有限公司 | A kind of synthetic method of the big partial size sic powder of growing silicon carbice crystals |
CN111960420A (en) * | 2020-09-03 | 2020-11-20 | 上海第二工业大学 | Method for rapidly producing nano silicon carbide by microwave irradiation of electronic waste |
CN115124040A (en) * | 2022-07-07 | 2022-09-30 | 安徽微芯长江半导体材料有限公司 | Solid-phase synthesis method for improving material ratio of large-particle-size silicon carbide powder |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4117096A (en) * | 1976-08-20 | 1978-09-26 | Nippon Crucible Co., Ltd. | Process for producing powder of β-type silicon carbide |
CN1037689A (en) * | 1988-04-28 | 1989-12-06 | 苏联科学院宏观动力学结构研究所 | Produce the method for silicon B-carbide |
CN1636870A (en) * | 2004-12-30 | 2005-07-13 | 清华大学 | Nanometer SiC powder preparing process |
CN101891192A (en) * | 2010-07-02 | 2010-11-24 | 山东大学 | Method for synthesizing carbide nano powder by solid-phase reaction |
CN102701208A (en) * | 2012-06-21 | 2012-10-03 | 上海硅酸盐研究所中试基地 | High-temperature solid-phase synthesis method of high-purity silicon carbide powder |
-
2013
- 2013-01-06 CN CN201310003974.0A patent/CN103058192B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4117096A (en) * | 1976-08-20 | 1978-09-26 | Nippon Crucible Co., Ltd. | Process for producing powder of β-type silicon carbide |
CN1037689A (en) * | 1988-04-28 | 1989-12-06 | 苏联科学院宏观动力学结构研究所 | Produce the method for silicon B-carbide |
CN1636870A (en) * | 2004-12-30 | 2005-07-13 | 清华大学 | Nanometer SiC powder preparing process |
CN101891192A (en) * | 2010-07-02 | 2010-11-24 | 山东大学 | Method for synthesizing carbide nano powder by solid-phase reaction |
CN102701208A (en) * | 2012-06-21 | 2012-10-03 | 上海硅酸盐研究所中试基地 | High-temperature solid-phase synthesis method of high-purity silicon carbide powder |
Non-Patent Citations (3)
Title |
---|
L.N.SATAPATHY ETC.: "Microwave synthesis of phase-pure,fine silicon carbide powder", 《MATERIALS RESEARCH BULLETIN》, vol. 40, no. 10, 6 October 2005 (2005-10-06), pages 1871 - 1882 * |
姜洪舟等: "《无机非金属材料热加工设备》", 31 July 2012, article "5.2.9材料的微波加热技术", pages: 423 * |
王福等: "微波加热焦碳与石英砂合成SiC粉体", 《材料工程》, no. 7, 21 August 2009 (2009-08-21), pages 32 - 35 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106882806A (en) * | 2015-12-12 | 2017-06-23 | 天津榛发科技有限责任公司 | A kind of preparation method of silicon carbide micro-powder |
CN108946735A (en) * | 2017-05-19 | 2018-12-07 | 新疆天科合达蓝光半导体有限公司 | A kind of synthetic method of the big partial size sic powder of growing silicon carbice crystals |
CN108946735B (en) * | 2017-05-19 | 2022-11-11 | 新疆天科合达蓝光半导体有限公司 | Synthesis method of large-particle-size silicon carbide powder for silicon carbide crystal growth |
CN107128924A (en) * | 2017-06-13 | 2017-09-05 | 宁夏大学 | A kind of method that utilization microwave sintering prepares β SiC |
CN107974712A (en) * | 2017-11-14 | 2018-05-01 | 山东天岳先进材料科技有限公司 | A kind of preparation method of Semi-insulating silicon carbide mono-crystal |
CN111960420A (en) * | 2020-09-03 | 2020-11-20 | 上海第二工业大学 | Method for rapidly producing nano silicon carbide by microwave irradiation of electronic waste |
CN115124040A (en) * | 2022-07-07 | 2022-09-30 | 安徽微芯长江半导体材料有限公司 | Solid-phase synthesis method for improving material ratio of large-particle-size silicon carbide powder |
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CN103058192B (en) | 2016-05-25 |
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Address after: 102206, Changping District, Shahe, Beijing Town, North Village Road, West Bridge, Shahe industrial city Applicant after: Hebei Tongguang Crystal Co., Ltd. Address before: Four building B, building 071051, building six, Science Park, 5699 North Second Ring Road, Hebei, Baoding, Applicant before: Baoding Kerui Crystal Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: BAODING KERUI CRYSTAL CO., LTD. TO: HEBEI TONGGUANG CRYSTAL CO., LTD. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Preparation method of silicon carbide micro-powder used in silicon carbide crystal growth Effective date of registration: 20160826 Granted publication date: 20160525 Pledgee: Chinese for key construction fund limited Pledgor: Hebei Tongguang Crystal Co., Ltd. Registration number: 2016990000669 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201207 Granted publication date: 20160525 Pledgee: Chinese for key construction fund Ltd. Pledgor: HEBEI TONGGUANG CRYSTAL Co.,Ltd. Registration number: 2016990000669 |
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Address after: No. 6001, North Third Ring Road, Baoding City, Hebei Province Patentee after: Hebei Tongguang Semiconductor Co.,Ltd. Address before: 102206 West Shahe Industrial City, ZhuangQiao, beiercun Road, Shahe Town, Changping District, Beijing Patentee before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. |