CN103050624B - Ga-Ge-Sb-Te film material used for phase change memory - Google Patents

Ga-Ge-Sb-Te film material used for phase change memory Download PDF

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CN103050624B
CN103050624B CN201310025243.6A CN201310025243A CN103050624B CN 103050624 B CN103050624 B CN 103050624B CN 201310025243 A CN201310025243 A CN 201310025243A CN 103050624 B CN103050624 B CN 103050624B
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film material
thin
phase transition
transition storage
gasb
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CN103050624A (en
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张中华
宋三年
宋志棠
吕叶刚
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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Abstract

The invention provides a Ga-Ge-Sb-Te film material used for a phase change memory. The general formula of the Ga-Ge-Sb-Te film material is GaxGeySbzTew, wherein x is more than 0 and less than or equal to 16, y is more than or equal to 23 and less than or equal to 28, z is more than or equal to 26 and less than or equal to 31, and w is more than or equal to 30 and less than or equal to 40. The Ga-Ge-Sb-Te film material provided by the invention has the characteristics of high crystallization temperature, good thermal stability and strong data retentivity and can be applied to high temperature fields such as automotive electronics.

Description

For the Ga-Ge-Sb-Te thin-film material of phase transition storage
Technical field
The present invention relates to microelectronics technology, particularly relate to a kind of Ga-Ge-Sb-Te thin-film material for phase transition storage.
Background technology
Phase transition storage (PCM) is a kind of non-volatile semiconductor memory of rising in recent years.Compared with traditional memory, it has little, the high read or write speed of memory cell size, low-power consumption, has extended cycle life and the advantage such as anti-radiation performance of excellence.Based on above-mentioned advantage, phase transition storage can not only replace existing memory, but also produces new application in some fields that normal memory does not reach (field such as such as space, space technology and military affairs).Phase transition storage is competitor strong in novel memory technology, is expected to the main flow memory technology that alternative flash memory (Flash technology) becomes nonvolatile memory of future generation, thus has wide market prospects.
The application of phase transition storage brings the storage of realization " 0 " and " 1 " based on the reversible of phase-change material wherein under electric impulse signal operation between high resistance and low resistance.
The core of phase transition storage is phase change memory dielectric material, traditional phase-change material mainly Ge 2sb 2te 5, it has been widely used in phase change disc and phase transition storage.But it is existing with Ge 2sb 2te 5for the phase transition storage of phase-change material, still there are some problems: 1) crystallization temperature is lower, be faced with the danger of loss of data; 2) thermal stability is bad, and data retention can not be guaranteed, and it can provide the working temperature of authentic data preservation in 10 years to be only 80 degree, seriously constrains its application.Such as in fields such as automotive electronics, it is higher than 125 degree to the temperature that memory device can be on active service.Therefore seeking a kind of high data retention, have the phase change film material of wide temperature range working range, is current urgent problem.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of data holding ability strong and the Ga-Ge-Sb-Te thin-film material for phase transition storage that physical property is adjustable.
For achieving the above object and other relevant objects, the invention provides a kind of Ga-Ge-Sb-Te thin-film material for phase transition storage, its general formula is Ga xge ysb zte w, wherein 0<x≤16,23≤y≤28,26≤z≤31,30≤w≤40.
Wherein, preferred formula is Ga 6ge 28sb 26te 40.
Preferably, described Ga-Ge-Sb-Te thin-film material adopts the one in sputtering method, electron-beam vapor deposition method, chemical vapour deposition technique and atomic layer deposition method to be formed.
Preferably, described Ga-Ge-Sb-Te thin-film material adopts GaSb and GST alloys target cosputtering to be formed; More preferably, GaSb and Ge is adopted 3sb 2te 5alloys target cosputtering is formed.
As mentioned above, the Ga-Ge-Sb-Te thin-film material for phase transition storage of the present invention, has following beneficial effect: data holding ability is strong, Heat stability is good, and crystallization rate is fast, and physical property is adjustable, can be applied in the high-temperature fields such as automotive electronics; And material preparation process is simple, is convenient to accurately control material composition and subsequent technique; The phase transition storage using Ga-Ge-Sb-Te material of the present invention to be prepared into can realize reversible transition under potential pulse effect, and stable electrical properties.
Accompanying drawing explanation
Fig. 1 is shown as the resistance-temperature relationship figure of the Ga-Ge-Sb-Te thin-film material of different component.
Fig. 2 is shown as the data holding ability result of calculation figure of the Ga-Ge-Sb-Te thin-film material of different component.
It is Ga that Fig. 3 is shown as component 6ge 28sb 26te 40the current-voltage relation figure of the phase transition storage that thin-film material preparation is formed.
It is Ga that Fig. 4 is shown as component 6ge 28sb 26te 40resistance-voltage relationship the figure of the phase transition storage that thin-film material preparation is formed.
It is Ga that Fig. 5 is shown as component 6ge 28sb 26te 40the fatigue behaviour figure of the phase transition storage that thin-film material preparation is formed.
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Fig. 5.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
The general formula of the Ga-Ge-Sb-Te thin-film material for phase transition storage of the present invention is Ga xge ysb zte w, wherein 0<x≤16,23≤y≤28,26≤z≤31,30≤w≤40.
Wherein, the Ga-Ge-Sb-Te thin-film material for phase transition storage of the present invention can obtain different crystallization temperatures, fusing point and crystallization activation energy by regulating ratio between element.
Wherein, the Ga-Ge-Sb-Te thin-film material for phase transition storage of the present invention can realize the reversible transformation of high low resistance under electric impulse signal operation, and resistance remains unchanged under not having electric impulse signal to operate; 2 and Resistance states stable is above there is under outside electric pulse; The material data retention temperature of 10 years is higher than 135 ° of C; Especially general formula is Ga 6ge 28sb 26te 40thin-film material.
Wherein, the Ga-Ge-Sb-Te thin-film material for phase transition storage of the present invention can adopt multiple method to be formed, such as, and sputtering method, electron-beam vapor deposition method, chemical vapour deposition technique, atomic layer deposition method etc.
Preferably, the method for GaSb and GST alloys target cosputtering can be adopted to prepare, its element ratio can obtain by regulating the power that different target is corresponding.
Such as, GaSb and Ge 3sb 2te 5alloys target all adopts radio-frequency power supply, the power of GaSb between 9W to 20W, Ge 3sb 2te 5power be 25W; Described sputtering time is 30 minutes, carrys out cosputtering thus and forms Ga-Ge-Sb-Te thin-film material of the present invention.
Particularly, GaSb target and Ge is adopted 3sb 2te 5the technological parameter of alloys target two target magnetic control co-sputtering comprises: background vacuum is less than 2 × 10 -4pascal, sputtering pressure is between 0.18 Pascal to 0.25 Pascal, and sputter gas is argon, and temperature is room temperature, the radio-frequency power supply power be applied on GaSb target be 9 watts to 20 watts, be applied to Ge 3sb 2te 5radio-frequency power supply power on target is fixed as 25 watts, and sputtering time is 30 minutes, and deposited film thickness is 195 nanometer to 220 nanometers.
The preparation method of phase-change storage material provided by the invention, technique is simple, is convenient to accurately control material composition and subsequent technique.
For assessing the phase-change characteristic of the Ga-Ge-Sb-Te thin-film material for phase transition storage of the present invention, comprise crystallization temperature, thermal stability, data holding ability, and the performance of assessment phase transition storage, to every test that the Ga-Ge-Sb-Te thin-film material for phase transition storage prepared by Semiconductor substrate carries out with the phase-change memory cell using Ga-Ge-Sb-Te of the present invention as storage medium, test result is as follows:
Fig. 1 is the resistance-temperature relationship figure of the Ga-Ge-Sb-Te thin-film material for phase transition storage of the present invention.As can be seen from the figure, the crystallization temperature of Ga-Ge-Sb-Te thin-film material can regulate between 240-325 ° of C, and comparatively GST material (about 160 ° of C) increases significantly.There is not too large change in the high low resistance of different Ga-Ge-Sb-Te thin-film material, but crystallization temperature raises along with the increase of gallium content, therefore can by regulating the crystallization temperature of the content control Ga-Ge-Sb-Te thin-film material of gallium.
As shown in Figure 2,10 annual datas of Ga-Ge-Sb-Te thin-film material keep temperature first to raise rear reduction along with the increase of Ga content.Can find out that 10 annual data confining forces of Ga-Ge-Sb-Te thin-film material comparatively improve a lot than GST material, wherein, when gallium content is 13%, the data retention of Ga-Ge-Sb-Te thin-film material is best, can reach 214 degree.Can find out, the thermal stability of Ga-Ge-Sb-Te material system and data retention can be optimized by regulating the content of gallium simultaneously.
Ga-Ge-Sb-Te thin-film material is prepared into phase change memory cell device, obtains the current-voltage relation of this phase transition storage after tested as shown in Figure 3.Because the Ga-Ge-Sb-Te film initially prepared is the amorphous state of high value, when DC direct current loads, there is the threshold voltage of SET process in device.And then when applying direct current, device presents the current-voltage relation of approximately linear ohm type.
Fig. 4 is the voltage-resistance curve of the phase change memory cell device that Ga-Ge-Sb-Te thin-film material is prepared into.Under applying electric pulse, described phase transition storage realizes reversible transition.Testing potential pulse used is 100 nanoseconds and 500 nanoseconds, under the electric pulse of 100 nanoseconds, can obtain phase transition storage and realize " wiping " (resistance of high resistant step-down) and " writing " (low-resistance uprises resistance) operation in 1.9 and 4.1V respectively; When potential pulse was 500 nanosecond, these two operating voltages are respectively 1.5 and 3.7V.
As shown in Figure 5, the phase transition storage shown in Fig. 4 reaches 4.1 × 10 without tired erasable number of times repeatedly 5secondary, high low resistance state all has stable resistance, ensure that the stability needed for device application.
In sum, compared with general storage medium, Ga-Ge-Sb-Te thin-film material for phase transition storage of the present invention, the storage medium of different crystallization temperature, fusing point and crystallization activation energy can be obtained by the content of adjustment four kinds of elements, and this system phase-change material phase change resistor difference is large, thus this Ga-Ge-Sb-Te series phase-change material has very strong adjustability, can provide specific performance needed for reality.Wherein, Ga 6ge 28sb 26te 40have high data retention, be applied in phase transition storage, device cell has service speed and good cycle-index faster, and it is the appropriate storage medium material for the preparation of phase transition storage as seen.
So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.

Claims (7)

1. for a Ga-Ge-Sb-Te thin-film material for phase transition storage, it is characterized in that: the general formula of the described Ga-Ge-Sb-Te thin-film material for phase transition storage is Ga 6ge 28sb 26te 40.
2. the Ga-Ge-Sb-Te thin-film material for phase transition storage according to claim 1, is characterized in that: described Ga-Ge-Sb-Te thin-film material adopts the one in sputtering method, electron-beam vapor deposition method, chemical vapour deposition technique and atomic layer deposition method to be formed.
3. the Ga-Ge-Sb-Te thin-film material for phase transition storage according to claim 2, is characterized in that: described Ga-Ge-Sb-Te thin-film material adopts GaSb and GST alloys target cosputtering to be formed.
4. the Ga-Ge-Sb-Te thin-film material for phase transition storage according to claim 3, is characterized in that: described Ga-Ge-Sb-Te thin-film material preferably adopts GaSb and Ge 3sb 2te 5alloys target cosputtering is formed.
5. the Ga-Ge-Sb-Te thin-film material for phase transition storage according to claim 4, is characterized in that: the GaSb alloys target that described Ga-Ge-Sb-Te thin-film material preferably adopts power between 9W to 20W and power are the Ge of 25W 3sb 2te 5alloys target cosputtering is formed.
6. the Ga-Ge-Sb-Te thin-film material for phase transition storage according to claim 5, is characterized in that: described Ga-Ge-Sb-Te thin-film material adopts GaSb and Ge 3sb 2te 5alloys target is that between 0.18 Pascal to 0.25 Pascal, cosputtering is formed at sputtering pressure.
7. the Ga-Ge-Sb-Te thin-film material for phase transition storage according to claim 6, is characterized in that: described Ga-Ge-Sb-Te thin-film material adopts GaSb and Ge 3sb 2te 5alloys target cosputtering is formed for 30 minutes.
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CN102610750A (en) * 2011-01-19 2012-07-25 旺宏电子股份有限公司 Quaternary gallium tellurium antimony (m-gatesb) based phase change memory devices

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