CN103050435A - Method and system for manufacturing semiconductor wafer with side protection - Google Patents
Method and system for manufacturing semiconductor wafer with side protection Download PDFInfo
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- CN103050435A CN103050435A CN2011103212605A CN201110321260A CN103050435A CN 103050435 A CN103050435 A CN 103050435A CN 2011103212605 A CN2011103212605 A CN 2011103212605A CN 201110321260 A CN201110321260 A CN 201110321260A CN 103050435 A CN103050435 A CN 103050435A
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Abstract
The invention relates to a method and system for manufacturing a semiconductor wafer with a side protection. The system comprises a power supply capable of being connected with the semiconductor wafer; the wafer has a main front surface and a rear surface which are opposite to each other and are connected together by a lateral side; the wafer can be subjected to a front section process for electroplating an embedded layer on the wafer; the system further comprises a macromolecular layer coating system which is used for applying macromolecular coating to the lateral side of the wafer before electroplating the embedded layer, wherein the macromolecular layer coating system applies the macromolecular layer by an electrophoretic technology driven by the power supply. Under such way, the macromolecular coating is applied to one parts of the main front surface and the rear surface and the lateral side of the wafer, and the macromolecular layer formed by the macromolecular coating is used as a barrier layer for preventing the embedded layer from being formed at the lateral side of the wafer.
Description
Technical field
The present invention relates to the manufacturing of semiconductor crystal wafer, particularly relate to a kind of semiconductor crystal wafer manufacture method and system with lateral protection that in manufacture process, protects the wafer side.
Background technology
In semiconductor industry, the manufacturing of semiconductor device comprises the manufacturing to a wafer, and it comprises that FEOL and last part technology are with electronic component (such as transistor, resistance, electric capacity etc.) patterning and form intraconnections to consist of integrated circuit in crystal.After the wafer manufacturing finished, this wafer was cut into independent crystal grain and then encapsulates.
It for example is the electronics intraconnections of wire, contact hole or interlayer hole to form that a part in FEOL, this wafer can be carried out mosaic craft.In order to form substructure, dielectric layer is formed at has conductive region on a substrate wherein.Then forming one is opened in the dielectric layer.This opening can be contact window, interlayer hole opening, wire irrigation canals and ditches or inlay opening.This opening is exposed out with the part of the conductive region in this substrate.Then the layer of metal layer is formed on the substrate and covers this opening fully.Many suitable metal materials can be used as this metal level, but herein in the described example, this metal level is to use copper or copper alloy (being commonly referred to copper).In an example, this metal level can form first the thin copper seed layer of one deck and then form the metal level of thick layer, and it is commonly called " inlaying layer ".In an example, the copper seed layer that this layer is thin can use physical vapour deposition (PVD) (PVD) or chemical vapour deposition (CVD) (CVD) to form, and copper inlays layer and can use electrochemistry plating (ECD) mode to form.
Apply metal level on substrate after, this wafer can clean to remove the particulate that produces by it is soaked in when applying this copper layer in the solution.It for example is that mode by this wafer of rotation is in addition dry that wafer after this cleaning also can utilize.At last, anneal and cmp (CMP) to remove the outer excess metal material of opening.
This wafer generally includes relative main front surface and rear surface, and is linked together by a side, and this side normally tilts.In mosaic craft, the metal level of usually wishing electroplating deposition is near the side of wafer but can not cover its side.Similarly, usually do not wish that the metal level of electroplating deposition extends the side of wafer yet.Therefore, some technology is developed to remove the part of the electroplating deposition metal level that is formed at the wafer side, but relevant dealer still wishes existing technology is done further improvement.
Summary of the invention
The object of the invention is to; a kind of new semiconductor crystal wafer manufacture method and system with lateral protection are provided; technical problem to be solved is to make it form protection wafer side barrier layer by the side at wafer before inlaying layer in formation; thereby the metal level that can prevent electroplating deposition extends the side of wafer, is very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of semiconductor crystal wafer manufacture method with lateral protection according to the present invention's proposition, it may further comprise the steps: the semiconductor wafer is provided, this wafer has relative main front surface and rear surface, and linked together by a side, this wafer can comprise that electroplating one inlays the technique of layer on this wafer; Before this inlays layer in plating, apply a macromolecule and coat this side of this wafer, but this macromolecule coating puts on this side does not put on this main front surface of this wafer and at least a portion of rear surface, and this macromolecule coating is to form a macromolecule layer as preventing that this from inlaying the barrier layer that layer is formed at this side of this wafer; Wherein this macromolecule coating is to be implemented by the electrophoretic techniques that a power supply drives.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid semiconductor crystal wafer manufacture method with lateral protection wherein puts on the width of this macromolecule layer of this main front surface of this wafer and rear surface between 3～5mm, and this main front surface and rear surface have the radius greater than 3～5mm.
Aforesaid semiconductor crystal wafer manufacture method with lateral protection wherein applies this macromolecule coating and comprises: this wafer is contacted with a macromolecular liquid so that but this macromolecule coating puts on this side of this wafer do not put on this main front surface of this wafer and at least a portion of rear surface; And this macromolecular liquid of this side of this wafer of hot curing is to form this macromolecule layer.
Aforesaid semiconductor crystal wafer manufacture method with lateral protection; before wherein applying the coating of this macromolecule and be after forming a thin copper seed layer and electroplating formation this inlays layer; and applying of this macromolecule coating be to carry out having under the inert gas of low-pressure, and be oxidized when this macromolecular liquid solidifies to reduce at least this Seed Layer.
Aforesaid semiconductor crystal wafer manufacture method with lateral protection, wherein applying the coating of this macromolecule comprises: with this wafer support on a carrying container that is full of this macromolecular liquid, so that the main front surface of this of this wafer and rear surface are vertical with the plane of this macromolecular liquid one upper surface, and so that at least a portion of this side does not still make this main front surface of this wafer and at least a portion of rear surface immerse in this macromolecular liquid; And with this wafer in roughly vertical with this main front surface and rear surface one axially rotation, so that this side Continuous Contact part of this wafer can be dipped into and shift out this macromolecular liquid in this carrying container.
Aforesaid semiconductor crystal wafer manufacture method with lateral protection, this macromolecular liquid on this side Continuous Contact part of hot curing in addition when wherein this macromolecular liquid of hot curing this side Continuous Contact of being included in this wafer partly is moved out of this macromolecular liquid in this carrying container.
Aforesaid semiconductor crystal wafer manufacture method with lateral protection; also comprise: after applying this macromolecule coating; electroplate to form this and inlay layer on this wafer, this inlays layer and coats not by this main front surface that this macromolecule layer coated and the part of rear surface.
The object of the invention to solve the technical problems also realizes by the following technical solutions.A kind of semiconductor crystal wafer manufacturing system with lateral protection according to the present invention's proposition; comprise: a power supply; can be connected with the semiconductor wafer; this wafer has relative main front surface and rear surface; and linked together by a side, this wafer can comprise that electroplating one inlays the FEOL of layer on this wafer.This system also comprises a macromolecule layer coating system, can this apply this side that a macromolecule is coated this wafer before inlaying layer in plating, this macromolecule coating puts on this main front surface of this wafer and a part and this side of rear surface, and wherein this macromolecule layer coating system is to apply this macromolecule layer by the electrophoretic techniques that a power supply drives.This macromolecule coating is to form a macromolecule layer as preventing that this from inlaying the barrier layer that layer is formed at this side of this wafer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection; wherein said macromolecule coating is to put on this main front surface of this wafer and a part and this side of rear surface; it is the side that macromolecule coating system puts on this wafer; and can optionally put on this main front surface of this wafer and the part of rear surface, rather than put on this main front surface and rear surface of whole wafer.In an example, put on the width of this macromolecule layer of this main front surface of this wafer and rear surface between 3～5mm, and this main front surface and rear surface has the radius greater than 3～5mm.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection, wherein said macromolecule layer coating system comprises a pedestal and a thermal source.This pedestal contacts this wafer with a macromolecular liquid, so that this macromolecule coating puts on this main front surface of this wafer and outer rim and this side of rear surface.And this macromolecular liquid of this side of this this wafer of thermal source hot curing is coated with to form this macromolecule layer.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection, wherein said macromolecule layer coating system apply the coating of this macromolecule be after forming a thin copper seed layer and electroplating formation this inlaying layer before.In this example, this macromolecule layer coating system also comprises a reative cell, this wafer can be sealed therein to carry out this macromolecule coating of hot curing of this thermal source.And in this example, this reative cell is the inert gas environment with low-pressure, and is oxidized when this macromolecular liquid solidifies to reduce at least this Seed Layer.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection, wherein said macromolecule layer coating system also comprises a carrying container that is full of a macromolecular liquid.In this example, wherein this carrying container has one or more rollers, with with this wafer support on this carrying container, so that the main front surface of this of this wafer and rear surface are roughly vertical with the plane of this macromolecular liquid one upper surface, and so that the part of at least a portion of this side and this main front surface and rear surface immerse in this macromolecular liquid; And wherein these one or more rollers make this wafer in roughly vertical with this a main front surface and rear surface axially rotation, so that this side Continuous Contact part of this wafer can be dipped into and shift out this macromolecular liquid in this carrying container.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection, wherein said thermal source this macromolecular liquid on this side Continuous Contact part of hot curing in addition when this side Continuous Contact of this wafer partly is moved out of this macromolecular liquid in this carrying container.
The object of the invention to solve the technical problems realizes in addition more by the following technical solutions.A kind of semiconductor crystal wafer manufacturing system with lateral protection according to the present invention proposes comprises one first board and coats on the semiconductor wafer for applying a macromolecule.This wafer has relative main front surface and rear surface, and linked together by a side, but this macromolecule coating puts on this side of this wafer does not put on this main front surface of this wafer and at least a portion of rear surface, to form a macromolecule layer.This semiconductor crystal wafer manufacturing system with lateral protection also comprises one second board.This second board receives this wafer from this first board, and this second board inlays layer on wafer for electroplating one, and this macromolecule layer is to be as preventing that this from inlaying the barrier layer that layer is formed at this side of this wafer.In this example, this integrated circuit electroplating system also comprises a mechanical arm so that wafer is sent to the second board from the first board.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection wherein puts on the width of this macromolecule layer of this main front surface of this wafer and rear surface side between 3～5mm, and this main front surface and rear surface have the radius greater than 3～5mm.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection, wherein said the first board comprises: a pedestal, so that this wafer is contacted with a macromolecular liquid, so that but this macromolecule coating puts on this side of this wafer do not put on this main front surface of this wafer and at least a portion of rear surface; And a thermal source, this macromolecular liquid of this side of this wafer of hot curing is to form this macromolecule layer.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection; wherein said the first board applies the coating of this macromolecule be after forming a thin copper seed layer and electroplating formation this inlaying layer before; and this first board also comprises: a reative cell; this wafer can be sealed therein to carry out this macromolecule coating of hot curing of this thermal source; this reative cell is the inert gas environment with low-pressure, and is oxidized when this macromolecular liquid solidifies to reduce at least this Seed Layer.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection, wherein said the first board also comprises: a carrying container that is full of a macromolecular liquid, wherein this carrying container has one or more rollers, with with this wafer support on this carrying container, so that the main front surface of this of this wafer and rear surface are vertical with the plane of this macromolecular liquid one upper surface, and so that at least a portion of this side does not still make this main front surface of this wafer and at least a portion of rear surface immerse in this macromolecular liquid; And wherein these one or more rollers make this wafer in an axially rotation vertical with this main front surface and rear surface, so that this side Continuous Contact part of this wafer can be dipped into and shift out this macromolecular liquid in this carrying container.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection, wherein said thermal source this macromolecular liquid on this side Continuous Contact part of hot curing in addition when this side Continuous Contact of this wafer partly is moved out of this macromolecular liquid.
Aforesaid semiconductor crystal wafer manufacturing system with lateral protection also comprises one the 3rd board, and the 3rd board receives this wafer from this second board, and the 3rd board is used for cleaning after this plating and dry this wafer; And one the 4th, the 4th board receives this wafer from the 3rd board, and the 4th board is used for to this wafer annealing.In this example, this semiconductor crystal wafer manufacturing system with lateral protection also comprises this mechanical arm, so that wafer is sent to the 3rd board and is sent to the 4th board from the 3rd board from the second board.
The present invention compared with prior art has obvious advantage and beneficial effect.By technique scheme; semiconductor crystal wafer manufacture method and system that the present invention has lateral protection have following advantages and beneficial effect at least: the present invention forms protection wafer side barrier layer by the side at wafer before inlaying layer in formation; thereby the metal level that can prevent electroplating deposition extends the side of wafer, is very suitable for practicality.
In sum, the invention relates to a kind of semiconductor crystal wafer manufacture method and system with lateral protection.This system, it comprises a power supply, can be connected with the semiconductor wafer, and this wafer has relative main front surface and rear surface, and is linked together by a side, and this wafer can comprise that electroplating one inlays the FEOL of layer on this wafer.This system also comprises a macromolecule layer coating system so that this applies this side that a macromolecule is coated this wafer before inlaying layer in plating, and wherein this macromolecule layer coating system is to apply this macromolecule coating by the electrophoretic techniques that a power supply drives.Under this mode, this macromolecule coating puts on this main front surface of this wafer and a part and this side of rear surface, and the macromolecule layer that this macromolecule coating forms is as preventing that this from inlaying the barrier layer that layer is formed at this side of this wafer.Of the present invention have significant progress technically, has obvious good effect, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above and other purpose of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Figure 1A to Figure 1B is the vertical view of according to an embodiment of the invention semiconductor crystal wafer and section (be along Figure 1A in dotted line) figure.
Fig. 2 is according to one embodiment of the invention, is used for applying the schematic diagram of the system of macromolecule layer on wafer.
Fig. 3 A to Fig. 3 D is the part according to the system of one embodiment of the invention among Fig. 2, the schematic diagram when wafer is rotated.
Fig. 4 is the profile of electroplating according to an embodiment of the invention the system of wafer.
Fig. 5 be embodiments of the invention further provide one integrate electroplating system with carry out this wafer and electroplate and mosaic craft in the block diagram of many different operatings of related process.
Fig. 6 and Fig. 7 are the process charts of many different operatings according to an embodiment of the invention.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; below in conjunction with accompanying drawing and preferred embodiment; the semiconductor crystal wafer manufacture method with lateral protection and its embodiment of system, method, step, structure, feature and effect thereof to foundation the present invention proposes are described in detail as follows.
Relevant aforementioned and other technology contents of the present invention, Characteristic can be known to present in the following detailed description that cooperates with reference to graphic preferred embodiment.Explanation by embodiment, should be to reach technological means and the effect that predetermined purpose takes to obtain one more deeply and concrete understanding to the present invention, yet appended graphic only provide with reference to the usefulness of explanation, the present invention is limited.
See also shown in Figure 1A to Figure 1B, Figure 1A to Figure 1B is the vertical view of according to an embodiment of the invention semiconductor crystal wafer 10 and section (be along Figure 1A in dotted line) figure.Wafer shown in the figure comprises relative main front surface 12 and rear surface 14, and it is linked together by a side 16, and this side can be (what show among the figure is the side that tilts) of tilting or not tilting.This side therefore some the time be called as the side of inclination, edge, hypotenuse or the side of inclination.This wafer can carry out FEOL or last part technology with electronic component (such as transistor, resistance, electric capacity etc.) patterning and form intraconnections to consist of integrated circuit in crystal.
Being similar to the mode of in the background technology paragraph, explaining, the part in FEOL, it for example is the electronics intraconnections of wire, contact hole or interlayer hole to form that this wafer 10 can carry out mosaic craft.In order to form substructure, dielectric layer is formed at has conductive region on a substrate wherein.Then forming one is opened in the dielectric layer.This opening can be contact window, interlayer hole opening, wire irrigation canals and ditches or inlay opening.This opening is exposed out with the part of the conductive region in this substrate.Then the layer of metal layer is formed on the substrate and covers this opening fully.Many suitable metal materials can be used as this metal level, but herein in the described example, this metal level is to use copper or copper alloy (being commonly referred to copper).In an example, the copper that this metal level can form first the thin copper seed layer of one deck and then formation thick layer inlays layer.In an example, the copper seed layer that this layer is thin can use physical vapour deposition (PVD) (PVD) or chemical vapour deposition (CVD) (CVD) to form, and copper inlays layer and can use electrochemistry plating (ECD) mode to form.
Apply metal level on substrate after, this wafer 10 can clean to remove the particulate that produces by it is soaked in when applying this copper layer in the solution.It for example is that mode by this wafer of rotation is in addition dry that wafer after this cleaning also can utilize.At last, anneal and cmp (CMP) to remove the outer excess metal material of opening.
As what in the background technology paragraph, explained, usually do not wish that the level of electroplating deposition extends the side 16 of wafer 10.According to some embodiment of the present invention, before layer was inlayed in formation, a non-conductive polymer layer 18 can be coated with or put on other modes the periphery of wafer.In one embodiment, after forming thin copper seed layer and before layer is inlayed in formation, this non-conductive polymer layer can put on the periphery of wafer.It is for example compatible with electroplating solution that this macromolecule layer can have one or more characteristics, and/or dissolve in some chemicals but normally be insoluble to electroplating solution.
This macromolecule layer 18 can be covered in the side 16 of wafer 10, and the surface that is coated on main front surface 12 and ringed perimeter zone separately, rear surface 14 that can be extra.Be in the wafer of 150～450 millimeters (mm) at the diameter that comprises main front surface 12 and rear surface 14, this macromolecule layer is extra front surface 12 and the rear surface 14 that coats 3～5 millimeters (mm) in an example.When formation was inlayed layer, this macromolecule layer can be used as the barrier layer that the part that prevents from inlaying the main front surface 12 of wafer that layer coats at side and by macromolecule and rear surface 14 forms.This macromolecule layer then can be during carrying out cmp (CMP), before or after to utilize for example be that some solution or lapping liquid are removed, therefore guarantee to inlay layer and can not form at side and by the main front surface 12 of wafer and rear surface 14 parts that macromolecule coats.
This macromolecule layer 18 can put on the wafer 10 with many different modes.As shown in Figure 2, Fig. 2 is according to one embodiment of the invention, is used for applying the schematic diagram of the system of macromolecule layer on wafer.According to an embodiment, apply macromolecule layer 18 on wafer 10 with a system 20.This system comprises that the container 22 of a carrying solution wherein fills up macromolecular liquid 24.This system comprises that also a pedestal contacts with macromolecular liquid 24 with these macromolecular liquids 24 of side 16 coating at wafer 10 with supporting wafer and with wafer, and can optionally be coated on main front surface 12 and rear surface 14 periphery surface the marginal portion and can partly not be coated on the inner margin portion of the periphery surface of main front surface 12 and rear surface 14.As shown in FIG., this system also comprises and is positioned on this macromolecular liquid carrying container so that the main front surface 12 of wafer and rear surface 14 with the side 16 of supporting wafer 10 by one or more rollers 26 roughly the plane of macromolecular liquid upper surface is vertical therewith, and so that at least a portion of side (part that also can comprise main front surface 12 and rear surface 14) immerse in this macromolecular liquid.As shown in FIG., roller 26 supports wafer in this example, is dipped in this macromolecular liquid so that the separately section of the main front surface 12 of wafer and rear surface 14 reaches therewith the lateral section of separately section connection.In this example, the degree of depth that wafer immerses in this macromolecular liquid can be to be set as the marginal portion of main front surface 12 and rear surface 14 can be coated by macromolecular liquid.
Roller 26 in this example can further be used for wafer in roughly vertical with main front surface 12 and rear surface 14 axially rotation.As shown in figure 3A to Fig. 3 D (part that only shows this system 20), Fig. 3 A to Fig. 3 D is the part according to the system of one embodiment of the invention among Fig. 2, the schematic diagram when wafer is rotated.Wherein, when roller 26 rotated wafer, the Continuous Contact of side 16 part can be dipped into and shift out in the macromolecular liquid 24.Similarly, for any part that need to be covered by macromolecular liquid in main front surface 12 and rear surface 14, its separately the Continuous Contact part 28 at edge can be dipped into and shift out in the macromolecular liquid 24.When the separately section of the main front surface 12 of wafer and rear surface 14 and therewith separately the lateral section that connects of section be dipped in this macromolecular liquid, this Polymer Solution can be covered on separately the section.In an example, this system can according to by one therewith power supply 30 electrophoretic techniques that drives that connects of wafer implement.
When the separately peripheral section of the main front surface 12 of wafer and rear surface 14 and when the lateral section that connects of section is extracted out in the macromolecular liquid 24 since then separately therewith, coat these separately the macromolecular liquid on the section can be cured to form macromolecule layer 18.In an example, it for example is bulb 32 or the in addition hot curing of the thermal source of ultraviolet origin system that this macromolecule layer can use.In an example, macromolecule layer 18 is after forming thin copper seed layer and applied before layer is inlayed in formation, the many parts that wherein comprise at least wafer and usually comprise in the system are placed in the reative cell 34 of the inert gas with low-pressure, and these inert gases for example can be nitrogen, argon or similar gas.Pressure in this reative cell can reduce at least or prevent at least that Seed Layer is oxidized when this macromolecular liquid of coating.
Moreover this macromolecule layer can form in plating and inlay layer with before consisting of substructure at wafer, puts on the periphery of wafer 10.After plating step the time, 18 of this macromolecule layers can be used as the barrier layer that the part that prevents from inlaying the main front surface 12 of wafer that layer coats at side and by macromolecule and rear surface 14 forms.
Fig. 4 is the profile of electroplating according to an embodiment of the invention the system 36 of wafer 10.This system comprises the container 38 of a carrying solution, and it is filled for example is the electroplate liquid 40 of copper sulphate.This wafer and a bronze medal metal 42 be dipped in this solution-this wafer as negative electrode and copper metal 42 as anode.This wafer negative electrode and copper metal anode are connected to a power supply 44, and it produces a potential difference at wafer negative electrode and copper metal anode, and apply a direct electric current to the copper metal anode.This electric current causes the copper atom oxidation in the copper metal anode and is dissolved in this solution.Potential difference between wafer negative electrode and copper metal anode can be ordered about the copper atom that dissolves in the solution towards the wafer cathode motion.Usually, the junction of the copper atom of dissolving between wafer negative electrode and copper metal anode can reduce gradually, so can form a bronze medal electrodeposited coating at the wafer cathode surface.But at the wafer peripheral that comprises macromolecule 18, this macromolecule layer can be used as barrier layer to prevent the main front surface 12 of wafer that copper is electroplated to be coated at side 16 and by macromolecule and the part of rear surface 14.
See also shown in Figure 5, be embodiments of the invention further provide one integrate electroplating system with carry out this wafer and electroplate and mosaic craft in the block diagram of many different operatings of related process.Embodiments of the invention can further provide one to integrate electroplating system 46 to carry out many different operatings of related process in these wafer 10 plating and the mosaic craft.System 46 can comprise that a bearing base 48 is to send into wafer and send this system.This system also comprise a plurality of boards with electroplate and mosaic craft in related process, and a robotic arm 50 or other motor machines to be being sent to another board and follow-up board with wafer from one first board, and proceed to last board.
As shown in FIG., the board in this system can comprise that the first board 52 is to apply macromolecule layer 18 on wafer; And under this purpose, the first board can comprise a system of system 20 as shown in Figure 2.Board in this system can comprise that also the second board 54 carries out electro-coppering with the wafer that will contain macromolecule layer 18.This second board can comprise a system of system 36 as shown in Figure 4.In addition, the board in this system also can comprise the 3rd board 56, and it comprises a clean solution and drying equipment after electroplating wafer being cleaned and drying, and one the 4th board 58 is annealed to this wafer.
Seeing also Figure 6 and Figure 7, is the process chart of many different operatings according to an embodiment of the invention.The method comprises provides one to comprise relative main front surface and rear surface, and the wafer that is linked together by a side, and this wafer can comprise that electroplating one inlays the FEOL of layer on this wafer.As shown in square frame 60, the method applies the side that a macromolecule layer is covered in wafer before can being included in and electroplating, but is not coated on the main front surface of wafer and at least a portion of rear surface.This macromolecule layer can be used as the barrier layer that prevents being implemented to form by an electrophoretic techniques that power supply drives when inlaying layer structure in side.
Applying this macromolecule layer can comprise this wafer is soaked in the macromolecular liquid side that is covered in wafer to form macromolecule layer, but be not coated on the main front surface of wafer and at least a portion of rear surface, then with its hot curing to form macromolecule layer.More specifically, for example, apply this macromolecule layer can comprise with wafer support on a macromolecular liquid carrying container so that roughly the plane of macromolecular liquid upper surface is vertical therewith the main front surface of wafer and rear surface, and so that at least a portion of side and the part that comprises main front surface and rear surface immerse in this macromolecular liquid.In this example, wafer can be roughly vertical with main front surface and rear surface axial the rotation so that the side Continuous Contact part of wafer can be dipped into and shift out in the macromolecular liquid.In addition, in this example, in addition hot curing after this macromolecule layer can partly be moved out of macromolecular liquid in the side Continuous Contact of wafer.
In an example, this macromolecule layer is after forming thin copper seed layer and applied before layer is inlayed in formation.In this example, this macromolecule layer coating can be carried out in the reative cell of the inert gas with low-pressure, to reduce at least or to prevent that at least Seed Layer is oxidized when being coated with this macromolecular liquid.
No matter this macromolecule layer is to utilize which kind of mode to apply, the method is also included within and applies after the macromolecule layer, electroplate to form and to inlay layer on wafer, this inlays layer and coats not the main front surface of the wafer that is coated by macromolecule and the part of rear surface, as shown in square frame piece 62.The method is also included within electroplate to form and this macromolecule layer is removed after inlaying layer.This last part technology also comprises wafer is carried out cmp (CMP).As shown in square frame 64, this macromolecule layer can remove by cmp (CMP).Or as shown in the square frame 66 of Fig. 7, this macromolecule layer can just remove carrying out cmp (CMP) before by solvent or lapping liquid, carries out cmp (CMP) at square frame 68 afterwards.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet be not to limit the present invention, any those skilled in the art, within not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (20)
1. semiconductor crystal wafer manufacture method with lateral protection is characterized in that it may further comprise the steps:
The semiconductor wafer is provided, and this wafer has relative main front surface and rear surface, and is linked together by a side, and this wafer can comprise that electroplating one inlays the technique of layer on this wafer;
Before this inlays layer in plating, apply a macromolecule and coat this side of this wafer, but this macromolecule coating puts on this side does not put on this main front surface of this wafer and at least a portion of rear surface, and this macromolecule coating is to form a macromolecule layer as preventing that this from inlaying the barrier layer that layer is formed at this side of this wafer;
Wherein this macromolecule layer is to be implemented by the electrophoretic techniques that a power supply drives.
2. the semiconductor crystal wafer manufacture method with lateral protection according to claim 1; it is characterized in that wherein putting on the width of this macromolecule layer of this main front surface of this wafer and rear surface between 3～5mm, and this main front surface and rear surface has the radius greater than 3～5mm.
3. the semiconductor crystal wafer manufacture method with lateral protection according to claim 1 is characterized in that wherein applying this macromolecule coating and comprises:
This wafer is contacted with a macromolecular liquid so that but this macromolecule coating puts on this side of this wafer do not put on this main front surface of this wafer and at least a portion of rear surface; And
This macromolecular liquid of this side of this wafer of hot curing is to form this macromolecule layer.
4. the semiconductor crystal wafer manufacture method with lateral protection according to claim 3 is characterized in that wherein applying this macromolecule coating and is after forming a thin copper seed layer and electroplating and forms this and apply before inlaying layer, and
Applying of this macromolecule coating is to carry out having under the inert gas of low-pressure, and be oxidized when this macromolecular liquid solidifies to reduce at least this Seed Layer.
5. the semiconductor crystal wafer manufacture method with lateral protection according to claim 3 is characterized in that wherein applying this macromolecule coating and comprises:
With this wafer support on a carrying container that is full of this macromolecular liquid, so that the main front surface of this of this wafer and rear surface are vertical with the plane of this macromolecular liquid one upper surface, and so that at least a portion of this side does not still make this main front surface of this wafer and at least a portion of rear surface immerse in this macromolecular liquid; And
With this wafer in roughly vertical with this main front surface and rear surface one axially rotation, so that this side Continuous Contact part of this wafer can be dipped into and shift out this macromolecular liquid in this carrying container.
6. the semiconductor crystal wafer manufacture method with lateral protection according to claim 5 is characterized in that when this side Continuous Contact that this macromolecular liquid of wherein hot curing is included in this wafer partly is moved out of this macromolecular liquid in this carrying container this macromolecular liquid on this side Continuous Contact part of hot curing in addition.
7. the semiconductor crystal wafer manufacture method with lateral protection according to claim 1 characterized by further comprising:
After applying the coating of this macromolecule, to electroplate and form this and inlay layer on this wafer, this inlays layer and coats not by this main front surface that this macromolecule layer coated and the part of rear surface.
8. semiconductor crystal wafer manufacturing system with lateral protection is characterized in that it comprises:
One power supply can be connected with the semiconductor wafer, and this wafer has relative main front surface and rear surface, and is linked together by a side, and this wafer can comprise that electroplating one inlays the technique of layer on this wafer;
One macromolecule layer coating system, can this apply this side that a macromolecule is coated this wafer before inlaying layer in plating, but this macromolecule coating puts on this side of this wafer does not put on this main front surface of this wafer and at least a portion of rear surface, and this macromolecule coating is to form a macromolecule layer as preventing that this from inlaying the barrier layer that layer is formed at this side of this wafer;
Wherein this macromolecule layer coating system is to apply this macromolecule layer by the electrophoretic techniques that a power supply drives.
9. the semiconductor crystal wafer manufacturing system with lateral protection according to claim 8; it is characterized in that the width of this macromolecule layer of wherein said this main front surface that puts on this wafer and rear surface between 3～5mm, and this main front surface and rear surface has the radius greater than 3～5mm.
10. the semiconductor crystal wafer manufacturing system with lateral protection according to claim 8 is characterized in that wherein this macromolecule layer coating system comprises:
One pedestal is to contact this wafer, so that but this macromolecule coating puts on this side of this wafer do not put on this main front surface of this wafer and at least a portion of rear surface with a macromolecular liquid; And
One thermal source, this macromolecular liquid of this side of this wafer of hot curing is to form this macromolecule layer.
11. the semiconductor crystal wafer manufacturing system with lateral protection according to claim 10; it is characterized in that this macromolecule layer coating system wherein to apply this macromolecule coating be after forming a thin copper seed layer and electroplating forming this and applying before inlaying layer, and this macromolecule layer coating system also comprises:
One reative cell can seal this wafer to carry out this macromolecule coating of hot curing of this thermal source therein, and this reative cell is the inert gas environment with low-pressure, and is oxidized when this macromolecular liquid solidifies to reduce at least this Seed Layer.
12. the semiconductor crystal wafer manufacturing system with lateral protection according to claim 10 is characterized in that wherein this macromolecule layer coating system also comprises:
Be full of a carrying container of a macromolecular liquid,
Wherein this carrying container has one or more rollers, with with this wafer support on this carrying container, so that the main front surface of this of this wafer and rear surface are vertical with the plane of this macromolecular liquid one upper surface, and so that at least a portion of this side but this main front surface of this wafer and at least a portion of rear surface are immersed in this macromolecular liquid; And
Wherein these one or more rollers make this wafer in an axially rotation vertical with this main front surface and rear surface, so that this side Continuous Contact part of this wafer can be dipped into and shift out this macromolecular liquid in this carrying container.
13. the semiconductor crystal wafer manufacturing system with lateral protection according to claim 12 is characterized in that wherein said thermal source this macromolecular liquid on this side Continuous Contact part of hot curing in addition when this side Continuous Contact of this wafer partly is moved out of this macromolecular liquid in this carrying container.
14. the semiconductor crystal wafer manufacturing system with lateral protection is characterized in that it comprises:
One first board is coated on the semiconductor wafer for applying a macromolecule, this wafer has relative main front surface and rear surface, and linked together by a side, but this macromolecule coating puts on this side of this wafer does not put on this main front surface of this wafer and at least a portion of rear surface, to form a macromolecule layer; And
One second board receives this wafer from this first board, and this second board inlays layer on wafer for electroplating one, and this macromolecule layer is as preventing that this from inlaying the barrier layer that layer is formed at this side of this wafer.
15. semiconductor crystal wafer manufacture method and the system with lateral protection according to claim 14; it is characterized in that wherein putting on the width of this macromolecule layer of this main front surface of this wafer and rear surface side between 3～5mm, and this main front surface and rear surface has the radius greater than 3～5mm.
16. semiconductor crystal wafer manufacture method and the system with lateral protection according to claim 14 is characterized in that wherein said the first board comprises:
One pedestal is to contact this wafer, so that but this macromolecule coating puts on this side of this wafer do not put on this main front surface of this wafer and at least a portion of rear surface with a macromolecular liquid; And
One thermal source, this macromolecular liquid of this side of this wafer of hot curing is to form this macromolecule layer.
17. semiconductor crystal wafer manufacture method and the system with lateral protection according to claim 14; it is characterized in that wherein said the first board to apply the coating of this macromolecule be after forming a thin copper seed layer and electroplating forming this and applying before inlaying layer, and this first board also comprises:
One reative cell can seal this wafer to carry out this macromolecule coating of hot curing of this thermal source therein, and this reative cell is the inert gas environment with low-pressure, and is oxidized when this macromolecular liquid solidifies to reduce at least this Seed Layer.
18. semiconductor crystal wafer manufacture method and the system with lateral protection according to claim 16 is characterized in that wherein said the first board also comprises:
Be full of a carrying container of a macromolecular liquid,
Wherein this carrying container has one or more rollers, with with this wafer support on this carrying container, so that the main front surface of this of this wafer and rear surface are vertical with the plane of this macromolecular liquid one upper surface, and so that at least a portion of this side does not still make this main front surface of this wafer and at least a portion of rear surface immerse in this macromolecular liquid; And
Wherein these one or more rollers make this wafer in an axially rotation vertical with this main front surface and rear surface, so that this side Continuous Contact part of this wafer can be dipped into and shift out this macromolecular liquid in this carrying container.
19. semiconductor crystal wafer manufacture method and the system with lateral protection according to claim 18 is characterized in that wherein said thermal source this macromolecular liquid on this side Continuous Contact part of hot curing in addition when this side Continuous Contact of this wafer partly is moved out of this macromolecular liquid.
20. semiconductor crystal wafer manufacture method and the system with lateral protection according to claim 14 characterized by further comprising:
One the 3rd board, this second board receives this wafer certainly, and the 3rd board is used for cleaning after this plating and dry this wafer; And
One the 4th, the 3rd board receives this wafer certainly, and the 4th board is used for to this wafer annealing.
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| CN107275189A (en) * | 2017-06-29 | 2017-10-20 | 苏州苏纳光电有限公司 | The method that the side of chip four and its side wall are protected during evaporated metal |
| CN107799394A (en) * | 2017-09-26 | 2018-03-13 | 合肥新汇成微电子有限公司 | A kind of guard method of semiconductor crystal wafer |
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| CN101183653A (en) * | 2007-11-14 | 2008-05-21 | 日月光半导体制造股份有限公司 | Wafer structure and forming method thereof |
| CN101201545A (en) * | 2006-12-13 | 2008-06-18 | 中芯国际集成电路制造(上海)有限公司 | Pholithography and wafer forming by the same |
| JP2009267192A (en) * | 2008-04-28 | 2009-11-12 | Mitsubishi Electric Corp | Manufacturing method for semiconductor device and semiconductor manufacturing device |
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| CN101201545A (en) * | 2006-12-13 | 2008-06-18 | 中芯国际集成电路制造(上海)有限公司 | Pholithography and wafer forming by the same |
| CN101183653A (en) * | 2007-11-14 | 2008-05-21 | 日月光半导体制造股份有限公司 | Wafer structure and forming method thereof |
| JP2009267192A (en) * | 2008-04-28 | 2009-11-12 | Mitsubishi Electric Corp | Manufacturing method for semiconductor device and semiconductor manufacturing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107275189A (en) * | 2017-06-29 | 2017-10-20 | 苏州苏纳光电有限公司 | The method that the side of chip four and its side wall are protected during evaporated metal |
| CN107799394A (en) * | 2017-09-26 | 2018-03-13 | 合肥新汇成微电子有限公司 | A kind of guard method of semiconductor crystal wafer |
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