CN103046110B - One prepares monocrystalline Bi 2se 3the method of nanostructure - Google Patents

One prepares monocrystalline Bi 2se 3the method of nanostructure Download PDF

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CN103046110B
CN103046110B CN201110310282.1A CN201110310282A CN103046110B CN 103046110 B CN103046110 B CN 103046110B CN 201110310282 A CN201110310282 A CN 201110310282A CN 103046110 B CN103046110 B CN 103046110B
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nanostructure
furnace
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CN103046110A (en
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唐皓颖
江鹏
王中林
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National Center for Nanosccience and Technology China
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National Center for Nanosccience and Technology China
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Abstract

The invention provides one and prepare monocrystalline Bi 2se 3the method of nanostructure, described Bi 2se 3nanostructure comprises nano belt and nanometer sheet, Bi 2se 3the width of nano belt is 50nm ~ 4 μm, and length is 1 ~ 200 μm, Bi 2se 3the diameter of nanometer sheet is 50nm ~ 20 μm.The present invention adopts high-temperature hot to evaporate and the method for gas phase transmission, with Bi powder and Se powder or Bi 2se 3powder is raw material, carries out thermal evaporation, substrate obtains Bi in high temperature dispersing furnace 2se 3nanostructure.Acquisition Bi of the present invention 2se 3nanostructure is high-quality monocrystal material, and building-up process does not use catalyzer, and avoid and introduce tramp material to the impact of material character, simple, reproducible, raw material and substrate are easy to get, and preparation cost is cheap.

Description

One prepares monocrystalline Bi 2se 3the method of nanostructure
Technical field
The present invention relates to one and prepare monocrystalline Bi 2se 3the method of nanostructure, belongs to the field of semiconductor electronic material and device.
Background technology
Bi 2se 3being the narrow-band semiconductor that energy gap is about 0.3eV, is a kind of traditional thermoelectric material, also for fields such as infrared eyes.The research work of nearest theory and experiment all confirms Bi 2se 3be a kind of topological insulator, have very wide application prospect in the field such as spintronics and quantum computer, therefore cause the extensive concern of whole world Condensed Matter Physics educational circles.In order to realize Bi 2se 3the above-mentioned application of topological insulator, requires to obtain high-quality Bi 2se 3material.At present, Bi 2se 3common material shape has bulk single crystal, film and nano structural material.The concrete grammar of Film synthesis comprises by electrochemical deposition (Mater.Chem.Phys., 55, 51 (1998), Mater.Res.Bull., 36, 1915 (2001)), chemical bath method (Mater.Sci.Eng., B55, 102 (1998)), thermal evaporation (Cryst.Res.Technol.35, 1087 (2000)), reactive evaporation (SolidStateCommun.85, 879 (1993)), compound evaporation (Mater.Res.Bull.40, 1314 (2005), J.Phys.D36, 994 (2003)) and metal-organic chemical vapor deposition equipment (J.Mater.Sci.:Mater.Electron.14, 599 (2003)) etc.At Bi 2se 3in the synthetic method of nanostructure, the existing synthesis of the method by sonochemistry (J.Cryst.Growth, 271,456 (2004)) Bi at present 2se 3zonal structure is (hereinafter referred to as Bi 2se 3nano belt), by solvent thermal (Mater.Res.Bull.34,131 (1999), J.Cryst.Growth, 253,455 (2003)) and metal-organic chemical vapor deposition equipment (J.Phys.Chem.C, 111,18538 (2007)) method synthesis Bi 2se 3sheet structure is (hereinafter referred to as Bi 2se 3nanometer sheet).But, the Bi of what traditional synthetic method obtained is polycrystalline 2se 3, normally in order to meet the needs of thermoelectricity field application, and be not suitable for the requirement of topological insulator for high-quality material.Based on this, people (the Appl.Phys.Lett. such as the people such as Xue Qikun (Appl.Phys.Lett., 97,143118 (2010)) and Wu Kehui, 95,053114 (2009)) use molecular beam epitaxial growth Bi has been developed respectively 2se 3the method of epitaxial film, and obtain some important achievements (NaturePhysics6,584 (2010) based on this, Phys.Rev.Lett., 105,076801 (2010), Phys.Rev.Lett., 105,176602 (2010)).Meanwhile, the people such as Peng Hailin (NanoLett., 10,329-333 (2010)) use gold nano grain as catalyzer, by thermal evaporation Bi in silicon chip substrate 2se 3powder, has developed one by gas-liquid-solid machine-processed catalytic growth Bi 2se 3the method of nanostructure, the pattern such as nano belt and nanometer sheet can be obtained, utilize the character of the large specific surface of nano belt, observed the quantum oscillatory occurences (NatureMaterials that a class is called as Aharonov-Bohm vibration wherein, 9,225-229 (2010)).But, due to Bi 2se 3for laminate structure, allow other impurity to enter between layers, use the tramp materiaies such as gold nano grain to have impact on the purity of material, likely change Bi 2se 3the character of material intrinsic.Such as, by doping Ca, Bi can be regulated 2se 3the position of the Fermi surface of bulk single crystal, can make it change p-type semiconductor material (Phys.Rev.Lett., 103,246601 (2009)) into from n-type semiconductor continuously, but when temperature changes repeatedly, the Bi of doping Ca 2se 3there is unpredictable change in the one-tenth branch of bulk single crystal, is unfavorable for following realization based on Bi 2se 3spintronics and quantum computer device research; In addition, by doped with Cu, the superconductor (Phys.Rev.Lett., 104,057001 (2010)) that superconducting transition temperature is 3.8K can be obtained.These two examples all demonstrate tramp material and can change Bi 2se 3the character of material intrinsic.In order to overcome above-mentioned shortcoming, the method that it may be necessary without catalysis prepares high-quality Bi 2se 3nanostructure.
Summary of the invention
One object of the present invention is to provide one not use catalyzer, prepares a kind of monocrystalline Bi by high-temperature hot evaporation and gas phase transmission 2se 3the method of nanostructure.Another object of the present invention is to provide a kind of high-quality monocrystalline Bi prepared according to described method 2se 3nanostructure.Another object of the present invention is to provide a kind of described monocrystalline Bi 2se 3the purposes of nanostructure.
The object of the invention is to be achieved through the following technical solutions:
On the one hand, the invention provides one and prepare monocrystalline Bi 2se 3the method of nanostructure, wherein, described method with Bi powder and Se powder mixture for raw material or with Bi 2se 3powder is raw material, and preferably, the purity of described raw material is 99.99% (weight ratio), does not use catalyzer, carries out gas phase transmission, prepare Bi by high-temperature hot evaporation on substrate with rare gas element or nitrogen for source of the gas 2se 3nanostructure.
Further, according to aforesaid method, it comprises the following steps:
1) with the Bi powder mixed and Se powder for raw material or with Bi 2se 3powder is raw material, is put on high-temperature resistant container (as the equipment that quartz boat or ceramic boat etc. at high temperature do not react) as growth source;
2) high-temperature resistant container is put into the middle part of high temperature dispersing furnace (if horizontal tube growth furnace etc. is for the equipment of gas phase transmission), in high temperature dispersing furnace, places substrate to collect resultant away from one end of inlet mouth;
3) high temperature dispersing furnace is sealed, vacuumize;
4) in the high temperature dispersing furnace after vacuumizing, rare gas element or nitrogen is passed into as source of the gas to carry out gas phase transmission;
5) while gas phase transmission, high temperature dispersing furnace be heated to certain temperature and be incubated at such a temperature, to carry out high-temperature hot evaporation, now, if raw material is Bi powder and Se powder, then Bi powder and Se powder react in the form of a vapor and generate the Bi of gaseous state under high-temperature hot evaporation 2se 3if raw material is Bi 2se 3powder, then Bi 2se 3powder directly becomes gaseous form under high-temperature hot evaporation, is no matter the Bi of the gaseous state which kind of situation obtains 2se 3capital with the one end away from inlet mouth in gas transmission to high temperature dispersing furnace, i.e. substrate place, the Bi of gaseous state 2se 3crystallization can be formed on the substrate of temperature lower than thermal evaporation temperature, can Bi be obtained in suitable temperature range 2se 3nanostructure;
6), after high-temperature hot evaporation terminates, substrate to room temperature, passes into appropriate rare gas element or nitrogen with high temperature dispersing furnace Temperature fall, and stop gas phase transmission, make the pressure in high temperature dispersing furnace get back to a normal atmosphere, open high temperature dispersing furnace, take out substrate, prepare the Bi of growth on substrate 2se 3nanostructure.
Further, according to aforesaid method, wherein,
The mol ratio of described Bi powder and the mixing of Se powder is 2: 3 ~ 2: 20, according to Bi-Se phasor, when mole number more than 1.5 times of Bi of the mole number of Se, all can obtain Bi 2se 3nanostructure, if from the angle of conservation, can be preferably 2: 3;
Described substrate comprises: monocrystalline silicon piece, on monocrystalline silicon piece, grow SiO by thermal oxidation method 2after the silicon chip that obtains or alumina ceramic plate, be preferably alumina ceramic plate, owing to adopting alumina ceramic plate as substrate, avoid the reaction of Se powder and silicon chip, the powder preparation Bi of simple substance Bi and Se can be used 2se 3nanostructure, because the powder of simple substance Bi and Se compares Bi 2se 3powder more easily obtains, thus has saved cost;
Described substrate in horizontal tube growth furnace with quartz boat distance 5 ~ 15cm, in fact in a comparatively broad warm area, all can obtain Bi 2se 3nanostructure;
The argon gas that described rare gas element is preferably easy to get;
Described step 3) in, vacuumize the pressure of rear horizontal tube growth furnace not higher than 20Pa, be preferably 1Pa;
During described gas phase transmission, the flow passing into gas is 10 ~ 500sccm, is preferably 100sccm, makes the pressure in high temperature dispersing furnace reach 300 ~ 3000Pa, is preferably 500Pa.
During described high-temperature hot evaporation, Heating temperature is 480 ~ 550 DEG C, and be preferably 500 DEG C, soaking time is 0.5 ~ 24h, is preferably 10h.
On the other hand, the invention provides a kind of Bi prepared according to aforesaid method 2se 3nanostructure comprises Bi 2se 3nano belt and Bi 2se 3nanometer sheet, preferably, the width of described nano belt is 50nm ~ 4 μm, and length is 1 ~ 200 μm, described Bi 2se 3the transverse width of nanometer sheet is 50nm ~ 20 μm.
Another aspect, the present invention also provides a kind of described monocrystalline Bi 2se 3nanostructure is as the application of topological insulator in the field such as spintronics and quantum computer.
The invention has the advantages that:
The first, method of the present invention does not use catalyzer, avoids and introduces tramp material to Bi 2se 3the impact of material character, less demanding to carrier gas, less demanding to airshed, simple, reproducible, raw material and substrate are easy to get, and preparation cost is cheap;
The second, Bi prepared by method of the present invention 2se 3nano belt and nanometer sheet are a kind of high-quality monocrystal materials, are expected to obtain important application in topological insulator field.
Accompanying drawing explanation
Describe the present invention below in conjunction with accompanying drawing.
Fig. 1 is the Bi of preparation in embodiment 2 2se 3the X-ray diffractogram of nanostructure and alumina ceramic plate substrate.
Fig. 2 is the Bi prepared on alumina ceramic plate substrate in embodiment 2 2se 3the electron scanning micrograph of nanostructure, wherein, a () is a nano belt standing on substrate, b () and (c) is the partial enlarged drawing of (a), d () is a jagged nano belt, e () is the side-view of a nano belt, (f) is a nanometer sheet.
Fig. 3 is the Bi of preparation in isolated embodiment 2 2se 3the transmission electron microscope photo of nano belt, wherein, a transmission electron microscope photo that () is low power, b () is the energy dispersion X ray spectrum of nano belt in (a), c () is the middle portion of nano belt in (a), c in (), the illustration in the upper left corner is its selected area electron diffraction pattern, (d) is the high resolution transmission electron microscopy photo in corresponding region in (c).
Embodiment
Below in conjunction with embodiment, the present invention is further described in detail, the embodiment provided only in order to illustrate the present invention, instead of in order to limit the scope of the invention.
embodiment 1
The first step, be the Bi powder (purity 99.99% (weight ratio) of 2: 3 by mol ratio, and Se powder (purity 99.99% (weight ratio) AlfaAesa), AlfaAesa) mix, be put on quartz boat (reach peace and open up science and technology) as growth source;
Second step, quartz boat is put into horizontal tube growth furnace (Tianjin Zhong Huan experimental electric furnace company limited, model SK2-4-13) middle part, and in horizontal tube growth furnace distance quartz boat 5 ~ 15cm place and away from inlet mouth one end place monocrystalline silicon piece as substrate to collect resultant;
3rd step, seals horizontal tube growth furnace, vacuumizes, make the pressure of horizontal tube growth furnace reach 1Pa;
4th step, passes into argon gas (purity 99.99% (weight ratio)) with the flow of 50sccm, makes the pressure of horizontal tube growth furnace reach 500Pa in horizontal tube growth furnace;
5th step, is heated to 500 DEG C by horizontal tube growth furnace, and keeps this temperature 5h;
6th step, substrate with horizontal tube growth furnace Temperature fall to room temperature, pass into appropriate argon gas, the pressure of horizontal tube growth furnace is made to get back to a normal atmosphere, open horizontal tube growth furnace, take out substrate, occur atrament at substrate surface, X-ray diffractogram spectrum analysis, scanning electron microscope analysis and tem study are carried out to this material, confirms that the material of growth on substrate is single crystal Bi 2se 3nano belt and nanometer sheet.
embodiment 2
The first step, be the Bi powder (purity 99.99% (weight ratio) of 2: 20 by mol ratio, AlfaAesa) and Se powder (purity 99.99% (weight ratio), AlfaAesa) mix, be put on quartz boat as growth source;
Second step, is put into the middle part of horizontal tube growth furnace by quartz boat, and in horizontal tube growth furnace distance quartz boat 5 ~ 15cm place and away from inlet mouth one end place alumina ceramic plate as substrate to collect resultant;
3rd step, seals horizontal tube growth furnace, vacuumizes, make the pressure of horizontal tube growth furnace reach 1Pa;
4th step, passes into argon gas with the flow of 100sccm in horizontal tube growth furnace, makes the pressure of horizontal tube growth furnace reach 800Pa;
5th step, is heated to 500 DEG C by horizontal tube growth furnace, and keeps this temperature 10h;
6th step, substrate with horizontal tube growth furnace Temperature fall to room temperature, pass into appropriate argon gas, the pressure of horizontal tube growth furnace is made to get back to a normal atmosphere, open horizontal tube growth furnace, take out substrate, occur atrament at substrate surface, X-ray diffractogram spectrum analysis (as shown in Figure 1), scanning electron microscope analysis (as shown in Figure 2) and tem study (as shown in Figure 3) are carried out to this material, confirms that the material of growth on substrate is Bi 2se 3nano belt and nanometer sheet, the material that Fig. 3 (c) and Fig. 3 (d) demonstrates the present embodiment obtained from crystallography angle is single crystal, illustrates that it is high-quality monocrystalline Bi 2se 3structure.
embodiment 3
The first step, by Bi 2se 3powder (purity 99.999% (weight ratio), the prosperous imperial tellurium industry science and technology limited Company in Sichuan) be put on quartz boat as growth source;
Second step, is put into the middle part of horizontal tube growth furnace by quartz boat, and in horizontal tube growth furnace distance quartz boat 5 ~ 15cm place and alumina ceramic plate and grow SiO with thermal oxidation method on monocrystalline silicon piece is placed in one end away from inlet mouth 2after the silicon chip that obtains as substrate to collect resultant;
3rd step, seals horizontal tube growth furnace, vacuumizes, the Schwellenwert making the pressure of horizontal tube growth furnace reach vacuum apparatus to provide;
4th step, passes into nitrogen (purity 99.99% (weight ratio)) with the flow of 50sccm, makes the pressure of horizontal tube growth furnace reach 2000Pa in horizontal tube growth furnace;
5th step, is heated to 550 DEG C by horizontal tube growth furnace, and keeps this temperature 24h;
6th step, substrate with horizontal tube growth furnace Temperature fall to room temperature, pass into appropriate nitrogen, the pressure of horizontal tube growth furnace is made to get back to a normal atmosphere, open horizontal tube growth furnace, take out substrate, X-ray diffractogram spectrum analysis, scanning electron microscope analysis and tem study are carried out to this material, confirm that the material of growth on substrate is Bi 2se 3nano belt and nanometer sheet.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art can make various corresponding change and modification according to the present invention, but these change accordingly and distortion all should belong in the protection domain of the claims in the present invention.

Claims (15)

1. prepare monocrystalline Bi for one kind 2se 3the method of nanostructure, is characterized in that, described method with Bi powder and Se powder mixture for raw material or with Bi 2se 3powder is raw material, does not use catalyzer, carries out gas phase transmission, prepare Bi by high-temperature hot evaporation on substrate with rare gas element or nitrogen for source of the gas 2se 3nanostructure;
Wherein, during described gas phase transmission, the flow passing into source of the gas is 10 ~ 500sccm, makes the pressure in high temperature dispersing furnace reach 300 ~ 3000Pa;
Wherein, during described high-temperature hot evaporation, Heating temperature is 480 ~ 550 DEG C, and soaking time is 0.5 ~ 24h;
Wherein, described nanostructure comprises Bi 2se 3nano belt and Bi 2se 3nanometer sheet.
2. method according to claim 1, is characterized in that, the purity of described raw material is 99.99 % by weight.
3. method according to claim 1, is characterized in that, said method comprising the steps of:
1) with the Bi powder mixed and Se powder for raw material or with Bi 2se 3powder is raw material, is put on high-temperature resistant container as growth source;
2) high-temperature resistant container is put into the middle part of high temperature dispersing furnace, in high temperature dispersing furnace, places substrate to collect resultant away from one end of inlet mouth;
3) high temperature dispersing furnace is sealed, vacuumize;
4) in the high temperature dispersing furnace after vacuumizing, rare gas element or nitrogen is passed into as source of the gas to carry out gas phase transmission;
5) while gas phase transmission, high temperature dispersing furnace be heated to certain temperature and be incubated at such a temperature, to carry out high-temperature hot evaporation, the Bi of gaseous state 2se 3crystallization can be formed on the substrate of temperature lower than thermal evaporation temperature, can Bi be obtained in suitable temperature range 2se 3nanostructure;
6), after high-temperature hot evaporation terminates, substrate to room temperature, passes into appropriate rare gas element or nitrogen with high temperature dispersing furnace Temperature fall, and stop gas phase transmission, make the pressure in high temperature dispersing furnace get back to a normal atmosphere, open high temperature dispersing furnace, take out substrate, prepare the Bi of growth on substrate 2se 3nanostructure.
4. according to the method in any one of claims 1 to 3, it is characterized in that, the mol ratio of described Bi powder and the mixing of Se powder is 2:3 ~ 2:20.
5. method according to claim 4, is characterized in that, the mol ratio of described Bi powder and the mixing of Se powder is 2:3.
6. according to the method in any one of claims 1 to 3, it is characterized in that, described substrate comprises: monocrystalline silicon piece, on monocrystalline silicon piece, grow SiO by thermal oxidation method 2after the silicon chip that obtains or alumina ceramic plate; Described substrate in horizontal tube growth furnace with quartz boat distance 5 ~ 15cm.
7. method according to claim 6, is characterized in that, described substrate is alumina ceramic plate.
8. according to the method in any one of claims 1 to 3, it is characterized in that, described rare gas element is argon gas.
9. method according to claim 3, is characterized in that, described step 3) in, vacuumize the pressure of rear horizontal tube growth furnace not higher than 20Pa.
10. method according to claim 3, is characterized in that, described step 3) in, vacuumize the pressure of rear horizontal tube growth furnace not higher than 1Pa.
11. according to the method in any one of claims 1 to 3, it is characterized in that, during described gas phase transmission, the flow passing into source of the gas is 100sccm.
12. according to the method in any one of claims 1 to 3, it is characterized in that, during described gas phase transmission, makes the pressure in high temperature dispersing furnace reach 500Pa.
13. according to the method in any one of claims 1 to 3, it is characterized in that, described Heating temperature is 500 DEG C.
14. according to the method in any one of claims 1 to 3, it is characterized in that, described soaking time is 10h.
15. according to the method in any one of claims 1 to 3, it is characterized in that, described Bi 2se 3the width of nano belt is 50nm ~ 4 μm, and length is 1 ~ 200 μm, described Bi 2se 3the transverse width of nanometer sheet is 50nm ~ 20 μm.
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103449384B (en) * 2012-05-28 2015-04-01 广东先导稀材股份有限公司 Preparation method of bismuth triselenide
CN103413594B (en) * 2013-08-12 2016-04-20 北京大学 Flexible transparent conductive material of topological insulator and preparation method thereof and application
CN103641079B (en) * 2013-10-21 2015-09-09 东南大学 A kind of preparation method of large-size ultrathin bismuth selenide nanosheet
CN103979505B (en) * 2014-05-16 2015-08-05 厦门大学 A kind of preparation method of minority layer bismuth selenide nanometer sheet
CN104152856B (en) * 2014-07-11 2017-05-31 西南交通大学 A kind of magnetron sputtering method prepares Bi2Se3The method of film
CN106206249B (en) * 2015-06-01 2019-12-06 中国科学院金属研究所 Topological insulator thin film with photovoltaic characteristic and preparation method thereof
CN105288625B (en) * 2015-12-03 2018-04-27 哈尔滨工业大学 A kind of porous Bi2Se3Nanosponges material, its preparation method and application
CN107579151A (en) * 2017-09-22 2018-01-12 苏州鸿凌达电子科技有限公司 A kind of bismuth telluride and/or antimony telluride base thermoelectric film material and preparation method thereof
CN108461382B (en) * 2018-02-06 2020-06-19 天津理工大学 Preparation method for realizing Cu doping of bismuth selenide nano material of topological insulator
CN108423643A (en) * 2018-04-17 2018-08-21 福州大学 A method of bismuth selenide nanometer sheet being prepared in mica substrate by controlling gas flow
CN108467018A (en) * 2018-04-17 2018-08-31 福州大学 A method of preparing bismuth selenide nanometer sheet in mica substrate
CN112323143B (en) * 2020-10-14 2021-12-28 南京理工大学 Method for preparing two-dimensional bismuth oxide nanosheet through chemical vapor deposition
CN114778641B (en) * 2022-03-16 2023-09-19 北京理工大学 Nucleic acid aptamer electrochemical biosensor probe, preparation and application thereof
CN115041677B (en) * 2022-06-24 2024-02-02 湘潭大学 Chemical vapor deposition on mica to generate Bi 2 O 2 Te nano-sheet method
CN115341272B (en) * 2022-08-02 2023-09-15 中山大学 Preparation method of millimeter-level two-dimensional topological material bismuth selenide monocrystal

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit;Yi Zhang et al.;《Nature Physics》;20100613;第6卷;584-588 *
Epitaxial Heterostructures of Ultrathin Topological Insulator Nanoplate and Graphene;Wenhui Dang et al.;《Nano Letters》;20100712;第10卷;2870-2876 *
Few-Layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable hemical Potential;Desheng Kong et al.;《Nano Letters》;20100520;第10卷;2245-2250及supporting information *
Topological Insulator Nanowires and Nanoribbons;Desheng Kong et al.;《Nano Letters》;20091223;第10卷;329-333 *

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