CN103036211A - High-frequency high-pressure high-power switch power source main circuit protective circuit - Google Patents
High-frequency high-pressure high-power switch power source main circuit protective circuit Download PDFInfo
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- CN103036211A CN103036211A CN2012105406760A CN201210540676A CN103036211A CN 103036211 A CN103036211 A CN 103036211A CN 2012105406760 A CN2012105406760 A CN 2012105406760A CN 201210540676 A CN201210540676 A CN 201210540676A CN 103036211 A CN103036211 A CN 103036211A
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Abstract
Provided is an insulated gate bipolar translator (IGBT) driving protective circuit. Input voltage signals are converted through a rectifying circuit, cutting off of IGBT driving is achieved through a comparator circuit, and an indicating function is conducted through a 555 time-delay circuit and a light emitting diode which are connected with the comparator circuit in a series mode.
Description
Affiliated technical field
Patent of the present invention relates to a kind of high-frequency and high-voltage high power switching power supply main-circuit protection for electrostatic precipitation, and this circuit can be applicable to the protection of the drive circuit of IGBT.
Background technology
Therefore the characteristics such as IGBT is as a kind of powerful power electronic device, has input impedance large, and driving power is little, and switching loss is little, and the original paper capacity is large are widely used.IGBT improper use meeting causes serious consequence, so the design of its protective circuit use, also occupies important position in the application of IGBT.
Summary of the invention
In order to solve the protection problem of IGBT, the invention provides the protective circuit of a kind of IGBT, this circuit realizes that when IGBT breaks down IGBT turn-offs.
The technical solution adopted for the present invention to solve the technical problems is: mainly comprise rectification circuit A, comparison circuit B, 555 delay circuit C.
It is characterized in that rectification circuit A output is connected in series the input into comparison circuit B, output is connected to the triggering pin of 555 delay circuits.
When the voltage of passage 1 negative input of LM393 chip is lower than the voltage of passage 1 positive input, passage 1 output high level, protective circuit is failure to actuate, and passage 1 output of LM393 accesses the TRIG pin of 555 delay circuits; When the voltage of passage 1 negative input of LM393 chip is higher than the voltage of passage 1 positive input, passage 1 output low level; 555 timer work, output sends high level and is linked into the IGBT drive circuit, realizes that IGBT turn-offs, simultaneously Light-Emitting Diode work.
Effect of the present invention be common IGBT protective circuit when the pulse spike of short time appears in circuit, the protective circuit action; The present invention has eliminated the misoperation that causes owing to current spike, so that more reliable.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is circuit theory schematic diagram of the present invention.
Embodiment
The IGBT Drive Protecting Circuit as shown in Figure 1, comprises rectification circuit A, comparison circuit B, 555 delay circuit C.Its concrete connected mode is that rectification circuit A is in parallel with the RC circuit, and output is connected to LM393 passage 1 negative input of comparison circuit B, and passage 1 output pin of LM393 is connected to the triggering pin of 555 delay circuit C.555 output pin connects the base stage of triode, and Light-Emitting Diode is connected with resistance, is connected to the emitter of triode.
When extraneous signal by rectification circuit, be connected to passage 1 negative input end of LM393, compare with the positive input terminal of passage 1, when the extraneous signal voltage that receives was lower than passage 1 positive input terminal voltage, comparator circuit A exported high level; 555 delay circuit trigger ends receive this high signal, and 555 timers do not move, and the IGBT drive circuit is normal; When the extraneous signal voltage that receives is higher than passage 1 positive input terminal voltage, comparator circuit B output low level; 555 delay circuit trigger ends receive this low level signal, and 555 timers move, and the output pin of 555 timers feeds back to the IGBT drive circuit with output voltage, turn-off IGBT drive circuit master chip, realize the shutoff of IGBT, pilot light is sent in simultaneously Light-Emitting Diode action.
Claims (4)
1.IGBT Drive Protecting Circuit is characterized in that: can when the IGBT drive circuit breaks down, realize fast the shutoff of IGBT.
2. IGBT Drive Protecting Circuit according to claim 1, its further feature is: change the voltage signal of input by rectification circuit, comparator circuit is realized the shutoff of IGBT drive circuit.
3. IGBT Drive Protecting Circuit according to claim 1, its further feature are passage 1 negative input end voltage when comparator circuit during less than passage 1 positive input terminal voltage, and protective circuit is failure to actuate.
4. nonpolarity 485 communication chips according to claim 1, its further feature is that passage 1 negative input end voltage when comparator circuit is during greater than passage 1 positive input terminal voltage, comparator circuit work, voltage signal is fed back to the IGBT drive circuit, realize the shutoff of IGBT, simultaneously Light-Emitting Diode work plays indicative function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105406760A CN103036211A (en) | 2012-12-14 | 2012-12-14 | High-frequency high-pressure high-power switch power source main circuit protective circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012105406760A CN103036211A (en) | 2012-12-14 | 2012-12-14 | High-frequency high-pressure high-power switch power source main circuit protective circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103036211A true CN103036211A (en) | 2013-04-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012105406760A Pending CN103036211A (en) | 2012-12-14 | 2012-12-14 | High-frequency high-pressure high-power switch power source main circuit protective circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN103036211A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0487964A2 (en) * | 1990-11-29 | 1992-06-03 | Siemens Aktiengesellschaft | Circuit arrangement for protecting a field-effect-controlled semiconductor against overload |
| CN102005718A (en) * | 2009-08-31 | 2011-04-06 | 比亚迪股份有限公司 | Protector for electronic load and electronic load system |
| CN102664579A (en) * | 2012-04-17 | 2012-09-12 | 燕山大学 | Control device of electromagnetic brake |
-
2012
- 2012-12-14 CN CN2012105406760A patent/CN103036211A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0487964A2 (en) * | 1990-11-29 | 1992-06-03 | Siemens Aktiengesellschaft | Circuit arrangement for protecting a field-effect-controlled semiconductor against overload |
| CN102005718A (en) * | 2009-08-31 | 2011-04-06 | 比亚迪股份有限公司 | Protector for electronic load and electronic load system |
| CN102664579A (en) * | 2012-04-17 | 2012-09-12 | 燕山大学 | Control device of electromagnetic brake |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| DD01 | Delivery of document by public notice |
Addressee: Nanjing Lawrence Electronic Co., Ltd,. Document name: the First Notification of an Office Action |
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| DD01 | Delivery of document by public notice |
Addressee: Nanjing Lawrence Electronic Co., Ltd,. Document name: Notification that Application Deemed to be Withdrawn |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130410 |