CN103035708B - 一种半导体结构及其制造方法 - Google Patents
一种半导体结构及其制造方法 Download PDFInfo
- Publication number
- CN103035708B CN103035708B CN201110297623.6A CN201110297623A CN103035708B CN 103035708 B CN103035708 B CN 103035708B CN 201110297623 A CN201110297623 A CN 201110297623A CN 103035708 B CN103035708 B CN 103035708B
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- source
- semiconductor fin
- drain
- fin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110297623.6A CN103035708B (zh) | 2011-09-30 | 2011-09-30 | 一种半导体结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110297623.6A CN103035708B (zh) | 2011-09-30 | 2011-09-30 | 一种半导体结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103035708A CN103035708A (zh) | 2013-04-10 |
CN103035708B true CN103035708B (zh) | 2015-11-25 |
Family
ID=48022415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110297623.6A Active CN103035708B (zh) | 2011-09-30 | 2011-09-30 | 一种半导体结构及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103035708B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6812119B1 (en) * | 2003-07-08 | 2004-11-02 | Advanced Micro Devices, Inc. | Narrow fins by oxidation in double-gate finfet |
CN1577850A (zh) * | 2003-06-27 | 2005-02-09 | 英特尔公司 | 有部分或全包围栅电极的非平面半导体器件及其制造方法 |
CN101068029A (zh) * | 2007-06-05 | 2007-11-07 | 北京大学 | 一种双鳍型沟道双栅多功能场效应晶体管及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7879659B2 (en) * | 2007-07-17 | 2011-02-01 | Micron Technology, Inc. | Methods of fabricating semiconductor devices including dual fin structures |
-
2011
- 2011-09-30 CN CN201110297623.6A patent/CN103035708B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1577850A (zh) * | 2003-06-27 | 2005-02-09 | 英特尔公司 | 有部分或全包围栅电极的非平面半导体器件及其制造方法 |
US6812119B1 (en) * | 2003-07-08 | 2004-11-02 | Advanced Micro Devices, Inc. | Narrow fins by oxidation in double-gate finfet |
CN101068029A (zh) * | 2007-06-05 | 2007-11-07 | 北京大学 | 一种双鳍型沟道双栅多功能场效应晶体管及其制备方法 |
Non-Patent Citations (1)
Title |
---|
新结构MOSFET;林钢,徐秋霞;《微电子学》;20031231;第33卷(第6期);第527-531页 * |
Also Published As
Publication number | Publication date |
---|---|
CN103035708A (zh) | 2013-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11855210B2 (en) | Method for fabricating a strained structure and structure formed | |
KR101729439B1 (ko) | 매립된 절연체층을 가진 finfet 및 그 형성 방법 | |
KR101670558B1 (ko) | 변형 생성 채널 유전체를 포함하는 비평면 디바이스 및 그 형성방법 | |
US20190123180A1 (en) | Integrated Circuit Structure with Substrate Isolation and Un-Doped Channel | |
US9748388B2 (en) | Method of forming strained structures of semiconductor devices | |
US10868012B2 (en) | Semiconductor device and manufacturing method thereof | |
EP3312876A1 (en) | Finfet device and fabrication method thereof | |
KR20150021448A (ko) | 실리콘 및 실리콘 게르마늄 나노와이어 형성 | |
KR101946765B1 (ko) | 반도체 디바이스 및 그 제조 방법 | |
US20110079856A1 (en) | Strained structure of semiconductor device | |
US8921171B2 (en) | Method for forming gate structure, method for forming semiconductor device, and semiconductor device | |
US20120098065A1 (en) | Low resistance ldmos with reduced gate charge | |
CN107046056B (zh) | 鳍式场效应晶体管制造方法 | |
CN103035708B (zh) | 一种半导体结构及其制造方法 | |
EP3291291B1 (en) | Semiconductor device and fabrication method thereof | |
CN108155100B (zh) | 半导体器件的形成方法 | |
US20140015062A1 (en) | Method for Forming Gate Structure, Method for Forming Semiconductor Device, and Semiconductor Device | |
CN103035577A (zh) | 一种半导体结构及其制造方法 | |
CN103050524B (zh) | 一种双鳍型半导体结构及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NMC Co.,Ltd. Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190222 Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Wenchang Road 8 Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |