CN103022598A - Millimeter wave filter and substrate structure for forming same - Google Patents
Millimeter wave filter and substrate structure for forming same Download PDFInfo
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- CN103022598A CN103022598A CN2011102803491A CN201110280349A CN103022598A CN 103022598 A CN103022598 A CN 103022598A CN 2011102803491 A CN2011102803491 A CN 2011102803491A CN 201110280349 A CN201110280349 A CN 201110280349A CN 103022598 A CN103022598 A CN 103022598A
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Abstract
The invention provides a millimeter wave filter and a substrate structure for forming the same, which can be applied to the CMOS (Complementary Metal-Oxide-Semiconductor Transistor) manufacture procedure technology, wherein effective high impedance isolation between a resonant assembly or a filter circuit is provided; the quality factor of the resonant circuit is improved; and the application field of the millimeter wave filter is expanded and the economic benefit thereof is improved by means of the low cost advantage of the CMOS manufacture procedure.
Description
Technical field
The present invention relates to the design of a kind of CMOS integrated circuit technique and radio frequency integrated circuit, espespecially a kind of integrated circuit substrate technology and millimeter wave filter design that promotes resonant circuit quality factor (Q).
Background technology
The now application of millimeter wave transmission technology is quite extensive, and such as the application of the high speed short-distance wireless PAN (Personal Area Network) (WPAN) of 60GHz, the car radar application of 76-77GHz etc. is provided.Research in other potential application also increases day by day for millimeter wave at present, such as commerce, science and medical use.The demand of this respect has caused that industry is for a large amount of inputs of research and development low cost, high efficiency, small size millimetre integrated circuit.
And the wireless system that is operated in millimeter wave frequency band has proposed to be different from the specific (special) requirements of traditional low frequency component design for the design of antenna and radio frequency component.Radio frequency band filter is the key of modern wireless communication systems.This filter can guarantee communication system can other use to use or the frequency range of being forbidden by radio regulator on signal transmission.
Along with communication system develops into millimeter wave frequency band, it is less than the size of typical CMOS chip that the physical size of radio frequency component becomes.Therefore, the possibility that wireless transceiver system is implemented in the CMOS chip greatly increases, and further promotes the development of system (System in a package) in system-on-a-chip (System on chip) or the encapsulation.
Yet, the passive block of CMOS processing procedure (inactive element) also exists high-power distortion and the higher shortcoming of noise factor, so the now design of filter still avoids directly making passive filter (inactive filter) on CMOS technique, its reason is, larger technical error causes the unstable of performance, and the strict design rule of chip foundries, the high loss of the silicon base that causes, usefulness is low, the quality factor (Q value) of the resonator of making is relatively poor.Therefore, the overwhelming majority's passive filter all adopts substrate or the process technique with higher resistance at present.
Therefore, how to propose in a kind of CMOS of can be applicable to process technique, can avoid simultaneously the underlying structure of nonlinear effect that the high conductivity of CMOS silicon base causes and the impact of distorted signals, real is the technical problem that present all circles desire most ardently solution.
Summary of the invention
Because the shortcoming of above-mentioned prior art, the underlying structure that main purpose of the present invention is to provide a kind of millimeter wave filter and is used to form millimeter wave filter, can provide the effective high impedance between resonant component or filter circuit isolated, promote the resonant circuit quality factor.
The underlying structure that is used to form millimeter wave filter provided by the present invention comprises: the conductive substrates that is consisted of and had first surface and second surface by semi-conducting material; Be arranged at the bottom high impedance layer on the first surface of this conductive substrates; And be arranged on the first surface of this conductive substrates and around the outside high impedance layer of this bottom high impedance layer, wherein, have the gap between this outside high impedance layer and this bottom high impedance layer.
In addition, the present invention also provides a kind of manufacturing to be used to form the method for the underlying structure of millimeter wave filter, comprising: formation is consisted of and is had the conductive substrates of first surface and second surface by semi-conducting material; The bottom high impedance layer is set on the first surface of this conductive substrates; And in arrange on the first surface of this conductive substrates around the outside high impedance layer of this bottom high impedance layer and should the outside high impedance layer and this bottom high impedance layer between have the gap.
In addition, the present invention provides again a kind of millimeter wave filter, comprise: two tortuous hair clip shape resonators, the mode relative with opening arranges, wherein, respectively should be formed by transmission line all respectively by complications hair clip shape resonator, this transmission line comprises main transmission line section and two side transmission line section, these two side transmission line section are extended toward same direction from the two-end-point of this main transmission line section respectively, and these two side transmission line section form respectively at least one meander region, make between these two side transmission line section in this meander region apart from constriction to the first spacing, and this first spacing is less than the length of this main transmission line section; Two step impedance hair clip shape resonators, respectively this step impedance hair clip shape resonator is separately positioned on the opening of these two tortuous hair clip shape resonators, and respectively with this side transmission line section coupling of corresponding tortuous hair clip shape resonator; The first load point is arranged on the end points of this main transmission line section that one of them should complications hair clip shape resonator; And second load point, be arranged at this main transmission line section that another should complications hair clip shape resonator away on should an end points of the first load point.
Compared to prior art, the present invention not only can overcome induction vortex current that the conductivity of conductive substrates causes and the signal coupling between the different resonant component, effectively reach the effect that promotes the resonator quality factor, reduce nonlinear effect and distorted signals, also can utilize simultaneously and select suitable resonator types and parameter optimization, promote quality factor and the frequency band selection effect of signal transmitting bandwidth millimeter wave filter, the millimeter wave filter design level that further will use whereby the CMOS integrated circuit technique is promoted to from generation to generation next.
Description of drawings
Fig. 1 is the stereogram of schematically describing to be used to form the underlying structure of millimeter wave filter according to the embodiment of the invention;
Fig. 2 is the top view of schematically describing to be used to form the underlying structure of millimeter wave filter according to the embodiment of the invention;
Fig. 3 is the circuit layout of schematically describing step impedance hair clip shape resonator according to the embodiment of the invention;
Fig. 4 is the circuit layout of schematically describing tortuous hair clip shape resonator according to the embodiment of the invention;
Fig. 5 is the circuit layout of schematically describing millimeter wave filter according to the embodiment of the invention;
Fig. 6 is for the test result of transmission response and the reflection loss of describing millimeter wave filter shown in Figure 5; And
Fig. 7 is for the test result of the passband group delay of describing millimeter wave filter shown in Figure 5.
The primary clustering symbol description
100 underlying structures
102 conductive substrates
104a bottom high impedance layer
The outside high impedance layer of 104b
106 millimeter wave filters
The 108a load point
The 108b load point
30 step impedance hair clip shape resonators
315 openings
316 main transmission line section
316a side transmission line section
316b side transmission line section
40 tortuous hair clip shape resonators
405 openings
406 main transmission line section
406a side transmission line section
406b side transmission line section
406c side transmission line section
406d side transmission line section
50 millimeter wave filters
502 conductive substrates
The tortuous hair clip shape of 506A resonator
The tortuous hair clip shape of 506B resonator
The 508a load point
The 508b load point
516A step impedance hair clip shape resonator
516B step impedance hair clip shape resonator
The S11 curve
The S21 curve
The GD curve.
Embodiment
Below by particular specific embodiment technology contents of the present invention is described, the personage who is familiar with this skill can understand other advantage of the present invention and effect easily by content disclosed in the present specification.The present invention also can be implemented or be used by other different specific embodiment, and the every details in this specification also can based on different viewpoints and application, be carried out various modifications and change under not departing from spirit of the present invention.
Notice, the appended graphic structure that illustrates of this specification, ratio, size etc., equal contents in order to cooperate specification to disclose only, understanding and reading for the personage who is familiar with this skill, be not to limit the enforceable qualifications of the present invention, so technical essential meaning of tool not, the adjustment of the modification of any structure, the change of proportionate relationship or size, not affecting under the effect that the present invention can produce and the purpose that can reach, all should still drop on disclosed technology contents and get in the scope that can contain.Simultaneously, that quotes in this specification reaches terms such as " one " such as " first ", " second ", " mainly ", " side ", " outside ", " bottom ", also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under without essence change technology contents, also ought be considered as the enforceable category of the present invention.
See also Fig. 1, show the stereogram of the underlying structure that is used to form millimeter wave filter 106 100 of the embodiment of the invention.As shown in the figure, this underlying structure 100 comprises conductive substrates 102, bottom high impedance layer 104a and outside high impedance layer 104b.In addition, this underlying structure 100 can additionally comprise millimeter wave filter 106, the first load point 108a and the second load point 108b that is arranged on the high impedance layer 104a of this bottom.
This conductive substrates 102 be by semi-conducting material (such as materials such as silicon, Si oxide, nitride or polyimides) formation, have upper surface and lower surface.
This bottom high impedance layer 104a is arranged on the upper surface of this conductive substrates 102.In embodiments of the invention, this bottom high impedance layer 104a be by for example multiple layer metal material and multi-layer insulation (such as Si oxide, nitride or polyimides) mutually storehouse or alternately storehouse consist of.Similarly, should realize, can be otherwise or combination of materials consist of this bottom high impedance layer 104a.
Outside high impedance layer 104b also is arranged on the upper surface of this conductive substrates 102, and with a preset distance around this bottom high impedance layer 104a (having the gap between outside high impedance layer 104b and bottom high impedance layer 104a).This outside high impedance layer 104b intercepts in this bottom high impedance layer 104a and millimeter wave filter 106 formed thereon, the periphery of the first load point 108a, the second load point 108b, can effectively reduce other resonant circuit and pass through these conductive substrates 102 formed coupling effects.Therefore, based on this bottom high impedance layer 104a and this outside high impedance layer 104b, can on CMOS integrated circuit conductive substrates, mark off many zones, each zone all can be provided with resonator or filter circuit, and the isolated effect of high impedance that provides by this bottom high impedance layer 104a and this outside high impedance layer 104b, so will and adjacent or non-adjacent resonator or filter circuit between the bad coupling effect that produces by conductive substrates minimize.
See also Fig. 2, show the top view of the underlying structure that is used to form millimeter wave filter 106 100 of the embodiment of the invention.As shown in the figure, be formed with this bottom high impedance layer 104a and this outside high impedance layer 104b on the conductive substrates 102 of this underlying structure 100, be formed with again millimeter wave filter 106 on the high impedance layer 104a of this bottom, the first load point 108a and the second load point 108b, and should provide high impedance to completely cut off effect to this bottom high impedance layer 104a and the external world by outside high impedance layer 104b, so that the extraneous electromagnetic coupled that produces through this conductive substrates 102 obviously reduces, and then avoid producing un-desired induction vortex current, promote the quality factor (Q) of resonator assembly or filter assembly.
What this must illustrate be, in disclosed all embodiment of the present invention, the turnover of the what is called of transmission line section and right angle refer to the variation of the trend of transmission line section, are not to mean the transmission line section turning to be necessary for the right angle turnover.In addition, in order to reduce the consume of signal on the transmission line section, disclosed all embodiment of the present invention all adopt the corner mode of cutting sth. askew of 45 degree in the transmission line section turning.
For example, in order to reduce coupling harmful between non-adjacent (or adjacent) resonator and to reduce the induction vortex current that produces as far as possible, the conductive substrates (such as conductive substrates 102) of indivedual resonators (or filter) below can be divided into a plurality of high impedance areas.In present embodiment, be that high impedance screen (bottom high impedance layer 104a) is set below different resonator assemblies, the bounding box (such as outside high impedance layer 104b) of a high impedance also additionally is set around whole circuit layout simultaneously.Can obviously reduce by conductive substrates 102 formed harmful coupling effects by above-mentioned design, reach the purpose of the quality factor (Q) that promotes resonator assembly or filter assembly.
What must propose explanation especially is that this bottom high impedance layer 104a is not so-called ground plane on the general circuit design, but is arranged at the ground plane below of circuit itself, is used for providing between circuit and conductive substrates 102 high impedance isolated.This bottom high impedance layer 104a be arranged on circuit layout under (namely circuit itself is for the responsive especially zone of capacitance coupling effect), high-impedance behavior is provided.Thus, can and high impedance isolated (such as bottom high impedance layer 104a) be set between different conductive substrates zones by the non-coupling regime that the large tracts of land conductive substrates is divided into many small sizes, so that the harmful coupling effect that produces by substrate or conductive substrates (silicon conductive substrates) between non-adjacent or adjacent resonator is minimized, reduce simultaneously the generation of un-desired induction vortex current.
In addition, the present invention also proposes a kind of millimeter wave filter, can implement with the underlying structure that forms millimeter wave filter based on the above-mentioned CMOS of being applied to integrated circuit technique.Millimeter wave filter proposed by the invention is a kind of quadravalence cross-coupled filter, and this filter is made of two tortuous hairpin resonators and two step impedance hair clip shape resonators (stepped-impedance hairpin resonator).
See also Fig. 3, it is used for schematically showing the circuit layout of the step impedance hair clip shape resonator 30 that the embodiment of the invention adopts.As shown in the figure, this step impedance hair clip shape resonator 30 comprises main transmission line section 316 and two side transmission line section 316a, 316b, these two side transmission line section 316a, 316b extend in parallel toward same direction from the two-end-point of this main transmission line section 316 respectively, and flexing forms opening 315.
Then see also Fig. 4, it is used for schematically showing the circuit layout of the tortuous hair clip shape resonator 40 that the embodiment of the invention adopts.As shown in the figure, this complications hair clip shape resonator 40 comprises main transmission line section 406 and two side transmission line section 406a, 406b, these two side transmission line section 406a, the 406b respectively past same direction of two-end-point of oneself this main transmission line section 406 extends in parallel and forms right angles with this main transmission line section 406, and these two side transmission line section 406a, 406b forms respectively a meander region and makes two line segment 406a, constriction (so that these two side transmission line section 406c occur in the distance between 406b in the stage casing, distance between 406d is less than the length of this main transmission line section 406), and continue to run parallel to terminal with the spacing of this process constriction, and form open end 405.
Then see also Fig. 5, schematically show the circuit layout of the millimeter wave filter 50 of the embodiment of the invention.As shown in the figure, this millimeter wave filter 50 is formed on the conductive substrates 502 (perhaps bottom high impedance layer), be a kind of quadravalence cross-coupled filter, consisted of by two step impedance hair clip shape resonator 516A, 516B (as shown in Figure 3 person) and two tortuous hair clip shape resonator 506A, 506B (as shown in Figure 4 person).First and second load point 508a, 508b be arranged at respectively to should two tortuous hair clip shape resonator 506A, 506B mutually away from end points on, in order to FD feed.
These two tortuous hair clip shape resonator 506A, 506B arrange in the relative mode of opening, and both spacing distances are S
eThese two step impedance hair clip shape resonator 516A, 516B arrange in the mode that opening deviates from mutually, and both spacing distances are S
mAs shown in the figure, the side transmission line section of this step impedance hair clip shape resonator 516A and the side transmission line section of this complications hair clip shape resonator 506A are coupled mutually, and both spacing distances are S
x
Because the high loss characteristic of the silicon base of typical CMOS process technique, so that the part low impedance value transmission line in the coupled transmission line may produce larger capacitance coupling effect by substrate (or conductive substrates).Thus, may cause the increase of loss.Therefore, can obtain the highest quality factor in order to make such as Fig. 3 to resonator or filter shown in Figure 5, the micro that keeps simultaneously size below provides respectively the step impedance hair clip shape resonator 30 of implementing about preferred embodiment of the present invention, tortuous hair clip shape resonator 40, and the related physical size of millimeter wave filter 50.
l
1＝250μm，l
2＝210μm，l
3＝111.1μm
l
c＝140μm，g＝5μm
D
1＝461.2μm，D
2＝335.2μm，D
3＝60μm，D
4＝221.4μm
S
e＝21.70μm，S
m＝5.57μm，S
x＝5.87μm，t＝222μm
According to above-mentioned related physical size, can obtain the dependence test result of millimeter wave filter 50, see also Fig. 6 and Fig. 7.
As shown in Figure 6, describe the test result of transmission response and the reflection loss of millimeter wave filter 50.Curve S 21 represents the transmission response of this millimeter wave filter 50, is presented at the frequency range (or passband (pass band)) that has about 8.5GHz in the scope of frequency 50GHz-70GHz.In addition, curve S 11 represents the reflection loss of this millimeter wave filter 50, is presented to have in the scope of 50GHz-70GHz to be better than-reflection loss of 10dB.
As shown in Figure 7, describe the test result of the passband group delay (group delay) of millimeter wave filter 50.Curve GD shows that the distribution of group delay on frequency domain (frequency domain) of this millimeter wave filter 50 is quite average, and group delay roughly is lower than 650ps in overall passband.
In sum, the underlying structure that is used to form millimeter wave filter of the present invention can be applied in the CMOS process technique, by high impedance layer is set between resonant component, effectively reduce the induction vortex current that causes because of silicon conductive substrates conductivity and the signal coupling between formed resonant component, significantly promote resonator or filter quality factor, can utilize simultaneously the suitable resonator types of selection and parameter optimization in conjunction with the design of above-mentioned high impedance layer, promote quality factor and the frequency band selection effect of signal transmitting bandwidth millimeter wave filter.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not is used for restriction the present invention.Any personage who has the knack of this skill all can be under spirit of the present invention and category, and above-described embodiment is modified and changed.Therefore, the scope of the present invention should be listed such as claims.
Claims (12)
1. underlying structure that is used to form millimeter wave filter comprises:
Conductive substrates is made of semi-conducting material, has first surface and second surface;
The bottom high impedance layer is arranged on the first surface of this conductive substrates; And
Outside high impedance layer is arranged on the first surface of this conductive substrates, and around this bottom high impedance layer.
2. the underlying structure that is used to form millimeter wave filter according to claim 1 is characterized in that, this conductive substrates is made of silicon, Si oxide, nitride or polyimide material.
3. the underlying structure that is used to form millimeter wave filter according to claim 1 is characterized in that, this base structure also comprises the millimeter wave filter that is arranged on this bottom high impedance layer.
4. the underlying structure that is used to form millimeter wave filter according to claim 3 is characterized in that, this millimeter wave filter comprises:
Two tortuous hair clip shape resonators, the mode relative with opening arranges, wherein, respectively should be formed by transmission line all respectively by complications hair clip shape resonator, this transmission line comprises main transmission line section and two side transmission line section, these two side transmission line section are extended toward same direction from the two-end-point of this main transmission line section respectively, and these two side transmission line section form respectively at least one meander region, make between these two side transmission line section in this meander region apart from constriction to the first spacing, and this first spacing is less than the length of this main transmission line section;
Two step impedance hair clip shape resonators, respectively this step impedance hair clip shape resonator is separately positioned on the opening of these two tortuous hair clip shape resonators, and is coupled with corresponding this side transmission line section respectively;
The first load point is arranged on the end points of this main transmission line section that one of them should complications hair clip shape resonator; And
The second load point is arranged at this main transmission line section that another should complications hair clip shape resonator away on should an end points of the first load point.
5. the underlying structure that is used to form millimeter wave filter according to claim 1 is characterized in that, this bottom high impedance layer is to be formed by multiple layer metal material and multi-layer insulation storehouse.
6. the underlying structure that is used to form millimeter wave filter according to claim 5 is characterized in that, this insulating material is Si oxide, nitride or polyimides.
7. a manufacturing is used to form the method for the underlying structure of millimeter wave filter, comprising:
The conductive substrates that formation is made of semi-conducting material, wherein, this conductive substrates has first surface and second surface;
The bottom high impedance layer is set on the first surface of this conductive substrates; And
On this first surface of this conductive substrates outside high impedance layer is set, wherein, this outside high impedance layer is around this bottom high impedance layer.
8. manufacturing according to claim 7 is used to form the method for the underlying structure of millimeter wave filter, it is characterized in that, the method also is included on this bottom high impedance layer millimeter wave filter is set.
9. manufacturing according to claim 7 is used to form the method for the underlying structure of millimeter wave filter, it is characterized in that, this conductive substrates is by silicon, Si oxide, and nitride or polyimide material consist of.
10. manufacturing according to claim 7 is used to form the method for the underlying structure of millimeter wave filter, it is characterized in that, this bottom high impedance layer is made of multiple layer metal material and multi-layer insulation storehouse alternate with each other.
11. manufacturing according to claim 10 is used to form the method for the underlying structure of millimeter wave filter, it is characterized in that, this insulating material is Si oxide, nitride or polyimides.
12. a millimeter wave filter comprises:
Two tortuous hair clip shape resonators, the mode relative with opening arranges, wherein, respectively should be formed by transmission line all respectively by complications hair clip shape resonator, this transmission line comprises main transmission line section and two side transmission line section, these two side transmission line section are extended toward same direction from the two-end-point of this main transmission line section respectively, and these two side transmission line section form respectively at least one meander region, make between these two side transmission line section in this meander region apart from constriction to the first spacing, and this first spacing is less than the length of this main transmission line section;
Two step impedance hair clip shape resonators, respectively this step impedance hair clip shape resonator is separately positioned on the opening of these two tortuous hair clip shape resonators, and respectively with this side transmission line section coupling of corresponding tortuous hair clip shape resonator;
The first load point is arranged on the end points of this main transmission line section that one of them should complications hair clip shape resonator; And
The second load point is arranged at this main transmission line section that another should complications hair clip shape resonator away on should an end points of the first load point.
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| CN2011102803491A CN103022598A (en) | 2011-09-20 | 2011-09-20 | Millimeter wave filter and substrate structure for forming same |
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| CN2011102803491A CN103022598A (en) | 2011-09-20 | 2011-09-20 | Millimeter wave filter and substrate structure for forming same |
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| CN201410315933.XA Division CN104103878A (en) | 2011-09-20 | 2011-09-20 | Millimeter wave filter |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5187460A (en) * | 1990-03-09 | 1993-02-16 | Tekelec Airtronic | Microstrip line resonator with a feedback circuit |
| US20050088258A1 (en) * | 2003-10-27 | 2005-04-28 | Xytrans, Inc. | Millimeter wave surface mount filter |
| WO2010034049A1 (en) * | 2008-09-23 | 2010-04-01 | National Ict Australia Limited | Millimetre wave bandpass filter on cmos |
-
2011
- 2011-09-20 CN CN2011102803491A patent/CN103022598A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5187460A (en) * | 1990-03-09 | 1993-02-16 | Tekelec Airtronic | Microstrip line resonator with a feedback circuit |
| US20050088258A1 (en) * | 2003-10-27 | 2005-04-28 | Xytrans, Inc. | Millimeter wave surface mount filter |
| WO2010034049A1 (en) * | 2008-09-23 | 2010-04-01 | National Ict Australia Limited | Millimetre wave bandpass filter on cmos |
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Application publication date: 20130403 |