CN103021563A - Preparation method of Nb3Sn superconductive bulk - Google Patents
Preparation method of Nb3Sn superconductive bulk Download PDFInfo
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- CN103021563A CN103021563A CN2012105009183A CN201210500918A CN103021563A CN 103021563 A CN103021563 A CN 103021563A CN 2012105009183 A CN2012105009183 A CN 2012105009183A CN 201210500918 A CN201210500918 A CN 201210500918A CN 103021563 A CN103021563 A CN 103021563A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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- Inorganic Compounds Of Heavy Metals (AREA)
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Abstract
The invention aims to overcome the deficiencies of performance of current Nb3Sn superconductive materials, and provides a preparation method of an Nb3Sn superconductive bulk with high performance. The method comprises the steps of: preparing and uniformly mixing Nb powder, Sn powder and nano Si/N/C powder according to molar ratio of (0.8-0.975):(1.8-1.95)(0.025-0.2); tabletting the raw material powder uniformly mixed by a tabletting machine to obtain a Nb3Sn superconductive bulk containing nano Si/N/C powder; and placing the obtained bulk in a vacuum furnace, filling argon after vacuumizing, and insulating for 1.5-3h at 500-800 DEG C to finally obtain the Nb3Sn superconductive material containing Si and C elements.
Description
Technical field
The present invention relates to a kind of preparation method of superconductor, relate in particular to a kind of Nb
3The preparation method of Sn superconduction block material.
Background technology
Nb
3Sn is the highest intermetallic compound superconductor of the critical transition temperature of present practical application.Higher transition temperature, larger coherence length, higher upper critical field, crystal boundary do not exist weak connection, the advantage such as simple in structure, with low cost to make Nb
3Sn becomes at present the most frequently used superconductor.Particularly in a low field, as at magnet for magnetic resonant imaging application facet, Nb
3Sn has showed great advantage.Yet, the Nb for preparing at present
3It is also lower that the critical current density of Sn material and cryogenic superconductor are compared with the A15 superconductor, and can rapid the reducing along with the increase of magnetic field intensity.
Improve Nb
3The critical current density of Sn is a difficult problem of this area, because will produce the electronics vortex during by superconductor when electric current, and the motion consumed energy of electronics vortex, and then destroy the superconduction ability of material.If vortex can be pinned on impurity or the defective and not affect flowing of without hindrance electric current, can greatly improve critical current density.Therefore, in order to improve Nb
3The critical current density of Sn under certain magnetic field can adopt the methods such as neutron bombardment, chemical corrosion, machining, doping, and since mix have easier fast, can carry out the characteristics such as even modification, become present raising Nb
3The main method of Sn flux pinning ability.
Summary of the invention
The objective of the invention is in order to overcome existing Nb
3The deficiency of Sn superconductor performance provides a kind of high performance Nb that has
3The preparation method of Sn superconduction block material.
Nb of the present invention
3The preparation method of Sn superconduction block material comprises the steps:
With the Nb powder, Sn powder, nanometer Si/N/C powder are according to mol ratio (0.8-0.975): (1.8-1.95): (0.025-0.2) prepare and mix, the raw meal that mixes is carried out compressing tablet with tablet press machine, obtain containing the Nb of nanometer Si/N/C powder
3The Sn superconduction block material; The bulk that obtains is placed in the vacuum furnace, is filled with argon gas after vacuumizing, 500 ℃-800 ℃ insulations 1.5-3 hour, finally obtain containing the Nb of Si element and C element
3The Sn superconduction block material.
Embodiment
In order to make those skilled in the art more clearly understand Nb of the present invention
3The preparation method of Sn superconduction block material describes its technical scheme in detail below by embodiment.
Nb of the present invention
3The preparation method of Sn superconduction block material comprises the steps:
At raw material Nb powder, add nanometer Si/N/C powder in the Sn powder, material purity is commercially available chemical pure, and the mol ratio of its composition is: the Nb:Sn:Si/N/C powder=(0.8-0.975): (1.6-1.95): (0.025-0.2).With the Nb powder, Sn powder, nanometer Si/N/C powder are according to mol ratio (0.8-0.975): (1.8-1.95): (0.025-0.2) prepare and mix, the raw meal that mixes is carried out compressing tablet with tablet press machine, obtain containing the Nb of nanometer Si/N/C powder
3The Sn superconduction block material; The superconduction block material that obtains is placed in the vacuum furnace, is filled with argon gas after vacuumizing, 500 ℃-800 ℃ insulations 1.5-3 hour, finally obtain containing the Nb of Si element and C element
3The Sn superconducting tape.
Nb
3Lack the fault of construction that to carry out anchoring to flux creep in the Sn crystal, so very fast the reducing with the increase of magnetic field intensity of its critical current.Nb improves in the pinning center that therefore can adopt methods such as increasing crystal defect or increase crystal lattice interface to increase crystal
3The flux pinning ability of Sn, thereby the critical current density of raising material.In general, pinning mechanism can be divided into two kinds, and a kind of short distance that derives from crystal grain inside is unordered, and another kind derives from the long-range inhomogeneities relevant with crystal structure and crystal boundary.Doping can be introduced pinning center and improve intercrystalline connectivity, thereby reaches the purpose that improves critical current density.The present invention is optimizing under the material processing technique prerequisite, by dopen Nano Si/N/C, at Nb
3By the alternative introducing defective of C to Sn, and the less impurity of part particle diameter that Si and Nb reaction generates also can be used as the anchoring center in the Sn lattice, and these can strengthen Nb
3The flux pinning ability of Sn material.And because Si/N/C mixes rear to Nb
3Sn superconducting transition temperature impact is less, thus reduced by superconducting transition temperature reduce produce to Nb
3The negative effect of Sn critical current density.
The present invention adopts Si/N/C nano-particle doped, not only provide two kinds of dopants with good doping effect, and they has characteristics separately.For example, utilizing the SiC whisker to mix can be to Nb
3The Sn superconducting core brings line defect, causes Nb
3The Sn superconducting core has certain texture; Utilize that Si/N/C is nano-particle doped not only to can be provided in the carbon that SiC plays a key effect when nano-particle doped, and can not produce too many because SiC decomposes the Nb that causes
2Si impurity.These advantages are for further raising Nb
3The superconducting characteristic of Sn material is significant.
Nb with the inventive method preparation
3The critical current density of Sn superconduction block material is 4.5 * 10
3A/cm
2About (4.2K, 10T), and repeatability is fine, and cost is far below the sample of the same in-situ fabrication of available technology adopting preparation.
Embodiment 1
Preparation (Nb
3Sn)
0.95(SiC)
0.05Superconduction block material.With the Nb powder, the Sn powder, nanometer Si/N/C powder is according to the accurate weighing of mol ratio 0.95:1.9:0.05 and mix, carry out in the normal pressure argon atmospher, carrying out sintering behind the compressing tablet with tablet press machine, 700 ℃ of insulations 2 hours, then in vacuum furnace, be cooled to room temperature, obtain containing the Nb of Si element and C element
3The Sn superconduction block material.
Embodiment 2
Preparation (Nb
3Sn)
0.8(Si/N/C)
0.2Superconduction block material.With the Nb powder, the Sn powder, nanometer Si/N/C powder is according to the accurate weighing of mol ratio 0.8:1.6:0.2 and mix, carry out in the normal pressure argon atmospher, carrying out sintering behind the compressing tablet with tablet press machine, 600 ℃ of insulations 1.5 hours, then in vacuum furnace, be cooled to room temperature, obtain containing the Nb of Si element and C element
3The Sn superconduction block material.
Embodiment 3
Preparation (Nb
3Sn)
0.9(SiC)
0.1Superconduction block material.With the Nb powder, the Sn powder, nanometer Si/N/C powder is according to the accurate weighing of mol ratio 0.9:1.8:0.1 and mix, carry out in the normal pressure argon atmospher, carrying out sintering behind the compressing tablet with tablet press machine, 800 ℃ of insulations 3 hours, then in vacuum furnace, be cooled to room temperature, obtain containing the Nb of Si element and C element
3The Sn superconduction block material.
This technology of above embodiment application can the good superconduction block material of processability, and this is Nb
3The practical application of Sn superconductor provides material foundation.
Certainly; the present invention also can have other various embodiments; in the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (1)
1. Nb
3The preparation method of Sn superconduction block material is characterized in that, comprises the steps:
With the Nb powder, Sn powder, nanometer Si/N/C powder are according to mol ratio (0.8-0.975): (1.8-1.95): (0.025-0.2) prepare and mix, the raw meal that mixes is carried out compressing tablet with tablet press machine, obtain containing the Nb of nanometer Si/N/C powder
3The Sn superconduction block material; The bulk that obtains is placed in the vacuum furnace, is filled with argon gas after vacuumizing, 500 ℃-800 ℃ insulations 1.5-3 hour, finally obtain containing the Nb of Si element and C element
3The Sn superconduction block material.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117646131A (en) * | 2022-08-18 | 2024-03-05 | 中国科学院赣江创新研究院 | Nb (Nb) alloy 3 Sn superconducting material and preparation method thereof |
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2012
- 2012-11-30 CN CN2012105009183A patent/CN103021563A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117646131A (en) * | 2022-08-18 | 2024-03-05 | 中国科学院赣江创新研究院 | Nb (Nb) alloy 3 Sn superconducting material and preparation method thereof |
CN117646131B (en) * | 2022-08-18 | 2024-07-19 | 中国科学院赣江创新研究院 | Nb (Nb) alloy3Sn superconducting material and preparation method thereof |
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Application publication date: 20130403 |