CN103011824B - A kind of Dielectric substrate for metamaterial and preparation method thereof - Google Patents
A kind of Dielectric substrate for metamaterial and preparation method thereof Download PDFInfo
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- CN103011824B CN103011824B CN201110297890.3A CN201110297890A CN103011824B CN 103011824 B CN103011824 B CN 103011824B CN 201110297890 A CN201110297890 A CN 201110297890A CN 103011824 B CN103011824 B CN 103011824B
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Abstract
Medium substrate material that the invention provides a kind of Meta Materials and preparation method thereof, comprises the following steps: 1011. grind to form fine particle by after boron-doped nanometer silicon carbide powder, solvent, tensio-active agent mixing; 1012. is also dry by the fine particle supersound washing after grinding; 1013. utilize heat and other static pressuring processes to sinter fine particle into boron-doped nanometer silicon carbide ceramics; 102. boron and the nanometer silicon carbides selecting different mass ratio as required, repeat above-mentioned steps, obtain different potteries, sinter the medium substrate material of formation Meta Materials.Apply preparation method of the present invention, the thermal conductivity of the medium substrate material of Meta Materials can be improved, reduce the tangent loss of baseplate material.In addition, in the process preparing thyrite, mix boron as additive, significantly reduce the integral sintered temperature of thyrite.
Description
[technical field]
The present invention relates to Meta Materials field, medium substrate material relating to a kind of Meta Materials particularly and preparation method thereof.
[background technology]
Meta Materials is generally stacked by multiple Meta Materials feature board or combine by other regular array, Meta Materials feature board comprises medium substrate and the multiple man-made microstructure of array on medium substrate, the medium substrate of existing Meta Materials is the organic or inorganic substrate of uniform material, as FR4, TP1 etc.The multiple man-made microstructure of array on medium substrate have specific electromagnetic property, electromagnetic response can be produced to electric field or magnetic field, by carrying out careful design and control to the structure of man-made microstructure and arrangement regulation, the electromagnetic property that Meta Materials can be made to present various general material do not have, if converge, disperse and deviation hertzian wave etc.
Nanometer silicon carbide purity is high, particle diameter is little, be evenly distributed, specific surface area is large, surfactivity is high, has fabulous mechanics, calorifics, electricity and chemical property, namely has high rigidity, high-wearing feature and good self-lubricating capacities, and the mechanical property with high thermoconductivity, low tangent loss and low thermal coefficient of expansion and excellence.Silicon carbide nano material has high energy gap, high critical breakdown electric field and thermal conductivity, lower specific inductivity and the saturated mobility of higher electronics, capability of resistance to radiation is strong, the characteristics such as good mechanical property, become the ideal material making high frequency, high-power, less energy-consumption, high temperature resistant and radioprotective electronics and opto-electronic device.
Hot isostatic pressing (hot isostatic pressing, be called for short HIP) be a kind of process production techniques integrating high temperature, high pressure, Heating temperature is generally 1000-2000 DEG C, by using the high-pressure inert gas in encloses container or nitrogen as transmission medium, operating pressure can reach 200MPa.Under the acting in conjunction of high temperature, high pressure, work piece each to balanced pressurized, therefore the density of converted products is high, good uniformity, excellent performance.This technology also has the features such as with short production cycle, operation is few, energy consumption is low, spillage of material is little.
The development of Meta Materials industry, the requirement of medium substrate is improved greatly, medium substrate material is in the past high molecular polymer, its heat conductivility is lower, therefore, develop a kind of high heat conductance, low tangent loss, there is very good mechanical properties novel material significant for the performance improving Meta Materials as medium substrate material.
[summary of the invention]
Technical problem to be solved by this invention medium substrate material being to provide a kind of Meta Materials and preparation method thereof, this preparation method's production technique is simple, and the medium substrate material of the Meta Materials made has that tangent loss is low, thermal conductivity high.Along with the reduction of grain-size, the superplastic ability of nano material strengthens, and the mechanical property of the nano ceramic material therefore prepared by this method is quite superior, is beneficial to large-scale commercial production, has good development & application prospect.
The present invention realizes goal of the invention medium substrate material first providing a kind of Meta Materials and preparation method thereof, comprises the following steps:
101. prepare boron-doped nanometer silicon carbide ceramics;
102. boron and the nanometer silicon carbides selecting different mass ratio as required, repeat above-mentioned steps, obtain different potteries, sinter the medium substrate material of formation Meta Materials.
Step 101 is prepared boron-doped nanometer silicon carbide ceramics multi-ply wood and is comprised the following steps:
1011. grind to form fine particle by after boron-doped nanometer silicon carbide powder, solvent, tensio-active agent mixing;
1012. is also dry by the fine particle supersound washing after grinding;
1013. utilize heat and other static pressuring processes to sinter fine particle into boron-doped nanometer silicon carbide ceramics.
As embodiment, in described step 1011, in described boron-doped nanometer silicon carbide powder, the mass ratio of boron is 0.1%-20%.
As embodiment, in described step 1011, purity >=99% of described Neon SiC powder.
As embodiment, in described step 1011, the granularity of described boron-doped nanometer silicon carbide powder is 30-100nm.
As embodiment, in described step 1011, described solvent is water and ethanol, and both mass ratioes are, water: ethanol=9:1.
As embodiment, in described step 1011, described tensio-active agent is triolein, and the mass ratio of described tensio-active agent is 0-1%.
As embodiment, in described step 1013, the sintering pressure of described heat and other static pressuring processes controls at 800-1000MPa, and sintering temperature controls at 1500-1800 DEG C, and sintering time controls at 5-15min.
A medium substrate material for Meta Materials, described medium substrate material is sintered by boron-doped nanometer silicon carbide ceramics and forms, and in described boron-doped nanometer silicon carbide ceramics, the mass ratio of boron is 0.1%-20%.
By medium substrate material applying Meta Materials of the present invention and preparation method thereof, boron is mixed in sintering nano silicon carbide ceramic process, effectively can improve the thermal conductivity of baseplate material, strengthen the mechanical property of baseplate material, reduce the tangent loss of medium substrate, the packaging process development for Meta Materials is significant.
[accompanying drawing explanation]
Fig. 1, preparation method's schema of the medium substrate material of Meta Materials.
Fig. 2, boron-doped nanometer silicon carbide ceramics preparation method schema.
[embodiment]
Below in conjunction with drawings and Examples, the present invention is described in detail.
The present invention uses heat and other static pressuring processes to manufacture nano silicon carbide ceramic, and the medium substrate material of Meta Materials is prepared as former material, boron is added as additive in hot isostatic pressing, sintering temperature can be reduced, improve the thermal conductivity of the medium substrate material of Meta Materials, reduce the tangent loss of baseplate material.The stupalith made of nanometer silicon carbide because of its grain-size less, superplasticity strengthens, and the medium substrate material therefore using nano silicon carbide ceramic as Meta Materials can the mechanical property of amplified medium baseplate material.The change controlling additive capacity as required can obtain different potteries, by different ceramic post sinterings, can make the medium substrate material of the Meta Materials with particular community.
Embodiment 1
The preparation method of the present embodiment is as follows:
1011. be 30nm by 1.2g boron, 6.8g granularity, purity be 99% Neon SiC powder, 90g water, 10g ethanol, grind to form fine particle after the mixing of 1.08g triolein;
1012. is also dry by the fine particle supersound washing after grinding;
1013. utilize heat and other static pressuring processes to sinter fine particle into boron-doped nanometer silicon carbide ceramics, when utilizing heat and other static pressuring processes to sinter by pressure-controlling at 980MPa, sintering temperature controls at 1600 DEG C, and time controling is at 10min.
102. get 0.91g boron, 6.09g granularity be 30 μm, purity be 99% Neon SiC powder, 90g water, 10g ethanol, 1.07g triolein mixed grinding becomes fine particle, other condition is constant, repeat above-mentioned steps, obtain different boron-doped nanometer silicon carbide ceramics, make 2 kinds of boron-doped nanometer silicon carbide ceramics are sintered into the medium substrate material of Meta Materials through above-mentioned steps.
Embodiment 2
Sometimes, in order to make the method for the medium substrate material preparing Meta Materials more flexible, preparation process more easily controls, and can adopt with the following method:
1011. be 30 μm by 0.55g boron, 4.95g granularity, purity be 99.99% Neon SiC powder, 45g water, 5g ethanol, grind to form fine particle after the mixing of 0.555g triolein;
1012. is also dry by the fine particle supersound washing after grinding;
1013. utilize heat and other static pressuring processes to sinter fine particle into boron-doped nanometer silicon carbide ceramics, when utilizing heat and other static pressuring processes to sinter by pressure-controlling at 980MPa, sintering temperature controls at 1600 DEG C, and time controling is at 8min.
102. get 0.804g boron, 5.896g granularity be 30 μm, purity be 99% Neon SiC powder, 72g water, 8g ethanol, 0.867g triolein mixed grinding becomes fine particle, other condition is constant, repeats above-mentioned steps, obtains the boron-doped nanometer silicon carbide ceramics with different microstructure; Get 0.72g boron, 3.28g granularity be 30 μm, purity be 99% Neon SiC powder, 72g water, 8g ethanol, 0.84g triolein mixed grinding becomes fine particle, other condition is constant, repeat above-mentioned steps, obtain different boron-doped nanometer silicon carbide ceramics, make 3 kinds of boron-doped nanometer silicon carbide ceramics are sintered into the medium substrate material of Meta Materials through above-mentioned steps.
The method that above-described embodiment prepares the medium substrate material of Meta Materials is simple, and preparation condition is less demanding, is easy to realize.The boron-doped nanometer silicon carbide ceramics baseplate material made has higher thermal conductivity, utilize medium substrate material prepared by the feature of nanometer silicon carbide itself, the tangent loss of medium substrate material in preparation process is reduced greatly, boron is mixed as additive in manufacturing process, also reduce the temperature in sintering process, there is good development prospect.
Above-described embodiment in the present invention has only done exemplary description, and those skilled in the art can carry out various amendment to the present invention without departing from the spirit and scope of the present invention after reading present patent application.
Claims (5)
1. a preparation method for the medium substrate material of Meta Materials, is characterized in that, comprise the following steps:
The nano silicon carbide ceramic of pure boron is mixed in 101. preparations, comprises step:
1011. grind to form fine particle after mixing the Neon SiC powder of pure boron, solvent, tensio-active agent mixing, described in mix boron in the Neon SiC powder of pure boron mass ratio be 0.1%-20%;
1012. is also dry by the fine particle supersound washing after grinding;
1013. utilize heat and other static pressuring processes fine particle to be sintered into the nano silicon carbide ceramic mixing pure boron, and the sintering pressure of described heat and other static pressuring processes controls at 800-1000MPa, and sintering temperature controls at 1500-1800 DEG C, and sintering time controls at 5-15min;
102. boron and the nanometer silicon carbides selecting different mass ratio as required, repeat above-mentioned steps, obtain different potteries, described different ceramic post sintering is formed the medium substrate material of Meta Materials.
2. the preparation method of the medium substrate material of Meta Materials according to claim 1, is characterized in that, in described step 1011, and purity >=99% of described Neon SiC powder.
3. the preparation method of the medium substrate material of Meta Materials according to claim 1, is characterized in that, in described step 1011, described in mix the Neon SiC powder of pure boron granularity be 30-100nm.
4. the preparation method of the medium substrate material of Meta Materials according to claim 1, is characterized in that, in described step 1011, described solvent is water and ethanol, and both mass ratioes are, water: ethanol=9:1.
5. a medium substrate material for Meta Materials, is characterized in that, described medium substrate material is made by the method as described in any one of Claims 1-4, described in mix boron in the nano silicon carbide ceramic of pure boron mass ratio be 0.1%-20%.
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| CN101580390A (en) * | 2008-05-15 | 2009-11-18 | 中国科学院金属研究所 | Silicon carbide ceramic tubular product and preparation method thereof |
| CN101798223A (en) * | 2010-04-19 | 2010-08-11 | 西安交通大学 | Preparation method of compact silicon carbide ceramic |
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| CN101580390A (en) * | 2008-05-15 | 2009-11-18 | 中国科学院金属研究所 | Silicon carbide ceramic tubular product and preparation method thereof |
| CN101798223A (en) * | 2010-04-19 | 2010-08-11 | 西安交通大学 | Preparation method of compact silicon carbide ceramic |
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