CN103011591A - Terbium-ion-doped gadolinium lutetium oxyfluoride scintillation glass and preparation method thereof - Google Patents

Abstract

The invention discloses terbium-ion-doped gadolinium lutetium oxyfluoride scintillation glass and a preparation method thereof. The terbium-ion-doped gadolinium lutetium oxyfluoride scintillation glass is prepared by mixing raw material components, melting, casting a mould and annealing; and the terbium-ion-doped gadolinium lutetium oxyfluoride scintillation glass disclosed by the invention is prepared from the following raw material components in percentage by mole: 25-30mol% of SiO2, 10-15mol% of B2O3, 15mol% of BaF2, 25-30mol% of Lu2O3, 10mol% of Gd2O3 and 5mol% of Tb2O3. The terbium-ion-doped gadolinium lutetium oxyfluoride scintillation glass disclosed by the invention has the advantages of higher density and higher luminous intensity as Lu2O3 and Gd2O3 components coexist, self absorption of optical scintillation glass can be avoided, the density of Lu2O3 is higher than that of Gd2O3, the heavy metal content is more than or equal to 35mol%, the density is more than 6.0g/cm<3> or above and the luminous integral intensity is higher and is more than 2700. A preparation method is simple, the production cost is lower, and industrial production is easy to realize.

Description

Gadolinium lutetium oxyfluoride scintillation glass and the preparation method of terbium ion doping

Technical field

The present invention relates to scintillation glass, be specifically related to gadolinium lutetium oxyfluoride scintillation glass and the preparation method of terbium ion doping.

Background technology

Scintillation material is a kind of optical function material that can send visible light under the exciting of high energy particle or ray (such as x ray, gamma-rays or nuclear particle etc.).Scintillation glass divides with base material, can be divided into silicate glass, heavy metal oxide glass, phosphate glass etc.Disclose a kind of silicate scintillation glass, SiO in the raw material of this scintillation glass such as Granted publication number for the CN100522855 patent of invention ₂Account for 50～80 mol %, and Gd ³⁺Content seldom uses BaF as sensitizing agent ₂Content is few, uses as fusing assistant.Granted publication number then discloses the heavy metal oxide scintillation glass for the CN1269758 patent of invention, Lu in its raw material ₂O ₃Or Gd ₂O ₃Account for 10～30 mol %, although contain heavy metal gadolinium or lutetium in the raw material, heavy metal content is no more than 30 mol %.Gd ³⁺Concentration quenching effect is arranged when ion content is higher, in the scintillation glass gadolinium oxide molar content greater than 10mol% after, the terbium ion luminous intensity can reduce gradually.Heavy metal content is low, and scintillation glass density is low, and volume is larger, easy deliquescence, and the also corresponding increase of time spent equipment, instrument volume, cost are high; Gd ³⁺When ion content was higher, although density improves, because luminous intensity reduces, scintillation properties was relatively poor, therefore sought, research density is larger, and the metal oxide scintillation glass that luminous intensity is stronger just seems particularly important.

Summary of the invention

It is larger that technical problem to be solved by this invention provides a kind of density, the gadolinium lutetium oxyfluoride scintillation glass of the terbium ion doping that luminous intensity is stronger.Also provide preparation simple, the preparation method of this scintillation glass that production cost is lower.

The present invention solves the problems of the technologies described above the technical scheme that adopts: the gadolinium lutetium oxyfluoride scintillation glass of terbium ion doping, prepare by material component mixing, fusing, mold and annealing, and the molar percentage of its material component is as follows: SiO ₂: 25～30 mol%, B ₂O ₃: 10～15mol%, BaF ₂: 15mol%, Lu ₂O ₃: 25～35mol%, Gd ₂O ₃: 10mol%, Tb ₂O ₃: 5mol%.Lutecium oxide not only improves glass density, also can reduce Gd ³⁺The concentration quenching effect of ion.

The molar percentage of its material component is as follows: SiO ₂: 30 mol%, B ₂O ₃: 15mol%, BaF ₂: 15 mol%, Lu ₂O ₃: 25 mol%, Gd ₂O ₃: 10 mol%, Tb ₂O ₃: 5mol%.

The molar percentage of its material component is as follows: SiO ₂: 25 mol%, B ₂O ₃: 15mol%, BaF ₂: 15 mol%, Lu ₂O ₃: 30 mol%, Gd ₂O ₃: 10 mol%, Tb ₂O ₃: 5mol%.

The molar percentage of its material component is as follows: SiO ₂: 25 mol%, B ₂O ₃: 10mol%, BaF ₂: 15 mol%, Lu ₂O ₃: 35 mol%, Gd ₂O ₃: 10 mol%, Tb ₂O ₃: 5mol%.

The preparation method of the gadolinium lutetium oxyfluoride scintillation glass of described terbium ion doping, step is as follows:

A. press material component SiO ₂: 25～30 mol%, B ₂O ₃: 10～15mol%, BaF ₂: 15mol%, Lu ₂O ₃: 25～35mol%, Gd ₂O ₃: 10mol%, Tb ₂O ₃: 5mol% takes by weighing analytically pure each raw material, and all raw materials are mixed, and pouring in the crucible in temperature of fusion is under 1350～1450 ℃, is molten into melt, and insulation is 0.5～2 hour after the fusing; BaF ₂Can reduce glass melting temperature;

B. above-mentioned melt being poured in temperature is 200～300 ℃ pig mold trussell, and naturally cooling becomes glass;

C. place retort furnace to anneal in above-mentioned glass, annealing conditions: 400～500 ℃ of insulations 2 hours, be cooled to 45～55 ℃ with 8～10 ℃/hour speed again, then close retort furnace power supply automatic cooling to room temperature and obtain scintillation glass.

Scintillation glass after the annealing can through cutting, surface grinding, polishing post-treatment become 50 * 50 * 10mm etc. sample.

Compared with prior art, the invention has the advantages that gadolinium lutetium oxyfluoride scintillation glass and the preparation method of terbium ion doping, prepare by material component mixing, fusing, mold and annealing, the molar percentage of its material component is as follows: SiO ₂: 25～30 mol%, B ₂O ₃: 10～15mol%, BaF ₂: 15mol%, Lu ₂O ₃: 25～35mol%, Gd ₂O ₃: 10mol%, Tb ₂O ₃: 5mol%; Lu in this scintillation glass ₂O ₃And Gd ₂O ₃Component is also deposited, and can avoid the self-absorption of twinkling light glass, Lu ₂O ₃Density ratio Gd ₂O ₃Also high, Chong Jin belongs to Han Liang＞=35 mol%, and density can reach 6.0g/cm ³Above, and the integration luminous intensity reaches more by force more than 2700, is that density is larger therefore, the gadolinium lutetium oxyfluoride scintillation glass of the terbium ion doping that luminous intensity is stronger.The preparation method is simple, and fusing and annealing temperature are lower, and production cost is lower, is convenient to suitability for industrialized production.

Description of drawings

Fig. 1 is the utilizing emitted light spectrogram under the excitation of X-rays of embodiment 1,2,3 samples;

Fig. 2 is the utilizing emitted light spectrogram under the excitation of X-rays of Comparative Examples 1,2 samples.

Embodiment

Embodiment is described in further detail the present invention below in conjunction with accompanying drawing.

Embodiment 1

Press material component: SiO ₂: 30 mol%, B ₂O ₃: 15mol%, BaF ₂: 15 mol%, Lu ₂O ₃: 25 mol%, Gd ₂O ₃: 10 mol%, Tb ₂O ₃: 5mol%, take by weighing each raw material, all raw materials are mixed; Then pour into and be molten into melt in the crucible, temperature of fusion is 1350～1450 ℃, and insulation is 0.5～2 hour after the fusing; Melt is poured on the pig mold of 200～300 ℃ of preheatings, and naturally cooling forms glass; Place retort furnace to anneal in glass, annealing conditions: 400～500 ℃ are incubated 1 hour, be cooled to 45～55 ℃ with 8～10 ℃/hour speed again, then close retort furnace power supply automatic cooling to room temperature and obtain the gadolinium lutetium oxyfluoride scintillation glass of terbium ion doping, the density of this scintillation glass is 6.0g/cm ³Scintillation glass cutting, surface grinding, polishing post-treatment are become 50 * 50 * 10mm scintillation glass sample, with this scintillation glass sample of excitation of X-rays, measure utilizing emitted light, obtain utilizing emitted light spectrogram shown in Figure 1, from Fig. 1, can calculate integration luminous intensity approximately 2710.

Claims (5)

1. the gadolinium lutetium oxyfluoride scintillation glass of terbium ion doping prepares by material component mixing, fusing, mold and annealing, it is characterized in that the molar percentage of material component is as follows: SiO ₂: 25～30 mol%, B ₂O ₃: 10～15mol%, BaF ₂: 15mol%, Lu ₂O ₃: 25～35mol%, Gd ₂O ₃: 10mol%, Tb ₂O ₃: 5mol%.

2. cerium ion-doped gadolinium lutetium oxyfluoride scintillation glass as claimed in claim 1 is characterized in that the molar percentage of material component is as follows: SiO ₂: 30 mol%, B ₂O ₃: 15mol%, BaF ₂: 15 mol%, Lu ₂O ₃: 25 mol%, Gd ₂O ₃: 10 mol%, Tb ₂O ₃: 5mol%.

3. the gadolinium lutetium oxyfluoride scintillation glass of terbium ion doping as claimed in claim 1 is characterized in that the molar percentage of material component is as follows: SiO ₂: 25 mol%, B ₂O ₃: 15mol%, BaF ₂: 15 mol%, Lu ₂O ₃: 30 mol%, Gd ₂O ₃: 10 mol%, Tb ₂O ₃: 5mol%.

4. the gadolinium lutetium oxyfluoride scintillation glass of terbium ion doping as claimed in claim 1 is characterized in that the molar percentage of material component is as follows: SiO ₂: 25 mol%, B ₂O ₃: 10mol%, BaF ₂: 15 mol%, Lu ₂O ₃: 35 mol%, Gd ₂O ₃: 10 mol%, Tb ₂O ₃: 5mol%.

5. the preparation method of the gadolinium lutetium oxyfluoride scintillation glass of terbium ion doping claimed in claim 1 is characterized in that step is as follows:

A. press material component SiO ₂: 25～30 mol%, B ₂O ₃: 10～15mol%, BaF ₂: 15mol%, Lu ₂O ₃: 25～35mol%, Gd ₂O ₃: 10mol%, Tb ₂O ₃: 5mol%, take by weighing analytically pure each raw material, all raw materials are mixed, pouring in the crucible in temperature of fusion is under 1350～1450 ℃, is molten into melt, insulation is 0.5～2 hour after the fusing;

B. above-mentioned melt being poured in temperature is 200～300 ℃ pig mold trussell, and naturally cooling becomes glass;

C. place retort furnace to anneal in above-mentioned glass, annealing conditions: 400～500 ℃ of insulations 2 hours, be cooled to 45～55 ℃ with 8～10 ℃/hour speed again, then close retort furnace power supply automatic cooling to room temperature and obtain scintillation glass.

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