CN103000981B

CN103000981B - Manufacture method of millimeter wave cavity filter

Info

Publication number: CN103000981B
Application number: CN201210463302.3A
Authority: CN
Inventors: 段俊萍; 王万军; 张安学; 张斌珍; 吴淑娟; 张勇; 王研; 姚德启; 崔敏; 王春水
Original assignee: North University of China
Current assignee: North University of China
Priority date: 2012-11-17
Filing date: 2012-11-17
Publication date: 2014-09-17
Anticipated expiration: 2032-11-17
Also published as: CN103000981A

Abstract

The invention relates to a manufacture method of a millimeter wave cavity filter. Photoresists are adopted as the auxiliary materials, electroplated metal materials are adopted as the structural materials, mask plates with different patterns are matched, the photoresist technology of multi-layer glue homogenizing, layer-by-layer photoetching and developing, electroplating and final stripping and curing is adopted, and a complex three-dimensional metal structure of the cavity filter can be accurately constructed. Flexible materials polydimethylsiloxane (PDMS) with excellent elasticity are used for mold turning to build a mold, then the mold is cured in injection molding mode, a cavity structure and a cover plate structure can be copied fast and accurately, and finally the cavity structure and the cover plate structure are bonded and packaged to obtain the whole millimeter wave cavity filter. The millimeter wave cavity filter manufactured in the manufacture method is light in volume, high in accuracy and frequency, wide in bandwidth and large in signal capacity. A cavity of the filter is integrally arranged so that error caused by assembling is avoided and the performance of the filter is improved. The manufacture method has the advantages of being simple in process, high in manufacture accuracy and the like.

Description

The manufacture method of millimeter wave cavity body filter

Technical field

The present invention relates to microwave communication and ECM (Electronic Countermeasures) field, specifically a kind of manufacture method of and the closely-related millimeter wave cavity body filter of micro fabrication.

Background technology

Filter is widely used in the field such as modern communication and electronic countermeasures, in order to eliminate clutter and the interference signal beyond desired signal frequency, is a kind of common frequency-selecting device.Filter has diversified, wherein cavity body filter because of its have firm in structure, working frequency range is high, loss is low, bear power high, receives favor.Meanwhile, cavity body filter is a kind of pure structural device, and its performance index and reliability all depend on the architectural feature of self.

Along with Radio Spectrum Resource growing tension, search out and make full use of other applicable radio waves and have great significance.Millimeter-wave frequency is high, bandwidth, signal volume are large, is easy to realize the plurality of advantages such as narrow beam directed radiation, is subject to people's more and more concerns and favor.In addition, with the closely related size that factor is radio-frequency devices of operating frequency.High-frequency element size is less, more can meet the demand for development of electronic system miniaturization and portability.But, for the millimetric wave device, particularly millimeter wave cavity body filter of volume small (being of a size of even submillimeter level of grade), complex structure, required precision high (precision prescribed is micron order), conventional machining process implements quite difficulty.Therefore, design the microminiaturized filter of high band, research and develop the micro fabrication of new structure, become the problem of industry extensive concern.

High frequency filter device, because size is less, required precision is very high, tradition machining implements very difficult, but along with MEMS(Microelectromechanical System MEMS (micro electro mechanical system)) technology growing, the especially micro-technique of silicon is ripe gradually, and a lot of scientific research personnel start to apply MEMS technology, but, silicon technology complicated operation, is difficult to manufacture complicated three-dimensional structure, and, because insulating properties is not good, silicon nonideal RF MEMS material.

Summary of the invention

The object of the invention is the manufacture method for a kind of millimeter wave cavity body filter is provided.In process of the present invention, make with photoresist as auxiliary material, use electroplating metal material as structural material, and coordinate the mask plate of different pattern, adopt the even glue of multilayer, successively photoetching also to develop, finally peel off the technology of curing photoresist, can accurately construct the 3-dimensional metal structure (machining accuracy is even submicron order of micron) of cavity body filter complexity.In addition, utilize the flexible material PDMS of elasticity excellence to turn over mould to it, structure mould, again mould being carried out to injection moulding solidifies, can accurately copy fast to cavity body structure and covering plate structure (accuracy of repetition is nanoscale), finally the two is carried out to bonding packaging, obtain complete millimeter wave cavity body filter.

The present invention is achieved by the following technical solutions:

A kind of manufacture method of millimeter wave cavity body filter, millimeter wave cavity body filter comprises cavity, resonant column and cover plate, in cavity, be provided with isolating frame, the horizontal dividing wall that isolating frame is fixed on perpendicular dividing wall by a perpendicular dividing wall and several square crossings forms, and an end and the cavity side plate of isolating frame fixed, leave coupling window between all the other each ends and cavity side plate; Inside cavity space is divided into some cavitys by isolating frame, and resonant column splits and is contained in each cavity; Resonant column be divided into some groups and each group highly not identical; On cavity side plate, offer coaxial feed and enter, export, on the one group of resonant column enter, exit position being corresponding, be respectively connected with a coaxial feeder with coaxial feed, the other end of coaxial feeder enters, exports and be placed on cavity outside through coaxial feed; The position that on cover plate, corresponding coaxial feed enters, exports is provided with and can snaps in the fixture block that coaxial feed enters, exports, and cover plate is by fixture block and the tight bonding of cavity; When work, microwave signal is entered in cavity through coaxial feed entrance by the coaxial feeder of one end, each cavity moving towards through being U font successively in cavity, after the resonant column filtering in each cavity, filter out after needed signal, exported through coaxial feed outlet by the coaxial feeder of the cavity other end.This millimeter wave cavity body filter is taking plated metal as structural material, it is the even glue of multilayer on substrate, successively coordinate the some mask plates that are carved with different pattern repeatedly to aim at photoetching, development plating, successively processing, the most curing photoresist structure is peeled off and is made simultaneously; Concrete manufacture method comprises the steps (make as supplementary structure material to bear photoresist, and coaxial feeder and resonant column being split setting):

1) first get substrate, (this metal seed layer is the metal back layer as electroplating work procedure on substrate, evenly to adhere to layer of metal Seed Layer, on metal back layer, carry out plated metal), on metal level, the negative photoresist of spin coating ground floor is to desired height, then A mask plate is placed on the negative photoresist of ground floor that spin coating is good, finally aims at A mask plate and carry out photoetching; Wherein, the pattern on A mask plate is: four side plates of cavity block, and in cavity, isolating frame and each group of resonant column block, all the other hollow outs; Through developing, the pattern forming on the negative photoresist of ground floor is: on A mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, and expose four side plates, the isolating frame of cavity and respectively organize resonant column at on-chip metal seed layer, the height of negative photoresist to plated metal in shrinkage pool to ground floor;

2) on the negative photoresist of ground floor, continue the negative photoresist of the spin coating second layer to desired height, then B mask plate is placed on the negative photoresist of the second layer that spin coating is good, finally aim at B mask plate and carry out photoetching; Wherein, the pattern on B mask plate is: all the other are for blocking except coaxial feed enters, the hollow out of exit for four side plates of cavity, and in cavity, isolating frame and each group of resonant column block, all the other hollow outs; While placing B mask plate, be by the A mask plate pattern complete matching placement of electroplating out in negative to B mask plate pattern and ground floor photoresist, and pattern dimension on B mask plate is identical with A mask plate pattern dimension; Through developing, the pattern forming on the negative photoresist of the second layer is: on B mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of the second layer;

3) on the negative photoresist of the second layer, continue the 3rd layer of negative photoresist of spin coating to desired height, then C mask plate is placed on the 3rd layer of negative photoresist that spin coating is good, finally aim at C mask plate and carry out photoetching; Wherein, the pattern on C mask plate is: all the other are for blocking except coaxial feed enters, the hollow out of exit for four side plates of cavity, and in cavity, isolating frame blocks, except minimum one group of resonant column hollow out, remaining resonant column blocks, all the other are hollow out; While placing C mask plate, be by the B mask plate pattern complete matching placement of electroplating out in negative to C mask plate pattern and second layer photoresist, and pattern dimension on C mask plate is identical with A mask plate pattern dimension; Through developing, the pattern forming on the 3rd layer of negative photoresist is: on C mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, the height of three layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of negative photoresist, continue the 4th layer of negative photoresist of spin coating to desired height, then D mask plate is placed on the 4th layer of negative photoresist that spin coating is good, finally aim at D mask plate and carry out photoetching; Wherein, the pattern on D mask plate is: all the other are for blocking except coaxial feed enters, the hollow out of exit for four side plates of cavity, and in cavity, isolating frame blocks, except minimum and second low two groups of resonant column hollow outs, remains that resonant column blocks, all the other hollow outs; While placing D mask plate, be by the C mask plate pattern complete matching placement of electroplating out in D mask plate pattern and the 3rd layer of negative photoresist, and pattern dimension on D mask plate is identical with A mask plate pattern dimension; Through developing, the pattern forming on the 4th layer of negative photoresist is: on D mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, the height of four layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

5) when every layer of negative photoresist of spin coating afterwards carries out lithography process, method repeats rapid 4) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with the D mask plate pattern in step 4), difference is: each layer of mask plate pattern one group of minimum resonant column of hollow out successively using afterwards, until the N mask plate pattern of last one deck is: four side plates of cavity except coaxial feed enters, the hollow out of exit all the other for blocking, in cavity, isolating frame blocks, all the other whole hollow outs; When each mask plate after placing and last N mask plate, the mask plate pattern complete matching of electroplating out in each mask plate and N mask plate pattern and the negative photoresist of last layer separately will be placed, and pattern dimension on each mask plate and N mask plate is identical with A mask plate pattern dimension; Through developing, the pattern forming on the negative photoresist of last one deck is: on N mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of last one deck;

6) complete after above-mentioned all photoetching, plated metal, the negative photoresist solidifying in structure is fully peeled off, obtained the metal three-dimensional structure of resonant column and the isolating frame composition of cavity and inside thereof;

7) carry out the making of cover plate: first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, and on metal level, the negative photoresist of spin coating one deck, to desired height, is then placed in cover plate mask plate on the negative photoresist layer that spin coating is good, finally aims at cover plate mask plate and carries out photoetching; Wherein, the pattern on cover plate mask plate is: two fixture blocks block all the other whole hollow outs; Through developing, the pattern forming on this layer of negative photoresist is: on cover plate mask plate, two fastening block parts partly solidified, that block of hollow out divide formation shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of this layer of negative photoresist; Complete after plating, the negative photoresist in structure is fully peeled off, obtained the metal three-dimensional structure of cover plate and fixture block composition thereof;

8), entering with coaxial feed, be respectively connected with a coaxial feeder on one group of resonant column that exit position is corresponding, the other end of coaxial feeder enters, exports and be placed on cavity outside through coaxial feed; By cavity and cover plate bonding packaging, obtain complete millimeter wave cavity body filter.

In above-mentioned manufacture method process, also can carry out quick copy making to making the cavity body structure and the covering plate structure that obtain, concrete steps are: the metallic cavity structure of peeling off in step 6) is placed in to container, then in container, pour deployed sticky liquid PDMS into until flood cavity body structure completely, after PDMS is solidified into solid elastomer, the cavity body structure being embedded in PDMS solid elastomer is taken out, in PDMS solid elastomer, just form cavity body structure negative norm, finally select duplicating material to build to solidify by the negative norm in PDMS solid elastomer and turn over mould, finally turning over the molded cavity obtaining, resonant column, isolating frame, cover plate, fixture block surface uniform adheres to the good metal of one deck conductivity, thereby reach the object of batch duplicating cavity body structure, the method of batch duplicating covering plate structure is the same, continue afterwards to carry out operational processes by step 8).

The film that turns over for millimeter wave cavity body filter copies, and we adopt the flexible material PDMS that micro-manufacture field is conventional, applies this material and can accurately copy micro-structure.Described PDMS(English name: Polydimethylsiloxane, Chinese name: dimethyl silicone polymer) be a kind of the macromolecule organic silicon compound, be commonly called organosilicon, there is optical clear, and in the ordinary course of things, be considered to inertia, nontoxic, nonflammable.Dimethyl silicone polymer (PDMS) is a kind of thick liquid in the time of liquid state, is called silicone oil, is a kind of organosiloxane mixture with different polymerization degree chain structure; When solid-state, be a kind of silica gel, nontoxic, hydrophobic inert substance, and be non-flammable, transparent elastomer.Conventionally after mixing with certain proportion (10:1,20:1 or other ratio according to specific requirement) with curing agent by host in laboratory, the mode that utilization vacuumizes makes bubble floating in mixed liquor to surface and breaks, toast at a certain temperature after certain hour again it is solidified, the ratio of host and curing agent, heating-up temperature, heating time, isoparametric difference will be produced the PDMS of different hardness.Use PDMS negative norm, can carry out accurately and fast copying together with structures such as inner resonant columns to filter cavity.After cavity body filter mother matrix (cavity, cover plate etc.) develops, use sticky liquid PDMS to rout up negative norm, then in negative norm, build duplicating material, after duplicating material solidifies, throw off negative norm, complete quick copy.Wherein, that duplicating material curing can be is photosensitive, the mode of temperature-sensitive or solvent evaporates, duplicating material can adopt different materials, this those skilled in the art know that and can realize, can be specifically depending on condition and factors such as mechanical strength, transport properties, material cost and processing technologys when those skilled in the art select.

In addition, in the manufacturing process of this millimeter wave cavity body filter, also coaxial feeder can be made into integrative-structure by same successively photoetching method and resonant column, concrete manufacture method comprises the steps (to bear photoresist as the making of supplementary structure material):

3) layer of metal Seed Layer is evenly adhered in the position that is positioned at coaxial feeder on the negative photoresist of the second layer, and (this metal seed layer is the metal back layer when electroplating coaxial feeder, on metal back layer, carry out plated metal), then continue the 3rd layer of negative photoresist of spin coating to desired height, then H mask plate is placed on the 3rd layer of negative photoresist that spin coating is good, finally aims at H mask plate and carry out photoetching; Wherein, the pattern on H mask plate is: all the other are for blocking except coaxial feed enters, the hollow out of exit for four side plates of cavity, and coaxial feeder blocks, and in cavity, isolating frame and each group of resonant column block, all the other hollow outs; While placing H mask plate, be by the B mask plate pattern complete matching placement of electroplating out in negative to H mask plate pattern and second layer photoresist, and pattern dimension on H mask plate is identical with A mask plate pattern dimension; Through developing, the pattern forming on the 3rd layer of negative photoresist is: on H mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, the height of three layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of negative photoresist, continue the 4th layer of negative photoresist of spin coating to desired height, and then B mask plate is placed on the 4th layer of negative photoresist that spin coating is good, finally aim at B mask plate and carry out photoetching; While placing B mask plate, the H mask plate pattern complete matching placement that B mask plate pattern and the 3rd layer of negative photoresist be powered on and plate out; Through developing, the pattern forming on the 4th layer of negative photoresist is: on B mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, the height of four layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

5) on the 4th layer of negative photoresist, continue the negative photoresist of spin coating layer 5 to desired height, then C mask plate is placed on the negative photoresist of layer 5 that spin coating is good, finally aim at C mask plate and carry out photoetching; Wherein, the pattern on C mask plate is: all the other are for blocking except coaxial feed enters, the hollow out of exit for four side plates of cavity, and in cavity, isolating frame blocks, except minimum one group of resonant column hollow out, remains that resonant column blocks, all the other hollow outs; While placing C mask plate, be by the B mask plate pattern complete matching placement of electroplating out in C mask plate pattern and the 4th layer of negative photoresist, and pattern dimension on C mask plate is identical with A mask plate pattern dimension; Through developing, the pattern forming on the negative photoresist of layer 5 is: on C mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of layer 5;

6) on the negative photoresist of layer 5, continue the negative photoresist of spin coating layer 6 to desired height, then D mask plate is placed on the negative photoresist of layer 6 that spin coating is good, finally aim at D mask plate and carry out photoetching; Wherein, the pattern on D mask plate is: all the other are for blocking except coaxial feed enters, the hollow out of exit for four side plates of cavity, and in cavity, isolating frame blocks, except minimum and second low two groups of resonant column hollow outs, remains that resonant column blocks, all the other hollow outs; While placing D mask plate, be by the C mask plate pattern complete matching placement of electroplating out in negative to D mask plate pattern and layer 5 photoresist, and pattern dimension on D mask plate is identical with A mask plate pattern dimension; Through developing, the pattern forming on the negative photoresist of layer 6 is: on D mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of layer 6;

7) when every layer of negative photoresist of spin coating afterwards carries out lithography process, method repeats rapid 6) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with the D mask plate pattern in step 6), difference is: each layer of mask plate pattern one group of minimum resonant column of hollow out successively using afterwards, until the N mask plate pattern of last one deck is: four side plates of cavity except coaxial feed enters, the hollow out of exit all the other for blocking, in cavity, isolating frame blocks, all the other whole hollow outs; When each mask plate after placing and last N mask plate, the mask plate pattern complete matching of electroplating out in each mask plate and N mask plate pattern and the negative photoresist of last layer separately will be placed, and pattern dimension on each mask plate and N mask plate is identical with A mask plate pattern dimension; Through developing, the pattern forming on the negative photoresist of last one deck is: on N mask plate, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of last one deck;

8) complete after above-mentioned all photoetching, plated metal, the negative photoresist in structure is fully peeled off, obtained the metal three-dimensional structure of resonant column and the isolating frame composition of cavity and inside thereof;

9) carry out the making of cover plate: first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, and on metal level, the negative photoresist of spin coating one deck, to desired height, is then placed in cover plate mask plate on the negative photoresist layer that spin coating is good, finally aims at cover plate mask plate and carries out photoetching; Wherein, the pattern on cover plate mask plate is: two fixture blocks block all the other whole hollow outs; Through developing, the pattern forming on this layer of negative photoresist is: on cover plate mask plate, two fastening block parts partly solidified, that block of hollow out divide formation shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of this layer of negative photoresist; Complete after plating, the negative photoresist in structure is fully peeled off, obtained the metal three-dimensional structure of cover plate and fixture block composition thereof;

10), by the cavity of metal three-dimensional structure and cover plate bonding packaging, obtained complete millimeter wave cavity body filter.

As everyone knows, photoresist is the stock that figure shifts, and is the material for transfer that records mask plate figure, after exposure, on photoresist, can form the figure blocking.Photoresist is divided into positive photoetching rubber and negative photoresist.Photoresist is in the time of exposure, if positive photoetching rubber, the glue exposing can be developed, if negative photoresist is contrary, the region of exposing can not be developed, and the region not being exposed can be developed.Hence one can see that, positive photoetching rubber is also applicable to making the object of millimeter wave filter of the present invention to reach in the inventive method, principle and step method are identical with above-mentioned negative photoresist step method, and what difference was exactly pattern on the selected each mask plate of positive photoetching rubber from negative photoresist is different: the mask plate pattern while adopting positive photoetching rubber is exactly that its openwork part of mask plate pattern and shield portions when adopting negative photoresist arranges conversely.

Further, in above-mentioned each procedure, the method for described even adhesion metal layer has sputter, meteorological precipitation, electroless coating.

Millimeter wave filter volume that the inventive method makes is light and handy, accuracy class is high, frequency is high, bandwidth, signal volume are large, and this filter cavity and cover plate two parts are respectively integrated setting, avoid assembling the error of bringing, improved the performance of filter.The manufacture method of filter of the present invention have processing technology simple, make precision advantages of higher.The clone method of filter of the present invention have copy fast, accuracy of repetition advantages of higher, be convenient to apply in production practices.

Brief description of the drawings

Fig. 1 is cavity and the internal structure schematic diagram thereof of millimeter wave cavity body filter of the present invention.

Fig. 2 is the cavity vertical view of millimeter wave cavity body filter of the present invention.

Fig. 3 is the cavity side view of millimeter wave cavity body filter of the present invention.

Fig. 4 is the covering plate structure schematic diagram of millimeter wave cavity body filter of the present invention.

Fig. 5 is A mask structure being schematic diagram.

Fig. 6 is B mask structure being schematic diagram.

Fig. 7 is C mask structure being schematic diagram.

Fig. 8 is D mask structure being schematic diagram.

Fig. 9 is N mask structure being schematic diagram.

Figure 10 is H mask structure being schematic diagram.

Figure 11 is cover plate mask structure being schematic diagram.

Figure 12 is A ' mask structure being schematic diagram.

Figure 13 is B ' mask structure being schematic diagram.

Figure 14 is C ' mask structure being schematic diagram.

Figure 15 is D ' mask structure being schematic diagram.

Figure 16 is N ' mask structure being schematic diagram.

Figure 17 is H ' mask structure being schematic diagram.

Figure 18 is cover plate mask plate L structural representation.

In figure: 1-cavity, 2-resonant column, 3-cover plate, 4-isolating frame, 5-coupling window, 6-coaxial feed entrance, the outlet of 7-coaxial feed, 8-coaxial feeder, 9-fixture block, 100-cover plate mask plate, 101-A mask plate, 102-B mask plate, 103-C mask plate, 104-D mask plate, 105-N mask plate, 106-H mask plate, 107-A ' mask plate, 108-B ' mask plate, 109-C ' mask plate, 110-D ' mask plate, 111-N ' mask plate, 112-cover plate mask plate L, 113-H ' mask plate.

Embodiment

Below in conjunction with drawings and Examples, the invention will be further described:

A kind of manufacture method of millimeter wave cavity body filter, millimeter wave cavity body filter comprises cavity 1, resonant column 2 and cover plate 3, in cavity 1, be provided with isolating frame 4, the horizontal dividing wall that isolating frame 4 is fixed on perpendicular dividing wall by a perpendicular dividing wall and several square crossings forms, and an end of isolating frame 4 and cavity 1 side plate are fixed, leave coupling window 5 between all the other each ends and cavity 1 side plate; Cavity 1 inner space is divided into some cavitys by isolating frame 4, and resonant column 2 splits and is contained in each cavity; Resonant column 2 be divided into some groups and each group highly not identical; On cavity 1 side plate, offer coaxial feed and enter, export 6,7, enter, export with coaxial feed on one group of resonant column 2 corresponding to 6,7 positions to be respectively connected with a coaxial feeder 8, the other end of coaxial feeder 8 enters, exports 6,7 through coaxial feed and is placed on cavity 1 outside; On cover plate 3, corresponding coaxial feed enters, exports 6,7 position and is provided with and can snaps in coaxial feed and enter, export 6,7 fixture block 9, and cover plate 3 is by fixture block 9 and the tight bonding of cavity 1; This millimeter wave cavity body filter is taking plated metal as structural material, it is the even glue of multilayer on substrate, successively coordinate the some mask plates that are carved with different pattern repeatedly to aim at photoetching, development plating, successively processing, the most curing photoresist structure is peeled off and is made simultaneously.

Taking six cavity millimeter wave cavity body filters as example, make and copy below.It should be noted that, following examples are only a part of embodiment instead of the whole embodiment in the present invention.Based on the embodiment in the present invention, those of ordinary skill in the art is under the prerequisite of not making creative work, and other all embodiment that obtain, all belong to protection scope of the present invention.

Six cavity millimeter wave cavity body filters comprise cavity 1, resonant column 2 and cover plate 3, cavity 1 profile is cuboid, in cavity 1, be provided with isolating frame 4, isolating frame 4 is fixed on by a perpendicular dividing wall and two square crossings the horizontal dividing wall erecting on dividing wall and forms, perpendicular dividing wall is vertically fixed on the base plate center line in cavity 1, the long side plate of perpendicular dividing wall and cavity 1 be arranged in parallel, and a short side plate of one end of perpendicular dividing wall and cavity 1 is fixed, leave coupling window 5 between the other end and cavity 1 another short side plate; Two ends and the long side sheet room of cavity 1 that square crossing is fixed on the horizontal dividing wall on perpendicular dividing wall leave coupling window 5; Cavity 1 inside is isolated frame 4 and is divided into six cavitys, in each cavity, be provided with one with the fixing resonant column 2 of cavity 1 base plate; Six resonant columns 2 are divided into three groups, near with two resonant columns 2 of the fixing short side plate of perpendicular dividing wall be first group, two resonant columns 2 near another short side plate are second group, two resonant columns 2 in the middle of being positioned at are the 3rd group, and three groups of resonant column height differences: first group higher than second group, second group higher than the 3rd group; On two long side plates of cavity 1, the position symmetry of corresponding first group of resonant column 2 offers coaxial feed and enters, exports 6,7, on first group of resonant column 2, be respectively connected with respectively a coaxial feeder 8, the other end of coaxial feeder 8 enters, exports 6,7 through coaxial feed and is placed on cavity 1 outside; On cover plate 3, corresponding coaxial feed enters, exports 6,7 position and is provided with and can snaps in coaxial feed and enter, export 6,7 fixture block 9, and cover plate 3 is by fixture block 9 and the tight bonding of cavity 1.

1, when use negative photoresist for auxiliary material and coaxial feeder 8 with resonant column 2 during for non-Integral design (that is: coaxial feeder 8 was for being fixed on resonant column 2 afterwards), its manufacture method comprises the steps:

1) first get substrate, evenly sputter on substrate (meteorological precipitation, electroless coating) layer of metal Seed Layer, on metal level, the negative photoresist of spin coating ground floor, to desired height, is then placed in A mask plate 101 on the negative photoresist of ground floor that spin coating is good, finally aims at A mask plate 101 and carries out photoetching; Wherein, the pattern on A mask plate 101 is: four side plates of cavity 1 block, and in cavity, isolating frame 4 and each group of resonant column 2 block, all the other hollow outs; Through developing, the pattern forming on the negative photoresist of ground floor is: on A mask plate 101, the part partly solidified, that block of hollow out forms shrinkage pool, and expose four side plates, the isolating frame 4 of cavity 1 and respectively organize resonant column 2 at on-chip metal seed layer, the height of negative photoresist to plated metal in shrinkage pool to ground floor;

2) on the negative photoresist of ground floor, continue the negative photoresist of the spin coating second layer to desired height, then B mask plate 102 is placed on the negative photoresist of the second layer that spin coating is good, finally aim at B mask plate 102 and carry out photoetching; Wherein, the pattern on B mask plate 102 is: all the other are for blocking except coaxial feed enters, exports 6,7 place's hollow outs for four side plates of cavity 1, and the interior isolating frame 4 of cavity 1 and each group of resonant column 2 block, all the other hollow outs; While placing B mask plate 102, be by the A mask plate of electroplating out in negative to B mask plate 102 patterns and ground floor photoresist 101 pattern complete matchings placements, and pattern dimension on B mask plate 102 is identical with A mask plate 101 pattern dimensions; Through developing, the pattern forming on the negative photoresist of the second layer is: on B mask plate 102, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of the second layer;

3) on the negative photoresist of the second layer, continue the 3rd layer of negative photoresist of spin coating to desired height, then C mask plate 103 is placed on the 3rd layer of negative photoresist that spin coating is good, finally aim at C mask plate 103 and carry out photoetching; Wherein, the pattern on C mask plate 103 is: all the other are for blocking except coaxial feed enters, exports 6,7 place's hollow outs for four side plates of cavity 1, and the interior isolating frame 4 of cavity 1 blocks, except minimum one group of resonant column 2 hollow out, remaining resonant column 2 blocks, all the other are hollow out; While placing C mask plate 103, be by the B mask plate of electroplating out in negative to C mask plate 103 patterns and second layer photoresist 102 pattern complete matchings placements, and pattern dimension on C mask plate 103 is identical with A mask plate 101 pattern dimensions; Through developing, the pattern forming on the 3rd layer of negative photoresist is: on C mask plate 103, the part partly solidified, that block of hollow out forms shrinkage pool, the height of three layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of negative photoresist, continue the 4th layer of negative photoresist of spin coating to desired height, then D mask plate 104 is placed on the 4th layer of negative photoresist that spin coating is good, finally aim at D mask plate 104 and carry out photoetching; Wherein, pattern on D mask plate 104 is: all the other are for blocking except coaxial feed enters, exports 6,7 place's hollow outs for four side plates of cavity 1, and the interior isolating frame 4 of cavity 1 blocks, except minimum and second low two groups of resonant column 2 hollow outs, remains that resonant column 2 blocks, all the other hollow outs; While placing D mask plate 104, be by the C mask plate of electroplating out in D mask plate 104 patterns and the 3rd layer of negative photoresist 103 pattern complete matchings placements, and pattern dimension on D mask plate 104 is identical with A mask plate 101 pattern dimensions; Through developing, the pattern forming on the 4th layer of negative photoresist is: on D mask plate 104, the part partly solidified, that block of hollow out forms shrinkage pool, the height of four layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

5) when every layer of negative photoresist of spin coating afterwards carries out lithography process, method repeats rapid 4) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with D mask plate 104 patterns in step 4), difference is: each layer of mask plate pattern one group of minimum resonant column 2 of hollow out successively using afterwards, until N mask plate 105 patterns of last one deck are: four side plates of cavity 1 except coaxial feed enters, exports 6,7 place's hollow outs all the other for blocking, the interior isolating frame 4 of cavity 1 blocks, all the other whole hollow outs; When each mask plate after placing and last N mask plate 105, the mask plate pattern complete matching of electroplating out in each mask plate and N mask plate 105 patterns and the negative photoresist of last layer separately will be placed, and pattern dimension on each mask plate and N mask plate 105 is identical with A mask plate 101 pattern dimensions; Through developing, the pattern forming on the negative photoresist of last one deck is: on N mask plate 105, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of last one deck;

6) complete after above-mentioned all photoetching, plated metal, the negative photoresist solidifying in structure is fully peeled off, obtained the resonant column 2 of cavity 1 and inside thereof and the metal three-dimensional structure that isolating frame 4 forms;

7) carry out the making of cover plate 3: first get substrate, sputter on substrate (meteorological precipitation, electroless coating) layer of metal Seed Layer, and spin coating one deck is born photoresist to desired height on metal level, then cover plate mask plate 100 is placed on the negative photoresist layer that spin coating is good, finally aims at cover plate mask plate 100 and carry out photoetching; Wherein, the pattern on cover plate mask plate 100 is: two fixture blocks 9 block all the other whole hollow outs; Through developing, the pattern forming on this layer of negative photoresist is: on cover plate mask plate 100, two fixture blocks, 9 parts partly solidified, that block of hollow out form shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of this layer of negative photoresist; Complete after plating, the negative photoresist in structure is fully peeled off, obtained the metal three-dimensional structure that cover plate 3 and fixture block 9 thereof form;

8) entering, exporting with coaxial feed on one group of resonant column 2 corresponding to 6,7 positions to be respectively connected with a coaxial feeder 8, the other end of coaxial feeder 8 enters, exports 6,7 through coaxial feed and is placed on cavity 1 outside; By cavity 1 and cover plate 3 bonding packagings, obtain complete millimeter wave cavity body filter.

After six cavity millimeter wave cavity body filters make with above-mentioned steps, after manufacturing process in use the manufacture of above-mentioned steps method except continuing, can also carry out quick copy manufacture, concrete grammar is as follows:

In above-mentioned steps 7) carry out afterwards following steps operation: cavity 1 metal structure obtaining after peeling off in step 6) is placed in to container, then to pouring deployed sticky liquid PDMS in container, until flood cavity 1 structure completely, (PDMS that the present embodiment uses is the SYLGARD 184 type silicon rubber of being produced by U.S. Dow Corning Corp, the bi-component external member product that it is made up of liquid component, comprises prepolymer and curing agent.When use, first prepolymer and curing agent are mixed according to the volume ratio of 20:1, when mixing, need slowly to stir, reduce the mixed volume of air, then the PDMS liquid mixing is placed in vacuum drying chamber keep vacuumizing state until in liquid without bubble, the about 5-15 minute of this process need), then container is placed on the drip pan of 100 DEG C and is heating and curing 1 hour, turn to after solid until PDMS liquid rotating, PDMS solid is taken out from container, then cavity 1 structure being embedded in PDMS solid elastomer is taken out, in PDMS solid elastomer, just form cavity 1 structure negative norm, finally select duplicating material to build to solidify by the negative norm in PDMS solid elastomer and turn over mould, finally turning over the molded cavity 1 obtaining, resonant column 2, isolating frame 4, cover plate 3, fixture block 9 surface uniform sputters (meteorological precipitation, electroless coating) the good metal of one deck conductivity, thereby reach the object of batch duplicating cavity 1 structure, the method of batch duplicating cover plate 3 structures is the same, continue by above-mentioned steps 8 afterwards) carry out operational processes.

2, when use is born photoresist for auxiliary material and in the time that coaxial feeder 8 and resonant column 2 are integrated design (that is: coaxial feeder is made into integrative-structure by same successively photoetching method and resonant column), its manufacture method comprises the steps:

1) first get substrate, the method that precipitates (sputter, electroless coating) by meteorology on substrate is evenly adhered to layer of metal Seed Layer, on metal level, the negative photoresist of spin coating ground floor is to desired height, then A mask plate 101 is placed on the negative photoresist of ground floor that spin coating is good, finally aims at A mask plate 101 and carry out photoetching; Wherein, the pattern on A mask plate 101 is: four side plates of cavity 1 block, and in cavity, isolating frame 4 and each group of resonant column 2 block, all the other hollow outs; Through developing, the pattern forming on the negative photoresist of ground floor is: on A mask plate 101, the part partly solidified, that block of hollow out forms shrinkage pool, and expose four side plates, the isolating frame 4 of cavity 1 and respectively organize resonant column 2 at on-chip metal seed layer, the height of negative photoresist to plated metal in shrinkage pool to ground floor;

3) method that (sputter, electroless coating) precipitated by meteorology in the position of coaxial feeder 8 on the negative photoresist of the second layer is evenly adhered to layer of metal Seed Layer, then continue the 3rd layer of negative photoresist of spin coating to desired height, then H mask plate 106 is placed on the 3rd layer of negative photoresist that spin coating is good, finally aims at H mask plate 106 and carry out photoetching; Wherein, the pattern on H mask plate 106 is: all the other are for blocking except coaxial feed enters, exports 6,7 place's hollow outs for four side plates of cavity 1, and coaxial feeder 8 blocks, and the interior isolating frame 4 of cavity 1 and each group of resonant column 2 block, all the other hollow outs; While placing H mask plate 106, be by the B mask plate of electroplating out in negative to H mask plate 106 patterns and second layer photoresist 102 pattern complete matchings placements, and pattern dimension on H mask plate 106 is identical with A mask plate 101 pattern dimensions; Through developing, the pattern forming on the 3rd layer of negative photoresist is: on H mask plate 106, the part partly solidified, that block of hollow out forms shrinkage pool, the height of three layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of negative photoresist, continue the 4th layer of negative photoresist of spin coating to desired height, and then B mask plate 102 is placed on the 4th layer of negative photoresist that spin coating is good, finally aim at B mask plate 102 and carry out photoetching; While placing B mask plate 102, the H mask plate 106 pattern complete matchings placements that B mask plate 102 patterns and the 3rd layer of negative photoresist be powered on and plate out; Through developing, the pattern forming on the 4th layer of negative photoresist is: on B mask plate 102, the part partly solidified, that block of hollow out forms shrinkage pool, the height of four layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

5) on the 4th layer of negative photoresist, continue the negative photoresist of spin coating layer 5 to desired height, then C mask plate 103 is placed on the negative photoresist of layer 5 that spin coating is good, finally aim at C mask plate 103 and carry out photoetching; Wherein, the pattern on C mask plate 103 is: all the other are for blocking except coaxial feed enters, exports 6,7 place's hollow outs for four side plates of cavity 1, and the interior isolating frame 4 of cavity 1 blocks, except minimum one group of resonant column 2 hollow out, remains that resonant column 2 blocks, all the other hollow outs; While placing C mask plate 103, be by the B mask plate of electroplating out in C mask plate 103 patterns and the 4th layer of negative photoresist 102 pattern complete matchings placements, and pattern dimension on C mask plate 103 is identical with A mask plate 101 pattern dimensions; Through developing, the pattern forming on the negative photoresist of layer 5 is: on C mask plate 103, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of layer 5;

6) on the negative photoresist of layer 5, continue the negative photoresist of spin coating layer 6 to desired height, then D mask plate 104 is placed on the negative photoresist of layer 6 that spin coating is good, finally aim at D mask plate 104 and carry out photoetching; Wherein, pattern on D mask plate 104 is: all the other are for blocking except coaxial feed enters, exports 6,7 place's hollow outs for four side plates of cavity 1, and the interior isolating frame 4 of cavity 1 blocks, except minimum and second low two groups of resonant column 2 hollow outs, remains that resonant column 2 blocks, all the other hollow outs; While placing D mask plate 104, be by the C mask plate of electroplating out in negative to D mask plate 104 patterns and layer 5 photoresist 103 pattern complete matchings placements, and pattern dimension on D mask plate 104 is identical with A mask plate 101 pattern dimensions; Through developing, the pattern forming on the negative photoresist of layer 6 is: on D mask plate 104, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of layer 6;

7) when every layer of negative photoresist of spin coating afterwards carries out lithography process, method repeats rapid 6) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with D mask plate 104 patterns in step 6), difference is: each layer of mask plate pattern one group of minimum resonant column 2 of hollow out successively using afterwards, until N mask plate 105 patterns of last one deck are: four side plates of cavity 1 except coaxial feed enters, exports 6,7 place's hollow outs all the other for blocking, the interior isolating frame 4 of cavity 1 blocks, all the other whole hollow outs; When each mask plate after placing and last N mask plate 105, the mask plate pattern complete matching of electroplating out in each mask plate and N mask plate 105 patterns and the negative photoresist of last layer separately will be placed, and pattern dimension on each mask plate and N mask plate 105 is identical with A mask plate 101 pattern dimensions; Through developing, the pattern forming on the negative photoresist of last one deck is: on N mask plate 105, the part partly solidified, that block of hollow out forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of last one deck;

8) complete after above-mentioned all photoetching, plated metal, the negative photoresist in structure is fully peeled off, obtained the resonant column 2 of cavity 1 and inside thereof and the metal three-dimensional structure that isolating frame 4 forms;

9) carry out the making of cover plate 3: first get substrate, the method that precipitates (sputter, electroless coating) by meteorology on substrate is evenly adhered to layer of metal Seed Layer, and spin coating one deck is born photoresist to desired height on metal level, then cover plate mask plate 100 is placed on the negative photoresist layer that spin coating is good, finally aims at cover plate mask plate 100 and carry out photoetching; Wherein, the pattern on cover plate mask plate 100 is: two fixture blocks 9 block all the other whole hollow outs; Through developing, the pattern forming on this layer of negative photoresist is: on cover plate mask plate 100, two fixture blocks, 9 parts partly solidified, that block of hollow out form shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of this layer of negative photoresist; Complete after plating, the negative photoresist in structure is fully peeled off, obtained the metal three-dimensional structure that cover plate 3 and fixture block 9 thereof form;

3, when use positive photoetching rubber for auxiliary material and coaxial feeder 8 with resonant column 2 during for non-Integral design (that is: coaxial feeder 8 was for being fixed on resonant column 2 afterwards), its manufacture method comprises the steps:

1) first get substrate, evenly sputter on substrate (meteorological precipitation, electroless coating) layer of metal Seed Layer, on metal level, spin coating ground floor positive photoetching rubber is to desired height, then A ' mask plate 107 is placed on the ground floor positive photoetching rubber that spin coating is good, finally aims at A ' mask plate 107 and carry out photoetching; Wherein, the pattern on A ' mask plate 107 is: four side plate hollow outs of cavity 1, and isolating frame 4 and each group of resonant column 2 hollow outs in cavity, all the other block; Through developing, the pattern forming on ground floor positive photoetching rubber is: the part partly solidified, hollow out of blocking on A ' mask plate 107 forms shrinkage pool, and expose four side plates, the isolating frame 4 of cavity 1 and respectively organize resonant column 2 at on-chip metal seed layer, the height to plated metal in shrinkage pool to ground floor positive photoetching rubber;

2) on ground floor positive photoetching rubber, continue spin coating second layer positive photoetching rubber to desired height, then B ' mask plate 108 is placed on the second layer positive photoetching rubber that spin coating is good, finally aim at B ' mask plate 108 and carry out photoetching; Wherein, the pattern on B ' mask plate 108 is: four side plates of cavity 1 except coaxial feed enter, export 6,7 places block all the other for hollow out, the interior isolating frame 4 of cavity 1 and each group of resonant column 2 hollow outs, all the other block; While placing B ' mask plate 108, be by the 107 pattern complete matchings placements of A ' mask plate of electroplating out in B ' mask plate 108 patterns and ground floor positive photoetching rubber, and pattern dimension on B ' mask plate 108 is identical with A ' mask plate 107 pattern dimensions; Through developing, the pattern forming on second layer positive photoetching rubber is: the part partly solidified, hollow out of blocking on B ' mask plate 108 forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of second layer positive photoetching rubber;

3) on second layer positive photoetching rubber, continue the 3rd layer of positive photoetching rubber of spin coating to desired height, then C ' mask plate 109 is placed on the 3rd layer of positive photoetching rubber that spin coating is good, finally aim at C ' mask plate 109 and carry out photoetching; Wherein, the pattern on C ' mask plate 109 is: four side plates of cavity 1 except coaxial feed enter, export 6,7 places block all the other for hollow out, isolating frame 4 hollow outs in cavity, except minimum one group of resonant column 2 blocks residue resonant column 2 hollow outs, all the other block; While placing C ' mask plate 109, be by the 108 pattern complete matchings placements of B ' mask plate of electroplating out in C ' mask plate 109 patterns and second layer positive photoetching rubber, and pattern dimension on C ' mask plate 109 is identical with A ' mask plate 107 pattern dimensions; Through developing, the pattern forming on the 3rd layer of positive photoetching rubber is: the part partly solidified, hollow out of blocking on C ' mask plate 109 forms shrinkage pool, the height of three layers of positive photoetching rubber of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of positive photoetching rubber, continue the 4th layer of positive photoetching rubber of spin coating to desired height, then D ' mask plate 110 is placed on the 4th layer of positive photoetching rubber that spin coating is good, finally aim at D ' mask plate 110 and carry out photoetching; Wherein, pattern on D ' mask plate 110 is: four side plates of cavity 1 except coaxial feed enter, export 6,7 places block all the other for hollow out, interior isolating frame 4 hollow outs of cavity 1, except minimum and second low two groups of resonant columns 2 block residue resonant column 2 hollow outs, all the other block; While placing D ' mask plate 110, be by the 109 pattern complete matchings placements of C ' mask plate of electroplating out in D ' mask plate 110 patterns and the 3rd layer of positive photoetching rubber, and pattern dimension on D ' mask plate 110 is identical with A ' mask plate 107 pattern dimensions; Through developing, the pattern forming on the 4th layer of positive photoetching rubber is: the part partly solidified, hollow out of blocking on D ' mask plate 110 forms shrinkage pool, the height of four layers of positive photoetching rubber of plated metal to the in the most backward shrinkage pool;

5) when every layer of positive photoetching rubber of spin coating afterwards carries out lithography process, method repeats rapid 4) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with D ' mask plate 110 patterns in step 4), difference is: the each layer of mask plate pattern using blocks one group of minimum resonant column 2 successively afterwards, until N ' mask plate 111 patterns of last one deck are: except coaxial feed enters, export 6,7 places, all the other are hollow out to four side plates of cavity 1 blocking, interior isolating frame 4 hollow outs of cavity 1, all the other all block; When each mask plate after placing and last N ' mask plate 111, the mask plate pattern complete matching of electroplating out in each mask plate and N ' mask plate 111 patterns and last layer positive photoetching rubber separately will be placed, and pattern dimension on each mask plate and N ' mask plate 111 is identical with A1 mask plate 107 pattern dimensions; Through developing, the pattern forming on last one deck positive photoetching rubber is: the part partly solidified, hollow out of blocking on N ' mask plate 111 forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of last one deck positive photoetching rubber;

6) complete after above-mentioned all photoetching, plated metal, positive photoetching rubber curing in structure is fully peeled off, obtained the resonant column 2 of cavity 1 and inside thereof and the metal three-dimensional structure that isolating frame 4 forms;

7) carry out the making of cover plate 3: first get substrate, evenly sputter on substrate (meteorological precipitation, electroless coating) layer of metal Seed Layer, and on metal level spin coating one deck positive photoetching rubber to desired height, then cover plate mask plate L112 is placed on the positive photoresist layer that spin coating is good, finally aims at cover plate mask plate L112 and carry out photoetching; Wherein, the pattern on cover plate mask plate L112 is: all the other all block two fixture block 9 hollow outs; Through developing, the pattern forming on this layer of positive photoetching rubber is: two fixture blocks, 9 parts partly solidified, hollow out of blocking on cover plate mask plate L112 form shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of this layer of positive photoetching rubber; Complete after plating, the positive photoetching rubber in structure is fully peeled off, obtained the metal three-dimensional structure that cover plate 3 and fixture block 9 thereof form;

In above-mentioned steps 7) carry out afterwards following steps operation: cavity 1 metal structure obtaining after peeling off in step 6) is placed in to container, then to pouring deployed sticky liquid PDMS in container, until flood cavity 1 structure completely, (PDMS that the present embodiment uses is the SYLGARD 184 type silicon rubber of being produced by U.S. Dow Corning Corp, the bi-component external member product that it is made up of liquid component, comprises prepolymer and curing agent.When use, first prepolymer and curing agent are mixed according to the volume ratio of 20:1, when mixing, need slowly to stir, reduce the mixed volume of air, then the PDMS liquid mixing is placed in vacuum drying chamber keep vacuumizing state until in liquid without bubble, the about 5-15 minute of this process need), then container is placed on the drip pan of 100 DEG C and is heating and curing 1 hour, turn to after solid until PDMS liquid rotating, PDMS solid is taken out from container, then cavity 1 structure being embedded in PDMS solid elastomer is taken out, in PDMS solid elastomer, just form cavity 1 structure negative norm, finally select duplicating material to build to solidify by the negative norm in PDMS solid elastomer and turn over mould, finally turning over the molded cavity 1 obtaining, resonant column 2, isolating frame 4, cover plate 3, the good metal of fixture block 9 surface uniform sputter one deck conductivity, thereby reach the object of batch duplicating cavity 1 structure, the method of batch duplicating cover plate 3 structures is the same, continue by above-mentioned steps 8 afterwards) carry out operational processes.

4, when use positive photoetching rubber for auxiliary material and when coaxial feeder 8 and resonant column 2 be integrated design time (that is: coaxial feeder is made into integrative-structure by same successively photoetching method and resonant column), its manufacture method comprises the steps:

1) first get substrate, on substrate, evenly adhere to layer of metal Seed Layer by the method for electroless coating (sputter, meteorological precipitation), on metal level, spin coating ground floor positive photoetching rubber is to desired height, then A ' mask plate 107 is placed on the ground floor positive photoetching rubber that spin coating is good, finally aims at A ' mask plate 107 and carry out photoetching; Wherein, the pattern on A ' mask plate 107 is: four side plate hollow outs of cavity 1, and isolating frame 4 and each group of resonant column 2 hollow outs in cavity, all the other block; Through developing, the pattern forming on ground floor positive photoetching rubber is: the part partly solidified, hollow out of blocking on A ' mask plate 101 forms shrinkage pool, and expose four side plates, the isolating frame 4 of cavity 1 and respectively organize resonant column 2 at on-chip metal seed layer, the height to plated metal in shrinkage pool to ground floor positive photoetching rubber;

3) layer of metal Seed Layer is evenly adhered to by the method for electroless coating (sputter, meteorological precipitation) in the position that is positioned at coaxial feeder 8 on second layer positive photoetching rubber, then continue the 3rd layer of positive photoetching rubber of spin coating to desired height, then H ' mask plate 113 is placed on the 3rd layer of positive photoetching rubber that spin coating is good, finally aims at H ' mask plate 113 and carry out photoetching; Wherein, the pattern on H ' mask plate 113 is: four side plates of cavity 1 except coaxial feed enter, export 6,7 places block all the other for hollow out, coaxial feeder 8 hollow outs, the interior isolating frame 4 of cavity 1 and each group of resonant column 2 hollow outs, all the other block; While placing H ' mask plate 113, be by the 108 pattern complete matchings placements of B ' mask plate of electroplating out in H ' mask plate 113 patterns and second layer positive photoetching rubber, and pattern dimension on H ' mask plate 113 is identical with A ' mask plate 107 pattern dimensions; Through developing, the pattern forming on the 3rd layer of positive photoetching rubber is: the part partly solidified, hollow out of blocking on H ' mask plate 113 forms shrinkage pool, the height of three layers of positive photoetching rubber of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of positive photoetching rubber, continue the 4th layer of positive photoetching rubber of spin coating to desired height, and then B ' mask plate 108 is placed on the 4th layer of positive photoetching rubber that spin coating is good, finally aim at B ' mask plate 108 and carry out photoetching; While placing B ' mask plate 108, H ' mask plate 113 pattern complete matchings placements that B ' mask plate 108 patterns and the 3rd layer of positive photoetching rubber be powered on and plate out; Through developing, the pattern forming on the 4th layer of positive photoetching rubber is: the part partly solidified, hollow out of blocking on B ' mask plate 108 forms shrinkage pool, the height of four layers of positive photoetching rubber of plated metal to the in the most backward shrinkage pool;

5) on the 4th layer of positive photoetching rubber, continue spin coating layer 5 positive photoetching rubber to desired height, then C ' mask plate 109 is placed on the layer 5 positive photoetching rubber that spin coating is good, finally aim at C ' mask plate 109 and carry out photoetching; Wherein, the pattern on C ' mask plate 109 is: four side plates of cavity 1 except coaxial feed enter, export 6,7 places block all the other for hollow out, interior isolating frame 4 hollow outs of cavity 1, except minimum one group of resonant column 2 blocks residue resonant column 2 hollow outs, all the other block; While placing C ' mask plate 109, be by the 108 pattern complete matchings placements of B ' mask plate of electroplating out in C ' mask plate 109 patterns and the 4th layer of positive photoetching rubber, and pattern dimension on C ' mask plate 109 is identical with A ' mask plate 107 pattern dimensions; Through developing, the pattern forming on layer 5 positive photoetching rubber is: the part partly solidified, hollow out of blocking on C ' mask plate 109 forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of layer 5 positive photoetching rubber;

6) on layer 5 positive photoetching rubber, continue spin coating layer 6 positive photoetching rubber to desired height, then D ' mask plate 110 is placed on the layer 6 positive photoetching rubber that spin coating is good, finally aim at D ' mask plate 110 and carry out photoetching; Wherein, pattern on D ' mask plate 110 is: four side plates of cavity 1 except coaxial feed enter, export 6,7 places block all the other for hollow out, interior isolating frame 4 hollow outs of cavity 1, except minimum and second low two groups of resonant columns 2 block residue resonant column 2 hollow outs, all the other block; While placing D ' mask plate 110, be by the 109 pattern complete matchings placements of C ' mask plate of electroplating out in D ' mask plate 110 patterns and layer 5 positive photoetching rubber, and pattern dimension on D ' mask plate 110 is identical with A ' mask plate 107 pattern dimensions; Through developing, the pattern forming on layer 6 positive photoetching rubber is: the part partly solidified, hollow out of blocking on D ' mask plate 110 forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of layer 6 positive photoetching rubber;

7) when every layer of positive photoetching rubber of spin coating afterwards carries out lithography process, method repeats rapid 6) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with D ' mask plate 110 patterns in step 6), difference is: the each layer of mask plate pattern using blocks one group of minimum resonant column 2 successively afterwards, until N ' mask plate 111 patterns of last one deck are: except coaxial feed enters, export 6,7 places, all the other are hollow out to four side plates of cavity 1 blocking, interior isolating frame 4 hollow outs of cavity 1, all the other all block; When each mask plate after placing and last N ' mask plate 111, the mask plate pattern complete matching of electroplating out in each mask plate and N ' mask plate 111 patterns and last layer positive photoetching rubber separately will be placed, and pattern dimension on each mask plate and N ' mask plate 111 is identical with A ' mask plate 107 pattern dimensions; Through developing, the pattern forming on last one deck positive photoetching rubber is: the part partly solidified, hollow out of blocking on N ' mask plate 111 forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of last one deck positive photoetching rubber;

8) complete after above-mentioned all photoetching, plated metal, the positive photoetching rubber in structure is fully peeled off, obtained the resonant column 2 of cavity 1 and inside thereof and the metal three-dimensional structure that isolating frame 4 forms;

9) carry out the making of cover plate 3: first get substrate, on substrate, evenly adhere to layer of metal Seed Layer by the method for electroless coating (sputter, meteorological precipitation), and on metal level spin coating one deck positive photoetching rubber to desired height, then cover plate mask plate L112 is placed on the positive photoresist layer that spin coating is good, finally aims at cover plate mask plate L112 and carry out photoetching; Wherein, the pattern on cover plate mask plate L112 is: all the other all block two fixture block 9 hollow outs; Through developing, the pattern forming on this layer of positive photoetching rubber is: two fixture blocks, 9 parts partly solidified, hollow out of blocking on cover plate mask plate L112 form shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of this layer of positive photoetching rubber; Complete after plating, the positive photoetching rubber in structure is fully peeled off, obtained the metal three-dimensional structure that cover plate 3 and fixture block 9 thereof form;

10) by the cavity of metal three-dimensional structure 1 and cover plate 3 bonding packagings, obtained complete millimeter wave cavity body filter.

Claims

1. the manufacture method of a millimeter wave cavity body filter, millimeter wave cavity body filter comprises cavity (1), resonant column (2) and cover plate (3), in cavity (1), be provided with isolating frame (4), the horizontal dividing wall that isolating frame (4) is fixed on perpendicular dividing wall by a perpendicular dividing wall and several square crossings forms, and side plate is fixed for an end of isolating frame (4) and cavity (1), leave coupling window (5) between all the other each ends and cavity (1) side plate; Cavity (1) inner space is divided into some cavitys by isolating frame (4), and resonant column (2) splits and is contained in each cavity; Resonant column (2) be divided into some groups and each group highly not identical; On cavity (1) side plate, offer coaxial feed and enter, export (6,7), enter, export with coaxial feed on one group of resonant column (2) corresponding to (6,7) position to be respectively connected with a coaxial feeder (8), the other end of coaxial feeder (8) enters, exports (6,7) through coaxial feed and is placed on cavity (1) outside; The position that the upper corresponding coaxial feed of cover plate (3) enters, export (6,7) is provided with the fixture block (9) that can snap in coaxial feed and enter, export (6,7), and cover plate (3) is by fixture block (9) and the tight bonding of cavity (1); It is characterized in that: this millimeter wave cavity body filter is taking plated metal as structural material, it is the even glue of multilayer on substrate, successively coordinate the some mask plates that are carved with different pattern repeatedly to aim at photoetching, development plating, successively processing, the most curing photoresist structure is peeled off and is made; Concrete manufacture method comprises the steps:

1) first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, on metal seed layer, the negative photoresist of spin coating ground floor is to desired height, then A mask plate (101) is placed on the negative photoresist of ground floor that spin coating is good, finally aims at A mask plate (101) and carry out photoetching; Wherein, the pattern on A mask plate (101) is: four side plates of cavity (1) block, and in cavity, isolating frame (4) and each group of resonant column (2) block, all the other hollow outs; Through developing, the pattern forming on the negative photoresist of ground floor is: the part partly solidified, that block of the upper hollow out of A mask plate (101) forms shrinkage pool, and four side plates, isolating frame (4) and the each group of resonant column (2) that expose cavity (1) be at on-chip metal seed layer, the height to plated metal in shrinkage pool to the negative photoresist of ground floor;

2) on the negative photoresist of ground floor, continue the negative photoresist of the spin coating second layer to desired height, then B mask plate (102) is placed on the negative photoresist of the second layer that spin coating is good, finally aim at B mask plate (102) and carry out photoetching; Wherein, pattern on B mask plate (102) is: four side plates of cavity (1) are located hollow out all the other for blocking except coaxial feed enters, exports (6,7), the interior isolating frame of cavity (1) (4) and each group of resonant column (2) block, all the other hollow outs; While placing B mask plate (102), A mask plate (101) the pattern complete matching of electroplating out in negative to B mask plate (102) pattern and ground floor photoresist will be placed, and pattern dimension on B mask plate (102) is identical with A mask plate (101) pattern dimension; Through developing, the pattern forming on the negative photoresist of the second layer is: the part partly solidified, that block of the upper hollow out of B mask plate (102) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of the second layer;

3) on the negative photoresist of the second layer, continue the 3rd layer of negative photoresist of spin coating to desired height, then C mask plate (103) is placed on the 3rd layer of negative photoresist that spin coating is good, finally aim at C mask plate (103) and carry out photoetching; Wherein, pattern on C mask plate (103) is: four side plates of cavity (1) are located hollow out all the other for blocking except coaxial feed enters, exports (6,7), and the interior isolating frame of cavity (1) (4) blocks, except minimum one group of resonant column (2) hollow out, remaining resonant column (2) blocks, all the other are hollow out; While placing C mask plate (103), B mask plate (102) the pattern complete matching of electroplating out in negative to C mask plate (103) pattern and second layer photoresist will be placed, and pattern dimension on C mask plate (103) is identical with A mask plate (101) pattern dimension; Through developing, the pattern forming on the 3rd layer of negative photoresist is: the part partly solidified, that block of the upper hollow out of C mask plate (103) forms shrinkage pool, the height of three layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of negative photoresist, continue the 4th layer of negative photoresist of spin coating to desired height, then D mask plate (104) is placed on the 4th layer of negative photoresist that spin coating is good, finally aim at D mask plate (104) and carry out photoetching; Wherein, pattern on D mask plate (104) is: four side plates of cavity (1) are located hollow out all the other for blocking except coaxial feed enters, exports (6,7), and the interior isolating frame of cavity (1) (4) blocks, except minimum and second low two groups of resonant columns (2) hollow out, remains that resonant column (2) blocks, all the other hollow outs; While placing D mask plate (104), C mask plate (103) the pattern complete matching electroplated out in D mask plate (104) pattern and the 3rd layer of negative photoresist will be placed, and pattern dimension on D mask plate (104) is identical with A mask plate (101) pattern dimension; Through developing, the pattern forming on the 4th layer of negative photoresist is: the part partly solidified, that block of the upper hollow out of D mask plate (104) forms shrinkage pool, the height of four layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

5) when every layer of negative photoresist of spin coating afterwards carries out lithography process, method repeats rapid 4) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with D mask plate (104) pattern in step 4), difference is: the each layer of mask plate pattern one group of minimum resonant column of hollow out (2) successively using afterwards, until N mask plate (105) pattern of last one deck is: four side plates of cavity (1) are located hollow out all the other for blocking except coaxial feed enters, exports (6,7), the interior isolating frame of cavity (1) (4) blocks, all the other whole hollow outs; 6) when the each mask plate after placing and last N mask plate (105), the mask plate pattern complete matching of electroplating out in each mask plate and N mask plate (105) pattern and the negative photoresist of last layer separately will be placed, and pattern dimension on each mask plate and N mask plate (105) is identical with A mask plate (101) pattern dimension; Through developing, the pattern forming on the negative photoresist of last one deck is: the part partly solidified, that block of the upper hollow out of N mask plate (105) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of last one deck;

6) complete after above-mentioned all photoetching, plated metal, the negative photoresist solidifying in structure is fully peeled off, obtained the metal three-dimensional structure of resonant column (2) and isolating frame (4) composition of cavity (1) and inside thereof;

7) carry out the making of cover plate (3): first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, and spin coating one deck is born photoresist to desired height on metal seed layer, then cover plate mask plate (100) is placed on the negative photoresist layer that spin coating is good, finally aims at cover plate mask plate (100) and carry out photoetching; Wherein, the pattern on cover plate mask plate (100) is: two fixture blocks (9) block all the other whole hollow outs; Through developing, the pattern forming on this layer of negative photoresist is: two fixture blocks (9) part partly solidified, that block of the upper hollow out of cover plate mask plate (100) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of this layer of negative photoresist; Complete after plating, the negative photoresist in structure is fully peeled off, obtained the metal three-dimensional structure of cover plate (3) and fixture block (9) composition thereof;

8) entering, exporting with coaxial feed on one group of resonant column (2) corresponding to (6,7) position to be respectively connected with a coaxial feeder (8), the other end of coaxial feeder (8) enters, exports (6,7) through coaxial feed and is placed on cavity (1) outside; By cavity (1) and cover plate (3) bonding packaging, obtain complete millimeter wave cavity body filter.

2. according to the manufacture method of the millimeter wave cavity body filter described in claim 1, it is characterized in that, after step 7), also comprise the steps: the metallic cavity of peeling off in step 6) (1) structure to be placed in container, then in container, pour deployed sticky liquid PDMS into until flood cavity (1) structure completely, after PDMS is solidified into solid elastomer, cavity (1) structure being embedded in PDMS solid elastomer is taken out, in PDMS solid elastomer, just form cavity (1) structure negative norm, finally select duplicating material to build to solidify by the negative norm in PDMS solid elastomer and turn over mould, finally turning over the molded cavity (1) obtaining, resonant column (2), isolating frame (4) and step 7) makescover plate (3), fixture block (9) surface uniform adhere to the good metal of one deck conductivity, thereby reach the object of batch duplicating cavity (1) structure, and the method for batch duplicating cover plate (3) structure is the same, continue afterwards to carry out operational processes by step 8).

3. the manufacture method of millimeter wave cavity body filter according to claim 1 and 2, is characterized in that: the described method of evenly adhering to layer of metal Seed Layer on substrate is sputtering method.

4. the manufacture method of a millimeter wave cavity body filter, millimeter wave cavity body filter comprises cavity (1), resonant column (2) and cover plate (3), in cavity (1), be provided with isolating frame (4), the horizontal dividing wall that isolating frame (4) is fixed on perpendicular dividing wall by a perpendicular dividing wall and several square crossings forms, and side plate is fixed for an end of isolating frame (4) and cavity (1), leave coupling window (5) between all the other each ends and cavity (1) side plate; Cavity (1) inner space is divided into some cavitys by isolating frame (4), and resonant column (2) splits and is contained in each cavity; Resonant column (2) be divided into some groups and each group highly not identical; On cavity (1) side plate, offer coaxial feed and enter, export (6,7), enter, export with coaxial feed on one group of resonant column (2) corresponding to (6,7) position to be respectively connected with a coaxial feeder (8), the other end of coaxial feeder (8) enters, exports (6,7) through coaxial feed and is placed on cavity (1) outside; The position that the upper corresponding coaxial feed of cover plate (3) enters, export (6,7) is provided with the fixture block (9) that can snap in coaxial feed and enter, export (6,7), and cover plate (3) is by fixture block (9) and the tight bonding of cavity (1); It is characterized in that: this millimeter wave cavity body filter is taking plated metal as structural material, it is the even glue of multilayer on substrate, successively coordinate the some mask plates that are carved with different pattern repeatedly to aim at photoetching, development plating, successively processing, the most curing photoresist structure is peeled off and is made simultaneously; Concrete manufacture method comprises the steps:

3) layer of metal Seed Layer is evenly adhered in the position that is positioned at coaxial feeder (8) on the negative photoresist of the second layer, then continue the 3rd layer of negative photoresist of spin coating to desired height, then H mask plate (106) is placed on the 3rd layer of negative photoresist that spin coating is good, finally aims at H mask plate (106) and carry out photoetching; Wherein, pattern on H mask plate (106) is: four side plates of cavity (1) are located hollow out all the other for blocking except coaxial feed enters, exports (6,7), coaxial feeder (8) blocks, and the interior isolating frame of cavity (1) (4) and each group of resonant column (2) block, all the other hollow outs; While placing H mask plate (106), B mask plate (102) the pattern complete matching of electroplating out in negative to H mask plate (106) pattern and second layer photoresist will be placed, and pattern dimension on H mask plate (106) is identical with A mask plate (101) pattern dimension; Through developing, the pattern forming on the 3rd layer of negative photoresist is: the part partly solidified, that block of the upper hollow out of H mask plate (106) forms shrinkage pool, the height of three layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of negative photoresist, continue the 4th layer of negative photoresist of spin coating to desired height, and then B mask plate (102) is placed on the 4th layer of negative photoresist that spin coating is good, finally aim at B mask plate (102) and carry out photoetching; Place B mask plate when (102), H mask plate (106) the pattern complete matching placement that B mask plate (102) pattern and the 3rd layer of negative photoresist be powered on and plate out; Through developing, the pattern forming on the 4th layer of negative photoresist is: the part partly solidified, that block of the upper hollow out of B mask plate (102) forms shrinkage pool, the height of four layers of negative photoresist of plated metal to the in the most backward shrinkage pool;

5) on the 4th layer of negative photoresist, continue the negative photoresist of spin coating layer 5 to desired height, then C mask plate (103) is placed on the negative photoresist of layer 5 that spin coating is good, finally aim at C mask plate (103) and carry out photoetching; Wherein, pattern on C mask plate (103) is: four side plates of cavity (1) are located hollow out all the other for blocking except coaxial feed enters, exports (6,7), and the interior isolating frame of cavity (1) (4) blocks, except minimum one group of resonant column (2) hollow out, remains that resonant column (2) blocks, all the other hollow outs; While placing C mask plate (103), B mask plate (102) the pattern complete matching electroplated out in C mask plate (103) pattern and the 4th layer of negative photoresist will be placed, and pattern dimension on C mask plate (103) is identical with A mask plate (101) pattern dimension; Through developing, the pattern forming on the negative photoresist of layer 5 is: the part partly solidified, that block of the upper hollow out of C mask plate (103) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of layer 5;

6) on the negative photoresist of layer 5, continue the negative photoresist of spin coating layer 6 to desired height, then D mask plate (104) is placed on the negative photoresist of layer 6 that spin coating is good, finally aim at D mask plate (104) and carry out photoetching; Wherein, pattern on D mask plate (104) is: four side plates of cavity (1) are located hollow out all the other for blocking except coaxial feed enters, exports (6,7), and the interior isolating frame of cavity (1) (4) blocks, except minimum and second low two groups of resonant columns (2) hollow out, remains that resonant column (2) blocks, all the other hollow outs; While placing D mask plate (104), C mask plate (103) the pattern complete matching of electroplating out in negative to D mask plate (104) pattern and layer 5 photoresist will be placed, and pattern dimension on D mask plate (104) is identical with A mask plate (101) pattern dimension; Through developing, the pattern forming on the negative photoresist of layer 6 is: the part partly solidified, that block of the upper hollow out of D mask plate (104) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of layer 6;

7) when every layer of negative photoresist of spin coating afterwards carries out lithography process, method repeats rapid 6) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with D mask plate (104) pattern in step 6), difference is: the each layer of mask plate pattern one group of minimum resonant column of hollow out (2) successively using afterwards, until N mask plate (105) pattern of last one deck is: four side plates of cavity (1) are located hollow out all the other for blocking except coaxial feed enters, exports (6,7), the interior isolating frame of cavity (1) (4) blocks, all the other whole hollow outs; When each mask plate after placing and last N mask plate (105), the mask plate pattern complete matching of electroplating out in each mask plate and N mask plate (105) pattern and the negative photoresist of last layer separately will be placed, and pattern dimension on each mask plate and N mask plate (105) is identical with A mask plate (101) pattern dimension; Through developing, the pattern forming on the negative photoresist of last one deck is: the part partly solidified, that block of the upper hollow out of N mask plate (105) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of the negative photoresist of last one deck;

8) complete after above-mentioned all photoetching, plated metal, the negative photoresist in structure is fully peeled off, obtained the metal three-dimensional structure of resonant column (2) and isolating frame (4) composition of cavity (1) and inside thereof;

9) carry out the making of cover plate (3): first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, and spin coating one deck is born photoresist to desired height on metal seed layer, then cover plate mask plate (100) is placed on the negative photoresist layer that spin coating is good, finally aims at cover plate mask plate (100) and carry out photoetching; Wherein, the pattern on cover plate mask plate (100) is: two fixture blocks (9) block all the other whole hollow outs; Through developing, the pattern forming on this layer of negative photoresist is: two fixture blocks (9) part partly solidified, that block of the upper hollow out of cover plate mask plate (100) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of this layer of negative photoresist; Complete after plating, the negative photoresist in structure is fully peeled off, obtained the metal three-dimensional structure of cover plate (3) and fixture block (9) composition thereof;

5. the manufacture method of millimeter wave cavity body filter according to claim 4, is characterized in that: the described method of evenly adhering to layer of metal Seed Layer on substrate is sputtering method.

6. the manufacture method of a millimeter wave cavity body filter, millimeter wave cavity body filter comprises cavity (1), resonant column (2) and cover plate (3), in cavity (1), be provided with isolating frame (4), the horizontal dividing wall that isolating frame (4) is fixed on perpendicular dividing wall by a perpendicular dividing wall and several square crossings forms, and side plate is fixed for an end of isolating frame (4) and cavity (1), leave coupling window (5) between all the other each ends and cavity (1) side plate; Cavity (1) inner space is divided into some cavitys by isolating frame (4), and resonant column (2) splits and is contained in each cavity; Resonant column (2) be divided into some groups and each group highly not identical; On cavity (1) side plate, offer coaxial feed and enter, export (6,7), enter, export with coaxial feed on one group of resonant column (2) corresponding to (6,7) position to be respectively connected with a coaxial feeder (8), the other end of coaxial feeder (8) enters, exports (6,7) through coaxial feed and is placed on cavity (1) outside; The position that the upper corresponding coaxial feed of cover plate (3) enters, export (6,7) is provided with the fixture block (9) that can snap in coaxial feed and enter, export (6,7), and cover plate (3) is by fixture block (9) and the tight bonding of cavity (1); It is characterized in that: this millimeter wave cavity body filter is taking plated metal as structural material, it is the even glue of multilayer on substrate, successively coordinate the some mask plates that are carved with different pattern repeatedly to aim at photoetching, development plating, successively processing, the most curing photoresist structure is peeled off and is made simultaneously; Concrete manufacture method comprises the steps:

1) first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, on metal seed layer, spin coating ground floor positive photoetching rubber is to desired height, then A ' mask plate (107) is placed on the ground floor positive photoetching rubber that spin coating is good, finally aims at A ' mask plate (107) and carry out photoetching; Wherein, the pattern on A ' mask plate (107) is: four side plate hollow outs of cavity (1), and isolating frame (4) and each group of resonant column (2) hollow out in cavity, all the other block; Through developing, the pattern forming on ground floor positive photoetching rubber is: the part partly solidified, hollow out of blocking on A ' mask plate (107) forms shrinkage pool, and four side plates, isolating frame (4) and the each group of resonant column (2) that expose cavity (1) be at on-chip metal seed layer, the height to plated metal in shrinkage pool to ground floor positive photoetching rubber;

2) on ground floor positive photoetching rubber, continue spin coating second layer positive photoetching rubber to desired height, then B ' mask plate (108) is placed on the second layer positive photoetching rubber that spin coating is good, finally aim at B ' mask plate (108) and carry out photoetching; Wherein, pattern on B ' mask plate (108) is: four side plates of cavity (1) except coaxial feed enter, export (6,7) locate to block all the other for hollow out, the interior isolating frame of cavity (1) (4) and each group of resonant column (2) hollow out, all the other block; While placing B ' mask plate (108), A ' mask plate (107) pattern complete matching of electroplating out in B ' mask plate (108) pattern and ground floor positive photoetching rubber will be placed, and pattern dimension on B ' mask plate (108) is identical with A ' mask plate (107) pattern dimension; Through developing, the pattern forming on second layer positive photoetching rubber is: the part partly solidified, hollow out of blocking on B ' mask plate (108) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of second layer positive photoetching rubber;

3) on second layer positive photoetching rubber, continue the 3rd layer of positive photoetching rubber of spin coating to desired height, then C ' mask plate (109) is placed on the 3rd layer of positive photoetching rubber that spin coating is good, finally aim at C ' mask plate (109) and carry out photoetching; Wherein, pattern on C ' mask plate (109) is: four side plates of cavity (1) except coaxial feed enter, export (6,7) locate to block all the other for hollow out, isolating frame (4) hollow out in cavity, except minimum one group of resonant column (2) blocks residue resonant column (2) hollow out, all the other block; While placing C ' mask plate (109), B ' mask plate (108) pattern complete matching of electroplating out in C ' mask plate (109) pattern and second layer positive photoetching rubber will be placed, and pattern dimension on C ' mask plate (109) is identical with A ' mask plate (107) pattern dimension; Through developing, the pattern forming on the 3rd layer of positive photoetching rubber is: the part partly solidified, hollow out of blocking on C ' mask plate (109) forms shrinkage pool, the height of three layers of positive photoetching rubber of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of positive photoetching rubber, continue the 4th layer of positive photoetching rubber of spin coating to desired height, then D ' mask plate (110) is placed on the 4th layer of positive photoetching rubber that spin coating is good, finally aim at D ' mask plate (110) and carry out photoetching; Wherein, pattern on D ' mask plate (110) is: four side plates of cavity (1) except coaxial feed enter, export (6,7) locate to block all the other for hollow out, the interior isolating frame of cavity (1) (4) hollow out, except minimum and second low two groups of resonant columns (2) block residue resonant column (2) hollow out, all the other block; While placing D ' mask plate (110), C ' mask plate (109) pattern complete matching of electroplating out in D ' mask plate (110) pattern and the 3rd layer of positive photoetching rubber will be placed, and pattern dimension on D ' mask plate (110) is identical with A ' mask plate (107) pattern dimension; Through developing, the pattern forming on the 4th layer of positive photoetching rubber is: the part partly solidified, hollow out of blocking on D ' mask plate (110) forms shrinkage pool, the height of four layers of positive photoetching rubber of plated metal to the in the most backward shrinkage pool;

5) when every layer of positive photoetching rubber of spin coating afterwards carries out lithography process, method repeats rapid 4) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with D ' mask plate (110) pattern in step 4), difference is: the each layer of mask plate pattern using blocks one group of minimum resonant column (2) successively afterwards, until N ' mask plate (111) pattern of last one deck is: four side plates of cavity (1) remove coaxial feed and enter, outlet (6, 7) locate to block outer all the other be hollow out, the interior isolating frame of cavity (1) (4) hollow out, all the other all block, when each mask plate after placing and last N ' mask plate (111), the mask plate pattern complete matching of electroplating out in each mask plate and N ' mask plate (111) pattern and last layer positive photoetching rubber separately will be placed, and pattern dimension on each mask plate and N ' mask plate (111) is identical with A ' mask plate (107) pattern dimension, through developing, the pattern forming on last one deck positive photoetching rubber is: the part partly solidified, hollow out of blocking on N ' mask plate (111) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of last one deck positive photoetching rubber,

6) complete after above-mentioned all photoetching, plated metal, positive photoetching rubber curing in structure is fully peeled off, obtained the metal three-dimensional structure of resonant column (2) and isolating frame (4) composition of cavity (1) and inside thereof;

7) carry out the making of cover plate (3): first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, and on metal seed layer spin coating one deck positive photoetching rubber to desired height, then by cover plate mask plate L(112) be placed on the positive photoresist layer that spin coating is good, finally aim at cover plate mask plate L(112) carry out photoetching; Wherein, cover plate mask plate L(112) on pattern be: all the other all block two fixture blocks (9) hollow out; Through developing, the pattern forming on this layer of positive photoetching rubber is: cover plate mask plate L(112) on two fixture blocks (9) part of partly solidified, the hollow out of blocking form shrinkage pool, in the most backward shrinkage pool, plated metal is to the height of this layer of positive photoetching rubber; Complete after plating, the positive photoetching rubber in structure is fully peeled off, obtained the metal three-dimensional structure of cover plate (3) and fixture block (9) composition thereof;

7. according to the manufacture method of the millimeter wave cavity body filter described in claim 6, it is characterized in that, after step 7), also comprise the steps: the metallic cavity of peeling off in step 6) (1) structure to be placed in container, then in container, pour deployed sticky liquid PDMS into until flood cavity (1) structure completely, after PDMS is solidified into solid elastomer, cavity (1) structure being embedded in PDMS solid elastomer is taken out, in PDMS solid elastomer, just form cavity (1) structure negative norm, finally select duplicating material to build to solidify by the negative norm in PDMS solid elastomer and turn over mould, finally turning over the molded cavity (1) obtaining, resonant column (2), isolating frame (4) and step 7) makescover plate (3), fixture block (9) surface uniform adhere to the good metal of one deck conductivity, thereby reach the object of batch duplicating cavity (1) structure, and the method for batch duplicating cover plate (3) structure is the same, continue afterwards to carry out operational processes by step 8).

8. according to the manufacture method of the metric wave cavity body filter described in claim 6 or 7, it is characterized in that: the described method of evenly adhering to layer of metal Seed Layer on substrate is sputtering method.

9. the manufacture method of a millimeter wave cavity body filter, millimeter wave cavity body filter comprises cavity (1), resonant column (2) and cover plate (3), in cavity (1), be provided with isolating frame (4), the horizontal dividing wall that isolating frame (4) is fixed on perpendicular dividing wall by a perpendicular dividing wall and several square crossings forms, and side plate is fixed for an end of isolating frame (4) and cavity (1), leave coupling window (5) between all the other each ends and cavity (1) side plate; Cavity (1) inner space is divided into some cavitys by isolating frame (4), and resonant column (2) splits and is contained in each cavity; Resonant column (2) be divided into some groups and each group highly not identical; On cavity (1) side plate, offer coaxial feed and enter, export (6,7), enter, export with coaxial feed on one group of resonant column (2) corresponding to (6,7) position to be respectively connected with a coaxial feeder (8), the other end of coaxial feeder (8) enters, exports (6,7) through coaxial feed and is placed on cavity (1) outside; The position that the upper corresponding coaxial feed of cover plate (3) enters, export (6,7) is provided with the fixture block (9) that can snap in coaxial feed and enter, export (6,7), and cover plate (3) is by fixture block (9) and the tight bonding of cavity (1); It is characterized in that: this millimeter wave cavity body filter is taking plated metal as structural material, it is the even glue of multilayer on substrate, successively coordinate the some mask plates that are carved with different pattern repeatedly to aim at photoetching, development plating, successively processing, the most curing photoresist structure is peeled off and is made simultaneously; Concrete manufacture method comprises the steps:

1) first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, on metal seed layer, spin coating ground floor positive photoetching rubber is to desired height, then A ' mask plate (107) is placed on the ground floor positive photoetching rubber that spin coating is good, finally aims at A ' mask plate (107) and carry out photoetching; Wherein, the pattern on A ' mask plate (107) is: four side plate hollow outs of cavity (1), and isolating frame (4) and each group of resonant column (2) hollow out in cavity, all the other block; Through developing, the pattern forming on ground floor positive photoetching rubber is: the part partly solidified, hollow out of blocking on A ' mask plate (101) forms shrinkage pool, and four side plates, isolating frame (4) and the each group of resonant column (2) that expose cavity (1) be at on-chip metal seed layer, the height to plated metal in shrinkage pool to ground floor positive photoetching rubber;

3) layer of metal Seed Layer is evenly adhered in the position that is positioned at coaxial feeder (8) on second layer positive photoetching rubber, then continue the 3rd layer of positive photoetching rubber of spin coating to desired height, then H ' mask plate (113) is placed on the 3rd layer of positive photoetching rubber that spin coating is good, finally aims at H ' mask plate (113) and carry out photoetching; Wherein, pattern on H ' mask plate (113) is: four side plates of cavity (1) except coaxial feed enter, export (6,7) locate to block all the other for hollow out, coaxial feeder (8) hollow out, the interior isolating frame of cavity (1) (4) and each group of resonant column (2) hollow out, all the other block; While placing H ' mask plate (113), B ' mask plate (108) pattern complete matching of electroplating out in H ' mask plate (113) pattern and second layer positive photoetching rubber will be placed, and pattern dimension on H ' mask plate (113) is identical with A ' mask plate (107) pattern dimension; Through developing, the pattern forming on the 3rd layer of positive photoetching rubber is: the part partly solidified, hollow out of blocking on H ' mask plate (113) forms shrinkage pool, the height of three layers of positive photoetching rubber of plated metal to the in the most backward shrinkage pool;

4) on the 3rd layer of positive photoetching rubber, continue the 4th layer of positive photoetching rubber of spin coating to desired height, and then B ' mask plate (108) is placed on the 4th layer of positive photoetching rubber that spin coating is good, finally aim at B ' mask plate (108) and carry out photoetching; Place B ' mask plate when (108), H ' mask plate (113) pattern complete matching placement that B ' mask plate (108) pattern and the 3rd layer of positive photoetching rubber be powered on and plate out; Through developing, the pattern forming on the 4th layer of positive photoetching rubber is: the part partly solidified, hollow out of blocking on B ' mask plate (108) forms shrinkage pool, the height of four layers of positive photoetching rubber of plated metal to the in the most backward shrinkage pool;

5) on the 4th layer of positive photoetching rubber, continue spin coating layer 5 positive photoetching rubber to desired height, then C ' mask plate (109) is placed on the layer 5 positive photoetching rubber that spin coating is good, finally aim at C ' mask plate (109) and carry out photoetching; Wherein, pattern on C ' mask plate (109) is: four side plates of cavity (1) except coaxial feed enter, export (6,7) locate to block all the other for hollow out, the interior isolating frame of cavity (1) (4) hollow out, except minimum one group of resonant column (2) blocks residue resonant column (2) hollow out, all the other block; While placing C ' mask plate (109), B ' mask plate (108) pattern complete matching of electroplating out in C ' mask plate (109) pattern and the 4th layer of positive photoetching rubber will be placed, and pattern dimension on C ' mask plate (109) is identical with A ' mask plate (107) pattern dimension; Through developing, the pattern forming on layer 5 positive photoetching rubber is: the part partly solidified, hollow out of blocking on C ' mask plate (109) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of layer 5 positive photoetching rubber;

6) on layer 5 positive photoetching rubber, continue spin coating layer 6 positive photoetching rubber to desired height, then D ' mask plate (110) is placed on the layer 6 positive photoetching rubber that spin coating is good, finally aim at D ' mask plate (110) and carry out photoetching; Wherein, pattern on D ' mask plate (110) is: four side plates of cavity (1) except coaxial feed enter, export (6,7) locate to block all the other for hollow out, the interior isolating frame of cavity (1) (4) hollow out, except minimum and second low two groups of resonant columns (2) block residue resonant column (2) hollow out, all the other block; While placing D ' mask plate (110), C ' mask plate (109) pattern complete matching of electroplating out in D ' mask plate (110) pattern and layer 5 positive photoetching rubber will be placed, and pattern dimension on D ' mask plate (110) is identical with A ' mask plate (107) pattern dimension; Through developing, the pattern forming on layer 6 positive photoetching rubber is: the part partly solidified, hollow out of blocking on D ' mask plate (110) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of layer 6 positive photoetching rubber;

7) when every layer of positive photoetching rubber of spin coating afterwards carries out lithography process, method repeats rapid 6) operation, the selected mask plate pattern of each layer of gluing photoetching is substantially identical with D ' mask plate (110) pattern in step 6), difference is: the each layer of mask plate pattern using blocks one group of minimum resonant column (2) successively afterwards, until N ' mask plate (111) pattern of last one deck is: four side plates of cavity (1) remove coaxial feed and enter, outlet (6, 7) locate to block outer all the other be hollow out, the interior isolating frame of cavity (1) (4) hollow out, all the other all block, when each mask plate after placing and last N ' mask plate (111), the mask plate pattern complete matching of electroplating out in each mask plate and N ' mask plate (111) pattern and last layer positive photoetching rubber separately will be placed, and pattern dimension on each mask plate and N ' mask plate (111) is identical with A ' mask plate (107) pattern dimension, through developing, the pattern forming on last one deck positive photoetching rubber is: the part partly solidified, hollow out of blocking on N ' mask plate (111) forms shrinkage pool, and in the most backward shrinkage pool, plated metal is to the height of last one deck positive photoetching rubber,

8) complete after above-mentioned all photoetching, plated metal, the positive photoetching rubber in structure is fully peeled off, obtained the metal three-dimensional structure of resonant column (2) and isolating frame (4) composition of cavity (1) and inside thereof;

9) carry out the making of cover plate (3): first get substrate, on substrate, evenly adhere to layer of metal Seed Layer, and on metal seed layer spin coating one deck positive photoetching rubber to desired height, then by cover plate mask plate L(112) be placed on the positive photoresist layer that spin coating is good, finally aim at cover plate mask plate L(112) carry out photoetching; Wherein, cover plate mask plate L(112) on pattern be: all the other all block two fixture blocks (9) hollow out; Through developing, the pattern forming on this layer of positive photoetching rubber is: cover plate mask plate L(112) on two fixture blocks (9) part of partly solidified, the hollow out of blocking form shrinkage pool, in the most backward shrinkage pool, plated metal is to the height of this layer of positive photoetching rubber; Complete after plating, the positive photoetching rubber in structure is fully peeled off, obtained the metal three-dimensional structure of cover plate (3) and fixture block (9) composition thereof;

10) by the cavity of metal three-dimensional structure (1) and cover plate (3) bonding packaging, obtained complete millimeter wave cavity body filter.

10. the manufacture method of millimeter wave cavity body filter according to claim 9, is characterized in that: the described method of evenly adhering to layer of metal Seed Layer on substrate is sputtering method.