CN102995089A - Oxidation capsule forming method - Google Patents

Oxidation capsule forming method Download PDF

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Publication number
CN102995089A
CN102995089A CN2012103454793A CN201210345479A CN102995089A CN 102995089 A CN102995089 A CN 102995089A CN 2012103454793 A CN2012103454793 A CN 2012103454793A CN 201210345479 A CN201210345479 A CN 201210345479A CN 102995089 A CN102995089 A CN 102995089A
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Prior art keywords
oxide film
mentioned
treated
electrolytic solution
micro
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CN2012103454793A
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CN102995089B (en
Inventor
石榑文昭
稻吉荣
石川裕一
佐藤洋志
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Ulvac Techno Ltd
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Ulvac Techno Ltd
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/04Anodisation of aluminium or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/04Anodisation of aluminium or alloys based thereon
    • C25D11/12Anodising more than once, e.g. in different baths

Abstract

The invention relates to an oxidation capsule forming method, wherein an oxidation capsule is effectively formed on the large-area surface of an object to be processed. One part of the object to be processed and made of aluminum or aluminum alloy is soaked in the electrolyte for micro-arc oxidation treatment, so as to form an oxidation capsule. Then the boundary of the part of the object formed with the oxidation capsule and the other part of the object is again soaked in the electrolyte for micro-arc oxidation treatment. Therefore, the other part of the object is formed with the oxidation capsule.

Description

The formation method of oxide film thereon
Technical field
The present invention relates to form on the object being treated surface that is consisted of by aluminum or aluminum alloy the method for oxide film thereon.
Background technology
The applicant had proposed large-area object being treated surface is cut apart in the past, and a minute several carries out micro-arc oxidation to be processed, and thus, forms oxide film thereon (with reference to patent documentation 1) on the whole surface of object being treated.
Disclosed method in the document, utilize masking material that the position of processing first of object being treated and the position of aftertreatment are separated, the position of processing first is immersed in the electrolytic solution until the position of masking material, form oxide film thereon, object being treated is mentioned from electrolytic solution, remove masking material, the position of aftertreatment is immersed in once again carries out oxidation in the electrolytic solution, by this operation is carried out repeatedly, at 1m 2Form oxide film thereon on the whole surface of the object being treated of above size.
But, in patent documentation 1 disclosed method, from electrolytic solution, mention object being treated owing to have, remove the operation of masking material, therefore there is inefficient problem.In addition because masking material can not evenly adhere on the object being treated surface, exist electrolytic solution enter masking material below, the problem that the border at the position of processing first and the position of aftertreatment becomes inhomogeneous.In addition, when the removal of masking material is not thorough, exist impurity to remain in the problem of boundary vicinity.Further, exist the area of object being treated larger, produce the larger problem of possibility of these problems.
Therefore, for example, patent documentation 2 proposes, Yi Bian transport the flexible substrate of drawing from coiled material, Yi Bian do not make slosh ground carry out deciding current electroanalysis processing etc.But, in the document, film quality to the oxide film thereon on the position of carrying out electrolysis treatment and the border between the untreated position is not mentioned especially, in addition, for being the crooked aluminum or aluminum alloy that is difficult to more than the thickness 1mm, and the problem points of the above-mentioned citing document 1 of the occasion that maximizes as the area of processing object does not propose any solution yet.
In addition, though proposed to adopt little arc process in the citing document 3, the limit keeps the electric current of same level, and there be the problem same with citing document 2 in the method for limit film forming on flexible base plate.
The prior art document
Patent documentation
Patent documentation 1 JP 2009-102721 communique
Patent documentation 2 JP 2007-332409 communiques
Patent documentation 3 JP 2010-156040 communiques
Summary of the invention
Invent problem to be solved
Therefore, the present invention is in order to address the above problem, effectively to form oxide film thereon as purpose on large-area object being treated surface.
Be used for solving the means of problem
In order to solve above-mentioned problem, what the inventor concentrated one's attention on to study found that, with as do not adopt masking material, divide several to carry out anodic oxidation treatment to large-scale object being treated, then the so in the past understanding of object being treated corrosion is basis when testing near liquid level, is surprised to find that near liquid level the corrosion of the object being treated that electrolytic solution produces and near the hardly staining metal the liquid level, but also can solve weakness when adopting masking material, thereby finished following invention.
Namely, the present invention is as described in first, it is characterized in that, part by the object being treated more than the thickness 1mm that aluminum or aluminum alloy is consisted of is immersed in carries out micro-arc oxidation and processes in the electrolytic solution, after forming oxide film thereon thus, on the border at the position that has formed above-mentioned oxide film thereon and other positions masking material is not set, the position that has formed above-mentioned oxide film thereon is immersed in other positions carries out the micro-arc oxidation processing in the above-mentioned electrolytic solution, thus, form oxide film thereon at above-mentioned other positions.
Second of the present invention, it is characterized in that, in the formation method of first described oxide film thereon, form successively above-mentioned oxide film thereon from the front of above-mentioned object being treated.
The 3rd of the present invention, it is characterized in that in the formation method of first or second described oxide film thereon, the current density when above-mentioned micro-arc oxidation is processed is 1~6A/dm 2
The 4th of the present invention, it is characterized in that in the formation method of each described oxide film thereon of first~the 3rd, the current density when above-mentioned micro-arc oxidation is processed is 1~4A/dm 2
The 5th of the present invention, it is characterized in that in the formation method of each described oxide film thereon of first~the 4th, in the forming process of whole above-mentioned oxide film thereon, the temperature of above-mentioned electrolytic solution is-10 ℃~65 ℃ scope.
The invention effect
According to the present invention, to the big area object being treated, can not make the distortion such as object being treated bends and effectively form oxide film thereon.In addition, owing to do not exist masking material to remove incomplete problem, inclusion-free is residual on the object being treated.In addition, according to the present invention, the electric current when processing owing to micro-arc oxidation can be lower, therefore do not need large capacity power source.Further, owing to the heating in the forming process that can reduce energetically whole oxide film thereon, be used for compared with the past can the reducing of system of cooling process system.
Description of drawings
Fig. 1 is the explanatory view of an embodiment of the formation method of expression oxide film thereon of the present invention.
The sample photo of Fig. 2 (a) embodiment 1, (b) the sample photo of embodiment 2.
Fig. 3 is the optical microscope photograph (oxide film thereon of (a) the 1st oxide film thereon, (b) the 2nd oxide film thereon, (c) boundary vicinity) of the sample of embodiment 1.
Fig. 4 is the optical microscope photograph (oxide film thereon of (a) the 1st oxide film thereon, (b) the 2nd oxide film thereon, (c) boundary vicinity) of the sample of embodiment 2.
The explanation of symbol
1 object being treated
2 electrolytic solution
3 the 1st oxide film thereon
4 the 2nd oxide film thereon
Embodiment
The formation method of oxide film thereon of the present invention, as shown in Figure 1, the part of the object being treated 1 more than the thickness 1mm is immersed in carries out micro-arc oxidation in the electrolytic solution 2 and process, form the 1st oxide film thereon 3, other positions (residue position) that will be different from the position that has formed the 1st oxide film thereon 3 are immersed in the electrolytic solution 2, form the 2nd oxide film thereon 4, in the on the whole formation oxide film thereon 3,4 of object being treated 1.When the 2nd oxide film thereon 4 forms, because the 1st oxide film thereon 3 becomes insulating film, so only form oxide film thereon in the concentrated area, position that forms the 2nd oxide film thereon 4.
According to the present invention, owing to unlike the disclosed like that position that becomes the border between the 1st and the 2nd oxide film thereon 3,4 of patent documentation 1 masking material is set, so can be effectively in object being treated 1 formation oxide film thereon 3,4.In addition, owing on the border masking material is not set, therefore, does not exist electrolytic solution 2 to enter the downside of masking material and form inhomogeneous oxide film thereon, or produce the problem of the impurity such as white particulate material.
Also have, the so-called masking material in this specification sheets means to comprise the masking material of disclosed such silicone encapsulant or silicon sealant etc. in the patent documentation 1, is used for separating the position that has formed oxide film thereon and the parts that form later on the position of oxide film thereon.
In above-mentioned example, object being treated 1 formed on the whole oxide film thereon 3,4, but the present invention may not be defined in the on the whole formation oxide film thereon at object being treated 1.
In addition, form operation about oxide film thereon, select to get final product according to shape or the size of object being treated 1, when being divided into oxide film thereon more than 3 times on object being treated 1, then the masking material number becomes more than 2, is preferred therefore.
Also have, as from electrolytic solution 2, mentioning and form the 2nd oxide film thereon 4 in the position that will not form the 1st oxide film thereon 3, can be more effectively in the on the whole formation oxide film thereon of object being treated 1.
In above-mentioned example, in forming the process of the 1st oxide film thereon 3, carry out micro-arc oxidation with the current density of regulation and process, make voltage keep certain after reaching the voltage of regulation.The judgement that finishes about the formation of the 1st oxide film thereon 3, though reaching certain after-current density at voltage slowly reduces, but preferably with respect to voltage certain begin to process the time current density, reach the formation that finishes the 1st oxide film thereon 3 in 1/100~1/10 in current density and process, the formation that begins the 2nd oxide film thereon 4 is processed.
Current density when processing about micro-arc oxidation, preferred 1~6.0A/dm 2, more preferably 1~4A/dm 2When less than 1A/dm 2The time, discharge becomes insufficient, when greater than 6.0A/dm 2The time, the boundary film quality between the 1st and the 2nd oxide film thereon 3,4 becomes inhomogeneous.
In addition, in whole oxide film thereon 3,4 forming process, preferably make the temperature of electrolytic solution 2 be-10~65 ℃.This is because can not use large-scale cooling apparatus, but the small-sized cooling apparatuss such as use water cooler form stable oxide film thereon.
Also have, in the present invention, object being treated 1 is not limited to tabular, comprises the object being treated of three-dimensional shape.This be because, although be the object being treated of three-dimensional shape, also can partly form oxide film thereon, make that object being treated moves, rotation etc., form oxide film thereon at the position that has formed oxide film thereon and other positions.In addition, because at position that will be adjacent with the position that has formed first oxide film thereon during as other positions, can make that object being treated is mobile in a certain direction to be processed continuously, thereby be preferred.
In addition, " flat-shaped part " in this specification sheets comprises being formed with through hole or the irregular parts of surface formation.
As the object being treated 1 that uses among the present invention, so long as the above aluminum or aluminum alloy of the thickness 1mm that is difficult to be out of shape gets final product, for example, as aluminium alloy, can adopt fine aluminium system (JIS alloy model: 1N30,1050,1070,1080,1085), Al-Mn is (JIS alloy model: 3005,3104), Al-Mg is (JIS alloy model: 5652,5052,5454), Al-Mg-Si is (JIS alloy model: 6061,6063), Al-Cu is (JIS alloy model: 2011,2014,2017,2024), Al-Zn-Mg system (JIS alloy model: 7075 etc.) etc.
Electrolytic solution as using in the micro-arc oxidation processing of the present invention can adopt the known electrolytic solution that uses in this processing.For example, can be with a kind or the mixture use soluble in water in them in Sodium phosphate dibasic, tripoly phosphate sodium STPP, SODIUM PHOSPHATE, MONOBASIC, super sodium polyphosphate (sodiumultrapolyphosphate), water glass, potassium hydroxide, diphosphate sodium, tertiary sodium phosphate, sodium aluminate, Starso and the sodium hydroxide etc.
The oxide film thereon that forms for example, also can comprise with aluminum oxide as principal constituent, in addition, also contains the material such as aluminum compounds such as aluminium hydroxides.The thickness of this oxide film thereon for example is below the above 30 μ m of 5 μ m, and preferred 5 μ m scope above and that 20 μ m are following gets final product.
In addition, according to the oxide film thereon of the present invention's formation, owing to have fine and close structure, and for example, when employing contains the aluminium alloy of Si, even Si becomes crystalline state, by the effect of this Si, but the still increase of the crystal defect of this oxide film thereon of establishment.Thus, the discharging amount that becomes the gas of impurity is suppressed to seldom.Therefore, aluminum or aluminum alloy of the present invention is suitable for as the surface treatment of the vacuum unit that uses under the high vacuum with parts.
Embodiment
Below, embodiments of the invention and comparative example compared be illustrated.
In embodiment 1 and the comparative example 1, as object being treated, use aluminium alloy (A5052) is cut the sample that becomes the size of 40 * 80 * 2mm and obtain.
In addition, as the electrolytic solution that micro-arc oxidation is processed, use is dissolved in potassium hydroxide, Starso and tertiary sodium phosphate respectively pure water makes it reach the alkaline electrolyte of 3g/L.
Above-mentioned electrolytic solution is put into the carbon system of being provided with to the electrolyzer of electrode, decide electric current with direct current and carry out the micro-arc oxidation processing.
(embodiment 1)
The 40mm of the front end of the length direction of sample is immersed in the electrolytic solution, take until the 450V current density as 6.0A/dm 2After forming the 1st oxide film thereon, carry out deciding voltage with 450V and process, until current density reaches 0.28A/dm 2, then, the sample mass-impregnation in electrolytic solution, is similarly formed the 2nd oxide film thereon with leading section.In the whole operation that forms oxide film thereon, the temperature of electrolytic solution is below 65 ℃.In addition, form since the 1st oxide film thereon and form the used time of end to the 2nd oxide film thereon and be: the 1st oxide film thereon formation time is 1.5 hours, and the 2nd oxide film thereon formation time is 1.5 hours, adds up to 3 hours.
(embodiment 2)
To the method for embodiment 1, be 3.6A/dm except making current density 2In addition, under condition similarly to Example 1, carry out.Also have, the current density during deciding the voltage processing and finish after the 1st oxide film thereon forms is 0.25A/dm 2In the whole operation that forms oxide film thereon, the temperature of electrolytic solution is below 45 ℃.In addition, form the used time of end similarly to Example 1 since the 1st oxide film thereon formation to the 2nd oxide film thereon, add up to 3 hours.
(comparative example 1)
At the front end 40mm place of the length direction of distance sample, shelter with silicone encapsulant, with the 1st oxide film thereon and the 2nd oxide film thereon separately.After the 1st oxide film thereon forms, mention object being treated from electrolytic solution, peel masking material after, form the 2nd oxide film thereon.Take until the 450V current density as 6.0A/dm 2, electrolyte temperature is to process below 65 ℃.In addition, form since the 1st oxide film thereon and to form the used time of end to the 2nd oxide film thereon and be: the oxide film thereon formation time is that 1.5 hours, time of drying of masking material are that 24 hours, overburden operation time of masking material are 1 hour, add up to 26.5 hours, this is necessary for the 1st and the 2nd oxide film thereon, so add up to 53 hours.
Embodiment 1 and 2 any one, adopting the border of the oxide film thereon that different operations form all is uniform border.
Like that, embodiment 1 compares with embodiment 2 as can be known shown in the photo of the sample after the processing of the embodiment 1 among Fig. 2 and 2, and the width on border is wide, and the color distinction of the 1st and the 2nd oxide film thereon is large, forms the striated apperance.
In addition, like that, embodiment 1 compares with embodiment 2 as can be known shown in the optical microscope photograph of the embodiment 2 among embodiment 1, Fig. 4 among Fig. 3, and many at the boundary black splotch of the 1st and the 2nd oxide film thereon, configuration of surface is coarse.
In addition, when peeling off masking material, owing to can not peel off simply, used the plastics scraper that is used for the peel seal agent in the comparative example 1.Although be plastics, as peel off with scraper in order to peel off neatly, when then peeling off to the sample injury.
In addition, as can be known the necessary time of the formation of the oxide film thereon of comparative example 1, compare with embodiment 1 or embodiment 2, differ nearly 20 times, efficient is poor.

Claims (5)

1. the formation method of an oxide film thereon, it is characterized in that, the part by the object being treated more than the thickness 1mm that aluminum or aluminum alloy is consisted of be immersed in carry out in the electrolytic solution micro-arc oxidation process form oxide film thereon after, boundary at the position that has formed above-mentioned oxide film thereon and other positions does not arrange masking material, be immersed in and carry out micro-arc oxidation in the above-mentioned electrolytic solution and process having formed the position of above-mentioned oxide film thereon and other positions, thus, form oxide film thereon at above-mentioned other positions.
2. the formation method of oxide film thereon claimed in claim 1 is characterized in that, forms successively above-mentioned oxide film thereon from the front of above-mentioned object being treated.
3. the formation method of claim 1 or 2 described oxide film thereon is characterized in that, the current density when above-mentioned micro-arc oxidation is processed is 1~6A/dm 2
4. the formation method of each described oxide film thereon of claim 1~3 is characterized in that, the current density when above-mentioned micro-arc oxidation is processed is 1~4A/dm 2
5. the formation method of each described oxide film thereon of claim 1~4 is characterized in that, in the forming process of whole above-mentioned oxide film thereon, the temperature of above-mentioned electrolytic solution is-10 ℃~65 ℃ scope.
CN201210345479.3A 2011-09-12 2012-09-12 Oxidation capsule forming method Active CN102995089B (en)

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Cited By (2)

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CN106929897A (en) * 2015-12-30 2017-07-07 比亚迪股份有限公司 A kind of Al-alloy casing and preparation method thereof
CN112514047A (en) * 2018-07-30 2021-03-16 日本爱发科泰克能株式会社 Substrate lifting device and substrate transportation method

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KR101709602B1 (en) * 2015-12-10 2017-02-23 영남대학교 산학협력단 Method of Aluminium Coating Layer with Anti-oxidation Using Micro arc Electrolytic Oxidation
JP6558649B2 (en) * 2017-08-23 2019-08-14 株式会社アルバック Surface treatment method and surface treatment apparatus
JP7218201B2 (en) * 2019-02-13 2023-02-06 アルバックテクノ株式会社 Method for regenerating oxide film on aluminum parts
CN113913892A (en) * 2021-10-29 2022-01-11 西安庄信新材料科技有限公司 Micro-arc oxidation device with variable cathode area and surface treatment method

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Publication number Priority date Publication date Assignee Title
CN106929897A (en) * 2015-12-30 2017-07-07 比亚迪股份有限公司 A kind of Al-alloy casing and preparation method thereof
CN112514047A (en) * 2018-07-30 2021-03-16 日本爱发科泰克能株式会社 Substrate lifting device and substrate transportation method
CN112514047B (en) * 2018-07-30 2024-05-03 日本爱发科泰克能株式会社 Substrate lifting device and substrate transportation method

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CN102995089B (en) 2017-05-03
KR101610994B1 (en) 2016-04-08
KR20130028856A (en) 2013-03-20
JP2013060613A (en) 2013-04-04

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