CN102983154B - Image transmission/reception device of the micro-display of a kind of integrated transparent OLED and preparation method thereof - Google Patents
Image transmission/reception device of the micro-display of a kind of integrated transparent OLED and preparation method thereof Download PDFInfo
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- CN102983154B CN102983154B CN201210435638.9A CN201210435638A CN102983154B CN 102983154 B CN102983154 B CN 102983154B CN 201210435638 A CN201210435638 A CN 201210435638A CN 102983154 B CN102983154 B CN 102983154B
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Abstract
The image transmission/reception device of the micro-display of a kind of integrated transparent OLED, comprise the transparent OLED for luminescence on photosensitive photodiode and described substrate on substrate, described substrate, the spectrum of described OLED luminescent spectrum and described photodiode sensitive does not overlap, also comprise shading layer, described shading layer is arranged, for only transmitting the light of the wave band responded to by described photodiode preset for described photodiode.The manufacture method of the image transmission/reception device of the micro-display of a kind of integrated transparent OLED is also provided at this.By arranging shading layer, transmitting image and ambient light are avoided affecting image-receptive by the barrier effect of shading layer.
Description
Technical field
The present invention relates to OLED Display Technique, particularly relate to image transmission/reception device of the micro-display of a kind of integrated transparent OLED and preparation method thereof.
Background technology
Organic luminescent device (OLED) has that luminosity is high, driving voltage is low, fast response time, without angle limitations, low-power consumption, ultralight ultra-thin, any shape can be possessed, color exports as advantages such as monochromatic, white or near infrared ray, life-span length, has huge application prospect in the field such as flat-panel monitor, planar light source.In conjunction with silicon base CMOS drive circuit, can the function such as integrated signal acquisition, signal transacting, control.
With reference to the example shown in Fig. 1, photodiode is embedded in the image transmission/reception device in the micro-array of display of OLED.Wherein, silicon based opto-electronics diode 7 pairs of near infrared light sensitivities, photodiode array forms near-infrared image transducer further.OLED is made up of light reflection anode 8, organic luminous layer 5 and transparent cathode 9, and OLED array forms image display device.The spectrum of the distribution of OLED luminescent spectrum and photodiode sensitive does not overlap.Image display device launches visible images by OLED, and imageing sensor detects near-infrared image by photodiode.Intersect separate at photodiode side design OLED light emitting source, and luminous and photosensitive can parallel work-flow.If OLED launches near infrared light, and photodiode is responsive to visible ray, and situation is similar.
OLED image transceiver device shown in Fig. 1 is compared to the micro-display of traditional OLED, and maximum advantage is: integrative display and imaging function on same CMOS chip; External electro-optical device reduces, and HMD size reduces; System is lighter, cheap, with better function, performance is higher and power consumption is lower; Miniscope can be applied to, as HMD head-mounted display, running gear or micro-projection arrangement, HUD HUD, EVF etc.; Possess and penetrate display and the two-way micro-display of shooting with video-corder shadow, as interactive HMD, optical check etc.; Sensor, as optical sensor, as fluorescent, color, flow measurement etc.
But, in image transmission/reception device as shown in Figure 1, the visible ray that illuminating source 20 sends, a part becomes outer output light 10, another portion returns to silicon substrate direction by the reflection of device inside, scattering, wherein part light 12 is detected by photodiode, and silicon based opto-electronics diode pair visible ray is also responsive, therefore can have influence on the infrared property of photodiode.In addition, external environment visible ray 11 also can affect the performance of infrared photodiode, thus causes infrared image performance degradation.On the other hand, on Integrated design, OLED light emitting source is placed on photodiode side, must intersect each other and separate.Because if overlap each other, OLED will shelter from photodiode, affect photodiode photosensitive; And adjacent one another arely to separate, the limited flexibility of design, and the resolution causing improving OLED display and the resolution that improves imageing sensor contradict.
If OLED launches infrared light, then the photaesthesia of photodiode only to visible light wave range, situation is similar to the above.
Summary of the invention
Main purpose of the present invention is exactly for the deficiencies in the prior art, provides image transmission/reception device of the micro-display of a kind of integrated transparent OLED and preparation method thereof, the performance of optimized image sensor image sensing.
For achieving the above object, the present invention is by the following technical solutions:
The image transmission/reception device of the micro-display of a kind of integrated transparent OLED, comprise the transparent OLED for luminescence on photosensitive photodiode and described substrate on substrate, described substrate, the spectrum of described OLED luminescent spectrum and described photodiode sensitive does not overlap, also comprise shading layer, described shading layer is arranged, for only transmitting the light of the wave band responded to by described photodiode preset for described photodiode.
Described OLED is for launching visible ray, and described photodiode is for responding to the infrared light of near infrared band, or described OLED is for launching near infrared light, and described photodiode is for responding to the light of visible light wave range.
Described OLED is placed on described photodiode side, intersected with each otherly separates, and the relatively described OLED of described photodiode is closer to described substrate, and described shading layer is located between described photodiode and described OLED.
Described shading layer is formed on the substrate, or is formed on the interlayer insulating film be located between described substrate and described OLED.
Described OLED is formed on internallic insulating layers, and described shading layer is located between described OLED and described internallic insulating layers.
Described shading layer is the combination of light absorbing zone or filter coating or light absorbing zone and filter coating, and described filter coating is long wave/short-pass interference light filtering film or bandpass-type interference light filtering film, and described shading layer is photoetching formation film or vacuum coating or polymer material film.
Described bandpass-type interference filter layer is multilayer dielectric film, and described multilayer dielectric film has the periodic structure be alternately made up of high refractive index layer and low-index layer.
The manufacture method of the image transmission/reception device of the micro-display of a kind of integrated transparent OLED, be included in step substrate being formed photodiode and transparent OLED, also be included in the step forming shading layer on described photodiode, described shading layer only transmits the light of the wave band responded to by described photodiode preset.
The step forming photodiode, transparent OLED and shading layer comprises:
P-Si substrate is formed n trap;
Photodiode is formed at n trap;
Photodiode and substrate form interlayer insulating film;
Formed to insert in interlayer insulating film and fasten, interlayer insulating film forms metal interconnecting wires, n trap is connected to metal interconnecting wires by contact and slotting fastening;
Internallic insulating layers is formed on interlayer insulating film and metal interconnecting wires;
The metal interconnecting wires anode of described OLED is formed on described internallic insulating layers; With
After completing CMOS standard manufacture technique, internallic insulating layers forms shading layer.
Described internallic insulating layers is through chemico-mechanical polishing or adopt planarizing material.
The technique effect that the present invention is useful:
According to the present invention, owing to being provided with shading layer, if OLED launches visible ray and infrared light responded to by photodiode, then photodiode only receives the infrared light of near infrared band through shading layer, if OLED launches infrared light and visible ray responded to by photodiode, then photodiode only receives the visible ray of visible light wave range through shading layer.For the first situation, OLED launches visible ray after device inside reflection or scattering, the light of directive photodiode is absorbed by shading layer or reflects, can not be detected by photodiode, and the visible ray in external environmental light is absorbed by shading layer or reflects, can not be detected by photodiode, the infrared light inciding device is not then stopped, can be detected by photodiode, for the second situation, OLED launches infrared light after device inside reflection or scattering, the light of directive photodiode is absorbed by shading layer or reflects, can not be detected by photodiode, and the infrared light in external environmental light is absorbed by shading layer or reflects, can not be detected by photodiode, the visible ray inciding device is not then stopped, can be detected by photodiode.By the barrier effect of shading layer, make image transmission/reception device reception image avoid the adverse effect being subject to launching image and external environmental light, improve image detection accuracy and reliability, optimized image detection performance.
Accompanying drawing explanation
Fig. 1 is the generalized section of existing OLED micro-display image transmission/reception device;
Fig. 2 is the generalized section of the image transmission/reception device of the integrated OLED of the embodiment of the present invention;
Fig. 3 is the transmittance curve figure of the photoresist layer in the embodiment of the present invention;
Fig. 4 is the transmittance curve figure of another photoresist layer in the embodiment of the present invention;
Fig. 5 is the transmittance curve figure of the photoresist layer in the embodiment of the present invention.
Embodiment
By reference to the accompanying drawings the present invention is described in further detail by the following examples.
As shown in Figure 2, the image transmission/reception device of the micro-display of a kind of integrated OLED, this device comprises silicon substrate, the transparent OLED on the photodiode on silicon substrate and silicon substrate.In one embodiment, OLED launches visible ray, and photodiode is for responding to the infrared light of near infrared band, and namely this device launches visible images, accepts near-infrared image.Be provided with shading layer for photodiode in image transmission/reception device, launch image and avoid producing disadvantageous visible illumination effect to photodiode by the barrier effect of shading layer in image transmission/reception device with reception image.Shading layer 20 can have infrared light transmittance to be greater than 90%, to end the characteristic of visible ray, and visible light transmissivity is less than 0.1%.
Wherein the OLED of another embodiment launches infrared light, then the photaesthesia of photodiode only to visible light wave range, and this device launches near infrared light image, accepts visible images.Launch image to avoid influencing each other with the same barrier effect by shading layer of reception image.Shading layer can have visible light transmissivity to be greater than 90%, to end the characteristic of near infrared light, and infrared light transmittance is less than 0.1%.
Shading layer can be light absorbing zone, also can be filter coating, also can be the combination of both.Shading layer can adopt the mode of photoetching to be shaped.
Shading layer 20 can be produced on substrate 1 as shown in Figure 2, also can be produced on interlayer insulating film 6.But preferably, shading layer, after completing CMOS standard manufacture technique, is produced on the internallic insulating layers in image transmission/reception device, this mode and standard CMOS process compatibility.Internallic insulating layers can carry out chemico-mechanical polishing or adopt planarizing material (as organic material) to carry out smooth process, with the performance of the latter made OLED guaranteed and shading layer.OLED anode fastens by slotting on internallic insulating layers and shading layer the drain electrode being connected to field effect transistor.
Fig. 2 is the generalized section of the image transmission/reception device of the integrated OLED of an embodiment, and OLED wherein launches visible ray, makes photodiode only respond to the infrared light of near infrared band by the barrier effect of shading layer.In specific embodiment, structure and the manufacture method thereof of this image transmission/reception device are as follows.
On p-Si substrate 1, first form n trap 5, p-Si substrate 1 form photodiode with n trap 5.Continue to form interlayer insulating film 6, formed to insert in interlayer insulating film and fasten 3, n trap 5 and contact 2 and be connected, and fasten 3 be connected to metal interconnecting wires 4 by inserting, metal interconnecting wires 4 is formed on interlayer insulating film.Internallic insulating layers 7 is formed in above interlayer insulating film 6 and metal interconnecting wires 4, and interconnection line 8 is formed on internallic insulating layers 7, and interconnection line 8 fastens by inserting the drain electrode (not marking in figure) being connected to field effect transistor.Interconnection line 8 is as the anode of OLED.
OLED comprises interconnection line 8, organic layer 9, transparent cathode 10.Interconnection line 8 is wherein transparency conducting layers, the material of interconnection line 8 can be thin metal film as silver, gold, chromium, aluminium, copper, molybdenum, tantalum, tungsten etc. or all kinds of alloys that formed by these materials, also can be nesa coating as ITO, IZO etc., also can be the composite bed of thin metal layer and nesa coating.
Each organic layer 9 order is formed on interconnection line 8, and forms transparency conducting layer 10 on organic layer 9.Transparency conducting layer can be the nesa coating as ITO, IZO, also can be the transparency conducting layer formed by thin metal film.Transparent cathode 10 forms transparent thin-film encapsulation layer 11, to protect OLED below.
OLED in the present embodiment sends visible ray, and wavelength is between 380-780nm.
Shading layer 20 preferably makes after completing CMOS standard manufacture technique, is positioned on internallic insulating layers 7, and interconnection line 8 fastens by slotting on internallic insulating layers 7 and shading layer 20 drain electrode (not marking in figure) being connected to field effect transistor.
Shading layer 20 can be long-pass interference light filtering film, and this interference light filtering film has the infrared characteristic passed through.Light source corresponding is in the application infrarede emitting diode and infrared laser mainly, so main wavelength has 808nm, 850nm, 905nm, 940nm etc.As adopted the infrared emission of 905nm, shading layer 20 has light transmission rate curve as shown in Figure 3, and when wavelength is greater than 900nm, transmitance is greater than 90%, and when wavelength is less than 800nm, transmitance is less than 0.1%.
Shading layer 20 also can be bandpass-type spike interference filter, and it is that a kind of bandwidth is narrower, the light of specific band can be allowed to pass through and allow all the other S-bands end or reflection optics.This shading layer is preferably multilayer dielectric film, has the periodic structure be alternately made up of high refractive index layer and low-index layer.Light source corresponding is in the application infrarede emitting diode and infrared laser, and main wavelength has as above stated 808nm, 850nm, 905nm, 940nm etc.As adopted the infrared emission of 805nm, shading layer 20 has transmittance curve as shown in Figure 4, and when wavelength is between 800-900nm, transmitance is greater than 90%, and all the other wave-length coverage transmitances are less than 0.1%.
Interference light filtering film can be prepared by vacuum coating, can adopt high transparency and little extinction coefficient and the larger single or multiple lift film system of refractive index.
Shading layer 20 also can adopt macromolecular material film forming to be formed, typically, infrared through filter coating by PC, PMMA material system, and it effectively can end visible ray and transmitted infrared light, and the wave band transmitance such as between 800nm-1500nm is greater than 90%.
See Fig. 2, after adding voltage at the anode of OLED and negative electrode two ends, light sends from organic layer 9, a part becomes outer output light 21, another part forms the luminous ray 23 of directive photodiode after device inside reflection or scattering, and light 23 is absorbed by shading layer 20 or reflects, and can not be detected by photodiode, some direct oppositely directive shading layer 20 is absorbed or is reflected into light 25, can not be detected by photodiode.The visible ray 22 of external environment is absorbed by shading layer 20 or reflects, and can not be detected by photodiode.Incident infrared light 24 is not stopped, can be detected by photodiode.
In further embodiments, have same structure with previous embodiment, difference is, OLED wherein launches near infrared light, and photodiode is for responding to visible ray.Still with reference to figure 2, by the barrier effect of shading layer 20, photodiode can be made only to respond to the visible ray of 380-780nm wave band.
Shading layer 20 can be short-pass interference light filtering film, and this interference light filtering film has the characteristic that visible ray passes through.Typical shading layer 20 has transmittance curve as shown in Figure 5, and the transmitance of wavelength between 780-1100nm is less than 0.1%, and the transmitance of wavelength between 380-780nm is greater than 90%.
Interference light filtering film also can be prepared by vacuum coating, can adopt high transparency and little extinction coefficient and the larger single or multiple lift film system of refractive index.
Shading layer also can adopt macromolecular material film forming to be formed, and typically, the visible light-transmissive filter coating be made up of PC, PMMA material, it effectively can end infrared light and visible light transmissive, and the wave band transmitance such as between 780nm-1100nm is less than 0.1%.
See Fig. 2, after adding voltage at the anode of OLED and negative electrode two ends, infrared light sends from organic layer 9, a part becomes outer output light 21, another part forms the Infrared 23 of directive photodiode after device inside reflection or scattering, and Infrared 23 is absorbed by shading layer 20 or reflects, and can not be detected by photodiode, some direct oppositely directive shading layer 20 is absorbed or is reflected into light 25, can not be detected by photodiode.Infrared light 22 in external environmental light is absorbed by shading layer 20 or reflects, and can not be detected by photodiode.Incident visible ray 24 is not stopped, can be detected by photodiode.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, all should be considered as belonging to protection scope of the present invention.
Claims (5)
1. the manufacture method of the image transmission/reception device of the micro-display of an integrated transparent OLED, be included in step substrate being formed photodiode and transparent OLED, it is characterized in that, also be included in the step forming shading layer on described photodiode, described shading layer only transmits the light of the wave band responded to by described photodiode preset, described OLED is placed on described photodiode side, intersected with each otherly to separate, make the relatively described OLED of described photodiode closer to described substrate, described shading layer is located between described photodiode and described OLED;
The step forming described photodiode, described OLED and described shading layer comprises:
P-Si substrate is formed n trap;
Described photodiode is formed at described n trap;
Described photodiode and described substrate form interlayer insulating film;
Formed to insert in described interlayer insulating film and fasten, described interlayer insulating film forms metal interconnecting wires, described n trap is connected to described metal interconnecting wires by contact and described slotting fastening;
Internallic insulating layers is formed on described interlayer insulating film and described metal interconnecting wires;
The metal interconnecting wires anode of described OLED is formed on described internallic insulating layers; With
After completing CMOS standard manufacture technique, described internallic insulating layers forms described shading layer.
2. the manufacture method of the image transmission/reception device of the micro-display of integrated transparent OLED as claimed in claim 1, is characterized in that, described internallic insulating layers is through chemico-mechanical polishing or adopt planarizing material.
3. the manufacture method of the image transmission/reception device of the micro-display of integrated transparent OLED as claimed in claim 1, it is characterized in that, described OLED is for launching visible ray, described photodiode is for responding to the infrared light of near infrared band, or, described OLED is for launching near infrared light, and described photodiode is for responding to the light of visible light wave range.
4. the manufacture method of the image transmission/reception device of the micro-display of integrated transparent OLED as claimed in claim 1, it is characterized in that, described shading layer is the combination of light absorbing zone or filter coating or light absorbing zone and filter coating, described filter coating is long wave/short-pass interference light filtering film or bandpass-type interference light filtering film, and described shading layer is photoetching formation film or vacuum coating or polymer material film.
5. the manufacture method of the image transmission/reception device of the micro-display of integrated transparent OLED as claimed in claim 4, it is characterized in that, described bandpass-type interference filter layer is multilayer dielectric film, and described multilayer dielectric film has the periodic structure be alternately made up of high refractive index layer and low-index layer.
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| CN105304682B (en) * | 2015-10-20 | 2019-05-28 | 深圳典邦科技有限公司 | A kind of silicon substrate OLED image transceiver device and preparation method thereof |
| CN108666342B (en) * | 2017-03-31 | 2021-02-09 | 京东方科技集团股份有限公司 | Display panel, manufacturing method and display device |
| US10249771B2 (en) * | 2017-07-27 | 2019-04-02 | Visera Technologies Company Limited | Filter collimators and methods for forming the same |
| CN112151520B (en) * | 2019-06-26 | 2022-12-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Photoelectric transceiving chip with monolithic integration structure, manufacturing method and application thereof |
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