CN102981965A - NAND FLASH file system - Google Patents

NAND FLASH file system Download PDF

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Publication number
CN102981965A
CN102981965A CN2012104402902A CN201210440290A CN102981965A CN 102981965 A CN102981965 A CN 102981965A CN 2012104402902 A CN2012104402902 A CN 2012104402902A CN 201210440290 A CN201210440290 A CN 201210440290A CN 102981965 A CN102981965 A CN 102981965A
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China
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data
flash
area
block
district
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CN2012104402902A
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Chinese (zh)
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宗竞
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JIANGSU LEMAIDAO NETWORK TECHNOLOGY Co Ltd
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JIANGSU LEMAIDAO NETWORK TECHNOLOGY Co Ltd
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Priority to CN2012104402902A priority Critical patent/CN102981965A/en
Publication of CN102981965A publication Critical patent/CN102981965A/en
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Abstract

The invention discloses a NAND FLASH file system which comprises a system information area, a state identification area, a file information area, a parameter setting area and a data storage area. The system information area is used for saving system information of a node and information about a storage device. The state identification area is used for identifying good states and bad states of all FLASH blocks, and therefore, in a data storing process, good-bad state identification bits of the blocks can be read from the state identification area at first, a valid block is found, then data is stored, and therefore the data can be prevented from being stored in an invalid block. The file information area is created in a valid block starting from the first block of the first sheet of Flash, and every time when file information is stored, a sheet is used as a unit. The parameter setting area is used for setting acquisition parameters, and mainly used for acquiring the number of channels, sampling frequency, sampling lengths and the like. The data storage area starts from the sixteenth block to the last block of relevant modules and is used for storing testing data. By means of the NAND FLASH file system, enlargement of storage capacity and improvement of storage speed are achieved.

Description

A kind of NAND FLASH file system
Technical field
The present invention relates to the Computer Storage field, relate in particular to a kind of NAND FLASH file system.
Background technology
At present, memory capacity is increasing in the domestic and international memory technology, storage speed is more and more faster, flash memory technology is more and more outstanding, the solid-state memory development is more and more faster.Growing along with solid-state memory, the FLASH storer with its have non-volatile, cost is low, density is large, power consumption is little, online overprogram and the characteristics such as wipe, be widely applied.Compare with traditional disk storage device, the variation that FLASH more can bearing temperature, vibrations and the impact of machinery, reliability is higher, is easy to realize high-speed, low-power consumption and miniaturization, increasingly becomes the main flow of storer.
But monolithic flash memory NAND FLASH capacity relative is little, storage speed is relatively low and have the at random problem such as invalid block.
Summary of the invention
Based on the problems referred to above, the present invention proposes a kind of structure of storage array, can realize on the one hand the expansion of memory capacity, can realize on the other hand the raising of storage speed.
Specifically, the present invention proposes a kind of NAND FLASH file system, it is characterized in that described file system comprises: system information district, status indicator district, fileinfo district, parameter setting area, data storage area, wherein:
Described system information district is used for preserving the system information of node, the information of memory device;
Described status indicator district be used for the fine or not state of all pieces of FLASH all sign out in data storage procedure, can read first the fine or not status indicator position of piece from the tag slot like this, find active block to carry out again the data storage, prevent that data from writing in the invalid block;
The fileinfo district is created in the active block of the 1st BOB(beginning of block) of first Flash, and each storing documents information is take one page as unit;
Described parameter setting area is used for acquisition parameter is set, and mainly is acquisition channel number, sample frequency, sampling length etc.;
Described data storage area is that the 16th BOB(beginning of block) of correlation module arrives last piece, is used for storage testing experiment data.
Further, the base unit of data storage is the bulk physical areas of the same address of four Flash storeies.
Further, when Flash is carried out write operation, can both store in the active block in order to guarantee data, after current bulk storage is finished, find next active block address according to the status indicator district.
Further, when data file is carried out read-write operation in to Flash, the existence of invalid block in the Flash data field is so that the corresponding table between the logical address that system must set up data storages in the fileinfo district and its physical address makes things convenient for the access of system's data memory area.
Description of drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, obviously, accompanying drawing in the following describes only is part embodiment of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 shows systematic parameter marked area parametric distribution table;
Fig. 2 shows the constructive process in fileinfo district.
Embodiment
Describe specific embodiments of the invention in detail below in conjunction with accompanying drawing.
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Usually, the 0th of NAND FLASH storage space the must be active block.Therefore can be chosen in the 0th sets up corresponding system information district and status indicator district, also will rationally set up fileinfo district and parameter setting area simultaneously.The system level information of in store this node memory device in system information district is such as information such as node device numbering, FLASH memory block quantity, memory capacity, address data memory scopes; Each data message that gathers storage preserved in record in the fileinfo district, mainly contains the first address of times of collection, acquisition channel number, sample frequency, sampling length, data and tail address etc.; Parameter setting area essential record is preserved the various parameters that next time require to gather storage, such as acquisition channel number, sample frequency, sampling length etc.; The fine or not state of each piece of in store correlation module of status indicator district essential record.Wherein system information district and status indicator district are set among the 0th of first FLASH of correlation module, and wherein system information is kept in the 0th page, and status indicator information is kept at the 1st page.The fileinfo district is set in first active block of the 1st BOB(beginning of block) of this sheet FLASH, gathers canned data take page or leaf as unit record at every turn, and the 1-15 piece is as backup address, and the data storage area is from the 16th BOB(beginning of block).The parameter setting area is set among the 0th of lower a slice FLASH, and same every subparameter setting is take page or leaf as unit.The file system of FLASH data organizational structure consists of the following components: system information district, status indicator district, fileinfo district, parameter setting area, data storage area.
The data of storing in the individual node memory test system all are the data that this node collects at special time, ad-hoc location, this comprising the location, the time the instant data message such as system, environment, explosion wave.The data that in follow-up data analysis is processed, need to obtain each node system, so must preserve the system information of this node, the information of memory device etc. in the memory device of individual node test macro.System information district parametric distribution as shown in Figure 1.
The FLASH memory inside has the bad piece of some, but the 0th must be active block, so can set up in certain zone of the 0th the status indicator district of correlation module all identifies the fine or not state of all pieces of FLASH out, like this in data storage procedure, can read first the fine or not status indicator position of piece from the tag slot, find active block to carry out again data storages, prevent that data from writing in the invalid block, improved the reliability of system.
The fileinfo district is created in the active block of the 1st BOB(beginning of block) of first Flash, and each storing documents information is take one page as unit.Before data acquisition command triggered, system can read from the parameter setting area this parameter that gathers storage, mainly contains filename, times of collection, acquisition channel number, sample frequency, sampling length etc.Create simultaneously some information that this gathers storage, comprise filename and various parameters etc., be stored in the fileinfo district.Simultaneously, meeting replenishes in this fileinfo and fills in first address and the tail address information that deposit data is stored in this collection after finishing the collection storage.The flow process that creates fileinfo is illustrated in fig. 2 shown below.
Needing system is arranged acquisition parameter before gathering storage, mainly is acquisition channel number, sample frequency, sampling length etc.New parameter is set at every turn is stored in take page or leaf as unit among the 0th of second FLASH, when the parameter number of times that arranges surpasses 64 times, when namely this part storage resources has been finished, system will wipe the 0th and reset new parameter.Parameters mainly utilizes host computer to send parameter by usb circuit to processor, and processor is again with the parameter region of these Parameter storages to FLASH.
The 16th BOB(beginning of block) of correlation module is the data storage area to last piece entirely, is used for storage testing experiment data.The base unit of data storage is the bulk physical areas of the same address of four Flash storeies.When Flash is carried out write operation, can both store in the active block in order to guarantee data, after current bulk storage is finished, find next active block address according to the status indicator district.When data file was carried out read-write operation in to Flash, the existence of invalid block in the Flash data field was so that the corresponding table between the logical address that system must set up data storages in the fileinfo district and its physical address makes things convenient for the access of system's data memory area.
Need to prove that above embodiment only is the exemplary description to technical solution of the present invention, and is not limitation of the present invention; Although with reference to top embodiment the present invention is had been described in detail; but; those of ordinary skill in the art should be understood that fully; do not breaking away from the protection domain that limited by claims of the present invention under the prerequisite of spirit; can make amendment or part technical characterictic wherein is equal to replacement the technical scheme that above-described embodiment is put down in writing, these all should belong to protection scope of the present invention.

Claims (4)

1. NAND FLASH file system is characterized in that this system comprises: system information district, status indicator district, fileinfo district, parameter setting area, data storage area, wherein:
Described system information district is used for preserving the system information of node, the information of memory device;
Described status indicator district be used for the fine or not state of all pieces of FLASH all sign out in data storage procedure, can read first the fine or not status indicator position of piece from the tag slot like this, find active block to carry out again the data storage, prevent that data from writing in the invalid block;
The fileinfo district is created in the active block of the 1st BOB(beginning of block) of first Flash, and each storing documents information is take one page as unit;
Described parameter setting area is used for acquisition parameter is set, and mainly is acquisition channel number, sample frequency, sampling length etc.;
Described data storage area is that the 16th BOB(beginning of block) of correlation module arrives last piece, is used for storage testing experiment data.
2. file system according to claim 1, wherein, the base unit of data storage is the bulk physical areas of the same address of four Flash storeies.
3. file system according to claim 2 wherein, when Flash is carried out write operation, can both store in the active block in order to guarantee data, after current bulk storage is finished, find next active block address according to the status indicator district.
4. file system according to claim 3, wherein, when data file is carried out read-write operation in to Flash, the existence of invalid block in the Flash data field, so that the corresponding table between the logical address that system must set up data storages in the fileinfo district and its physical address makes things convenient for the access of system's data memory area.
CN2012104402902A 2012-11-07 2012-11-07 NAND FLASH file system Pending CN102981965A (en)

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
CN103577574A (en) * 2013-11-05 2014-02-12 中船重工(武汉)凌久电子有限责任公司 High-reliability linear file system based on nand flash
CN106775454A (en) * 2016-11-21 2017-05-31 建荣半导体(深圳)有限公司 A kind of method and its device for managing bad column address
CN107908572A (en) * 2017-11-21 2018-04-13 四川巧夺天工信息安全智能设备有限公司 A kind of method of restructuring NAND Flash chip data
CN108255433A (en) * 2018-01-12 2018-07-06 纳思达股份有限公司 The file management method and device of flash storage, flash storage

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103577574A (en) * 2013-11-05 2014-02-12 中船重工(武汉)凌久电子有限责任公司 High-reliability linear file system based on nand flash
CN103577574B (en) * 2013-11-05 2017-02-08 中船重工(武汉)凌久电子有限责任公司 High-reliability linear file system based on nand flash
CN106775454A (en) * 2016-11-21 2017-05-31 建荣半导体(深圳)有限公司 A kind of method and its device for managing bad column address
CN106775454B (en) * 2016-11-21 2019-07-19 建荣半导体(深圳)有限公司 A kind of method and device thereof managing bad column address
CN107908572A (en) * 2017-11-21 2018-04-13 四川巧夺天工信息安全智能设备有限公司 A kind of method of restructuring NAND Flash chip data
CN107908572B (en) * 2017-11-21 2021-08-27 四川巧夺天工信息安全智能设备有限公司 Method for recombining NAND-Flash chip data
CN108255433A (en) * 2018-01-12 2018-07-06 纳思达股份有限公司 The file management method and device of flash storage, flash storage
CN108255433B (en) * 2018-01-12 2021-12-07 珠海极海半导体有限公司 Flash memory, file management method and device of Flash memory
CN114035749A (en) * 2018-01-12 2022-02-11 珠海极海半导体有限公司 Electronic equipment and Flash memory
CN114089916A (en) * 2018-01-12 2022-02-25 珠海极海半导体有限公司 Data acquisition system and temperature and humidity sensor system
CN114089916B (en) * 2018-01-12 2022-12-20 珠海极海半导体有限公司 Data acquisition system and temperature and humidity sensor system
CN114035749B (en) * 2018-01-12 2023-02-28 珠海极海半导体有限公司 Electronic equipment and Flash memory

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Application publication date: 20130320