CN102976332B - Method and equipment for directional solidification and purification of polycrystalline silicon through taking tailing by quartz tube - Google Patents
Method and equipment for directional solidification and purification of polycrystalline silicon through taking tailing by quartz tube Download PDFInfo
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- CN102976332B CN102976332B CN201210536975.7A CN201210536975A CN102976332B CN 102976332 B CN102976332 B CN 102976332B CN 201210536975 A CN201210536975 A CN 201210536975A CN 102976332 B CN102976332 B CN 102976332B
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Abstract
The invention belongs to the technical field of metallurgy purification, and particularly relates to a method and equipment for directional solidification and purification of polycrystalline silicon through taking tailing by a quartz tube. According to the method, under inert gas environment, silicon is melt and then is cooled to pull ingot; when solidification is completed by 85-90%, the quartz tube is stretched into the surplus melt silicon, vacuumizing is stopped, inert gas is led in, the surplus melt silicon enters the quartz tube under the action of pressure difference, ingot pulling is continuously carried out, after the upper end of a crucible leaves a heating area, a tailing collection box is stretched below the quartz tube with a point; the power is cut off so as to stop heating, melt silicon in the quartz tube expands, then the quartz tube cracks and falls into the tailing collection box, and cast ingot of high purity in the crucible is obtained. Due to the method, back-diffusion of impurity is prevented, technology processes are reduced, and the yield of cast ingot is improved. The equipment is convenient to improve and install, is simple to operate, can effectively remove impurities accumulated at the tail of the cast ingot, save production period and cost, and is applicable to industrial production.
Description
Technical field
The invention belongs to metallurgy purification technical field, particularly a kind of method and apparatus of tailing taking-out type directional solidification purified polysilicon.
Background technology
The purification of silicon raw material is the important step of photovoltaic industrial chain, and the fast development of photovoltaic industry depends on high-level efficiency, method of purification cheaply.Directional solidification technique has been widely used in the numerous areas of purification of metals, has obtained significant effect.In the process that silicon raw material is purified, segregation coefficient can, to enrichment in liquid phase, finally be removed in directional freeze process much smaller than 1 metallic impurity.This method is that current metallurgy method is prepared one of key link of solar-grade polysilicon, is the effective means of removing metallic impurity in polysilicon.The principle of directional freeze is to adopt compulsory means in melt, to form the thermograde of specific direction, the position that in silicon melt, temperature is lower becomes first crystallization nucleation of forming core source, become the starting point of melt solidifying and start growth, due to the existence of unidirectional thermograde, melt is constantly grown along the direction contrary with hot-fluid, the final column crystal with specific orientation that forms.It is to utilize the different solubility of impurity element in melt and solid that directional freeze is purified, the impurity element that segregation coefficient is less in process of setting is discharged from and enters in liquid phase in forward position, solid-liquid interface place, and constantly enrichment in melt, finally solidify at the afterbody of ingot casting, by region excision higher ingot casting afterbody impurity concentration, can obtain the ingot casting of low-metal content, and then reach the object of purification.
But, solidifying latter stage, along with the continuous enrichment of impurity and constantly reducing of melt volume, the concentration of impurity can be more and more higher, and the impurity of high density is retained in the region of final set.In slow cooling process subsequently, the impurity of area with high mercury can spread to low concentration region, make silicon purity along with the prolongation of soaking time reduces on the contrary gradually, this has affected refining effect, and in this case, need cut afterbody waste material up to 25%～35%, yield rate is only 65-75%.Simultaneously, because the hardness ratio of silicon is larger, need high-power cutting facility the silicon ingot of purification and the high ingot casting tailing of afterbody foreign matter content could be separated, the general method that uses line cutting and the cutting of diamond saw band is cut at present, but cutting facility cost is high, saw band consumption is large, is unfavorable for the reduction of industrial production cost, at present, domestic rarely seen fruitful method facilitates the removal of tailing.
Summary of the invention
The present invention seeks to as overcoming above deficiency, propose a kind of silica tube and got the method for tailing formula directional solidification purified polysilicon, solidifying latter stage, sharp mouth silica tube is stretched among melt, in vacuum chamber, pass into argon gas afterwards, the silicon melt that the not solidified foreign matter content in upper strata is high enters in silica tube under the effect of pressure difference, realize impurity enriched district and separate with the direct of HIGH-PURITY SILICON ingot casting solidifying solidifying ending phase, suppress the back diffusion of impurity, the purity of polysilicon and the yield of ingot casting are improved, reduce process procedure, the equipment that the method adopts has also been proposed in addition, this equipment is simple, easy and simple to handle, cost is lower, and being beneficial to the tailing that foreign matter content is high is removed quickly and easily.
The technical scheme that adopted is for achieving the above object: a kind of silica tube is got the method for tailing formula directional solidification purified polysilicon, it is characterized in that: in protection of inert gas environment, clean silicon material is heated to melt completely formation silicon melt, insulation; Lower the temperature afterwards, draw ingot vertically downward, carry out directional freeze; In the time having solidified 85～90%, stop drawing ingot, silica tube is stretched in the not solidified excess silicon melt in upper strata, in vacuum chamber, pass into rare gas element, the not solidified excess silicon melt in upper strata is entered in silica tube under pressure difference effect, and until upper strata, not solidified excess silicon melt is all pressed into after silica tube, continues to pull down ingot, leave behind heating zone until crucible upper end, tailing collection box is extended under silica tube; Cut off the electricity supply, stop heating, the silicon melt setting expansion in silica tube, falls in tailing collection box with tailing after silica tube spalling, solidifies the ingot casting obtaining and be HIGH-PURITY SILICON ingot casting in crucible.
The concrete steps of the method that adopts are as follows:
The first step pre-treatment: add the clean silicon material of crucible volume 90～95% in crucible, close vent line, open vacuum pump group, first the vacuum tightness in vacuum chamber is extracted into 0.01-10Pa, close afterwards vacuum pump group, open vent line, in vacuum chamber, be filled with rare gas element, reach 100～4000Pa to pressure, close vent line;
Second step melting, solidify: power-on, utilize ruhmkorff coil and graphite heater that the silicon material in crucible is heated to 1450～1650 DEG C to being fused into silicon melt completely, and be incubated 30～60min at this temperature, pull vertically downward aqueous cold plate, make silicon melt in the crucible speed uniform motion vertically downward with 0.1-2mm/min, draw ingot, silicon melt is carried out directional freeze to top by crucible bottom, in the time that silicon melt is solidified to 85～90%, stop drawing ingot, silica tube is extend in the not solidified excess silicon melt in upper strata, open vent line, rare gas element at the uniform velocity reaches 6000～50000Pa to being filled to pressure in vacuum chamber with the flow of 0.1～3L/min, the not solidified excess silicon melt in upper strata is pushed down in silica tube in the poor effect of silica tube external and internal pressure, until melt enters in silica tube completely, continue to pull down ingot with the speed of 0.1-2mm/min, leave behind heating zone until crucible upper end, tailing collection box level is extended under silica tube, silica tube lower end is down to apart from tailing collection box 5～15cm,
The 3rd step aftertreatment: cut off the electricity supply, stop heating, silicon melt cooled and solidified in silica tube also expands, to after silica tube spalling, fall in tailing collection box, the tailing that is rich in impurity has just been collected among tailing collection box, in crucible, solidifying the ingot casting obtaining is HIGH-PURITY SILICON ingot casting, and its purity will reach 99.99%-99.999%, and yield rate reaches 85-95%.
Described silicon material is industrial silicon, and its purity is 99.5%～99.9%.
Described rare gas element is argon gas or helium, and its purity is more than 99.9%.
A kind of silica tube is got the equipment that the method for tailing formula directional solidification purified polysilicon adopts, form outer wall by vacuum chamber, vacuum-lines is installed on outer wall, vacuum-lines one end is connected with vacuum pump group, it is characterized in that: on outer wall, be installed with vent line, and be movably installed with tailing collection box, aqueous cold plate is movably installed in chamber bottom, graphite cake is placed in aqueous cold plate top, on graphite cake, have hole, graphite pillar one end is connected by hole and graphite cake are nested, the other end is connected with graphite pallet is nested, crucible is placed on graphite pallet, graphite heater is placed on crucible periphery and is fixed on vacuum chamber sidewall, carbon felt insulated tank is placed on outside graphite heater and is fixed on vacuum chamber sidewall, on carbon felt insulation cover, have hole, be placed in carbon felt insulated tank top, ruhmkorff coil is placed on outside carbon felt insulated tank, and be fixed on vacuum chamber sidewall, silica tube is movably installed in vacuum chamber top, and its lower end is placed in central position directly over crucible through carbon felt insulation cover, silica tube upper end closed, lower ending opening.
At least 3, hole on described graphite cake.
On described graphite pallet, have draw-in groove.
Between described silica tube and vacuum chamber, vacuum-sealing is flexibly connected.
Described silica tube is sharp mouth silica tube, and its lower end mouth of pipe is sharp mouth taper, and upper end is cylindrical, and entirety is the funnel shaped of upper end closed.
The unusual effect of the inventive method is: when melt solidifying is to impurity phase during to concentrated silicon ingot top, utilize pressure difference that tailing high foreign matter content is collected in silica tube, tailing solidifies rear spalling silica tube to be collected among falling to tailing collection box, reduce the back diffusion of impurity, the yield that has improved ingot casting, yield reaches 85%-95%, has reduced the consumption of line cutting and the cutting of diamond saw band, reduce process procedure, reduced energy consumption.
Equipment of the present invention is on the basis of original apparatus for directional solidification, to increase breather line, silica tube and tailing collection box, scrap build is easy for installation, simple to operate, can effectively remove the impurity of ingot casting afterbody enrichment, save production cycle and cost, be applicable to large-scale industrialization and produce.
Brief description of the drawings
A kind of silica tube of Fig. 1 is got the equipment schematic diagram that the method for tailing formula directional solidification purified polysilicon adopts
In figure: (1) silica tube, (2) vacuum chamber, (3) carbon felt insulation cover, (4) carbon felt insulated tank, (5) ruhmkorff coil, (6) graphite heater, (7) crucible, (8) melt, (9) graphite pallet, (10) graphite pillar, (11) graphite cake, (12) aqueous cold plate, (13) vent line, (14) tailing collection box, (15) vacuum pump group, (16) vacuum-lines.
Embodiment
Describe the present invention in detail below in conjunction with specific embodiments and the drawings, but the present invention is not limited to specific embodiment.
Embodiment 1
A kind of silica tube is as shown in Figure 1 got the equipment that the method for tailing formula directional solidification purified polysilicon adopts, and forms outer wall by vacuum chamber 2, and vacuum-lines 16 is installed on outer wall, and vacuum-lines 16 one end are connected with vacuum pump group 15.
On outer wall, be installed with vent line 13, and be movably installed with tailing collection box 14, aqueous cold plate 12 is movably installed in vacuum chamber 2 bottoms, graphite cake 11 is placed in aqueous cold plate top, on graphite cake 11, have hole, graphite pillar 10 one end are connected with graphite cake 11 is nested by hole, the other end is connected with graphite pallet 9 is nested, crucible 7 is placed on graphite pallet 9, graphite heater 6 is placed on crucible periphery and is fixed on vacuum chamber 2 sidewalls, carbon felt insulated tank 4 is placed on outside graphite heater 6 and is fixed on vacuum chamber 2 sidewalls, on carbon felt insulation cover 3, have hole, be placed in carbon felt insulated tank 4 tops, ruhmkorff coil 5 is placed on outside carbon felt insulated tank 4, and be fixed on vacuum chamber 2 sidewalls, silica tube 1 is movably installed in vacuum chamber 2 tops, and its lower end is placed in central position directly over crucible through carbon felt insulation cover 3, silica tube upper end closed, lower ending opening.
On graphite cake 11, there are 4 holes, on graphite pallet 9, have draw-in groove, be beneficial to graphite pillar and be connected with the nested of its.
Between silica tube 1 and vacuum chamber 2, vacuum-sealing is flexibly connected, and silica tube can move up and down and keep the effect of sealing.
Silica tube 1 is sharp mouth silica tube, and its lower end mouth of pipe is sharp mouth taper, and upper end is cylindrical, and entirety is the funnel shaped of upper end closed.
Embodiment 2
Equipment described in employing embodiment 1 is got tailing and is carried out directional solidification purified polysilicon, first be 99.5% silicon material to adding the clean purity of crucible volume 90% in crucible 7, close vent line 13, open vacuum pump group 15, the vacuum tightness in vacuum chamber 2 is extracted into 10Pa, close vacuum pump group 15, open vent line, in vacuum chamber 2, be filled with 99.92% argon gas, reach 100Pa to pressure, close vent line;
Second step melting, solidify: power-on, utilize ruhmkorff coil 5 and graphite heater 6 that the silicon material in crucible 7 is heated to 1450 DEG C to being fused into silicon melt completely, and be incubated 30min at this temperature, pull vertically downward aqueous cold plate 12, make silicon melt in the crucible 7 speed uniform motion vertically downward with 2mm/min, draw ingot, silicon melt carries out directional freeze by crucible 7 bottoms to top, in the time that silicon melt is solidified to 85%, stop drawing ingot, silica tube 1 is extend in the not solidified excess silicon melt in upper strata, open vent line 13, purity is that 99.92% argon gas is at the uniform velocity filled to 6000Pa with the flow of 0.1L/min in vacuum chamber 2, not solidified upper strata excess silicon melt is pushed down in silica tube 1 in the effect of silica tube external and internal pressure, until melt enters among silica tube 1 completely, continue to pull down ingot with the speed of 2mm/min, leave behind heating zone until crucible 7 upper ends, tailing collection box 14 levels are stretched under silica tube, silica tube 1 lower end is down to apart from tailing collection box 10cm place,
The 3rd step aftertreatment: cut off the electricity supply, stop heating, silicon melt cooled and solidified in silica tube 1 also expands, to after silica tube spalling, fall in tailing collection box 14, the tailing that is rich in impurity has just been collected among tailing collection box, in crucible, solidifying the ingot casting obtaining is HIGH-PURITY SILICON ingot casting, and its purity will reach 99.99%, and yield rate reaches 85%.
Embodiment 3
Equipment described in employing embodiment 1 is got tailing and is carried out directional solidification purified polysilicon, first be 99.7% silicon material to adding the clean purity of crucible volume 93% in crucible 7, close vent line 13, open vacuum pump group 15, the vacuum tightness in vacuum chamber 2 is extracted into 2Pa, close vacuum pump group 15, open vent line, be 99.94% argon gas to being filled with purity in vacuum chamber 2, reach 2000Pa to pressure, close vent line;
Second step melting, solidify: power-on, utilize ruhmkorff coil 5 and graphite heater 6 that the silicon material in crucible 7 is heated to 1550 DEG C to being fused into silicon melt completely, and be incubated 45min at this temperature, pull vertically downward aqueous cold plate 12, make silicon melt in the crucible 7 speed uniform motion vertically downward with 0.8mm/min, draw ingot, silicon melt carries out directional freeze by crucible 7 bottoms to top, in the time that silicon melt is solidified to 87%, stop drawing ingot, silica tube 1 is extend in the not solidified excess silicon melt in upper strata, open vent line 13, purity is that 99.94% argon gas is at the uniform velocity filled to 25000Pa with the flow of 1.5L/min in vacuum chamber 2, not solidified upper strata excess silicon melt is pushed down in silica tube 1 in the effect of silica tube external and internal pressure, until melt enters among silica tube 1 completely, continue to pull down ingot with the speed of 0.8mm/min, leave behind heating zone until crucible 7 upper ends, tailing collection box 14 levels are stretched under sharp mouth silica tube, silica tube 1 lower end is down to apart from tailing collection box 15cm place,
The 3rd step aftertreatment: cut off the electricity supply, stop heating, silicon melt cooled and solidified in silica tube 1 also expands, to after silica tube spalling, fall in tailing collection box 14, the tailing that is rich in impurity has just been collected among tailing collection box, in crucible, solidifying the ingot casting obtaining is HIGH-PURITY SILICON ingot casting, and its purity will reach 99.994%, and yield rate reaches 90%.
Embodiment 4
Equipment described in employing embodiment 1 is got tailing and is carried out directional solidification purified polysilicon, first be 99.9% silicon material to adding the clean purity of crucible volume 95% in crucible 7, close vent line 13, open vacuum pump group 15, the vacuum tightness in vacuum chamber 2 is extracted into 0.01Pa, close vacuum pump group 15, open vent line, be 99.93% helium to being filled with purity in vacuum chamber 2, reach 4000Pa to pressure, close vent line;
Second step melting, solidify: power-on, utilize ruhmkorff coil 5 and graphite heater 6 that the silicon material in crucible 7 is heated to 1650 DEG C to being fused into silicon melt completely, and be incubated 60min at this temperature, pull vertically downward aqueous cold plate 12, make silicon melt in the crucible 7 speed uniform motion vertically downward with 0.1mm/min, draw ingot, silicon melt carries out directional freeze by crucible 7 bottoms to top, in the time that silicon melt is solidified to 90%, stop drawing ingot, silica tube 1 is extend in the not solidified excess silicon melt in upper strata, open vent line 13, purity is 99.93% helium with the flow of 3L/min at the uniform velocity to the interior filling of vacuum chamber 2 50000Pa, not solidified upper strata excess silicon melt is pushed down in silica tube 1 in the effect of silica tube external and internal pressure, until melt enters among silica tube 1 completely, continue to pull down ingot with the speed of 0.1mm/min, leave behind heating zone until crucible 7 upper ends, tailing collection box 14 levels are stretched under silica tube, silica tube 1 lower end is down to apart from tailing collection box 5cm place,
The 3rd step aftertreatment: cut off the electricity supply, stop heating, silicon melt cooled and solidified in silica tube 1 also expands, to after silica tube spalling, fall in tailing collection box 14, the tailing that is rich in impurity has just been collected among tailing collection box, in crucible, solidifying the ingot casting obtaining is HIGH-PURITY SILICON ingot casting, and its purity will reach 99.999%, and yield rate reaches 95%.
Claims (9)
1. silica tube is got a method for tailing formula directional solidification purified polysilicon, it is characterized in that: in protection of inert gas environment, clean silicon material is heated to melt completely form after silicon melt is incubated; Lower the temperature afterwards, draw ingot vertically downward, carry out directional freeze; In the time having solidified 85～90%, stop drawing ingot, silica tube is stretched in the not solidified excess silicon melt in upper strata, in vacuum chamber, pass into rare gas element, the not solidified excess silicon melt in upper strata is entered in silica tube under pressure difference effect, and until upper strata, not solidified excess silicon melt is all pressed into after silica tube, continues to pull down ingot, leave behind heating zone until crucible upper end, tailing collection box is extended under silica tube; Cut off the electricity supply, stop heating, the silicon melt setting expansion in silica tube, falls in tailing collection box with tailing after silica tube spalling, solidifies the ingot casting obtaining and be HIGH-PURITY SILICON ingot casting in crucible.
2. the method that a kind of silica tube according to claim 1 is got tailing formula directional solidification purified polysilicon, is characterized in that: the concrete steps of the method that adopts are as follows:
The first step pre-treatment: add the clean silicon material of crucible volume 90～95% in crucible (7), close vent line (13), open vacuum pump group (15), first the vacuum tightness in vacuum chamber (2) is extracted into 0.01-10Pa, close afterwards vacuum pump group, open vent line (13), in vacuum chamber (2), be filled with rare gas element, reach 100～4000Pa to pressure, close vent line (13);
Second step melting, solidify: power-on, utilize ruhmkorff coil (5) and graphite heater (6) that the silicon material in crucible (7) is heated to 1450～1650 DEG C to being fused into silicon melt completely, and be incubated 30～60min at this temperature, pull vertically downward aqueous cold plate (12), make silicon melt in crucible (7) the speed uniform motion vertically downward with 0.1-2mm/min, draw ingot, silicon melt carries out directional freeze by crucible (7) bottom to top, in the time that silicon melt is solidified to 85～90%, stop drawing ingot, silica tube (1) is extend in the not solidified excess silicon melt in upper strata, open vent line (13), rare gas element at the uniform velocity reaches 6000～50000Pa to being filled to pressure in vacuum chamber (2) with the flow of 0.1～3L/min, the not solidified excess silicon melt in upper strata is pushed down in silica tube (1) in the poor effect of silica tube external and internal pressure, until melt enters in silica tube (1) completely, continue to pull down ingot with the speed of 0.1-2mm/min, leave behind heating zone until crucible (7) upper end, tailing collection box (14) level is extended under silica tube, silica tube (1) lower end is down to apart from tailing collection box 5～15cm,
The 3rd step aftertreatment: cut off the electricity supply, stop heating, silicon melt cooled and solidified in silica tube (1) also expands, to after silica tube spalling, fall in tailing collection box (14), the tailing that is rich in impurity has just been collected among tailing collection box, in crucible, solidifying the ingot casting obtaining is HIGH-PURITY SILICON ingot casting, and its purity will reach 99.99%-99.999%, and yield rate reaches 85-95%.
3. the method for getting tailing formula directional solidification purified polysilicon according to the arbitrary described a kind of silica tube of claim 1 or 2, is characterized in that: described silicon material is industrial silicon, its purity is 99.5%～99.9%.
4. the method for getting tailing formula directional solidification purified polysilicon according to the arbitrary described a kind of silica tube of claim 1 or 2, is characterized in that: described rare gas element is argon gas or helium, its purity is more than 99.9%.
5. a kind of silica tube according to claim 1 is got the equipment that the method for tailing formula directional solidification purified polysilicon adopts, form outer wall by vacuum chamber (2), vacuum-lines (16) is installed on outer wall, vacuum-lines (16) one end is connected with vacuum pump group (15), it is characterized in that: on outer wall, be installed with vent line (13), and be movably installed with tailing collection box (14), aqueous cold plate (12) is movably installed in vacuum chamber (2) bottom, graphite cake (11) is placed in aqueous cold plate top, graphite cake has hole on (11), graphite pillar (10) one end is by hole and nested connection of graphite cake (11), the other end and nested connection of graphite pallet (9), crucible (7) is placed on graphite pallet (9), graphite heater (6) is placed on crucible periphery and is fixed on vacuum chamber (2) sidewall, carbon felt insulated tank (4) is placed on outside graphite heater (6) and is fixed on vacuum chamber (2) sidewall, on carbon felt insulation cover (3), have hole, be placed in carbon felt insulated tank (4) top, ruhmkorff coil (5) is placed on outside carbon felt insulated tank (4), and be fixed on vacuum chamber (2) sidewall, silica tube (1) is movably installed in vacuum chamber (2) top, and its lower end is placed in central position directly over crucible through carbon felt insulation cover (3), silica tube upper end closed, lower ending opening.
6. a kind of silica tube according to claim 5 is got the equipment that the method for tailing formula directional solidification purified polysilicon adopts, and it is characterized in that: at least 3, the hole on described graphite cake (11).
7. a kind of silica tube according to claim 5 is got the equipment that the method for tailing formula directional solidification purified polysilicon adopts, and it is characterized in that: on described graphite pallet (9), have draw-in groove.
8. a kind of silica tube according to claim 5 is got the equipment that the method for tailing formula directional solidification purified polysilicon adopts, and it is characterized in that: between described silica tube (1) and vacuum chamber (2), vacuum-sealing is flexibly connected.
9. the equipment that the method for getting tailing formula directional solidification purified polysilicon according to the arbitrary described a kind of silica tube of claim 5 or 8 adopts, it is characterized in that: described silica tube (1) is sharp mouth silica tube, its lower end mouth of pipe is sharp mouth taper, upper end is cylindrical, and entirety is the funnel shaped of upper end closed.
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| CN201210536975.7A CN102976332B (en) | 2012-12-13 | 2012-12-13 | Method and equipment for directional solidification and purification of polycrystalline silicon through taking tailing by quartz tube |
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| CN201210536975.7A CN102976332B (en) | 2012-12-13 | 2012-12-13 | Method and equipment for directional solidification and purification of polycrystalline silicon through taking tailing by quartz tube |
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| CN103266349B (en) * | 2013-05-31 | 2015-07-15 | 大连理工大学 | High-purity hollow silicon material, as well as polycrystalline silicon and ingot silicon vacuum solid-liquid separation method and equipment |
| CN108697945B (en) * | 2015-12-30 | 2021-01-26 | 各星有限公司 | System and method for extracting liquid |
| CN106167917B (en) * | 2016-07-01 | 2019-06-18 | 大工（青岛）新能源材料技术研究院有限公司 | A kind of efficient polycrystalline silicon ingot casting partly melts method |
| CN106012009A (en) * | 2016-07-29 | 2016-10-12 | 大工（青岛）新能源材料技术研究院有限公司 | Half-melting process for polysilicon cast ingots |
| CN110243177A (en) * | 2019-05-09 | 2019-09-17 | 永平县泰达废渣开发利用有限公司 | A kind of more monocrystalline silicon cutting slag method of smelting |
| CN112064113B (en) * | 2020-10-22 | 2021-05-25 | 新余学院 | Polycrystalline silicon ingot furnace convenient to get rid of impurity layer |
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| CN102145894A (en) * | 2011-05-16 | 2011-08-10 | 大连隆田科技有限公司 | Method and device for smelting and purifying polysilicon by using electron beams and adopting slag filtering |
| CN102219219A (en) * | 2011-05-16 | 2011-10-19 | 大连隆田科技有限公司 | Method and equipment for purifying polycrystalline silicon by directional solidification and filter slag melting |
| CN202968134U (en) * | 2012-12-13 | 2013-06-05 | 青岛隆盛晶硅科技有限公司 | Quartz tube tailing-taking type equipment for directional solidification and purification of polysilicon |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102145894A (en) * | 2011-05-16 | 2011-08-10 | 大连隆田科技有限公司 | Method and device for smelting and purifying polysilicon by using electron beams and adopting slag filtering |
| CN102219219A (en) * | 2011-05-16 | 2011-10-19 | 大连隆田科技有限公司 | Method and equipment for purifying polycrystalline silicon by directional solidification and filter slag melting |
| CN202968134U (en) * | 2012-12-13 | 2013-06-05 | 青岛隆盛晶硅科技有限公司 | Quartz tube tailing-taking type equipment for directional solidification and purification of polysilicon |
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