CN102971869A - Enabling method of warm white light with high brightness and high color rendering property - Google Patents
Enabling method of warm white light with high brightness and high color rendering property Download PDFInfo
- Publication number
- CN102971869A CN102971869A CN2010800679309A CN201080067930A CN102971869A CN 102971869 A CN102971869 A CN 102971869A CN 2010800679309 A CN2010800679309 A CN 2010800679309A CN 201080067930 A CN201080067930 A CN 201080067930A CN 102971869 A CN102971869 A CN 102971869A
- Authority
- CN
- China
- Prior art keywords
- excitation wavelength
- light
- orange
- red
- light portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The present invention refers to an enabling method of warm white light with high brightness and high color rendering property, which includes the following steps: providing a white light part, a red light part with an exciting wavelength of 630-660nm, and an orange light part with an exciting wavelength of 590-610nm, coating a first fluorescent powder layer on the white light part, and coating a second fluorescent powder layer on the red light part with an exciting wavelength of 630-660nm and the orange light part with an exciting wavelength of 590-610nm. The concentration of the fluorescent powder of the second fluorescent powder layer is lower than the concentration of the fluorescent powder of the first fluorescent powder layer. The white light part, the red light part with an exciting wavelength of 630-660nm, and the orange light part with an exciting wavelength of 590-610nm are three chips with different colors, or three LEDs with different colors, or three different light emitting areas of one chip. Electrically connecting the white light part, the red light part with an exciting wavelength of 630-660nm, and the orange light part with an exciting wavelength of 590-610nm, then electrically connecting the power supply, thus warm white light with high brightness and high color rendering property is obtained.
Description
The present invention relates to field of semiconductor illumination, more particularly to a kind of implementation method of high brightness high-color-rendering-property warm white light.
Semiconductor lighting have environmental protection, overlong service life, energy-efficient, anti-adverse environment, simple in construction, small volume, lightweight, response it is fast,
Operating voltage is low and the characteristics of good security, therefore is described as the forth generation lighting electric light source after incandescent lamp, fluorescent lamp and electricity-saving lamp, or is 21st century green light source.
At present, the warm white for being applied to illumination of in the market mainly adds red fluorescence powder to make with blue-light LED chip, limited by current fluorescent material production technology, the luminous flux of red fluorescence powder is very low, make the light efficiency of warm white very low, colour rendering index 70 to 80 or so, can only also be extremely difficult to the requirement of illuminating product.Then propose red-light LED or chip replaces red fluorescence powder, the method that white light is produced with white light LED combination realizes high-color rendering white-light.But the technique of red light chips, the more difficult lifting of feux rouges brightness so that the light efficiency of overall warm white is relatively low are limited to, therefore need to further lift high-color-rendering-property warm white light light efficiency.
The invention technical problem to be solved is to provide a kind of method for realizing high brightness high-color-rendering-property warm white light with relatively low, the problem of high-color-rendering-property warm white light light efficiency is not high that solve current feux rouges brightness.
Solving the technical scheme that is used of technical problem of the present invention is：A kind of implementation method of high brightness high-color-rendering-property warm white light, it comprises the following steps：
Light portion is provided, the orange light part that the red light portion and excitation wavelength that excitation wavelength is 630nm-660nm are 590nm-610nm, the light portion includes a kind of chip of color, the orange light part that the red light portion and excitation wavelength that the excitation wavelength is 630nm-660nm are 590nm-610nm includes the chip of other two different colours, or the light portion, the orange light part that the red light portion and excitation wavelength that excitation wavelength is 630nm-660nm are 590nm-610nm is the LED of three kinds of different colours, or the light portion and three kinds of different light-emitting zones that the orange light part that the red light portion that excitation wavelength is 630nm-660nm and excitation wavelength are 590nm-610nm is same chip；The orange light part that red light portion and excitation wavelength that the light portion, excitation wavelength are 630nm-660nm are 590nm-610nm is electrically connected, then electric connection of power supply, you can obtain high brightness high-color-rendering-property warm white light.
It is used as the further improvement of the inventive method, the light portion is provided with the first phosphor powder layer, the orange light part that the red light portion and excitation wavelength that the excitation wavelength is 630nm-660nm are 590nm-610nm is provided with the second phosphor powder layer, and the phosphor concentration of the first phosphor powder layer of light portion is small described in the phosphor concentration ratio of the second phosphor powder layer of the orange light part that the red light portion and excitation wavelength that the excitation wavelength is 630nm-660nm are 590nm-610nm.
As the further improvement of the inventive method, the phosphor concentration for the second phosphor powder layer on orange light part that the red light portion and excitation wavelength that the excitation wavelength is 630nm-660nm are 590nm-610nm is the phosphor concentration 10%-90% of the first phosphor powder layer on the light portion.
It is used as the further improvement of the inventive method, the light portion is to excite yellow or yellow-green fluorescence bisque to be formed by blue chip, the red light chips that it is 630nm-660nm by excitation wavelength that the red light portion that the excitation wavelength is 630nm-660nm, which is, are that orange light chip excitated red fluorescent powder layer that is that the yellow or yellow-green fluorescence bisque on 630nm-660nm red light chips are formed or being 590nm-610nm by excitation wavelength is formed with excitation wavelength is coated in, orange light chip and be coated in orange on the orange light chip that excitation wavelength is 590nm-610nm that it is 590nm-610nm by excitation wavelength that the orange light part that the excitation wavelength is 590nm-610nm, which is, yellow or yellow-green fluorescence bisque are formed.
As the further improvement of the inventive method, the excitation wavelength of the blue chip is 380nm-460nm.
As the further improvement of the inventive method, the white light colour temperature that the light portion is sent is between 3500K-10000K.
As the further improvement of the inventive method, by adjusting the brightness ratio for the orange light part that red light portion and excitation wavelength that light portion, excitation wavelength are 630nm-660nm are 590nm-610nm to realize the change of different-colour.
Prior art is intersected at, a kind of implementation method of high brightness high-color-rendering-property warm white light of the invention has the advantages that：
1st, the light efficiency of warm white can be effectively improved, is more than in colour rendering index in the case of 85, the light transmittance efficiency of warm white reaches more than 100lm/w, the product light efficiency than prior art improves at least more than 20%, is more suitable for illumination.
2nd, deft design of the present invention, can apply and make on LED, LED module etc., reliability, the uniformity of product can be effectively improved, while being produced in batches using machinery equipment.
3rd, the consumption of fluorescent material is effectively controlled, can not only increase the light efficiency of product, can also effectively save product cost.
4th, by adjusting red, white brightness, LED, LED module, the LED chip of different brightness and colour temperature section is obtained, different using effects is obtained, meets the requirement to color of varying environment.
5th, the orange light chip top for being 590-610nm by the feux rouges and excitation wavelength that are 630-660nm in excitation wavelength coats fluorescent material, increase the diffusing reflection of light, the light extraction for the orange light part that the red light portion and excitation wavelength that increase excitation wavelength is 630-660nm are 590-610nm, so as to reach the purpose of lifting light efficiency.
Below in conjunction with drawings and the embodiments, the invention will be further described, in accompanying drawing：
Fig. 1 is a kind of profile of the structure of the first embodiment of the implementation method of high brightness high-color-rendering-property warm white light of the invention；
Fig. 2 is a kind of profile of the structure of the second embodiment of the implementation method of high brightness high-color-rendering-property warm white light of the invention；
Fig. 3 is a kind of profile of the structure of the 3rd embodiment of the implementation method of high brightness high-color-rendering-property warm white light of the invention.
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with drawings and the embodiments, the present invention will be described in further detail.It should be appreciated that embodiment described herein is not intended to limit the present invention only to explain the present invention.
As shown in figure 1, in a kind of first embodiment of the implementation method of high brightness high-color-rendering-property warm white light of the present invention, the implementation method of the high brightness high-color-rendering-property warm white light is realized by a brightness high-color-rendering-property warm white light LED.The brightness high-color-rendering-property warm white light LED includes the support 100 with carrier cup 110, the red light chips 20 that an excitation wavelength is 630-660nm and the orange light chip 21 that an excitation wavelength is 590-610nm are fixedly connected with the edge of the carrier cup 110 of the support 100, four blue chips 30 are fixedly connected with the centre of the carrier cup 110 of the support 100, wherein, this four blue chips 30 are arranged side by side two-by-two.The orange light chip 21 and blue chip 30 that red light chips 20 that the excitation wavelength is 630-660nm, excitation wavelength are 590-610nm are connected by electrode wires with drive circuit, and yellow or yellow-green fluorescence bisque 40 are coated with these blue chips 30（First phosphor powder layer）To produce white light, then the red light chips 20 and excitation wavelength for being 630-660nm in these excitation wavelengths be 590-610nm orange light chip 21 on coating one layer of less yellow of concentration or yellow-green fluorescence bisque 50（Second phosphor powder layer）, increase the diffusing reflection of the feux rouges that excitation wavelength is 630-660nm and the orange light that excitation wavelength is 590-610nm, effectively improve LED light efficiency.The carrier cup 110 has upper groove and low groove, the two grooves are stepped, the orange light chip 21 that the red light chips 20 and excitation wavelength that the excitation wavelength is 630-660nm are 590-610nm is arranged in upper groove, and four blue-light LED chips 30 are uniformly arranged in the low groove of centre.The position that the orange light chip 21 that the red light chips 20 and excitation wavelength that the excitation wavelength is 630-660nm are 590-610nm is set is higher than the position that four blue chips 30 are set.Due to the excitation wavelength be 630-660nm red light chips 20 and excitation wavelength be 590-610nm orange light chip 21 be located at the carrier cup 110 edge, and four blue chips 30 are evenly distributed on the center of the carrier cup 110, it so can effectively reduce the gold-tinted circle of hot spot periphery, make hot spot uniform, light-out effect is optimal.
As shown in Fig. 2 in a kind of second embodiment of the implementation method of high brightness high-color-rendering-property warm white light of the present invention, the implementation method of the high brightness high-color-rendering-property warm white light is realized by a LED chip.The basic epitaxial structure of light portion is first sequentially completed in metal organic chemical vapor deposition wafer stove (MOCVD) from top to bottom successively：Substrate 1, cushion 2, N layers 3, quantum well layer 4, P layers 5, current-diffusion layer 6, and form one layer of yellow or yellow-green fluorescence bisque 9 by the way of sputtering, absorption or growth in the upper surface of current-diffusion layer 6；Then in the middle of the epitaxial structure of the light portion, grow P layers 13, quantum well layer 14, N layers 15 successively by the way of regrowing since the N layers of light portion, so as to form the red light portion that excitation wavelength is 630-660nm, grow P layers 16, quantum well layer 17, N layers 18 successively by the way of regrowing since the N layers of red light portion, one layer of yellow, yellow green, red or fluorescent orange bisque 19 are formed by the way of sputtering, absorption or growth in the outside of N layers 18, so as to form the orange light part that excitation wavelength is 590-610nm；Then it is setting N poles 8 on the N layers 18 of 590-610nm orange light part in excitation wavelength, then in the upper setting P poles 7 of the current-diffusion layer 6, then to LED chip
P and N poles are processed.Scribing, test are finally carried out to LED chip workprint and is sorted, it is possible to the LED chip of high brightness high-color-rendering-property warm white light can be realized needed for obtaining.
As shown in figure 3, in a kind of 3rd embodiment of high brightness high-color-rendering-property warm white light of the invention, the implementation method of the high brightness high-color-rendering-property warm white light is realized by LED modules.The LED modules include lamp plate 30, red-light LED of the excitation wavelength of several high brightness for 630-660nm are fixed on lamp plate 30
41st, white light LEDs 42 and the orange light LED43 that excitation wavelength is 590-610nm.Wherein, three white light LEDs 42 are uniformly arranged on the center of lamp plate 30, five white light LEDs
42 and two excitation wavelengths be 630-660nm red-light LED 41 and excitation wavelength be 590-610nm orange light LED43 intervals be evenly distributed on three white light LEDs
42 surrounding, it is the yellow or yellow-green fluorescence bisque on 630-660nm red light chips that the red-light LED that the excitation wavelength is 630-660nm, which includes the red light chips that excitation wavelength is 630-660nm and is coated in the excitation wavelength, the red light chips that excitation wavelength is 630-660nm be stimulated produce excitation wavelength be 630-660nm feux rouges, by the diffusing reflection of phosphor powder layer, purpose of the increase excitation wavelength for 630-660nm feux rouges brightness is reached.The orange light LED that the excitation wavelength is 590-610nm includes the orange light chip that excitation wavelength is 590-610nm and the yellow being coated on the orange light chip that the excitation wavelength is 590-610nm or yellow-green fluorescence bisque, the orange light chip that excitation wavelength is 590-610nm be stimulated produce excitation wavelength be 590-610nm orange light, by the diffusing reflection of phosphor powder layer, purpose of the increase excitation wavelength for 590-610nm orange light brightness is reached.By adjusting the red-light LED that excitation wavelength is 630-660nm
41st, white light LEDs
42 and excitation wavelength for 590-610nm orange light LED43 quantity or light a number, so as to obtain different brightness and different colour temperatures.For example, lighting the red-light LED that 2 excitation wavelengths are 630-660nm
41st, the orange light LED43 that 8 white light LEDs 42 and 1 excitation wavelength are 590-610nm, colour temperature reaches 2700K.Light the red-light LED that 1 excitation wavelength is 630-660nm
41st, the orange light LED43 that 8 white light LEDs 42 and 3 excitation wavelengths are 590-610nm, can make colour temperature reach 4000K.By that analogy, permutation and combination is carried out, different illuminating effects can be obtained.
A kind of implementation method of high brightness high-color-rendering-property warm white light of the present invention, has the advantages that：
1st, the light efficiency of warm white can be effectively improved, is more than in colour rendering index in the case of 85, the light transmittance efficiency of warm white reaches more than 100lm/w, the product light efficiency than prior art improves at least more than 20%, is more suitable for illumination.
2nd, deft design of the present invention, can apply and make on LED, LED module etc., reliability, the uniformity of product can be effectively improved, while being produced in batches using machinery equipment.
3rd, the consumption of fluorescent material is effectively controlled, can not only increase the light efficiency of product, can also effectively save product cost.
4th, by adjusting red, white brightness, LED, LED module, the LED chip of different brightness and colour temperature section is obtained, different using effects is obtained, meets the requirement to color of varying environment.
5th, the orange light chip top for being 590-610nm by the feux rouges and excitation wavelength that are 630-660nm in excitation wavelength coats fluorescent material, increase the diffusing reflection of light, the light extraction for the orange light part that the red light portion and excitation wavelength that increase excitation wavelength is 630-660nm are 590-610nm, so as to reach the purpose of lifting light efficiency.
The better embodiment of the present invention is the foregoing is only, is not intended to limit the invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc. should be included in the scope of the protection.
Claims (7)
1st, a kind of implementation method of high brightness high-color-rendering-property warm white light, it comprises the following steps：
Light portion is provided, the orange light part that the red light portion and excitation wavelength that excitation wavelength is 630nm-660nm are 590nm-610nm, the light portion includes a kind of chip of color, the orange light part that the red light portion and excitation wavelength that the excitation wavelength is 630nm-660nm are 590nm-610nm includes the chip of other two different colours, or the light portion, the orange light part that the red light portion and excitation wavelength that excitation wavelength is 630nm-660nm are 590nm-610nm is the LED of three kinds of different colours, or the light portion and three kinds of different light-emitting zones that the orange light part that the red light portion that excitation wavelength is 630nm-660nm and excitation wavelength are 590nm-610nm is same chip；
The orange light part that red light portion and excitation wavelength that the light portion, excitation wavelength are 630nm-660nm are 590nm-610nm is electrically connected, then electric connection of power supply, you can obtain high brightness high-color-rendering-property warm white light.
A kind of implementation method of high brightness high-color-rendering-property warm white light according to claim 1, it is characterized in that, the light portion is provided with the first phosphor powder layer, the orange light part that the red light portion and excitation wavelength that the excitation wavelength is 630nm-660nm are 590nm-610nm is provided with the second phosphor powder layer, and the phosphor concentration of the first phosphor powder layer of light portion is small described in the phosphor concentration ratio of the second phosphor powder layer of the orange light part that the red light portion and excitation wavelength that the excitation wavelength is 630nm-660nm are 590nm-610nm.
A kind of implementation method of high brightness high-color-rendering-property warm white light according to claim 2, characterized in that, the phosphor concentration of the second phosphor powder layer on the orange light part that red light portion and excitation wavelength that the excitation wavelength is 630nm-660nm are 590nm-610nm is the phosphor concentration 10%-90% of the first phosphor powder layer on the light portion.
A kind of implementation method of high brightness high-color-rendering-property warm white light according to claim 1, it is characterized in that, the light portion is to excite yellow or yellow-green fluorescence bisque to be formed by blue chip, the red light chips that it is 630nm-660nm by excitation wavelength that the red light portion that the excitation wavelength is 630nm-660nm, which is, are that orange light chip excitated red fluorescent powder layer that is that the yellow or yellow-green fluorescence bisque on 630nm-660nm red light chips are formed or being 590nm-610nm by excitation wavelength is formed with excitation wavelength is coated in, orange light chip and be coated in orange on the orange light chip that excitation wavelength is 590nm-610nm that it is 590nm-610nm by excitation wavelength that the orange light part that the excitation wavelength is 590nm-610nm, which is, yellow or yellow-green fluorescence bisque are formed.
The implementation method of a kind of high brightness high-color-rendering-property warm white light according to claim 4, it is characterised in that the excitation wavelength of the blue chip is 380nm-460nm.
The implementation method of a kind of high brightness high-color-rendering-property warm white light according to claim 1, it is characterised in that the white light colour temperature that the light portion is sent is between 3500K-10000K.
A kind of implementation method of high brightness high-color-rendering-property warm white light according to claim 1, characterized in that, by adjusting the brightness ratio for the orange light part that red light portion and excitation wavelength that light portion, excitation wavelength are 630nm-660nm are 590nm-610nm to realize the change of different-colour.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2010/078633 WO2012061988A1 (en) | 2010-11-11 | 2010-11-11 | Enabling method of warm white light with high brightness and high color rendering property |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102971869A true CN102971869A (en) | 2013-03-13 |
Family
ID=46050316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800679309A Pending CN102971869A (en) | 2010-11-11 | 2010-11-11 | Enabling method of warm white light with high brightness and high color rendering property |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102971869A (en) |
| WO (1) | WO2012061988A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104235633A (en) * | 2013-06-14 | 2014-12-24 | 展晶科技(深圳)有限公司 | Led lamp |
| CN111795307A (en) * | 2020-07-02 | 2020-10-20 | 中国计量大学 | LED device for realizing low blue light harm and high color rendering |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6692173B2 (en) * | 2016-02-08 | 2020-05-13 | シチズン電子株式会社 | Light emitting device |
| CN106783824A (en) * | 2017-01-10 | 2017-05-31 | 深圳市耀铭豪智能科技有限公司 | A kind of full spectrum light source of health and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007006733A1 (en) * | 2007-02-06 | 2008-08-07 | Axel Fitzner | LED combination lamp for e.g. display window, has white, red and orange LEDs to provide light for general illumination, with luminous intensities, and arranged in combined manner at mirror reflector |
| GB2456123A (en) * | 2007-02-12 | 2009-07-08 | Ecoled Lighting Ltd | Light emitting diode lamp |
| CN201391790Y (en) * | 2009-03-06 | 2010-01-27 | 研晶光电股份有限公司 | High color rendering LED device |
| CN101657671A (en) * | 2007-02-22 | 2010-02-24 | 科锐Led照明科技公司 | Lighting device, means of illumination, filter and filtering method |
| CN101740705A (en) * | 2009-12-02 | 2010-06-16 | 深圳市众明半导体照明有限公司 | Warm white LED and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2428868Y (en) * | 2000-06-08 | 2001-05-02 | 长春市泰山科技有限责任公司 | White-light diode |
-
2010
- 2010-11-11 CN CN2010800679309A patent/CN102971869A/en active Pending
- 2010-11-11 WO PCT/CN2010/078633 patent/WO2012061988A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007006733A1 (en) * | 2007-02-06 | 2008-08-07 | Axel Fitzner | LED combination lamp for e.g. display window, has white, red and orange LEDs to provide light for general illumination, with luminous intensities, and arranged in combined manner at mirror reflector |
| GB2456123A (en) * | 2007-02-12 | 2009-07-08 | Ecoled Lighting Ltd | Light emitting diode lamp |
| CN101657671A (en) * | 2007-02-22 | 2010-02-24 | 科锐Led照明科技公司 | Lighting device, means of illumination, filter and filtering method |
| CN201391790Y (en) * | 2009-03-06 | 2010-01-27 | 研晶光电股份有限公司 | High color rendering LED device |
| CN101740705A (en) * | 2009-12-02 | 2010-06-16 | 深圳市众明半导体照明有限公司 | Warm white LED and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104235633A (en) * | 2013-06-14 | 2014-12-24 | 展晶科技(深圳)有限公司 | Led lamp |
| CN111795307A (en) * | 2020-07-02 | 2020-10-20 | 中国计量大学 | LED device for realizing low blue light harm and high color rendering |
| CN111795307B (en) * | 2020-07-02 | 2023-06-27 | 中国计量大学 | LED device for realizing low blue light hazard and high color rendering |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012061988A1 (en) | 2012-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102278621A (en) | White light emitting diode (LED) module with adjustable color temperature, illumination equipment and manufacturing method | |
| CN102287632A (en) | Illuminating apparatus and method of controlling illuminating apparatus | |
| CN101915369A (en) | LED white light source module | |
| US20130015461A1 (en) | Light-emitting Device Capable of Producing White Light And Light Mixing Method For Producing White Light With Same | |
| WO2012092808A1 (en) | Led module and illumination device | |
| US11315908B2 (en) | LED package structure having improved brightness | |
| CN202275828U (en) | Color temperature adjustable white LED integrated packaging structure | |
| TW201227920A (en) | LED package substrate and fabrication method thereof | |
| CN201925773U (en) | LED (light-emitting diode) light source module with adjustable color temperature and color rendering index (CRI) | |
| TW201010125A (en) | White light light-emitting diodes | |
| CN102569659A (en) | Organic-inorganic LED (Light-Emitting Diode) surface light source module and manufacturing method thereof | |
| CN102157507B (en) | White LED integration module packaging structure with adjustable color temperature and color rendering indexes | |
| CN103839937A (en) | White light LED module | |
| CN102971869A (en) | Enabling method of warm white light with high brightness and high color rendering property | |
| TWI584671B (en) | Light device and its light emitting diode module | |
| CN201628103U (en) | Light mixed LED module | |
| CN202598261U (en) | High-light high color rendering index (CRI) warm white light light-emitting diode (LED) lamp and LED module | |
| CN113921688A (en) | Novel colorful LED light source | |
| CN202074272U (en) | White light LED module with adjustable color temperature and illumination equipment | |
| CN102779814A (en) | Light emitting element capable of giving out white light and light mixing method of light emitting element | |
| CN109841719B (en) | Semiconductor light emitting diode device and lamp | |
| CN204696115U (en) | A kind of three primary colors white LED light source | |
| EP2407706A1 (en) | Warm white light LED lamp with high luminance and high color rendering index and led module | |
| CN101255956A (en) | LED lamp | |
| CN103022288B (en) | Light emitting diode and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20160420 |
|
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |