CN102969334A - Color filter structure for WOLED (White Organic Light Emitting Diode) and manufacture method of color filter structure - Google Patents
Color filter structure for WOLED (White Organic Light Emitting Diode) and manufacture method of color filter structure Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000011159 matrix material Substances 0.000 claims abstract description 45
- 239000011521 glass Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 62
- 239000011241 protective layer Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 4
- 101100175002 Oryza sativa subsp. indica RGBB gene Proteins 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
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Abstract
The invention provides a color filter structure for a WOLED (White Organic Light Emitting Diode) and a manufacture method of the color filter structure. The color filter structure comprises a glass substrate, a black matrix pattern layer arranged above the glass substrate, and a pixel layer, wherein the black matrix pattern layer comprises a plurality of black matrixes arranged at intervals; the pixel layer comprises a red subpixel, a green subpixel, a first blue subpixel and a second subpixel; the red subpixel, the green subpixel, the first blue subpixel and the second blue subpixel are respectively arranged between adjacent black matrixes; and the film thickness of the second blue subpixel is less than that of the first blue subpixel. Since the red subpixel, the green subpixel, the first blue subpixel and the second blue subpixel are arranged in the pixel layer and the film thickness of the second blue subpixel is less than that of the first blue subpixel, the frequency spectrum behavior of a light source corrects can be corrected through the second blue subpixel, and further the light source reaches a color temperature requirement required by a display.
Description
Technical Field
The present invention relates to Organic Light Emitting displays, and more particularly, to a color filter structure for White Organic Light Emitting Diode (WOLED) and a method for fabricating the same.
Background
Organic Light Emitting Diodes (OLEDs) have many advantages such as active Light emission, high Light Emitting efficiency, fast response time, low operating voltage, wide viewing angle, thin panel thickness, low power consumption, wide operating temperature range, and flexible Display, and are called a third generation Display technology following CRTs (Cathode Ray tubes) and LCDs (Liquid Crystal displays). The white organic light emitting diode belongs to a surface light source, and can be manufactured into a flat light source with a large area and any shape compared with a point light source of an LED, so that the white organic light emitting diode is more suitable for a backlight source of a liquid crystal display and a full-color OLED display.
In full color OLED displays, the three primary colors (Red, Green and Blue), while equally important, white light emission is gaining more attention because any desired color range can be obtained by filtering the white light. For example, an OLED device may include compounds that emit three lights, red, green, and blue, to collectively produce white light. However, this also brings about problems such as the efficiency of the device being lower than 1lm/W, the need for a large driving voltage, and the short lifetime.
In the prior art, the color point of the light source is yellow due to the service life of the WOLED, and it is difficult to achieve the color point requirement (e.g., 9000-10000K) of the standard television display. One solution is to use an unequal-scale pixel aperture ratio to achieve the standard white point position, but custom mask applications add cost. Furthermore, if a standard white point light source with a relatively close color point is directly adopted, the service life is shortened.
In view of the above, a problem to be solved by those skilled in the art is how to design a color filter structure for a WOLED to effectively eliminate the above-mentioned defects, save cost, and prolong the service life of a light source.
Disclosure of Invention
Aiming at the defects existing in the WOLED light source in the prior art when in use, the invention provides a color filter structure for a WOLED and a manufacturing method thereof.
According to an aspect of the present invention, there is provided a color filter structure for a white organic light emitting diode, including:
a glass substrate;
the black matrix pattern layer is positioned above the glass substrate and comprises a plurality of black matrixes distributed at intervals; and
a pixel layer including a red sub-pixel, a green sub-pixel, a first blue sub-pixel, and a second blue sub-pixel, wherein each of the red sub-pixel, the green sub-pixel, the first blue sub-pixel, and the second blue sub-pixel is disposed between adjacent black matrixes,
wherein the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.
Preferably, the color temperature of the white organic light emitting diode light source after passing through the second blue sub-pixel is between 5500K and 13000K.
Preferably, the color temperature of the white light organic light emitting diode light source passing through the second blue sub-pixel is T2 and the color temperature of the white light organic light emitting diode light source not passing through the second blue sub-pixel is T1, then T2 and T1 satisfy: T2-T1> 2000K.
Preferably, the color filter structure further includes a protection layer (OC, Over Coat) located above the pixel layer and used for filling and leveling the pixel layer.
According to another aspect of the present invention, there is provided a method for manufacturing a color filter structure for a white organic light emitting diode, including the steps of:
providing a glass substrate;
forming a black matrix pattern layer above the glass substrate, wherein the black matrix pattern layer comprises a plurality of black matrixes distributed at intervals;
forming a red sub-pixel, a green sub-pixel and a first blue sub-pixel between the adjacent black matrixes; and
and forming a second blue sub-pixel between the adjacent black matrixes, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.
Preferably, the manufacturing method further includes: and forming a protective layer above the pixel layer so as to fill and level up the pixel layer.
Preferably, the color temperature of the white organic light emitting diode light source after passing through the second blue sub-pixel is between 5500K and 13000K.
According to still another aspect of the present invention, there is provided a method for manufacturing a color filter structure for a white organic light emitting diode, including the steps of:
providing a glass substrate;
forming a black matrix pattern layer above the glass substrate, wherein the black matrix pattern layer comprises a plurality of black matrixes distributed at intervals;
forming a red sub-pixel and a green sub-pixel, wherein the red sub-pixel and the green sub-pixel are positioned between adjacent black matrixes;
coating a blue resistance layer above the red sub-pixel and the green sub-pixel;
a first blue sub-pixel and a second blue sub-pixel are formed by adopting a half dimming process (half tone), wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.
Preferably, the manufacturing method further includes: and forming a protective layer above the pixel layer so as to fill and level up the pixel layer.
Preferably, the color temperature of the white organic light emitting diode light source after passing through the second blue sub-pixel is between 5500K and 13000K.
By adopting the color filter structure for the WOLED and the manufacturing method thereof, RGBB' structures of the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel are adopted in the pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel, so that a light source can correct the spectrum behavior through the second blue sub-pixel, and the color temperature requirement required by a display can be further met. In addition, the first blue sub-pixel and the second blue sub-pixel are made of color resistance materials with the same color, and only the film thickness is different, so that the line changing cost in the manufacturing process can be saved.
Drawings
The various aspects of the present invention will become more apparent to the reader after reading the detailed description of the invention with reference to the attached drawings. Wherein,
FIG. 1 is a schematic diagram of a color filter structure for a white OLED according to an embodiment of the present invention;
FIG. 2 is a block flow diagram illustrating a method for fabricating a color filter structure for a white OLED according to another embodiment of the present invention;
FIG. 3 is an exploded view of the main steps of a color filter structure formed by the method of FIG. 2;
FIG. 4 is a block flow diagram illustrating a method for fabricating a color filter structure for a white OLED according to yet another embodiment of the present invention; and
fig. 5 is an exploded view of the main steps of a color filter structure formed by the manufacturing method of fig. 4.
Detailed Description
In order to make the present disclosure more complete and complete, reference is made to the accompanying drawings, in which like references indicate similar or analogous elements, and to the various embodiments of the invention described below. However, it will be understood by those of ordinary skill in the art that the examples provided below are not intended to limit the scope of the present invention. In addition, the drawings are only for illustrative purposes and are not drawn to scale.
Specific embodiments of various aspects of the present invention are described in further detail below with reference to the accompanying drawings.
Fig. 1 is a schematic diagram illustrating a color filter structure for a white organic light emitting diode according to an embodiment of the invention.
Referring to fig. 1, the color filter structure of the present invention includes: a glass substrate 10, a black matrix pattern layer and a pixel layer.
Specifically, the black matrix pattern layer is located above the glass substrate 10. In fig. 1, the black matrix pattern layer includes a plurality of black matrices, i.e., black matrices 201, 203, 205, 207, and 209, which are spaced apart. The pixel layer includes a Red sub-pixel (Red sub-pixel) 302, a Green sub-pixel (Green sub-pixel) 304, a first blue sub-pixel (blue sub-pixel) 306, and a second blue sub-pixel 308. Each of the red sub-pixel 302, the green sub-pixel 304, the first blue sub-pixel 306, and the second blue sub-pixel 308 is disposed between adjacent black matrixes. For example, the red subpixel 302 is located between the black matrix 201 and the black matrix 203, the green subpixel 304 is located between the black matrix 203 and the black matrix 205, the first blue subpixel 306 is located between the black matrix 205 and the black matrix 207, and the second blue subpixel 308 is located between the black matrix 207 and the black matrix 209.
It should be noted that the color filter structure of the present invention adopts an RGBB' architecture with four sub-pixels, and the film thickness of the second blue sub-pixel 308 is set to be smaller than that of the first blue sub-pixel 306. Thus, after the white light OLED passes through the second blue sub-pixel 308, the color temperature of the display screen can be adjusted.
In one embodiment, the color temperature of the white OLED light source after passing through the second blue sub-pixel 308 is between 5500K and 13000K. Preferably, if the color temperature of the white light organic light emitting diode light source passing through the second blue sub-pixel 308 is defined as T2, and the color temperature of the white light organic light emitting diode light source not passing through the second blue sub-pixel 308 is defined as T1, then T2 and T1 satisfy: T2-T1> 2000K.
In one embodiment, the color filter structure further includes a protection layer 40 (OC, Over Coat). The passivation layer 40 is located above the pixel layer and is used to fill in the pixel layer. For example, the protective layer 40 fills not only the left regions of the black matrix 201 and the red subpixel 302, but also the regions between the red subpixel 302 and the green subpixel 304 and above the black matrix 203.
Fig. 2 is a flow chart illustrating a method for manufacturing a color filter structure for a white organic light emitting diode according to another embodiment of the present invention. Fig. 3 is an exploded view of the main steps of a color filter structure formed by the manufacturing method of fig. 2.
Referring to fig. 2, in the manufacturing method, first, a glass substrate is provided (step S101). Then, a black matrix pattern layer is formed on the glass substrate, wherein the black matrix pattern layer includes a plurality of black matrixes distributed at intervals (step S103). Next, a red sub-pixel, a green sub-pixel and a first blue sub-pixel are formed between the adjacent black matrixes (step S105). Finally, a second blue sub-pixel is formed between the adjacent black matrixes, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel (step S107).
Referring to fig. 2 and 3, in the method for manufacturing the color filter structure, a glass substrate 10 is provided first. Then, a black matrix pattern layer is formed on the glass substrate 10, and the black matrix pattern layer is composed of a plurality of black matrixes 201, 203, 205, 207 and 209 which are distributed at intervals, as shown in fig. 3 (a). Then, a red sub-pixel 302, a green sub-pixel 304 and a first blue sub-pixel 306 are formed between the adjacent black matrixes. In more detail, a red sub-pixel 302 is formed between the black matrix 201 and the black matrix 203, a green sub-pixel 304 is formed between the black matrix 203 and the black matrix 205, and a first blue sub-pixel 306 is formed between the black matrix 205 and the black matrix 207. Finally, a second blue sub-pixel 308 is formed between the adjacent black matrix 207 and black matrix 209, wherein the red sub-pixel 302, the green sub-pixel 304, the first blue sub-pixel 306 and the second blue sub-pixel 308 form a pixel layer, and the film thickness of the second blue sub-pixel 308 is smaller than that of the first blue sub-pixel 306, as shown in fig. 3 (b).
In one embodiment, the method of manufacturing further comprises: a protective layer 40 is formed over the pixel layer to fill the pixel layer, as shown in fig. 3 (c).
Fig. 4 is a flow chart illustrating a method for fabricating a color filter structure for a white organic light emitting diode according to another embodiment of the present invention. Fig. 5 is an exploded view of the main steps of a color filter structure formed by the manufacturing method of fig. 4.
Referring to fig. 4, in the manufacturing method, first, a glass substrate is provided (step S201). Then, a black matrix pattern layer is formed on the glass substrate, wherein the black matrix pattern layer includes a plurality of black matrixes distributed at intervals (step S203). Next, a red sub-pixel and a green sub-pixel are formed between the adjacent black matrixes (step S205). Next, a blue resist layer is coated on the red and green sub-pixels (step S207). Finally, a first blue sub-pixel and a second blue sub-pixel are formed by using a half tone (half tone) process, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel (step S209).
Referring to fig. 4 and 5, in the method for manufacturing the color filter structure, a glass substrate 10 is provided first. Then, a black matrix pattern layer is formed on the glass substrate 10, and the black matrix pattern layer is composed of a plurality of black matrixes 201, 203, 205, 207 and 209 which are distributed at intervals. Then, a red sub-pixel 302 and a green sub-pixel 304 are formed between the adjacent black matrixes. Specifically, a red sub-pixel 302 is formed between the black matrix 201 and the black matrix 203, and a green sub-pixel 304 is formed between the black matrix 203 and the black matrix 205. Next, a blue resist layer 50 is applied over the red subpixel 302 and the green subpixel 304, as shown in FIG. 5 (a). Finally, the blue resist layer 50 is processed by a half tone (half tone) process to form a first blue sub-pixel 306 and a second blue sub-pixel 310, as shown in fig. 5 (b). Here, the red subpixel 302, the green subpixel 304, the first blue subpixel 306, and the second blue subpixel 310 constitute a pixel layer, and the film thickness of the second blue subpixel 310 is smaller than that of the first blue subpixel 306.
In one embodiment, the method of manufacturing further comprises: a protective layer 40 is formed over the pixel layer to fill the pixel layer, as shown in fig. 5 (c).
By adopting the color filter structure for the WOLED and the manufacturing method thereof, RGBB' structures of the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel are adopted in the pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel, so that a light source can correct the spectrum behavior through the second blue sub-pixel, and the color temperature requirement required by a display can be further met. In addition, the first blue sub-pixel and the second blue sub-pixel are made of color resistance materials with the same color, and only the film thickness is different, so that the line changing cost in the manufacturing process can be saved.
Hereinbefore, specific embodiments of the present invention are described with reference to the drawings. However, those skilled in the art will appreciate that various modifications and substitutions can be made to the specific embodiments of the present invention without departing from the spirit and scope of the invention. Such modifications and substitutions are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (10)
1. A color filter structure for White Organic Light Emitting Diode (WOLED), the color filter structure comprising:
a glass substrate;
the black matrix pattern layer is positioned above the glass substrate and comprises a plurality of black matrixes distributed at intervals; and
a pixel layer including a red sub-pixel, a green sub-pixel, a first blue sub-pixel, and a second blue sub-pixel, wherein each of the red sub-pixel, the green sub-pixel, the first blue sub-pixel, and the second blue sub-pixel is disposed between adjacent black matrixes,
wherein the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.
2. The color filter structure of claim 1, wherein the color temperature of the white OLED light source after passing through the second blue sub-pixel is between 5500K and 13000K.
3. The color filter structure of claim 2, wherein the color temperature of the white OLED light source passing through the second blue sub-pixel is T2 and the color temperature of the white OLED light source not passing through the second blue sub-pixel is T1, then T2 and T1 satisfy:
T2-T1>2000K。
4. the color filter structure of claim 1, further comprising a protection layer (OC, Over Coat) Over the pixel layer for filling the pixel layer.
5. A method for manufacturing a color filter structure for a White Organic Light Emitting Diode (WOLED), the method comprising:
providing a glass substrate;
forming a black matrix pattern layer above the glass substrate, wherein the black matrix pattern layer comprises a plurality of black matrixes distributed at intervals;
forming a red sub-pixel, a green sub-pixel and a first blue sub-pixel between the adjacent black matrixes; and
and forming a second blue sub-pixel between the adjacent black matrixes, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.
6. The manufacturing method according to claim 5, characterized by further comprising:
and forming a protective layer above the pixel layer so as to fill and level up the pixel layer.
7. The manufacturing method of claim 5, wherein the color temperature of the white OLED light source after passing through the second blue sub-pixel is between 5500K and 13000K.
8. A method for manufacturing a color filter structure for a White Organic Light Emitting Diode (WOLED), the method comprising:
providing a glass substrate;
forming a black matrix pattern layer above the glass substrate, wherein the black matrix pattern layer comprises a plurality of black matrixes distributed at intervals;
forming a red sub-pixel and a green sub-pixel, wherein the red sub-pixel and the green sub-pixel are positioned between adjacent black matrixes;
coating a blue resistance layer above the red sub-pixel and the green sub-pixel;
a first blue sub-pixel and a second blue sub-pixel are formed by adopting a half dimming process (half tone), wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.
9. The manufacturing method according to claim 8, characterized by further comprising:
and forming a protective layer above the pixel layer so as to fill and level up the pixel layer.
10. The manufacturing method of claim 8, wherein the color temperature of the white OLED light source after passing through the second blue sub-pixel is between 5500K and 13000K.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20150349029A1 (en) * | 2014-05-27 | 2015-12-03 | Lg Display Co., Ltd. | Display panel and method for manufacturing thereof |
| CN106229425A (en) * | 2016-09-09 | 2016-12-14 | 广州新视界光电科技有限公司 | A kind of full-color organic light emitting display of top emitting and preparation method |
| CN106531771A (en) * | 2016-12-27 | 2017-03-22 | 上海天马有机发光显示技术有限公司 | Display substrate, display panel, display device and pixel driving method |
| CN109473464A (en) * | 2018-11-16 | 2019-03-15 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof |
| WO2019205425A1 (en) * | 2018-04-25 | 2019-10-31 | 深圳市华星光电技术有限公司 | Woled display panel and manufacturing method therefor |
| CN111048559A (en) * | 2019-11-25 | 2020-04-21 | 信利（惠州）智能显示有限公司 | Display screen, cover plate and manufacturing method of cover plate |
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- 2012-11-28 CN CN 201210493305 patent/CN102969334A/en active Pending
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| US20150349029A1 (en) * | 2014-05-27 | 2015-12-03 | Lg Display Co., Ltd. | Display panel and method for manufacturing thereof |
| US10388705B2 (en) * | 2014-05-27 | 2019-08-20 | Lg Display Co., Ltd. | Display panel and method for manufacturing thereof |
| CN106229425A (en) * | 2016-09-09 | 2016-12-14 | 广州新视界光电科技有限公司 | A kind of full-color organic light emitting display of top emitting and preparation method |
| CN106229425B (en) * | 2016-09-09 | 2018-05-18 | 广州新视界光电科技有限公司 | A kind of full-color organic light emitting display of top emitting and preparation method |
| CN106531771A (en) * | 2016-12-27 | 2017-03-22 | 上海天马有机发光显示技术有限公司 | Display substrate, display panel, display device and pixel driving method |
| WO2019205425A1 (en) * | 2018-04-25 | 2019-10-31 | 深圳市华星光电技术有限公司 | Woled display panel and manufacturing method therefor |
| US11088346B2 (en) | 2018-04-25 | 2021-08-10 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | WOLED display panel with CF layer arranged inside thin-film encapsulation layer for reducing thickness and achieving flexibility and manufacturing method thereof |
| CN109473464A (en) * | 2018-11-16 | 2019-03-15 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof |
| CN111048559A (en) * | 2019-11-25 | 2020-04-21 | 信利（惠州）智能显示有限公司 | Display screen, cover plate and manufacturing method of cover plate |
| CN112666744A (en) * | 2020-12-29 | 2021-04-16 | 厦门天马微电子有限公司 | Color film substrate and manufacturing method thereof, display panel and display device |
| CN112666744B (en) * | 2020-12-29 | 2022-08-12 | 厦门天马微电子有限公司 | Color film substrate and manufacturing method thereof, display panel and display device |
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Application publication date: 20130313 |