CN102969334A - Color filter structure for WOLED and manufacturing method thereof - Google Patents

Abstract

The invention provides a color filter structure for a WOLED and a manufacturing method thereof. The color filter structure includes: a glass substrate; the black matrix pattern layer is positioned above the glass substrate and comprises a plurality of black matrixes distributed at intervals; and a pixel layer including a red sub-pixel, a green sub-pixel, a first blue sub-pixel, and a second blue sub-pixel. The red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel are all arranged between the adjacent black matrixes. The film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel. By adopting the invention, the structure of the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel is adopted in the pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel, so that the light source can correct the spectrum behavior through the second blue sub-pixel, and the color temperature requirement required by the display can be further achieved.

Description

A kind of color filter structure for WOLED and its manufacturing method

technical field

The present invention relates to an organic light emitting display, in particular to a color filter structure for WOLED (White Organic Light Emitting Diode, white organic light emitting diode) and a manufacturing method thereof.

Background technique

Organic Light Emitting Diode (OLED) has many advantages such as active luminescence, high luminous efficiency, fast response time, low operating voltage, wide viewing angle, thin panel thickness, low power consumption, wide operating temperature range, and flexible display. Therefore, it is called the third-generation display technology after CRT (Cathode Ray Tube, cathode ray tube) and LCD (Liquid Crystal Display, liquid crystal display). Among them, white organic light-emitting diodes are surface light sources. Compared with LED point light sources, they can be manufactured into large-area, arbitrary-shaped flat light sources. Therefore, they are more suitable for liquid crystal display backlight and full-color OLED displays.

In full-color OLED displays, the three primary colors (Red, Green, and Blue) are equally important, but white light emission gets more attention because any conceivable color range can be obtained by filtering the white light. For example, an OLED device can contain compounds that emit red, green, and blue light to collectively produce white light. However, this also brings some problems at the same time, such as the efficiency of the device is lower than 1lm/W, a large driving voltage is required, and the service life is short.

In the prior art, considering the service life of WOLED, the color point of its light source is yellowish, and it is difficult to meet the color point requirements of standard TV displays (eg, 9000~10000K). One solution is to use a non-proportionally designed pixel aperture ratio to achieve a standard white point position, but the application of a customized mask will increase the cost. In addition, if a standard white point light source with a closer color point is directly used, the service life will be shortened.

In view of this, how to design a color filter structure for WOLED to effectively eliminate the above-mentioned defects, save costs, and prolong the service life of the light source is an urgent problem to be solved by relevant technical personnel in the industry.

Contents of the invention

Aiming at the above-mentioned defects in the use of WOLED light sources in the prior art, the present invention provides a color filter structure for WOLED and a manufacturing method thereof.

According to one aspect of the present invention, a color filter structure for a white organic light emitting diode is provided, including:

a glass substrate;

A black matrix pattern layer located above the glass substrate, the black matrix pattern layer comprising a plurality of black matrices distributed at intervals; and

A pixel layer, including a red sub-pixel, a green sub-pixel, a first blue sub-pixel and a second blue sub-pixel, wherein the red sub-pixel, the green sub-pixel, the first blue Each sub-pixel of the color sub-pixel and the second blue sub-pixel is arranged between adjacent black matrices,

Wherein, the film thickness of the second blue sub-pixel is smaller than the film thickness of the first blue sub-pixel.

Preferably, the color temperature of the white organic light emitting diode light source passing through the second blue sub-pixel is between 5500K~13000K.

Preferably, the color temperature of the white organic light emitting diode light source passing through the second blue sub-pixel is T2 and the color temperature of not passing through the second blue sub-pixel is T1, then T2 and T1 satisfy: T2-T1>2000K.

Preferably, the color filter structure further includes a protective layer (OC, Over Coat), located above the pixel layer, and used to fill up the pixel layer.

According to another aspect of the present invention, a method for manufacturing a color filter structure for a white organic light emitting diode is provided, comprising the following steps:

providing a glass substrate;

forming a black matrix pattern layer above the glass substrate, wherein the black matrix pattern layer includes a plurality of black matrices distributed at intervals;

forming a red sub-pixel, a green sub-pixel and a first blue sub-pixel between adjacent black matrices; and

forming a second blue sub-pixel between adjacent black matrices, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a A pixel layer, and the film thickness of the second blue sub-pixel is smaller than the film thickness of the first blue sub-pixel.

Preferably, the manufacturing method further includes: forming a protection layer above the pixel layer, so as to fill up the pixel layer.

Preferably, the color temperature of the white organic light emitting diode light source after passing through the second blue sub-pixel is between 5500K~13000K.

According to yet another aspect of the present invention, a method for manufacturing a color filter structure for a white organic light emitting diode is provided, comprising the following steps:

providing a glass substrate;

forming a black matrix pattern layer above the glass substrate, wherein the black matrix pattern layer includes a plurality of black matrices distributed at intervals;

forming a red sub-pixel and a green sub-pixel, the red sub-pixel and the green sub-pixel are both located between adjacent black matrices;

coating a blue resist layer on the red sub-pixel and the green sub-pixel;

A first blue sub-pixel and a second blue sub-pixel are formed using a half tone process, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the The second blue sub-pixel constitutes a pixel layer, and the film thickness of the second blue sub-pixel is smaller than the film thickness of the first blue sub-pixel.

Preferably, the manufacturing method further includes: forming a protective layer above the pixel layer, so as to fill up the pixel layer.

Preferably, the color temperature of the white organic light emitting diode light source after passing through the second blue sub-pixel is between 5500K~13000K.

Using the color filter structure for WOLED and its manufacturing method of the present invention, the RGBB' structure of red sub-pixel, green sub-pixel, first blue sub-pixel and second blue sub-pixel is adopted in the pixel layer, by Since the film thickness of the second blue sub-pixel is smaller than the film thickness of the first blue sub-pixel, the light source passes through the second blue sub-pixel to modify the spectral behavior, thereby achieving the required color temperature requirement of the display. In addition, the first blue sub-pixel and the second blue sub-pixel are made of color-resist materials of the same color, and only the thickness of the film is different, so that the cost of line replacement in the manufacturing process can be saved.

Description of drawings

Readers will have a clearer understanding of various aspects of the present invention after reading the detailed description of the present invention with reference to the accompanying drawings. in,

FIG. 1 shows a schematic structural diagram of a color filter for a white organic light-emitting diode according to an embodiment of the present invention;

FIG. 2 shows a flow chart of a method for manufacturing a color filter structure for a white organic light emitting diode according to another embodiment of the present invention;

Fig. 3 shows the main step exploded schematic diagram of the color filter structure formed by the manufacturing method of Fig. 2;

Fig. 4 shows a flow chart of a method for manufacturing a color filter structure for a white organic light emitting diode according to yet another embodiment of the present invention; and

FIG. 5 shows an exploded schematic diagram of main steps of the color filter structure formed by the manufacturing method in FIG. 4 .

Detailed ways

In order to make the technical content disclosed in this application more detailed and complete, reference may be made to the drawings and the following various specific embodiments of the present invention, and the same symbols in the drawings represent the same or similar components. However, those skilled in the art should understand that the examples provided below are not intended to limit the scope of the present invention. In addition, the drawings are only for schematic illustration and are not drawn according to their original scale.

The specific implementation manners of various aspects of the present invention will be further described in detail below with reference to the accompanying drawings.

FIG. 1 shows a schematic structural diagram of a color filter for a white organic light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1 , the color filter structure of the present invention includes: a glass substrate 10 , a black matrix pattern layer and a pixel layer.

Specifically, the black matrix pattern layer is located above the glass substrate 10 . In FIG. 1 , the black matrix pattern layer includes a plurality of black matrices distributed at intervals, that is, black matrices 201 , 203 , 205 , 207 and 209 . The pixel layer includes a red sub-pixel (Red sub-pixel) 302 , a green sub-pixel (Green sub-pixel) 304 , a first blue sub-pixel (Blue sub-pixel) 306 and a second blue sub-pixel 308 . Wherein, each of the red sub-pixel 302 , the green sub-pixel 304 , the first blue sub-pixel 306 and the second blue sub-pixel 308 is disposed between adjacent black matrices. For example, the red sub-pixel 302 is located between the black matrix 201 and the black matrix 203, the green sub-pixel 304 is located between the black matrix 203 and the black matrix 205, and the first blue sub-pixel 306 is located between the black matrix 205 and the black matrix 207, And the second blue sub-pixel 308 is located between the black matrix 207 and the black matrix 209 .

It should be noted that the color filter structure of the present invention adopts a structure of RGBB' four sub-pixels, and the film thickness of the second blue sub-pixel 308 is set to be smaller than the film thickness of the first blue sub-pixel 306. In this way, when the white OLED passes through the second blue sub-pixel 308, the color temperature of the display image can be adjusted.

In a specific embodiment, the color temperature of the white OLED light source passing through the second blue sub-pixel 308 is between 5500K˜13000K. Preferably, if the color temperature of the white organic light emitting diode light source passing through the second blue sub-pixel 308 is defined as T2, and the color temperature of the light source not passing through the second blue sub-pixel 308 is defined as T1, then T2 and T1 satisfy: T2-T1>2000K .

In a specific embodiment, the color filter structure further includes a protective layer 40 (OC, Over Coat). The protection layer 40 is located above the pixel layer and is used to fill up the pixel layer. For example, the protective layer 40 not only fills the area on the left of the black matrix 201 and the red sub-pixel 302 , but also fills the area between the red sub-pixel 302 and the green sub-pixel 304 and above the black matrix 203 .

FIG. 2 shows a flow chart of a method for manufacturing a color filter structure for a white organic light emitting diode according to another embodiment of the present invention. FIG. 3 shows an exploded schematic diagram of main steps of the color filter structure formed by the manufacturing method in FIG. 2 .

Referring to FIG. 2 , in the manufacturing method, firstly, a glass substrate is provided (step S101 ). Then, a black matrix pattern layer is formed on the glass substrate, wherein the black matrix pattern layer includes a plurality of black matrices distributed at intervals (step S103 ). Next, a red sub-pixel, a green sub-pixel and a first blue sub-pixel are formed between adjacent black matrices (step S105 ). Finally, a second blue sub-pixel is formed between adjacent black matrices, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the second The film thickness of the blue sub-pixel is smaller than the film thickness of the first blue sub-pixel (step S107 ).

Referring to FIG. 2 and FIG. 3 , in the manufacturing method of the color filter structure, a glass substrate 10 is provided first. Then, a black matrix pattern layer is formed on the glass substrate 10, the black matrix pattern layer is composed of a plurality of black matrices distributed at intervals, such as black matrices 201, 203, 205, 207 and 209, as shown in FIG. 3(a) Show. Next, a red sub-pixel 302 , a green sub-pixel 304 and a first blue sub-pixel 306 are formed between adjacent black matrices. In more detail, the red sub-pixel 302 is formed between the black matrix 201 and the black matrix 203, the green sub-pixel 304 is formed between the black matrix 203 and the black matrix 205, and the first blue sub-pixel 306 is formed between the black matrix 205 and the black matrix 205. Between black matrix 207. Finally, a second blue sub-pixel 308 is formed between the adjacent black matrix 207 and black matrix 209, wherein the red sub-pixel 302, the green sub-pixel 304, the first blue sub-pixel 306 and the second blue sub-pixel The pixels 308 constitute a pixel layer, and the film thickness of the second blue sub-pixel 308 is smaller than the film thickness of the first blue sub-pixel 306 , as shown in FIG. 3( b ).

In a specific embodiment, the manufacturing method further includes: forming a protective layer 40 above the pixel layer, so as to fill up the pixel layer, as shown in FIG. 3( c ).

FIG. 4 shows a flow chart of a method for manufacturing a color filter structure for a white organic light emitting diode according to yet another embodiment of the present invention. FIG. 5 shows an exploded schematic diagram of main steps of the color filter structure formed by the manufacturing method in FIG. 4 .

Referring to FIG. 4 , in the manufacturing method, first, a glass substrate is provided (step S201 ). Then, a black matrix pattern layer is formed on the glass substrate, and the black matrix pattern layer includes a plurality of black matrices distributed at intervals (step S203 ). Next, a red sub-pixel and a green sub-pixel are formed between adjacent black matrices (step S205 ). Next, a blue color resist layer is coated on the red sub-pixel and the green sub-pixel (step S207 ). Finally, a first blue sub-pixel and a second blue sub-pixel are formed by using a half tone process, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel The pixels constitute a pixel layer, and the film thickness of the second blue sub-pixel is smaller than the film thickness of the first blue sub-pixel (step S209 ).

Referring to FIG. 4 and FIG. 5 , in the manufacturing method of the color filter structure, a glass substrate 10 is provided first. Then, a black matrix pattern layer is formed on the glass substrate 10 , the black matrix pattern layer is composed of a plurality of black matrices distributed at intervals, such as black matrices 201 , 203 , 205 , 207 and 209 . Next, a red sub-pixel 302 and a green sub-pixel 304 are formed between adjacent black matrices. Specifically, the red sub-pixel 302 is formed between the black matrix 201 and the black matrix 203 , and the green sub-pixel 304 is formed between the black matrix 203 and the black matrix 205 . Next, a blue color resist layer 50 is coated on the red sub-pixel 302 and the green sub-pixel 304 , as shown in FIG. 5( a ). Finally, the blue color resist layer 50 is processed by a half tone process to form a first blue sub-pixel 306 and a second blue sub-pixel 310 , as shown in FIG. 5( b ). Here, the red sub-pixel 302, the green sub-pixel 304, the first blue sub-pixel 306 and the second blue sub-pixel 310 constitute a pixel layer, and the film thickness of the second blue sub-pixel 310 is smaller than that of the first blue sub-pixel. Film thickness of pixel 306 .

In a specific embodiment, the manufacturing method further includes: forming a protective layer 40 above the pixel layer, so as to fill up the pixel layer, as shown in FIG. 5( c ).

Using the color filter structure for WOLED and its manufacturing method of the present invention, the RGBB' structure of red sub-pixel, green sub-pixel, first blue sub-pixel and second blue sub-pixel is adopted in the pixel layer, by Since the film thickness of the second blue sub-pixel is smaller than the film thickness of the first blue sub-pixel, the light source passes through the second blue sub-pixel to modify the spectral behavior, thereby achieving the required color temperature requirement of the display. In addition, the first blue sub-pixel and the second blue sub-pixel are made of color-resist materials of the same color, and only the thickness of the film is different, so that the cost of line replacement in the manufacturing process can be saved.

Hereinbefore, specific embodiments of the present invention have been described with reference to the accompanying drawings. However, those skilled in the art can understand that without departing from the spirit and scope of the present invention, various changes and substitutions can be made to the specific embodiments of the present invention. These changes and substitutions all fall within the scope defined by the claims of the present invention.

Claims (10)

1. A color filter structure for White Organic Light Emitting Diode (WOLED), the color filter structure comprising:

a glass substrate;

the black matrix pattern layer is positioned above the glass substrate and comprises a plurality of black matrixes distributed at intervals; and

a pixel layer including a red sub-pixel, a green sub-pixel, a first blue sub-pixel, and a second blue sub-pixel, wherein each of the red sub-pixel, the green sub-pixel, the first blue sub-pixel, and the second blue sub-pixel is disposed between adjacent black matrixes,

wherein the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.

2. The color filter structure of claim 1, wherein the color temperature of the white OLED light source after passing through the second blue sub-pixel is between 5500K and 13000K.

3. The color filter structure of claim 2, wherein the color temperature of the white OLED light source passing through the second blue sub-pixel is T2 and the color temperature of the white OLED light source not passing through the second blue sub-pixel is T1, then T2 and T1 satisfy:

T2-T1>2000K。

4. the color filter structure of claim 1, further comprising a protection layer (OC, Over Coat) Over the pixel layer for filling the pixel layer.

5. A method for manufacturing a color filter structure for a White Organic Light Emitting Diode (WOLED), the method comprising:

providing a glass substrate;

forming a black matrix pattern layer above the glass substrate, wherein the black matrix pattern layer comprises a plurality of black matrixes distributed at intervals;

forming a red sub-pixel, a green sub-pixel and a first blue sub-pixel between the adjacent black matrixes; and

and forming a second blue sub-pixel between the adjacent black matrixes, wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.

6. The manufacturing method according to claim 5, characterized by further comprising:

and forming a protective layer above the pixel layer so as to fill and level up the pixel layer.

7. The manufacturing method of claim 5, wherein the color temperature of the white OLED light source after passing through the second blue sub-pixel is between 5500K and 13000K.

8. A method for manufacturing a color filter structure for a White Organic Light Emitting Diode (WOLED), the method comprising:

providing a glass substrate;

forming a black matrix pattern layer above the glass substrate, wherein the black matrix pattern layer comprises a plurality of black matrixes distributed at intervals;

forming a red sub-pixel and a green sub-pixel, wherein the red sub-pixel and the green sub-pixel are positioned between adjacent black matrixes;

coating a blue resistance layer above the red sub-pixel and the green sub-pixel;

a first blue sub-pixel and a second blue sub-pixel are formed by adopting a half dimming process (half tone), wherein the red sub-pixel, the green sub-pixel, the first blue sub-pixel and the second blue sub-pixel form a pixel layer, and the film thickness of the second blue sub-pixel is smaller than that of the first blue sub-pixel.

9. The manufacturing method according to claim 8, characterized by further comprising:

and forming a protective layer above the pixel layer so as to fill and level up the pixel layer.

10. The manufacturing method of claim 8, wherein the color temperature of the white OLED light source after passing through the second blue sub-pixel is between 5500K and 13000K.

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