CN102967979B - Active matrix display device - Google Patents
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Abstract
An active matrix display device comprises a backlight module and a pixel unit layer which is arranged on the backlight module, wherein the pixel unit layer comprises a TFT (Thin Film Transistor) module and an electrochromic module; each pixel unit comprises a TFT (Thin Film Transistor) and an electrochromic device; the electrochromic device comprises an anode, a cathode as well as an electrochromic material layer and a solid electrolyte layer, wherein the electrochromic material layer and the solid electrolyte layer are arranged between the anode and the cathode; a drain of the TFT is connected with the anode of the electrochromic device through a connecting hole; and the TFT is used for controlling the electrochromic device to change color and/or transmission rate through voltage; simple structure and simple making process are achieved; the electrochromic material is an organic electrochromic material with high response speed as well as vibrant and rich colors; moreover, a light source selecting range of the backlight module is large and flexible display of the device can be achieved.
Description
Technical field
The present invention relates to electronic applications, particularly a kind of active matrix display device with electrochromic device.
Background technology
In prior art, full-color displaying scheme can be divided into active illuminating and passive luminescence, the liquid crystal display being represented as now technology maturation of passive luminescence, active illuminating is then active driving organic luminescent device (English full name is Active Matrix organic lighting emitting display, is called for short AMOLED) and Field Emission Display.
In OLED true color method, RGB(three primary colours are Red, Green, Blue, are called for short RGB) pixel juxtaposition method and colored filter (English full name is color filter, referred to as CF) method develop two kinds of the most ripe methods at present.Rgb pixel juxtaposition method needs high-precision metal mask to realize high resolving power, cost is very high, and be difficult to realize large-area even preparation, therefore the colored filter method of the full-color display in similar liquid crystal panel field obtains the attention of industry, namely white light OLED plays the effect of backlight and liquid crystal molecule in liquid crystal panel as backlight, in addition optical filter, with real RGB sub-pixel, can be good at solving problem prepared by resolution and large area so more above.
But for AMOLED, utilize thin film transistor (TFT) (English full name is thin filmtransistor, referred to as TFT) capacitance stores of arranging in pairs or groups signal shows to the intensity gray scale of control OLED, in order to reach the object of determining electric current and driving, each pixel at least needs two TFT and memory capacitance to form.Luminous by TFT Direct driver OLED, must current drive mode be adopted, very high to the performance requirement of TFT.The non-crystalline silicon tft extensively adopted in field of liquid crystals cannot be applied to AMOLED, and the low temperature polycrystalline silicon TFT needing technique more complicated or oxide semiconductor TFT, add cost and technical difficulty so undoubtedly, thus add the cost of OLED true color.
Electrochromic device comprises transparency carrier, transparency electrode, electrochromic material layer and dielectric substrate, when devices function, certain voltage is added between two transparency electrodes, the change of stable, reversible optical properties (as reflectivity, transmitance, absorptivity etc.) is there is in electrochromic material under voltage effect, show as the reversible change of color and transparency in appearance, the effect of optical filter can be played.
Chinese patent CN101859037A discloses a kind of liquid crystal indicator, comprise backlight module and pixel cell, each pixel cell comprises again liquid crystal and electrochromism, controlled the color corresponding to vision signal of described electrochromism generation and image pixel by the first control submodule, control submodule by second and control the rotation of described liquid crystal thus the gray-scale intensity of control light.This device architecture not only needs two circuit modules to control brightness and color respectively, but also needs filling liquid crystal, controls brightness by the rotation of liquid crystal, and Structure and energy is complicated; And Liquid Crystal Module cannot realize Flexible Displays, do not meet the development trend of modern display technology.
Summary of the invention
For this reason, to be solved by this invention is that in existing display technique, backlight module adds the device architecture of filter sheet structure and the problem of complex process, provides a kind of novel active matrix display device.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of active matrix display device, comprise backlight module and the pixel unit layer be arranged on backlight module, described pixel unit layer comprises TFT module and electrochromic module, and each pixel cell comprises TFT and electrochromic device; Described TFT is connected by the connecting hole be arranged in described TFT drain electrode with the anode of described electrochromic device, and described TFT changes color and/or transmissivity by electrochromic device described in Control of Voltage; TFT module in described pixel unit layer is arranged near described backlight module.
Described pixel unit layer is provided with colored filter.
Described backlight is organic electroluminescence device (OLED) and/or luminescent electrochemical cell (LEC).
Described backlight is light emitting diode (LED) and/or Cold Cathode Fluorescent fluorescent tube (CCFL).
Described backlight module also comprises light guide plate.
Described TFT is non-crystalline silicon tft, low temperature polycrystalline silicon TFT, organic tft or oxide TFT.
Described electrochromic device comprises anode, negative electrode and the electrochromic material layer that is arranged between described anode and negative electrode and solid-state electrolyte layer.
Described electrochromic material layer is organic electrochromic material layer.
Described electrochromic material layer comprises anode development polymer layer and negative electrode development polymer layer, and described solid-state electrolyte layer is arranged between described anode development polymer layer and negative electrode development polymer layer.
Described anode development polymer is different with negative electrode development polymer, is selected from conjugated polymer polymkeric substance separately, and/or the potpourri of multiple conjugated polymer polymkeric substance or multipolymer.
Described conjugated polymer polymkeric substance is polypyrrole (PPy) and derivant, polythiophene (PTh) and derivant thereof or polyaniline (PANI) and derivant thereof.
Described solid-state electrolyte layer is the high-molecular gel being mixed with alkaline metal or earth alkali metal soluble-salt.
Described solid-state electrolyte layer be mixed with lithium salts polymethylmethacrylate, be mixed with lithium salts poly-(2-acrylamide-2-methylpro panesulfonic acid) gel, be mixed with LiClO
4thermoplasticity chloromethyloxirane and oxirane multipolymer in one or more.
Described electrochromic material layer is by the method preparation of electrochemical polymerization, vapour phase polymerization, inkjet printing or spray to cast.
The thickness of described anode development polymer layer and described negative electrode development polymer layer is 100-5000nm.
The thickness 300-500nm of described anode development polymer layer and described negative electrode development polymer layer.
Described solid-state electrolyte layer is by the method preparation of serigraphy, spin coating or inkjet printing.
The thickness of described solid-state electrolyte layer is 100-10000nm.
Described solid-state electrolyte layer is 300-600nm.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of active matrix display device, comprise backlight module and pixel unit layer, described pixel unit layer comprises TFT module and electrochromic module, each pixel cell comprises TFT and electrochromic device, described TFT is used to change color and/or transmissivity by electrochromic device described in Control of Voltage, without the need to using liquid crystal to control gray-scale intensity, structure and manufacture craft simple.
2, described TFT can the non-crystalline silicon tft of cheap, the technical maturity of use cost, not only can reduce costs, can also reduce technology difficulty.
If 3 select OLED as backlight, can selecting without the need to introducing high-precision metal mask, the simple OLED illuminating device of technique, not only can realize large scale display, and making active matrix display device of the present invention more frivolous, technique is simpler.
4, select flexible OLED as backlight, the Flexible Displays of device can be realized; For the pointolites such as LED and CCFL or line source, there is the problem of non-uniform light, such light source just needs to arrange light guide plate in backlight module as backlight, electric light source or line source are converted to luminous uniform area source, and OLED is as area source, without the need to arranging light guide plate in backlight module, technique is more simple, but also effectively reduces cost of manufacture.
5, described electrochromic material is organic electrochromic material, relative to fast response time inorganic electrochromic material, in bright gay color abundant.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the modular structure schematic diagram of active matrix display device of the present invention;
Fig. 2 is the structural representation of the embodiment of the present invention 1;
Fig. 3 is the structural representation of the embodiment of the present invention 2;
Fig. 4 is the structural representation of active matrix liquid crystal display device in comparative example 1;
Fig. 5 is the structural representation of Active Matrix OLED Displays Using in comparative example 2.
In figure, Reference numeral is expressed as: 1-backlight module, 2-TFT module, 3-electrochromic module, 4-chromatic color filter, 101-substrate, 102-OLED anode, 103-functional layer, 104-OLED negative electrode, 105-OLED encapsulated layer, 106-the 2nd TFT, 201-the one TFT, 202-contact hole, the anode of 203-electrochromic device, 204-insulation and planarization layer, 301-positive polarity development polymer layer, 302-cathodic development polymer layer, 303-solid-state electrolyte layer, the negative electrode of 304-electrochromic device, 305-passivation layer, 306-planarization layer, the envelope of 307-electrochromic device turns layer, 401-RGB region, the black matrix of 402-, 501-first polaroid, 502-second polaroid, 503-lower-glass, 504-show electrode, 505-memory capacitance, 506-liquid crystal, 507-supports, 508-glue frame, 509-alignment film, 510-public electrode, 511-diaphragm, the upper glass of 512-.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Fig. 1 is the modular structure schematic diagram of active matrix display device of the present invention.The light source that backlight wherein in backlight module 1 can be organic electroluminescence device (OLED), light emitting diode (LED), luminescent electrochemical cell (LEC) or Cold Cathode Fluorescent fluorescent tube (CCFL) etc. can send white light, OLED has frivolous, power saving, antidetonation, can realize the advantages such as Flexible Displays, and OLED is area source, do not need to arrange light guide plate in backlight; In OLED, the Structure and energy of illuminating device is more simple, and cost is lower, thus here preferably white light OLED illuminating device as backlight.If use pointolite or line source, in order to make backlight module 1 evenly luminous, in backlight module 1, also should light guide plate be set.TFT module 2 is used for driving electrochromic module the 3, one TFT201 can be conventional non-crystalline silicon tft, low temperature polycrystalline silicon TFT, organic tft (OTFT) and oxide TFT etc., and its function is for electrochromic module 3 provides voltage driven.Electrochromic device in this pixel cell of the Control of Voltage that each pixel cell is applied by the transistor in TFT module is to control shown color and/or transmissivity.Described electrochromic device is made up of the anode 203 of electrochromic device, the negative electrode 304 of electrochromic device and the positive polarity development polymer layer 301 between them, cathodic development polymer layer 302, solid-state electrolyte layer 303, when change in voltage, its color and/or transmitance change, in order to filter the white light sent from white light backlight, realize the display of shades of colour and gray scale.
Different according to the selection of electrochromic material, the design of this module can be, but not limited to following two kinds of situations:
1. adopt the electrochromic material of visible light wave range transmissivity overall variation with the change of voltage.Now this module can be divided into two submodules: traditional full-color optical filter and electrochromic module, regulate gray scale by electrochromic material, and pixel color is still regulated by traditional full-color optical filter.
2. adopt the electrochromic material being got final product adjustable colors and gray scale by regulation voltage, and do not need extra RGB optical filter.
For above-mentioned two situations, embodiment of the present invention is described further in detail.
In following embodiment, poly-[two (3-, 4-ethene dioxythiophene)-N-methyl carbazole], poly-(N-sulphur propoxyl group-trimethylene dioxypyrrole), be mixed with the polymethylmethacrylate (PMMA), poly-(5 of lithium salts, 5-bis-methylene dioxy thiophene) (being abbreviated as PBiEDOT), poly-(two-two methylene dioxy thiophene-N-methyl carbazole) (being abbreviated as PBEDOT-NMeCz) and PBiEDOT and PBEDOT-NMeCz multipolymer preparation method see document: the 16th volumes in 2004 of " chemistry of materials(materials chemistry) ", 4401-4412 page; PAH (PAH) preparation method is see document: the 27th volumes in 2006 of " Displays(display device) ", 2-18 page.
The conventional color filter that optical filter and liquid crystal industry adopt, purchased from Sumitomo Chemical.
Embodiment 1
The present embodiment is the preparation embodiment of active matrix display device A, and as shown in Figure 2, described active matrix display device is made up of following four parts: backlight module 1, TFT module 2, electrochromic module 3, traditional optical filter 4.
Wherein, backlight is white light OLED illuminating device, can also be the white light source of any plane, as LED, LEC, CCFL etc., all can realize object of the present invention, belong to protection scope of the present invention.If use pointolite or line source, in order to make backlight module 1 evenly luminous, in backlight module 1, also should light guide plate be set.White light OLED illuminating device comprises hole injection layer, hole transmission layer by glass or flexible base, board 101, OLED anode 102, functional layer 103(functional layer 103, luminescent layer, electron transfer layer, one or more combinations in electron injecting layer etc.), OLED negative electrode 104 and encapsulated layer 105 form, packaged type can be glass cover or thin-film package.Backlight module 1 is connected with TFT module 2 by the mode such as bonding, laminating.
TFT module 2 is prepared in the thin film transistor (TFT) on glass or transparent flexible substrate, can be non-crystalline silicon tft, low temperature polycrystalline silicon TFT, high temperature polysilicon, organic tft or oxide TFT, adopt the amorphous silicon film transistor of technology maturation in the present embodiment.In figure, the drain electrode of a TFT201 is connected with the anode 203 of electrochromic device by contact hole 202.One deck insulation and planarization layer 204 are prepared in other regions on the backboard of a TFT201 except the anode 203 of electrochromic device, cover other regions except the anode 203 of electrochromic device, in order to define pixel cell.
In pixel cell, electrochromic device is by anode 203, the negative electrode 304 of electrochromic device, the positive polarity development polymer layer 301 of electrochromic device, and cathodic development polymer layer 302 and solid-state electrolyte layer 303 form.In the present embodiment; the anode 203 of electrochromic device and the negative electrode 304 of electrochromic device are transparent indium tin oxide (ITO) electrode; positive polarity development polymer layer 301 and cathodic development polymer layer 302 are formed by the method for electrochemical polymerization; but can also be formed by modes such as vapour phase polymerization, inkjet printing, spray to casts; can reach object of the present invention equally, belong to protection scope of the present invention.The material of the present embodiment middle-jiao yang, function of the spleen and stomach polarity development polymer layer 301 is poly-[two (3-, 4-ethene dioxythiophene)-N-methyl carbazole], the material of corresponding cathodic development polymer layer 302 is PAH (PAH), and the material of corresponding solid-state electrolyte layer 303 is the polymethylmethacrylates (PMMA) being mixed with lithium salts.Positive polarity development polymer layer 301 material therefor can also be poly-(3; 4 ethylenedioxy thiophenes): poly-p styrene sulfonic acid (PEDOT:PSS) etc.; the material of corresponding cathodic development polymer layer 302 can also be the cetyl derivant of PEDOT; PAH (PAH) etc.; corresponding solid-state electrolyte layer 303 material can also be poly-(2-acrylamide-2-methylpro panesulfonic acid) gel etc.; all can realize object of the present invention, belong to protection scope of the present invention.The present embodiment middle-jiao yang, function of the spleen and stomach polarity development polymer layer 301 and cathodic development polymer layer 302 thickness are 500nm, and solid-state electrolyte layer 303 thickness is 600nm.
In other embodiments of the invention, positive polarity development polymer layer 301 and cathodic development polymer layer 302 first alternating deposit on the anode 203 of electrochromic device; And then after making solid-state electrolyte layer 303, again according to the anode 203 Shangyang polarity development polymer layer 301 of electrochromic device and the sedimentary sequence of cathodic development polymer layer 302, alternating deposit positive polarity development polymer layer 301 and cathodic development polymer layer 302 symmetrically; Finally, then with sputtering or spray heating decomposition the negative electrode 304 of electrochromic device is prepared.
Afterwards, the negative electrode 304 of electrochromic device covers passivation layer 305 and planarization layer 306, then carries out execution encapsulated layer 307, the mode of encapsulation can be add a cover encapsulation, also can be thin-film package.Last colored filter 4 of fitting on encapsulated layer 307, make RGB region 401 aim at the pixel cell region of electrochromic device definition, black matrix 402 covers other regions.The selection of optical filter and applying method adopt the conventional method of this area.
During devices function, thin film transistor (TFT) controls electrochromic device negative and positive voltage across poles, it is made to change between 0-2V, the transmissivity of electrochromic device can decline along with the increase of voltage, bring the change of GTG, namely the white light of different gray-scale intensity can produce the redness of different brightness, green and blue through colored filter, can obtain a colored color-point projection on display pannel after three kinds of different colours mix.Compared with full-color liquid crystal display device, described active matrix display device only need utilize described electrochromic device just can reach the object of GTG control, and described electrochromic device preparation technology is simple, only need the deposition of carrying out multilayer organic material just can make, and described active matrix display device can also make flexible display device; Compared with full-color AMOLED, the TFT of described active matrix display device without the need to adopting high-performance current to drive, technique is simple, with low cost.
Embodiment 2
The present embodiment is the preparation embodiment of active matrix display device B, and as shown in Figure 3, described active matrix display device is made up of following three parts: backlight module 1, TFT module 2, electrochromic module 3.
Wherein, the selection of backlight module 1 and TFT module 2 and preparation method are with embodiment 1, uniquely prepare the extremely low planarization resin of one deck transmissivity as black matrix 402 unlike other regions on the backboard of a TFT201 except the anode 203 of electrochromic device, cover other regions except the anode 203 of electrochromic device, in order to define electrochrome pixel unit, the simultaneously light leak of also blocking device exterior domain.
Electrochromic device is primarily of anode 203, the negative electrode 304 of electrochromic device, the positive polarity development polymer layer 301 of electrochromic device, and solid-state electrolyte layer 303 and cathodic development polymer layer 302 form.In the present embodiment, the anode 203 of electrochromic device and negative electrode 304 are transparent indium tin oxide (ITO) electrode, and select poly-(N-sulphur propoxyl group-trimethylene dioxypyrrole) as the material of positive polarity development polymer layer 301, its thickness is 300nm.This Material selec-tion is not only for this kind, and the organic electrochromic material of band gap Eg>2.8eV all can realize object of the present invention, belongs to protection scope of the present invention; Select poly-(5,5-bis-methylene dioxy thiophene) (being abbreviated as PBiEDOT) and the material of multipolymer as cathodic development polymer layer 302 gathering (two-two methylene dioxy thiophene-N-methyl carbazole) (being abbreviated as PBEDOT-NMeCz), its thickness is 300nm.Positive polarity development polymer layer 301 and cathodic development polymer layer 302 adopt the method for vapour phase polymerization to prepare, but can also be formed by modes such as vapour phase polymerization, inkjet printing, spray to casts, can reach object of the present invention equally, belong to protection scope of the present invention.R, G, B color is regulated by the ratio of copolymer p BiEDOT:PBEDOT-NMeCz in cathodic development polymer layer 302, and wherein blue pixel proportional range is 10:0-9:1, red pixel is 6:4-4:6, green pixel is 0.5:9.5-0:10.In the present embodiment, in blue pixel, the ratio of PBiEDOT:PBEDOT-NMeCz is for being 10:0, and in red pixel, the ratio of PBiEDOT:PBEDOT-NMeCz is 5:5, and in green pixel, the ratio of PBiEDOT:PBEDOT-NMeCz is 0:10.
The material of middle-jiao yang, function of the spleen and stomach polarity development polymer layer 301 of the present invention and cathodic development polymer layer 302 is also not only for this system; can also be one or more in poly-alkylene dioxy thiophene (PXDOT) and derivant, polyaniline (PANI), poly-(N-methylpyrrole), poly-(3 methyl thiophene), poly-alkylene dioxypyrrole (PXDOP) and derivant thereof; or according to the present situation in this field and known; various selection can be made; can reach object of the present invention equally, belong to protection scope of the present invention.
The thickness range of solid-state electrolyte layer 303 is 100-10000nm, its material is solid or gel-like electrolyte, can be, but not limited to adopt the polymethylmethacrylate (PMMA) being mixed with lithium salts, poly-(2-acrylamide-2-methylpro panesulfonic acid) gel, is mixed with LiClO
4thermoplasticity chloromethyloxirane and the multipolymer etc. of oxirane; the present embodiment preferably adopts the polymethylmethacrylate (PMMA) being mixed with lithium salts; thickness is 600nm; the mode of spin coating is adopted to prepare; prepared by the also available but mode such as serigraphy, inkjet printing that is not limited to; can realize object of the present invention equally, belong to protection scope of the present invention.Positive polarity development polymer layer 301 in described electrochromic device, the stacked order of solid-state electrolyte layer 303 and cathodic development polymer layer 302 and preparation technology are with embodiment 1, finally, then with sputtering or spray heating decomposition the negative electrode 304 of electrochromic device is prepared.
Afterwards, the negative electrode 304 of electrochromic device covers passivation layer 305 and planarization layer 306, then carries out execution encapsulated layer 307, the mode of encapsulation can be add a cover encapsulation, also can be thin-film package.
Embodiment 3
The present embodiment is the preparation embodiment of active matrix display device C, and described active matrix display device is made up of following two parts: backlight module 1 and electrochromic module 3.
Backlight module 1 comprises white light LED plane illuminating device and light guide plate, and embodiment is with known technology, and electrochromic module 3 is arranged on described LED planar lighting device, and embodiment is with the preparation method of electrochromic module 3 in embodiment 2.
Embodiment 4
The present embodiment is the preparation embodiment of active matrix display device D, and described active matrix display device is made up of following two parts: backlight module 1 and electrochromic module 3.
Backlight module 1 is white light LEC device, and embodiment is with known technology, and electrochromic module 3 is arranged on described white light LEC device, and embodiment is with the preparation method of electrochromic module 3 in embodiment 2.
Embodiment 5
The present embodiment is the preparation embodiment of active matrix display device E, and described active matrix display device is made up of following two parts: backlight module 1 and electrochromic module 3.
Backlight module 1 comprises white light Cold Cathode Fluorescent fluorescent tube (CCFL) and light guide plate, embodiment is with known technology, electrochromic module 3 is arranged on described white light Cold Cathode Fluorescent fluorescent tube (CCFL), and embodiment is with the preparation method of electrochromic module 3 in embodiment 2.
The development polymer of anode described in above-described embodiment is different with negative electrode development polymer, be selected from potpourri or the multipolymer of a kind of conjugated polymer polymkeric substance or several the type polymkeric substance separately, as polypyrrole (PPy) and derivant thereof, polythiophene (PTh) and derivant thereof (comprise the PTh derivant that alkoxy replaces, as Polyglycolic acid fibre etc.), polyaniline (PANI) and derivant etc. thereof, include but not limited to gather [two (3-, 4-ethene dioxythiophene)-N-methyl carbazole], poly-(3, 4 ethylenedioxy thiophenes): poly-p styrene sulfonic acid (PEDOT:PSS), poly-alkylene dioxy thiophene (PXDOT) and derivant thereof, poly-(N-sulphur propoxyl group-trimethylene dioxypyrrole), polyaniline (PANI), poly-(N-methylpyrrole), poly-(3 methyl thiophene), gather one or more in alkylene dioxypyrrole (PXDOP) and derivant thereof, all can realize object of the present invention, belong to protection scope of the present invention.
Described solid-state electrolyte layer is a kind of high-molecular gel being mixed with alkaline metal or earth alkali metal soluble-salt, as be mixed with lithium salts polymethylmethacrylate, poly-(2-acrylamide-2-methylpro panesulfonic acid) gel, be mixed with LiClO
4thermoplasticity chloromethyloxirane and oxirane multipolymer in one or more, all can realize object of the present invention, belong to protection scope of the present invention.
In order to backlight module adds the performance of the device architecture of filter sheet structure in active matrix display device more of the present invention further and prior art, devise following comparative example.
Comparative example 1
This comparative example is the preparation embodiment of active matrix liquid crystal display device F, as shown in Figure 4, comprise backlight module 1 and display module, the preparation of backlight module 1 is with embodiment 1, the display module be arranged on backlight module 1 comprises the first polaroid 501 and lower-glass 503 that set gradually, be arranged on a TFT201, memory capacitance 505, show electrode 504, the two-layer alignment film 509 on lower-glass 503, also be provided with liquid crystal 506 between two-layer alignment film 509 and support 507, and being encapsulated by glue frame 508; Alignment film 509 is disposed with public electrode 510, diaphragm 511, chromatic color filter 401 and black matrix 402, lower-glass 512 and the second polaroid 502, the same known preparation method of concrete technology step.
Comparative example 2
This comparative example is that Activematric OLED full-color display part G(backlight module adds filter sheet structure) preparation embodiment, as shown in Figure 5.Be provided with the 2nd TFT106 on the substrate 101, the 2nd TFT106 be provided with and be disposed with OLED anode 102, functional layer 103, negative electrode 104, diaphragm 511, OLED encapsulated layer 105; The drain electrode of the 2nd TFT106 is connected with the anode 102 of OLED by contact hole; On 2nd TFT106, OLED anode 102 uncovered area is also provided with the RGB region 401 insulation and planarization layer 204, OLED encapsulated layer 105 being provided with black matrix 402 and color filter.The same known preparation method of concrete technology step
Wherein, substrate 101 is glass or flexible base, board; Because OLED is current driving apparatus, so require very high to the carrier concentration of the semiconductor layer of TFT, therefore in this comparative example, the 2nd TFT106 must adopt low temperature polycrystalline silicon TFT or oxide TFT, and the complex process of these two kinds of TFT, manufacture difficulty is large, and cost is high; Functional layer 103 comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, one or more combinations in electron injecting layer etc.; OLED anode 102, functional layer 103 and OLED negative electrode 104 form OLED together, this OLED must define its figure by meticulous mask, the alignment system of mobile mask or substrate requires to have high degree of accuracy, and mask open size easily produces error, easy generation is blocked and is polluted, therefore the preparation of described mask and maintenance cost very high, technical difficulty is very large.
By the brightness of spectrophotometer test component; By the response time of response time tester test component; By the power of power consumption instrument test component; By spectrophotometer test component light-dark ratio, thus calculate contrast.
The device performance of above-described embodiment and comparative example is as shown in the table:
| Brightness (cd/m 2) | Response time (ms) | Power (W) | Contrast |
| Device A | 200 | 90 | 1.5 | 1000:1 |
| Device B | 250 | 50 | 1.5 | 2000:1 |
| Device C | 200 | 50 | 3 | 2000:1 |
| Device D | 90 | 50 | 1 | 2000:1 |
| Device E | 100 | 50 | 4 | 2000:1 |
| Device F | 200 | 20 | 3 | 5000:1 |
| Device G | 400 | 0.01 | 2.5 | 10000:1 |
Visible, when brightness, response time and contrast reach LCD level substantially, device power consumption provided by the present invention has remarkable reduction.In addition device preparation technology provided by the present invention is simple, can realize Flexible Displays, and cost comparatively conventional white light OLED+ optical filter scheme have and significantly reduce.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (19)
1. an active matrix display device, comprise backlight module and the pixel unit layer be arranged on backlight module, it is characterized in that: described pixel unit layer comprises TFT module and electrochromic module, each pixel cell comprises TFT and electrochromic device; Described TFT is connected by the connecting hole be arranged in described TFT drain electrode with the anode of described electrochromic device, and described TFT changes color and/or transmissivity by electrochromic device described in Control of Voltage; TFT module in described pixel unit layer is arranged near described backlight module.
2. active matrix display device according to claim 1, is characterized in that: described pixel unit layer is provided with colored filter.
3. active matrix display device according to claim 2, is characterized in that: described backlight is organic electroluminescence device (OLED) and/or luminescent electrochemical cell (LEC).
4. active matrix display device according to claim 2, is characterized in that: described backlight is light emitting diode (LED) and/or Cold Cathode Fluorescent fluorescent tube (CCFL).
5. active matrix display device according to claim 4, is characterized in that: described backlight module also comprises light guide plate.
6. active matrix display device according to claim 1, is characterized in that: described TFT is non-crystalline silicon tft, low temperature polycrystalline silicon TFT, organic tft or oxide TFT.
7. according to the arbitrary described active matrix display device of claim 1-6, it is characterized in that: described electrochromic device comprises anode, negative electrode and the electrochromic material layer that is arranged between described anode and negative electrode and solid-state electrolyte layer.
8. active matrix display device according to claim 7, is characterized in that: described electrochromic material layer is organic electrochromic material layer.
9. active matrix display device according to claim 8, it is characterized in that: described electrochromic material layer comprises anode development polymer layer and negative electrode development polymer layer, and described solid-state electrolyte layer is arranged between described anode development polymer layer and negative electrode development polymer layer.
10. active matrix display device according to claim 9, is characterized in that: described anode development polymer is different with negative electrode development polymer, is selected from conjugated polymer polymkeric substance separately, and/or the potpourri of multiple conjugated polymer polymkeric substance or multipolymer.
11. active matrix display device according to claim 10, is characterized in that: described conjugated polymer polymkeric substance is polypyrrole (PPy) and derivant, polythiophene (PTh) and derivant thereof or polyaniline (PANI) and derivant thereof.
12., according to the arbitrary described active matrix display device of claim 9-11, is characterized in that: described solid-state electrolyte layer is the high-molecular gel being mixed with alkaline metal or earth alkali metal soluble-salt.
13. active matrix display device according to claim 12, is characterized in that: described solid-state electrolyte layer be mixed with lithium salts polymethylmethacrylate, be mixed with lithium salts poly-(2-acrylamide-2-methylpro panesulfonic acid) gel, be mixed with LiClO
4thermoplasticity chloromethyloxirane and oxirane multipolymer in one or more.
14., according to the arbitrary described active matrix display device of claim 9-11, is characterized in that: described electrochromic material layer is by the method preparation of electrochemical polymerization, vapour phase polymerization, inkjet printing or spray to cast.
15. active matrix display device according to claim 14, is characterized in that: the thickness of described anode development polymer layer and described negative electrode development polymer layer is 100-5000nm.
16. active matrix display device according to claim 15, is characterized in that: the thickness 300-500nm of described anode development polymer layer and described negative electrode development polymer layer.
17. active matrix display device according to claim 12, is characterized in that: described solid-state electrolyte layer is by the method preparation of serigraphy, spin coating or inkjet printing.
18. active matrix display device according to claim 17, is characterized in that: the thickness of described solid-state electrolyte layer is 100-10000nm.
19. active matrix display device according to claim 18, is characterized in that: described solid-state electrolyte layer is 300-600nm.
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| CN105097886A (en) * | 2015-09-07 | 2015-11-25 | 深圳市华星光电技术有限公司 | Plane display panel and plane display |
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| CN107507854A (en) * | 2017-09-13 | 2017-12-22 | 昆山维信诺科技有限公司 | Oled display panel |
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