CN102965634A - Method for preparing beryllium-copper alloy sheet by adopting continuous magnetron sputtering physical-vapor deposition method - Google Patents
Method for preparing beryllium-copper alloy sheet by adopting continuous magnetron sputtering physical-vapor deposition method Download PDFInfo
- Publication number
- CN102965634A CN102965634A CN2012105513353A CN201210551335A CN102965634A CN 102965634 A CN102965634 A CN 102965634A CN 2012105513353 A CN2012105513353 A CN 2012105513353A CN 201210551335 A CN201210551335 A CN 201210551335A CN 102965634 A CN102965634 A CN 102965634A
- Authority
- CN
- China
- Prior art keywords
- beryllium
- magnetron sputtering
- pure
- target
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a method for preparing a beryllium-copper alloy sheet, and particularly relates to a method for preparing the beryllium-copper alloy sheet by adopting a continuous magnetron sputtering physical-vapor deposition method. The method for preparing the beryllium-copper alloy sheet by adopting the continuous magnetron sputtering physical-vapor deposition method comprises the following steps: depositing a pure Be or Be-rich membrane with good combination on the single surface or both surfaces of a pure copper strip by taking a pure Be metal target or a beryllium-copper alloy target with high beryllium content as a cathode and the pure copper strip as an anode and adopting the magnetron sputtering physical-vapor deposition method; and then carrying out diffusion treatment at high temperature to enable Be atoms to be diffused inwards and permeated into a pure copper base body till the content of Be contained in the pure copper strip reaches 1-3 percent by weight so as to obtain a Cu-Be alloy strip, which is excellent in mechanical property and conductive property, with the Be content of 1-3 percent by weight. The method disclosed by the invention has the advantages of simplicity, easiness for operation, high work efficiency, energy-saving and environment-friendly preparation process, controllable quality and great suitability for industrialized application.
Description
Technical field
The present invention relates to a kind of method for preparing the beryllium copper thin plate, more particularly, refer to that one adopts the continuous magnetron sputtering physical vaporous deposition to prepare the method for high performance Cu-1～3wt.%Be latten.
Background technology
Beryllium copper is a kind of typical precipitation strength type alloy, have snappiness, high strength, high conductivity, solidity to corrosion, antifatigue, elastic lag little, nonmagnetic, do not produce the series of advantages such as spark when impacting, be widely used in having broad application prospects in space flight, aviation, electronics, communication, machinery, oil, chemical industry, automobile and the household electrical appliances industry.
At present, the beryllium copper Strip all is to adopt the rolling preparation basically, mainly comprises direct chill casting ingot+milling epidermis+heating+roughing+quenching+reroll+quenching+pickling+scrub+operations such as finish rolling.Because the beryllium copper ingot casting trends towards the secondary segregation when crystallization, namely beryllium element causes ingot casting different aspects plasticity to have very big-difference to the enrichment of ingot casting top layer, is easy to form crackle during hot rolling.So general ingot casting size and weight are all less, must milling before the ingot rolling go its surface at least 2.5mm deeply feel layer.This shows that rolling beryllium copper technical difficulty is large, lumber recovery, production efficiency be low.And in atmospheric environment the melting beryllium copper, have the drawbacks such as beryllium metallic pollution environment.
Physical gas phase deposition technology has that film coating composition purity is high, process controllability strong, cleanliness without any pollution and be easy to realize the continuously advantage such as production of industrialization; particularly aspect environment protection, the physical vacuum gas phase deposition technology has the unrivaled superiority of other general technologies.The present invention adopts the continuous magnetron sputtering physical vapor deposition to prepare Cu-1～3wt.%Be latten method and avoids the technical bottleneck that melting ingot casting in the rolling is easy to occur component segregation, selecting the fine copper strip that is highly susceptible to roll forming is base material, adopt the magnetron sputtering technology of high-efficient energy-saving environment friendly at the rich beryllium rete of fine copper base band deposition, and then carry out DIFFUSION TREATMENT, obtain the beryllium copper band of suitable beryllium content.
Summary of the invention
The object of the invention is to avoid the deficiencies in the prior art a kind of method that adopts the continuous magnetron sputtering physical vaporous deposition to prepare the beryllium copper thin plate is provided.Fast, quality controllable, the high efficiency of method sedimentation rate of the present invention, preparation process without beryllium element oxidation and contaminate environment, harmful to human security problems, therefore extremely are fit to industrial applications under the vacuum condition.
For achieving the above object, the technical scheme that the present invention takes is: a kind of method that adopts the continuous magnetron sputtering physical vaporous deposition to prepare the beryllium copper thin plate, its principal feature are that step is:
(1). the pure copper strips of choosing thickness and be 0.1～0.25mm is made substrate, and does pre-treatment: cleaned 3～5 minutes at concentration 3～5%, 60～80 ℃ of alkali lye of temperature, remove oil stain; Then cleaned 3～5 minutes scale removal at concentration 3～5% dilute sulphuric acids; Use the clear water rinsing; In the dehydrated alcohol ultrasonic cleaning, dry up stand-by;
(2). choose pure Be target or high beryllium content beryllium copper 50～80wt.%Be alloy target material:
Preparation
Circle or the square pure Be of 1000～1500mm * 180～300mm * 6～20mm or high beryllium content beryllium copper 50～80wt.%Be alloy target material are as magnetic control spattering target, and be stand-by;
(3). the pure copper strips after step (1) is processed is installed on the chip bench of magnetron sputtering equipment as anode; Again the pure Be target of step (2) or high beryllium content beryllium copper 50～80wt.%Be alloy target material are packed among the magnetron sputtering coater target stand, as negative electrode;
Suction to 2 * 10
-3～8 * 10
-4Behind the Pa, pass into argon gas and make pressure-stabilisation in the magnetron sputtering coater in 0.2～0.8Pa scope;
Regulate the magnetron sputtering deposition condition:
Preheating pure copper strips to 200 ℃～500 ℃;
Sparking voltage 280V～700V, electric current 2A～40A, sedimentation rate are 0.8～1.5 μ m/min;
Carry out pure copper strips rich surface Be thin film deposition under this condition, depositing time 10～30 minutes makes the plated film copper strips;
(4). the plated film copper strips after step (3) is processed is carried out 650～750 ℃ of DIFFUSION TREATMENT, and diffusion time, 10～30min namely obtained the Cu-1 of section distributed components～3wt.%Be latten material.
Described employing continuous magnetron sputtering physical vapor deposition prepares Cu-1～3wt.%Be latten method, in step (3), be placed on respectively on a plurality of target position that opposition is installed in the magnetron sputtering coater by pure Be or high beryllium content beryllium copper target with a plurality of identical components, pure copper strips passes from the centre, realizes the quick continuous coating processing of wide cut substrate Double-side Synchronous.
Described employing continuous magnetron sputtering physical vapor deposition prepares Cu-1～3wt.%Be latten method, and in step (3), the rich Be film thickness of pure copper strips surface deposition is 10～35 μ m.
Described employing continuous magnetron sputtering physical vapor deposition prepares Cu-1～3wt.%Be latten method, and in step (2), target is selected described high beryllium content beryllium copper target, and beryllium content is at 50～80wt.%.
Beneficial effect of the present invention: the present invention adopts the continuous magnetron sputtering physical vapor deposition to prepare Cu-1～3wt.%Be latten method, can continuously, controllably ooze beryllium and process on technique.By to the choosing of a plurality of target position in the magnetron sputtering coater, can carry out arbitrarily the deposition of single face and/or two-sided Be, also can regulate sedimentation rate simultaneously, its depositing operation is simple to operate.
In the present invention, select rolling pure copper strips for oozing the Be base material.Choose different B e content target plated film and ooze the Be experiment.The result shows, after method of the present invention is processed, can obtain Cu-1～3wt.%Be latten.
The inventive method is compared with traditional rolling, and is simple for process, and beryllium content height is controlled flexibly, can satisfy the Special use demand of various occasion beryllium coppers, preparation technology can be fit to industrialization and produce continuously, and the finished product rate is high, steady quality, and cheap for manufacturing cost.
Embodiment
Below principle of the present invention and feature are described, institute only gives an actual example and to be used for explanation the present invention, is not be used to limiting scope of the present invention.
Embodiment 1: a kind of employing continuous magnetron sputtering physical vapor deposition prepares Cu-1～3wt.%Be latten method, the steps include:
It is that the pure copper strips of 0.1～0.25mm is made substrate that step 1. is chosen thickness, and does following pre-treatment:
(1) concentration 3～5%, 60～80 ℃ of yellow soda ash alkali lye of temperature cleaned 3～5 minutes, removed oil stain;
(2) concentration 3～5% dilute sulphuric acids cleaned 3～5 minutes, scale removal;
(3) clear water rinsing;
(4) dehydrated alcohol ultrasonic cleaning dries up stand-by;
Step 2. choose pure Be target or high beryllium content beryllium copper (50～80wt.%Be) alloy target materials:
Preparation
Circle or the square pure Be of 1000～1500mm * 180～300mm * 6～20mm or high beryllium content beryllium copper 50～80wt.%Be alloy target material are as magnetic control spattering target, and be stand-by;
(3). the pure copper strips after step (1) is processed is installed on the chip bench of magnetron sputtering equipment as anode; Again the pure Be target of step 2 or high beryllium content beryllium copper 50～80wt.%Be alloy target material are packed among the magnetron sputtering target stand, as negative electrode;
Suction to 2 * 10
-3～8 * 10
-4Behind the Pa, pass into argon gas and make pressure-stabilisation in the magnetron sputtering coater in 0.2～0.8Pa scope;
Regulate the magnetron sputtering deposition condition:
Preheating pure copper strips to 200 ℃～500 ℃;
Sparking voltage 280V～700V, electric current 2A～40A, sedimentation rate are 0.8～1.5 μ m/min;
Carry out pure copper strips rich surface Be thin film deposition under this condition, depositing time 10～30 minutes makes the plated film copper strips;
Step 4. is carried out 650～750 ℃ of DIFFUSION TREATMENT with the plated film copper strips after step 3 is processed, and diffusion time, 10～30min namely obtained the Cu-1 of section distributed components～3wt.%Be latten material.
In step 3, be placed on respectively on a plurality of target position that opposition is installed in the magnetron sputtering coater by pure Be or high beryllium content beryllium copper target with a plurality of identical components, pure copper strips passes from the centre, realizes the quick continuous coating processing of wide cut substrate Double-side Synchronous.
In step 3, the rich Be film thickness of pure copper strips surface deposition is 10～35 μ m.
In step 2, when choosing high Be content beryllium copper and be target, beryllium content is at 50～80wt.%.
Described employing continuous magnetron sputtering physical vapor deposition prepares Cu-1～3wt.%Be latten method, and the microhardness of the Cu-1 for preparing～3wt.%Be latten is at 320～380HV0.1, and tensile strength reaches 480～520Mpa.
Adopt the continuous magnetron sputtering physical vapor deposition to prepare the method for Cu-1～3wt.%Be latten, the magnetron sputtering physical gas-phase deposite method makes the Ar pneumoelectric from producing glow plasma under vacuum, electric field action, bombardment beryllium (or beryllium copper) target as sputter goes out high-energy Be(or Be, Cu) atom, deposit to the pure Cu substrate surface, form in conjunction with good rich Be rete; And then carry out DIFFUSION TREATMENT, and realize the beryllium that oozes of pure copper strips is processed, obtain the preparation method of a kind of novel Cu-1～3wt.%Be latten.
Employing continuous magnetron sputtering physical vapor deposition prepares Cu-1～3wt.%Be latten method and rolling compares, and does not have the strip-rolling problems of crack, and processing method is simple, and vacuum plating mode target purity is high, composition is controlled; Its post-depositional surface quality is good and even; Fine copper base band magnetron sputtering oozes the characteristics such as the beryllium process controllability is strong, the feature of environmental protection is good.
Adopt the Cu-1 that the continuous magnetron sputtering physical vapor deposition prepares～3wt.%Be latten to have (1) and entirely compose direct-reading spectrometer through Auger electron spectrometer and ICP to measure its chemical ingredients Be content be 1～3wt.%, and present even distribution along the cross section; (2) mechanical property of latten such as tensile strength reach 480～520Mpa, and microhardness is at 320～380HV0.1.
Embodiment 2 magnetron sputtering vapour deposition single faces ooze Be
Step 1: choose pure Cu substrate
Choose 200mm * 200mm, the pure copper strips of thick 0.20mm is made substrate, cleans 5 minutes with concentration 5%, temperature 60 C yellow soda ash alkali lye first, removes oil stain; Be that 4% dilute hydrochloric acid cleaned scale removal 3 minutes with concentration again; Then use the clear water rinsing; Use again the dehydrated alcohol ultrasonic cleaning, dry up stand-by.
Step 2: choose pure Be target
Preparation
Circular pure Be target is as magnetic control spattering target, and is stand-by;
(3). the pure copper strips after step (1) is processed is installed on the chip bench of magnetron sputtering equipment as anode; Again the pure Be target of step 2 is packed among the magnetron sputtering target stand, as negative electrode;
Suction to 1.2 * 10
-3Behind the Pa, pass into argon gas and make pressure-stabilisation in the magnetron sputtering coater at 0.6Pa;
Regulate the magnetron sputtering deposition condition:
Preheating pure copper strips to 350 ℃;
Sparking voltage 480V, electric current 3.5A, sedimentation rate are 1.2 μ m/min;
Under this condition, carry out pure copper strips surface Be film deposition 20 minutes, and prepared the plated film copper strips of thicknesses of layers 20～22m;
Step 4: the plated film copper strips after step 3 is processed is carried out 720 ℃ of DIFFUSION TREATMENT, and be 25min diffusion time, namely obtains the Cu-1 of section homogeneous chemical composition～3wt.%Be latten material.
It is 1.9wt.% that the above-mentioned Cu-1 for preparing～3wt.%Be latten is composed the average Be content that direct-reading spectrometer detects sample entirely through Auger electron spectrometer and ICP, and composition presents even distribution along the cross section.Its microhardness reaches 338～355HV0.1 after testing, and tensile strength reaches 488～506Mpa.
Embodiment 3 magnetron sputtering vapour deposition single faces ooze Be
Step 1: choose pure Cu substrate
Choose 1000mm * 200mm, the pure copper strips of thick 0.15mm is made substrate, cleans 5 minutes with concentration 5%, temperature 60 C sodium carbonate solution first, removes oil stain; Be that 4% dilute hydrochloric acid cleaned scale removal 3 minutes with concentration again; Then use the clear water rinsing; Use again the dehydrated alcohol ultrasonic cleaning, dry up stand-by.
Step 2: choose high Be content beryllium copper target
The high Be content of founding 1200mm * 200mm * 15mm beryllium copper (Cu-80wt.%Be) alloy target material, stand-by;
Step 3: the pure copper strips after step 1 is processed is installed on the substrate of magnetron sputtering film machine as anode; Again the beryllium copper target after step 2 is processed is put into magnetron sputtering coater, as negative electrode;
Suction to 1 * 10
-3Behind the Pa, pass into argon gas and make pressure-stabilisation in the magnetron sputtering coater at 0.6Pa;
Regulate the magnetron sputtering deposition condition:
Preheating pure copper strips to 320 ℃;
Sparking voltage 660V, electric current 35A, sedimentation rate are 1.5～2 μ m/min;
Carry out pure copper strips rich surface Be film deposition under this condition, preparing thicknesses of layers is the plated film copper strips of 20～22m;
Step 4: the plated film copper strips after step 3 is processed is carried out 750 ℃ of DIFFUSION TREATMENT, and be 60min diffusion time, namely obtains the Cu-1 of section homogeneous chemical composition～3wt.%Be latten material.
It is 1.92wt% that the above-mentioned Cu-1 for preparing～3wt.%Be latten is composed the average Be content that direct-reading spectrometer detects sample entirely through Auger electron spectrometer and ICP, and composition presents even distribution along the cross section.Its microhardness reaches 325～348HV0.1 after testing, and tensile strength reaches 486～510Mpa.
The two-sided Be that oozes of embodiment 4 magnetron sputtering vapour depositions
Step 1: choose pure Cu substrate
Choose 200mm * 200mm, the pure copper strips of thick 0.25mm is made substrate, cleans 5 minutes with concentration 5%, temperature 60 C yellow soda ash alkali lye first, removes oil stain; Be that 4% dilute hydrochloric acid cleaned scale removal 3 minutes with concentration again; Then use the clear water rinsing; Use again the dehydrated alcohol ultrasonic cleaning, dry up stand-by.
Step 2: choose pure Be target
Choose
2 of pure Be targets, stand-by;
Step 3: 2 pure Be targets after step 2 is processed are put among two target position of magnetron sputtering coater vis-a-vis, as negative electrode, again the pure copper strips after processing through step 1 is hung at magnetron sputtering coater two in the middle of target surface, as anode;
Suction to 8 * 10
-4Behind the Pa, pass into argon gas and make pressure-stabilisation in the magnetron sputtering coater at 0.4Pa;
Regulate magnetron sputtering codeposition condition:
Preheating pure copper strips to 300 ℃;
Sparking voltage 480V, electric current 20A, sedimentation rate are 1.2～1.5m/min;
Under this condition, carry out synchronous Be deposition 10 minutes to pure copper strips is two-sided, prepare the plated film copper strips that the upper and lower surface thicknesses of layers is 13～14m;
Step 4: the plated film copper strips after step 3 is processed is carried out 720 ℃ of DIFFUSION TREATMENT, and be 15min diffusion time, namely obtains the Cu-1 of section homogeneous chemical composition～3wt.%Be latten material.
It is 2.1wt.% that the above-mentioned Cu-1 for preparing～3wt.%Be latten is composed the average Be content that direct-reading spectrometer detects sample entirely through Auger electron spectrometer and ICP, and composition presents even distribution along the cross section.Its microhardness reaches 350～372HV0.1 after testing, and tensile strength reaches 498～512Mpa.
What the present invention adopted carries out Double-side Synchronous continuous magnetron sputtering plated film and method of diffusion prepares the thick Cu-1 of 0.1～0.25mm～3wt.%Be latten to the fine copper thin plate, can be controlled at and finish the deposition procedures of oozing Be in 10～30min.And its Large-Area-Uniform deposition characteristics also can satisfy the industrialization continuous production requirement of Cu-1～3wt.%Be thin plate fully, realizes that for final magnetron sputtering method prepares Cu-1～3wt.%Be thin plate and builds at the industrially scalable tinuous production and established good basis.
Beryllium copper is a kind of typical precipitation strength type alloy, and the Cu-1 of aforesaid method preparation～3wt.%Be thin plate has splendid use properties after processing through further solid solution aging.Beryllium copper is the indispensable strategic materials of national defense construction and scientific progress, is again day by day to improve the important materials that close ties are arranged with living standards of the people.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. method that adopts the continuous magnetron sputtering physical vaporous deposition to prepare the beryllium copper thin plate is characterized in that step is:
(1). the pure copper strips of choosing thickness and be 0.1～0.25mm is made substrate, and does pre-treatment: cleaned 3～5 minutes at concentration 3～5%, 60～80 ℃ of alkali lye of temperature, remove oil stain; Then cleaned 3～5 minutes scale removal at concentration 3～5% dilute sulphuric acids; Use the clear water rinsing; Use the dehydrated alcohol ultrasonic cleaning, dry up stand-by;
(2). choose pure Be target or high beryllium content beryllium copper 50～80wt.%Be alloy target material:
Preparation
Pure Be or high beryllium content beryllium copper 50～80wt.%Be alloy circular or that 1000～1500mm * 180～300mm * 6～20mm is square are used as magnetic control spattering target, and be stand-by;
(3). the pure copper strips after step (1) is processed is installed on the chip bench of magnetron sputtering equipment as anode; Again the pure Be target of step 2 or high beryllium content beryllium copper 50～80wt.%Be alloy target material are packed among the magnetron sputtering coater target stand, as negative electrode;
Suction to 2 * 10
-3～8 * 10
-4Behind the Pa, pass into argon gas and make pressure-stabilisation in the magnetron sputtering coater in 0.2～0.8Pa scope;
Regulate the magnetron sputtering deposition condition:
Preheating pure copper strips to 200 ℃～500 ℃;
Sparking voltage 280V～700V, electric current 2A～40A, sedimentation rate are 0.8～1.5 μ m/min;
Carry out pure copper strips rich surface Be thin film deposition under this condition, depositing time 10～30 minutes makes the plated film copper strips;
(4). the plated film copper strips after step (3) is processed is carried out 650～750 ℃ of DIFFUSION TREATMENT, and diffusion time, 10～30min namely obtained the Cu-1 of section distributed components～3wt.%Be latten material.
2. employing continuous magnetron sputtering physical vaporous deposition as claimed in claim 1 prepares the method for beryllium copper thin plate, it is characterized in that: in step (3), be placed on respectively on a plurality of target position that opposition is installed in the magnetron sputtering coater by pure Be or high beryllium content beryllium copper target with a plurality of identical components, pure copper strips passes from the centre, realizes the quick continuous coating processing of wide cut substrate Double-side Synchronous.
3. employing continuous magnetron sputtering physical vaporous deposition as claimed in claim 1 prepares the method for beryllium copper thin plate, it is characterized in that: in step (3), the rich Be film thickness of pure copper strips surface deposition is 10～35 μ m.
4. employing continuous magnetron sputtering physical vaporous deposition as claimed in claim 1 prepares the method for beryllium copper thin plate, it is characterized in that: in step (2), target is selected described high beryllium content beryllium copper target, and beryllium content is at 50～80wt.%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210551335.3A CN102965634B (en) | 2012-12-18 | 2012-12-18 | Method for preparing beryllium-copper alloy sheet by adopting continuous magnetron sputtering physical-vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210551335.3A CN102965634B (en) | 2012-12-18 | 2012-12-18 | Method for preparing beryllium-copper alloy sheet by adopting continuous magnetron sputtering physical-vapor deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102965634A true CN102965634A (en) | 2013-03-13 |
| CN102965634B CN102965634B (en) | 2014-01-22 |
Family
ID=47796067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210551335.3A Active CN102965634B (en) | 2012-12-18 | 2012-12-18 | Method for preparing beryllium-copper alloy sheet by adopting continuous magnetron sputtering physical-vapor deposition method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102965634B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110952065A (en) * | 2019-12-23 | 2020-04-03 | 祝珍珍 | Copper foil for lithium battery and preparation method thereof |
| CN111168182A (en) * | 2020-01-06 | 2020-05-19 | 中航力源液压股份有限公司 | Preparation method of intermediate transition layer applied to vacuum diffusion welding |
| CN113088753A (en) * | 2021-03-31 | 2021-07-09 | 五矿铍业股份有限公司 | Method for preparing beryllium-copper master alloy by adopting vacuum consumable arc melting |
| RU2773965C1 (en) * | 2022-02-09 | 2022-06-14 | Артем Олегович Бахметьев | Method for coating acupuncture needle |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1616691A (en) * | 2004-11-26 | 2005-05-18 | 宋协福 | Beryllium copper alloy |
| US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
| CN101550504A (en) * | 2009-05-25 | 2009-10-07 | 扬中市利达合金制品有限公司 | Manufacturing method of high-conductivity low-beryllium bronze band |
-
2012
- 2012-12-18 CN CN201210551335.3A patent/CN102965634B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1616691A (en) * | 2004-11-26 | 2005-05-18 | 宋协福 | Beryllium copper alloy |
| US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
| CN101550504A (en) * | 2009-05-25 | 2009-10-07 | 扬中市利达合金制品有限公司 | Manufacturing method of high-conductivity low-beryllium bronze band |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110952065A (en) * | 2019-12-23 | 2020-04-03 | 祝珍珍 | Copper foil for lithium battery and preparation method thereof |
| CN110952065B (en) * | 2019-12-23 | 2021-11-16 | 深圳市诚威新材料有限公司 | Copper foil for lithium battery and preparation method thereof |
| CN111168182A (en) * | 2020-01-06 | 2020-05-19 | 中航力源液压股份有限公司 | Preparation method of intermediate transition layer applied to vacuum diffusion welding |
| CN111168182B (en) * | 2020-01-06 | 2022-03-01 | 中航力源液压股份有限公司 | Preparation method of intermediate transition layer applied to vacuum diffusion welding |
| CN113088753A (en) * | 2021-03-31 | 2021-07-09 | 五矿铍业股份有限公司 | Method for preparing beryllium-copper master alloy by adopting vacuum consumable arc melting |
| RU2773965C1 (en) * | 2022-02-09 | 2022-06-14 | Артем Олегович Бахметьев | Method for coating acupuncture needle |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102965634B (en) | 2014-01-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106498467B (en) | A kind of preparation method of ultra-thin carrier copper foil that stablizing stripping | |
| WO2013045454A3 (en) | Coating of substrates using hipims | |
| CN102965634B (en) | Method for preparing beryllium-copper alloy sheet by adopting continuous magnetron sputtering physical-vapor deposition method | |
| CN102978569A (en) | Method for preparing alloy thin plate with Fe, 5.5-6.5% by weight of Si and 0.3-1.0% by weight of Al by adopting continuous multi-arc ion plating physical vapor deposition | |
| CN103014634B (en) | Method for preparing beryllium-copper alloy sheet by adopting continuous multi-arc ion plating physical vapour deposition | |
| CN109576679A (en) | A kind of fuel battery double plates carbon coating continuous deposition system and its application | |
| CN108018529A (en) | Aluminum-based fuel cell bipolar plate surface composite coating and preparation method thereof | |
| CN108468017A (en) | A kind of magnetically controlled sputter method preparing silver-colored graphite composite deposite in copper contact surfaces | |
| CN103552312A (en) | Composite material with titanium diboride intermediate coating | |
| CN104694990A (en) | Aluminum alloy micro-arc oxidation method | |
| CN102330124A (en) | Pulse electrochemical deposition and tissue adjustment processes for nickel plating copper belt | |
| KR20130133694A (en) | Copper coated iron based bus bar and method for manufacturing the same | |
| CN111926303A (en) | Preparation method of high-entropy alloy film | |
| CN103266303A (en) | Electronic device adopting magnetron sputtering to plate film, and manufacturing method thereof | |
| CN106282952B (en) | The preparation method of monel light sheet material | |
| CN102534489A (en) | Film coating part and manufacturing method thereof | |
| CN102522241A (en) | CuCr alloy contact material and preparation method thereof | |
| CN109735821A (en) | A kind of cathode of high field intensity high target utilization ratio | |
| CN104109830A (en) | Surface hafnium-infiltrated austenitic stainless steel resistant to high temperature and preparation method thereof | |
| Zheng et al. | Influence of the Cu2O morphology on the metallization of Al2O3 ceramics | |
| CN107761059A (en) | Silver alloy coating on surface of electrical alloy part, preparation method of silver alloy coating and electrical alloy part | |
| CN109536905B (en) | Preparation method of TiC-Si solid solution conductive coating for copper surface | |
| CN209974874U (en) | Rectangular magnetron sputtering cathode with high target material utilization rate | |
| CN209974873U (en) | Cathode with high field intensity and high target utilization rate | |
| CN104651790B (en) | A kind of metallic resistance rate Cu/Cu2O semiconductor disperse laminated films and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |