CN102964841A - Semiconductive silicon rubber shielding material for radiation-resistant cable, and preparation method thereof - Google Patents

Semiconductive silicon rubber shielding material for radiation-resistant cable, and preparation method thereof Download PDF

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Publication number
CN102964841A
CN102964841A CN2012105118867A CN201210511886A CN102964841A CN 102964841 A CN102964841 A CN 102964841A CN 2012105118867 A CN2012105118867 A CN 2012105118867A CN 201210511886 A CN201210511886 A CN 201210511886A CN 102964841 A CN102964841 A CN 102964841A
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China
Prior art keywords
silicon rubber
parts
shielding material
carbon black
cable
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CN2012105118867A
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Chinese (zh)
Inventor
张圣博
李广元
沈卢东
盛业武
陈光高
王娟
陈超
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Sichuan Star Cable Co Ltd
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Sichuan Star Cable Co Ltd
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Priority to CN2012105118867A priority Critical patent/CN102964841A/en
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Abstract

The invention relates to a semiconductive silicon rubber shielding material for a radiation-resistant cable, and a preparation method of the material, belonging to the technical field of cable shielding material. The semiconductive silicon rubber shielding material comprises the raw material components in parts by weight: 100 parts of silicon rubber, 20-40 parts of conductive carbon black, 40-50 parts of white carbon black, 1.0-2.5 parts of dicumyl peroxide, 2.0-3.0 parts of auxiliary vulcanizing agent, 5-15 parts of diphenyl silanediol, 1.0-2.0 parts of stearic acid, 4-6 parts of zinc oxide and 2-5 parts of ferric oxide, wherein the silicon rubber is phenyl ether supporting silicone rubber or phenylene silicone rubber; and the auxiliary vulcanizing agent is triene propyl cyanurate. The silicon rubber shielding material is good in radiation-resistant performance, and can give play to the specified function for a long time on radiation occasion when being used as a shielding layer of an electric wire and the cable.

Description

A kind of rdaiation resistant cable semiconduction silicon rubber shielding material and preparation method thereof
Technical field
The present invention relates to a kind of cable shield material, more particularly, the present invention relates to a kind of rdaiation resistant cable with semiconduction silicon rubber shielding material and preparation method thereof, belong to cable shield material technology field.
Background technology
At wires and cables industry, conductor shielding and insulation shielding mainly adopt the semi-conductive high polymer material, namely are to add conductive filler material in the macromolecule matrix material, such as Shawinigan black, electrically conductive graphite powder, conductive carbon fibre etc.These two kinds of shieldings in power cable usually take EVA as matrix.EVA is thermoplastic elastomer, and its soft degree is not as good as rubber, and in the cable that often is applied to fixedly lay, and for movable type cable, EVA seems awkward because of the restriction of its VA content.Reason is: VA content is higher, and EVA elasticity is more good more soft, but its price is more expensive and processing characteristics is relatively poor (because of its to the easy roll banding of temperature sensitive).Therefore, the conductor shielding of movable type cable and insulation shielding adopt rubber as matrix usually.
At present, wires and cables industry rubber commonly used has chlorinated polyethylene rubber (CM), ethylene-propylene rubber(EPR) (EPDM) and silicon rubber.Conductive filler material is added the semi-conductive shielding material that chlorinated polyethylene rubber is made, give greatly because of its hardness and mooney viscosity and refine glue and crowded rubber brings difficulty.Its reason is the structural strong of conductive filler material on the one hand, is that on the other hand chlorinated polyethylene rubber causes the mooney viscosity of self larger because molecular chain has polarity.For addressing this problem, the way that usually adopts is that conductive filler material is added in the low ethylene-propylene rubber(EPR) of mooney viscosity, perhaps adds in the silicon rubber.Because the price of conductive filler material and ethylene-propylene rubber(EPR) is all relatively more expensive, so production cost increases severely.From controlling the angle of this synergy, some producer produces the semi-conductive screen sizing material with silicon rubber as matrix, and has obtained good effect.
Yet, all consider the performance of semi-conductive shielding material in the industry from thermotolerance, electroconductibility, these three aspects of cost, this is feasible to common cable shield, and these shielding materials of occasion that radiation is arranged are seemed that performance is not enough.The present invention considers from radiation-resistant angle, selects phenylene silicone rubber and phenylate support silicon rubber as matrix, adds corresponding graphitized carbon black again, makes radiation hardness type semiconduction silicon rubber shielding material.This shielding material outside the advantage of good conductivity, can also have preferably mechanical property conservation rate except high temperature resistant under the roentgen-ray of doses.Can be applicable to the occasion that Nuclear power plants, ultraviolet lighting, thermal radiation etc. have requirement to thermotolerance and the radiation resistance of cable.
It is 200810244511.2 that State Intellectual Property Office discloses an application number in 2009.5.13, name is called the patent of invention of " a kind of industrial production process of silicon rubber polyolefin alloy cable material ", this patent disclosure a kind of industrial production process of silicon rubber polyolefin alloy cable material, comprise that kneading is mixing, twin-roll mixing and filtration, thin-pass, slitting and extruding, mediate mixing comprising: (one) carries out the mixing reinforcement rubber unvulcanizate (I) that obtains to silicon rubber and dried white carbon black in its vacuum kneader, and (two) carry out the mixing modification rubber unvulcanizate (II) that obtains to polyolefine and free radical scavenger and reinforcement rubber unvulcanizate (I) in the electric control temperature kneader; Twin-roll mixing is modification rubber unvulcanizate (II), methyl vinyl silicon oil and hydroxy silicon oil to be carried out mixingly in twin-roll machine, adds linking agent again and continues the mixing rubber alloy cable material that obtains.This Tensile strength can tolerate 100-120 ℃ envrionment temperature over a long time greater than 6.0MPa, more than the tearing strength 13.6kN/m, not only can be used as cable insulation material, especially is suitable as the high temperature resistant type cable sheath material.
The shortcoming of documents is as follows:
1, good insulating property cause it can not be used as the cable shield material;
2, need special calendering process preparation, its production cost is increased, materials'use is limited;
3, raw materials used is silicon rubber and polyolefine, and silicon rubber is rubber, and polyolefine is plastics, and the consistency of this bi-material is relatively poor, thereby product ftractures easily and wears out;
4, the cable material in the above-mentioned patent can't use in the heat-resisting and radiation-resistant occasion of needs.
Summary of the invention
The present invention is intended to solve shielding material light fugitive of the prior art according to, the problem such as radiation hardness not, provide a kind of cable with radiation hardness semiconduction silicon rubber shielding material and preparation method thereof, that this semi-conductive shielding material has is heat-resisting, the characteristics of radiation hardness, good processability.
To achieve these goals, its concrete technical scheme is as follows:
A kind of cable radiation hardness semiconduction silicon rubber shielding material is characterized in that: comprise following feed composition according to the parts by weight meter:
100 parts in silicon rubber
20~40 parts of graphitized carbon blacks
40~50 parts of white carbon blacks
1.0~2.5 parts of dicumyl peroxides
2.0~3.0 parts of cocuring agents
5~15 parts of Diphenylsilanediols
1.0~2.0 parts of stearic acid
4~6 parts in zinc oxide
2~5 parts of ferric oxide;
Described silicon rubber is phenylate support silicon rubber or phenylene silicone rubber;
Phenylate support silicon rubber and phenylene silicone rubber are a class silicon rubber of introducing respectively phenylate support and penylene group on polysiloxane backbone.The introducing of phenylate support base and penylene base improves the radiation resistance of silicon rubber greatly, and the simultaneously existence because of aromatic ring increases the molecule chain rigidity, thereby thermotolerance and better mechanical property.Preferentially select phenylate support silicon rubber, because the radiation resistance of phenylate support silicon rubber is better than phenylene silicone rubber;
Described cocuring agent is triallylcyanurate (TAIC);
The advantage of triallylcyanurate (TAIC) be can with crosslinked effective cooperation of vulcanizing agent dicumyl peroxide (DCP), when DCP performance crosslinked action, because TAIC has three molecular chain terminal double bonds, and these three two keys all are connected on the same Molecular Ring by carbon-carbon single bond, form three distant claw-like structures, promoter action be can play, rate of crosslinking and crosslinking degree improved.
Preferably, silicon rubber of the present invention is phenylate support silicon rubber.
The standard of above-mentioned phenylate support silicon rubber is that phenylate supports basic content 30%~60%, methyl content 10%~15%, contents of ethylene 0.1%~0.3%.
Described graphitized carbon black is that median size is less than 20nm, than the graphitized carbon black of resistance between 0.35~0.50 Ω cm for conventional standard.
Preferably, the moisture of graphitized carbon black of the present invention≤1.75%, ash content≤1.75% is 0.35 Ω cm than resistance, the pH value is 7.4.
Described Diphenylsilanediol is a kind of low molecular weight substance, can be used as the radioprotective additive and uses.
Preferably, white carbon black of the present invention is thermal silica, dioxide-containing silica 〉=99%, pH value 3.7~4.5, oil-absorption(number) 3.46~3.60cm 3/ g, specific surface area 350~410m 2/ g is a kind of strengthening agent.
Described stearic acid is conventional products, adds in the silicon rubber to play activation with zinc oxide.
Described zinc oxide is conventional products, is used with stearic acid, plays activation.
Described ferric oxide is conventional products, adds silicon rubber and can improve its heat aging property.
A kind of cable preparation method of radiation hardness type semiconduction silicon rubber shielding material is characterized in that: comprise following processing step:
A, weighing
It is stand-by to take by weighing raw material according to prescription, and the baking oven of graphitized carbon black being put into 100~105 ℃ heats 2~3h;
B, mixing
Add successively silicon rubber, stearic acid, zinc oxide, ferric oxide, graphitized carbon black, white carbon black, Diphenylsilanediol, triallylcyanurate and dicumyl peroxide in the mill and carry out mixingly, thin-pass can be played the glue slice 4~5 times after dicumyl peroxide added;
C, park and back mixing
Then film after mixing at room temperature carries out back mixing through parking, and mill is adopted in back mixing, treats the sizing material deliquescing, after smooth surface is smooth, can play the glue slice;
D, sulfuration
The mould sulfuration that film after the back mixing is put into vulcanizing press obtains vulcanizing sheet;
E, detection
After the sulfuration sheet is placed 16h at least, carry out correlated performance and detect.
Preferably, in step B, the roller speed ratio of described mill is 1:1.35~1:1.4.
Preferably, in step B, described mixing temperature is below 40 ℃.
Preferably, in step C, the described storage period is 24~36 hours.
Preferably, in step C, before described lower glue slice, rubber unvulcanizate is crossed roller 4 times in mill, the each mistake behind the roller along the vertical doubling of rubber unvulcanizate, and allow film always cross roller with same direction, and adjusting roll spacing, to make the thickness of extruded sheet be about 2.0~2.5mm.
Preferably, in step D, the temperature of described sulfuration is 160~165 ℃, and curing time is 13~15min, keeps cavity pressure to be not less than 3.5MPa between curing time.
The useful technique effect that the present invention brings:
1, the silicon rubber radiation resistance selected of the present invention is good, during as the electric wire screen layer, can bring into play for a long time its predetermined function in the radiation occasion.
2, the silicon rubber plasticity selected of the present invention is high, pliability is good, as the body material of semi-conductive shielding material, can avoid because of the structural drawback that causes by force the film hardening of graphitized carbon black, thereby so that semi-conductive shielding material has good process for processing performance.
3, the silicone rubber high temperature resistant of the present invention's selection can reach 250~300 ℃, as the conductor shielding material time, can be under the normal working temperature of conductor life-time service, even under superpotential and short-circuit conditions, be unlikely to damage, and the preparation technology of shielding material of the present invention is simple, drops into very little.
4, the present invention selects ferric oxide as heat-resisting additive, can under the not obvious prerequisite that affects phenylate support silicon rubber radiation resistance, improve its heat aging property.
5, the vulcanizing agent selected of the present invention is dicumyl peroxide (DCP), cocuring agent is cyanacrylate (TAIC), can improve sulfuration efficient after adding TAIC on the one hand, on the other hand, second the third insulating material of making vulcanizing agent with same employing DCP has preferably production matching.
6, the low-molecular-weight Diphenylsilanediol selected of the present invention is as additive, and Diphenylsilanediol can improve the radiation resistance of silicon rubber in to a certain degree, also can the sulfuration of silicone rubber compounds not had a negative impact simultaneously.
7, the present invention selects stearic acid and zinc oxide as activator, can improve the dispersing uniformity of each component in sizing material, and simultaneously, stearic acid can reduce the roll banding performance of silicon rubber as internal lubricant, conveniently carries out process for processing.
Embodiment
Embodiment 1
A kind of cable radiation hardness semiconduction silicon rubber shielding material comprises following feed composition according to the parts by weight meter:
100 parts in silicon rubber
20 parts of graphitized carbon blacks
40 parts of white carbon blacks
1.0 parts of dicumyl peroxides
2.0 parts of cocuring agents
5 parts of Diphenylsilanediols
1.0 parts of stearic acid
4 parts in zinc oxide
2 parts of ferric oxide;
Described silicon rubber is phenylate support silicon rubber or phenylene silicone rubber; Described cocuring agent is triallylcyanurate.
Embodiment 2
A kind of cable radiation hardness semiconduction silicon rubber shielding material comprises following feed composition according to the parts by weight meter:
100 parts in silicon rubber
40 parts of graphitized carbon blacks
50 parts of white carbon blacks
2.5 parts of dicumyl peroxides
3.0 parts of cocuring agents
15 parts of Diphenylsilanediols
2.0 parts of stearic acid
6 parts in zinc oxide
5 parts of ferric oxide;
Described silicon rubber is phenylate support silicon rubber or phenylene silicone rubber; Described cocuring agent is triallylcyanurate.
Embodiment 3
A kind of cable radiation hardness semiconduction silicon rubber shielding material comprises following feed composition according to the parts by weight meter:
100 parts in silicon rubber
30 parts of graphitized carbon blacks
45 parts of white carbon blacks
1.75 parts of dicumyl peroxides
2.5 parts of cocuring agents
10 parts of Diphenylsilanediols
1.5 parts of stearic acid
5 parts in zinc oxide
3.5 parts of ferric oxide;
Described silicon rubber is phenylate support silicon rubber or phenylene silicone rubber; Described cocuring agent is triallylcyanurate.
Embodiment 4
A kind of cable radiation hardness semiconduction silicon rubber shielding material comprises following feed composition according to the parts by weight meter:
100 parts in silicon rubber
33 parts of graphitized carbon blacks
41 parts of white carbon blacks
1.8 parts of dicumyl peroxides
2.7 parts of cocuring agents
12 parts of Diphenylsilanediols
1.2 parts of stearic acid
5.6 parts in zinc oxide
2.1 parts of ferric oxide;
Described silicon rubber is phenylate support silicon rubber or phenylene silicone rubber; Described cocuring agent is triallylcyanurate.
Embodiment 5
On the basis of embodiment 1-4, preferred:
Described silicon rubber is phenylate support silicon rubber.
The moisture of described graphitized carbon black≤1.75%, ash content≤1.75% is 0.35 Ω cm than resistance, the pH value is 7.4.
Described white carbon black is thermal silica, dioxide-containing silica 〉=99%, pH value 3.7, oil-absorption(number) 3.46cm 3/ g, specific surface area 350m 2/ g.
Embodiment 6
On the basis of embodiment 1-4, preferred:
Described silicon rubber is phenylate support silicon rubber.
The moisture of described graphitized carbon black≤1.75%, ash content≤1.75% is 0.35 Ω cm than resistance, the pH value is 7.4.
Described white carbon black is thermal silica, dioxide-containing silica 〉=99%, pH value 4.5, oil-absorption(number) 3.60cm 3/ g, specific surface area 410m 2/ g.
Embodiment 7
On the basis of embodiment 1-4, preferred:
Described silicon rubber is phenylate support silicon rubber.
The moisture of described graphitized carbon black≤1.75%, ash content≤1.75% is 0.35 Ω cm than resistance, the pH value is 7.4.
Described white carbon black is thermal silica, dioxide-containing silica 〉=99%, pH value 4.1, oil-absorption(number) 3.53cm 3/ g, specific surface area 380m 2/ g.
Embodiment 8
On the basis of embodiment 1-4, preferred:
Described silicon rubber is phenylate support silicon rubber.
The moisture of described graphitized carbon black≤1.75%, ash content≤1.75% is 0.35 Ω cm than resistance, the pH value is 7.4.
Described white carbon black is thermal silica, dioxide-containing silica 〉=99%, pH value 4, oil-absorption(number) 3.5cm 3/ g, specific surface area 400m 2/ g.
Embodiment 9
A kind of cable preparation method of radiation hardness type semiconduction silicon rubber shielding material comprises following processing step:
A, weighing
It is stand-by to take by weighing raw material according to prescription, and the baking oven of graphitized carbon black being put into 100 ℃ heats 2h;
B, mixing
Add successively silicon rubber, stearic acid, zinc oxide, ferric oxide, graphitized carbon black, white carbon black, Diphenylsilanediol, triallylcyanurate and dicumyl peroxide in the mill and carry out mixingly, thin-pass can be played the glue slice 4 times after dicumyl peroxide added;
[0047]C, park and back mixing
Then film after mixing at room temperature carries out back mixing through parking, and mill is adopted in back mixing, treats the sizing material deliquescing, after smooth surface is smooth, can play the glue slice.
D, sulfuration
The mould sulfuration that film after the back mixing is put into vulcanizing press obtains vulcanizing sheet;
E, detection
After the sulfuration sheet is placed 16h at least, carry out correlated performance and detect.
Embodiment 10
A kind of cable preparation method of radiation hardness type semiconduction silicon rubber shielding material comprises following processing step:
A, weighing
It is stand-by to take by weighing raw material according to prescription, and the baking oven of graphitized carbon black being put into 105 ℃ heats 3h;
B, mixing
Add successively silicon rubber, stearic acid, zinc oxide, ferric oxide, graphitized carbon black, white carbon black, Diphenylsilanediol, triallylcyanurate and dicumyl peroxide in the mill and carry out mixingly, thin-pass can be played the glue slice 5 times after dicumyl peroxide added;
[0050]C, park and back mixing
Then film after mixing at room temperature carries out back mixing through parking, and mill is adopted in back mixing, treats the sizing material deliquescing, after smooth surface is smooth, can play the glue slice.
D, sulfuration
The mould sulfuration that film after the back mixing is put into vulcanizing press obtains vulcanizing sheet;
E, detection
After the sulfuration sheet is placed 16h at least, carry out correlated performance and detect.
Embodiment 11
A kind of cable preparation method of radiation hardness type semiconduction silicon rubber shielding material comprises following processing step:
A, weighing
It is stand-by to take by weighing raw material according to prescription, and the baking oven of graphitized carbon black being put into 101 ℃ heats 2.5h;
B, mixing
Add successively silicon rubber, stearic acid, zinc oxide, ferric oxide, graphitized carbon black, white carbon black, Diphenylsilanediol, triallylcyanurate and dicumyl peroxide in the mill and carry out mixingly, thin-pass can be played the glue slice 4 times after dicumyl peroxide added;
[0053]C, park and back mixing
Then film after mixing at room temperature carries out back mixing through parking, and mill is adopted in back mixing, treats the sizing material deliquescing, after smooth surface is smooth, can play the glue slice.
D, sulfuration
The mould sulfuration that film after the back mixing is put into vulcanizing press obtains vulcanizing sheet;
E, detection
After the sulfuration sheet is placed 16h at least, carry out correlated performance and detect.
Embodiment 12
A kind of cable preparation method of radiation hardness type semiconduction silicon rubber shielding material comprises following processing step:
A, weighing
It is stand-by to take by weighing raw material according to prescription, and the baking oven of graphitized carbon black being put into 104 ℃ heats 2.75h;
B, mixing
Add successively silicon rubber, stearic acid, zinc oxide, ferric oxide, graphitized carbon black, white carbon black, Diphenylsilanediol, triallylcyanurate and dicumyl peroxide in the mill and carry out mixingly, thin-pass can be played the glue slice 5 times after dicumyl peroxide added;
[0056]C, park and back mixing
Then film after mixing at room temperature carries out back mixing through parking, and mill is adopted in back mixing, treats the sizing material deliquescing, after smooth surface is smooth, can play the glue slice.
D, sulfuration
The mould sulfuration that film after the back mixing is put into vulcanizing press obtains vulcanizing sheet;
E, detection
After the sulfuration sheet is placed 16h at least, carry out correlated performance and detect.
Embodiment 13
On the basis of embodiment 9-12, preferred:
In step B, the roller speed ratio of described mill is 1:1.35.
In step B, described mixing temperature is 20 ℃.
In step C, the described storage period is 24 hours.
In step C, before described lower glue slice, rubber unvulcanizate is crossed roller 4 times in mill, the each mistake behind the roller along the vertical doubling of rubber unvulcanizate, and allow film always cross roller with same direction, and adjusting roll spacing, to make the thickness of extruded sheet be about 2.0mm.
In step D, the temperature of described sulfuration is 160 ℃, and curing time is 13min, and keeping cavity pressure between curing time is 3.5MPa.
Embodiment 14
On the basis of embodiment 9-12, preferred:
In step B, the roller speed ratio of described mill is 1:1.4.
In step B, described mixing temperature is 39 ℃.
In step C, the described storage period is 36 hours.
In step C, before described lower glue slice, rubber unvulcanizate is crossed roller 4 times in mill, the each mistake behind the roller along the vertical doubling of rubber unvulcanizate, and allow film always cross roller with same direction, and adjusting roll spacing, to make the thickness of extruded sheet be about 2.5mm.
In step D, the temperature of described sulfuration is 165 ℃, and curing time is 15min, and keeping cavity pressure between curing time is 5MPa.
Embodiment 15
On the basis of embodiment 9-12, preferred:
In step B, the roller speed ratio of described mill is 1:1.38.
In step B, described mixing temperature is 30 ℃.
In step C, the described storage period is 30 hours.
In step C, before described lower glue slice, rubber unvulcanizate is crossed roller 4 times in mill, the each mistake behind the roller along the vertical doubling of rubber unvulcanizate, and allow film always cross roller with same direction, and adjusting roll spacing, to make the thickness of extruded sheet be about 2.25mm.
In step D, the temperature of described sulfuration is 162 ℃, and curing time is 14min, and keeping cavity pressure between curing time is 4MPa.
Embodiment 16
On the basis of embodiment 9-12, preferred:
In step B, the roller speed ratio of described mill is 1:1.36.
In step B, described mixing temperature is 35 ℃.
In step C, the described storage period is 35 hours.
In step C, before described lower glue slice, rubber unvulcanizate is crossed roller 4 times in mill, the each mistake behind the roller along the vertical doubling of rubber unvulcanizate, and allow film always cross roller with same direction, and adjusting roll spacing, to make the thickness of extruded sheet be about 2.1mm.
In step D, the temperature of described sulfuration is 164 ℃, and curing time is 14.5min, and keeping cavity pressure between curing time is 4.5MPa.
Embodiment 17
The preparation of the semiconduction silicon rubber shielding material that the present invention relates to may further comprise the steps:
1, weighing.Take by weighing 100 parts in described silicon rubber, 20~40 parts of graphitized carbon blacks, 40~50 parts of white carbon blacks, 1.0~2.5 parts of vulcanizing agents, 2.0~3.0 parts of vulcanization aids, 5~15 parts of Diphenylsilanediols, 1.0~2.0 parts of stearic acid, 4~6 parts in zinc oxide, 2~5 parts of ferric oxide are stand-by.Require the weighing of vulcanizing agent should be accurate to 0.02g, the weighing of other each component should be accurate to ± and 1%.Graphitized carbon black will be regulated before weighing, was about to graphitized carbon black and put into 105 ± 5 ℃ baking oven and heat 2h.In regulate process, graphitized carbon black should be placed in the suitable container of the size of an opening, so that its ulking thickness is no more than 10mm.
2, mixing.Preferentially select the mill of roller speed ratio 1:1.35, roller must be connected with water coolant, and melting temperature should be below 40 ℃, to prevent the volatilization loss of incipient scorch or vulcanizing agent.Reinforced silicon rubber, small powder, graphitized carbon black, gas-phase silica, Diphenylsilanediol, vulcanizing agent and the vulcanization aid of being followed successively by smoothly.Thin-pass can be played the glue slice five times after vulcanizing agent and vulcanization aid added.Because silicon rubber is softer, can not resemble the thin slice of leaving behind the General Purpose Rubber during thin-pass, must adopt steel, nylon or wear-resistant plastic scraper to scrape.
3, park and back mixing.Film Ying Jing after mixing parking (generally being no less than 24 hours) after a while can fully be had an effect with rubber various Synergist S-421 95s (particularly constitution controller).After parking, the sizing material hardening, Plasticity Decreasing must carry out back mixing before using.Mill is adopted in back mixing, treats the sizing material deliquescing, after smooth surface is smooth, can play the glue slice.Before the lower glue, rubber unvulcanizate will be crossed roller four times in mill, the each mistake behind the roller along the vertical doubling of rubber unvulcanizate, and allow film always cross roller to obtain rolling effect with same direction.Adjusting roll spacing, to make the thickness of extruded sheet be about 2.5mm, with for the preparation of the dumbbell plate sample.Back mixing should at room temperature be carried out, the higher then sizing material of the temperature easy roll banding that is clamminess.
4, sulfuration.Film after the back mixing can be directly used in the sulfuration compressing tablet, and the mould that the film of the suitable size of cutting is put into vulcanizing press vulcanizes.Cure conditions is 160 ℃, and 15min keeps cavity pressure to be not less than 3.5MPa between curing time.
5, detect.After the sulfuration sheet is placed 16h at least, can carry out correlated performance and detect.
Embodiment 18
The test set prescription is shown in Table 1, and the preparation method sees above-mentioned preparation process.
Table 1 test set prescription
The performance of test set prescription products obtained therefrom is shown in Table 2:
Table 2 test set prescription products obtained therefrom performance
Figure 746025DEST_PATH_IMAGE002

Claims (10)

1. a cable is characterized in that: comprise following feed composition according to the parts by weight meter with radiation hardness semiconduction silicon rubber shielding material:
100 parts in silicon rubber
20~40 parts of graphitized carbon blacks
40~50 parts of white carbon blacks
1.0~2.5 parts of dicumyl peroxides
2.0~3.0 parts of cocuring agents
5~15 parts of Diphenylsilanediols
1.0~2.0 parts of stearic acid
4~6 parts in zinc oxide
2~5 parts of ferric oxide;
Described silicon rubber is phenylate support silicon rubber or phenylene silicone rubber; Described cocuring agent is triallylcyanurate.
2. a kind of cable according to claim 1 is with radiation hardness semiconduction silicon rubber shielding material, and it is characterized in that: described silicon rubber is phenylate support silicon rubber.
3. a kind of cable according to claim 1 is characterized in that with radiation hardness semiconduction silicon rubber shielding material: the moisture of described graphitized carbon black≤1.75%, and ash content≤1.75% is 0.35 Ω cm than resistance, the pH value is 7.4.
4. a kind of cable according to claim 1 is with radiation hardness semiconduction silicon rubber shielding material, and it is characterized in that: described white carbon black is thermal silica, dioxide-containing silica 〉=99%, pH value 3.7~4.5, oil-absorption(number) 3.46~3.60cm 3/ g, specific surface area 350~410m 2/ g.
5. a cable is characterized in that: comprise following processing step with the preparation method of radiation hardness type semiconduction silicon rubber shielding material:
A, weighing
It is stand-by to take by weighing raw material according to prescription, and the baking oven of graphitized carbon black being put into 100~105 ℃ heats 2~3h;
B, mixing
Add successively silicon rubber, stearic acid, zinc oxide, ferric oxide, graphitized carbon black, white carbon black, Diphenylsilanediol, triallylcyanurate and dicumyl peroxide in the mill and carry out mixingly, thin-pass can be played the glue slice 4~5 times after dicumyl peroxide added;
C, park and back mixing
Then film after mixing at room temperature carries out back mixing through parking, and mill is adopted in back mixing, treats the sizing material deliquescing, after smooth surface is smooth, can play the glue slice;
D, sulfuration
The mould sulfuration that film after the back mixing is put into vulcanizing press obtains vulcanizing sheet;
E, detection
After the sulfuration sheet is placed 16h at least, carry out correlated performance and detect.
6. a kind of cable according to claim 5 is with the preparation method of radiation hardness type semiconduction silicon rubber shielding material, and it is characterized in that: in step B, the roller speed ratio of described mill is 1:1.35~1:1.4.
7. a kind of cable according to claim 5 is with the preparation method of radiation hardness type semiconduction silicon rubber shielding material, and it is characterized in that: in step B, described mixing temperature is below 40 ℃.
8. a kind of cable according to claim 5 is with the preparation method of radiation hardness type semiconduction silicon rubber shielding material, and it is characterized in that: in step C, the described storage period is 24~36 hours.
9. a kind of cable according to claim 5 is with the preparation method of radiation hardness type semiconduction silicon rubber shielding material, it is characterized in that: in step C, before described lower glue slice, rubber unvulcanizate is crossed roller 4 times in mill, the each mistake behind the roller along the vertical doubling of rubber unvulcanizate, and allowing film always cross roller with same direction, it is about 2.0~2.5mm that the adjustment roll spacing makes the thickness of extruded sheet.
10. a kind of cable according to claim 5 is with the preparation method of radiation hardness type semiconduction silicon rubber shielding material, it is characterized in that: in step D, the temperature of described sulfuration is 160~165 ℃, and curing time is 13~15min, keeps cavity pressure to be not less than 3.5MPa between curing time.
CN2012105118867A 2012-12-04 2012-12-04 Semiconductive silicon rubber shielding material for radiation-resistant cable, and preparation method thereof Pending CN102964841A (en)

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CN103408943A (en) * 2013-07-01 2013-11-27 芜湖市银鸿液压件有限公司 Silicon rubber sealing ring for hydraulic braking system of automobile, and preparation method thereof
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Application publication date: 20130313