CN102957332A - Three-level power conversion device - Google Patents
Three-level power conversion device Download PDFInfo
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- CN102957332A CN102957332A CN2012102806600A CN201210280660A CN102957332A CN 102957332 A CN102957332 A CN 102957332A CN 2012102806600 A CN2012102806600 A CN 2012102806600A CN 201210280660 A CN201210280660 A CN 201210280660A CN 102957332 A CN102957332 A CN 102957332A
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Abstract
The present invention relates to a three-level power conversion device. In a buffer circuit of a dual switch of the prior three-level conversion circuit, as a voltage clamp type buffer cannot be used, buffer losses increase, and the device is large and the conversion efficiency is low as a plurality of switch components are needed in the buffer. The dual switch of the three-level power conversion device is composed of a first semiconductor switch series-connected circuit and a second semiconductor switch series-connected circuit which are connected in parallel, the first semiconductor switch series-connected circuit is series-connected with a first semiconductor switch and a second semiconductor switch which are reversely connected in parallel with a diode, the second semiconductor switch series-connected circuit is series-connected with a third semiconductor switch and a fourth semiconductor switch which are reversely connected in parallel, and the voltage clamp type buffer is connected with the first and second semiconductor switch or the third and fourth semiconductor switch in parallel.
Description
Technical field
The present invention relates to the DC-AC conversion equipment of three level or the circuit constructive method of AC-DC conversion equipment, and the surge voltage of thyristor suppresses technology.
Background technology
Figure 11 represents that the circuit of the prior art shown in the patent documentation 1 consists of.Figure 11 represents the amount of a phase of single-phase or polyphase inverter (inverter).At this, so-called inverter is the circuit that direct current power is converted to alternating electromotive force, but as well-known, also may be the action that alternating electromotive force is converted to direct current power.Below explanation is applicable to action, the function of two aspects.
The series circuit of the semiconductor switch (being IGBT:Integrated Gate Bipolar Transistor at this) 5 and 6 that DC power supply 1 and 2 series circuit, capacitor 3 and 4 series circuit and diode reverse are connected in parallel is connected in parallel.DC power supply 1 and being connected in series a little of being connected and capacitor 3 are connected with being connected in series of being connected, above-mentioned be connected in series a little with semiconductor switch 5 and 6 be connected in series a little between be connected bidirectional switch, above-mentioned bidirectional switch differential concatenation connects the semiconductor switch 7 and 8 that reverse parallel connection respectively is connected with diode.And the voltage clamp bit-type buffer that is made of diode 202, capacitor 201 and resistance 203 is connected in semiconductor switch 8.In such formation, DC power supply 1 and 2 voltage E1 and E2 are generally as identical value.Bidirectional switch can control forward/conducting of the electric current of reverse two directions/disconnection.
In Figure 11, the current potential that ac output end U the is ordered current potential that the anodal P of DC power supply is ordered during with semiconductor switch 5 conducting equates that the current potential that N is ordered during with semiconductor switch 6 conducting equates that the current potential that M is ordered during also with semiconductor switch 7 and 8 conducting equates.That is, this circuit is three kinds of voltage levels to be outputed to three level shifting circuits that U is ordered according to the conducting state of each semiconductor switch.This circuit is characterised in that, consist of bidirectional switch semiconductor switch 7,8 withstand voltage be semiconductor switch 5,6 withstand voltage 1/2nd just.Namely, when semiconductor switch 6 conducting, voltage E1+E2 between DC power supply PN is applied on the semiconductor switch 5, when semiconductor switch 5 conducting, similarly the voltage E1+E2 between DC power supply PN is applied on the semiconductor switch 6, relative therewith, when semiconductor switch 5 conducting, only the voltage E1 of DC power supply 1 is applied on the semiconductor switch 7, when semiconductor switch 6 conducting, only the voltage E2 of DC power supply 2 is applied on the semiconductor switch 8, does not have the pattern that applies DC power supply voltage E1+E2.
The buffer circuit example of Figure 11 is voltage clamp bit-type buffer, the be connected in parallel series circuit of capacitor 201 and diode 202 of itself and semiconductor switch 8, this be connected in series a little and the negative pole N of DC power supply between be connected with resistance 203.Capacitor 201 is connected to the two ends of DC power supply 2 by resistance 203, therefore to capacitor 201 stably with the voltage E2 charging of DC power supply 2.For example, semiconductor switch 8 blocks in the situation with the electric current of the diode of M point → distribution inductance 104 → semiconductor switch 8 → semiconductor switch 7 → path flow that distribution inductance 105 → U is ordered, electric current continues the path flow that diode → distribution inductance 105 → U is ordered with M point → distribution inductance 104 → capacitor 201 → diode 202 → semiconductor switch 7, and distribution inductance 104 is compared minimizing with 105 current changing rate with the situation that does not have buffer circuit.
At this moment, the both end voltage of semiconductor switch 8 equates with the voltage Vs1 of capacitor 201 substantially.By this action, capacitor 201 obtains charging, and voltage Vs1 is higher than the voltage E2 of DC power supply 2.At this moment, certain because of inductance or AC reactor (reactor) (all not shown) maintenance before and after switch of load from the electric current of U point outflow.Therefore, the electric current in above-mentioned path reduces relatively, and the diode current flow of semiconductor switch 6 supply with the electric current suitable with reducing part with the path that semiconductor switch 6 → distribution inductance 103 → U is ordered, so U point current potential equates with N point (negative pole) current potential roughly.Under this state, the voltage difference of the voltage Vs1 of capacitor 201 and the voltage E2 of DC power supply 2 is as reactance voltage is applied to distribution inductance 104,105, therefore the electric current in above-mentioned path reduces, soon become 0A, on the other hand, the electric current that flows by semiconductor switch 6 equates that with the output current of ordering from U the change of current finishes.
After this, discharge gently with the path of capacitor 201 → distribution inductance 104 → DC power supply 2 → resistance 203 → capacitor 201, the voltage Vs1 of capacitor 201 becomes the voltage E2 of DC power supply 2 again.This buffer is that people are known as voltage clamp bit-type RCD buffer.Diagram is omitted, and semiconductor switch 5 and 6 also can be suitable for same buffer.
On the other hand, for semiconductor switch 7, applicable voltage clamp bit-type RCD buffer is very difficult, and is very difficult for the protection of surge voltage.Its reason describes with reference to Figure 12.Figure 12 is the situation that voltage clamp bit-type RCD buffer is installed in semiconductor switch 7.In the action of semiconductor switch 5 and 7 alternate conduction, A point among the figure (semiconductor switch 7 and 8 tie point) equates with M point current potential, can carry out the action identical with Figure 11.
On the other hand, in the action of semiconductor switch 6 conductings, semiconductor switch 7 reverse conductings, the A point becomes N point current potential, therefore carries out the charging of capacitor 204 via resistance 206, and the voltage Vs2 of capacitor 204 rises to E1+E2.Again conducting semiconductor switch 7,8 o'clock, U point current potential is got back to M point current potential, via resistance 206, capacitor 204 discharges, so the voltage Vs2 of capacitor 204 is reduced to the voltage E1 of DC power supply 1.That is, the voltage Vs2 of capacitor 204 rises excessively, can not be with the limiting voltage of semiconductor switch 7 near the voltage E1 of DC power supply 1, by the charging and discharging of capacitor 204 repeatedly, produce very large loss.
As buffer circuit, take the action of large charging and discharging as prerequisite, known as people such as RC buffer etc., also go for occuring like this part of potential change, still, the general performance that suppresses surge voltage is inferior to voltage clamp bit-type buffer, and the loss that charging and discharging causes increases.Therefore, need the withstand voltage height of semiconductor switch, as mentioned above, withstand voltage withstand voltage 1/2nd just the advantages for the semiconductor switch between the PN that is connected to DC power supply that consist of the semiconductor switch of bidirectional switch suffer damage.
A kind of means as head it off have circuit shown in Figure 13.It is that buffer is applicable to the circuit shown in the patent documentation 3 of bidirectional switch section of three level shifting circuits shown in the patent documentation 2.In Figure 13, bidirectional switch section is made of semiconductor switch 9～12 and the capacitor 13 that reverse parallel connection respectively is connected with diode.With the series circuit of semiconductor switch 9 and 10, and the series circuit of semiconductor switch 11 and 12 is connected in parallel, and consists of bidirectional switch, and capacitor 13 and above-mentioned series circuit are connected in parallel forming circuit.
In the situation of conducting bidirectional switch section, the grid in semiconductor switch 9 and 11 or 10 and 12 applies Continuity signal.Not simultaneously conducting of semiconductor switch 9 and 10,11 and 12.As described later, this is the unnecessary discharge for fear of capacitor 13.
The action of this circuit then, is described.At first, become capacitor 13 because of the switch motion of last time, and be charged to the state of the voltage that equates with the voltage E2 of DC power supply 2.Electric current is for example with the path flow that diode → distribution inductance 105 → U is ordered of the M point of DC power supply → distribution inductance 104 → semiconductor switch 12 → semiconductor switch 10, when by the disconnection of semiconductor switch 12 electric current being blocked, electric current continues the path flow that diode → distribution inductance 105 → U is ordered with diode → capacitor 13 → semiconductor switch 10 of M point → distribution inductance 104 → semiconductor switch 11, capacitor 13 obtains charging, voltage rises, and current changing rate is inhibited simultaneously.At this moment, illustrate identically with Figure 11, the diode current flow of semiconductor switch 6, U point current potential roughly equate with N point current potential.The voltage difference of the voltage E2 of the voltage of capacitor 13 and DC power supply 2 is as being applied to distribution inductance 104 and 105 to reactance voltage, and therefore above-mentioned electric current reduces, and becomes soon 0A.
Then, when conducting semiconductor switch 10 and 11 grid, discharge in path with the diode of the negative pole N of capacitor 13 → semiconductor switch 11 → distribution inductance 104 → M point → DC power supply 2 → DC power supply → distribution inductance 101 → semiconductor switch 6 → distribution inductance 103 → U point → distribution inductance 105 → semiconductor switch 10 → capacitor 13, the lower voltage of capacitor 13 is to the voltage E2 of DC power supply 2.Noting discharging, (timing constantly), disconnects semiconductor switch 10 and 11 in the timing that finishes.In the circuit of Figure 12, (always) was connected with DC power supply section when discharge path was normal, relative therewith, in Figure 13 circuit, can be according to the conducting/off-state of semiconductor switch 9～12, management connects the timing (timing, time) of discharge path, therefore can avoid the such defective mode of Figure 12 circuit.
Have again, in this circuit, become semiconductor switch 9 and 10,11 and 12 formations that are connected in series.This is formed in the circuit for power conversion is the most general form, and pack into the module etc. of a packaging part (package) of tandem tap is also extensively sold on market.Can utilize such module also to can be used as advantage enumerates.In the situation of the circuit of Figure 11, because differential concatenation connects and composes and is not general type, so need to externally connect the module of two elements of packing into, maybe need to prepare special module.
But there is following shortcoming in the circuit of Figure 13.The voltage of capacitor 13 keeps substantially equating with the voltage E1 of DC power supply 1 or the voltage E2 of DC power supply 2 that when semiconductor switch 9 and 10 or 11 and 12 simultaneously conducting, capacitor 13 discharges into 0V and produces very large loss, and therefore this action is improper.Therefore, the conducting of bidirectional switch section by conducting semiconductor switch 9 and 11 or conducting 10 and 12 wherein a side carry out, do not carry out the action of whole conducting semiconductor switches 9～12.Namely, although this circuit is provided with bidirectional switch with two circuit parallel connections, once only use one party.Therefore, can not be with two in parallel uses as prerequisite, the current capacity of each semiconductor switch is reduced to 1/2nd, so the total capacity of semiconductor switch becomes large, cause that plant bulk maximizes price increase.
The prior art document
Patent documentation
[patent documentation 1] TOHKEMY 2010-288415 communique
[patent documentation 2] Japanese Patent Publication 63-38952 communique
[patent documentation 3] TOHKEMY 2000-358359 communique
Summary of the invention
The problem that invention will solve
As mentioned above, in the circuit of prior art consisted of, because not being suitable for voltage clamp bit-type buffer circuit, the buffering loss became large, in order to consist of buffer circuit, needs a plurality of switch elements etc., therefore has the problem that device maximizes, conversion efficiency is low.Therefore, problem of the present invention is, provides and can applicable circuit consist of three simple, as to lose little buffer circuit level power conversion equipments.
Be used for solving the method for problem
In order to solve above-mentioned problem, in the present invention's the first invention, relate to a kind of three level power conversion equipments, the DC power supply series circuit is connected in series with the first DC power supply and the second DC power supply, the semiconductor switch series circuit is connected in series with the semiconductor switch that reverse parallel connection respectively has diode, described DC power supply series circuit and described semiconductor switch series circuit are connected in parallel, above-mentioned DC power supply series circuit be connected in series a little and above-mentioned semiconductor switch series circuit be connected in series a little between, be connected with the bidirectional switch that to control bidirectional current conducting/disconnection, above-mentioned bidirectional switch is made of the parallel circuits of the first semiconductor switch series circuit and the second semiconductor switch series circuit, described the first semiconductor switch series circuit is connected in series with respectively first and second semiconductor switch of reverse parallel connection connection diode, described the second semiconductor switch series circuit is connected in series with respectively the 3rd and the 4th semiconductor switch of reverse parallel connection connection diode, with above-mentioned first and second semiconductor switch or the above-mentioned the 3rd and the 4th semiconductor switch voltage clamp bit-type buffer that is connected in parallel, above-mentioned voltage clamp bit-type buffer with the both end voltage clamper of semiconductor switch at above-mentioned first or second DC power supply voltage.
Inventing in the present invention second is in three level power conversion equipments of above-mentioned the first invention, during above-mentioned bidirectional switch cut-off current, with respect to the cut-off signal of supplying with to the control terminal of the semiconductor switch of the above-mentioned voltage clamp bit-type buffer of the current flowing that is not connected in parallel, the cut-off signal of supplying with to the control terminal of the semiconductor switch of the above-mentioned voltage clamp bit-type buffer that is connected in parallel to current flowing is delayed supply.
Inventing in the present invention the 3rd is in three level power conversion equipments of the above-mentioned first or second invention, the module that is built-in with the module of above-mentioned the first semiconductor switch series circuit and be built-in with above-mentioned the second semiconductor switch series circuit is connected in parallel respectively when a plurality of, will be built-in with the module of above-mentioned the first semiconductor switch series circuit and be built-in with the alternately configuration in parallel of module of above-mentioned the second semiconductor switch series circuit.
In above-mentioned the first to the 3rd invention in any described three level power conversion equipment in the present invention the 4th invention, the semiconductor switch of the above-mentioned part that is connected in series or consist of its part or all of semiconductor element is accommodated in the same module by respectively being connected in series part.
In above-mentioned first to fourth invention in any described three level power conversion equipment in the present invention the 5th invention, adopt following diode: the forward drop-out voltage of the diode that is connected with the semiconductor switch reverse parallel connection of the above-mentioned voltage clamp bit-type buffer that is connected in parallel, the forward drop-out voltage of the diode that is connected than the semiconductor switch reverse parallel connection with the above-mentioned voltage clamp bit-type buffer that is not connected in parallel is high.
The present invention the 6th invention is in above-mentioned the first to the 5th invention in any described three level power conversion equipment, adopt the diode of following characteristic: the reverse recovery current of the diode that is connected with the semiconductor switch reverse parallel connection of the above-mentioned voltage clamp bit-type buffer that is connected in parallel, the reverse recovery current of the diode that is connected than the semiconductor switch reverse parallel connection with the above-mentioned voltage clamp bit-type buffer that is not connected in parallel is little.
In the present invention's the 7th invention, relate to a kind of three level power conversion equipments, the DC power supply series circuit is connected in series with the first DC power supply and the second DC power supply, the first semiconductor switch series circuit sequentially is connected in series respectively according to the first～the 4th semiconductor switch, and reverse parallel connection is connected with first of diode～the 4th semiconductor switch, described DC power supply series circuit and described the first semiconductor switch series circuit are connected in parallel, with being connected in series a little as ac terminal of above-mentioned the second semiconductor switch and above-mentioned the 3rd semiconductor switch, the second semiconductor switch series circuit is connected in series with the 5th and the 6th semiconductor switch that reverse parallel connection respectively is connected with diode, described the second semiconductor switch series circuit is connected in parallel the series circuit of above-mentioned the second semiconductor switch and above-mentioned the 3rd semiconductor switch, being connected in series a little and being connected the connection that is connected in series of DC power supply series circuit of above-mentioned the second semiconductor switch series circuit, at above-mentioned the 5th semiconductor switch and the 6th semiconductor switch, being provided with the voltage clamping that will be applied to these above-mentioned semiconductor switchs is the so-called voltage clamp bit-type buffer of the first DC power supply voltage or the second DC power supply voltage, and do not arrange and above-mentioned the second semiconductor switch and the direct-connected buffer of above-mentioned the 3rd semiconductor switch, or the setting buffer fully little with above-mentioned voltage clamp bit-type buffer phase specific capacity, when above-mentioned the first and second semiconductor switchs of conducting when above-mentioned ac terminal is exported positive voltage, above-mentioned the third and fourth semiconductor switch of conducting when exporting negative voltage, respectively conducting above-mentioned second when the output no-voltage, the 3rd, the the 5th and the 6th semiconductor switch, when moving on to positive voltage output from no-voltage output, carry out at first above-mentioned the 3rd semiconductor switch being applied cut-off signal, then the above-mentioned the 5th and the 6th semiconductor switch is applied cut-off signal, after this above-mentioned the first semiconductor switch is applied the action of Continuity signal, when moving on to negative voltage output from no-voltage output, carry out at first above-mentioned the second semiconductor switch being applied cut-off signal, then the above-mentioned the 5th and the 6th semiconductor switch is applied cut-off signal, after this 4th semiconductor switch is applied the action of Continuity signal.
The present invention's the 8th invention is in three level power conversion equipments of above-mentioned the 7th invention, the above-mentioned first and the 4th semiconductor switch is made of a branch road built-in module, above-mentioned second and third semiconductor switch is made of two branch road built-in modules, the the above-mentioned the 5th and the 6th semiconductor switch is made of two branch road built-in modules, when being connected in parallel above-mentioned each module, be built-in with near configuration above-mentioned second and third semiconductor switch two path built-ins module and be built-in with the above-mentioned the 5th and the module of two path built-ins of the 6th semiconductor switch.
The present invention's the 9th invention is in three level power conversion equipments of above-mentioned the 7th invention, above-mentioned first and second semiconductor switch, the the above-mentioned the 3rd and the 4th semiconductor switch, the the above-mentioned the 5th and the 6th semiconductor switch consists of with two branch road built-in modules respectively, when being connected in parallel above-mentioned each module, be built-in with the above-mentioned the 5th and the block configuration of the 6th semiconductor switch the module that is built-in with above-mentioned first and second semiconductor switch and be built-in with the above-mentioned the 3rd and the module of the 4th semiconductor switch between.
The present invention's the tenth invention is in above-mentioned the 7th to the 9th any described three level power conversion equipment of invention, above-mentioned second, third, the 5th, the 6th semiconductor switch is respectively equipped with parallel diode, the forward drop-out voltage of the parallel diode of above-mentioned second and third semiconductor switch, than the above-mentioned the 5th and the forward drop-out voltage of the parallel diode of the 6th semiconductor switch high.
The present invention's the 11 invention is in above-mentioned the 7th to the tenth any described three level power conversion equipment of invention, adopt the diode of following characteristic: the reverse recovery current of the parallel diode of above-mentioned second and third semiconductor switch, than the above-mentioned the 5th and the reverse recovery current of the parallel diode of the 6th semiconductor switch little.
The following describes effect of the present invention:
In the present invention, the bidirectional switch of three level power conversion equipments of use bidirectional switch is made of the parallel circuits of the first semiconductor switch series circuit and the second semiconductor switch series circuit, described the first semiconductor switch series circuit is connected in series with first and second semiconductor switch that reverse parallel connection respectively is connected with diode, described the second semiconductor switch series circuit is connected in series with the 3rd and the 4th semiconductor switch that reverse parallel connection respectively is connected with diode, with above-mentioned first and second semiconductor switch or the above-mentioned the 3rd and the 4th semiconductor switch voltage clamp bit-type buffer that is connected in parallel, above-mentioned voltage clamp bit-type buffer with the both end voltage clamper of thyristor at the above-mentioned first or second DC power supply voltage.In addition, when being connected in parallel above-mentioned semiconductor switch series circuit, alternate configurations is provided with the series circuit of voltage clamp bit-type buffer and the series circuit of buffer is not set.
In addition, in three level power conversion equipments of neutral point clamper type, semiconductor switch and neutral point clamper are connected in parallel with diode reverse, at each switch voltage clamp bit-type buffer are set, do not need buffer maybe can make its minimization at the semiconductor switch that is connected in parallel with it thus.
Consequently, can be suitable for voltage clamp bit-type buffer, reduce the buffer circuit loss, so that the bidirectional switch circuit is oversimplified, can realize three small-sized level power conversion equipments with low loss.
Description of drawings
Fig. 1 is the circuit diagram of expression first embodiment of the invention.
Fig. 2 is the circuit diagram of expression second embodiment of the invention.
Fig. 3 is the distribution structure figure of expression third embodiment of the invention.
Fig. 4 is the circuit diagram for the prior art of explanation fourth embodiment of the invention.
Fig. 5 is the circuit diagram of expression fourth embodiment of the invention.
Fig. 6 is the circuit diagram for the explanation fifth embodiment of the invention.
Fig. 7 is the structure chart for the explanation fifth embodiment of the invention.
Fig. 8 is the circuit diagram for the explanation sixth embodiment of the invention.
Fig. 9 is the structure chart for the explanation sixth embodiment of the invention.
Figure 10 represents the example of semiconductor module.
Figure 11 is the circuit diagram of the first embodiment of expression prior art.
Figure 12 is the circuit diagram for the problem of the second embodiment of explanation prior art.
Figure 13 is the circuit diagram of the 3rd embodiment of expression prior art.
Symbolic significance is as follows among the figure:
1,2-DC power supply
20,21,202,205,207,208-diode
3,4,13,201,204,209,210-capacitor
5～12-semiconductor switch (IGBT)
13～18-MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET: mos field effect transistor)
203,206,211,212-resistance
207a～207d-buffer module
15a～15d, 17a～17d, MD3, MD4-semiconductor module (two branch roads in the module)
MD1, MD2-semiconductor module (branch road in the module)
300～303, UB1, UB2, UPB1, UPB2, UNB1, UNB2-DP distributing pole (bar)
Embodiment
Below, with reference to the description of drawings embodiment of the invention, in following examples, although to inscape, kind, combination, the position, shape, quantity, configuration waits and has done various restrictions relatively,, these only exemplify, and the present invention is not limited thereto.
Main points of the present invention are as follows:
The first main points are as follows: relate to three level power conversion equipments, DC power supply series circuit and semiconductor switch series circuit are connected in parallel, described DC power supply series circuit is connected in series with DC power supply, described semiconductor switch series circuit is connected in series with semiconductor switch, with bidirectional switch be connected to being connected in series a little of above-mentioned DC power supply series circuit and above-mentioned semiconductor switch series circuit be connected in series a little between, above-mentioned bidirectional switch is made of the parallel circuits of the first semiconductor switch series circuit and the second semiconductor switch series circuit, described the first semiconductor switch series circuit is connected in series with first and second semiconductor switch that reverse parallel connection respectively is connected with diode, and described the second semiconductor switch series circuit is connected in series with the 3rd and the 4th semiconductor switch that reverse parallel connection respectively is connected with diode.Be connected in parallel the voltage clamp bit-type buffer of the both end voltage clamper (clamp) of the semiconductor switch DC power supply voltage to above-mentioned first or second with above-mentioned first and second semiconductor switch or the 3rd and the 4th semiconductor switch.
The second main points are as follows: DC power supply series circuit and the first semiconductor switch series circuit are connected in parallel, described DC power supply series circuit is connected in series with the first DC power supply and the second DC power supply, described the first semiconductor switch series circuit sequentially is connected in series with respectively according to the first～the 4th semiconductor switch, and reverse parallel connection is connected with first of diode～the 4th semiconductor switch, with being connected in series a little as ac terminal of above-mentioned the second semiconductor switch and above-mentioned the 3rd semiconductor switch, the second semiconductor switch series circuit is connected in series with the 5th and the 6th semiconductor switch that reverse parallel connection respectively is connected with diode, be connected in this second semiconductor switch series circuit the series circuit of above-mentioned the second semiconductor switch and above-mentioned the 3rd semiconductor switch in parallel, connect being connected in series a little of above-mentioned the second semiconductor switch series circuit and being connected in series a little of above-mentioned DC power supply series circuit.At above-mentioned the 5th semiconductor switch and the 6th semiconductor switch, be provided with so-called voltage clamp bit-type buffer, the voltage clamping that is applied to above-mentioned semiconductor switch to the voltage of the first DC power supply or the voltage of the second DC power supply, and is not established and buffer that above-mentioned the second semiconductor switch and the direct-connected buffer of above-mentioned the 3rd semiconductor switch or setting and above-mentioned voltage clamp bit-type buffer phase specific capacity are fully little.When above-mentioned first and second semiconductor switch of conducting when above-mentioned ac terminal is exported positive voltage, conducting the above-mentioned the 3rd and the 4th semiconductor switch when exporting negative voltage.When output during no-voltage respectively conducting above-mentioned second, third, the 5th and the 6th semiconductor switch, when moving on to positive voltage output from no-voltage output, at first above-mentioned the 3rd semiconductor switch is applied cut-off signal, then the above-mentioned the 5th and the 6th semiconductor switch is applied cut-off signal, after this above-mentioned the first semiconductor switch is applied Continuity signal.When moving on to negative voltage output from no-voltage output, at first above-mentioned the second semiconductor switch is applied cut-off signal, then the above-mentioned the 5th and the 6th semiconductor switch is applied cut-off signal, after this 4th semiconductor switch is applied Continuity signal.
[embodiment 1]
Fig. 1 represents first embodiment of the invention.The formation of integrated circuit is in the circuit of prior art shown in Figure 6, removes capacitor 13, and voltage clamp bit-type buffer is connected to semiconductor switch 11 and 12.At this, as semiconductor switch, be the embodiment that uses IGBT.In Fig. 1, the series circuit of diode 207 and capacitor 209 is parallel-connected to semiconductor switch 11, diode 207 and capacitor 209 be connected in series a little and the positive pole (P point) of DC power supply 1 between contact resistance 211.And the series circuit of diode 208 and capacitor 210 is parallel-connected to semiconductor switch 12, diode 208 and capacitor 210 be connected in series a little and the negative pole (N point) of DC power supply 2 between contact resistance 212.In addition, symbol 106, the 107th, the distribution inductance of bidirectional switch section inside.
In this circuit, during conducting bidirectional switch section, while conducting semiconductor switch 9～12.For example, the current path of ordering to U from the M point, existence is from the path that diode → distribution inductance 106 → semiconductor switch 9 → distribution inductance 105 → U is ordered of M point → distribution inductance 104 → semiconductor switch 11, and from the path that diode → distribution inductance 105 → U is ordered of M point → distribution inductance 104 → semiconductor switch 12 → distribution inductance 107 → semiconductor switch 10, each flows 1/2nd electric current.The protection action for surge voltage when disconnecting semiconductor switch 12 is identical with the explanation of background technology.
On the other hand, when disconnecting semiconductor switch 9, the electric current of distribution inductance 106 sharply reduces, the electric current of the amount that reduces increases in the path of the diode of distribution inductance 104 → capacitor 210 → diode 208 → distribution inductance 107 → semiconductor switch 10, therefore the electric current of distribution inductance 107 sharply increases, and is applied on the semiconductor switch 9 with the proportional voltage of this current changing rate.But, even for this electric current composition, also can suppress distribution inductance 104,105 rate of change, therefore suppress the surge voltage that causes thus.Therefore, if distribution inductance 106,107 inductance value are fully little, then be applied to the surge voltage of semiconductor switch 9, namely (voltage of the voltage of the voltage of capacitor 210+distribution inductance 106+distribution inductance 107) can be suppressed in the allowed band.
In other words, at this moment the buffer that is equivalent to semiconductor switch 12 is connected in semiconductor switch 9 in parallel by distribution inductance 106, semiconductor switch 11,10, distribution inductance 107, although the increase part of the surge voltage that distribution inductance 106,107 causes is arranged, and the surge voltage of semiconductor switch 9 also is inhibited because of the buffer of semiconductor switch 12.And the cut-off current of semiconductor switch 9 is 1/2nd of load current, and is therefore favourable to suppressing surge voltage.
Even now surpasses in the situation of permissible value in the surge voltage of semiconductor switch 9, can be by following method avoidance.When disconnecting bidirectional switch section, semiconductor switch 9 is disconnected first than other semiconductor switch.Consequently, although produce voltage at distribution inductance 106,107, because semiconductor switch 12 conductings, so surge voltage is (voltages of the voltage of distribution inductance 106+107), than above-mentioned decrease.Then, disconnect semiconductor switch 12.Until disconnect semiconductor switch 12 during, the total current that in the path of the diode of semiconductor switch 12 → semiconductor switch 10, flows, but since the time short, so it is little of unquestioned degree to generate heat.In addition, semiconductor switch 12 blocks total current, but at approaching place buffer is arranged, so surge voltage also can suppress.
[embodiment 2]
Fig. 2 represents second embodiment of the invention.Fig. 2 is the example that uses MOSFET at semiconductor switch.Main circuit consists of and buffer consists of identical with Fig. 1.Identical with Fig. 1, when conducting bidirectional switch part, simultaneously conducting MOSFET15～18.Under the MOSFET conducting state, has the proportional resistance characteristic of voltage drop and electric current.The characteristic that also has reverse also conducting when applying grid voltage.Therefore, at the little MOSFET of conducting resistance, for example super in conjunction with (Super Junction) MOSFET or by SiC(carborundum) among the MOSFET that forms, compare with the forward drop of parallel diode (parasitic diode or external diode), determine that by the voltage drop of MOSFET body revers voltage falls.In the circuit of Fig. 1, although bidirectional switch section carries out two side by side actions, no matter in which path, as voltage drop, the amount that the forward drop of amount+diode that the saturation voltage of generation IGBT is is.The saturation voltage of IGBT, the forward drop of diode have the constant voltage composition that does not rely on electric current, therefore in two move side by side, although minimizing falls in total voltage, can not become 1/2nd.
On the other hand, in Fig. 2 circuit, the series circuit of two MOSFET becomes two and is connected in parallel, therefore because above-mentioned resistance characteristic, total voltage is reduced to the amount of one of MOSFET, is namely become in the bidirectional switch 1/2nd in a side the situation among the conducting MOSFET15 and 17 or 16 and 18, and the conducting loss also becomes 1/2nd.Otherwise, consider above-mentioned situation, the conducting resistance that can select MOSFET15～18 is two times, namely energising chip area partly is a side of 1/2nd.Therefore, the bidirectional switch of Figure 11 consists of relatively, seems that parts number doubles, but total semiconductor amount does not change.
[embodiment 3]
Fig. 3 represents third embodiment of the invention.The distribution inductance 106 of Fig. 3 presentation graphs 1 or Fig. 2,107 methods to reduce noises.Fig. 3 (a) is the formation of semiconductor module as used herein, become with two series connection MOSFET(IGBT or other semiconductor chip also can) structure be accommodated in the formation of a packaging part.Fig. 3 (b) is its configuration and wiring method, and 15a～15d is the MOSFET15 of Fig. 2, the module of 16 parts, and 17a～17d is the MOSFET17 of Fig. 2, the semiconductor module of 18 parts, is connected in parallel respectively four at this.
And 207a～207d is the buffer module that diode 207 and capacitor 209 and diode 208 and capacitor 210 is accommodated in a module, 300～303rd, and DP distributing pole (bar).The 300th, the DP distributing pole of the P terminal of eight modules that are connected in parallel, the 301st, the DP distributing pole of the N terminal of eight modules that are connected in parallel, the 302nd, the DP distributing pole of the U terminal of the module that do not connect buffer of being connected in parallel four, the 303rd, the DP distributing pole of the AC terminal of the module that is connected with buffer 207a～207d of being connected in parallel four.DP distributing pole 303 is connected with the M point of DC power supply, and DP distributing pole 302 is connected with the interchange end U point of change-over circuit.About overlapping part ( DP distributing pole 300 and 301, DP distributing pole 302 and 303) about the DP distributing pole of module, by not shown insulating material is sandwiched in therebetween, avoid short circuit.
The module of the module by alternate configurations MOSFET15,16 sides and MOSFET17,18 sides makes from MOSFET15,16 side form pieces and is respectively the shortest to the distance of buffer, minimizes by making the distribution inductance, suppresses surge voltage.Moreover, have each other lap by making DP distributing pole, so that the magnetic flux that produces separately when current flowing is cancelled each other, compare with the situation of DP distributing pole individualism, can significantly reduce its inductance.This is the known methods of people.
But, produce surge voltage except when semiconductor switch disconnects, when diode reverse recovery, also have.For example, consider the situation that electric current flows out from the U point in Fig. 2 circuit.When conducting MOSFET13, electric current with path flow that MOSFET13 → distribution inductance 102 → U is ordered to the outside.When MOSFET13 disconnects, by conducting MOSFET15 and 18 in advance, electric current is with the path that M point → distribution inductance 104 → MOSFET17 → distribution inductance 106 → MOSFET15 → distribution inductance 105 → U is ordered, and the path flow that M point → distribution inductance 104 → MOSFET18 → distribution inductance 107 → MOSFET16 → distribution inductance 105 → U is ordered.At this moment, as mentioned above, give Continuity signal to whole grids of MOSFET15～18, electric current is all in the MOSFET bulk flow.Then, again in the situation of conducting MOSFET13, give cut-off signal (so-called Dead Time (dead time) is set) to the grid of MOSFET16 and 17 in advance.But this be since when MOSFET16,17 under the state of forward conducting during conducting MOSFET13, in MOSFET13,15,17 and 13,16,18 so that the cause of DC power supply 1 short circuit.Therefore, in this time, MOSFET16,17 electric current are in the parallel diode side flow.
By conducting MOSFET13, MOSFET16,17 parallel diode are partly applied back voltage, cut-off current.Generally, if apply back voltage when diode flows forward current, then short-time current (reverse recovery current) blocks after reverse flow, produces so-called reverse recovery phenomena.In above-mentioned situation, electric current is with the contrary conducting of MOSFET13 → distribution inductance 102 → distribution inductance 105 → MOSFET16(diode) → path that distribution inductance 107 → MOSFET18 → distribution inductance 104 → M is ordered, and the contrary conducting of MOSFET13 → distribution inductance 102 → distribution inductance 105 → MOSFET15 → distribution inductance 106 → MOSFET17(diode) → and path flow that distribution inductance 104 → M is ordered, the diode of MOSFET16 and the diode of MOSFET17 block this electric current.
At this moment, when disconnecting (turn-off) semiconductor switch, produce surge voltage at the distribution inductance equally.Suppress with the buffer that approaches for the surge voltage of MOSFET17, but it is large for the surge voltage ratio of MOSFET16.Blocking of diode can not the control time at grid, therefore can not block in advance MOSFET16 as mentioned above.About MOSFET15 too.So, reduce surge voltage with following methods.
First method is larger than the forward drop of the parallel diode of MOSFET17 and 18 by the forward drop of the parallel diode that makes MOSFET15 and 16, makes electric current concentrate on MOSFET17 or 18 sides in Dead Time.When forward current diminished or become 0A, reverse recovery current also diminished or disappears, and therefore can avoid because of the above-mentioned surge voltage that causes of blocking.
Second method is to compare with the parallel diode of MOSFET17 and 18, uses the little side of reverse recovery current in the parallel diode of MOSFET15 and 16.
In fact, the diode that reverse recovery current is little has the large tendency of forward drop, therefore mostly also with first method and second method.
[embodiment 4]
Fig. 5 represents fourth embodiment of the invention.As the three-level inverter circuit, the circuit that is called neutral point pincers type shown in Figure 4 is known for people. DC power supply 1 and 2 series circuit and the series circuit of semiconductor switch (IGBT) 5,9,10,6 are connected in parallel, and, between the tie point of these two tie points of tie point of the tie point of semiconductor switch 5 and 9 and 10 and 6 and DC power supply 1 and 2, connect respectively diode 20 or 21. Capacitor 3 and 4 is also referred to as voltage-dividing capacitor.
In Fig. 5, at U point output P point current potential, export M point current potential conducting semiconductor switch 9 and at U point conducting semiconductor switch 5 and at 10 o'clock at 9 o'clock, export N point current potential conducting semiconductor switch 6 and at the U point at 10 o'clock.Therefore at this, semiconductor switch 9 all is connected with potential change point with the two ends of being connected, and is difficult to applicable clamper at the buffer as the voltage of the capacitor 3 of DC power supply or 4.In the past, use such as the RC buffer of the such charging/discharging type that represents in the TOHKEMY 2003-52178 communique etc.
Fig. 5 represents the relatively Application Example of the present invention of this circuit formation.Be provided with semiconductor switch 11,12, the diode 20,21 that replaces Fig. 4, the voltage clamp bit-type buffer that is made of diode 207, capacitor 209 and resistance 211 is connected with semiconductor switch 11, and the voltage clamp bit-type buffer that is made of diode 208, capacitor 210 and resistance 212 is connected with semiconductor switch 12.
Below explanation action.When U point current potential is equated with M point current potential, semiconductor switch 9,10,11,12 whole conductings.Flow to from the U point the pattern that M orders at electric current, current distributing is the path of ordering by diode → semiconductor switch 11 → M of U point → semiconductor switch 9, and the path of ordering by the diode → M of U point → semiconductor switch 10 → semiconductor switch 12.
Move on to for example state of semiconductor switch 5 and 9 conductings from this state, in the situation of U point output P current potential (E1), at first the cut-off semiconductor switch 10.At this moment, semiconductor switch 11 is conducting state, so semiconductor switch 10 can block to apply voltage 0V.As its result, press the electric current change of current of path flow of diode of semiconductor switch 10 → semiconductor switch 12 to the path of the diode → semiconductor switch 11 of semiconductor switch 9.Then, disconnect semiconductor switch 11,12.At this moment; become that voltage is applied to semiconductor switch 11 between P-M; and two times of electric currents of cut-off semiconductor switch 10, but owing to be provided with the voltage clamp bit-type buffer that is made of diode 207, capacitor 209 and resistance 211 at approaching place, therefore protection avoids being subjected to surge voltage to damage.
In addition, conducting semiconductor switch 9～12 is described, moves on to semiconductor switch 10,6 conducting states from the U point for the state of zero potential, at the U point output N current potential (E2) example in the situation.The pattern that electric current flows from the M point to the U point, current distributing is the path of ordering by diode → semiconductor switch 9 → U of M point → semiconductor switch 11, and the path of ordering by the diode → U of M point → semiconductor switch 12 → semiconductor switch 10.Under this state, at first disconnect semiconductor switch 9.At this moment, because semiconductor switch 12 is conducting state, so semiconductor switch 9 can disconnect to apply voltage 0V.As its result, press the electric current change of current of path flow of diode → semiconductor switch 9 of semiconductor switch 11 to the path of the diode of semiconductor switch 12 → semiconductor switch 10.Then, disconnect semiconductor switch 11,12.At this moment; become that voltage is applied to semiconductor switch 12 between M-N; and two times of electric currents of cut-off semiconductor switch 9, but owing to be provided with the voltage clamp bit-type buffer that is consisted of by diode 208, capacitor 210 and resistance 212 at approaching place, therefore can protect and avoid being subjected to surge voltage to damage.About beyond above-mentioned other pattern too, semiconductor switch avoids being subjected to surge voltage to damage by the protection of voltage clamp bit-type buffer.
Identical with Fig. 2, semiconductor switch can use MOSFET.In addition, for the reverse recovery action of the parallel diode of semiconductor switch 9～12, same as described above, by between semiconductor switch 9 and 10,11 and 12, it is poor that the forward drop-out voltage of diode is had, or it is poor that reverse recovery current is had, and can bring into play identical effect.
[embodiment 5]
Fig. 6 and Fig. 7 represent fifth embodiment of the invention.Use the semiconductor module that is built-in with a branch road (arm) shown in two kinds of semiconductor module: Figure 10 (a) (branch road in a module); And the semiconductor module that is built-in with two branch roads shown in Figure 10 (b) (two branch roads in a module).Configuration and distribution structure for the semiconductor switch of realizing three level power conversion equipments are proposed.In the circuit diagram of Fig. 6, semiconductor switch 5 and 6 is made of the semiconductor module MD1, the MD2 that are built-in with a branch road respectively.And semiconductor switch 9 and 10 is made of the semiconductor module MD3 that is built-in with two branch roads, and semiconductor switch 11 and 12 is made of the semiconductor module MD4 that is built-in with two branch roads.
Configuration when Fig. 7 represents to be connected in parallel three each semiconductor modules and distribution structure example.At this, MD1a～MD1c and MD2a～MD2c are the semiconductor modules that is built-in with a branch road, and MD3a～MD3c and MD4a～MD4c are the semiconductor modules that is built-in with two branch roads, and 207a～207c is voltage clamp bit-type buffer.And UB1 is the ac terminal DP distributing pole, and UPB1, UNB1 are the DP distributing poles of neutral point clamping diode circuit, and MB1 is the DP distributing pole of zero utmost point.About overlapping part (DP distributing pole UB1 and MB1, DP distributing pole UPB1 and UNB1) about the DP distributing pole of module, by not shown insulating material is sandwiched in therebetween, avoid short circuit.In order to reduce the distribution inductance between module MD3a and the MD4a, effectively suppress surge voltage, the MD4a and the module MD3a that are connected with buffer 207a approach configuration.The formation of module MD3b, MD4b and buffer 207b is also identical with the formation of module MD3c, MD4c and buffer 207c.
[embodiment 6]
Fig. 8 and Fig. 9 represent sixth embodiment of the invention.Use the semiconductor module that is built-in with two branch roads (two branch roads in a module) shown in Figure 10 (b), propose configuration and distribution structure for the semiconductor switch of realizing three level power conversion equipments.In Fig. 8, MD5～MD7 is the semiconductor module (two branch roads in a module) that is built-in with the semiconductor switch of two branch road parts.Block configuration and distribution structure when Fig. 9 represents to be connected in parallel three each semiconductor modules.MD5a～MD5c, MD6a～MD6c, MD7a～MD7c are the semiconductor module that is built-in with two branch roads shown in Figure 10 (b) (two branch roads in a module), and 207a～207c is voltage clamp bit-type buffer.And UB2 is the ac terminal DP distributing pole, and UPB2, UNB2 are the DP distributing poles of neutral point clamping diode circuit, and MB2 is the DP distributing pole of zero utmost point, connects each semiconductor module that is connected in parallel.In order to reduce the distribution inductance, effectively suppress surge voltage, the semiconductor module MD7a that is connected with buffer 207a is configured between semiconductor module MD6a and the MD5a.The formation of module MD7b, MD6b and MD5b is also identical with the formation of module MD7c, MD6c and MD5c.
In the above-described embodiments, the example of phase part of expression inverter circuit (inverse conversion circuit) or converter circuit (PWM rectification circuit), if but foregoing circuit is used two circuit, can consist of the two-phase device, if use three-circuit, can consist of three-phase installation.
The following describes the present invention in industrial utilizability:
The present invention is in the high situation of direct voltage or require the three level power conversion equipments that use in the situation of high voltage as alternating voltage, can be applicable to uninterrupted power supply(ups), and motor-driven is with conversion equipment etc.
The above is with reference to the accompanying drawings of example of the present invention, but the present invention is not limited to above-mentioned example.Can do all changes in the technology of the present invention thought range, they all belong to protection scope of the present invention.
Claims (11)
1. level power conversion equipment, the DC power supply series circuit is connected in series with the first DC power supply and the second DC power supply, the semiconductor switch series circuit is connected in series with the respectively semiconductor switch of reverse parallel connection diode, described DC power supply series circuit and described semiconductor switch series circuit are connected in parallel, with being connected in series a little as ac terminal of described semiconductor switch series circuit, described DC power supply series circuit be connected in series a little and described semiconductor switch series circuit be connected in series a little between, be connected with the bidirectional switch that can control bidirectional current conducting/disconnection, described three level power conversion equipments are characterised in that:
Described bidirectional switch is made of the parallel circuits of the first semiconductor switch series circuit and the second semiconductor switch series circuit, described the first semiconductor switch series circuit is connected in series with respectively the first and second semiconductor switchs of reverse parallel connection connection diode, described the second semiconductor switch series circuit is connected in series with respectively the third and fourth semiconductor switch of reverse parallel connection connection diode, with described the first and second semiconductor switchs or described the third and fourth semiconductor switch voltage clamp bit-type buffer that is connected in parallel, described voltage clamp bit-type buffer with the both end voltage clamper of semiconductor switch at described first or second DC power supply voltage.
2. three level power conversion equipments according to claim 1 is characterized in that:
During described bidirectional switch cut-off current, with respect to the cut-off signal of supplying with to the control terminal of the semiconductor switch of the described voltage clamp bit-type buffer of the current flowing that is not connected in parallel, the cut-off signal of supplying with to the control terminal of the semiconductor switch of the described voltage clamp bit-type buffer of the current flowing that is connected in parallel is delayed supply.
3. three level power conversion equipments according to claim 1 and 2 is characterized in that:
The module that is built-in with the module of described the first semiconductor switch series circuit and be built-in with described the second semiconductor switch series circuit is connected in parallel respectively when a plurality of, will be built-in with the module of described the first semiconductor switch series circuit and be built-in with the alternately configuration in parallel of module of described the second semiconductor switch series circuit.
4. any described three level power conversion equipment according to claim 1～3 is characterized in that:
The semiconductor switch of the described part that is connected in series or consist of its part or all of semiconductor element is accommodated in the same module by respectively being connected in series part.
5. any described three level power conversion equipment according to claim 1～4 is characterized in that:
Adopt following diode: the forward drop-out voltage of the diode that is connected with the semiconductor switch reverse parallel connection of the described voltage clamp bit-type buffer that is connected in parallel, the forward drop-out voltage of the diode that is connected than the semiconductor switch reverse parallel connection with the described voltage clamp bit-type buffer that is not connected in parallel is high.
6. any described three level power conversion equipment according to claim 1～5 is characterized in that:
Adopt the diode of following characteristic: the reverse recovery current of the diode that is connected with the semiconductor switch reverse parallel connection of the described voltage clamp bit-type buffer that is connected in parallel, the reverse recovery current of the diode that is connected than the semiconductor switch reverse parallel connection with the described voltage clamp bit-type buffer that is not connected in parallel is little.
7. level power conversion equipment, it constitutes: the DC power supply series circuit is connected in series with the first DC power supply and the second DC power supply, the first semiconductor switch series circuit sequentially is connected in series with respectively according to the first～the 4th semiconductor switch, and reverse parallel connection is connected with first of diode～the 4th semiconductor switch, described DC power supply series circuit and described the first semiconductor switch series circuit are connected in parallel, with being connected in series a little as ac terminal of described the second semiconductor switch and described the 3rd semiconductor switch, the second semiconductor switch series circuit is connected in series with the 5th and the 6th semiconductor switch that reverse parallel connection respectively is connected with diode, described the second semiconductor switch series circuit is connected in the series circuit of described the second semiconductor switch and described the 3rd semiconductor switch in parallel, being connected in series a little and being connected the connection that is connected in series of DC power supply series circuit of described the second semiconductor switch series circuit
Described three level power conversion equipments are characterised in that:
At described the 5th semiconductor switch and the 6th semiconductor switch, be provided with the so-called voltage clamp bit-type buffer of the voltage of voltage that the voltage clamping that will be applied to these semiconductor switchs is the first DC power supply or the second DC power supply, and do not arrange and described the second semiconductor switch and the direct-connected buffer of described the 3rd semiconductor switch, or the setting buffer fully little with described voltage clamp bit-type buffer phase specific capacity, described the first and second semiconductor switchs of conducting when exporting positive voltage to described ac terminal, described the third and fourth semiconductor switch of conducting when exporting negative voltage, respectively conducting described second when the output no-voltage, the 3rd, the the 5th and the 6th semiconductor switch, when when no-voltage output moves on to positive voltage output, carrying out at first described the 3rd semiconductor switch being applied cut-off signal, then the described the 5th and the 6th semiconductor switch is applied cut-off signal, after this described the first semiconductor switch is applied the action of Continuity signal, when when no-voltage output moves on to negative voltage output, carrying out at first described the second semiconductor switch being applied cut-off signal, then the described the 5th and the 6th semiconductor switch is applied cut-off signal, after this 4th semiconductor switch is applied the action of Continuity signal.
8. three level power conversion equipments according to claim 7 is characterized in that:
The described first and the 4th semiconductor switch is made of a branch road built-in module, described second and third semiconductor switch is made of two branch road built-in modules, the the described the 5th and the 6th semiconductor switch is made of two branch road built-in modules, when being connected in parallel described each module, be built-in with described second and the module of two path built-ins of the 3rd semiconductor switch and be built-in with the described the 5th and the module of two path built-ins of the 6th semiconductor switch near configuration.
9. three level power conversion equipments according to claim 7 is characterized in that:
Described first and second semiconductor switch, the the described the 3rd and the 4th semiconductor switch, and the described the 5th and the 6th semiconductor switch consist of with two branch road built-in modules respectively, when being connected in parallel described each module, be built-in with the described the 5th and the block configuration of the 6th semiconductor switch the module that is built-in with described first and second semiconductor switch and be built-in with the described the 3rd and the module of the 4th semiconductor switch between.
10. any described three level power conversion equipment according to claim 7～9 is characterized in that:
Described second, third, the 5th, the 6th semiconductor switch is respectively equipped with parallel diode, the forward drop-out voltage of the parallel diode of described second and third semiconductor switch, than the described the 5th and the forward drop-out voltage of the parallel diode of the 6th semiconductor switch high.
11. any described three level power conversion equipment according to claim 7～10 is characterized in that:
Adopt the parallel diode of following characteristic: the reverse recovery current of the parallel diode of described second and third semiconductor switch, than the described the 5th and the reverse recovery current of the parallel diode of the 6th semiconductor switch little.
Applications Claiming Priority (4)
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| JP2011178970 | 2011-08-18 | ||
| JP2011-178970 | 2011-08-18 | ||
| JP2012-026343 | 2012-02-09 | ||
| JP2012026343A JP5929277B2 (en) | 2011-08-18 | 2012-02-09 | 3-level power converter |
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| CN102957332B CN102957332B (en) | 2015-07-01 |
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