CN102957093A - Semiconductor quantum dot electron energy level light emitting device at electron energy level - Google Patents
Semiconductor quantum dot electron energy level light emitting device at electron energy level Download PDFInfo
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- CN102957093A CN102957093A CN2012103977832A CN201210397783A CN102957093A CN 102957093 A CN102957093 A CN 102957093A CN 2012103977832 A CN2012103977832 A CN 2012103977832A CN 201210397783 A CN201210397783 A CN 201210397783A CN 102957093 A CN102957093 A CN 102957093A
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Abstract
The invention discloses a semiconductor quantum dot light emitting device at an electron energy level. The semiconductor quantum dot light emitting device at an electron energy level structurally comprises an n-type doped GaAs substrate layer, wherein an AlGaAs layer, an AlGaAs buffer layer, a multi-layer AlAs or GaAs, InAs periodic structure, an undoped GaAs buffer layer and an n-type doped GaAs upper electrode layer are formed layer by layer on the n-type doped GaAs substrate layer through the molecular beam epitaxy technology, wherein the Al component of the AlGaAs layer is changed between 0 and 0.2, the AlGaAs layer is used for injecting electrons into a quantum dot layer and is capable of modulating the energy level, the Al component of the AlGaAs buffer layer is fixed to be 0.2, the undoped GaAs buffer layer is deposited on the multi-layer AlAs or GaAs, InAs periodic structure, the GaAs upper electrode layer at the top and the n-type doped GaAs substrate layer at the bottom are used for testing the voltage-current curve of the manufactured device. The quantum dot light emitting device provided by the invention can operate at room temperature or at quasi room temperature, the working temperature approaches 300 K, and refrigeration equipment is not needed or only a semiconductor thermoelectric refrigerating unit is used for refrigerating. The quantum dot light emitting device provided by the invention is capable of generating laser in far infrared and terahertz wave bands and is high in light emitting efficiency.
Description
Technical field
The invention belongs to the semiconductor light emitting technical field, particularly relate to a kind of semiconductor quantum idea energy level luminescent device.
Background technology
Quantum cascade laser, the model who quantum-cutting and quantum physics is used for design novel semi-conductor band TRANSITION LASER device, because modern material growing technology such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) can be in the growths of atomic scale control material layer, up to the present existing multiple material system has realized the growth of quantum cascade laser device, such as InGaAs/AlGaAs and GaAs/AlGaAs system.The high-power light source of providing of mid and far infrared wave band and terahertz wave band is provided in the fast development of quantum cascade laser technology.Mid and far infrared wave band and terahertz wave band technology have presented wide application prospect in fields such as basic research (electromagnetism, optics, semiconductor physics, optoelectronics) and practical applications (imaging, safety check, communication, medical treatment detection).
Yet quantum cascade laser often can only be operated under the low temperature environment, needs to adopt liquid nitrogen refrigerating apparatus.Simultaneously, the luminous efficiency of quantum cascade laser self is lower.So it is just necessary to remove to explore and invent a kind of novel far infrared terahertz wave band laser.
Summary of the invention
In view of traditional quantum cascade laser working temperature is lower, and luminous efficiency is lower.We propose a kind of new far infrared and Terahertz light source device and its implementation, and this device also can be worked under room temperature or accurate room temperature, and luminous efficiency is higher.
The present invention adopts following technical scheme for achieving the above object:
A kind of semiconductor quantum idea energy level luminescent device is characterized in that: its structure is the GaAs substrate layer that N-shaped mixes, and successively grows successively by molecular beam epitaxy technique or metal organic chemical vapor deposition at described GaAs substrate layer:
The AlGaAs layer that Al component 0-0.2 changes is used to quantum dot layer to inject electronics, can modulate energy level simultaneously;
The AlGaAs resilient coating, wherein the Al component is fixed as 0.2;
The AlAs of multilayer or GaAs, the InAs periodic structure;
At the unadulterated GaAs resilient coating of multilayer periodic structure deposition one deck;
The GaAs that N-shaped the mixes level layer that powers on;
The GaAs upper electrode layer of wherein going up most and nethermost N-shaped Doped GaAs substrate layer are used for after prepare device, the voltage-to-current curve of test component, thus confirm the validity of device, simultaneously also can be for the regulation and control of quantum dot energy level.
It is further characterized in that: in the described multilayer periodic structure, AlAs or GaAs barrier layer and InAs quantum dot layer adopt the MBE deposition, the short time deposition, and because the lattice of InAs and AlAs or GaAs does not mate, will form quantum dot layer.
Preferably: described multilayer periodic structure is greater than 20 layers.
Further: described semiconductor quantum idea energy level luminescent device employing optical pumping or electric injection mode are luminous.
Quantum dot light emitting device of the present invention can be worked under the condition of room temperature or accurate room temperature, and working temperature need not refrigeration plant or only needs the semiconductor thermoelectric refrigeration device to freeze near 300 K.Quantum dot light emitting device of the present invention can also produce laser in far infrared and terahertz wave band, and luminous efficiency is high.
Description of drawings
Fig. 1 is structural representation of the present invention.
Fig. 2 is principle of the invention figure.
Fig. 3 is the semiconductor quantum idea energy level band luminescent device schematic diagram that electricity injects.
Embodiment
A kind of semiconductor quantum idea energy level luminescent device as shown in Figure 1, its structure are the GaAs substrate layer that N-shaped mixes, at described GaAs substrate layer by molecular beam epitaxy technique or metal organic chemical vapor deposition successively successively growth:
The AlGaAs layer that Al component 0-0.2 changes is used to quantum dot layer to inject electronics, can modulate energy level simultaneously;
The AlGaAs resilient coating, wherein the Al component is fixed as 0.2;
The AlAs of multilayer or GaAs, the InAs periodic structure;
At the unadulterated GaAs resilient coating of multilayer periodic structure deposition one deck;
The GaAs that N-shaped the mixes level layer that powers on;
The GaAs upper electrode layer of wherein going up most and nethermost N-shaped Doped GaAs substrate layer are used for after prepare device, the voltage-to-current curve of test component, thus confirm the validity of device, simultaneously also can be for the regulation and control of quantum dot energy level.
In the described multilayer periodic structure, AlAs or GaAs barrier layer and InAs quantum dot layer adopt the MBE deposition, the short time deposition, and because the lattice of InAs and AlAs or GaAs does not mate, will form quantum dot layer.
Preferably: described multilayer periodic structure is greater than 20 layers.
Described semiconductor quantum idea energy level luminescent device employing optical pumping or electric injection mode are luminous.
The quantum dot light emitting device principle of optical pumping is, be in electronics in ground state or the valence band by the incident laser pumping on high level or conduction band top, then drop to energy level from high level, energy reduces, and sends photon.
In the multicycle structure, AlAs/InAs or GaAs/InAs thickness, the optical maser wavelength of being sent by needs designs.
For the semiconductor quantum idea energy level band luminescent device that electricity injects, device is comprised of the multicycle structure, add electric field after, can be with inclination, its independent cycling is illustrated wherein specifically to comprise as shown in Figure 3:
The GaAs substrate layer that N-shaped mixes, successively grow successively by molecular beam epitaxy technique or metal organic chemical vapor deposition at described GaAs substrate layer: the AlGaAs layer that Al component 0-0.2 changes is used to quantum dot layer to inject electronics;
The AlGaAs resilient coating, wherein the Al component is fixed as 0.2, and thickness is about 3nm;
The AlAs barrier layer, this barrier layer and AlGaAs before can separate quantum dot and electron injecting layer, simultaneously the energy level of quantum dot are modulated, and its ground state energy is improved, and are higher than at the bottom of the conduction band of GaAs.
The InAs quantum dot layer, this quantum dot layer can adopt the method growth of MBE, because the lattice between AlAs and the InAs does not mate, of short duration employing MBE deposition can obtain the InAs quantum dot layer.At quantum dot layer, our needed photon h ν is sent in electron energy generation transition.
Be the AlGaAs/GaAs periodic structure afterwards, acting on of this structure hinders the direct tunnelling of electronics by the InAs quantum dot layer.Simultaneously this structure makes of being that also the electronic effect ground state advancing after the quantum dot generation transition enters next cycle.
Described luminescent device belongs to semiconductor sublayer energy level band luminescent device, operation principle such as Fig. 2.Because the existence of quantum dot, energy level generation discretization in the conduction band is injected or optical pumping via electricity, and the sub-energy level band that the energy level of electronics from conduction band is higher drops to and can reach on the lower sub-energy level band, sends required far infrared or terahertz light.The light that this quantum dot light emitting device can send, photon energy is between several meV to tens meV.
Claims (4)
1. semiconductor quantum idea energy level luminescent device is characterized in that: its structure is the GaAs substrate layer that N-shaped mixes, at described GaAs substrate layer by molecular beam epitaxy technique or metal organic chemical vapor deposition successively successively growth:
The AlGaAs layer that Al component 0-0.2 changes is used to quantum dot layer to inject electronics, can modulate energy level simultaneously;
The AlGaAs resilient coating, wherein the Al component is fixed as 0.2;
The AlAs of multilayer or GaAs, the InAs periodic structure;
At the unadulterated GaAs resilient coating of multilayer periodic structure deposition one deck;
The GaAs that N-shaped the mixes level layer that powers on;
The GaAs upper electrode layer of wherein going up most and nethermost N-shaped Doped GaAs substrate layer are used for after prepare device, the voltage-to-current curve of test component, thus confirm the validity of device, simultaneously also can be for the regulation and control of quantum dot energy level.
2. semiconductor quantum idea energy level luminescent device according to claim 1, it is characterized in that: in the described multilayer periodic structure, AlAs or GaAs barrier layer and InAs quantum dot layer, adopt the MBE deposition, the short time deposition, and because the lattice of InAs and AlAs or GaAs does not mate, will form quantum dot layer.
3. semiconductor quantum idea energy level luminescent device according to claim 1 and 2, it is characterized in that: described multilayer periodic structure is greater than 20 layers.
4. semiconductor quantum idea energy level luminescent device according to claim 1 and 2 is characterized in that: described semiconductor quantum idea energy level luminescent device adopts optical pumping or electric injection mode luminous.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116603172A (en) * | 2023-06-06 | 2023-08-18 | 东莞市红富照明科技有限公司 | Flexible quantum dot far infrared physiotherapy belt |
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| CN1549411A (en) * | 2003-05-21 | 2004-11-24 | 中国科学院半导体研究所 | Method for producing self-organizing indium arsenide/gallium arsenide disk shape quantum point material |
| JP2006269886A (en) * | 2005-03-25 | 2006-10-05 | Advanced Telecommunication Research Institute International | Method of forming quantum dot, method of manufacturing semiconductor light emitting device using same, and semiconductor light emitting device formed by the method |
| CN101145590A (en) * | 2006-09-13 | 2008-03-19 | 中国科学院半导体研究所 | Quantum dot material structure and its growth method |
| CN101820136A (en) * | 2010-04-21 | 2010-09-01 | 中国科学院半导体研究所 | Asymmetrical 980nm semiconductor laser structure with high power and wide waveguide |
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Patent Citations (4)
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| CN1549411A (en) * | 2003-05-21 | 2004-11-24 | 中国科学院半导体研究所 | Method for producing self-organizing indium arsenide/gallium arsenide disk shape quantum point material |
| JP2006269886A (en) * | 2005-03-25 | 2006-10-05 | Advanced Telecommunication Research Institute International | Method of forming quantum dot, method of manufacturing semiconductor light emitting device using same, and semiconductor light emitting device formed by the method |
| CN101145590A (en) * | 2006-09-13 | 2008-03-19 | 中国科学院半导体研究所 | Quantum dot material structure and its growth method |
| CN101820136A (en) * | 2010-04-21 | 2010-09-01 | 中国科学院半导体研究所 | Asymmetrical 980nm semiconductor laser structure with high power and wide waveguide |
Non-Patent Citations (3)
| Title |
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| 余奕: "InAs/GaAs量子点半导体光放大器理论研究与量子点制备", 《中国优秀硕士学位论文全文数据库基础科学辑》 * |
| 孔令民: "自组织InAs量子点材料生长与发光性质的研究", 《中国优秀博硕士学位论文全文数据库（硕士）基础科学辑》 * |
| 孟宪权等: "InAs /AlAs /GaAs量子点的光致发光光谱研究", 《武汉大学学报（理学版）》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116603172A (en) * | 2023-06-06 | 2023-08-18 | 东莞市红富照明科技有限公司 | Flexible quantum dot far infrared physiotherapy belt |
| CN116603172B (en) * | 2023-06-06 | 2024-01-02 | 东莞市红富照明科技有限公司 | Flexible quantum dot far infrared physiotherapy belt |
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