CN102951619B - Cadmium telluride nanowire and preparation method thereof - Google Patents
Cadmium telluride nanowire and preparation method thereof Download PDFInfo
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- CN102951619B CN102951619B CN201110255504.4A CN201110255504A CN102951619B CN 102951619 B CN102951619 B CN 102951619B CN 201110255504 A CN201110255504 A CN 201110255504A CN 102951619 B CN102951619 B CN 102951619B
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Abstract
The invention provides a preparation method of a cadmium telluride nanowire, which comprises the following steps: S1. substrate processing: washing and drying zeolite, plating a metal film on the zeolite surface, and storing the treated zeolite in a drying box; S2. horizontally putting a quartz tube in a high-temperature pipe furnace, putting pure cadmium telluride powder at an air flow upwind port, and putting the treated zeolite at an air flow downwind port; S3. vacuumizing the high-temperature pipe furnace, and introducing inert gas to perform gas washing; S4. continuing introducing the inert gas, and heating the cadmium telluride powder and zeolite; and S5. continuing introducing the inert gas, and cooling the cadmium telluride powder and zeolite to room temperature together so that the generated cadmium telluride nanowire is attached to the zeolite surface. The method provided by the invention has the advantages of strong operability, low requirements for experimental equipment, and controllable experimentation process; and the cadmium telluride nanowire prepared by the method has the advantages of smooth surface and favorable shape, thereby having favorable application prospects.
Description
[technical field]
The present invention relates to nano wire field, relate to particularly the preparation method of cadmium telluride nano wire.
[background technology]
Nano wire is that a kind of two dimension (laterally) length is limited in below 100 nanometers, and one dimension (longitudinally) is relatively infinitely great, has and is significantly different from the electric property of its block, the one-dimensional material of optical property.Cadmium telluride is II-VI semiconductor compound, can produce good photoresponse to visible ray, in the photoelectric conversion application such as solar electrical energy generation, infrared acquisition, X-ray detection, plays an important role.The cadmium telluride nano wire of preparing as starting material with cadmium telluride, can be for making the nano-device that can realize single nano-wire infrared acquisition.The photonic circuit of the nano-device composition of excellent performance, can be for the manufacture of the photonic computer (optical computer) that will have most development future.The photonic circuit of nano-device composition, except the information processing for computer, can also be used for the aspects such as microchemical analysis, environmental monitoring, imaging.The thread photoelectric conversion nano-device of cadmium telluride nanometer has huge development prospect.
The method of preparing at present cadmium telluride nano wire mainly contains liquid phase method and vapour deposition process.Liquid phase method technique cadmium telluride nanowire surface numerous and diverse and by Liquid preparation methods is coarse, be not easy to control, and therefore the cadmium telluride nano wire of Liquid preparation methods affects the control to its photoelectric conversion to a great extent.The variable factor of vapour deposition process is more, but the cadmium telluride nano wire smoother making by vapour deposition process, because the condition of cadmium telluride nanowire growth is quite strict, especially change into this step of size of small droplets at catalyzer high-temperature molten the most key, therefore in existing situation, use vapour deposition process successfully to prepare the example of cadmium telluride nano wire considerably less, even if there is the report of successfully preparing cadmium telluride nano wire, its complex process is loaded down with trivial details, very high to equipment requirements, be not easy to realize.
[summary of the invention]
Technical problem to be solved by this invention is to provide a kind of preparation method of cadmium telluride nano wire.
The cadmium telluride nanowire surface that the present invention is prepared by vapour deposition process is smooth, and pattern is better, and production technique is simple, has fabulous development prospect.
The technical scheme that the present invention realizes goal of the invention employing specifically comprises the following steps:
S1. process base material: washing dry zeolite, in zeolite surface plating layer of metal film, be stored in the zeolite of processing in loft drier;
S2. silica tube is lain in a horizontal plane in high temperature process furnances, get pure cadmium antimonide powder and be placed in air-flow uptake, the zeolite of processing is placed in air port under air-flow;
S3. high temperature process furnances is evacuated, passes into rare gas element gas washing;
S4. continue to pass into rare gas element, heating cadmium antimonide powder, zeolite;
S5. continue to pass into rare gas element with the speed of step S4, by cadmium antimonide powder and together cool to room temperature of zeolite, the cadmium telluride nano wire of generation is attached to zeolite surface.
Preferably, in described step S1, described zeolite is 4A zeolite or natural mordenite zeolite.
Preferably, in described step S1, described zeolite surface institute metal-coated membrane is golden film or bismuth film.
Preferably, in described step S2, described pure cadmium antimonide powder is 10-15 gram.
Preferably, in described step S3, described rare gas element is argon gas or argon gas, hydrogen gas mixture.
Preferably, in described step S3, described high temperature process furnances internal gas pressure is controlled to 1 × 10
- 4torr-5 × 10
-5torr.
Preferably, in described step S4, the flow velocity that passes into described rare gas element is 20-80sccm.
Preferably, in described step S4, high-temperature tubular furnace pressure is adjusted to 0.1-0.2atm.
Preferably, in described step S4, the temperature of heating cadmium antimonide powder is controlled at 600-1000 DEG C, and the temperature of heating zeolite is controlled at 400-800 DEG C.
Preferably, in described step S4, described soaking time is controlled at 1-2 hour.
The method of preparing cadmium telluride nano wire by the present invention is workable, and lower to the requirement of experimental installation, experimentation is easy to control, has good application development prospect.
[brief description of the drawings]
Fig. 1, prepares the schema of cadmium telluride nano wire.
Fig. 2, cadmium telluride nanowire growth process schematic diagram.
In figure, 1 is silica tube, and 11 is cadmium antimonide powder, and 12 is the zeolite of processing, and 13 is cadmium telluride nano wire.
[embodiment]
Below in conjunction with drawings and Examples, the present invention is described in detail.
Accompanying drawing 1 shows the schema of preparing cadmium telluride nano wire, accompanying drawing 2 shows cadmium telluride nanowire growth process schematic diagram, 11 is cadmium antimonide powder, be placed on air-flow uptake place, 12 is the zeolite of processing, be placed on air port place under air-flow, through reaction, the cadmium telluride nano wire 13 of generation is attached to the surface of zeolite 12.
The present invention uses zeolite as base material growth cadmium telluride nano wire based on vapour deposition process, because zeolite is a kind of porous material, aperture is at Nano grade, when its surperficial metal catalyst is at high temperature melt into after metal small droplets, metal small droplets can be absorbed in the hole of zeolite surface, is separated into nano level metal small droplets one by one.Utilize rare gas element as carrier gas, cadmium telluride delivery of steam to zeolite surface and be dissolved in metal small droplets, is just separated out to cadmium-telluride crystal, thereby grown cadmium telluride nano wire after metal small droplets is saturated.
Embodiment 1
A kind of preparation process of cadmium telluride nano wire is:
S1. process base material: 4A zeolite 12 is washed ten minutes in ultrasonic wave with acetone, alcohol, deionized water respectively, washing is placed in vacuum drying oven and thoroughly dries, at 4A zeolite 12 plated surface layer of gold films, the 4A zeolite 12 of processing is stored in loft drier;
S2. silica tube 1 is lain in a horizontal plane in high temperature process furnances, get the pure cadmium antimonide powder 11 of 10g and be placed in air-flow uptake, the 4A zeolite 12 of processing is placed in air port under air-flow;
S3. high temperature process furnances is evacuated, passes into argon gas gas washing 3 times, high temperature process furnances internal gas pressure is controlled to 1 × 10
-4torr;
S4. continue to pass into argon gas, the flow rate control of argon gas, being 20sccm, is adjusted to 0.15atm by high-temperature tubular furnace pressure, and the temperature of heating cadmium antimonide powder 11 is controlled at 800 DEG C, and the temperature of heating 4A zeolite 12 is controlled at 600 DEG C, is incubated 1 hour;
S5. continue to pass into argon gas with the speed of step S 4, by cadmium antimonide powder 11 and together cool to room temperature of 4A zeolite 12, the cadmium telluride nano wire 13 of generation is attached to 4A zeolite surface.
Should be appreciated that in the preparation process of the present embodiment, 4A zeolite is substrate, and golden film is catalyzer.
Should be appreciated that in step S3, passing into argon gas is to set it as protection gas, in step S4, S5, passes into argon gas, is to set it as the carrier gas of carrying cadmium telluride steam.
In the present embodiment, select porous material 4A zeolite as substrate, preparation process is simple, easy handling.Temperature is the important factor that affects cadmium telluride nanowire growth, and compared with other existing modes of preparing cadmium telluride nano wire, above-mentioned preparation method's temperature index is more controlled.
Embodiment 2
Sometimes wider in order to make to prepare the range of choice of cadmium telluride nanowire substrates, preparation process is more easy to operate, can select natural mordenite zeolite as substrate, selects bismuth film to make catalyzer, and detailed process is as follows:
S1. process base material: natural mordenite zeolite 12 is washed ten minutes in ultrasonic wave with acetone, alcohol, deionized water respectively, washing is placed in vacuum drying oven and thoroughly dries, at natural mordenite zeolite 12 plated surface one deck bismuth films, the natural mordenite zeolite of processing 12 is stored in loft drier;
S2. silica tube 1 is lain in a horizontal plane in high temperature process furnances, get the pure cadmium antimonide powder 11 of 10g and be placed in air-flow uptake, the natural mordenite zeolite 12 of processing is placed in air port under air-flow;
S3. high temperature process furnances is evacuated, passes into argon gas gas washing 3 times, high temperature process furnances internal gas pressure is controlled to 1 × 10
-4torr;
S4. continue to pass into argon gas with the speed of step S4, high-temperature tubular furnace pressure is adjusted to 0.15atm, the temperature that cadmium antimonide powder 11 heats is controlled at 800 DEG C, and the temperature that natural mordenite zeolite 12 heats is controlled at 600 DEG C, is incubated 1 hour;
S5. continue to pass into argon gas, by cadmium antimonide powder 11 and together cool to room temperature of natural mordenite zeolite 12, the cadmium telluride nano wire 13 of generation is attached to natural mordenite zeolite surface.
The cadmium telluride nano wire making by above-mentioned preparation method, smooth surface, process of growth is easily controlled, low for equipment requirements, and production technique is simple, has very high production application and is worth.
In the above-described embodiments, only the present invention has been carried out to exemplary description, but those skilled in the art are reading after present patent application and can carry out various amendments to the present invention without departing from the spirit and scope of the present invention.
Claims (8)
1. a preparation method for cadmium telluride nano wire, is characterized in that, comprises the following steps:
S1. process base material: washing dry zeolite, in zeolite surface plating layer of metal film, be stored in the zeolite of processing in loft drier; Wherein, described zeolite surface institute metal-coated membrane is golden film or bismuth film;
S2. silica tube is lain in a horizontal plane in high temperature process furnances, get pure cadmium antimonide powder and be placed in air-flow uptake, the zeolite of processing is placed in air port under air-flow;
S3. high temperature process furnances is evacuated, passes into rare gas element gas washing;
S4. continue to pass into rare gas element, heating cadmium antimonide powder, zeolite; Wherein, the temperature of heating cadmium antimonide powder is controlled at 600-1000 DEG C, and the temperature of heating zeolite is controlled at 400-800 DEG C;
S5. continue to pass into rare gas element, by cadmium antimonide powder and together cool to room temperature of zeolite, the cadmium telluride nano wire of generation is attached to zeolite surface.
2. the preparation method of a kind of cadmium telluride nano wire according to claim 1, is characterized in that, in described step S1, described zeolite is 4A zeolite or natural mordenite zeolite.
3. the preparation method of a kind of cadmium telluride nano wire according to claim 1, is characterized in that, in described step S2, described pure cadmium antimonide powder is 10-15 gram.
4. the preparation method of a kind of cadmium telluride nano wire according to claim 1, is characterized in that, in described step S3, described rare gas element is argon gas or argon gas, hydrogen gas mixture.
5. the preparation method of a kind of cadmium telluride nano wire according to claim 1, is characterized in that, in described step S3, described high temperature process furnances internal gas pressure is controlled to 1 × 10
-4torr-5 × 10
-5torr.
6. the preparation method of a kind of cadmium telluride nano wire according to claim 1, is characterized in that, in described step S4, passes into the flow rate control of described rare gas element at 20-80sccm.
7. the preparation method of a kind of cadmium telluride nano wire according to claim 1, is characterized in that, in described step S4, high-temperature tubular furnace pressure is controlled to 0.1-0.2atm.
8. the preparation method of a kind of cadmium telluride nano wire according to claim 1, is characterized in that, in described step S4, the time of described heating cadmium antimonide powder, zeolite is controlled at 1-2 hour.
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| US11195634B2 (en) | 2018-02-28 | 2021-12-07 | King Abdullah University Of Science And Technology | Angstrom-scale nanowire arrays in zeolite |
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Non-Patent Citations (6)
| Title |
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| : Mechanism of Self-Assembly, Ostwald Ripening, and Control of NW Geometry.《The Journal of Physical Chemistry C》.2007,第112卷(第2期),第370-377页. * |
| G. Daniel Lilly,et al..Media Effect on CdTe Nanowire Growth  * |
| Media Effect on CdTe Nanowire Growth : Mechanism of Self-Assembly, Ostwald Ripening, and Control of NW Geometry;G. Daniel Lilly,et al.;《The Journal of Physical Chemistry C》;20071222;第112卷(第2期);第370-377页 * |
| Muhammad Iqbal Bakti Utama，et al..Vertically Aligned Cadmium Chalcogenide Nanowire Arrays on Muscovite Mica A Demonstration of Epitaxial Growth Strategy.《Nano Letters》.2010,第11卷第3051–3057页. * |
| 姜海涛等.碲化镉纳米线的制备和生长机理分析.《新疆大学学报(自然科学版)》.2005,第22卷(第4期),第425-429页. * |
| 碲化镉纳米线的制备和生长机理分析;姜海涛等;《新疆大学学报(自然科学版)》;20051130;第22卷(第4期);第425-429页 * |
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