CN102944588A - Method for measuring etching-induced interface state parameters of AlGaN material with high Al component - Google Patents
Method for measuring etching-induced interface state parameters of AlGaN material with high Al component Download PDFInfo
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- CN102944588A CN102944588A CN201210482757XA CN201210482757A CN102944588A CN 102944588 A CN102944588 A CN 102944588A CN 201210482757X A CN201210482757X A CN 201210482757XA CN 201210482757 A CN201210482757 A CN 201210482757A CN 102944588 A CN102944588 A CN 102944588A
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 110
- 239000000463 material Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000005530 etching Methods 0.000 title claims abstract description 43
- 238000009826 distribution Methods 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 7
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 7
- 239000010980 sapphire Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000012360 testing method Methods 0.000 claims description 27
- 239000003990 capacitor Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000006378 damage Effects 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 208000027418 Wounds and injury Diseases 0.000 claims description 5
- 208000014674 injury Diseases 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 6
- 238000000103 photoluminescence spectrum Methods 0.000 abstract description 4
- 230000001052 transient effect Effects 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract 4
- 238000009616 inductively coupled plasma Methods 0.000 abstract 2
- 238000001773 deep-level transient spectroscopy Methods 0.000 description 8
- 238000004611 spectroscopical analysis Methods 0.000 description 5
- 238000011160 research Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The invention discloses a method for measuring etching induced interface state parameters of an AlGaN material with high Al component, which comprises the following steps: extending AlGaN material with high Al component on a sapphire substrate; processing the surface of the AlGaN material by utilizing an ICP (inductively coupled plasma) etching technology; preparing Schottky diodes based on different conditions of etching-free treatment and etching treatment of AlGaN materials; and obtaining the state density and the energy level distribution condition of the etching induced interface of the AlGaN material by using a Schottky capacitance spectrum method. According to the method, the interface state is measured by using a Schottky capacitance spectrum method, the etching induced interface state of the AlGaN material is measured by using a capacitance spectrum technology, and the limitations of other methods for measuring induced defects such as Deep Level Transient Spectrums (DLTS) and PL spectrums are avoided.
Description
Technical field
The present invention relates to technical field of semiconductor device, relate in particular to a kind of method that high Al contents AlGaN material etching induces interface state parameters of measuring.
Background technology
Ternary alloy Al
xGa
1-xThe N material is a kind of direct band-gap semicondictor, and along with the Al component is adjustable continuously between 3.4 to 6.2eV by its energy gap of variation of 0 to 1, corresponding wavelength coverage is 200 to 365nm, thereby be a kind of important short-wavelength light electronic material, be widely used in as seen ultraviolet detector and the ultraviolet light-emitting diode of blind, non-solar-blind band, the aspects such as ultraviolet laser.
When the devices such as development AlGaN base ultraviolet detector, light emitting diode or laser instrument, table top prepares the step that is absolutely necessary.Corrosion-resistant, stable chemical performance is one of advantage of AlGaN material, the corrosion of acid-base pair AlGaN material is all very slow under the room temperature, the method that adopts galvanochemistry/photochemistry to strengthen can improve etch rate, but because wet etching exists figure to shift the shortcoming of low precision, be difficult to use in practical devices, the particularly preparation of the device such as small size or extensive focal plane, the therefore normal requirement of adopting dry etching to reach mesa technology in the preparation of device.Because dry etching technology is the lithographic method that chemical reaction combines with the physical bombardment effect, therefore in the table top preparation of AlGaN device, can introduce damage unavoidably.As, the bombardment of plasma can cause the fracture of defect of crystal on crystal surface and chemical bond, the preferential sputter of certain composition of material surface, thereby form non-stoichiometric surface etc., these can form surface state at etching surface, thereby increase reverse dark current and the tracking current of device, affect performance of devices and stability.Therefore further investigate the characteristic of AlGaN material etching induced defects, on understanding and analyzing etching technics to the mechanism that affects of device performance, it is significant to improve device performance.
At present, mainly concentrate on the AlGaN material of GaN material and low Al component about the research of the etching injury of AlGaN sill, the common method of its research etching induced defects is to adopt the technology such as deep level transient spectroscopy (DLTS), photoluminescence spectrum (PL).But along with the increase of Al content in the AlGaN material, the energy gap of material increases gradually, to the research of the AlGaN material etching injury of the high Al contents comparatively difficulty that becomes.This is not only owing to be difficult to obtain high-quality AlGaN material, also is because be subject to the restriction of test condition simultaneously.Because the DLTS technology is by measuring the sample transient state junction capacity under the AC bias signal, thereby the width of monitoring carrier depletion layer, for the such high-resistance semi-conductor material of AlGaN, in the temperature range that DLTS measures, charge carrier wide can band and the depletion layer of high resistant in transporting and become very difficult, thereby conventional DLTS method will have certain limitation to the Study of Defects of the AlGaN material of high Al contents.
In the measurement of the photoluminescence spectrum of the AlGaN material of GaN and low Al component, usually use wavelength to be the He-Cd laser instrument of 325nm; And for the AlGaN material, particularly required Al component 45% and 65% in the preparation of blind detector of day of high Al contents, corresponding wavelength is respectively 280nm and 240nm, is difficult to the laser instrument deexcitation AlGaN material that finds wavelength enough to lack.Therefore, the research that at present induces the physical characteristics of damage about the etching of the AlGaN material of high Al contents does not almost have.
Summary of the invention
The technical matters that (one) will solve
In view of this, fundamental purpose of the present invention is to provide a kind of method that high Al contents AlGaN material etching induces interface state parameters of measuring, to avoid carrying out the at low temperatures capacitance measurement of highly resistant material and the limitation of optical test equipment.
(2) technical scheme
For achieving the above object, the invention provides the method that a kind of etching of measuring high Al contents AlGaN material induces interface state parameters, the method comprises:
Step 10: extension high Al contents AlGaN material on Sapphire Substrate;
Step 20: utilize the ICP lithographic technique that this AlGaN material surface is processed;
Step 30: preparation is based on the schottky diode without etching processing and the processing of process different etching condition of AlGaN material;
Step 40: the I-V characteristic of test AlGaN schottky diode, the resistance in series R of extraction diode
S
Step 50: the C of test AlGaN schottky diode
M-V characteristic is utilized resistance in series R
STo the capacitor C that measures
MProofread and correct, obtain junction capacity C-V characteristic, and utilize this C-V characteristic, extract the schottky barrier height Φ of diode
B
Step 60: test the AlGaN schottky diode in frequency 1kHz≤f≤1MHz scope, the C under the different positive biases
M-f curve; By junction capacity C and interface state capacitor C
pWith depletion-layer capacitance C
SCRelation, obtain the interface state capacitor C under the different bias voltages
p-f curve; By the interface state capacitor C
pWith interface state level density N
SsRelation, interface state energy level E
SsWith respect to the relation of the position at the bottom of the semiconductor surface conduction band and applying bias, obtain interface state density N
SsEnergy distribution N
Ss～(E
C-E
Ss).
In the such scheme, described step 10 comprises:
Step 101: utilize the method epitaxial growth thickness of MOCVD to be in Sapphire Substrate
The AlN cushion;
Step 102: the n that continues the involuntary doping of epitaxial growth at described AlN cushion
-The high Al contents AlGaN material of type.Described n
-The high Al contents AlGaN material of type is Al
0.45Ga
0.55N material, thickness are 0.5～1um.
In the such scheme, described step 20 comprises: use the ICP lithographic technique to process the AlGaN material surface, obtain the AlGaN material surface that the different etching condition is processed; Etch technological condition is as follows: Cl
2: 20sccm, BCl
3: 10sccm, LF:300W, RF:10W to 60W; Wherein, for measuring different RF power to the impact of the etching injury of AlGaN material surface generation, RF power can be chosen in a certain range.
In the such scheme, described step 30 comprises:
Step 301: at the surperficial spin coating photoresist of the AlGaN material that passes through the different disposal condition, by the Ohmic contact figure of photoetching formation material, utilize electron beam evaporation growth Ti/Al/Ni/Au multiple layer metal, thickness is 350/1200/400/
Peel off rear formation metal ohmic contact;
Step 302: in 750 ℃～850 ℃ temperature ranges, at N
2In the atmosphere Ti/Al/Ni/Au multiple layer metal is carried out rapid thermal annealing, the thermal annealing time is 30 seconds～60 seconds, forms the Ohmic contact of AlGaN material;
Step 303: at the surperficial spin coating photoresist of AlGaN material, by the Schottky contacts figure of photoetching formation material, utilize electron beam evaporation growth Au metal, thickness is
By stripping technology, finish the preparation of the AlGaN material schottky diode of different disposal condition.
In the such scheme, described step 40 comprises:
Step 401: the forward I-V characteristic of utilizing semiconductor parametric tester test AlGaN schottky diode;
Step 402: the I-V family curve that records is put in order, obtained
Curve utilizes formula
Extract
Slope of a curve, thereby the resistance in series R of acquisition AlGaN schottky diode
S, wherein n is the ideal factor of diode.
In the such scheme, described step 50 comprises:
Step 501: be capacitor C with the schottky diode equivalence
MLead G with electricity
MSituation in parallel is utilized the C of anti-AlGaN schottky diode partially time the under the high frequency situations of semiconductor parametric tester test 1MHz
M-V characteristic;
Step 502: utilize formula C=C
M/ [(1-R
SG
M)
2+ (2 π fR
SC
M)
2] electric capacity that test is obtained proofreaies and correct, and obtains junction capacity C-V characteristic, wherein C
MAnd G
MBe respectively the test electric capacity and the electricity that obtain and lead R
sBe resistance in series, f is frequency;
Step 503: put junction capacity C-V characteristic in order distortion, obtain C
-2～V curve; Utilize formula C
-2=2 (V
i-V)/A
2QN
Dε
sCarry out match, wherein A is the Schottky contacts area, N
DBe carrier concentration, ε
sBe the specific inductive capacity of AlGaN material, V
iBe built-in voltage; Extract C
-2The intercept of～V curve obtains V
i, extract C
-2～V slope of a curve, the carrier concentration N of acquisition AlGaN material
DUtilize formula Φ
B=V
i+ ξ+kT/q,
N wherein
CBe AlGaN material conduction band available state density, calculate the schottky barrier height Φ of the AlGaN schottky diode of different disposal condition
B
In the such scheme, described step 60 comprises:
Step 601: test the AlGaN schottky diode in frequency 1kHz≤f≤1MHz scope, the C under the different positive biases
M-f curve;
Step 602: utilize formula C=C
M/ [(1-R
SG
M)
2+ (ω R
SC
M)
2] and resistance in series R
S, obtain junction capacity C-f characteristic;
Step 603: regard junction capacity C as the interface state capacitor C
pWith depletion-layer capacitance C
SCParallel circuit, can get the interface state capacitor C
p=C-C
SC, depletion-layer capacitance C wherein
SCCan obtain by C-f characteristic under the high frequency; Obtain thus the C under the different positive biases
p-f curve;
Step 604: for the interface state of continuous distribution, the interface state capacitor C
pWith interface state level density N
SsThe pass be C
p=qAN
SsTan
-1(2 π f τ)/2 π f τ, wherein A is that Schottky contacts area, τ are the time constant of interface state, by match, obtains interface state density N under the different bias voltages
Ss, τ;
Step 605: for the N-shaped semiconductor, interface state energy level E
SsWith respect to the relation of the position at the bottom of the semiconductor surface conduction band and applying bias by E
C-E
Ss=q (Φ
B-V) provide E wherein
CBe energy level at the bottom of the conduction band, Φ
BBe schottky barrier height, V is applying bias, and the result of integrating step 604 obtains interface state density N
SsEnergy distribution N
Ss～(E
C-E
Ss).
(3) beneficial effect
The invention has the beneficial effects as follows: consider the characteristics of the broad stopband of AlGaN material own and high resistant, the etching induced defects that utilizes conventional deep level transient spectroscopy and photoluminescence spectrometry to detect the AlGaN surface is restricted.Therefore measure the principle of interface state according to Schottky electric capacity spectrometry, propose to utilize Capacitance Spectroscopy Technique to measure the interface state that AlGaN material etching induces, avoided carrying out at low temperatures the capacitance measurement of highly resistant material and the limitation of optical test equipment.
Description of drawings
Fig. 1 is the method flow diagram that induces interface state parameters according to the etching of utilizing Schottky electric capacity spectrometry high Al contents AlGaN material of the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The present invention is that the etching of utilizing Schottky electric capacity spectrometry to study the AlGaN material of high Al contents induces the interface state problem.Schottky electric capacity spectral method is to determine interface state parameters with the dependence of frequency curves such as () C-f by measuring schottky junction electric capacity under different bias voltages.This method is more more feasible than traditional DLTS method, and particularly the resistance when sample is very high in the temperature range that DLTS measures, and causes the accurate measurement of electric capacity to be difficult in the situation of acquisition.And utilize the measurement temperature of C-f curve can be more than 300K, this moment, the resistance ratio of material was lower, can remove series resistance effect by its equivalent electrical circuit, thereby obtained accurate capacitance.At present, yet there are no and utilize this method to study the report that high Al contents AlGaN material etching induces interface state.
As shown in Figure 1, Fig. 1 is the method flow diagram that induces interface state parameters according to the etching of utilizing Schottky electric capacity spectrometry high Al contents AlGaN material of the embodiment of the invention, and the method may further comprise the steps:
Step 10: extension high Al contents AlGaN material on Sapphire Substrate; This step is specific as follows:
Step 101: utilize the method epitaxial growth thickness of MOCVD to be in Sapphire Substrate
The AlN cushion;
Step 102: the n that continues the involuntary doping of epitaxial growth at described AlN cushion
-The high Al contents AlGaN material of type is such as Al
0.45Ga
0.55N material, thickness are 0.5～1um.
Step 20: utilize the ICP lithographic technique that this AlGaN material surface is processed;
Use the ICP lithographic technique to process the AlGaN material surface, obtain the AlGaN material surface that the different etching condition is processed; Etch technological condition is as follows: Cl
2: 20Sccm, BCl
3: 10sccm, LF:300W, RF:10W to 60W; Wherein, for measuring different RF power to the impact of the etching injury of AlGaN material surface generation, RF power can be chosen in a certain range.
Step 30: preparation is based on the schottky diode without etching processing and the processing of process different etching condition of AlGaN material; This step is specific as follows:
Step 301: at the surperficial spin coating photoresist of the AlGaN material that passes through the different disposal condition,
By the Ohmic contact figure of photoetching formation material, utilize electron beam evaporation growth Ti/Al/Ni/Au multiple layer metal, thickness is 350/1200/400/
Peel off rear formation metal ohmic contact;
Step 302: in 750 ℃～850 ℃ temperature ranges, at N
2In the atmosphere Ti/Al/Ni/Au metal is carried out rapid thermal annealing, the thermal annealing time is 30 seconds～60 seconds, forms the Ohmic contact of AlGaN material;
Step 303: at the surperficial spin coating photoresist of AlGaN material, by the Schottky contacts figure of photoetching formation material, utilize electron beam evaporation growth Au metal, thickness is
By stripping technology, finish the preparation of the AlGaN material schottky diode of different disposal condition.
Step 40: the I-V characteristic of test AlGaN schottky diode, the resistance in series R of extraction diode
SThis step is specific as follows:
Step 401: utilize semiconductor parametric tester, such as HP4155A, the forward I-V characteristic of test AlGaN schottky diode;
Step 402: the I-V family curve that records is put in order, obtained
Curve utilizes formula
R wherein
SBe resistance in series, n is the ideal factor of diode,
Extract
Slope of a curve, thereby the resistance in series R of acquisition AlGaN schottky diode
S
Step 50: the C of test AlGaN schottky diode
M-V characteristic is utilized resistance in series R
STo the capacitor C that measures
MProofread and correct, obtain junction capacity C-V characteristic, and utilize this C-V characteristic, extract the schottky barrier height Φ of diode
BThis step is specific as follows:
Step 501: be capacitor C with the schottky diode equivalence
MLead G with electricity
MSituation in parallel is utilized semiconductor parametric tester, such as Agilent 4284A, and under the test high frequency situations, such as 1MHz, the C of the AlGaN schottky diode when anti-inclined to one side
M-V characteristic;
Step 502: utilize formula C=C
M/ [(1-R
SG
M)
2+ (2 π fR
SC
M)
2] electric capacity that test is obtained proofreaies and correct, and obtains junction capacity C-V characteristic, wherein C
MAnd G
MBe respectively the test electric capacity and the electricity that obtain and lead R
sBe resistance in series, f is frequency;
Step 503: put junction capacity C-V characteristic in order distortion, obtain C
-2～V curve; Utilize formula C
-2=2 (V
i-V)/A
2QN
Dε
sCarry out match, wherein A is the Schottky contacts area, N
DBe carrier concentration, ε
sBe the specific inductive capacity of AlGaN material, V
iBe built-in voltage; Extract C
-2The intercept of～V curve obtains V
i, extract C
-2～V slope of a curve, the carrier concentration N of acquisition AlGaN material
DUtilize formula Φ
B=V
i+ ξ+kT/q,
N wherein
CBe AlGaN material conduction band available state density, calculate the schottky barrier height Φ of the AlGaN schottky diode of different disposal condition
B
Step 60: test the AlGaN schottky diode in frequency 1kHz≤f≤1MHz scope, the C under the different positive biases
M-f curve; By junction capacity C and interface state capacitor C
pWith depletion-layer capacitance C
SCRelation, obtain the interface state capacitor C under the different bias voltages
p-f curve; By the interface state capacitor C
pWith interface state level density N
SsRelation, interface state energy level E
SsWith respect to the relation of the position at the bottom of the semiconductor surface conduction band and applying bias, obtain interface state density N
SsEnergy distribution N
Ss～(E
C-E
Ss).This step is specific as follows:
Step 601: test the AlGaN schottky diode in frequency 1kHz≤f≤1MHz scope, the C under the different positive biases
M-f curve;
Step 602: utilize formula C=C
M/ [(1-R
SG
M)
2+ (ω R
SC
M)
2] and resistance in series R
S, obtain junction capacity C-f characteristic;
Step 603: regard junction capacity C as the interface state capacitor C
pWith depletion-layer capacitance C
SCParallel circuit, can get the interface state capacitor C
p=C-C
SC, depletion-layer capacitance C wherein
SCCan obtain by C-f characteristic under the high frequency; Obtain thus the C under the different positive biases
p-f curve;
Step 604: for the interface state of continuous distribution, the interface state capacitor C
pWith interface state level density N
SsThe pass be C
p=qAN
SsTan
-1(2 π f τ)/2 π f τ, wherein A is that Schottky contacts area, τ are the time constant of interface state, by match, obtains interface state density N under the different bias voltages
Ss, τ;
Step 605: for the N-shaped semiconductor, interface state energy level E
SsWith respect to the relation of the position at the bottom of the semiconductor surface conduction band and applying bias by E
C-E
Ss=q (Φ
B-V) provide E wherein
CBe energy level at the bottom of the conduction band, Φ
BBe schottky barrier height, V is applying bias, and the result of integrating step 604 obtains interface state density N
SsEnergy distribution N
Ss～(E
C-E
Ss).
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. an etching of measuring high Al contents AlGaN material induces the method for interface state parameters, it is characterized in that the method comprises:
Step 10: extension high Al contents AlGaN material on Sapphire Substrate;
Step 20: utilize the ICP lithographic technique that this AlGaN material surface is processed;
Step 30: preparation is based on the schottky diode without etching processing and the processing of process different etching condition of AlGaN material;
Step 40: the I-V characteristic of test AlGaN schottky diode, the resistance in series R of extraction diode
S
Step 50: the C of test AlGaN schottky diode
M-V characteristic is utilized resistance in series R
STo the capacitor C that measures
MProofread and correct, obtain junction capacity C-V characteristic, and utilize this C-V characteristic, extract the schottky barrier height Φ of diode
B
Step 60: test the AlGaN schottky diode in frequency 1kHz≤f≤1MHz scope, the C under the different positive biases
M-f curve; By junction capacity C and interface state capacitor C
pWith depletion-layer capacitance C
SCRelation, obtain the interface state capacitor C under the different bias voltages
p-f curve; By the interface state capacitor C
pWith interface state level density N
SsRelation, interface state energy level E
SsWith respect to the relation of the position at the bottom of the semiconductor surface conduction band and applying bias, obtain interface state density N
SsEnergy distribution N
Ss～(E
C-E
Ss).
2. the etching of measurement high Al contents AlGaN material according to claim 1 induces the method for interface state parameters, it is characterized in that described step 10 comprises:
Step 101: utilize the method epitaxial growth thickness of MOCVD to be in Sapphire Substrate
The AlN cushion;
Step 102: the high Al contents AlGaN material that continues the n-type of the involuntary doping of epitaxial growth at described AlN cushion.
3. the etching of measurement high Al contents AlGaN material according to claim 2 induces the method for interface state parameters, it is characterized in that, the high Al contents AlGaN material of the type of n-described in the step 102 is Al
0.45Ga
0.55N material, thickness are 0.5～1um.
4. the etching of measurement high Al contents AlGaN material according to claim 1 induces the method for interface state parameters, it is characterized in that described step 20 comprises:
Use the ICP lithographic technique to process the AlGaN material surface, obtain the AlGaN material surface that the different etching condition is processed; Etch technological condition is as follows: Cl
2: 20sccm, BCl
3: 10sccm, LF:300W, RF:10W to 60W; Wherein, for measuring different RF power to the impact of the etching injury of AlGaN material surface generation, RF power can be chosen in a certain range.
5. the etching of measurement high Al contents AlGaN material according to claim 1 induces the method for interface state parameters, it is characterized in that described step 30 comprises:
Step 301: at the surperficial spin coating photoresist of the AlGaN material that passes through the different disposal condition, by the Ohmic contact figure of photoetching formation material, utilize electron beam evaporation growth Ti/Al/Ni/Au multiple layer metal, thickness is 350/1200/400/
Peel off rear formation metal ohmic contact;
Step 302: in 750 ℃～850 ℃ temperature ranges, at N
2In the atmosphere Ti/Al/Ni/Au multiple layer metal is carried out rapid thermal annealing, the thermal annealing time is 30 seconds～60 seconds, forms the Ohmic contact of AlGaN material;
Step 303: at the surperficial spin coating photoresist of AlGaN material, by the Schottky contacts figure of photoetching formation material, utilize electron beam evaporation growth Au metal, thickness is
By stripping technology, finish the preparation of the AlGaN material schottky diode of different disposal condition.
6. the etching of measurement high Al contents AlGaN material according to claim 1 induces the method for interface state parameters, it is characterized in that described step 40 comprises:
Step 401: the forward I-V characteristic of utilizing semiconductor parametric tester test AlGaN schottky diode;
Step 402: the I-V family curve that records is put in order, obtained
Curve utilizes formula
Extract
Slope of a curve, thereby the resistance in series R of acquisition AlGaN schottky diode
S, wherein n is the ideal factor of diode.
7. the etching of measurement high Al contents AlGaN material according to claim 1 induces the method for interface state parameters, it is characterized in that described step 50 comprises:
Step 501: be capacitor C with the schottky diode equivalence
MLead G with electricity
MSituation in parallel is utilized the C of anti-AlGaN schottky diode partially time the under the high frequency situations of semiconductor parametric tester test 1MHz
M-V characteristic;
Step 502: utilize formula C=C
M/ [(1-R
SG
M)
2+ (2 π fR
SC
M)
2] electric capacity that test is obtained proofreaies and correct, and obtains junction capacity C-V characteristic, wherein C
MAnd G
MBe respectively the test electric capacity and the electricity that obtain and lead R
sBe resistance in series, f is frequency;
Step 503: put junction capacity C-V characteristic in order distortion, obtain C
-2～V curve; Utilize formula C
-2=2 (V
i-V)/A
2QN
Dε
sCarry out match, wherein A is the Schottky contacts area, N
DBe carrier concentration, ε
sBe the specific inductive capacity of AlGaN material, V
iBe built-in voltage; Extract C
-2The intercept of～V curve obtains V
i, extract C
-2～V slope of a curve, the carrier concentration N of acquisition AlGaN material
DUtilize formula Φ
B=V
i+ ξ+kT/q,
N wherein
CBe AlGaN material conduction band available state density, calculate the schottky barrier height Φ of the AlGaN schottky diode of different disposal condition
B
8. the etching of measurement high Al contents AlGaN material according to claim 1 induces the method for interface state parameters, it is characterized in that described step 60 comprises:
Step 601: test the AlGaN schottky diode in frequency 1kHz≤f≤1MHz scope, the C under the different positive biases
M-f curve;
Step 602: utilize formula C=C
M/ [(1-R
SG
M)
2+ (ω R
SC
M)
2] and resistance in series R
S, obtain junction capacity C-f characteristic;
Step 603: regard junction capacity C as the interface state capacitor C
pWith depletion-layer capacitance C
SCParallel circuit, can get the interface state capacitor C
p=C-C
SC, depletion-layer capacitance C wherein
SCCan obtain by C-f characteristic under the high frequency; Obtain thus the C under the different positive biases
p-f curve;
Step 604: for the interface state of continuous distribution, the interface state capacitor C
pWith interface state level density N
SsThe pass be C
p=qAN
SsTan
-1(2 π f τ)/2 π f τ, wherein A is that Schottky contacts area, τ are the time constant of interface state, by match, obtains interface state density N under the different bias voltages
Ss, τ;
Step 605: for the N-shaped semiconductor, interface state energy level E
SsWith respect to the relation of the position at the bottom of the semiconductor surface conduction band and applying bias by E
C-E
Ss=q (Φ
B-V) provide E wherein
CBe energy level at the bottom of the conduction band, Φ
BBe schottky barrier height, V is applying bias, and the result of integrating step 604 obtains interface state density N
SsEnergy distribution N
Ss～(E
C-E
Ss).
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