CN102936094A - Semiconductor glass for manufacturing microchannel plate - Google Patents
Semiconductor glass for manufacturing microchannel plate Download PDFInfo
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- CN102936094A CN102936094A CN2012104987545A CN201210498754A CN102936094A CN 102936094 A CN102936094 A CN 102936094A CN 2012104987545 A CN2012104987545 A CN 2012104987545A CN 201210498754 A CN201210498754 A CN 201210498754A CN 102936094 A CN102936094 A CN 102936094A
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- microchannel plate
- glass
- pbo
- semiconductor glass
- manufacture
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Abstract
The invention discloses semiconductor glass for manufacturing a microchannel plate. The semiconductor glass comprises the following components in percentage by mass: 60-75 percent of (P2O5+V2O5), 5-25 percent of (FeO+WO3), not more than 4 percent of Sb2O3 and not less than 15 percent of PbO. The semiconductor glass has the advantages that a chemical composition which is stable in glass state and accords with the manufacture requirement of the microchannel plate can be obtained, therefore, the more ideal semiconductor glass of the microchannel plate is formed; the wetting property and the erosion degree to a mullite refractory crucible can be remarkably reduced, corrosion resistance degree in acid treatment in a process of manufacturing the microchannel plate can be improved; the hardness is improved, and the grinding and polishing quality of subsequent processes is ensured; the stability of a transition metal ion valence state in the semiconductor glass can be ensured; and the requirement of the microchannel plate that a semiconductor glass material bulk resistor must be in a range of 5*10<7>-5*10<9>omega can be met.
Description
Technical field
The invention belongs to the semiconducting glass technical field, be specifically related to a kind of semiconducting glass for the manufacture of microchannel plate
Background technology
Above mentioned microchannel plate is the photomultiplier transit element of being made by glass fibre, its profile radius is 20-200 ㎜, thickness is the thin discs (also can make rectangle or foursquare thin slice) of 0.3-2.0 ㎜, be arranged with the microchannel of millions of root holes footpath 5-25 μ m on microchannel plate in the mode of parallel arranged, it is widely used in the detection of low-light level night vision device, X-X-ray Image Intensifiers, single photon counter and photon, electronics, subatomic particle etc.
After the both sides of microchannel plate apply certain voltage, just can be to produce axial electric field in the aforesaid microchannel at each passage, thereby make electronics or the collision of photon conduit wall of each admission passage and produce secondary electron, secondary electron accelerates under the effect of axial electric field, produce more new secondary electron with the conduit wall collision again, thereby produce electron gain along with repeatedly carrying out of this process at output terminal, signal is strengthened.
By as can be known aforementioned, the carrier that microchannel plate relies on is glass fibre, prior art is generally used the lead silicate glass manufacturing, and in published Chinese patent literature, can be seen in, " for the manufacture of the glass of micro-channel plate glass matrix " typically recommended such as application for a patent for invention publication No. CN101913765A, this patent application scheme is owing to having used lead silicate glass, therefore there is following shortcoming: one, because this glass itself is isolator and non-conductive, must in hydrogen, process (high-temperature hydrogen reduction processing) by heat reduction, form conductive layer in microchannel surface, stream of electrons replenishes the conduit wall surface because continuous outwards " secondary electron " of emission of electron impact to transport.At high temperature by the chemical constitution of the wall surface of hydrogen reducing and inner significantly different and cause the microchannel plate stress deformation, and easily cracked in grinding and polishing process subsequently.Omit inching glass in this patent application scheme and form, can not change this hydrogen reduction reaction, stress deformation still exists; Its two because the chemically reactive of the glass reducing zone of tube wall surface is higher, so performance is very unstable.Microchannel plate at work, electric current can only pass through from very thin surface conduction layer, conductive section is very little and current density is very large, causes that the surface is overheated, has more promoted top layer aging and reduction of service life; Its three, the employed raw material of the glass of this patent application is that the alkali and alkaline earth metal ions oxide compound all is to be introduced by its carbonate, discharges CO in the glass melting process
2
The raw material of plumbous oxide need to be equipped with nitrate, discharges O in melting process
2
And NO
2
The raw material of aluminum oxide uses its hydrate usually, discharges H in melting process
2
O.All these gases all can partly remain in the glass of making, and constantly are discharged in the passage with the positive ion form in microchannel plate work, and the noise of output signal is increased.Particularly after high-temperature hydrogen reduction was processed, surface layer of glass contained a large amount of hydrogen and hydrogen-oxygen group, discharges H when microchannel plate is worked
2
And H
2
The positive ion of O.
The composition of US Patent No. 6103648 disclosed body electroconductive glasses and the chemical constitution % content of fiber are: P
2
O
5
38-55%, V
2
O
5
12-33%, FeO10-20% and PbO16-19(specifically can be referring to specification sheets the 6th hurdle the 45th to 49 row of this patent), this patent scheme has been abandoned lead silicate glass, owing to using the semiconducting glass that itself can conduct electricity instead, thereby can eliminate the shortcoming of aforementioned CN10193765A, but still there is following shortcoming: not yet stipulate out for making the applicable glass compositing range of microchannel plate, need to adjust glass and form, lead the vitreum resistance of microchannel plate requirement (5 * 10 to reach the body electricity
7
To 5 * 10
9
Between), and vitreousness stable (not crystallization) and resistive performance are stablized in this compositing range; Reduce simultaneously in the glass smelting process the aggressiveness of Lay stone matter fire-clay crucible container not; Also to improve in the acid treatment process of making microchannel plate technique the erosion resistance of glass; And increase glass hard (HRC65Yi Shang) and improve the grinding and polishing quality in the sanding and polishing process of the termination operation of manufacturing process or title extreme trace operation; In addition, also should adjust glass and form, make transition metal ion valence stability in the semiconducting glass.
In view of above-mentioned prior art, the applicant does lasting and useful exploration, and has done a large amount of experiments, has finally formed technical scheme described below
Summary of the invention
Task of the present invention is to provide a kind of and helps rationally to expand glass and form chemical composition range and significantly improve the semiconducting glass material behavior and use wettability and the erosion degree that effectively reduces crucible used when founding, be conducive to improve anti-corrosion capability and use ensure in the follow-up manufacturing microchannel plate technique to acid-treated adaptability, be of value to and improve hardness and use the sanding and polishing quality that ensures subsequent handling and the semiconducting glass for the manufacture of microchannel plate of the stability of being convenient to promote the transition metal ion valence state is arranged.
Task of the present invention is finished like this, and a kind of semiconducting glass for the manufacture of microchannel plate, its composition are counted proportioning by quality % and be:
（P
2
O
5
+V
2
O
5
） 60-75%；
（FeO+WO
3
） 5-25%；
Sb
2
O
3
≤4%；
PbO ≥15%。
In a specific embodiment of the present invention, described semiconducting glass for the manufacture of microchannel plate, its composition are counted proportioning by quality % and are:
（FeO+WO
3
） 5-25%；
Sb
2
O
3
2-4%；
PbO 15-25%。
In another specific embodiment of the present invention, described semiconducting glass for the manufacture of microchannel plate, its composition are counted proportioning by quality % and are:
P
2
O
5
33%；
V
2
O
5
32%；
WO
3
15%；
Sb
2
O
3
3%；
PbO 17%。
In another specific embodiment of the present invention, described semiconducting glass for the manufacture of microchannel plate, its composition are counted proportioning by quality % and are:
P
2
O
5
55%；
V
2
O
5
14%；
FeO 4%；
WO
3
6%；
Sb
2
O
3
3%；
PbO 18%。
In another specific embodiment of the present invention, described semiconducting glass for the manufacture of microchannel plate, its composition are counted proportioning by quality % and are:
P
2
O
5
40%；
V
2
O
5
20%；
FeO 2%；
WO
3
20%；
Sb
2
O
3
2%；
PbO 16%。
Also have in the specific embodiment of the present invention, described semiconducting glass for the manufacture of microchannel plate, its composition are counted proportioning by quality % and are:
P
2
O
5
37%；
V
2
O
5
27%；
FeO 2%；
WO
3
10%；
Sb
2
O
3
4%；
PbO 20%。
More of the present invention and in specific embodiment, described semiconducting glass for the manufacture of microchannel plate, its composition are counted proportioning by quality % and be:
P
2
O
5
38%；
V
2
O
5
26%；
FeO 3%；
WO
3
16%；
Sb
2
O
3
2%；
PbO 15%。
In of the present invention and then specific embodiment, described semiconducting glass for the manufacture of microchannel plate, its composition are counted proportioning by quality % and are:
P
2
O
5
42.5%；
V
2
O
5
25%；
WO
3
5%；
Sb
2
O
3
2.5%；
PbO 25%。
Of the present invention again more and in specific embodiment, described P
2
O
5
, V
2
O
5
, FeO, PbO, Sb
2
O
3
And WO
3
Be powder.
Technical scheme provided by the invention is owing to having introduced WO in prescription
3
, by WO
3
With P
2
O
5
And the P of PbO formation
2
O
5
-WO
3
In-PbO the three-part system, the compositing range that forms glass is larger, can obtain vitreousness stable, meet the chemical constitution of making microchannel plate, thereby form more satisfactory microchannel plate semiconducting glass; Introduce WO
3
In the glass smelting process, can significantly reduce not wettability and the erosion degree of Lay stone matter fire-clay crucible, and can promote in making microchannel plate technique acid-treated corrosion-resistant degree; Owing in prescription, having introduced Sb
2
O
3
, thereby hardness is improved, ensure the sanding and polishing quality of subsequent handling; Because Sb
2
O
3
Existence, thereby can ensure the stability of transition metal ion valence state in the semiconducting glass; Because prescription is rationally, select materials is proper, thus can satisfy microchannel plate to semi-conductor glass material body resistance 5 * 10
7
～5 * 10
9
The requirement of Ω scope.
Embodiment
For the auditor that the makes Patent Office especially public can be expressly understood technical spirit of the present invention more; the applicant elaborates with preferred embodiment below; so that technique effect of the present invention and corresponding technical characterictic are more distinct; but embodiment does not consist of the restriction to the present invention program, any form of having done according to the present invention and immaterial variation all should be considered as protection scope of the present invention.
Embodiment 1:
A kind of semiconducting glass for the manufacture of microchannel plate, by mass percent proportioning (also can claim " by molecular formula percentage ratio proportioning "), its composition is:
P
2
O
5
33%；
V
2
O
5
32%；
WO
3
15%；
Sb
2
O
3
3%；
PbO 17%。
Embodiment 2:
P
2
O
5
55%；
V
2
O
5
14%；
FeO 4%；
WO
3
6%；
Sb
2
O
3
3%；
PbO 18%。All the other are with the description to embodiment 1.
Embodiment 3:
P
2
O
5
40%；
V
2
O
5
20%；
FeO 2%；
WO
3
20%；
Sb
2
O
3
2%；
PbO 16%。All the other are with the description to embodiment 1.
Embodiment 4:
P
2
O
5
37%；
V
2
O
5
27%；
FeO 2%；
WO
3
10%；
Sb
2
O
3
4%；
PbO 20%。All the other are with the description to embodiment 1.
Embodiment 5:
P
2
O
5
38%
V
2
O
5
26%；
FeO 3%；
WO
3
16%；
Sb
2
O
3
2%；
PbO 15%。All the other are with the description to embodiment 1.
Embodiment 6:
P
2
O
5
42.5%；
V
2
O
5
25%；
WO
3
5%；
Sb
2
O
3
2.5%；
PbO 25%。All the other are with the description to embodiment 1.
Above-mentioned arbitrary embodiment adopts P
2
O
5
, V
2
O
5
, FeO, PbO, Sb
2
O
3
And WO
3
Powder compound as the raw material of fusion cast glass.When making microchannel plate by the semiconducting glass for the manufacture of microchannel plate of arbitrary embodiment of above-described embodiment 1 to 6, raw material is mixed and under whipped state, melt, the glass melt that fusing is obtained pours in the mould, depanning is by annealing, wire drawing after the annealing namely obtains the semi conducting glass fibre of using for the manufacture of microchannel plate.
In sum, technical scheme provided by the invention has overcome the shortcoming in the prior art objectively, has finished the invention task, has embodied all sidedly the technique effect described in the superincumbent technique effect of the applicant hurdle, and after tested, the body resistance of semiconducting glass material is all 5 * 10
7
To 5 * 10
9
The Ω scope meets the body electricity and leads microchannel plate to the resistance requirement of glass material itself
Claims (9)
1.
A kind of semiconducting glass for the manufacture of microchannel plate is characterized in that its composition counts proportioning by quality % and be:
（P
2
O
5
+V
2
O
5
） 60-75%；
（FeO+WO
3
） 5-25%；
Sb
2
O
3
≤4%；
PbO ≥15%。
2.
Semiconducting glass for the manufacture of microchannel plate according to claim 1 is characterized in that its composition counts proportioning by quality % and be:
（FeO+WO
3
） 5-25%；
Sb
2
O
3
2-4%；
PbO 15-25%。
3.
Semiconducting glass for the manufacture of microchannel plate according to claim 1 and 2 is characterized in that its composition counts proportioning by quality % and be:
P
2
O
5
33%；
V
2
O
5
32%；
WO
3
15%；
Sb
2
O
3
3%；
PbO 17%。
4.
Semiconducting glass for the manufacture of microchannel plate according to claim 1 and 2 is characterized in that its composition counts proportioning by quality % and be:
P
2
O
5
55%；
V
2
O
5
14%；
FeO 4%；
WO
3
6%；
Sb
2
O
3
3%；
PbO 18%。
5.
Semiconducting glass for the manufacture of microchannel plate according to claim 1 and 2 is characterized in that its composition counts proportioning by quality % and be:
P
2
O
5
40%；
V
2
O
5
20%；
FeO 2%；
WO
3
20%；
Sb
2
O
3
2%；
PbO 16%。
6.
Semiconducting glass for the manufacture of microchannel plate according to claim 1 and 2 is characterized in that its composition counts proportioning by quality % and be:
P
2
O
5
37%；
V
2
O
5
27%；
FeO 2%；
WO
3
10%；
Sb
2
O
3
4%；
PbO 20%。
7.
Semiconducting glass for the manufacture of microchannel plate according to claim 1 and 2 is characterized in that its composition counts proportioning by quality % and be:
P
2
O
5
38%；
V
2
O
5
26%；
FeO 3%；
WO
3
16%；
Sb
2
O
3
2%；
PbO 15%。
8.
Semiconducting glass for the manufacture of microchannel plate according to claim 1 and 2 is characterized in that its composition counts proportioning by quality % and be: P 2 O 5 42.5%; V 2 O 5 25%; WO 3 5%; Sb 2 O 3 2.5%; PbO 25%.
9.
Semiconducting glass for the manufacture of microchannel plate according to claim 1 and 2 is characterized in that described P 2 O 5 , V 2 O 5 , FeO, PbO, Sb 2 O 3 And WO 3 Be powder
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104987545A CN102936094A (en) | 2012-11-30 | 2012-11-30 | Semiconductor glass for manufacturing microchannel plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104987545A CN102936094A (en) | 2012-11-30 | 2012-11-30 | Semiconductor glass for manufacturing microchannel plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102936094A true CN102936094A (en) | 2013-02-20 |
Family
ID=47695030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104987545A Pending CN102936094A (en) | 2012-11-30 | 2012-11-30 | Semiconductor glass for manufacturing microchannel plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102936094A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3910796A (en) * | 1973-03-05 | 1975-10-07 | Hoya Glass Works Ltd | Secondary electron multiplier glass |
| WO1999061381A1 (en) * | 1998-05-28 | 1999-12-02 | Circon Corporation | Bulk conducting glass compositions and fibers |
-
2012
- 2012-11-30 CN CN2012104987545A patent/CN102936094A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3910796A (en) * | 1973-03-05 | 1975-10-07 | Hoya Glass Works Ltd | Secondary electron multiplier glass |
| WO1999061381A1 (en) * | 1998-05-28 | 1999-12-02 | Circon Corporation | Bulk conducting glass compositions and fibers |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
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Application publication date: 20130220 |