CN102931965A - Circuit for turning on and off sensor - Google Patents

Circuit for turning on and off sensor Download PDF

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Publication number
CN102931965A
CN102931965A CN2012104103328A CN201210410332A CN102931965A CN 102931965 A CN102931965 A CN 102931965A CN 2012104103328 A CN2012104103328 A CN 2012104103328A CN 201210410332 A CN201210410332 A CN 201210410332A CN 102931965 A CN102931965 A CN 102931965A
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China
Prior art keywords
current source
tmr element
resistance
electrically connected
circuit
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Pending
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CN2012104103328A
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Chinese (zh)
Inventor
钟小军
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WUXI LEER TECHNOLOGY Co Ltd
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WUXI LEER TECHNOLOGY Co Ltd
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Priority to CN2012104103328A priority Critical patent/CN102931965A/en
Publication of CN102931965A publication Critical patent/CN102931965A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a circuit for turning on and off a sensor. The circuit comprises an TMR (triple modular redundancy) element (1), a resistor (2), a first current source (3) and a second current source (4), wherein the TMR element (1) is electrically connected with the first current source (3); the resistor (2) is electrically connected with the second current source (4); the TMR element (1) is electrically connected with the resistor (2); the first current source (3) is electrically connected with the second current source (4); the TMR element (1), the resistor (2), the first current source (3) and the second current source (4) are respectively used as a bridge arm and electrically connected to form an electric bridge; the temperature coefficient of the TMR element (1) is matched with that of the resistor (2); the first current source (3) and the second current source (4) are used for supplying constant current; the resistor (2) is used for supplying a resistance value matched with the TMR element (1); and the TMR element (1) is used for inducing changes of an external magnetic field. The circuit is low in power consumption, when the input voltage of the circuit is 3V, the power consumption of the circuit is less than or equal to 5mu W; and the power consumption of the circuit is not influenced by the resistance values of the TMR element and resistor.

Description

A kind of circuit for switch sensor
Technical field
The present invention relates to the switch sensor technical field, particularly a kind of circuit for switch sensor.
Background technology
The application of switch sensor in industry is very extensive.In the prior art, the power consumption of the circuit of switch sensor is higher.When the input voltage of switch sensor was 3V, even add dormant circuit in the switch sensor, its power consumption still can't reach below the 3 μ W, and the dormant circuit of adding can make the response speed of the circuit of switch sensor reduce on the contrary.
At present, it is lower and can keep the circuit that is used for switch sensor of certain response speed to be starved of a kind of power consumption.
Summary of the invention
The purpose of this invention is to provide a kind of circuit for switch sensor.
Circuit for switch sensor provided by the invention comprises TMR element, resistance, the first current source and the second current source, described TMR element is electrically connected with described the first current source, described resistance is electrically connected with described the second current source, described TMR element is electrically connected with described resistance, described the first current source is electrically connected with described the second current source, and described TMR element, described resistance, described the first current source and described the second current source are respectively as the brachium pontis electric bridge that is electrically connected to form;
The temperature coefficient of described TMR element and described resistance mates mutually, described the first current source and described the second current source are used for providing constant electric current, described resistance is used for providing the resistance value of mating with described TMR element, and described TMR element is used for the variation of induction external magnetic field.
Preferably, described TMR element is connected with power supply with node between the described resistance; Node ground connection between described the first current source and described the second current source.
Preferably, the node ground connection between described TMR element and the described resistance; Described the first current source is connected with power supply with node between described the second current source.
Preferably, described circuit also comprises variable gain amplifier and comparator, described TMR element is electrically connected with the input of described variable gain amplifier with node between described the first current source, the output of described variable gain amplifier is electrically connected with the first input end of described comparator, and described resistance is electrically connected with the second input of described comparator with node between described the second current source.
The present invention has following beneficial effect:
(1) described circuit adopts the current drive-type bridge structure, and it is output as difference output, and therefore the power consumption of described circuit is lower, when the input voltage of described circuit is 3V, is not adding in the situation of dormant circuit, and the power consumption of described circuit is less than or equal to 5 μ W;
(2) the resistance value size of the power consumption of described circuit and TMR element and resistance is without direct relation, and namely the power consumption of described circuit is not subjected to the impact of the resistance value size of TMR element and resistance;
(3) described circuit can realize comprising the bridge structure of single TMR element, so that the manufacture craft of the TMR element that adopts in the described circuit is simplified;
(4) described circuit can be saved the size of its packaging body.
Description of drawings
The circuit diagram that is used for switch sensor that Fig. 1 provides for the embodiment of the invention 1;
The circuit diagram that is used for switch sensor that Fig. 2 provides for the embodiment of the invention 2;
The circuit diagram that is used for switch sensor that Fig. 3 provides for the embodiment of the invention 3;
The circuit diagram that is used for switch sensor that Fig. 4 provides for the embodiment of the invention 4.
Embodiment
Below in conjunction with drawings and Examples content of the present invention is further described.
Embodiment 1
As shown in Figure 1, the circuit that is used for switch sensor that present embodiment provides comprises TMR (tunnel magneto resistance) element 1, resistance 2, the first current source 3 and the second current source 4.TMR element 1 is electrically connected with the first current source 3.Resistance 2 is electrically connected with the second current source 4.TMR element 1 is electrically connected with resistance 2, and TMR element 1 is connected with for example power supply (not shown) with node between the resistance 2.The first current source 3 is electrically connected with the second current source 4, and the ground connection for example of the node between the first current source 3 and the second current source 4.TMR element 1, resistance 2, the first current source 3 and the second current source 4 are respectively as the brachium pontis electric bridge that is electrically connected to form.The output of this electric bridge is Out1 and Out2.
TMR element 1 mates mutually with the temperature coefficient of resistance 2.The first current source 3 and the second current source 4 are used for providing constant electric current.Resistance 2 is used for providing the resistance value of mating with TMR element 1.TMR element 1 is used for the variation of induction external magnetic field, and the resistance value of TMR element 1 changes with the variation of external magnetic field, thereby makes the output Out1 output voltage signal of electric bridge.During use, by the resistance value size of regulating resistance 2, can make the suitable switching threshold signal of output Out2 output of electric bridge.
Embodiment 2
As shown in Figure 2, the circuit that is used for switch sensor that present embodiment provides comprises TMR element 1, resistance 2, the first current source 3 and the second current source 4.TMR element 1 is electrically connected with the first current source 3.Resistance 2 is electrically connected with the second current source 4.TMR element 1 is electrically connected with resistance 2, and the ground connection for example of the node between TMR element 1 and the resistance 2.The first current source 3 is electrically connected with the second current source 4, and the first current source 3 for example is connected with the power supply (not shown) with node between the second current source 4.TMR element 1, resistance 2, the first current source 3 and the second current source 4 are respectively as the brachium pontis electric bridge that is electrically connected to form.The output of this electric bridge is Out1 and Out2.
TMR element 1 mates mutually with the temperature coefficient of resistance 2.The first current source 3 and the second current source 4 are used for providing constant electric current.Resistance 2 is used for providing the resistance value of mating with TMR element 1.TMR element 1 is used for the variation of induction external magnetic field, and the resistance value of TMR element 1 changes with the variation of external magnetic field, thereby makes the output Out1 output voltage signal of electric bridge.During use, by the resistance value size of regulating resistance 2, can make the suitable switching threshold signal of output Out2 output of electric bridge.
Embodiment 3
As shown in Figure 3, the circuit that is used for switch sensor that present embodiment provides comprises TMR element 1, resistance 2, the first current source 3, the second current source 4, variable gain amplifier (VGA) 5 and comparator 6.TMR element 1 is electrically connected with the first current source 3.Resistance 2 is electrically connected with the second current source 4.TMR element 1 is electrically connected with resistance 2, and TMR element 1 for example is connected with the power supply (not shown) with node between the resistance 2.The first current source 3 is electrically connected with the second current source 4, and the ground connection for example of the node between the first current source 3 and the second current source 4.TMR element 1, resistance 2, the first current source 3 and the second current source 4 are respectively as the brachium pontis electric bridge that is electrically connected to form.TMR element 1 and node between the first current source 3 are that the output Out1 of electric bridge is electrically connected with the input of variable gain amplifier 5, the output of variable gain amplifier 5 is electrically connected with the first input end of comparator 6, resistance 2 and node between the second current source 4 are that the output Out2 of electric bridge is electrically connected with the second input of comparator 6, and the output of comparator 6 is Out.
TMR element 1 mates mutually with the temperature coefficient of resistance 2.The first current source 3 and the second current source 4 are used for providing constant electric current.Resistance 2 is used for providing the resistance value of mating with TMR element 1.TMR element 1 is used for the variation of induction external magnetic field, and the resistance value of TMR element 1 changes with the variation of external magnetic field, thereby makes the output Out1 output voltage signal of electric bridge.During use, by the resistance value size of regulating resistance 2, can make the suitable switching threshold signal of output Out2 output of electric bridge.The signal of the output Out1 output of electric bridge is sent into the first input end of comparator 6 after variable gain amplifier 5 amplifies, the switching threshold signal of the output Out2 output of electric bridge is sent into the second input of comparator 6.Comparator 6 compares the signal of its first input end input and the switching threshold signal of the second input input rear by output Out output switching signal.
Embodiment 4
As shown in Figure 4, the circuit that is used for switch sensor that present embodiment provides comprises TMR element 1, resistance 2, the first current source 3, the second current source 4, variable gain amplifier 5 and comparator 6.TMR element 1 is electrically connected with the first current source 3.Resistance 2 is electrically connected with the second current source 4.TMR element 1 is electrically connected with resistance 2, and the ground connection for example of the node between TMR element 1 and the resistance 2.The first current source 3 is electrically connected with the second current source 4, and the first current source 3 is electrically connected with for example power supply (not shown) with node between the second current source 4.TMR element 1, resistance 2, the first current source 3 and the second current source 4 are respectively as the brachium pontis electric bridge that is electrically connected to form.TMR element 1 and node between the first current source 3 are that the output Out1 of electric bridge is electrically connected with the input of variable gain amplifier 5, the output of variable gain amplifier 5 is electrically connected with the first input end of comparator 6, resistance 2 and node between the second current source 4 are that the output Out2 of electric bridge is electrically connected with the second input of comparator 6, and the output of comparator 6 is Out.
TMR element 1 mates mutually with the temperature coefficient of resistance 2.The first current source 3 and the second current source 4 are used for providing constant electric current.Resistance 2 is used for providing the resistance value of mating with TMR element 1.TMR element 1 is used for the variation of induction external magnetic field, and the resistance value of TMR element 1 changes with the variation of external magnetic field, thereby makes the output Out1 output voltage signal of electric bridge.During use, by the resistance value size of regulating resistance 2, can make the suitable switching threshold signal of output Out2 output of electric bridge.The signal of the output Out1 output of electric bridge is sent into the first input end of comparator 6 after variable gain amplifier 5 amplifies, the switching threshold signal of the output Out2 output of electric bridge is sent into the second input of comparator 6.Comparator 6 compares the signal of its first input end input and the switching threshold signal of the second input input rear by output Out output switching signal.
Described circuit adopts the current drive-type bridge structure, and it is output as difference output, and therefore the power consumption of described circuit is lower, when the input voltage of described circuit is 3V, is not adding in the situation of dormant circuit, and the power consumption of described circuit is less than or equal to 5 μ W.The resistance value size of the power consumption of described circuit and TMR element and resistance is without direct relation, and namely the power consumption of described circuit is not subjected to the impact of the resistance value size of TMR element and resistance.Described circuit can realize comprising the bridge structure of single TMR element, so that the manufacture craft of the TMR element that adopts in the described circuit is simplified.Described circuit can be saved the size of its packaging body.
Should be appreciated that the above detailed description of technical scheme of the present invention being carried out by preferred embodiment is illustrative and not restrictive.Those of ordinary skill in the art is reading on the basis of specification of the present invention and can make amendment to the technical scheme that each embodiment puts down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.

Claims (4)

1. the circuit that is used for switch sensor, it is characterized in that, this circuit comprises TMR element (1), resistance (2), the first current source (3) and the second current source (4), described TMR element (1) is electrically connected with described the first current source (3), described resistance (2) is electrically connected with described the second current source (4), described TMR element (1) is electrically connected with described resistance (2), described the first current source (3) is electrically connected with described the second current source (4), described TMR element (1), described resistance (2), described the first current source (3) and described the second current source (4) are respectively as the brachium pontis electric bridge that is electrically connected to form;
Described TMR element (1) mates mutually with the temperature coefficient of described resistance (2), described the first current source (3) and described the second current source (4) are used for providing constant electric current, described resistance (2) is used for providing the resistance value of mating with described TMR element (1), and described TMR element (1) is used for the variation of induction external magnetic field.
2. the circuit for switch sensor according to claim 1 is characterized in that, described TMR element (1) is connected with power supply with node between the described resistance (2); Node ground connection between described the first current source (3) and described the second current source (4).
3. the circuit for switch sensor according to claim 1 is characterized in that, the node ground connection between described TMR element (1) and the described resistance (2); Described the first current source (3) is connected with power supply with node between described the second current source (4).
4. according to claim 2 or 3 described circuit for switch sensor, it is characterized in that, described circuit also comprises variable gain amplifier (5) and comparator (6), described TMR element (1) is electrically connected with the input of described variable gain amplifier (5) with node between described the first current source (3), the output of described variable gain amplifier (5) is electrically connected with the first input end of described comparator (6), and described resistance (2) is electrically connected with the second input of described comparator (6) with node between described the second current source (4).
CN2012104103328A 2012-10-24 2012-10-24 Circuit for turning on and off sensor Pending CN102931965A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06187617A (en) * 1992-12-17 1994-07-08 Murata Mfg Co Ltd Magnetic card reader sensor
US5402064A (en) * 1992-09-02 1995-03-28 Santa Barbara Research Center Magnetoresistive sensor circuit with high output voltage swing and temperature compensation
CN1251171A (en) * 1996-08-16 2000-04-19 恒生电子公司 Magnetic current sensor
US6636036B1 (en) * 1998-02-25 2003-10-21 Delphi Technologies, Inc. Sensor with signal amplitude adaptive hysteresis
US20060267582A1 (en) * 2005-05-27 2006-11-30 O'brien Scott M Resistance mode comparator for determining head resistance
US20100026288A1 (en) * 2008-07-31 2010-02-04 John Sauber Electronic Circuit and Method for Resetting a Magnetoresistance Element
CN202889316U (en) * 2012-10-24 2013-04-17 无锡乐尔科技有限公司 Circuit for switch sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5402064A (en) * 1992-09-02 1995-03-28 Santa Barbara Research Center Magnetoresistive sensor circuit with high output voltage swing and temperature compensation
JPH06187617A (en) * 1992-12-17 1994-07-08 Murata Mfg Co Ltd Magnetic card reader sensor
CN1251171A (en) * 1996-08-16 2000-04-19 恒生电子公司 Magnetic current sensor
US6636036B1 (en) * 1998-02-25 2003-10-21 Delphi Technologies, Inc. Sensor with signal amplitude adaptive hysteresis
US20060267582A1 (en) * 2005-05-27 2006-11-30 O'brien Scott M Resistance mode comparator for determining head resistance
US20100026288A1 (en) * 2008-07-31 2010-02-04 John Sauber Electronic Circuit and Method for Resetting a Magnetoresistance Element
CN202889316U (en) * 2012-10-24 2013-04-17 无锡乐尔科技有限公司 Circuit for switch sensor

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Application publication date: 20130213