CN102931646B - Circuit brake and preparation method thereof - Google Patents
Circuit brake and preparation method thereof Download PDFInfo
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- CN102931646B CN102931646B CN201110227685.XA CN201110227685A CN102931646B CN 102931646 B CN102931646 B CN 102931646B CN 201110227685 A CN201110227685 A CN 201110227685A CN 102931646 B CN102931646 B CN 102931646B
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Abstract
The present invention relates to a kind of circuit brake and preparation method thereof.This circuit brake comprises: a diode, has the first electrode and the second electrode back to described first electrode; A thermistor with ptc characteristics, be positioned at described diode second electrode side, described thermistor has third electrode and the 4th electrode, and wherein said third electrode and described second electrode are with heat conduction and be connected conductively; A lead frame, be positioned at described diode first electrode side, described lead frame has multiple pin, for drawing electric respectively to described first electrode, described second electrode, described third electrode and described 4th electrode.
Description
Technical field
The present invention relates to technical field of electronic devices, more specifically, the present invention relates to a kind of circuit brake and preparation method thereof.
Background technology
In circuit, electronic component or electric equipment all have specified operating voltage and operating current usually.Such as, but due to a variety of causes, power-supply fluctuation, short circuit etc., these electronic components or electronic equipment are operated in inadequately under overload sometimes and break down.Break down in order to avoid electronic component or electronic equipment and cause damaging, circuit brake can be used to come voltage in limiting circuit and electric current.
Circuit brake comprises at least one in overflow protecting element or over-voltage protection element usually.Zener diode (being also called voltage stabilizing didoe) is namely a kind of typical over-voltage protection element, and it is usually with the mode place in circuit with element in parallel to be protected.When the voltage being carried in Zener diode two ends does not exceed disruptive critical voltage, Zener diode has very high resistance value, and the electric current flowing through it is minimum, and therefore the access of Zener diode can not affect the normal work of element to be protected; But when voltage exceedes disruptive critical voltage, the resistance value of Zener diode can be reduced to a very little value, the voltage at its two ends then can by clamper exactly in a fixed value, thus make the operating voltage of element to be protected to exceed rated voltage.Positive temperature coefficient (Positive Temperature Coefficient, PTC) thermistor is then a kind of typical overflow protecting element, and it is usually with the form place in circuit of connecting with element to be protected.When the electric current flowing through PTC thermistor exceedes operating current (such as overload current), the heat that this electric current produces makes the temperature of PTC thermistor raise gradually; Resistance value corresponding increase along with temperature rising of thermistor, this makes the electric current flowing through it reduce gradually and is finally turned off (this process is also called " action "), thus the overcurrent protection of realizing circuit.
A kind of known circuit brake has been combined Zener diode and PTC thermistor.Operationally, PTC thermistor is connected with element to be protected in a series arrangement, and Zener diode is connected with element to be protected with parallel way; Meanwhile, these two mutual thermal couplings of element are to realize hot link.When Zener diode both end voltage exceedes rated voltage, it is by output voltage clamper in fixed value, and the electric current simultaneously flowing through it increases, thus makes Zener diode significantly generate heat and heat up.The heat that Zener diode generates is conducted to PTC thermistor, thus the temperature of PTC thermistor is raised and the corresponding increase of resistance value, until turn off to realize overcurrent protection.
This circuit brake adopts surface mounting technology (Surface MountedTechnology) usually, is namely drawn each electrode in chip by lead frame (Leadframe).With reference to figure 1, show a kind of circuit brake of prior art.This circuit brake comprises Zener diode 11, PTC thermistor 12 and lead frame 13 from top to bottom successively.Wherein, Zener diode 11 comprises the first electrode 11a and the second electrode 11b, wherein, side second electrode 11b is connected by radium-shine hole (not shown) with heat conduction with PTC thermistor 12, the first electrode 11a of opposite side then need to insulate through or walk around PTC thermistor 12 and just can be connected to pin in lead frame 13.The manufacturing process of this device is complicated, and cost of manufacture is high.In addition, this circuit brake adopts plastic package process by Zener diode 11 packaging protection, but the treatment temperature of plastic package process and processing pressure higher, can have an impact to the performance of PTC thermistor 12.
Summary of the invention
In order to solve the problem, according to an aspect of the present invention, provide a kind of circuit brake, comprising: a diode, there is the first electrode and the second electrode back to described first electrode; A thermistor with ptc characteristics, be positioned at described diode second electrode side, described thermistor has third electrode and the 4th electrode, and wherein said third electrode and described second electrode are with heat conduction and be connected conductively; A lead frame, be positioned at described diode first electrode side, described lead frame has multiple pin, for drawing electric respectively to described first electrode, described second electrode, described third electrode and described 4th electrode.
According to one embodiment of present invention, described circuit brake also comprises packaging part, and between described thermistor and described lead frame, it is for encapsulating described diode.Alternatively, described packaging part comprises the thermosets of such as epoxy resin.Preferably, described packaging part adopts fill process to be formed.
According to one embodiment of present invention; described circuit brake also comprises the multiple conductive through holes through described packaging part, and described multiple conductive through hole is used for described third electrode to be connected conductively with the pin in described lead frame respectively with described 4th electrode.
According to one embodiment of present invention, described second electrode is connected by solder or conducting resinl with described third electrode.
According to a further aspect in the invention, provide a kind of manufacture method of circuit brake, comprise the steps: on the substrate of thermistor, to connect diode to make described thermistor and described diode with heat conduction and to be connected conductively; Fill encapsulating material on the substrate to encapsulate described diode; In described encapsulating material, form multiple conductive through hole draw described thermistor and described diode with electricity; Described encapsulating material installs lead frame.
According to one embodiment of present invention, described diode comprises the first electrode and the second electrode back to described first electrode, described thermistor has the third electrode and the 4th electrode that lay respectively at described substrate both side surface, the wherein said diode that connects on the substrate of thermistor to make described thermistor and described diode with heat conduction and the step be connected conductively comprises the steps: by described second electrode and described third electrode with heat conduction and be connected conductively further, and makes described third electrode partly expose.
According to one embodiment of present invention, described encapsulating material comprises the thermosets of such as epoxy resin.Alternatively, fill encapsulating material on the substrate to comprise with the step encapsulating described diode: apply encapsulating material on the substrate; Heat-treat to solidify described encapsulating material to described encapsulating material.
Compared to traditional circuit brake, thermistor is placed in top device by circuit brake of the present invention, and thus when action, thermistor both sides can not be subject to significant pressure effect and affect its performance., be arranged on by diode between thermistor and lead frame, the pin of the electrode and lead frame of being convenient to diode is connected meanwhile; And thermistor has the chip area larger relative to diode usually, therefore, the electrode of thermistor is easy to walk around diode and is connected to lead frame, and this just correspondingly reduces the technology difficulty of the electrode of drawing thermistor.In addition, fill process can be adopted to encapsulate diode, the treatment temperature that fill process is lower decreases the impact of encapsulation diode pair thermistor performance.In addition; instead of traditional radium-shine hole, in circuit brake of the present invention, thermistor is directly connected by such as solder or conducting resinl with diode; this effectively reduces the thermal resistance of thermally-conductive interface between thermistor and diode, thus improves the efficiency of thermal coupling.
Embodiment part is hereinafter set forth by above characteristic of the present invention and other characteristics clearly.
Accompanying drawing explanation
Read the following detailed description to non-limiting example by referring to accompanying drawing, more easily can understand features, objects and advantages of the invention.Wherein, same or analogous Reference numeral represents same or analogous device.
Fig. 1 shows a kind of circuit brake of prior art;
Fig. 2 a shows the decomposing schematic representation of the circuit brake according to the embodiment of the present invention;
Fig. 2 b shows the schematic cross-section of the circuit brake according to the embodiment of the present invention;
Fig. 3 shows the circuit diagram of the circuit brake according to the embodiment of the present invention;
Fig. 4 shows the manufacture method of the circuit brake according to the embodiment of the present invention;
Fig. 5 a to Fig. 5 d shows the schematic cross-section of circuit brake in the circuit brake Making programme according to the embodiment of the present invention.
Embodiment
Discuss enforcement and the use of embodiment below in detail.But, should be appreciated that discussed specific embodiment only exemplarily illustrates and implement and use ad hoc fashion of the present invention, but not limit the scope of the invention.
Fig. 2 a and Fig. 2 b shows the circuit brake 200 according to the embodiment of the present invention.Wherein, Fig. 2 a is the decomposing schematic representation of this circuit brake 200, and Fig. 2 b is the schematic cross-section of this circuit brake 200.Next, the circuit brake 200 of composition graphs 2a and Fig. 2 b to the embodiment of the present invention is described.
As shown in Fig. 2 a and Fig. 2 b, this circuit brake 200 comprises:
A diode 201, it has the first electrode 201a and the second electrode 201b back to this first electrode 201a;
A thermistor 202 with ptc characteristics, it is positioned at this diode 201 second electrode 201b side, this thermistor 202 has third electrode 202a and the 4th electrode 202b, and wherein the second electrode 201b of this third electrode 202a and diode 201 with heat conduction and be connected conductively;
A lead frame 203, it is positioned at this diode 201 first electrode 201a side, and this lead frame 203 has multiple pin, for drawing electric respectively to this first electrode 201a, the second electrode 201b, third electrode 202a and the 4th electrode 202b.Wherein, because the second electrode 201b is connected conductively with third electrode 202a, therefore, preferably, by a pin, these two electrode electricity can be drawn.
Specifically, diode 201 comprises P type doped region and N-type doped region, and the interface of this P type doped region and N-type doped region defines PN junction.The two ends that diode 201 is positioned at P type doped region and N-type doped region constitute respectively mutually back to the first electrode 201a and the second electrode 201b.In one embodiment, diode 201 is Zener diodes, and the first electrode 201a is positioned at P type doped region, and the second electrode 201b is positioned at N-type doped region, and namely the first electrode 201a is the P pole of diode 201, and the second electrode 201b is the N pole of diode 201.Be appreciated that the difference according to physical circuit connected mode, the difference of the particularly difference of input voltage polarity, and diode 201 functional characteristic, the first electrode 201a also can be positioned at N-type doped region, and the second electrode 201b is then correspondingly positioned at P type doped region.Be appreciated that the structure of diode 201 is not limited to this, it can also be such as the diode that employing surface processing technique is obtained, and this first electrode 201a and the second electrode 201b leads to the both sides of diode 201 by such as metal interconnecting wires.
The thermistor 202 with ptc characteristics can be the polymer thermo-sensitive material of conduction, or based on the ceramic thermo-sensitive material of such as barium titanate.The resistance value of this thermistor 202 when low temperature is lower, but at high temperature, ohm heat such as caused by big current, can make its resistance value raise; But when being cooled to initial temperature, this thermistor 202 can reply low resistive state again, can think that it is " can reset ".Therefore, thermistor 202 is a kind of desirable overflow protecting elements.
In the present embodiment, the shape of thermistor 202 is tabular, wherein include the polymer thermo-sensitive material of one deck ptc characteristics, third electrode 202a and the 4th electrode 202b lays respectively at the surface of thermistor 202 both sides, i.e. the both sides of this heat-sensitive material layer.In one embodiment, heat-sensitive material layer both sides are coated with one deck conductive layer respectively, and wherein, one end of each conductive layer all has a groove, with the Part I and the Part II that make this conductive layer be separated into electric isolation.Be enclosed with a conducting terminal respectively at the two ends of heat-sensitive material layer, this conducting terminal is respectively used to the Part I of an extraction conductive layer, each conducting terminal and together constitute an electrode of thermistor 202 with the Part I of conductive layer.When loading electrical potential difference at thermistor 202 two ends, between two conductive layers, namely can form the electric field being substantially perpendicular to heat-sensitive material layer between third electrode 202a and the 4th electrode 202b, and form electric current betwixt.Be appreciated that the structure of above-mentioned thermistor 202 is only example, in actual applications, thermistor 202 can also adopt other thermo-sensitive materials of such as ceramic thermo-sensitive material, and corresponding chip structure, should not limit its scope.
In actual applications, thermistor is because of overcurrent during action, and deformation (expansion) can slightly occur for it.For traditional circuit protection device, thermistor is arranged at the centre of lead frame and diode, and therefore, the deformation of thermistor can be subject to the restriction (extruding) of two ends lead frame and diode, and this can reduce the performance of thermistor.And for circuit brake 200 of the present invention; because thermistor 202 is arranged at the top of circuit brake 200; when deformation occurs because of action thermistor 202, thermistor 202 can not be squeezed substantially, and thus this deformation can not affect the performance of thermistor 202.Therefore, compared to traditional circuit brake, circuit brake 200 of the present invention has better performance, particularly overcurrent protection performance.
In circuit brake 200, the connection that the second electrode 201b and third electrode 202a conducts electricity, such as, welded by brazing metal, and be electrically connected to a pin of lead frame 203, thus by jointly electricity extraction.Meanwhile, the connection of third electrode 202a and the second electrode 201b also heat conduction, its can adopt heat conducting mode by heat conductivility preferably material be interconnected, such as connected by brazing metal.Be appreciated that the connection of heat conduction between the second electrode 201b and the first electrode 202a makes in fact the connection of the mutual heat conduction of thermistor 202 and diode 201, to carry out heat exchange.Can find out, brazing metal, such as tin, there is good electrical and thermal conductivity performance, it can reduce the thermal resistance between diode 201 and thermistor 202 effectively, and can reduce the spacing of both, is therefore particularly suitable for connection second electrode 201b and third electrode 202a.Thermal resistance lower between diode 201 and thermistor 202 effectively can improve the speed of diode 201 and thermistor 202 heat-shift, and then improves the speed of actions of thermistor 202, more promptly to carry out the overcurrent protection of circuit.Be appreciated that other heat-conductivity conducting material, the conducting resinl such as with good heat conductive performance also may be used for connection second electrode 201b and third electrode 202a, should not limit its scope.
Also comprise the packaging part 204 between thermistor 201 and lead frame 203 in circuit brake 200, it is for encapsulating diode 201.Chip area due to diode 201 is less than the chip area of thermistor 202 usually; therefore this packaging part 204 is positioned to wrap up the surface (i.e. the surface at non-first electrode 201a and the second electrode 201b place) of this diode 201 around diode 201, thus realizes the protection to diode 201 chip.In an optional embodiment, packaging part 204 can adopt the thermosets such as such as epoxy resin, and it can be formed by fill process.Because the treatment temperature of fill process is lower, such as, lower than 150 degrees Celsius, therefore, the PROCESS FOR TREATMENT forming packaging part 204 can not affect the performance of thermistor 201, particularly adopts the thermistor of polymer thermo-sensitive material.This makes the rate of finished products of circuit brake 200 effectively improve.
As can be seen from Fig. 2 b, the first electrode 201a of diode 201 and the position of lead frame 203 close, it directly can be electrically connected with the pin in lead frame 203 by mode of such as brazing metal welding.And other electrodes, comprise the second electrode 201b and third electrode 202a that are electrically connected to each other, and the 4th electrode 202b of thermistor 202, then need to be connected to lead frame 203 by conductive lead wire.In the embodiment shown in Fig. 2 a and Fig. 2 b, the pin that these electrodes away from lead frame 203 can be corresponding with lead frame 203 by the multiple conductive through holes 205 through packaging part 204 connects conductively.Alternatively, this conductive through hole 205 can adopt the metal materials such as such as copper.Be appreciated that the difference of the first electrode 201a position according to conductive through hole 205 and diode 201, the position of each pin in lead frame 203 is also different.In the embodiment shown in Fig. 2 a, the pin be connected with the first electrode 201a is arranged on the centre position of lead frame 203, and the pin be connected with conductive through hole 205 is then arranged on the marginal position of lead frame 203.And in other examples, by changing the structural design of lead frame 203, the pin be connected with the first electrode 201a also can be arranged on the non-intermediate positions of lead frame 203, should not limit its scope.
In addition, in actual applications, the surface of circuit brake 200 both sides, namely thermistor 202 is away from the surface of diode 201 side and packaging part 204 away from the surface of diode 201 side, usually also comprises solder mask (not shown).This solder mask only makes each pin in lead frame 203 expose.When circuit brake 200 is installed on (being such as welded to) circuit board, the short circuit that this solder mask can be prevented the non-pinned region due to circuit brake 200 to be connected (such as being connected by scolding tin) with circuit board and cause.
Fig. 3 shows the circuit diagram of the circuit brake according to the embodiment of the present invention.As shown in Figure 3, the connection that the second electrode of diode 301 (being specially Zener diode) and the third electrode of thermistor 302 conduct electricity, and draw as the output pin 311 of this circuit brake.4th electrode of thermistor 302 is drawn as the input pin 312 of this circuit brake; First electrode of diode 301 is then drawn as grounding pin 313.
When place in circuit, the conducting direction of diode 301 is usually contrary with the direction of input voltage, and namely input pin 312 is connected to high potential, and grounding pin 313 is then connected to low potential.When input voltage is less, diode 301 is operated in normal reverse-biased, and the electric current flowing through it is minimum, and diode 301 can not generate heat substantially.When input voltage increases and causes the voltage at diode 301 two ends to exceed disruptive critical voltage, there is critical puncturing in diode 301, this makes the voltage at diode 301 two ends be clamped at fixed value, and the electric current flowing through diode 301 significantly increases.Significantly increasing of electric current makes the corresponding increase of electric current flowing through thermistor 302 on the one hand, if the electric current flowing through thermistor 302 exceedes operating current, then can cause the action of thermistor 302; On the other hand, the electric current increase flow through makes diode 301 generate heat and persistently overheating, and these heats by conduction to thermistor 302, thus can make thermistor 302 more promptly action until turn off.Like this, the output voltage of output pin 312 and output current can be limited in certain scope, thus realizing circuit protection.
Fig. 4 shows the manufacture method of the circuit brake according to the embodiment of the present invention, comprises the steps: to perform step S402, the substrate of thermistor connects diode to make described thermistor and described diode with heat conduction and to be connected conductively; Perform step S404, fill encapsulating material on the substrate to encapsulate described diode; Perform step S406, in described encapsulating material, form multiple conductive through hole draw described thermistor and described diode with electricity; Perform step S408, described encapsulating material installs lead frame.
Fig. 5 a to Fig. 5 d shows the schematic cross-section of circuit brake in the circuit brake Making programme according to the embodiment of the present invention.Next, composition graphs 4 and Fig. 5 a to Fig. 5 d are further described this manufacture method.
As shown in Figure 5 a, provide the substrate 501 of thermistor, the substrate 501 of this thermistor can comprise one or more thermistor, and it is such as non-scribing is the substrate of discrete device.This substrate 501 comprises heat-sensitive material layer 502 and lays respectively at the conductive layer 503 and 504 of these heat-sensitive material layer 502 both sides.Wherein, conductive layer 503 is for the formation of the third electrode of thermistor, and conductive layer 504 is for the formation of the 4th electrode of thermistor.The thermistor of the present embodiment is the thermistor with ptc characteristics, and heat-sensitive material layer 502 can comprise polymer thermo-sensitive material, or based on the ceramic thermo-sensitive material of such as barium titanate.
Then, the conductive layer 503 of substrate 501 side connects diode 505, this diode 505 is such as Zener diode.In the particular embodiment, diode 505 is the semiconductor chip do not encapsulated.Be appreciated that in other examples, diode 505 can also adopt the semiconductor chip encapsulated, and two electrode is mutually back to distribution.Particularly, diode 505 has the first electrode 506 and the second electrode 507, and it lays respectively at the two ends of diode 505.Placed in opposite directions with conductive layer 503 by this second electrode 507, and the second electrode 507 is connected with the third electrode of thermistor, and the first electrode 506 of diode 505 is exposed, the third electrode of thermistor also exposes at least in part simultaneously.Like this, namely to make between thermistor with diode 505 with heat conduction and be connected conductively.
It should be noted that, in order to avoid described connection is on the impact of thermistor performance, preferably, can adopt the Joining Technology that treatment temperature is lower, such as treatment temperature is lower than the Joining Technology of 200 degrees Celsius.In actual applications, in order to improve the heat conduction efficiency of the second electrode 507 and third electrode and ensure to be electrically connected, the mode that brazing metal can be adopted to weld connects, or adopts conducting resinl to connect.Especially, the connected mode of employing brazing metal can reduce the thermal resistance between thermistor and diode 505, and can reduce the spacing of both, thus can realize the heat transfer of greater efficiency.Be appreciated that the substrate 501 for non-scribing, can connect multiple diode 505 by diverse location thereon, this can realize batch making, thus improves production efficiency and reduce cost of manufacture.
As shown in Figure 5 b, described substrate 501 is filled encapsulating material 508 to encapsulate diode 505, to cover each side of diode 505, and cover the exposed portion of thermistor third electrode.In order to encapsulate diode 505 preferably, the encapsulating material 508 filled can exceed the surface of diode 505 first electrode 506 side, and the encapsulating material 508 exceeding first this side surface of electrode 506 can be removed by etching or milled processed in subsequent treatment.
In one embodiment, this encapsulating material 508 can adopt the thermosets of such as epoxy resin.Correspondingly, the step of filling encapsulating material 508 comprises further: on substrate 501, apply encapsulating material 508; Heat-treat to solidify this encapsulating material 501 to encapsulating material 508.Preferably, heat treated treatment temperature wherein can lower than 150 degrees Celsius.Be appreciated that in this heat treatment process, substrate 501 and diode 505 also can by corresponding heating, but because treatment temperature is lower, therefore, the heat-sensitive material layer in substrate 501 can not be destroyed, and thus can not affect the performance of thermistor to the heat treatment of thermosets.
Afterwards, as shown in Figure 5 c, in encapsulating material 508, form multiple conductive through hole 509 with the conductive layer 503 and 504 in connection substrate 501 respectively, thus by the third electrode of thermistor and the 4th electrode respectively electricity draw.Be appreciated that therefore the second electrode 507 is also correspondingly drawn by electricity because third electrode is connected conductively with the second electrode 507 of diode 505.Particularly, first can etch pit in encapsulating material 508 and substrate 501, and the mode of electro-coppering or other metal materials forms conductive through hole 509 in this pit.
In one embodiment, for being drawn by conductive layer 504 electricity of substrate 501 away from diode 505 side, partially conductive through hole 509 is had can be connected on conductive layer 504 through the heat-sensitive material layer 502 of substrate 501.In actual applications, because thermistor has the chip area larger relative to diode 505 usually, therefore, the conductive layer 503 or 504 that the conductive through hole 509 passing vertically through encapsulating material 508 is easy to walk around diode 505 and is connected to substrate 501.Which accordingly reduces the technology difficulty of drawing thermistor electrode.
Next, as fig 5d, encapsulating material 508 is installed lead frame 510, wherein lead frame 510 has multiple with conductive through hole 509 and pin (or pad) corresponding to the first electrode 506 of diode 505.Particularly, when installing lead frame 510, the mode that brazing metal can be adopted to weld realizes the connection of conductive through hole 509 and the first electrode 506 and lead frame 510.Alternatively, also can at the surface chemical metal plating material of the first electrode 506, encapsulating material 508 and conductive through hole 509, and this metal material of selective etch is to form this lead frame 510.In one embodiment, circuit brake adopts surface mounting technology, and therefore, the multiple pins in this lead frame 510 are located substantially on conplane diverse location.Finally, can apply solder mask (not shown) on encapsulating material 508, lead frame 510 and/or conductive through hole 509, this solder mask for the protection of the surface of circuit brake, and only exposes each pin of lead frame 510.When circuit brake is installed on (being such as welded to) circuit board, the short circuit that this solder mask can be prevented the non-pinned region due to circuit brake to be connected (such as being connected by scolding tin) with circuit board and cause.
Although illustrate in detail in accompanying drawing and aforesaid description and describe the present invention, it is illustrative and exemplary for should thinking that this is illustrated and describes, instead of restrictive; The invention is not restricted to above-mentioned execution mode.
The those skilled in the art of those the art can pass through research specification, disclosed content and accompanying drawing and appending claims, understand and implement other changes to the execution mode disclosed.In the claims, word " comprises " element and step of not getting rid of other, and wording " one " does not get rid of plural number.In the practical application of invention, the function of the multiple technical characteristics quoted during a part possibility enforcement of rights requires.Any Reference numeral in claim should not be construed as the restriction to scope.
Claims (15)
1. a circuit brake, is characterized in that, comprising:
A diode, has the first electrode and the second electrode back to described first electrode;
A thermistor with ptc characteristics, be positioned at described diode second electrode side, described thermistor has third electrode and the 4th electrode, and wherein said third electrode and described second electrode are with heat conduction and be connected conductively;
A lead frame, be positioned at described diode first electrode side, described lead frame has multiple pin, for drawing electric respectively to described first electrode, described second electrode, described third electrode and described 4th electrode; And
Packaging part, between described thermistor and described lead frame, it is for encapsulating described diode.
2. circuit brake according to claim 1, is characterized in that, described packaging part comprises thermosets.
3. circuit brake according to claim 2, is characterized in that, described thermosets comprises epoxy resin.
4. circuit brake according to claim 2, is characterized in that, described packaging part adopts fill process to be formed.
5. circuit brake according to claim 1; it is characterized in that; also comprise the multiple conductive through holes through described packaging part, described multiple conductive through hole is used for described third electrode to be connected conductively with the pin in described lead frame respectively with described 4th electrode.
6. circuit brake according to claim 1, is characterized in that, described second electrode is connected by solder or conducting resinl with described third electrode.
7. circuit brake according to claim 1, is characterized in that, described thermistor comprises polymer thermo-sensitive material or ceramic thermo-sensitive material.
8. circuit brake according to claim 7, is characterized in that, the shape of described thermistor is tabular, and described third electrode and described 4th electrode lay respectively at the surface of described thermistor both sides.
9. circuit brake according to claim 1, is characterized in that, described diode comprises Zener diode.
10. a manufacture method for circuit brake, is characterized in that, comprises the steps:
The substrate of thermistor connects diode to make described thermistor and described diode with heat conduction and to be connected conductively;
Fill encapsulating material on the substrate to encapsulate described diode;
In described encapsulating material, form multiple conductive through hole draw described thermistor and described diode with electricity;
Described encapsulating material installs lead frame.
11. manufacture methods according to claim 10, it is characterized in that, described diode comprises the first electrode and the second electrode back to described first electrode, described thermistor has the third electrode and the 4th electrode that lay respectively at described substrate both side surface, and the wherein said diode that connects on the substrate of thermistor is to make described thermistor and described diode with heat conduction and the step be connected conductively comprises the steps: further
By described second electrode and described third electrode with heat conduction and be connected conductively, and described third electrode is partly exposed.
12. manufacture methods according to claim 11, is characterized in that, wherein by described second electrode and described third electrode with heat conduction and the step be connected conductively comprise the steps:
Solder or conducting resinl is adopted to connect described third electrode and described second electrode.
13. manufacture methods according to claim 10, is characterized in that, described encapsulating material comprises thermosets.
14. manufacture methods according to claim 13, is characterized in that, described encapsulating material comprises epoxy resin.
15. manufacture methods according to claim 13 or 14, is characterized in that, wherein fill encapsulating material on the substrate and comprise the steps: with the step encapsulating described diode
Apply encapsulating material on the substrate; And
Heat-treat to solidify described encapsulating material to described encapsulating material.
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| CN201110227685.XA CN102931646B (en) | 2011-08-09 | 2011-08-09 | Circuit brake and preparation method thereof |
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| CN201110227685.XA CN102931646B (en) | 2011-08-09 | 2011-08-09 | Circuit brake and preparation method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201038747Y (en) * | 2007-01-30 | 2008-03-19 | 佳邦科技股份有限公司 | Multifunctional and integral electronic circuit protection assembly |
| CN102064541A (en) * | 1999-10-22 | 2011-05-18 | 泰科电子有限公司 | Device and method for protection of chargeable element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060055501A1 (en) * | 2002-12-10 | 2006-03-16 | Bourns., Inc | Conductive polymer device and method of manufacturing same |
| KR20060103864A (en) * | 2005-03-28 | 2006-10-04 | 타이코 일렉트로닉스 코포레이션 | Surface mount multi-layer electrical circuit protection device with active element between pptc layers |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064541A (en) * | 1999-10-22 | 2011-05-18 | 泰科电子有限公司 | Device and method for protection of chargeable element |
| CN201038747Y (en) * | 2007-01-30 | 2008-03-19 | 佳邦科技股份有限公司 | Multifunctional and integral electronic circuit protection assembly |
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