CN102931182B - The packaging system of the single-phase integrated drive electronics of compact and single-phase integrated drive electronics - Google Patents

The packaging system of the single-phase integrated drive electronics of compact and single-phase integrated drive electronics Download PDF

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CN102931182B
CN102931182B CN201210452316.5A CN201210452316A CN102931182B CN 102931182 B CN102931182 B CN 102931182B CN 201210452316 A CN201210452316 A CN 201210452316A CN 102931182 B CN102931182 B CN 102931182B
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pin
upper arm
bias voltage
centre
grid
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CN102931182A (en
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吴美飞
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Hangzhou Silan Microelectronics Co Ltd
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Hangzhou Silan Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

The invention provides the packaging system of the single-phase integrated drive electronics of a kind of compact, packaging system comprises lead frame; Form multiple first chip Ji Dao on the lead frames; Be arranged on each first chip Ji Dao respectively and carry out the first grid driver, second grid driver, the first upper arm transistor, the first underarm transistor, the second upper arm transistor and the second underarm transistor that are electrically connected; The signal pins being formed in the relative both sides of lead frame of being drawn by each first chip Ji Dao and power pin.The present invention also provides a kind of single-phase integrated drive electronics, the installation difficulty that device count in order to solve the drive circuit be connected to form by discrete component is various and cause and the problem of poor reliability, be particularly useful for solving in integrated drive electronics, the pin centre-to-centre spacing caused because encapsulation volume is limited reduces, thus produces the problem of damage mutually because centre-to-centre spacing is not enough between the pin caused.

Description

The packaging system of the single-phase integrated drive electronics of compact and single-phase integrated drive electronics
Technical field
The invention belongs to integrated semiconductor technology field, particularly relate to the packaging system of the single-phase integrated drive electronics of a kind of compact and single-phase integrated drive electronics.
Background technology
Compared to alternating current machine, brshless DC motor effectively can promote operating efficiency, and by the adjustment of control program, can arrange the parameter of electric motor starting and closedown neatly, more meets the user demand of user, day by day becomes the first-selection of family expenses and industry control motor.
Three-phase brushless dc motor in brshless DC motor and single-phase brushless direct-current motor etc. are multiple.Due to the integrated drive electronics that three-phase brushless dc motor is current, its volume is larger, be difficult to install to many motors (such as motor external diameter 80mm, diameter of axle 34mm and following motor) on inner ring-shaped P CB (printed circuit board), and the spacing of the high pressure pin of this integrated drive electronics and low pressure pin is comparatively near, easily produce the problem producing damage mutually between pin because centre-to-centre spacing is not enough.Single-phase brushless direct-current motor is the one of brshless DC motor, because its method for winding is simple, less demanding to the magnetic material of motor, and in a lot of power application, the effect of three-phase brushless dc motor can be reached equally, so become a kind of motor with high cost performance.Single-phase brushless direct-current motor may be used for the application of various energy-saving fan, water pump.
Single-phase brushless direct-current motor is made up of motor and drive circuit, drive circuit is made up of analog line driver and controller, the control signal that program sends by drive circuit is through controller process, with the conducting of driving power driver or closedown, and then control starting or stoping of motor, and the running of various pattern.At present, the type of drive of general single-phase brushless direct-current motor has following several mode:
Mode one: as shown in Figure 1, the high voltage gate drivers S1 of totem (Totem Pole) form be barricaded as with discrete devices such as bipolar junction transistor (as NPN and PNP), diode, resistance and electric capacity goes to drive the analog line driver G1 be made up of power device (as MOSFET manages), but the high voltage gate drivers of this kind of circuit structure needs nearly tens discrete devices, design is complicated, production difficulty is high, poor reliability, repair rate is high, and shared by it, volume is large, is difficult to be integrated into motor internal.
Mode two: as shown in Figure 2, the basis of Fig. 1 is improved, integrated technique is adopted to manufacture high voltage gate drivers (HVIC) S1 ', by the high voltage gate drivers S1 of totem form adopting two gate drivers S2 to substitute to be barricaded as by discrete device, go to drive by four power devices (as MOSFET manages) the analog line driver G1 ' with single-phase upper brachium pontis and single-phase lower brachium pontis that forms.Although; the all right integrated under-voltage abnormal protection such as grade of described high voltage gate drivers S1 '; therefore, the integrated level of described high voltage gate drivers S1 ' is relatively high, and the high voltage gate drivers S1 with totem form that reliability also forms than bipolar junction transistor has larger enhancing.But, described high voltage gate drivers S1 ' and analog line driver G1 ' also or discrete device, there is more problem equally, such as prior art is difficult to be integrated on single-chip by integrated technology process by high voltage gate drivers and analog line driver, and the existing Duo Ji island that can not arrange on the lead frame of packaging, what generally arrange is single-chip; Such as there is the inferior positions such as the complicated volume of design on control circuit is large, poor insulativity, parasitic capacitance inductance are larger, be difficult to be applicable to require that compactedness is installed, the occasion of the unified heat radiation of end cap, and owing to being difficult to the parameter consistency of guarantee four power devices, system reliability is also poor.Further, the line between described high voltage gate drivers S1 ' and analog line driver G1 ' is long, and wiring inductance and connection resistances are comparatively large, so need to increase the grid filter capacitor Cgate preventing Miller effect.
Fig. 3 is that two power devices that a described gate drivers S2 in Fig. 2 is corresponding are described.General Normal practice is the identical gate drivers S2 of employing two, and each described gate drivers S2 carrys out the driving resistance R on regulating power device grids, and then comes rising and the trailing edge time of Modulating Power device output signal.Therefore, the existence of four described driving resistance R, certainly will need to occupy the more space of integrated circuit, makes to output signal larger ring and if described driving resistance arranges too small meeting, and EMI (electromagnetic interference) is also larger simultaneously; If described driving resistance arranges excessive, not only power device switching time is slow, also may produce single-phase upper brachium pontis and single-phase lower brachium pontis to logical, cause irrecoverability to damage, so the leeway that can adjust for client is less.
As can be seen here, control circuit in traditional single-phase brushless direct-current motor drive circuit and power driving circuit are still discrete part, position dispersion on PCB, being difficult to unification is attached on fin, and be enable subsides fin, fin area is also larger, and cost is higher, and higher insulating properties cannot be had while guarantee volume is little, be also just difficult to use stably in a long term.
Simultaneously, some vibrate very serious motor is applied time, fin and each module formed in drive circuit are easily thrown off, temperature of power module may be caused sharply to rise, or in other motor application, need the temperature according to power model, when dynamically adjusting the input and output power of motor, need the output pin that temperature sensor is set in power model, export the analog voltage corresponding with temperature to control circuit, control PWM duty ratio in real time.In addition also in some other motor application, need according to fault on one's own initiative output alarm signal to control circuit, or increase overcurrent protection signal on one's own initiative to control circuit according to the size of electric current.The increase of these discrete devices also increases integrated difficulty undoubtedly, and cost also increases thereupon.
Along with the discrete component for single-phase brushless direct-current motor gets more and more, volume constantly increases, number of pins increases, pin centre-to-centre spacing is but in minimizing, power model size is little, installation volume is little how to ensure the driving integration module of monophase machine to be applicable to, also to ensure there is enough centre-to-centre spacing between high-low pressure pin and between high pressure pin simultaneously, go to ensure that the occasion that withstand voltage requirement compact is installed is a problem demanding prompt solution.
Summary of the invention
The object of the present invention is to provide the packaging system of the single-phase integrated drive electronics of a kind of compact and single-phase integrated drive electronics, the installation difficulty that device count in order to solve the drive circuit be connected to form by discrete component is various and cause and the problem of poor reliability, be particularly useful for solving in integrated drive electronics, the pin centre-to-centre spacing caused because encapsulation volume is limited reduces, thus produces the problem of damage mutually because centre-to-centre spacing is not enough between the pin caused.
For solving the problem, the invention provides the packaging system of the single-phase integrated drive electronics of a kind of compact, comprising:
Lead frame;
Form the multiple first chip Ji Dao on described lead frame;
The signal pins being respectively formed at the relative both sides of described lead frame and the power pin of extraction is bent by described multiple first chip Ji Dao;
Be arranged on first grid driver, second grid driver, the first upper arm transistor, the first underarm transistor, the second upper arm transistor and the second underarm transistor on each described first chip Ji Dao respectively, wherein, described first grid driver, second grid driver, the first upper arm transistor, the first underarm transistor, the second upper arm transistor and the second underarm transistor are respectively by electrical connection; And
Packaging body, the length of described packaging body is 17.8mm-25.8mm, and width is 11mm-13mm; Wherein,
The signal pins that described first grid driver is corresponding comprises the first upper arm bias voltage pin, first grid driving bias voltage pin, the first upper arm input signal pin, the first underarm input signal pin and is total to place voltage pin, and the signal pins that described second grid driver is corresponding comprises the second upper arm bias voltage pin, second grid drives bias voltage pin, the second upper arm input signal pin, the second underarm input signal pin and described common place voltage pin;
The power pin that described first upper arm transistor is corresponding comprises upper arm positive voltage pin and the first drive output signal pin, the power pin that described first underarm transistor is corresponding comprises the first described drive output signal pin and the first detection signal pin, the power pin that described second upper arm transistor is corresponding comprises described upper arm positive voltage pin and the second detection signal pin, and the power pin that described second underarm transistor is corresponding comprises the second described detection signal pin and the second drive output signal pin;
Centre-to-centre spacing between described first grid driving bias voltage pin and the first upper arm bias voltage pin, the centre-to-centre spacing between described second grid driving bias voltage pin and the second upper arm bias voltage pin, the centre-to-centre spacing between described first underarm input signal pin and the second upper arm bias voltage pin are more than the twice of low pressure pin centre-to-centre spacing.
Preferably, the centre-to-centre spacing between described upper arm positive voltage pin and the first drive output signal pin, the centre-to-centre spacing between described first drive output signal pin and the first detection signal pin, the centre-to-centre spacing between described second drive output signal pin and the second detection signal pin are more than the twice of low pressure pin centre-to-centre spacing.
Further, described first grid drives between bias voltage pin and the first upper arm bias voltage pin has the first function pin, and described second grid drives between bias voltage pin and the second upper arm bias voltage pin has the second function pin.
Further, load temperature sensor or load fault signal generator at described first function pin and the second function pin or load over-current signal comparator.
Preferably, described packaging system also comprises the first bootstrap diode pressure welding point formed on described first grid driver and the second bootstrap diode pressure welding point formed on described second grid driver; Form the first bootstrap diode chip Ji Dao on described lead frame and the second bootstrap diode chip Ji Dao; To be arranged on described first bootstrap diode chip Ji Dao and with described first function pin and described first bootstrap diode pressure welding point the first bootstrap diode chip by being electrically connected; To be arranged on described second bootstrap diode chip Ji Dao and with described second function pin and described second bootstrap diode pressure welding point the second bootstrap diode chip by being electrically connected.
Preferably, described packaging system also comprises the multiple second chip Ji Dao formed on described lead frame; Be arranged on the switch element on each described second chip Ji Dao respectively, each described switch element includes a upper arm switch element and once arm switch unit.
According to another side of the present invention, the invention provides a kind of single-phase integrated drive electronics, comprising:
Be integrated in high voltage gate drivers, analog line driver, signal pins and the power pin on same packaging body, wherein, described high voltage gate drivers is made up of first grid driver and second grid driver, and described analog line driver is made up of the first upper arm transistor, the first underarm transistor, the second upper arm transistor and the second underarm transistor;
Described high voltage gate drivers receives the drive singal of input signal generation by described signal pins, and described analog line driver responds described drive singal and exports the drive output signal for control load work by described power pin; Wherein,
The signal pins that described first grid driver is corresponding is the first upper arm bias voltage pin, first grid driving bias voltage pin, the first upper arm input signal pin, the first underarm input signal pin and common place voltage pin, and the signal pins that described second grid driver is corresponding is that second grid drives bias voltage pin, the second upper arm bias voltage pin, the second upper arm input signal pin, the second underarm input signal pin and described common place voltage pin;
The power pin that described first upper arm transistor is corresponding is upper arm positive voltage pin and the first drive output signal pin, the power pin that described first underarm transistor is corresponding is the first described drive output signal pin and the first detection signal pin, the power pin that described second upper arm transistor is corresponding is described upper arm positive voltage pin and the second detection signal pin, and the power pin that described second underarm transistor is corresponding is the second described detection signal pin and the second drive output signal pin;
Centre-to-centre spacing between described first grid driving bias voltage pin and the first upper arm bias voltage pin, the centre-to-centre spacing between described second grid driving bias voltage pin and the second upper arm bias voltage pin, the centre-to-centre spacing between described first underarm input signal pin and the second upper arm bias voltage pin are the twice of low pressure pin centre-to-centre spacing.
Preferably, the centre-to-centre spacing between described upper arm positive voltage pin and the first drive output signal pin, the centre-to-centre spacing between described first drive output signal pin and the first detection signal pin, the centre-to-centre spacing between described second drive output signal pin and the second detection signal pin are more than the twice of low pressure pin centre-to-centre spacing.
Further, described first grid drives between bias voltage pin and the first upper arm bias voltage pin and has the first function pin; Described second grid drives between bias voltage pin and the second upper arm bias voltage pin has the second function pin.
Further, load temperature sensor or load fault signal generator at described first function pin and the second function pin or load over-current signal comparator.
Preferably, described single-phase integrated drive electronics also comprises described first grid driver and has the first bootstrap diode pressure welding point, described first bootstrap diode pressure welding point is electrically connected with the first function pin, and described first function pin and the first upper arm bias voltage pin are connected with the anode of the first bootstrap diode and cathodic electricity respectively;
Described second grid driver has the second bootstrap diode pressure welding point, described second bootstrap diode pressure welding point is electrically connected with the second function pin, and described second function pin and the second upper arm bias voltage pin are connected with the anode of the second bootstrap diode and cathodic electricity respectively.
Further, integrated multiple switch elements for power drive, each described switch element includes a upper arm switch element and once arm switch unit.
As seen from the above technical solution, on same packaging body, gate drivers and analog line driver is integrated with in the present invention, the input signal that gate drivers receives according to signal pins produces drive singal, drive singal described in driving power actuator response, produces the drive output signal driving loaded work piece in power pin.Compared with prior art, the present invention realizes the integrated of gate drivers and analog line driver by packaging technology, solves in existing lead frame and only has single Ji Dao, and cannot place two gate drivers of the present invention and four analog line drivers.Therefore, the discrete component originally forming gate drivers and analog line driver is no longer disperseed, but effective integration is to together, not only volume reduces, and the simplicity of design of gate drivers control analog line driver, improve system reliability.
Because gate drivers and analog line driver are integrated on same packaging body, therefore, discrete component can be reduced by the configuration of package interior and connect the device count caused various and the installation difficulty that causes and the problem of poor reliability, and reduce holistic cost.
And, because gate drivers and analog line driver are integrated on same packaging body, can by the configuration of adjustment package interior and the arrangement of outside pin, solve the pin centre-to-centre spacing caused because encapsulation volume is limited in integrated drive electronics to reduce, thus produce the problem of damage mutually because centre-to-centre spacing is not enough between the pin caused.
In addition, because gate drivers and analog line driver are integrated on same packaging body, therefore, can easily in same packaging body, different efficient layouts is carried out to the mutual circuit between gate drivers and analog line driver, so that when the total quantity of signal pins and power pin is constant, not only signal pins reasonably can be utilized to receive input signal according to the difference of application needs, to produce drive output signal in power pin driving loaded work piece, thus not only may be used for single-phase electrode driving, xenon lamp (High intensity Discharge can also be used for, HID) drive, and can temperature sensor or load fault signal generator be loaded at the function pin place that signal pins is arranged according to the difference of application needs or load over-current signal comparator, effectively to detect single-phase integrated drive electronics, reduce rate of breakdown and maintenance problem.
In addition, because gate drivers and analog line driver are integrated on same packaging body, therefore, the line of IC interior is very short, wiring inductance and connection resistances minimum, so the grid filter capacitor Cgate originally placed for preventing Miller effect can omit.In addition, the raster data model resistance controlling analog line driver turn-on and turn-off in prior art is also integrated in same packaging body easily, can make integrated drive electronics on the basis keeping less EMI, also can have less switching loss.
Accompanying drawing explanation
Fig. 1 is the motor-drive circuit schematic diagram of the totem form be barricaded as by discrete device of prior art embodiment one;
Fig. 2 be prior art embodiment two by high voltage gate drivers and the discrete motor-drive circuit schematic diagram formed of power driving circuit;
Fig. 3 is the motor-drive circuit schematic diagram with raster data model resistance discrete device of prior art embodiment three; The packaging system of the single-phase integrated drive electronics of compact and single-phase integrated drive electronics
Fig. 4 is the packaging system schematic diagram of the single-phase integrated drive electronics of compact of the embodiment of the present invention one;
Fig. 5 is the pressure point schematic diagram that in Fig. 4, first grid driver is provided with;
Fig. 6 is the pressure point schematic diagram that in Fig. 4, second grid driver is provided with;
Fig. 7 is the single-phase integrated drive electronics schematic diagram of the embodiment of the present invention one;
Fig. 8 is the single-phase integrated drive electronics application schematic diagram of the embodiment of the present invention one;
Fig. 9 is the packaging system schematic diagram of the single-phase integrated drive electronics of compact of the embodiment of the present invention two;
Figure 10 is the pressure point schematic diagram that in Figure 13, first grid driver is provided with;
Figure 11 is the pressure point schematic diagram that in Figure 13, second grid driver is provided with;
Figure 12 is the single-phase integrated drive electronics schematic diagram of the embodiment of the present invention two;
Figure 13 is the single-phase integrated drive electronics application schematic diagram of the embodiment of the present invention two;
Figure 14 is the single-phase integrated drive electronics schematic diagram of the embodiment of the present invention three;
Figure 15 is the end view of the outer pin of the packaging system of the single-phase integrated drive electronics of compact of the embodiment of the present invention;
Figure 16 is the vertical view of the outer pin of the packaging system of the single-phase integrated drive electronics of compact of the embodiment of the present invention.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
[embodiment one]
The present invention proposes the packaging system of the single-phase integrated drive electronics of a kind of compact, and as shown in Figure 4, the packaging system 100 of the single-phase integrated drive electronics of described compact comprises lead frame 102, is formed in the multiple first chip Ji Dao on described lead frame.Described multiple first chip Ji Dao comprises first grid driving chip base island 104, upper arm chip base island, underarm chip base island 110, second, upper arm chip base island 108, first, second grid driving chip base island 106, first 112 and the second underarm chip base island 114.Wherein, described first grid driving chip base island 104 and second grid driving chip base island 106 be formed in described lead frame one inside, described first upper arm chip base island 108 and the first underarm chip base island 110, second upper arm chip base island 112 and the second underarm chip base island 114 are formed in inside relative another of described lead frame, and described first upper arm chip base island 108 and the first underarm chip base island 110 are near described first grid driving chip Ji Dao, described second upper arm chip base island 112 and the second underarm chip base island 114 are near described second grid driving chip Ji Dao.
The packaging system 100 of the single-phase integrated drive electronics of described compact also comprises first grid driver 60, second grid driver 50, first upper arm transistor 40, first underarm transistor 30, second upper arm transistor 20 and the second underarm transistor 10.Described first upper arm transistor 40, first underarm transistor 30, second upper arm transistor 20 and the second underarm transistor 10 are mosfet transistor.Wherein, described first grid driver 60 is formed on described first grid driving chip Ji Dao, described second grid driver 50 is formed on described second grid driving chip Ji Dao, described first upper arm transistor 40 is formed on described first upper arm chip Ji Dao, described first underarm transistor 30 is formed on described first underarm chip Ji Dao, and described second upper arm transistor 20 is formed on described second upper arm chip Ji Dao and described second underarm transistor 10 is formed on described second underarm chip Ji Dao.
The packaging system 100 of the single-phase integrated drive electronics of described compact also comprises signal pins.Each described signal pins bends rear extraction by corresponding Ji Dao.Described signal pins is formed in a side of described lead frame 102.Therefore, the signal pins that described first grid driver is corresponding comprises the first upper arm bias voltage pin (1), first grid drives bias voltage pin (3), first upper arm input signal pin (4), first underarm input signal pin (5) and altogether place voltage pin (11), the signal pins that described second grid driver is corresponding comprises the second upper arm bias voltage pin (6), second grid drives bias voltage pin (8), second upper arm input signal pin (9), second underarm input signal pin (10) and described common place voltage pin (11).So, described signal pins (1), (3), (4), (5), (6), (8), (9), (10) and (11) receive corresponding first upper arm bias voltage VB1 respectively, first grid drives bias voltage VCC1, the first upper arm input signal INH1, the first underarm input signal INL1, the second upper arm bias voltage VB2, second grid drive bias voltage VCC2, the second upper arm input signal INH2, the second underarm input signal INL2 and point voltage COM altogether, see Figure 15 and Figure 16.Wherein, described first grid drives bias voltage pin (3), the first upper arm input signal pin (4), the first underarm input signal pin (5), second grid to drive bias voltage pin (8), the second upper arm input signal pin (9), the second underarm input signal pin (10) and be total to place voltage pin (11) and is low pressure pin, then the centre-to-centre spacing between described low pressure pin is low pressure pin-pitch.
The packaging system 100 of the single-phase integrated drive electronics of described compact also comprises power pin.Each described power pin also bends rear extraction by corresponding Ji Dao.Described power pin is formed in another side of described lead frame, and another side of described lead frame is relative with a side of described lead frame.Therefore, the power pin that described first upper arm transistor is corresponding comprises upper arm positive voltage pin (12) and the first drive output signal pin (13), the power pin that described first underarm transistor is corresponding comprises described first drive output signal pin (13) and the first detection signal pin (14), the power pin that described second upper arm transistor is corresponding comprises described upper arm positive voltage pin (12) and the second detection signal pin (15), the power pin that described second underarm transistor is corresponding comprises described second detection signal pin (15) and the second drive output signal pin (16).So, described power pin (12) receives the positive phase voltage VP of upper arm, described power pin (13), (14), (15) and (16) export corresponding first drive output signal OUT1, the first detection signal N1, the second detection signal N2 and the second drive output signal OUT2, respectively see Figure 15 and Figure 16.
Composition graphs 5 and Fig. 6, the first public domain point voltage pressure welding point 61 and the second public domain point voltage pressure welding point 51 is respectively equipped with on described first grid driver 60 He on described second grid driver 50, described first public domain point voltage pressure welding point 61 and the second public domain point voltage pressure welding point 51 are connected on described first grid driving chip base island 104 and second grid driving chip base island 106 by electric connection mode respectively, and the described first grid driving chip base island 104 be integrated on same lead frame 102 and second grid driving chip base island 106 can be connected to public domain point voltage pin (11) by electric connection mode, and described first grid driver 60 and second grid driver 50 are connected to form high voltage gate drivers, therefore, described first grid driver 60 and second grid driver 50 accept point voltage COM altogether by described public domain point voltage pin (11) simultaneously.Due in prior art, two gate drivers forming high voltage gate drivers are discrete device, in order to drive two discrete described gate drivers respectively, each discrete described gate drivers must accept corresponding raster data model bias voltage, upper arm input signal, underarm input signal, upper arm bias voltage and altogether point voltage, even if each described gate drivers can share a point voltage altogether, each discrete described gate drivers also must arrange common place voltage pin, and in the outside of each discrete described gate drivers, the same point voltage altogether of the common reception of configuration ability is carried out to corresponding place voltage pin altogether.And the present invention can omit a place voltage pin altogether, therefore adopt minimum pin, realize the function of described high voltage gate drivers, and reduce the size of integrated circuit as much as possible.In addition, described first grid driver 60 also has the first grid receiving first grid driving bias voltage VCC1 respectively and drives bias voltage pressure welding point 66, receive the first upper arm input signal pressure welding point 67 of the first upper arm input signal INH1 and receive the first underarm input signal pressure welding point 68 of the first underarm input signal INL1, described second grid driver 50 also has the second grid receiving second grid driving bias voltage VCC2 respectively and drives bias voltage pressure welding point 56, receive the second upper arm input signal pressure welding point 57 of the second upper arm input signal INHL2 and receive the second underarm input signal pressure welding point 58 of the second underarm input signal IHL2.
Due in prior art, four power devices forming described analog line driver are discrete device, two power devices are wherein had to form single-phase upper brachium pontis, in order to drive described single-phase upper brachium pontis, the each power device forming described single-phase upper brachium pontis must accept the positive phase voltage of corresponding upper arm, even if each power device forming described single-phase upper brachium pontis can share a positive phase voltage of upper arm, the each power device forming described single-phase upper brachium pontis also must arrange upper arm positive voltage pin, and form described single-phase on the outside of each power device of brachium pontis configuration is carried out to corresponding upper arm positive voltage pin common could receive the positive phase voltage of same upper arm.And the present invention is because the drain D 11 of described first upper arm transistor 40 and the drain D 21 of the second upper arm transistor 20 are by being electrically connected and being connected to upper arm positive voltage pin (12), then, analog line driver is formed by the electrical connection of the source S 21 of the drain D 12 of described first underarm transistor 30 and the electrical connection of the source S 11 of the first upper arm transistor 40 and the drain D 22 of described second underarm transistor 10 and the second upper arm transistor 20, and the described first upper arm chip base island 108 be integrated on same lead frame 102, first underarm chip base island 110, second upper arm chip base island 112 and the second underarm chip base island 114 are integrated by the electrical connection being arranged on the transistor separately, therefore, described first upper arm transistor 40 and the second upper arm transistor 20 accept the positive phase voltage VP of upper arm by described upper arm positive voltage pin (12) simultaneously.As can be seen here, the present invention can also omit a upper arm positive voltage pin, therefore adopts minimum pin, realizes the function of analog line driver, and reduce the size of integrated circuit as much as possible.
Composition graphs 5 and Fig. 6 again, described first grid driver can also have the first upper arm bias voltage pressure welding point 65, first upper arm drive singal pressure welding point 64, first upper arm bias voltage ground pressure welding point 63 and the first underarm drive singal pressure welding point 62, described first upper arm drive singal pressure welding point 64, first upper arm bias voltage ground pressure welding point 63 and the first underarm drive singal pressure welding point 62 respectively with the grid G 11 of described first upper arm transistor, drain D 12 and the grid G 12 of the first underarm transistor are electrically connected, described second grid driver can also have the second upper arm bias voltage pressure welding point 55, second upper arm drive singal pressure welding point 54, second upper arm bias voltage ground pressure welding point 53 and the second underarm drive singal pressure welding point 52, described second upper arm drive singal pressure welding point 54, second upper arm bias voltage ground pressure welding point 53 and the second underarm drive singal pressure welding point 52 respectively with the grid G 21 of described second upper arm transistor, drain D 22 and the grid G 22 of the second underarm transistor are electrically connected, and then form single-phase integrated drive electronics.And the described first grid driving chip base island 104 be integrated on same lead frame 102 and second grid driving chip base island 106 integrate formation same chip by being arranged on driver separately and described first upper arm chip base island, underarm chip base island 110, second, upper arm chip base island 108, first 112 and the second underarm chip base island 114 by the electrical connection be arranged between the transistor separately.Wherein, described first upper arm bias voltage pressure welding point 65, first upper arm drive singal pressure welding point 64, first upper arm bias voltage ground pressure welding point 63 and the first underarm drive singal pressure welding point 62 receive the first upper arm bias voltage VB1, the first upper arm drive singal HO1, the first upper arm bias voltage ground VS1 and the first underarm drive singal LO1 respectively.Described second upper arm bias voltage pressure welding point 55, second upper arm drive singal pressure welding point 54, second upper arm bias voltage ground pressure welding point 53 and the second underarm drive singal pressure welding point 52 receive the second upper arm bias voltage VB2, the second upper arm drive singal HO2, the second upper arm bias voltage ground VS2 and the second underarm drive singal LO2 respectively.
The packaging system 100 of the single-phase integrated drive electronics of described compact also comprises packaging body.Described packaging body is used for single-phase integrated drive electronics, lead frame, signal pins and power pin described in plastic packaging and is respectively electrically connected.The size of described packaging body can adjust according to the difference of described analog line driver size used: when the power reduction of described analog line driver, the size of described packaging body can be length 17.8mm, width 11mm, when the power of described analog line driver improves, the size of described packaging body can be length 25.8mm, width 13mm; The size of same described packaging body can adjust according to the difference of described first grid driver used and second grid driver size: when the power reduction of described first grid driver and second grid driver, the size of described packaging body can be length 17.8mm, width 11mm, when the power of described first grid driver and second grid driver improves, the size of described packaging body can be length 25.8mm, width 13mm.
Because described high voltage gate drivers and analog line driver are integrated on same packaging body, originally the discrete component forming gate drivers and analog line driver is no longer disperseed, but effective integration is to together, than the volume minimizing of the single-phase integrated drive electronics that prior art is formed by discrete device, and described high voltage gate drivers controls the simplicity of design of described analog line driver, improves system reliability.
And, because gate drivers and analog line driver are integrated on same packaging body, discrete component can be reduced by the configuration of package interior and connect the device count caused various and the installation difficulty that causes and the problem of poor reliability, and reduce holistic cost.
Continue see Fig. 4, in the packaging system 100 of the single-phase integrated drive electronics of described compact, the voltage of described first upper arm bias voltage VB1 can up to more than 600V, and described first grid drives the voltage of bias voltage VCC1 to be low to moderate below 20V; The voltage of described second upper arm bias voltage VB2 can up to more than 600V, and described second grid drives the voltage of bias voltage VCC2 to be low to moderate below 20V.
In addition, the voltage of described second upper arm bias voltage VB2 can up to more than 600V, and the voltage of described first underarm input signal INL1 can be low to moderate below 20V.
In order to prevent at wet environment or have in the environment of dust, arcing discharge effect between the high pressure pin that the pad center distance of two pins on pcb board is comparatively near and cause and low pressure pin, thus cause the problem of low pressure pin and circuit malfunction thereof, need the centre-to-centre spacing widening high pressure pin and low pressure pin.Due to described first grid driver 60 and second grid driver 50 be integrated in same chip time, eliminate a place voltage pin altogether, and without packaging pin (see Figure 15 and Figure 16) between described second upper arm bias voltage pin (6) and described first underarm input signal pin (5).Therefore, the packaging system 100 of the single-phase integrated drive electronics of described compact has enough pin centre-to-centre spacing at described signal pins place.
Although described first grid drives between bias voltage pin (3) and the first upper arm bias voltage pin (1) have the first function pin, described second grid drives between bias voltage pin (8) and the second upper arm bias voltage pin (6) has the second function pin, described first function pin and the second function pin respectively by described first grid driving chip base island 104 and second grid driving chip base island 106 by being bent to form the signal pins at lead frame, but be not connected on each chip by metal routing, therefore, when placement-and-routing without the need to designing pad, and at the signal pins place of described lead frame also without the need to designing pin, therefore, described first grid drives between bias voltage pin (3) and the first upper arm bias voltage pin (1), described second grid drives between bias voltage pin (8) and the second upper arm bias voltage pin (6) has enough pin centre-to-centre spacing.
Now, pin centre-to-centre spacing between described first grid driving bias voltage pin (3) and the first upper arm bias voltage pin (1), the pin centre-to-centre spacing between described second grid driving bias voltage pin (8) and the second upper arm bias voltage pin (6), the pin centre-to-centre spacing D1 between described first underarm input signal pin (5) and the second upper arm bias voltage pin (6) are more than the twice of low pressure pin centre-to-centre spacing, described low pressure pin centre-to-centre spacing is 1.778mm, see Figure 15 and Figure 16.
Further, described first upper arm transistor and the second upper arm transistor also pass through electrical connection omission upper arm positive voltage pin in same chip inside.Therefore, the packaging system 100 of the single-phase integrated drive electronics of described compact also has enough pin centre-to-centre spacing at described power pin place.
Now, pin centre-to-centre spacing between described upper arm positive voltage pin (12) and the first drive output signal pin (13), the pin centre-to-centre spacing between described first drive output signal pin (13) and the first detection signal pin (14), the pin centre-to-centre spacing D2 between described second drive output signal pin (16) and the second detection signal pin (15) are more than the twice of low pressure pin centre-to-centre spacing, see Figure 15 and Figure 16.
As can be seen here, high voltage gate drivers of the prior art and analog line driver are discrete device, therefore, for realizing the function of integrated drive electronics and the external circuit carried out connects the number of pins produced increases, therefore, being difficult to realize pin centre-to-centre spacing and widening.And the present invention is integrated on same packaging body due to high voltage gate drivers and analog line driver, therefore, can by the configuration of adjustment package interior and the arrangement of outside pin, solve the pin centre-to-centre spacing caused because encapsulation volume is limited in integrated drive electronics to reduce, thus the problem of damage mutually between the pin caused, is produced because centre-to-centre spacing is not enough, thus reduce cost, enhance reliability.
Continue see Fig. 4, as to as described in the first upper arm bias voltage pin (1), first grid drives bias voltage pin (3), after second upper arm bias voltage pin (6) and first grid drive bias voltage pin (8) to carry out insulation protection, when having practical application request, described first function pin (2) and the second function pin (7) can make pin and receive unlike signal NC1 and NC2 respectively, first function pin (2) and the second function pin (7) are set to output pin output signal NC1 and NC2 of temperature sensor as will be described, then described first function pin and the second function pin load temperature sensor, and coordinate non-essential resistance, the voltage signal of temperature value in exportable instruction packaging body, described voltage signal is by after the process of packaging body peripheral control unit, pass to described first upper arm input signal pin HIN1 or the first underarm input signal pin LIN1 and the second upper arm input signal pin HIN2 or the second underarm input signal pin LIN2 accordingly, control PWM duty ratio in real time, dynamically adjust the input and output power of load.In like manner, described first function pin (2) and the second function pin (7) are set to output pin output signal NC1 and NC2 of detection failure, then described first function pin (2) and the second function pin (7) load fault signal generator go to detect load operating condition, report to the police in order to export fault-signal.Described first function pin (2) and the second function pin (7) also can load over-current signal comparator, to increase overcurrent protection function.
Based on the packaging system of the single-phase integrated drive electronics of compact described in embodiment one, the present invention proposes corresponding single-phase integrated drive electronics, as shown in Figure 7, described single-phase integrated drive electronics comprises:
Be integrated in the high voltage gate drivers 107 on same packaging body, analog line driver 115, signal pins and power pin, wherein, described high voltage gate drivers 107 is made up of first grid driver 104 and second grid driver 106, and described analog line driver 115 is made up of the first upper arm transistor 108, first underarm transistor 110, second upper arm transistor 112, second underarm transistor 114.
Described high voltage gate drivers 107 by described signal pins receive corresponding input signal produce drive singal, described analog line driver 115 respond described drive singal and received by described power pin and exports generation as follows for the course of work of the drive output signal of control load work:
Described first grid driver 104 receives and comes from the first upper arm bias voltage pin (1), first grid starts work after driving bias voltage pin (3) and being total to the input signal in place voltage pin (11), described second grid driver 106 receives and comes from the second upper arm bias voltage pin (6), second grid starts after driving the input signal in bias voltage pin (8) and described place voltage pin (11) altogether starts working, described first upper arm transistor and the second upper arm transistor receive the power signal coming from upper arm positive voltage pin (12).
Situation one: when the first upper arm input signal that described first grid driver 104 reception comes from the first upper arm input signal pin (4) is drive singal INH1, then described second grid driver 106 accepts to come from the second underarm input signal INL2 of the second underarm input signal pin (10) is drive singal, now, output first upper arm drive singal HO1 is given the grid G 11 of described first upper arm transistor by described first grid driver 104, and output second underarm drive singal LO1 is given the grid G 12 of described second underarm transistor by described second grid driver 106.
Therefore, described first upper arm transistor ON, described first underarm transistor turns off, and export the first drive output signal OUT1 at the first drive output signal pin (13) and export the first detection signal N1 at the first detection signal pin (14), and described second upper arm transistor turns off, described second underarm transistor turns, and export the second drive output signal OUT2 at the second drive output signal pin (16) and export the second detection signal N2 at the second detection signal pin (15).
Situation two: when the first underarm input signal INL1 that described first grid driver 104 reception comes from the first underarm input signal pin (5) is drive singal, then described second grid driver 106 accepts to come from the second upper arm input signal INH2 of the second upper arm input signal pin (9) is drive singal, now, output first underarm drive singal LO1 is given the grid G 12 of described first underarm transistor by described first grid driver 104, and output second upper arm drive singal HO2 is given the grid of described second upper arm transistor by described second grid driver 106.
Therefore, described first upper arm transistor turns off, described first underarm transistor turns, and export the first drive output signal OUT1 at the first drive output signal pin (13) and export the first detection signal N1 at the first detection signal pin (14), and described second upper arm transistor turns, described second underarm transistor turns off, and exports the second drive output signal OUT2 at the second drive output signal pin (16) and export the second detection signal N2 at the second detection signal pin (15).
Finally, described power drive 115 device drives loaded work piece according to the described first drive output signal OUT1 exported and the second drive output signal OUT2.Meanwhile, detect by described first detection signal N1 and the second detection signal N2 the electric current flow through in real time, prevent over-current phenomenon avoidance from occurring.
The packaging system of all right single-phase integrated drive electronics of corresponding described compact of the single-phase integrated drive electronics that the present invention proposes, there is identical pin configuration and pin centre-to-centre spacing, this is no longer going to repeat them, can see the detailed description about each signal pins and power pin in embodiment one.
Single-phase integrated drive electronics is as shown in Figure 7 applied, as shown in Figure 8, described single-phase integrated drive electronics can also be made up of described first upper arm bias voltage pin (1) and the second upper arm bias voltage pin (6) is for driving the bias voltage pin units of described first upper arm transistor and the second upper arm transistor respectively.Described first upper arm bias voltage pin (1) produces described first upper arm bias voltage VB1 by an outside bootstrap network (the resistance R1 in Fig. 8, diode D1, electric capacity C1), drives described first upper arm transistor 40; Described second upper arm bias voltage pin (6) produces described second upper arm bias voltage VB2 by another outside bootstrap network (the resistance R2 in Fig. 8, diode D2, electric capacity C2), drives described second upper arm transistor 20.
[embodiment two]
On the basis of embodiment one, see Fig. 9, and in conjunction with Figure 10 and Figure 11, the packaging system of the single-phase integrated drive electronics of described compact also comprises: the first bootstrap diode pressure welding point 69 and the second bootstrap diode pressure welding point 59, described first bootstrap diode pressure welding point 69 is formed on described first grid driver 104, and described second bootstrap diode pressure welding point 59 is formed on described second grid driver 106.
The packaging system of the single-phase integrated drive electronics of described compact also comprises the first bootstrap diode chip Ji Dao and the second bootstrap diode chip Ji Dao, described first bootstrap diode chip Ji Dao is formed on described lead frame, and near described first grid driving chip Ji Dao, described second bootstrap diode chip Ji Dao is formed on described lead frame, and near described second grid driving chip Ji Dao.
The packaging system of the single-phase integrated drive electronics of described compact also comprises the first bootstrap diode chip 80 and the second bootstrap diode chip 70, described first bootstrap diode chip 80 to be arranged on described first bootstrap diode chip Ji Dao and to be electrically connected with described first function pin and the first bootstrap diode pressure welding point, and described second bootstrap diode chip 70 to be formed on described second bootstrap diode chip Ji Dao and to be electrically connected with described second function pin and the second bootstrap diode pressure welding point.Thus, be integrated on same packaging body at described first bootstrap diode chip 80 and the second bootstrap diode chip 70 with described high voltage gate drivers and analog line driver, therefore, the reliability between each device improves, and also reduces extra attachment cost.
Visible, because described high voltage gate drivers and analog line driver are integrated on same packaging body, different efficient layouts can be carried out easily to the mutual circuit between described high voltage gate drivers and analog line driver, so that when the total quantity of described signal pins and power pin is constant, the difference that not only can need according to application reasonably utilizes described signal pins to receive input signal, and produces drive output signal driving loaded work piece by described power pin; The first function pin that the described signal pins that do not coexist that can also need according to application is arranged and the second function pin place load different devices, effectively to detect single-phase integrated drive electronics, reduce rate of breakdown and maintenance problem.
Based on the packaging system of the single-phase integrated drive electronics of compact described in embodiment two, the present invention proposes corresponding single-phase integrated drive electronics.Single-phase integrated drive electronics is as shown in figure 12 compared with single-phase integrated drive electronics as shown in Figure 7, and single-phase integrated drive electronics difference is as shown in figure 12:
See Figure 10 and Figure 11, described first grid driver has the first bootstrap diode pressure welding point 69, in described first grid internal drive, described first bootstrap diode pressure welding point 69 drives bias voltage pressure welding point 66 to be connected with first grid, and after described first bootstrap diode pressure welding point 69 is connected with the anode of the first bootstrap diode 80 by described first function pin (2), the negative electrode of the first bootstrap diode 80 draws described first upper arm bias voltage pin (1) by described first bootstrap diode chip Ji Dao; Described second grid driver has the second bootstrap diode pressure welding point 59, in described second grid internal drive, described second bootstrap diode pressure welding point 59 drives bias voltage pressure welding point 56 to be connected with second grid, and after described second bootstrap diode pressure welding point 59 is connected with the anode of the second bootstrap diode 70 by described second function pin (7), the negative electrode of the second bootstrap diode 70 draws described second upper arm bias voltage pin (6) by described second bootstrap diode chip Ji Dao.
Single-phase integrated drive electronics is as shown in figure 12 applied, as shown in figure 13, described single-phase integrated drive electronics can also be made up of described first upper arm bias voltage pin (1) and the second upper arm bias voltage pin (6) is for driving the bias voltage pin units of described first upper arm transistor and the second upper arm transistor respectively.Described first upper arm bias voltage pin (1) produces described first upper arm bias voltage VB1 by an external bootstrap capacity C1, drives described first upper arm transistor 40; Described second upper arm bias voltage pin (6) produces described second upper arm bias voltage VB2 by another external bootstrap capacity C2, drives described second upper arm transistor 20.
[embodiment three]
On the basis of embodiment one or embodiment two, the packaging system 100 of the single-phase integrated drive electronics of described compact also comprises: be formed in the multiple second chip Ji Dao on described lead frame 102, and the switch element be arranged on respectively on each described second chip Ji Dao, each described switch element respectively by a upper arm switch element and once arm switch unit head and the tail connect and formed.
Preferably, each described upper arm switch element comprises an open resistance RG_ON, and each described underarm switch element comprises a closedown resistance RG_OFF.
The initiating terminal of the switch element of one of them head and the tail series connection, intermediate ends and ending end are received respectively described first upper arm bias voltage VB1, the first upper arm drive singal HO1 and the first upper arm bias voltage ground VS1; The initiating terminal of the switch element of wherein another head and the tail series connection, intermediate ends and ending end are received described first grid respectively and drives bias voltage VCC1, the first underarm drive singal LO1 and the described COM of point voltage altogether; The initiating terminal of the switch element of wherein another head and the tail series connection, intermediate ends and ending end are received respectively described second upper arm bias voltage VB2, the second upper arm drive singal HO2 and the second upper arm bias voltage ground VS2; The initiating terminal of the switch element of wherein another head and the tail series connection again, intermediate ends and ending end are received described second grid respectively and drives bias voltage VCC2, the second underarm drive singal LO2 and the described COM of point voltage altogether.
Because described high voltage gate drivers and analog line driver are integrated on same packaging body, the line of IC interior is very short, wiring inductance and connection resistances minimum, so the grid filter capacitor Cgate originally placed for preventing Miller effect can omit.And, originally each driving resistance R being used for rising and the trailing edge time regulating described power device to output signal is divided into described open resistance RG_ON and closes resistance RG_OFF by the present invention, and be integrated in described first grid driver and second grid driver, according to the requirement of system and the parameter of power device, the resistance value of the described open resistance RG_ON of suitable adjustment and closedown resistance RG_OFF, can regulate and described first upper arm drive singal HO1, first underarm drive singal LO1, the opening and closing of the power device that second upper arm drive singal HO2 is connected respectively with the second underarm drive singal LO2, make described single-phase integrated drive electronics on the basis keeping less EMI, also less switching loss can be had.
Based on the packaging system of the single-phase integrated drive electronics of compact described in embodiment three, the present invention proposes corresponding single-phase integrated drive electronics, single-phase integrated drive electronics based on embodiment three has first grid driver and second grid driver, because described first grid driver is identical with second grid activation configuration, therefore, Figure 14 is for wherein said first grid driver, compared with the described first grid driver shown in Fig. 3, single-phase integrated drive electronics difference is as shown in figure 14:
Described first grid driver is integrated with two switch elements, each described switch element includes a upper arm switch element and once arm switch unit, carrys out the connected power device of conducting by regulating the size of the open resistance RG_ON arranged in each described upper arm switch element; Connected power device is closed by regulating the size of the closedown resistance RG_OFF arranged in each described underarm switch element.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.For system disclosed in embodiment, owing to corresponding to the method disclosed in Example, so description is fairly simple, relevant part illustrates see method part.
Professional can also recognize further, in conjunction with unit and the algorithm steps of each example of embodiment disclosed herein description, can realize with electronic hardware, computer software or the combination of the two, in order to the interchangeability of hardware and software is clearly described, generally describe composition and the step of each example in the above description according to function.These functions perform with hardware or software mode actually, depend on application-specific and the design constraint of technical scheme.Professional and technical personnel can use distinct methods to realize described function to each specifically should being used for, but this realization should not thought and exceeds scope of the present invention.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.

Claims (12)

1. a packaging system for the single-phase integrated drive electronics of compact, comprising:
Lead frame;
Form the multiple first chip Ji Dao on described lead frame;
The signal pins being respectively formed at the relative both sides of described lead frame and the power pin of extraction is bent by described multiple first chip Ji Dao;
Be arranged on first grid driver, second grid driver, the first upper arm transistor, the first underarm transistor, the second upper arm transistor and the second underarm transistor on each described first chip Ji Dao respectively, wherein, described first grid driver, second grid driver, the first upper arm transistor, the first underarm transistor, the second upper arm transistor and the second underarm transistor are electrically connected; And
Packaging body, the length of described packaging body is 17.8mm-25.8mm, and width is 11mm-13mm; Wherein,
The signal pins that described first grid driver is corresponding comprises the first upper arm bias voltage pin, first grid driving bias voltage pin, the first upper arm input signal pin, the first underarm input signal pin and is total to place voltage pin, and the signal pins that described second grid driver is corresponding comprises the second upper arm bias voltage pin, second grid drives bias voltage pin, the second upper arm input signal pin, the second underarm input signal pin and described common place voltage pin;
The power pin that described first upper arm transistor is corresponding comprises upper arm positive voltage pin and the first drive output signal pin, the power pin that described first underarm transistor is corresponding comprises the first described drive output signal pin and the first detection signal pin, the power pin that described second upper arm transistor is corresponding comprises described upper arm positive voltage pin and the second detection signal pin, and the power pin that described second underarm transistor is corresponding comprises the second described detection signal pin and the second drive output signal pin;
Centre-to-centre spacing between described first grid driving bias voltage pin and the first upper arm bias voltage pin, the centre-to-centre spacing between described second grid driving bias voltage pin and the second upper arm bias voltage pin, the centre-to-centre spacing between described first underarm input signal pin and the second upper arm bias voltage pin are more than the twice of low pressure pin centre-to-centre spacing.
2. the packaging system of the single-phase integrated drive electronics of compact as claimed in claim 1, is characterized in that,
Centre-to-centre spacing between described upper arm positive voltage pin and the first drive output signal pin, the centre-to-centre spacing between described first drive output signal pin and the first detection signal pin, the centre-to-centre spacing between described second drive output signal pin and the second detection signal pin are more than the twice of low pressure pin centre-to-centre spacing.
3. the packaging system of the single-phase integrated drive electronics of compact as claimed in claim 2, is characterized in that,
Described first grid drives between bias voltage pin and the first upper arm bias voltage pin has the first function pin, and described second grid drives between bias voltage pin and the second upper arm bias voltage pin has the second function pin.
4. the packaging system of the single-phase integrated drive electronics of compact as claimed in claim 3, is characterized in that,
Load temperature sensor or load fault signal generator at described first function pin and the second function pin or load over-current signal comparator.
5. the packaging system of the single-phase integrated drive electronics of compact as claimed in claim 3, is characterized in that, also comprise:
The the second bootstrap diode pressure welding point forming the first bootstrap diode pressure welding point on described first grid driver and formed on described second grid driver;
Form the first bootstrap diode chip Ji Dao on described lead frame and the second bootstrap diode chip Ji Dao;
To be arranged on described first bootstrap diode chip Ji Dao and with described first function pin and described first bootstrap diode pressure welding point the first bootstrap diode chip by being electrically connected;
To be arranged on described second bootstrap diode chip Ji Dao and with described second function pin and described second bootstrap diode pressure welding point the second bootstrap diode chip by being electrically connected.
6. the packaging system of the single-phase integrated drive electronics of the compact as described in claim 4 or 5, is characterized in that, also comprise:
Form the multiple second chip Ji Dao on described lead frame;
Be arranged on the switch element on each described second chip Ji Dao respectively, each described switch element includes a upper arm switch element and once arm switch unit.
7. a single-phase integrated drive electronics, is characterized in that, comprising:
Be integrated in high voltage gate drivers, analog line driver, signal pins and the power pin on same packaging body, wherein, described high voltage gate drivers is made up of first grid driver and second grid driver, and described analog line driver is made up of the first upper arm transistor, the first underarm transistor, the second upper arm transistor and the second underarm transistor;
Described high voltage gate drivers receives the drive singal of input signal generation by described signal pins, and described analog line driver responds described drive singal and exports the drive output signal for control load work by described power pin; Wherein,
The signal pins that described first grid driver is corresponding is the first upper arm bias voltage pin, first grid driving bias voltage pin, the first upper arm input signal pin, the first underarm input signal pin and common place voltage pin, and the signal pins that described second grid driver is corresponding is that second grid drives bias voltage pin, the second upper arm bias voltage pin, the second upper arm input signal pin, the second underarm input signal pin and described common place voltage pin;
The power pin that described first upper arm transistor is corresponding is upper arm positive voltage pin and the first drive output signal pin, the power pin that described first underarm transistor is corresponding is the first described drive output signal pin and the first detection signal pin, the power pin that described second upper arm transistor is corresponding is described upper arm positive voltage pin and the second detection signal pin, and the power pin that described second underarm transistor is corresponding is the second described detection signal pin and the second drive output signal pin;
Centre-to-centre spacing between described first grid driving bias voltage pin and the first upper arm bias voltage pin, the centre-to-centre spacing between described second grid driving bias voltage pin and the second upper arm bias voltage pin, the centre-to-centre spacing between described first underarm input signal pin and the second upper arm bias voltage pin are the twice of low pressure pin centre-to-centre spacing.
8. single-phase integrated drive electronics as claimed in claim 7, is characterized in that,
Centre-to-centre spacing between described upper arm positive voltage pin and the first drive output signal pin, the centre-to-centre spacing between described first drive output signal pin and the first detection signal pin, the centre-to-centre spacing between described second drive output signal pin and the second detection signal pin are more than the twice of low pressure pin centre-to-centre spacing.
9. single-phase integrated drive electronics as claimed in claim 8, is characterized in that,
Described first grid drives between bias voltage pin and the first upper arm bias voltage pin has the first function pin; Described second grid drives between bias voltage pin and the second upper arm bias voltage pin has the second function pin.
10. single-phase integrated drive electronics as claimed in claim 9, is characterized in that,
Load temperature sensor or load fault signal generator at described first function pin and the second function pin or load over-current signal comparator.
11. single-phase integrated drive electronicss as claimed in claim 9, is characterized in that,
Described first grid driver has the first bootstrap diode pressure welding point, described first bootstrap diode pressure welding point is electrically connected with the first function pin, and described first function pin and the first upper arm bias voltage pin are connected with the anode of the first bootstrap diode and cathodic electricity respectively;
Described second grid driver has the second bootstrap diode pressure welding point, described second bootstrap diode pressure welding point is electrically connected with the second function pin, and described second function pin and the second upper arm bias voltage pin are connected with the anode of the second bootstrap diode and cathodic electricity respectively.
12. single-phase integrated drive electronicss as described in claim 10 or 11, is characterized in that, also comprise integrated multiple switch elements for power drive, and each described switch element includes a upper arm switch element and once arm switch unit.
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