CN102929059B - A kind of thin film transistor liquid crystal display screen - Google Patents
A kind of thin film transistor liquid crystal display screen Download PDFInfo
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- CN102929059B CN102929059B CN201210458653.5A CN201210458653A CN102929059B CN 102929059 B CN102929059 B CN 102929059B CN 201210458653 A CN201210458653 A CN 201210458653A CN 102929059 B CN102929059 B CN 102929059B
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Abstract
The invention discloses a kind of TFT LCD, comprise glass substrate, grid layer, the first protective seam, data line layer, the second protective seam and pixel electrode layer and the ITO layer be located between glass substrate and the first protective seam; The ITO layer of viewing area is connected with grid layer, and the overlapping part of ITO layer and pixel electrode layer forms memory capacitance; The ITO layer of non-display area covers the derby surface of grid layer, and the derby of grid layer is for connecting integrated circuit and flexible PCB, and pixel electrode layer is connected with ITO layer by counterbore.The present invention adopts the technical scheme of setting up ITO layer between glass substrate and the first protective seam, in viewing area, grid layer and pixel electrode layer can be replaced to form memory capacitance by ITO layer, thus can reduce the area of grid layer, improves transmittance; At non-display area, ITO layer cover gate layer can be utilized, prevent grid layer to be corroded.
Description
Technical field
The present invention relates to LCDs technical field, be specifically related to a kind of thin film transistor liquid crystal display screen.
Background technology
A kind of thin film transistor (TFT) (Thin Film Transistor; TFT) LCDs (Liquid CrystalDisplay; the cross section of viewing area LCD) as shown in Figure 1; comprise the glass substrate 101 bonded successively, grid layer 102, the first protective seam 103; data line layer 104; second protective seam 105 and pixel electrode layer 106, wherein, grid layer 102 and pixel electrode layer 106 form memory capacitance Cs.The grid of grid layer is metal material, such as Mo-Al-Mo, and light through grid layer, cannot can cause the loss of transmittance, makes the transmittance of TFTLCD lower.
The cross section of the non-display area of a kind of TFT LCD as shown in Figure 2, comprises the glass substrate 201 bonded successively, grid layer 202, the first protective seam 203, data line layer, the second protective seam 205 and pixel electrode layer 206.The grid layer 202 of non-display area includes derby, derby is by anisotropic conductive film (ACF) etc. and integrated circuit (Integrated Circuit, and flexible PCB (Flexible PrintedCircuit IC), FPC) carry out pressing, realize the electrical connection of TFT LCD and FPC.Pixel electrode layer 206 is connected with the derby of grid layer 202 by via hole 207.In production, crossing hole site easily has steam, developer solution and etching solution etc. residual, makes the derby of grid layer be easy to oxidized corrosion, poor reliability.
Summary of the invention
The embodiment of the present invention provides a kind of thin film transistor liquid crystal display screen, low with the transmittance of the viewing area solving existing TFT LCD, the technical matters of the easy oxidized corrosion of grid layer of non-display area.
A kind of thin film transistor liquid crystal display screen; its viewing area comprises the glass substrate bonded successively; grid layer; first protective seam; data line layer, the second protective seam and pixel electrode layer, be also provided with layer of ito between described glass substrate and the first protective seam; described ITO layer is connected with described grid layer, and the overlapping part of described ITO layer and described pixel electrode layer forms memory capacitance.
A kind of thin film transistor liquid crystal display screen; its non-display area comprises the glass substrate bonded successively; grid layer; first protective seam; data line layer, the second protective seam and pixel electrode layer, described grid layer comprises the derby for connecting integrated circuit and flexible PCB; also be provided with the layer of ito covering described derby surface between described glass substrate and the first protective seam, described pixel electrode layer is connected with described ITO layer by counterbore.
TFT LCD disclosed in the embodiment of the present invention adopts the technical scheme of setting up ITO layer between glass substrate and the first protective seam, makes in viewing area, can form memory capacitance, thus reduce the area of grid layer, improve transmittance with ITO layer and pixel electrode layer; At non-display area, ITO layer cover gate layer can be utilized, prevent the oxidized corrosion of grid layer.
Accompanying drawing explanation
Fig. 1 is the sectional view of the viewing area of existing TFT LCD;
Fig. 2 is the sectional view of the non-display area of existing TFT LCD;
Fig. 3 is the sectional view of the viewing area of embodiment of the present invention TFT LCD;
Fig. 4 is the sectional view of the non-display area of embodiment of the present invention TFT LCD.
Embodiment
The embodiment of the present invention provides a kind of thin film transistor liquid crystal display screen, and the transmittance that can solve the viewing area of existing TFT LCD is low, the technical matters of the easy oxidized corrosion of grid layer of non-display area.Below be described in detail respectively.
Embodiment one,
Please refer to Fig. 3, the thin film transistor liquid crystal display screen (TFT LCD) that the embodiment of the present invention provides, its viewing area comprises the glass substrate 301 bonded successively; grid layer 302; first protective seam 303, data line layer 304, the second protective seam 305 and pixel electrode layer 306.
In the present embodiment; tin indium oxide (Indium tin oxide is also provided with between described glass substrate 301 and the first protective seam 303; ITO) layer 307, described ITO layer 307 is connected with described grid layer 302, and described ITO layer 307 forms memory capacitance with the overlapping part of described pixel electrode layer 306.This memory capacitance with the first and second protective seams for medium.
Said ITO layer is mainly arranged on the position corresponding with pixel electrode layer 306, to form the memory capacitance with larger capacitance with pixel electrode layer 306.A part for ITO layer can be located at described grid layer 302 surface, and cover described grid layer 302 completely, only to utilize ITO layer when forming memory capacitance, and grid layer that need not be original, make the capacitance of memory capacitance be easier to regulate, field strength distribution evenly.
In the present embodiment, the ITO layer of employing can conduct electricity light-permeable, and forming memory capacitance for replacing grid layer can not stop light, can improve transmittance.In order to improve transmittance further, it is little as much as possible that the area of grid layer preferably does by the present embodiment.
To sum up, embodiments provide a kind of TFT LCD, adopt the technical scheme of setting up ITO layer between the glass substrate in viewing area and the first protective seam; make in viewing area; memory capacitance can be formed with ITO layer and pixel electrode layer, thus reduce the area of grid layer, improve transmittance.
Embodiment two,
Please refer to Fig. 4; the thin film transistor liquid crystal display screen (TFT LCD) that the embodiment of the present invention provides; its non-display area comprises the glass substrate 401 bonded successively; grid layer 402; first protective seam 403; data line layer, the second protective seam 405 and pixel electrode layer 406, described grid layer 402 comprises the derby for connecting integrated circuit and flexible PCB.
At the non-display area of TFT LCD, grid layer 402 includes the derby connected, but does not comprise grid, owing to belonging to same layer with the grid of viewing area, is still called grid layer.
In the present embodiment, between the glass substrate 401 and the first protective seam 403 of non-display area, be also provided with the ITO layer 407 covering described derby surface, described pixel electrode layer 406 is connected with described ITO layer 407 by counterbore 408.
In prior art, pixel electrode layer 406 is directly connected with grid layer 402 by via hole, makes the derby of grid layer 402 be easy to oxidized corrosion.And in the present embodiment, pixel electrode layer 406 is connected with ITO layer 407 by via hole, ITO layer 407 is connected with grid layer 402 again.And ITO has very strong antioxidant anticorrosive ability, can prevent by residue oxidation corrosiones such as the steam of mistake hole site, developer solution and etching solutions.
In order to make TFT LCD have stronger antioxidant anticorrosive ability, in the present embodiment, described derby surface can all be covered by described ITO layer 407.
To sum up, embodiments provide a kind of TFT LCD, adopt the technical scheme of setting up ITO layer between the glass substrate and the first protective seam of non-display area; make at non-display area; ITO layer cover gate layer can be utilized, prevent the oxidized corrosion of grid layer, improve reliability.
Above the thin film transistor liquid crystal display screen that the embodiment of the present invention provides is described in detail, but the explanation of above embodiment just understands method of the present invention and core concept thereof for helping, and should not be construed as limitation of the present invention.Those skilled in the art are in the technical scope that the present invention discloses, and the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.
Claims (2)
1. a thin film transistor liquid crystal display screen, its viewing area comprises the glass substrate bonded successively, grid layer, the first protective seam, data line layer, and the second protective seam and pixel electrode layer, is characterized in that:
Also layer of ito is provided with between described glass substrate and the first protective seam, described ITO layer is connected with described grid layer, the overlapping part of described ITO layer and described pixel electrode layer forms memory capacitance, this memory capacitance with described first protective seam and described second protective seam for medium;
A part for described ITO layer is located at described grid layer surface, and covers described grid layer.
2. a thin film transistor liquid crystal display screen, its non-display area comprises the glass substrate bonded successively, grid layer; first protective seam, data line layer, the second protective seam and pixel electrode layer; described grid layer comprises the derby for connecting integrated circuit and flexible PCB, it is characterized in that:
Also be provided with the layer of ito covering described derby surface between described glass substrate and the first protective seam, described pixel electrode layer is connected with described ITO layer by counterbore,
Described derby surface is all covered by described Ι Τ Ο layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210458653.5A CN102929059B (en) | 2012-11-14 | 2012-11-14 | A kind of thin film transistor liquid crystal display screen |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210458653.5A CN102929059B (en) | 2012-11-14 | 2012-11-14 | A kind of thin film transistor liquid crystal display screen |
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| CN102929059A CN102929059A (en) | 2013-02-13 |
| CN102929059B true CN102929059B (en) | 2015-07-29 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103728804B (en) * | 2013-12-27 | 2016-02-24 | 京东方科技集团股份有限公司 | A kind of motherboard, array base palte and preparation method, display device |
| CN105355604B (en) * | 2015-10-12 | 2018-04-20 | 深超光电（深圳）有限公司 | Thin-film transistor array base-plate |
| CN107742634A (en) * | 2017-09-19 | 2018-02-27 | 合肥惠科金扬科技有限公司 | A kind of AMOLED display screens |
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| US4778560A (en) * | 1986-06-03 | 1988-10-18 | Matsushita Electric Industrial Co., Ltd. | Method for production of thin film transistor array substrates |
| JPH0961835A (en) * | 1995-08-22 | 1997-03-07 | Hitachi Ltd | Liquid crystal display substrate and its production |
| CN1702531A (en) * | 2004-05-27 | 2005-11-30 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and fabricating method thereof |
| JP2008098673A (en) * | 2007-12-21 | 2008-04-24 | Mitsubishi Electric Corp | Liquid display device using thin film transistor |
| JP2010230965A (en) * | 2009-03-27 | 2010-10-14 | Hitachi Displays Ltd | Display device and method for manufacturing display device |
| CN102569293A (en) * | 2011-11-21 | 2012-07-11 | 友达光电股份有限公司 | Thin film transistor array and circuit structure thereof |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4778560A (en) * | 1986-06-03 | 1988-10-18 | Matsushita Electric Industrial Co., Ltd. | Method for production of thin film transistor array substrates |
| JPH0961835A (en) * | 1995-08-22 | 1997-03-07 | Hitachi Ltd | Liquid crystal display substrate and its production |
| CN1702531A (en) * | 2004-05-27 | 2005-11-30 | Lg.菲利浦Lcd株式会社 | Liquid crystal display device and fabricating method thereof |
| JP2008098673A (en) * | 2007-12-21 | 2008-04-24 | Mitsubishi Electric Corp | Liquid display device using thin film transistor |
| JP2010230965A (en) * | 2009-03-27 | 2010-10-14 | Hitachi Displays Ltd | Display device and method for manufacturing display device |
| CN102569293A (en) * | 2011-11-21 | 2012-07-11 | 友达光电股份有限公司 | Thin film transistor array and circuit structure thereof |
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