CN102928480A - Method for determining LUMO value and HOMO value of semiconductor nano-crystals through utilizing cyclic voltammetry - Google Patents

Method for determining LUMO value and HOMO value of semiconductor nano-crystals through utilizing cyclic voltammetry Download PDF

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CN102928480A
CN102928480A CN2011103038384A CN201110303838A CN102928480A CN 102928480 A CN102928480 A CN 102928480A CN 2011103038384 A CN2011103038384 A CN 2011103038384A CN 201110303838 A CN201110303838 A CN 201110303838A CN 102928480 A CN102928480 A CN 102928480A
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value
semiconductor nano
lumo
homo
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栾伟玲
付红红
袁斌霞
侯晓卿
涂善东
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East China University of Science and Technology
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Abstract

The invention relates to a method for determining the LUMO value and the HOMO value of semiconductor nano-crystals through utilizing cyclic voltammetry. The semiconductor nano-crystals are dispersed in a solvent to form a semiconductor nano-crystal solution, the surface of a work electrode (6) is coated with the semiconductor nano-crystal solution in a drop manner to form a film, the electrochemical performances of the semiconductor nano-crystals are tested under the protection of an inert gas by means of the three-electrode system of an electrochemical work station, and the potential in the initial position of an oxidation reduction reaction of the nano-crystals is extracted, so the LUMO value, the HOMO value and the forbidden bandwidth value of the semiconductor nano-crystals are obtained through calculating in order to realize the accurate determination of the energy band structure of the semiconductor nano-crystals, and the test result obtained in the invention is smaller than the result obtained through using absorption spectrometry. The drop coating manner in the method provided by the invention makes the semiconductor nano-crystals to form the film on the surface of the work electrode, so the experimental material adoption amount is reduced; and the protection of the inert gas avoids the instability of the semiconductor nano-crystals, so the determination of the energy band structures of various semiconductor nano-crystals can be realized.

Description

A kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value
Technical field
The invention belongs to the nano ZnO field tests, particularly, relate to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value.
Background technology
Semiconductor nano because its large specific surface area, efficiently carrier transport ability, be different from the character such as optics, electricity and magnetics that body phase material is different from again general molecule, have broad application prospects at numerous areas such as solar cell, information storage and luminescent devices, become the focus that vast researcher is paid close attention to.The level structure of semiconductor nano comprises the LUMO (Lowest Unoccupied Molecular Orbital) that forms energy level, minimum track and the HOMO (Highest Occupied Molecular Orbital) of energy level that does not namely occupy electronics namely occupied the highest track of energy level of electronics.It has material impact to nanocrystalline light, electric property and the application in fields such as photoelectricity.Different size is different from LUMO and the HOMO of the semiconductor nano of component, grasps its band structure to resolving nanocrystalline electric property and using significant.Yet because the impact of quantum size effect and surface effect, the level structure of semiconductor nano is compared with bulk material larger difference, needs test determination.
At present, the method for sign semiconductor nano energy level mainly contains absorption spectroscopy, quantum chemistry calculation method, photoelectron emissions spectrometry etc.Wherein, the absorption spectroscopy operate miss is larger, and can only obtain nanocrystalline energy gap, and can't calculate nanocrystalline LUMO and HOMO value; The quantum chemistry calculation method is because the imperfection of theoretical foundation often causes the large error of calculation; The photoelectron emissions spectrometry is not then generally adopted because needs use expensive instrument.
Cyclic voltammetry is a kind of electrochemical research method commonly used, it is the common method of measuring the conjugated polymer level structure, sweep speed by the control electrode electromotive force, repeatedly scan with the triangular waveform one or many in time, make reduction and oxidation reaction alternately occur on the electrode, thereby record current-potential curve obtains corresponding data.Cyclic voltammetry is commonly used to test the band edge position of Organic Electricity active layer material.Usually, need to dispose the solution of electroactive material during by cyclic voltammetry test organism band edge position, the experiment materials are many.Yet since nanocrystalline more active, instability had, and relatively more responsive to environment, the test of its band edge position is difficulty relatively.
Summary of the invention
For solving the problem of above-mentioned existence; the object of the present invention is to provide a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value; described method is utilized cyclic voltammetry; under inert gas shielding; semiconductor nano is dripped the cyclic voltammetry curve that overlays on working electrode surface formation compact nm crystal films test semiconductor nano; extract the oxidation in the cyclic voltammetry curve; reduction take-off potential value; by formula; realize semiconductor nano LUMO; the mensuration of HOMO value and bandwidth; and will compare by the energy band value that nanocrystalline energy band value and the absorption spectroscopy of cyclic voltammetry are calculated, deviation is little.
For achieving the above object, the present invention takes following technical scheme:
A kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value is characterized in that, comprises the steps:
1), semiconductor nano is dispersed in the non-polar organic solvent formation semiconductor nano solution;
2), in inert gas, with step 1) described in semiconductor nano solution drip the working electrode surface that is overlying on electrochemical workstation, form the semiconductor nano film at described working electrode surface;
3), under inert gas shielding, utilize electrochemical workstation to scan, obtain cyclic voltammetry curve;
4), from step 3) extraction and oxidation peak in the cyclic voltammetry curve that obtains, potential value that the reduction peak value is corresponding, oxidation peak, potential value substitution formula corresponding to reduction peak value with semiconductor nano, calculate LUMO value, HOMO value and the energy gap of semiconductor nano, described formula is:
E HOMO＝-(E′ OX+X)
E LUMO＝-(E′ red+X)
E gCV＝E HOMO-E LUMO＝E′ OX-E′ red
Wherein, E HOMOThe HOMO value of semiconductor nano, E LUMOThe LUMO value of semiconductor nano, E GCVThe bandwidth that obtains by cyclic voltammetry, E` OXInitial oxidation potential energy, E` RedBe initial reduction potential energy, X is constant.
According to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the present invention, employing be that the concentration of telling semiconductor nano solution is 0.01M.
According to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the present invention, preferably, the concentration of described semiconductor nano solution is greater than 0, and is less than or equal to 1/10 of concentration of electrolyte in the electrochemical workstation.
According to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the present invention, preferably, described non-polar organic solvent is chloroform, toluene or normal hexane.
According to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the present invention, preferably, described semiconductor nano film thickness is 80 microns～120 microns.
According to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the present invention, employing be step 4) described in definite method of X value as follows:
A), get intermediate, determine intermediate with respect to the energy level value of vacuum level, determine that intermediate is with respect to the potential value of contrast electrode;
B), step a) described in difference between energy level value and the potential value, be the X value.
Wherein, described intermediate is ferricinum ion pair.
According to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the present invention, employing be that the working electrode of described electrochemical workstation is glassy carbon electrodes, be that platinum filament, contrast electrode are Ag/Ag to electrode +
According to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the present invention, employing be that the electrolytic solution in the described electrochemical workstation is formed by the configuration of tetrabutyl hexafluorophosphoric acid amine and acetonitrile.
According to a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the present invention, preferably, the electrolytic cell of described electrochemical workstation is connected with inert gas reservoir vessel, variable valve, inert gas import adapter and inert gas discharge connection, described working electrode, electrode and contrast electrode are connected with parameter input and signal detection system respectively by wire on the top separately, described parameter is inputted and signal detection system is connected with the testing result output system by wire.
A kind of beneficial effect of the method for cyclic voltammetry semiconductor nano LUMO value and HOMO value that utilizes provided by the present invention is:
Adopt electrochemical workstation, designed the device of the nanocrystalline LUMO value of accurate measuring semiconductor and HOMO value, be semiconductor nano solution in inert gas, drip and to be overlying on working electrode surface, make semiconductor nano form film at working electrode surface, reduced the experiment materials; And the protection by inert gas, avoid the unstable of semiconductor nano, thereby realized the Accurate Determining of semiconductor nano band structure, and guaranteed measuring accuracy.In addition, the present invention has stronger dirigibility, and is simple to operate, can be generalized to the test of multiple semiconductor nano band structure.
Description of drawings
Fig. 1 is a kind of operative installations synoptic diagram that utilizes the method for cyclic voltammetry semiconductor nano LUMO value and HOMO value provided by the invention.
Among Fig. 1,1, electrolytic solution; 2, electrolytic cell; 3, to electrode; 4, the inert gas discharge connection; 5, contrast electrode; 6, working electrode; 7, inert gas import is taken over; 8, variable valve; 9, the inert gas reservoir vessel; 16, wire is inputted and signal detection system with parameter respectively; 17, the testing result output system.
Fig. 2 is the energy level of semiconductor nano and the corresponding relation synoptic diagram of contrast electrode current potential and vacuum level.
Among Fig. 2,10, vacuum level; 11, intermediate; 12, the energy level of semiconductor nano; 13, the contrast electrode current potential; 18, intermediate 11 is with respect to the energy level value of vacuum level 10; 19, intermediate 11 is with respect to the potential value of contrast electrode current potential 13; 20, the energy level 12 of semiconductor nano is with respect to the potential value of contrast electrode current potential 13; 21, the energy level 12 of semiconductor nano is with respect to the energy level value of vacuum level 10.
Fig. 3 a is the cyclic voltammetric family curve in the CdSe semiconductor nano scanning process.
Fig. 3 b is the cyclic voltammetric family curve after the CdSe semiconductor nano is stablized.
Among Fig. 3 b, 14, the reduction reaction electromotive force is interval; 15, the oxidation reaction electromotive force is interval.
Fig. 4 is the ultraviolet-visible absorption spectroscopy of CdSe semiconductor nano.
Embodiment
Below in conjunction with accompanying drawing a kind of method of cyclic voltammetry semiconductor nano LUMO value and HOMO value of utilizing provided by the invention is further explained explanation.
At first, the connected mode of electrochemical workstation system of the present invention is as follows:
As shown in Figure 1, working electrode 6, electrode 3 and contrast electrode 5 are placed electrolytic cell 2, described working electrode 6, electrode 3 and contrast electrode 5 bottoms are immersed in the electrolytic solution 1, described working electrode 6, being connected separately with contrast electrode to electrode 3, the top is connected 16 with parameter input and signal detection system respectively by wire, described parameter input and signal detection system 16 are connected with testing result output system 17 by wire, described electrolytic cell 2 tops are connected with inert gas import in turn near working electrode 6 one ends and take over 7, variable valve 8 and inert gas reservoir vessel 9, described electrolytic cell 2 tops are near electrode 3 one ends are connected with in turn variable valve 8 and inert gas discharge connection 4.
Then, technological process of the present invention is as follows:
(1) utilize the scanning of electrochemical workstation three-electrode system, described working electrode 6 is glassy carbon electrodes, is platinum filament to electrode 3, and contrast electrode 5 is Ag/Ag +The scanning voltage scope guarantees in the scanning voltage scope according to the energy gap adjustment of semiconductor nano, oxidation peak, the reduction peak of semiconductor nano occur;
(2) semiconductor nano to be measured is dispersed in the non-polar organic solvent, forms semiconductor nano solution, control its concentration greater than 0, and be less than or equal to and be 1/10 of electrolytic solution 1 concentration;
Wherein, obtain good, stable signal in order to guarantee electrochemical workstation in test process, the concentration of assurance semiconductor nano solution is just much of that below 1/10 concentration of electrolyte, certainly, and also should be greater than 0; Simultaneously, the variation of concentration of electrolyte only can be on the mass formation impact of electrochemical workstation picked up signal in test process, and then the CV curve that obtains disturbed, cause noise and assorted peak larger, but can't exert an influence to LUMO value of the present invention, HOMO value.The concept of working concentration is to guarantee to obtain clearly CV curve, and the concentration of getting semiconductor nano solution is 1/10 when following of concentration of electrolyte, generally can obtain the less curve of noise, thereby can know and differentiate oxidation peak and reduction peak.
(3) in inert gas, scattered semiconductor nano solution dripped be overlying on clean working electrode 6 surfaces, after solvent evaporates, form the semiconductor nano film, control semiconductor nano film thickness is in 80 microns～120 micrometer ranges;
(4) under inert gas shielding, utilize the electrochemical workstation three-electrode system to scan (as shown in Figure 1).The electrolytic solution 1 for preparing is injected electrolytic cell 2, and regulating and controlling valve 8, and then control inert gas flow are until whole electrolytic cell 2 is in the atmosphere of inert gases.Fix electrode 3 and contrast electrode 5, then the working electrode 6 that is covered with the semiconductor nano film is transferred in the electrolytic cell 2, with working electrode 6, electrode 3 and contrast electrode 5 immersed in the electrolytic solution 1 and remain on the same level line.Connect the relevant connection wire, setup test.By signal and Parameters Input Unit 16 parameters such as scanning voltage scope, sweep speed, scanning times are set, in testing result output system 17, obtain cyclic voltammetry curve, carry out feedback and the adjustment of parameter according to the energy gap of different semiconductor nanos.Constantly change parameters, so that complete oxidation peak, reduction peak in set scanning voltage scope, occur;
(5) from the cyclic voltammetry curve of semiconductor nano, find oxidation peak, reduction peak, oxidation, the following formula of reduction take-off potential value substitution with semiconductor nano, calculate LUMO value, HOMO value and the bandwidth of semiconductor nano to be measured, described formula is:
E HOMO＝-(E′ OX+X)
E LUMO＝-(E′ red+X)
E gCV＝E HOMO-E LUMO＝E′ OX-E′ red
Wherein, E HOMONanocrystalline HOMO value, E LUMONanocrystalline LUMO value, E GCVThe bandwidth that obtains by cyclic voltammetry, E` OXInitial oxidation potential energy, E` RedInitial reduction potential energy.X is constant, the energy scale that is used for supplying in the galvanochemistry (is that the energy level 12 of semiconductor nano is with respect to the potential value 20 of contrast electrode 5, see Fig. 2) with physics in energy scale (be the energy level 12 of semiconductor nano with respect to the energy level value 21 of vacuum level 10, see Fig. 2) between difference;
Wherein, definite method of X value is as follows:
The energy level 12 of semiconductor nano is seen Fig. 2 with the corresponding relation synoptic diagram of contrast electrode current potential 13 and vacuum level 10.Can be by means of known intermediate 11 with respect to the energy level value 18 of vacuum level 10 and intermediate 11 with respect to the difference between the potential value 19 of contrast electrode current potential 13, be equal to the energy level 12 that draws semiconductor nano with respect to the energy level 12 of the potential value 20 of contrast electrode current potential 13 and semiconductor nano with respect to the difference X between the energy level value 21 of vacuum level 10 (being the difference between described energy level value 18 and the potential value 19).Be that the difference of energy level value 18 and potential value 19 is equal to the difference between potential value 20 and the energy level value 21.
In order to obtain stable cyclic voltammetry curve, reply semiconductor nano electrochemical behavior carries out repeatedly sweep test.Calculate LUMO value and the HOMO value of semiconductor nano with the corresponding relation of oxidation, reduction onset potential respectively by nanocrystalline LUMO value and HOMO value.
Key of the present invention is to utilize cyclic voltammetry; under inert gas shielding; semiconductor nano solution dripped overlay on working electrode 6 surface and form fine and close semiconductor nano film; and then the nanocrystalline cyclic voltammetry curve of measuring semiconductor; and therefrom extract oxidation in the cyclic voltammetry curve, reduction take-off potential value; by formula; realize the mensuration of semiconductor nano LUMO value, HOMO value and bandwidth; and will compare by the energy band value that nanocrystalline energy band value and the absorption spectroscopy of cyclic voltammetry are calculated, deviation is little.
Embodiment
At last, provide specific embodiments of the invention
Wherein, semiconductor nano of the present invention comprises in II-VI family or the IV-VI family semiconductor nano any, for example: ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, PbS, PbSe or PbTe.
The present invention is further elaborated as embodiment with cadmium selenide (CdSe) semiconductor nano for the below, but do not limit protection scope of the present invention.
1), to get the 0.01mmol particle diameter be that the CdSe semiconductor nano of 3.5nm is dispersed in the chloroform solvent of 1ml, ultrasonic 30min obtains homodisperse CdSe semiconductor nano solution 0.01M;
Wherein, except the chloroform solvent, also can select the non-polar organic solvents such as toluene or normal hexane;
2), get the electrolytic solution 1 of 0.1mmol tetrabutyl hexafluorophosphoric acid amine TBAPF6,1ml acetonitrile configuration 0.1M;
Wherein, tetrabutyl hexafluorophosphoric acid amine and acetonitrile can be replaced by other two kinds of solution herein, but this replace solution needs to be formed with the solution of ionic conductivity;
3), utilize CHS00B type Electrochemical Comprehensive Tester to investigate the electrochemical behavior of semiconductor nano in electrolytic solution 1.Choose the electrochemical workstation three-electrode system: working electrode 6 is glassy carbon electrodes, is platinum filament to electrode 3, and contrast electrode 5 is Ag/Ag +Glassy carbon electrodes is polished at abrasive paper for metallograph, and use successively 1.0 μ m, 0.3 μ m, 0.05 μ m aluminium oxide is polished to minute surface with electrode surface, and cleans with redistilled water, dries in the air.Under nitrogen protection, the CdSe semiconductor nano solution of the 0.01M for preparing dripped overlay on clean working electrode 6 surfaces.Repeat to drip and cover 5～10 times,, control semiconductor nano film thickness is in 80 microns～120 micrometer ranges, and it is stand-by to guarantee that the CdSe semiconductor nano forms fine and close smooth film at working electrode surface;
4) get, in addition the CdSe semiconductor nano and be dispersed in the chloroform solvent, the ultraviolet-visible absorption spectroscopy of test CdSe semiconductor nano, as shown in Figure 4.Obvious absorption peak appears in the CdSe semiconductor nano at the 596nm place.According to ultraviolet-visible absorption spectroscopy figure according to the quantum theory equation
Figure BDA0000094719560000091
(E G opticalBe the energy gap of calculating by absorption spectroscopy, c=3*10 8M/s, h=6.63*10 -34Js, λ are wavelength corresponding to first exciton absorption peak of CdSe semiconductor nano in ultraviolet-visible absorption spectroscopy) energy gap of calculating CdSe semiconductor nano to be measured is 2.08eV;
5), debug the scanning voltage scope with reference to the energy gap (2.08eV) of the CdSe semiconductor nano of being measured by absorption spectroscopy.Show that such as Fig. 1 regulating and controlling valve 8 is in the atmosphere of inert gases whole test.Connect the wire that is connected of the input of three electrodes and parameter and signal detection system 16, voltage range and the sweep velocity of preliminary sweep are set by parameter input and signal detection system 16, start three-electrode system, chemical property to the CdSe semiconductor nano scans, and obtains the initial cycles volt-ampere characteristic of CdSe semiconductor nano in testing result output system 17.Then repeatedly the parameters such as scanning voltage scope and sweep velocity are debugged according to the initial volt-ampere characteristic that obtains, until obtain the desirable nanocrystalline cyclic voltammetric family curve of CdSe (obvious oxidation peak, reduction peak namely occurring) in testing result output system 17.Present embodiment is chosen the nanocrystalline scanning voltage of CdSe to be measured through debugging repeatedly and is-0.9V～2.5V, and sweep velocity is set as 0.02V/s.
6), utilize the three-electrode system of electrochemical workstation to scan CdSe is nanocrystalline, obtain the nanocrystalline cyclic voltammetry curve of CdSe to be measured such as Fig. 3 a.In the Electrochemical Scanning process, apply voltage for working electrode 6.The CdSe semiconductor nano that is adsorbed on working electrode 6 surfaces loses the electronics generation oxidation reaction on its valence band, and oxidation reaction starting point position E` occurs on the working electrode 6 this moment OXIt is corresponding HOMO energy level; The starting point position E` of reduction reaction similarly, occurs RedCorresponding lumo energy.Fig. 3 b is the stable CdSe semiconductor nano cyclic voltammetry curve that obtains behind the Multiple-Scan.Among Fig. 3 b, the peak of the interval 14 interior appearance of reduction reaction electromotive force is the reduction peak of CdSe semiconductor nano, and the interval 15 interior appearance of oxidation reaction electromotive force is the oxidation peak of CdSe semiconductor nano.
The take-off potential value of the redoxomorphism of CdSe semiconductor nano is extracted respectively in reduction reaction electromotive force in Fig. 3 b interval 14 and oxidation reaction electromotive force interval 15.E` OXBe 1.7V, E` RedFor-0.28V.The substitution formula calculates LUMO, HOMO value and energy gap E GCV
In the present embodiment with ferricinum ion to (being Fc/Fc +) be intermediate 11.In conjunction with Fig. 2, ferricinum ion is 4.8eV to the energy level value 18 of the vacuum level 10 of correspondence, and ferricinum ion is to respect to contrast electrode current potential 13, i.e. Ag/Ag +Potential value 19 be 0.09V, difference 4.71 between the two, namely ferricinum ion is the X value to respect to poor with respect to the potential value 19 of contrast electrode current potential 13 of the energy level value 18 of vacuum level 10.
E as calculated HOMOFor-6.41eV, E LUMOFor-4.43eV, E GCVBe 1.98eV.To compare by cyclic voltammetry the energy gap value that obtains and the energy gap 2.08eV that calculates by spectroscopic methodology, the accuracy of confirmatory experiment, through contrast, both deviations are 5%.
Relatively deviation is little for gained test result and absorption spectroscopy.A kind of method of cyclic voltammetry semiconductor nano LUMO value and HOMO value of utilizing provided by the invention embodies following advantage: (1) has utilized semiconductor nano film technique in atmosphere of inert gases, make nanocrystallinely to form film at working electrode surface, reduced the experiment materials; (2) the unstable of semiconductor nano avoided in inert gas shielding, can realize that the band structure of multiple semiconductor nano is measured.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have change and change.All any modifications of doing within the spirit and principles in the present invention, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. a method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value is characterized in that, comprises the steps:
1), semiconductor nano is dispersed in the non-polar organic solvent formation semiconductor nano solution;
2), in inert gas, with step 1) described in semiconductor nano solution drip working electrode (6) surface that is overlying on electrochemical workstation, form the semiconductor nano film on described working electrode (6) surface;
3), in inert gas, utilize electrochemical workstation to scan, obtain cyclic voltammetry curve;
4), from step 3) extraction and oxidation peak in the cyclic voltammetry curve that obtains, potential value that the reduction peak value is corresponding, oxidation peak, potential value substitution formula corresponding to reduction peak value with semiconductor nano, calculate LUMO value, HOMO value and the energy gap of semiconductor nano, described formula is:
E HOMO＝-(E′ OX+X)
E LUMO＝-(E′ red+X)
E gCV＝E HOMO-E LUMO＝E′ OX-E′ red
Wherein, E HOMOThe HOMO value of semiconductor nano, E LUMOThe LUMO value of semiconductor nano, E GCVThe bandwidth that obtains by cyclic voltammetry, E` OXInitial oxidation potential energy, E` RedBe initial reduction potential energy, X is constant.
2. a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value according to claim 1, it is characterized in that, the concentration of described semiconductor nano solution is greater than 0, and is less than or equal to 1/10 of electrolytic solution in the electrochemical workstation (1) concentration.
3. a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value according to claim 1 is characterized in that, described semiconductor nano film thickness is 80 microns～120 microns.
4. a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value according to claim 1, it is characterized in that the working electrode of described electrochemical workstation (6) is glassy carbon electrodes, be Ag/Ag to electrode (3) for platinum filament, contrast electrode (5) +
5. according to claim 1 or 4 described a kind of methods of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value, it is characterized in that, the electrolytic cell of described electrochemical workstation (2) is connected with inert gas reservoir vessel (9), variable valve (8), inert gas import is taken over (7) and inert gas discharge connection (4), described working electrode (6), electrode (3) is connected 5 with contrast electrode) separately the top is connected with parameter input and signal detection system (16) respectively by wire, described parameter is inputted and signal detection system (16) is connected with testing result output system (17) by wire.
6. a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value according to claim 1 is characterized in that described non-polar organic solvent is chloroform, toluene or normal hexane.
7. a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value according to claim 1 is characterized in that step 4) described in definite method of X value as follows:
A), get intermediate (11), determine intermediate (11) with respect to the energy level value (18) of vacuum level (10), determine that intermediate (11) is with respect to the potential value (19) of contrast electrode current potential (13);
B), step a) described in difference between energy level value (18) and the potential value (19), be the X value.
8. a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value according to claim 1 and 2 is characterized in that the concentration of telling semiconductor nano solution is 0.01M.
9. a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value according to claim 1 is characterized in that, electrolytic solution in the described electrochemical workstation (1) is formed by tetrabutyl hexafluorophosphoric acid amine and acetonitrile configuration.
10. a kind of method of utilizing cyclic voltammetry semiconductor nano LUMO value and HOMO value according to claim 7 is characterized in that, described intermediate (11) is ferricinum ion pair.
CN2011103038384A 2011-09-29 2011-09-29 Method for determining LUMO value and HOMO value of semiconductor nano-crystals through utilizing cyclic voltammetry Pending CN102928480A (en)

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