CN102921666A - Method for eliminating residual solution during etching for capacitive touch screen - Google Patents
Method for eliminating residual solution during etching for capacitive touch screen Download PDFInfo
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- CN102921666A CN102921666A CN2012104740097A CN201210474009A CN102921666A CN 102921666 A CN102921666 A CN 102921666A CN 2012104740097 A CN2012104740097 A CN 2012104740097A CN 201210474009 A CN201210474009 A CN 201210474009A CN 102921666 A CN102921666 A CN 102921666A
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- touch screen
- cleaning fluid
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- capacitive touch
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Abstract
The invention relates to a method for eliminating residual solution during etching for a capacitive touch screen, which is characterized by comprising the following steps of: firstly, putting the etched touch screen on a support, and putting the support in an immersing box filled with cleaning fluid with 90 seconds, wherein the liquid level of the cleaning fluid in the immersing box is higher than an effective work region of the touch screen; and secondly, immersing the touch screen in the immersing box for 25-35 minutes, and then taking the touch screen out for performing next process. The cleaning liquid is prepared by weight: 0.8-1% of HCL (hydrogen chloride), 0.05-0.07% of HNO3 and the balance of deionized water. According to the invention, the residual solution in the etching process can be eliminated to ensure the product quality and guarantee the normal operation of the follow-up process.
Description
Technical field
The present invention relates to a kind of manufacture method of capacitive touch screen, the method for the elimination residual solution of using in the manufacturing process of especially a kind of capacitive touch screen sensor, specifically a kind of method of eliminating capacitive touch screen etch residue solution.
Background technology
At present, the capacitance technology touch-screen is to utilize the electric current induction of human body to carry out work.Capacitive touch screen is a compound glass screen, and the surface of glass screen scribbles ITO, and outermost layer is skim silicon soil glassivation, and interlayer ITO coating is as working face, and extraction electrode on the working face, edge have overcoat to guarantee good working environment.When finger touch was on metal level, because people's bulk electric field, user and touch screen surface formed with a coupling capacitance, and for high frequency electric, electric capacity is direct conductor, so finger siphons away a very little electric current from contact point.This electric current divides the electrode on from touch-screen four jiaos and flows out, and the electric current of these four electrodes of flowing through is directly proportional with the distance of finger to four jiaos, and controller draws the position of touch point by the accurate Calculation to these four current ratios.
In capacitive touch screen, M bar X-axis that transverse and longitudinal interlocks and the ITO Sensor of N bar Y-axis are arranged on the general ITO Sensor that refers to, touch-screen, be used for (X, Y) coordinate of finger sensing touch location.The quantity basis touch-screen of M and N size and different is shielded greatlyr, and the ITO Sensor number of axle of needs is more.
In the manufacturing process of capacitive touch screen sensor, carry out the gold-tinted processing procedure for ito glass, be used for making and stay on the ito glass and can conduct electricity, satisfactory ITO film, use etching method that it is etched away unwanted ITO film, in this production process, have the place that the partial impurities of etching solution and solution remain in the boundary of glass after the etching and ITO film, at the step between ITO film and glass, therefore this kind is residual is retained, demoulding technique after etching, strong base solution and residual etching impurity react, and form " residue ", and in rear road production process, can not eliminate, have a strong impact on qualification rate.And in a single day this kind situation produces, and owing to following reason, this kind situation is difficult to be found in the subsequent handling of producing:
1. residue is very small, and has corresponding anti-etching material to cover the top of the ITO figure that needs, impact observation herein.
2. observe whether residual need to carrying out at black box is arranged, owing to be the wet method operation, glass surface has the water mark, has affected the light reflection that black box checks, is difficult to find residual.
If can not eliminate residually this moment, then can not dispose in subsequent production, can only special disposal, but the damage of processing the qualification rate of bringing is very large, and time-consuming taking a lot of work.
Summary of the invention
The objective of the invention is to have a strong impact on for the place that the partial impurities that has etching solution in the existing capacitive touch screen manufacturing process and solution remain in the boundary of glass after the etching and ITO film the problem of product quality, invent a kind of method of eliminating capacitive touch screen etch residue solution.
Technical scheme of the present invention is:
A kind of method of eliminating capacitive touch screen etch residue solution is characterized in that it may further comprise the steps:
At first, will be placed on the support through the touch-screen of over etching, and in 90 seconds support is put into the soaking box that cleaning fluid is housed, the liquid level of the cleaning fluid in the soaking box should exceed effective working region of touch-screen;
Secondly, touch-screen soaks to take out after 25～35 minutes in soaking box and enters immediately next process;
Described cleaning fluid by percentage by weight be: 0.8～1% HCl, 0.05%～0.07% HNO
3Formulated with the deionized water of surplus.
Described cleaning fluid must be changed once in per 24 hours.
Beneficial effect of the present invention:
The present invention can eliminate the residual solution in the etching process, guarantees product quality, guarantees normally carrying out of subsequent handling.
The inventive method is simple, easily goes, and production efficiency is high, has improved the qualification rate of product.
Description of drawings
Fig. 1 is the structural representation of touch-screen plug-in mounting support of the present invention.
Fig. 2 is the structural representation of soaking box of the present invention.
The specific embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
Shown in Fig. 1-2.
A kind of method of eliminating capacitive touch screen etch residue solution, it may further comprise the steps:
At first, will be placed on the support shown in Figure 1 through the touch-screen of over etching, and in 90 seconds support be put into the soaking box that cleaning fluid is housed shown in Figure 2, the liquid level of the cleaning fluid in the soaking box should exceed effective working region of touch-screen;
Secondly, touch-screen soaks to take out after 25～35 minutes in soaking box and enters immediately next process;
Described cleaning fluid by percentage by weight be: 0.8～1% HCl, 0.05%～0.07% HNO
3Formulated with the deionized water of surplus.
Support and solution do not react.During production with the batch production ito glass substrate, be placed in the support, notice that solution is to the resistance of glass substrate, prevent fragment, after bulk article finishes, carry out next process, this moment, solution of the present invention can react etching solution is residual, elimination is at the remained on surface of product, thus solution etching solution residue problem.
Support of the present invention and soaking box and cleaning fluid must satisfy following requirement:
1. stent size must satisfy the dimensional requirement of ito glass substrate, so should be made according to corresponding size.
2. chemical reaction can not occur in support, soaking box and cleaning fluid, not so can affect solution quality, so support, soaking box should select stainless steel to make.
3. support and soaking box will be separated, and support is wanted jug, make things convenient for like this next procedure.
4. cleaning fluid will be changed by workload, determines solution concentration with residual degree, and change once general every day.
5. to guarantee that the time of touch-screen in cleaning fluid is unlikely long, cross the variation that long immersion can cause anti-etching material, cause defective to occur, therefore should strictly control soak time, in time take out.
After exposure, developing; stay one deck resistant layer on the ito glass surface; can prevent that etching solution from carrying out etching to the ITO film under it; and do not have the ITO meeting of resistant layer protection etched; just stayed the electroconductive ITO film that needs at glass surface like this; and then carry out subsequent handling, to reach the acceptable Standard resistance range.In etching work procedure, have impurity and be deposited in glass exposed after the etching and etching ITO film place not, this kind impurity is take ferro element as main, warp is road demoulding operation later, and impurity will react with highly basic, will cause waste product as not processing, and the ratio that produces is very high, reaches more than 80%.
Therefore, method of the present invention is placed on etching program after, will normally produce behind the etching work procedure product by stentplacement in cleaning solution, cleaning solution can be eliminated residual impurity, thereby eliminates the etch residue defective, and on not impact of production efficiency.
The part that the present invention does not relate to all prior art that maybe can adopt same as the prior art is realized.
Claims (2)
1. method of eliminating capacitive touch screen etch residue solution is characterized in that it may further comprise the steps:
At first, will be placed on the support through the touch-screen of over etching, and in 90 seconds support is put into the soaking box that cleaning fluid is housed, the liquid level of the cleaning fluid in the soaking box should exceed effective working region of touch-screen;
Secondly, touch-screen soaks to take out after 25～35 minutes in soaking box and enters immediately next process;
Described cleaning fluid by percentage by weight be: 0.8～1% HCl, 0.05%～0.07% HNO
3Formulated with the deionized water of surplus.
2. the method for elimination capacitive touch screen etch residue solution according to claim 1 is characterized in that the replacing in necessary per 24 hours of described cleaning fluid once.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210474009.7A CN102921666B (en) | 2012-11-21 | 2012-11-21 | Method for eliminating residual solution during etching for capacitive touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210474009.7A CN102921666B (en) | 2012-11-21 | 2012-11-21 | Method for eliminating residual solution during etching for capacitive touch screen |
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| Publication Number | Publication Date |
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| CN102921666A true CN102921666A (en) | 2013-02-13 |
| CN102921666B CN102921666B (en) | 2014-12-17 |
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| CN201210474009.7A Expired - Fee Related CN102921666B (en) | 2012-11-21 | 2012-11-21 | Method for eliminating residual solution during etching for capacitive touch screen |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2956217A (en) * | 1958-11-20 | 1960-10-11 | Rca Corp | Semiconductor devices and methods of making them |
| US2993817A (en) * | 1956-02-23 | 1961-07-25 | Carasso John Isaac | Methods for the production of semiconductor junction devices |
| US3046176A (en) * | 1958-07-25 | 1962-07-24 | Rca Corp | Fabricating semiconductor devices |
| JPS58100433A (en) * | 1981-12-10 | 1983-06-15 | Fujitsu Ltd | Cleaning of wafer |
| US20030000548A1 (en) * | 2001-03-05 | 2003-01-02 | Toshihito Tsuga | Method and device for removing particles on semiconductor wafers |
| CN1847382A (en) * | 2005-04-13 | 2006-10-18 | 美格纳半导体有限会社 | Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same |
| CN102691093A (en) * | 2012-06-20 | 2012-09-26 | 哈尔滨工业大学 | Method for rapidly corroding and patterning indium tin oxide surface by using electrochemical technology |
-
2012
- 2012-11-21 CN CN201210474009.7A patent/CN102921666B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2993817A (en) * | 1956-02-23 | 1961-07-25 | Carasso John Isaac | Methods for the production of semiconductor junction devices |
| US3046176A (en) * | 1958-07-25 | 1962-07-24 | Rca Corp | Fabricating semiconductor devices |
| US2956217A (en) * | 1958-11-20 | 1960-10-11 | Rca Corp | Semiconductor devices and methods of making them |
| JPS58100433A (en) * | 1981-12-10 | 1983-06-15 | Fujitsu Ltd | Cleaning of wafer |
| US20030000548A1 (en) * | 2001-03-05 | 2003-01-02 | Toshihito Tsuga | Method and device for removing particles on semiconductor wafers |
| CN1847382A (en) * | 2005-04-13 | 2006-10-18 | 美格纳半导体有限会社 | Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same |
| CN102691093A (en) * | 2012-06-20 | 2012-09-26 | 哈尔滨工业大学 | Method for rapidly corroding and patterning indium tin oxide surface by using electrochemical technology |
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| CN102921666B (en) | 2014-12-17 |
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Effective date of registration: 20130731 Address after: 210002 Zhongshan East Road, Jiangsu, China, No. 301, No. Applicant after: Nanjing Xiongmao Electronics Co., Ltd. Address before: 210061 commercial building, room 413, hi tech Development Zone, Jiangsu, Nanjing Applicant before: Nanjing Huaxian High-Tech Co., Ltd. |
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